JPH0468801A - High-frequency transmitting window body structure and manufacture of the same - Google Patents
High-frequency transmitting window body structure and manufacture of the sameInfo
- Publication number
- JPH0468801A JPH0468801A JP2177319A JP17731990A JPH0468801A JP H0468801 A JPH0468801 A JP H0468801A JP 2177319 A JP2177319 A JP 2177319A JP 17731990 A JP17731990 A JP 17731990A JP H0468801 A JPH0468801 A JP H0468801A
- Authority
- JP
- Japan
- Prior art keywords
- transmitting window
- transmission window
- titanium nitride
- waveguide
- solid solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000006104 solid solution Substances 0.000 claims abstract description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 7
- 229910052786 argon Inorganic materials 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 230000005540 biological transmission Effects 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 9
- 238000002844 melting Methods 0.000 abstract description 4
- 230000008018 melting Effects 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 241000220317 Rosa Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Landscapes
- Microwave Tubes (AREA)
- Waveguide Connection Structure (AREA)
- Non-Reversible Transmitting Devices (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、高周波透過窓構体及びその製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a high frequency transmission window structure and a manufacturing method thereof.
（従来の技術）
一般にクライストロンや進行波管、あるいはジャイロト
ロンのようなマイクロ波管の出力部には、多くの場合、
矩形又は円形の導波管を横切って誘電体セラミックス板
からなる透過窓が気密に接合された高周波透過窓構体が
一体的に用いられる。(Prior art) In general, the output section of microwave tubes such as klystrons, traveling wave tubes, or gyrotrons often has
A high frequency transmission window structure is integrally used, in which a transmission window made of a dielectric ceramic plate is hermetically joined across a rectangular or circular waveguide.
特に、大電力を増幅するクライストロンは、大形加速器
の高周波電力源や核融合炉のプラズマ加熱用高周波源と
して用いられているが、その透過窓として真空気密が容
易で誘電体損失が小さいアルミナのセラミックスが主に
使用されている。しかし、大電力の高周波をアルミナ透
過窓に透過させると、アルミナの局部的な温度上昇によ
り、しばしばアルミナにクラックや溶融によるピンホー
ルが発生する場合がある。アルミナの温度上昇は、マル
チパクタ放電、主ビームからのホッピング電子、吸着ガ
ス、電子の帯電などで生じるものと考えられている。そ
こで、アルミナの温度上昇を防止するために、アルミナ
表面に窒化チタンを塗布することが一般的に行なわれて
いる。In particular, klystrons, which amplify large amounts of power, are used as high-frequency power sources for large accelerators and high-frequency sources for plasma heating in nuclear fusion reactors.Alumina, which is easily vacuum-tight and has low dielectric loss, is used as the transmission window for the klystron. Ceramics are mainly used. However, when high-power high-frequency waves are transmitted through the alumina transmission window, a local temperature rise in the alumina often causes pinholes to occur in the alumina due to cracks and melting. The temperature rise in alumina is thought to be caused by multipactor discharge, hopping electrons from the main beam, adsorbed gas, and electron charging. Therefore, in order to prevent the temperature of alumina from rising, titanium nitride is generally applied to the surface of the alumina.
即ち、第２図は従来の高周波透過窓構体を示したもので
、円形導波管部１の内側にアルミナセラミックス板から
なる透過窓２が設けられ、この透過窓２の表面に窒化チ
タン膜３が付着されている。That is, FIG. 2 shows a conventional high frequency transmission window structure, in which a transmission window 2 made of an alumina ceramic plate is provided inside a circular waveguide section 1, and a titanium nitride film 3 is coated on the surface of this transmission window 2. is attached.
図中の符号４はフランジ部、５は矩形導波管部、６は透
過窓２を冷却するための通水管である。又、この第２図
において、透過窓２の左側がクライストロンの真空側を
示し、右側が真空もしくは絶縁ガスが封入されている外
部導波管側である。このような高周波透過窓構体では、
動作時に透過窓２はクライストロンの電子銃からの散乱
電子や散乱電子の衝突により透過窓２で生成される２次
電子の繰返し衝突で発熱する。この発熱で透過窓２が破
壊するのを防ぐため、透過窓２の表面に窒化チタン膜３
を形成し、且つ透過窓構体全体を水冷している。In the figure, reference numeral 4 is a flange portion, 5 is a rectangular waveguide portion, and 6 is a water pipe for cooling the transmission window 2. Further, in FIG. 2, the left side of the transmission window 2 shows the vacuum side of the klystron, and the right side shows the external waveguide side filled with vacuum or insulating gas. In such a high frequency transmission window structure,
During operation, the transmission window 2 generates heat due to repeated collisions of secondary electrons generated in the transmission window 2 by scattered electrons from the klystron electron gun and collisions of scattered electrons. In order to prevent the transmission window 2 from being destroyed by this heat generation, a titanium nitride film 3 is placed on the surface of the transmission window 2.
The entire transparent window structure is water-cooled.
（発明が解決しようとする課１ｉ）
上記のように従来の高周波透過窓構体においては、透過
窓２の表面に窒化チタン膜３を形成し、透過窓２からの
２次電子の放出を防止している。(Issue 1i to be solved by the invention) As described above, in the conventional high frequency transmission window structure, the titanium nitride film 3 is formed on the surface of the transmission window 2 to prevent the emission of secondary electrons from the transmission window 2. ing.
しかし、チタンはよく知られているようにゲッタとして
作用するので、透過窓２の表面に窒化チタン膜３を形成
した後に、大気に露出した場合・、酸素を吸収もしくは
内部拡散により膜中に取り込んでしまう。そして、酸化
物は一般的に金属単体に比べ２次電子放出係数が大きい
ので、窒化チタン膜３の本来の２次電子放出抑制効果が
低減する。However, as it is well known, titanium acts as a getter, so if the titanium nitride film 3 is formed on the surface of the transmission window 2 and then exposed to the atmosphere, oxygen will be absorbed into the film by absorption or internal diffusion. It's gone. Since oxides generally have a larger secondary electron emission coefficient than metals alone, the original secondary electron emission suppressing effect of the titanium nitride film 3 is reduced.
この発明は、透過窓の温度上昇による破壊を未然に防止
した高周波透過窓構体及びその製造方法を提供すること
を目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a high frequency transmission window structure and a method for manufacturing the same, which prevents the transmission window from being destroyed due to temperature rise.
［発明の構成］
（課題を解決するための手段）
この発明は、透過窓の表面に窒化チタンと酸化チタンと
の固溶体膜が形成されてなる高周波透過窓構体である。[Structure of the Invention] (Means for Solving the Problems) The present invention is a high frequency transmission window structure in which a solid solution film of titanium nitride and titanium oxide is formed on the surface of the transmission window.
又、他の発明は、透過窓の表面に窒化チタンと酸化チタ
ンとの固溶体膜を、Ａｒ％Ｎ、Ｏ２の放電ガス中でスパ
ッタリングにより形成する高周波透過窓構体の製造方法
である。Another invention is a method for manufacturing a high frequency transmission window structure, in which a solid solution film of titanium nitride and titanium oxide is formed on the surface of the transmission window by sputtering in a discharge gas of Ar%N and O2.
（作 用）
この発明によれば、透過窓の表面に窒化チタンより高抵
抗の同溶体膜が形成されているので、２次電子放出係数
が小さく、マルチパクタ放電が抑制され、誘電体損失に
よる透過窓上での発熱を低減することが出来る。その結
果、透過窓のクラックや濱融を防ぐことが出来る。(Function) According to the present invention, since a solution film having higher resistance than titanium nitride is formed on the surface of the transmission window, the secondary electron emission coefficient is small, multipactor discharge is suppressed, and transmission due to dielectric loss is reduced. Heat generation above the window can be reduced. As a result, cracks and melting of the transmission window can be prevented.
（実施例）
以下、図面を参照して、この発明の一実施例を詳細に説
明する。(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.
この発明における高周波透過窓構体は第１図に示すよう
に構成され、円形導波管部１１の内側にはアルミナのよ
うな誘電体セラミックス板からなる一過窓１２が設けら
れ、この透過窓１２の表面には窒化チタンと酸化チタン
との固溶体膜１３が６０乃至１２０人の厚さに形成され
ている。尚、図中の符号１４は円形フランジ、１５は矩
形導波管部、１６は透過窓１２を冷却するための通水管
であり、透過窓１２の左側がクライストロンの真空側を
示し、右側が真空もしくは絶縁ガスが封入されている外
部導波管側である。The high frequency transmission window structure according to the present invention is constructed as shown in FIG. A solid solution film 13 of titanium nitride and titanium oxide is formed on the surface to a thickness of 60 to 120 mm. In the figure, reference numeral 14 is a circular flange, 15 is a rectangular waveguide section, and 16 is a water pipe for cooling the transmission window 12. The left side of the transmission window 12 indicates the vacuum side of the klystron, and the right side indicates the vacuum side. Alternatively, it is the external waveguide side filled with insulating gas.
透過窓１２の表面に窒化チタンと酸化チタンとの固溶体
膜１３を形成するに当たっては、アルゴン（Ａｒ）、窒
素（Ｎ）、酸素（０□）の混合放電ガス中でスパッタリ
ングにより６０乃至１２０人の厚さに形成する。この時
、酸素分圧が全圧の０．１乃至１．０％の範囲に設定さ
れている。この場合、固溶体膜１３は導電体の窒化チタ
ンと絶縁体の酸化チタンの組成を連続的に変えることが
出来るので、膜厚と組成比で決定される抵抗値を任意に
選べる。又、既述のように、スパッタリングにより固溶
体膜１３を形成するが、アルゴン、窒素、酸素の分圧を
制御して窒化チタンと酸化チタンの組成比を変え、スパ
ッタリング時間で膜厚を変え、所望の固溶体膜１３を得
ている。In forming the solid solution film 13 of titanium nitride and titanium oxide on the surface of the transmission window 12, 60 to 120 people were Form into a thick layer. At this time, the oxygen partial pressure is set in the range of 0.1 to 1.0% of the total pressure. In this case, since the solid solution film 13 can continuously change the composition of titanium nitride as a conductor and titanium oxide as an insulator, the resistance value determined by the film thickness and composition ratio can be arbitrarily selected. Further, as described above, the solid solution film 13 is formed by sputtering, and the composition ratio of titanium nitride and titanium oxide is changed by controlling the partial pressures of argon, nitrogen, and oxygen, and the film thickness is changed by changing the sputtering time to obtain the desired thickness. A solid solution film 13 is obtained.
次に、各種条件における従来及びこの発明における透過
窓の温度上昇測定結果について説明する。Next, the results of measuring the temperature rise of the transmission window in the conventional and the present invention under various conditions will be explained.
尚、測定に当たっては、透過窓を導波管部の途中に設け
、導波管部内を高真空にした後、パルスのマイクロ波を
導波管部内に導き、透過窓に透過させる。そして、パル
ス電力に対する透過窓の温度上昇は、冷却水の通水管に
熱電対を圧着して測定・する。In the measurement, a transmission window is provided in the middle of the waveguide section, and after creating a high vacuum inside the waveguide section, pulsed microwaves are guided into the waveguide section and transmitted through the transmission window. The temperature rise of the transmission window in response to pulsed power is measured by crimping a thermocouple to the cooling water pipe.
先ず第３図は、従来の透過窓２に窒化チタン膜３を、Ｏ
人の厚さ形成した場合の温度上昇を示している。この図
から明らかなように、パルス電力が１５ＭＷ付近で６℃
と急激な温度上昇があった。First, in FIG. 3, a titanium nitride film 3 is placed on a conventional transmission window 2,
It shows the rise in temperature when the thickness of the person is formed. As is clear from this figure, when the pulse power is around 15 MW, it is 6°C.
There was a sudden rise in temperature.
又、第４図は、透過窓２に窒化チタン１１３を６０人の
厚さ形成した場合の温度上昇を示している。この図から
明らかなように、パルス電力が１５ＭＷ付近での急激な
温度上昇はないが、パルス電力が５０ＭＷ以上での温度
の上昇が、窒化チタン１！Ｉ３を、Ｏ人の厚さ形成した
場合に比べて大きく、パルス電力が２００ＭＷ付近で９
℃上昇した。これは、窒化チタン膜３の抵抗損失による
ものと理解される。窒化チタン膜３はいずれもアルゴン
（Ａｒ）分圧１．３Ｘ、Ｏ−２Ｔｏ ｒ ｒ、窒素分圧
５．２Ｘ、Ｏ−”Ｔｏｒｒとし全圧６．５×１Ｏ−２Ｔ
ｏｒｒでスパッタリングにより塗布し、膜厚はスパッタ
時間を制御して作成したものである。Further, FIG. 4 shows the temperature rise when titanium nitride 113 is formed in the transmission window 2 to a thickness of 60 mm. As is clear from this figure, there is no rapid temperature rise when the pulse power is around 15 MW, but the temperature rises when the pulse power is 50 MW or more. It is larger than when I3 is formed to a thickness of O people, and when the pulse power is around 200 MW, it becomes 9
℃ rose. This is understood to be due to the resistance loss of the titanium nitride film 3. The titanium nitride film 3 has argon (Ar) partial pressure of 1.3X, O-2Torr, nitrogen partial pressure of 5.2X, O-''Torr, and total pressure of 6.5×1O-2T.
The film was coated by sputtering using a sputtering method, and the film thickness was determined by controlling the sputtering time.
それに対して、第５図はこの発明の実施例によるもので
、全圧６．５Ｘ、Ｏ−２Ｔｏｒｒ、アルゴン（Ａ「）分
圧１．３Ｘ、Ｏ−２Ｔｏｒｒ、窒素分圧５． １９ｘ
、Ｏ−”Ｔｏ ｒ ｒ、酸素分圧６．５×、Ｏ−’Ｔｏ
ｒｒのスパッタリング条件で作成した窒化チタンと酸化
チタンとの固溶体膜１３を、透過窓１２の表面に６０人
の厚さ形成した場合の温度上昇を示している。この図か
ら明らかなように、パルス電力が１５ＭＷ付近での急激
な温度上昇もなく、又、パルス電力が２１２ＭＷで温度
上昇２．７℃と上記従来の窒化チタン膜３を形成した場
合に比べて低い。On the other hand, FIG. 5 is according to an embodiment of the present invention, where the total pressure is 6.5X, O-2Torr, argon (A') partial pressure is 1.3X, O-2Torr, and nitrogen partial pressure is 5.19X.
, O-'To r r, oxygen partial pressure 6.5×, O-'To
This figure shows the temperature rise when a solid solution film 13 of titanium nitride and titanium oxide, which was created under sputtering conditions of rr, is formed to a thickness of 60 mm on the surface of the transmission window 12. As is clear from this figure, there is no rapid temperature rise when the pulse power is around 15 MW, and the temperature rise is 2.7°C when the pulse power is 212 MW, compared to the case where the conventional titanium nitride film 3 is formed. low.
又、第６図は、スパッタリング条件がアルゴン（Ａｒ）
分圧１．３Ｘ、Ｏ−２Ｔｏｒｒ、窒素分圧５．１６Ｘ、
Ｏ−２Ｔｏｒｒ、酸素分圧３．２５Ｘ、Ｏ−’Ｔｏｒｒ
、全圧６．５Ｘ、Ｏ−’Ｔｏｒｒで作成した窒化チタン
と酸化チタンとの固溶体膜１３を、透過窓１２の表面に
６０人の厚さ形成した場合の温度上昇を示している。窒
化チタン膜３を形成した場合に比べて、温度上昇が小さ
く、パルス電力が２１２ＭＷで温度上昇は２．２℃であ
った。In addition, FIG. 6 shows that the sputtering conditions are argon (Ar).
Partial pressure 1.3X, O-2Torr, nitrogen partial pressure 5.16X,
O-2Torr, oxygen partial pressure 3.25X, O-'Torr
, the temperature rise is shown when a solid solution film 13 of titanium nitride and titanium oxide prepared at a total pressure of 6.5X and O-'Torr is formed to a thickness of 60 mm on the surface of the transmission window 12. Compared to the case where the titanium nitride film 3 was formed, the temperature rise was smaller, and the temperature rise was 2.2° C. when the pulse power was 212 MW.
最後の第７図は、上記の全圧６．５Ｘ、Ｏ−２Ｔｏｒｒ
に対し酸素分圧が０．５％のスバッ９１Ｊング条件で作
成した窒化チタンと酸化チタンとの固溶体膜１３を、透
過窓１２の表面に１２０人の厚さ形成した場合の温度上
昇を示している。低パルス電力での急激な温度上昇もな
く、又、パルス電力が２０７ＭＷで温度上昇は２．６℃
である。The last figure 7 shows the above total pressure 6.5X, O-2 Torr.
The figure shows the temperature rise when a solid solution film 13 of titanium nitride and titanium oxide, which was prepared under Subac91J conditions with an oxygen partial pressure of 0.5%, is formed on the surface of the transmission window 12 to a thickness of 120 mm. There is. There is no sudden temperature rise with low pulse power, and the temperature rise is 2.6℃ with pulse power of 207MW.
It is.
このように、窒化チタンをベースに酸化チタンを同時に
塗布すれば、高パルス電力での抵抗損失を小さく出来る
ばかりでなく、マルチパクタ放電による温度上昇と考え
られている低パルス電力での急激な温度上昇も低減する
ことが出来る。In this way, by applying titanium oxide based on titanium nitride at the same time, it is possible to not only reduce the resistance loss at high pulse power, but also to reduce the sudden temperature rise at low pulse power, which is thought to be caused by multipactor discharge. can also be reduced.
［発明の効果］
以上説明したようにこの発明によれば、透過窓の表面に
、窒化チタンと酸化チタンとの固溶体膜を、Ａ ｒ ％
Ｎ ｓ ０２の放電ガス中でスパッタリングにより付
着させることにより、窒化チタンよりも高抵抗の膜を形
成することが出来る。従って、２次電子放出係数が小さ
く、マルチパクタ放電が抑制され、且つ誘電体損失によ
る透過窓上での発熱を低減することが出来る。その結果
、透過窓のクラックや溶融を防ぐことが出来る。[Effects of the Invention] As explained above, according to the present invention, a solid solution film of titanium nitride and titanium oxide is formed on the surface of the transmission window at an A r %
By depositing by sputtering in a discharge gas of N s 02, a film with higher resistance than titanium nitride can be formed. Therefore, the secondary electron emission coefficient is small, multipactor discharge is suppressed, and heat generation on the transmission window due to dielectric loss can be reduced. As a result, it is possible to prevent the transmission window from cracking or melting.
第１図はこの発明の一実施例に係る高周波透過窓構体を
示す縦断面図、第２図は従来の高周波透過窓構体を示す
縦断面図、−３図乃至第７図は各種条件における透過窓
の温度上昇とパルス電力との関係を示す特性曲線図であ
る。
１１・・・導波管、１２・・・透過窓、１３・・・固溶
体膜。
出願人代理人 弁理士 鈴江武彦FIG. 1 is a vertical cross-sectional view showing a high-frequency transmitting window structure according to an embodiment of the present invention, FIG. 2 is a vertical cross-sectional view showing a conventional high-frequency transmitting window structure, and FIGS. -3 to 7 are transmittance under various conditions. FIG. 3 is a characteristic curve diagram showing the relationship between window temperature rise and pulse power. 11... Waveguide, 12... Transmission window, 13... Solid solution membrane. Applicant's agent Patent attorney Takehiko Suzue
Claims (2)
が設けられてなる高周波透過窓構体において、 上記透過窓の表面に窒化チタンと酸化チタンとの固溶体
膜が形成されてなることを特徴とする高周波透過窓構体
。(1) A high frequency transmission window structure including a transmission window made of a dielectric ceramic plate provided in a waveguide, characterized in that a solid solution film of titanium nitride and titanium oxide is formed on the surface of the transmission window. High frequency transparent window structure.
なる透過窓の表面に、窒化チタンと酸化チタンとの固溶
体膜を、Ａｒ、Ｎ、Ｏ＿２の放電ガス中でスパッタリン
グにより形成することを特徴とする高周波透過窓構体の
製造方法。(2) A solid solution film of titanium nitride and titanium oxide is formed on the surface of a transmission window made of a dielectric ceramic plate provided in the waveguide by sputtering in a discharge gas of Ar, N, and O_2. A method for manufacturing a high frequency transmitting window structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2177319A JP3028834B2 (en) | 1990-07-06 | 1990-07-06 | High frequency transmission window structure and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2177319A JP3028834B2 (en) | 1990-07-06 | 1990-07-06 | High frequency transmission window structure and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0468801A true JPH0468801A (en) | 1992-03-04 |
| JP3028834B2 JP3028834B2 (en) | 2000-04-04 |
Family
ID=16028906
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2177319A Expired - Lifetime JP3028834B2 (en) | 1990-07-06 | 1990-07-06 | High frequency transmission window structure and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3028834B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006143325A (en) * | 2004-07-05 | 2006-06-08 | Ishida Co Ltd | Bag making and packaging system |
| CN102859633A (en) * | 2010-05-18 | 2013-01-02 | E2V技术（英国）有限公司 | Electron tube |
| JP2017183467A (en) * | 2016-03-30 | 2017-10-05 | 住友大阪セメント株式会社 | Electrostatic chuck device, and manufacturing method of electrostatic chuck device |
-
1990
- 1990-07-06 JP JP2177319A patent/JP3028834B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006143325A (en) * | 2004-07-05 | 2006-06-08 | Ishida Co Ltd | Bag making and packaging system |
| CN102859633A (en) * | 2010-05-18 | 2013-01-02 | E2V技术（英国）有限公司 | Electron tube |
| JP2017183467A (en) * | 2016-03-30 | 2017-10-05 | 住友大阪セメント株式会社 | Electrostatic chuck device, and manufacturing method of electrostatic chuck device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3028834B2 (en) | 2000-04-04 |
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