JPH0465397A - Method and device for forming thin film - Google Patents

Abstract

PURPOSE:To stably form the thin film or multilayer thin film conforming to the stoichiometric ration at low temp. by carrying out composite assist by the simultaneous irradiation with light and ion in addition to the energy of the main depositing mechanism for the constituent elements of a thin film. CONSTITUTION:Independent forming tanks 1, 2 and 3 are provided, a heating holder 4 for a substrate 22 is moved, and the materials of different kinds are continuously vapor-deposited to form a laminated film. Binary ion beam sputtering by ion sources 5 and 6 is used in the tank 1, a light/ion composite assist mechanism by assist light sources 7 and 8 is furnished, and a high-quality thin film is formed below 100 deg.C. A metallic or ceramic sintered body, etc., are used for targets 9 and 10, the ion beam current is controlled, and the composition and structure of the coating film are controlled by shuttering. An excimer laser 11 is used as the light source of the tank 2, and a composite assist mechanism by the light source 12 and ion source 13 is provided. A target 14 is used in the same way as in the tank 1. An MBE method is used for the energy of the tank 3, and a quaternary vapor-deposition source such as Knudsen cells 15-18 is used. A composite assist mechanism by the light source 19 and ion source 20 is provided, and a mechanism 21 for controlling a substrate before deposition and the surface layer structure of the coating film after deposition is furnished.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for forming thin films such as oxide superconductors and ferroelectrics, and a thin film forming apparatus.

Conventional technology Thin film technology (Y) These thin films (Y) have developed mainly in the electronics field, especially in the semiconductor manufacturing process, and have progressed with the development of new materials. In many cases, the properties of these new materials change significantly depending on the formation method, but the creation of these new materials and their deviceization is largely due to improvements in 4Q thin film technology, as typified by artificial lattice materials. There are oxide superconductors and ferroelectric materials.Oxide superconducting materials represented by the B1-3r-Ca-Cu-0 system (although the details of the superconducting mechanism are not clear) have a force transition temperature higher than the liquid nitrogen temperature. It is expected that it will be applied to various electronics fields such as quantum interference devices.
-xLax)(ZryTi+ -v)+-x-40
Oxide ferroelectric materials, represented by the s-based ferroelectric materials, exhibit excellent piezoelectric, pyroelectric, and electro-optical properties, and various functional devices using them are being investigated. Particularly in the field of semiconductor ICs, there are high expectations for its application to new memory devices.

In order to improve the properties of these materials or integrate them (Table 1), it is very important to reduce the thickness of these materials, and it is especially important to develop technology to fabricate them on semiconductor substrates such as Si. In this case, single-crystal thin films or oriented films are desirable, and the development of heteroepitaxial technology is important.Furthermore, it is possible to control the structure like an artificial lattice or at the atomic layer level, or to layer different materials. Functional thin film formation technology is also in high demand from the perspective of material design.Research on these (L)
It is basically controlled by the substrate material, chemical composition, and formation temperature. In general, crystalline films can be obtained at low temperatures by reducing lattice mismatch with the substrate, using a highly active deposition method, and matching the chemical composition. However, it is generally not easy to obtain a thin film with desired characteristics by controlling the composition, crystal structure, etc., and the problem that the invention aims to solve is that conventional thin film forming methods and thin film forming apparatuses do not use sputtering. A difference in chemical composition is likely to occur between the oxide sintered body, which is the target material, and the formed thin film, and it is greatly influenced by the sputtering conditions.

High activity t, X, l2 because it is a non-thermal equilibrium process
The formation temperature is considerably lower α. To obtain a film with good crystallinity, a high substrate temperature of around 600°C is required, which causes pinholes due to interdiffusion with the substrate and columnar growth. In addition, since it is an oxide, an oxidizing atmosphere is required.Although the composition, crystallization temperature, and strength are significantly affected by the selection of the conditions, composition control is necessary to obtain a dense and highly crystalline film. They need to be formed at lower temperatures using more efficient and more active deposition methods.

Also, when considering the application of these materials to devices, 8
There is a problem in the deposition process on a semiconductor substrate such as a substrate, and the problem is that surface modification or buffer film formation must be performed as a pretreatment for the deposition process.The present invention solves the above problems. The aim is to provide thin films that match stoichiometry at low temperatures.

Means for Solving the Problems The present invention is aimed at achieving the above object. In a method for forming a compound thin film, in addition to the energy of the main deposition mechanism of the constituent elements of the compound thin film, combined assistance is performed by simultaneous irradiation with light and ions. Depends on configuration.

Effect of the present invention With the above configuration, a thin film can be formed stably and controlled at a low temperature by using composite assist of light and ions.

Embodiment An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a schematic diagram of a forming apparatus for carrying out a thin film forming method. That is, it has three independent forming tanks 1, 2, and 3, and has a mechanism that can continuously form different materials to form a laminated film by moving the substrate heating holder 4.

As the energy for the main deposition mechanism of the forming tank 1, a binary ion beam sputtering method using ion sources 5 and 6 is used, and assist light source 7 and assist ion source 8
Even if a combined light/ion assist mechanism is installed,
Even if metal or ceramic sintered bodies are used for the targets 9 and 10, the composition and structure of the film can be controlled by controlling the ion beam current and shuttering.

A laser vapor deposition method is used as the energy for the main deposition mechanism of the formation tank 2, and an excimer laser is used as the light source 11. Also, like the formation tank 1, a combined light/ion assist mechanism including an assist light source 12 and an assist ion source 13 is provided. The target 14 is made of metal, ceramic sintered body, or the like. A film having the same composition as the target can be obtained without depending on the formation atmosphere.

i1MB as the energy of the main deposition mechanism of formation tank 3
The E method is used, and Knudsen cells 15, 16, 17, and 18 are used for the four-element deposition method. Also, like the formation tanks 1 and 2, a combined light/ion assist mechanism including an assist light source 19 and an assist ion source 20 is provided. By controlling and shuttering the deposition source, the composition and structure of the film can be controlled. In addition, a surface layer control mechanism 21 using an evaporation source or an ion source is installed in the main formation tank for the purpose of controlling the surface layer structure of the substrate before deposition or the film after deposition. This is the board that will be used.

The present inventors (Yo) compared the results when using any of the formation tanks 1, 2, or 3 with no assist mechanism or when using only a light or ion assist mechanism.
We confirmed that it was possible to obtain high-quality thin films at temperatures lower than 100°C by using a combined light/ion assist mechanism (2) that uses these simultaneous irradiations. ), it was confirmed that the surface structure of the substrate before deposition or of the film after deposition could be controlled.Furthermore, by using multiple formation tanks in succession, a multilayer film of different materials or a long-period structure could be formed. In order for the present invention to be better understood, we will confirm that it is possible to obtain a laminated film.The following describes the present invention using a dioxide superconductor and a ferroelectric material as examples (Example 1) First, the formation of FIG. Using tank 1, Bi-based superconductor B
When producing 125r2Can −+ Cun Ox, it was also mentioned on Twitter that (
yo Bi25g and 5r2CasCusOx respectively
Use 1. X, argon ion beams are irradiated from ion sources 5 and 6 to perform sputtering deposition on the substrate 22. By shuttering, Bi0 layer and 5rCaC
By alternately stacking uO layers and controlling the deposition rate of each layer by adjusting the ion beam current, BiaSrpCan-+Cun with a layered structure can be created by controlling the composition and structure.
A superconducting thin film of the desired phase (n=1.2.3) of Ox is obtained. In this case, in order to form a superconducting thin film with high crystallinity (magnesium tomooxide sapphire (α-A1
20s) A single-crystal substrate such as strontium titanate is effective, and the substrate temperature is around I-1600℃, which is appropriate.However, in order to obtain good superconducting properties (it is necessary to make the formation atmosphere oxidizing). For example, if an oxygen gas supply port is provided near the substrate.

Bi25r2Ca+Cu20 with a transition temperature of 80-
When a thin film with a thickness of 0.3 μm was formed by binding the (100) plane of the magnesium oxide single crystal to the substrate at a substrate temperature of 600°C, superconducting properties as shown by solid line 1 in Figure 2 were obtained. To investigate the effect of ion irradiation (
(2) A mercury lamp is used as the assist light source 7, and an ECR oxygen plasma source is used as the assist ion source 8. (9) Regardless of whether irradiation with ultraviolet light by a mercury lamp or irradiation with oxygen ions by an ECR source is performed, the dashed line 2 in FIG. 3
As shown in Figure 2, the superconducting transition temperature has increased and the properties of superconducting thin films have improved.
It has been confirmed that superconducting properties as shown by the solid line 1 in Figure 2 can be obtained even if the substrate temperature is lowered by 20 to 50°C, and when these simultaneous irradiations are performed (as shown in the solid line 4 in Figure 2). As shown in FIG. We discovered that a high-quality thin film could be obtained at a lower temperature by using a combined light/ion assist mechanism (Example 2) Next, using the formation bath 2 shown in Fig. 1, a ferroelectric (Pb+-
xLax) (ZrvTl+-J+-x740s (where X and y are each a value from 0 to 1) A magnesium oxide single crystal (100) surface sputter-deposited on the substrate 22 is used.A sintered body with a stoichiometric ratio is used as the target 14.ArF excimer and
A laser (wavelength: 193 nm) was focused on the target to obtain a power density of approximately 1 joule per cm2 per shot. The quantitative relationship between the formation layer atmosphere and the oxygen content of the formed film is not clear. The present inventors believe that in order to form a film with high crystallinity, the temperature range of the substrate should be 3.
Furthermore, the present inventors have confirmed that 50 to 750°C is appropriate.Furthermore, in this temperature range, regardless of the atmosphere,
Moreover, it was confirmed that the compositions of the constituent metal elements of the target and the formed film were the same.9 For example, sintered oxide ferroelectric materials Pbs, veLa@, 2+Ti@, *s
When Oa is used as a target and the reforming tank is in an oxygen gas flow atmosphere with a pressure of 10 Pascals, a film with a thickness of 0.25 μm can be obtained at a substrate temperature of 600°C and a film formation time of 1 hour.
Results of analysis by plasma emission spectroscopy Metal element composition ratio of the formed film: 4 & Pb: La: Ti = 0.7
It was confirmed that the stoichiometric ratio of 9+021:095, that is, the same as the target composition.The crystallinity of the film was analyzed using X-ray diffraction, and it was confirmed that it had a perovskite structure.Next, gold was used as the upper electrode. was vacuum-deposited using a mask with a diameter of 0.8 mm. Despite the relatively thin film thickness, there were no pinholes and it showed good electrical properties. 600 at a frequency of 100 Hz. Also, the polarization reversal characteristics measured using a Sawyer-Tower circuit are shown. (Table) The force that changes from an amorphous phase to a birochlore phase to a perovskite phase as the substrate temperature rises (dielectric wind properties such as polarization reversal characteristics change accordingly.Which properties of the thin film ferroelectric material are used depends on the application. , crystallinity of the coating,
Composition To optimize the surface condition, it is necessary to further consider the relationship between substrate temperature and film properties.
Using the same assist light source and ion source as in Example 1, we investigated the assist effects of light and ions.Crystalline china clay It was confirmed that the substrate temperature decreased.Especially when the simultaneous irradiation was performed, the combined assist of light and ions was used. (Example 3) Furthermore, using the formation bath 3 shown in Fig. Superconductor B
The case of producing i25raCan-+ Cu, O will be described. ii, for example, a Knudsen cell is used for the deposition sources 15, 16, 17 and 18\ Bi, respectively.
Used as a deposition source for Sr, Ca, and Cu. Temperature ζ of each cell
M Considering the deposition rate of each element, 480-1100
Controlled in the range of °C. BipSr2 with layered structure
Desired phase (n=1.2.3 of Can−+Cuno・
) To obtain a superconducting thin film of Bi−+ 5r−4, Bi−+ 5r−4
By alternately stacking Cu-+Ca-CIJ->Sr in one cycle, it is possible to form a thin film with higher precision by controlling the composition and structure. However, in order to form an oxide (mainly it is necessary to supply oxygen), if an oxygen gas supply port is provided near the substrate as in Example 1, Bi25r2Ca2CL having a transition temperature of 110
When a thin film with a thickness of 0.3μ is formed using a magnesium oxide single crystal (100) plane as a substrate for the 130X phase at a substrate temperature of 600°C, the formation atmosphere is such that superconducting properties as shown in solid line 1 in Figure 4 are obtained. Another way to make it oxidizing is to
When an ECR oxygen plasma source is used as the assist ion source 20 and oxygen plasma is introduced near the substrate, the superconducting properties do not improve as shown by the solid line 2 in Figure 4. When photo/ion composite assist was performed using the 3D method, the superconducting properties were further improved as shown by the solid line 3 in Figure 4, and it was found that superconducting properties as high as the solid line 1 could be obtained at a substrate temperature more than 100°C lower. (Example 4) Next, the surface layer structure control mechanism (21) attached to the formation tank 3
A superconducting thin film is formed on a Si substrate using the following method. First, for comparison, a deposition mechanism with light/ion composite assist similar to that in Example 3 was used.
When a 2(h thin film is directly formed on a 5i (100) substrate at a substrate temperature of 580'IC, it exhibits superconducting properties as shown by the solid line 1 in Figure 5. Compared to the solid line 1 in Figure 2, the characteristics are considerably different. The crystallinity was poor even when viewed from X-ray analysis.This is likely due to lattice mismatch with the substrate and mutual diffusion.To avoid these problems, the purpose of controlling the surface layer of the substrate was to Before forming the superconducting thin film, a buffer film calcium fluoride vapor deposition source is installed as the surface layer structure control mechanism 21 for forming the buffer film on the substrate.The lattice mismatch between Si and calcium fluoride is Calcium fluoride is as small as 0.6% and epitaxially grows on the 5j(100) substrate at a substrate temperature of 600°C.5i(100) with calcium fluoride formed as a 0.1 μm buffer film.
When a Bi25rzca+cu20y thin film is formed on a substrate, as shown by the solid line 2 in Figure 5 (2), there is a significant improvement in superconducting properties compared to the case where it is directly formed, and it is confirmed that there is an effect of controlling the substrate surface layer. 5) Next, a case will be described in which a multilayer structure film of superconductor and ferroelectric material is formed using formation baths 1 and 2 shown in FIG.

First, using formation tank 2, magnesium oxide single crystal (1,
00) 30 Y superconductors YBa2CLI having a transition temperature of 90 are fabricated on a plane substrate 22. target 1
As No. 4, a sintered body with a stoichiometric ratio is used. Same as Example 2. ArF excimer laser (wavelength 193 cm) was used as the light source.
Formation tank (2) i:L was under reduced pressure (10 Pa) in an oxygen atmosphere.The present inventors believe that in order to form a highly crystalline film, the substrate temperature range is 350 to 750°C. It was confirmed that in this temperature range, the composition of the constituent metal elements of the target and the formed film matched regardless of the atmosphere.Also, as in Example 2, the combined assist effect of light/ions was confirmed. Confirmation 9 Thin film superconductor Y with C-axis orientation at a substrate temperature of 450°C
The substrate 22 on which the superconductor YBa2Cu+Ox was formed to a thickness of 0.2 μm was moved to the forming bath 1 together with the substrate heating holder 4, and then the ferroelectric PbZr was deposited as the second layer. -Tx+-・0
3. In this case, targets (9) and (1
0) to (friend) PbTiO3 and PbZrO3 respectively
(Argon ion beams are irradiated from ion sources 5 and 6 to perform ion beam sputtering deposition on the substrate 22.The deposition rate can be controlled by adjusting the ion beam current.The composition can be controlled to obtain a desired composition. A ferroelectric material MPbZrxTi+-xo3 having the following properties is obtained.

In order to obtain good ferroelectricity, an oxygen gas supply port is provided near the substrate, making the formation atmosphere oxidizing.

Similar to Example 1, the combined assist effect of light/ions was confirmed. At a substrate temperature of 500°C, a thin film ferroelectric PbZr5. yTis, 303 was obtained.The substrate 22 was further moved to the formation bath 2, and the Y superconductor YBa2CuaOX was produced again as the third layer, resulting in a superconductor (YBa2Cu30x)/ferroelectric (
PbZr5, vTi@5r3)/superconductor (YB
A laminated film of a2Cu30X)/substrate (magnesium oxide single crystal) can be obtained.

With appropriate masking, the superconducting and ferroelectric properties of each layer can be measured. YBa2C1,130x 'C table for the 1st and 3rd layers Showing good superconducting properties as shown by solid lines 1 and 2 in Figure 6 respectively L 2nd layer PbZr@, vTis30aLL, frequency 100H
As shown in the I)-E hysteresis in FIG. It has been confirmed that it is possible to form a multilayer structure film consisting of a superconductor and a ferroelectric material. It is considered that epitaxial growth is easy.

(Example 6) Next (Mi) Using the formation tanks 1 and 2 shown in Fig. 1, superconductors of different materials Example i; U Bi25rpCa+Cup
The case of forming a laminated film consisting of Ox and YBa2cu30x will be described.

First, in the formation tank 1, a deposition mechanism similar to that in Example (1) was used to form a layered structure of Bi25r2Cat C.
Magnesium oxide single crystal (100) plane substrate 22 with one layer of U2 hook thin film, that is, C axis length (31 people)
Form on top. Next, move this to the forming tank 2. Example 5
Using the same deposition mechanism as above, one layer of υ\YBa2CusO., that is, the length of the C axis (11,7 layers) is formed.

Thereafter, a Bi25r2Ca+Cu20x film is sequentially formed in formation tank 1 and a YBa2CLJ30X film is formed in formation tank 2, thereby obtaining a laminated film. Regarding the structure of the obtained laminated film (according to X-ray diffraction, Bi25r2C
Peaks corresponding to the C-axis oriented films of a+Cu20x and YBa2CuaOx were observed, and a long-period structure corresponding to the stacking period of 43 people was observed, and its crystallinity was recognized to be extremely excellent.Also, its superconducting properties 1. As shown in FIG. 8, the results are good. 9. It is confirmed that by continuously using a plurality of forming baths according to the present invention, it is possible to obtain a laminated film having a long-period structure of superconductors made of different materials. 9 (Example 7) Next, a case will be described in which a thin film ferroelectric is formed on a Si substrate using a surface layer structure control mechanism attached to the formation bath 3.

First, for comparison, using LX, a 0.3 μm ferroelectric Pbs, veLaa, p+Tii, 9sO3 thin film was deposited using a deposition mechanism with light/ion composite assist similar to that in Example 2 at a substrate temperature of 450°C. (100) When gold was formed directly on the substrate as the T-island upper electrode and vacuum-deposited using a mask with a diameter of 0.8m+n, and the properties in the film thickness direction were evaluated, the relative dielectric constant was a little small at 100 at a frequency of 100Hz;
In addition, DE hysteresis 1 shows ferroelectricity as shown in Figure 9. The coercive electric field is a little high at 100 kV/Cm, and the amount of reversal charge is also a little small at 10 μC/cm. Therefore, in order to control the surface layer structure of the substrate and form a low-resistance base electrode, a TiN film was formed in the formation bath 3 before forming the ferroelectric film. That is, a Ti ion source is installed as the surface layer structure control mechanism 21, and a N ion source is installed as the assist ion source 20.
A TiN film with a thickness of 0.1 μm is formed on the substrate.
The N film has a (100) orientation and the lattice constant is Pbs〒sLa@
, 2+Tia, and e are also close to those of 03, and epitaxial growth can be expected. The 5i (100) substrate on which TiN was formed was moved to formation bath 2, and a ferroelectric Pb@, veLai, 2+Tie, e503 thin film was formed to a thickness of 0.3 μm at a substrate temperature of 450°C using the same mechanism as before and evaluated. The relative permittivity is 500 at a frequency of 100H2. In addition, as shown in FIG. 10, the I)-E hysteresis also showed good ferroelectricity comparable to that of Example 2. It was confirmed that a good thin film ferroelectric material could be formed even on a Si substrate by continuous use of multiple forming baths and a surface layer structure control mechanism (Example 8).In Example 6, by continuous use of forming baths 1 and 2. , it was possible to form a laminated film with a long-period structure made of superconductors made of different materials.Also, it is possible to form a laminated film made of ferroelectrics made of different materials by the same means with a strong ferroelectric material. .Following Example 5, ferroelectric PbZr5, ?
A laminated film can be obtained by forming one layer of ferroelectric BaTjO3 in the formation bath 2 according to Example 2 in one cycle of i@, 303. According to X-ray diffraction, P
bZr5, vTis, aOs and BaTiO
A peak corresponding to the C-axis oriented film of 3 was observed, and a long-period structure corresponding to the lamination period was observed, and its crystallinity was recognized to be very excellent.It also had excellent electrical properties. Ferroelectric property is recognized 9 Method for forming a thin film according to the present invention and apparatus for forming the same Table 4 This method is particularly effective for forming thin films of multi-component oxide superconductors and ferroelectrics. In order to apply these materials to electronic devices, it is necessary to grow them with good crystallinity without damaging semiconductor substrates or chips.
The present forming method and its forming apparatus are extremely effective since they can be formed at a low substrate temperature by making full use of the assist effects of light and ions.

In this example (above), the ion beam sputtering method, laser evaporation method, and MBE method were used as the deposition method.
All of these are suitable for these multi-component systems because they do not cause compositional fluctuations or are easy to control. The formation atmosphere and the like are quite different (by continuous use within the formation apparatus, a highly functional composite film can be formed, and it can also be applied to the fabrication of devices such as buffer A conductive films and insulating films).

Effects of the Invention As is clear from the above embodiments, according to the present invention, in addition to the energy of the main deposition mechanism of the constituent elements of the compound thin film, combined assistance is provided by simultaneous irradiation of light and ions, so that the stoichiometric ratio can be achieved at low temperatures. Conformed thin films or multilayer thin films can be provided.

[Brief explanation of the drawing]

FIG. 1 shows a schematic configuration of a thin film forming apparatus according to an embodiment of the present invention. FIG. 2 shows the temperature of resistance, which is the superconducting property of a thin film superconductor (Bi2Sr2Ca+Cu20x) formed using the thin film forming apparatus of FIG. 1. Fig. 3 shows the polarization reversal characteristics of a thin film ferroelectric material (Pb9.veLa@, p+Tis, 9sOs) formed using the thin film forming apparatus shown in Fig. 1. Fig. 4 shows the temperature dependence of the resistance, which is the superconducting property, of a thin film superconductor (Bi2Sr2Ca2Cu30.) formed using the thin film forming apparatus shown in Fig. 1. Figure 6 shows the temperature dependence of resistance, which is a superconducting property, of a thin film superconductor (Bi2Sr2Cat CL120X) formed using the thin film forming apparatus shown in Figure 1.
Figure 7 shows the temperature dependence of the resistance, which is the superconducting property of YBa2CL130X).
Figure 8 shows a thin film superconductor (Bi2Sr2Ca+Cu2
Figure 9 shows the temperature dependence of the resistance, which is the superconducting property of 0x / YBa2CusOx ). Figure 9 shows a thin film ferroelectric (Pbs,
7eLas, p+Tis, s50g) @ Figure 10 shows the polarization reversal characteristic of D-El::steresis (PbiveLai, ++Tia, 5603), which was also formed using the thin film forming apparatus shown in Figure 1. FIG. 3 is a diagram showing the DE hysteresis that shows the polarization reversal characteristics of the polarization reversal characteristic. 5.6...Ion source (main deposition mechanism), 7,12
．． 19...Assist light #8,13.20...
Name of Assist Aeon's agent: Patent attorney Shigetaka Awano. ! l) Song #mourning disorder and - Yashu tsutsu absolute temperature (Keruhin) (Nin) Absolute 1 (Guru 1)

Claims (6)

[Claims] (1) A method for forming a thin film, which is characterized by performing combined assist by simultaneous irradiation with light and ions in addition to the energy of the main deposition mechanism of the constituent elements of the thin film. (2) The method for forming a thin film according to claim (1), further comprising the step of controlling the surface layer structure of the substrate before forming the thin film or the thin film after forming using an ion source or a vapor deposition source. (3) At least one of the steps of performing a composite assist by simultaneous irradiation of light and ions in addition to the energy of the main deposition mechanism of the constituent elements of the thin film, and controlling the surface layer structure by the composite assist and an ion source, etc. 1. A method for forming a laminated thin film, comprising one or more steps. (4) A thin film forming apparatus characterized by being equipped with a composite assist mechanism for simultaneous irradiation with light and ions in addition to the main deposition mechanism of constituent elements of the thin film. (5) Formation of a thin film according to claim (4), characterized in that a surface layer structure control mechanism using an ion source or a vapor deposition source is added to control the surface layer structure of the substrate before the thin film is formed or the thin film after the thin film is formed. Device. (6) In addition to the main deposition mechanism for the constituent elements of the thin film, it also has a composite assist mechanism using simultaneous light and ion irradiation.
A laminated thin film forming apparatus characterized by having at least one forming tank, comprising at least one of the above forming tank, its composite assist mechanism, and a surface layer structure control mechanism using an ion source.