JPH0465393A - Macromechanical parts and production thereof - Google Patents
Macromechanical parts and production thereofInfo
- Publication number
- JPH0465393A JPH0465393A JP17733590A JP17733590A JPH0465393A JP H0465393 A JPH0465393 A JP H0465393A JP 17733590 A JP17733590 A JP 17733590A JP 17733590 A JP17733590 A JP 17733590A JP H0465393 A JPH0465393 A JP H0465393A
- Authority
- JP
- Japan
- Prior art keywords
- shaft
- single crystal
- mask
- rotating
- rotating part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000013078 crystal Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims description 14
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000015556 catabolic process Effects 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Rolls And Other Rotary Bodies (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は、極微小の光学装置において使用されるミクロ
ンサイズの回転機構部品とその製作技術に関するもので
ある。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a micron-sized rotating mechanism component used in an extremely small optical device and a manufacturing technique thereof.
〈従来の技術〉
ミクロンサイズの回転体とその作製法については、シリ
コンを基体とする集積回路形成技術を応用したものがケ
ー。イー、ビーターソンらによってプロシーデインゲス
オブアイイーイーイー 第７０巻、５号 ４２０−４
５７ページ（Ｋ、Ｅ、Ｐｅｔｅｒｓｏｎ： ５ｉｌｉｃ
ｏｎ ａｓａ Ｍｅｅｂａｉｎｅａｌ Ｍａｔｅｒｉａ
ｌＰｒｏｃｅｅｄｉｎｇ ｏｆ ＩＥＥＥｖｏｌ、 ７
０． Ｎｏ、 ５ ｐｐ、 ４２０−４５７．１９８２
）に報告されており、同様の技術によりシリコンを基体
とし、回転軸と回転体を多結晶シリコンとするマイクロ
モータがエル、ニス、ファンらによって１９８８年１２
月のアイイーイーイアインターナシ璽ナル エレクトロ
ン デバイス ミーティング（Ｌ、 Ｓ、Ｆａｎ、Ｙ、
Ｃ，Ｔａｉ、 ａｎｄ Ｒ，Ｓ、ＭｕｌｌｅｒＴＣＰ
ｒｏｃｅｓｓｅｄ Ｅｌｅｅｔｒｏｓｔａｔｉｅ
Ｍｉｃｒｏ Ｍｉｃｒ。<Conventional technology> Micron-sized rotating bodies and their manufacturing methods are based on silicon-based integrated circuit formation technology. Yi, Beaterson, et al. Proceedings of Yieeeeeeee Volume 70, No. 5 420-4
Page 57 (K, E, Peterson: 5ilic
on asa Meebaineal Materia
lProceeding of IEEE vol. 7
0. No. 5 pp. 420-457.1982
), and using a similar technology, a micromotor with a silicon base and a rotating shaft and rotating body made of polycrystalline silicon was developed by Elle, Niss, and Huang in December 1988.
Moon's Aiiiiia International Seal Electron Device Meeting (L, S, Fan, Y,
C, Tai, and R, S, MullerTCP
rocessed Eleetrostatie
MicroMicr.
Ｍｏｔｏｒｓ：ＩＥＥＥ Ｉｎｔｅｒｎａｔｉｏｎａ
ｌ Ｅｌｅｃｔｒｏｎ ＤｅｖｉｃｅｓＭｅｅｔｉｎ
ｇ、ｐｐ ６６６−６６９．Ｄｅｃ、１９８８ ）にお
いて発表されている。Motors: IEEE International
l Electron DevicesMeetin
g, pp 666-669. Dec, 1988).
〈発明が解決しようとする課題〉
前述の文献の中で指摘されているように、回転体である
回転部と基体部との間、及び回転部と軸との間のＷＩｉ
擦のため、回転部の連続的な回転により、あるいは回転
数を大きくすることにより、軸が損傷し、回転部が軸か
ら外れてしまうという課題を有していた。<Problems to be Solved by the Invention> As pointed out in the above-mentioned literature, WIi between the rotating part that is a rotating body and the base part, and between the rotating part and the shaft.
Due to friction, the shaft is damaged due to continuous rotation of the rotating part or by increasing the number of rotations, causing the rotating part to come off the shaft.
この原因は、以下の説明のように考えられている。The reason for this is thought to be as explained below.
すなわち、断面概要が示される第５図に表わされるよう
に、従来、基体部１５はシリコンの単結晶で形成されて
いるが、軸１７及び回転部１８は、多結晶シリコンで形
成さね、また、製造の最終工程でエツチングにより除去
される除去層（犠牲層）１９は酸素珪素の酸化膜で作ら
れている。That is, as shown in FIG. 5, which shows a cross-sectional outline, conventionally, the base portion 15 is made of single crystal silicon, but the shaft 17 and the rotating portion 18 are made of polycrystalline silicon. The removal layer (sacrificial layer) 19, which is removed by etching in the final step of manufacturing, is made of an oxy-silicon oxide film.
従って、回転部１８の表面には多結晶の粒子サイズの凹
凸があり、この凹凸により回転部１８と、軸１７あるい
は基体部１５との間のｌＩ擦が大きくなる結果、損傷が
速いと推測されている。Therefore, it is assumed that the surface of the rotating part 18 has irregularities of polycrystalline particle size, and these irregularities increase the friction between the rotating part 18 and the shaft 17 or the base part 15, resulting in rapid damage. ing.
尚、このように回転部１８として多結晶を用いているの
は、基体部］５であるシリコン単結晶基板上に窒化珪素
１６を堆積し、これを絶縁層とした後、酸素珪素て除去
層を形成する構造としたためであり、さらに、この後、
シリコンの気相成長法で、窒化膜や酸化膜の上に多結晶
シリコンが堆積する性質を利用して回転体１８を形成し
ているためである。The reason why polycrystal is used as the rotating part 18 in this way is that silicon nitride 16 is deposited on a silicon single crystal substrate which is the base part 5, and after this is used as an insulating layer, an oxygen silicon layer is removed. This is because the structure forms
This is because the rotating body 18 is formed by utilizing the property that polycrystalline silicon is deposited on a nitride film or an oxide film using a silicon vapor phase growth method.
本発明では、前述の！！題を解決すべく軸と回転部とな
るべきところ、およびそれらのあいだに形成する除去層
を基体部上にそれぞれ単結晶材質で形成したのち、軸と
回転部の間の間隙に存在する除去層である単結晶材質（
犠牲層）部分をエツチングによって選択的に除去し、そ
の結果として表面の平坦性と機械的強度に優れた単結晶
の軸と回転部が基体上に形成されているマイクロメニヵ
ル部品を提供するものである。In the present invention, the aforementioned! ! In order to solve this problem, the removal layer that is to be formed between the shaft and the rotating part and between them is formed on the base part using a single crystal material, and then the removal layer that exists in the gap between the shaft and the rotating part is formed on the base part. A single crystal material (
The sacrificial layer) portion is selectively removed by etching, and as a result, a micromenical component is provided in which a single-crystal axis and rotating portion with excellent surface flatness and mechanical strength are formed on the base body. .
く課題を解決するための手段〉
本発明によるマイクロメカニカル部品は、回転の中心と
なる軸と、該軸が挿入さねて回転し得る回転部と、該軸
を支持する基体部とがそれぞれ単結晶材質により形成さ
れていることを特徴とするものである。Means for Solving the Problems> The micromechanical component according to the present invention has a shaft serving as a center of rotation, a rotating portion into which the shaft can be inserted and rotated, and a base portion supporting the shaft. It is characterized by being formed of a crystalline material.
本発明によるマイクロメカニカル部品の製造方法は、基
体部となる単結晶基板の表面に軸となる柱状部分を形成
し、該柱状部分を埋め込むと共に前記基体部を覆うよう
に前記基体部と異なる材質からなる単結晶材質の除去層
をエビタキンヤル成長し、さらに該除去層上に前記軸が
挿入されて前記軸を中心として回転する回転部となる層
を前記基体部と同質の単結晶材質でエピタキンヤル成長
した後・前記除去層のみを選択的に除去して前記基体部
と前記回転部とを相対回転自在に分離することを特徴と
するものである。A method for manufacturing a micromechanical component according to the present invention includes forming a columnar portion serving as an axis on the surface of a single crystal substrate serving as a base portion, embedding the columnar portion, and making a material different from that of the base portion so as to cover the base portion. A removed layer of a single crystal material having the same quality as that of the substrate was epitaxially grown, and a layer into which the shaft was inserted and which would become a rotating part rotating around the shaft was epitaxially grown on the removed layer of a single crystal material of the same quality as the base part. Rear: Only the removal layer is selectively removed to separate the base portion and the rotating portion so that they can rotate freely relative to each other.
すなわち本発明は、回転部、回転軸あるいは固定軸など
の軸、軸が取り付けられている基体部、回転部と軸との
間の形成される除去層、及び回転部と基体部との間に形
成される除去層を単結晶で形成することを特徴とするこ
とを最も主要な特徴とする。従って、従来の技術では、
回転部と軸を多結晶で形成し、除去層を酸化珪素などの
ガラス物質で形成していたところが異なる。That is, the present invention provides a rotating part, a shaft such as a rotating shaft or a fixed shaft, a base part to which the shaft is attached, a removal layer formed between the rotating part and the shaft, and a removal layer between the rotating part and the base part. The main feature is that the removal layer formed is formed of a single crystal. Therefore, in the conventional technology,
The difference is that the rotating part and shaft are made of polycrystalline material, and the removal layer is made of a glass material such as silicon oxide.
く作 用〉
軸、基体部及びこの軸を中心として回動する基体部が、
それぞれ単結晶物質で形成されているため、回転体の回
動の際、滑らかな単結晶物質表面同志の摺動となり、摩
擦及び摩耗等による軸、回転部及び基体部の破損が防止
される。Action〉 The shaft, the base part, and the base part that rotates around this shaft,
Since they are each made of a single crystal material, when the rotating body rotates, the smooth surfaces of the single crystal material slide against each other, preventing damage to the shaft, rotating portion, and base portion due to friction, wear, etc.
この際、回転部の一部に光学的反射鏡あるいは回折格子
が形成されることにより、マイクロメカニカル部品によ
る光源からの光取出し方向が任意に選択され、また、光
が集合・散乱される。At this time, by forming an optical reflection mirror or a diffraction grating in a part of the rotating part, the direction of light extraction from the light source by the micromechanical component is arbitrarily selected, and the light is collected and scattered.
同じく、回転部の一部にギヤが形成されることにより、
ギヤの噛合いの際のｊ＠擦による回転部の破損が防止さ
れる。Similarly, by forming a gear in a part of the rotating part,
Damage to the rotating part due to friction during gear meshing is prevented.
次に、このマイクロメカニカル部品を製造するに際して
は、基体部となる単結晶基板の表面及びこの表面に形成
された柱状部分の周囲を、エピタキシャル成長した単結
晶材質の除去層が覆う。さらに、その上を回転部となる
へく、基体部と同質であってエピタキシャル成長する単
結晶材質の層が覆いその後、除去層のみを選択的に除去
することにより、基体部に対して回転部が分離される。Next, when manufacturing this micromechanical component, a removal layer of an epitaxially grown single crystal material covers the surface of the single crystal substrate serving as the base portion and the periphery of the columnar portion formed on this surface. Furthermore, a layer of epitaxially grown single-crystal material that is the same as the base part covers the rotating part, and then only the removal layer is selectively removed. Separated.
この際、回転部となる層の表面上をマスクした後、柱状
部分の上面部分のマスクを除去し、除去された箇所に基
体部と同質の単結晶材質の層がエピタキシャル成長し、
マスクの上面にまで柱状部分が伸びろ。At this time, after masking the surface of the layer that will become the rotating part, the mask on the upper surface of the columnar part is removed, and a layer of single crystal material of the same quality as the base part is epitaxially grown in the removed part.
The columnar part should extend to the top of the mask.
く実 施 例〉
本発明の第１実施例を第１図に示し、この図に基づき本
実施例を説明する。Embodiments A first embodiment of the present invention is shown in FIG. 1, and this embodiment will be explained based on this figure.
結晶面の方位が（１００）であり、また基体部となるイ
ンジウムリン（ＩｎＰ）単結晶基板１上に軸径を規定す
る円盤状の酸化珪素マスク２を形成し、軸となる円柱３
を光りソグラフィ技術で第１図（Ｋｌのように形成する
。しかる後、上記のマスク２を付けたまま、エピタキシ
ャル結晶成長法で単結晶インジウムガリウムひ素（Ｉｎ
にａＡｓ） ４および単結晶１ｎＰ５を第１図（ｂｌの
ように連続的に２層成長する。A disk-shaped silicon oxide mask 2 defining an axis diameter is formed on an indium phosphide (InP) single-crystal substrate 1 whose crystal plane has an orientation of (100) and a base portion, and a cylinder 3 serving as an axis.
is formed as shown in FIG.
Two layers of aAs) 4 and single crystal 1nP5 are grown continuously as shown in Figure 1 (bl).
尚、この際、ＩｎＧａＡｓ、 ＩｎＰは成長選択性があ
るため、酸化珪素マスク２上には堆積しない。At this time, InGaAs and InP are not deposited on the silicon oxide mask 2 because they have growth selectivity.
次に、酸化珪素マスク２と同一材料の酸化珪素マスク６
を第１図（Ｃ）に示すように形成する。Next, a silicon oxide mask 6 made of the same material as the silicon oxide mask 2 is made.
is formed as shown in FIG. 1(C).
この後、第１図（ｄｌて示すように、円柱３の頂部によ
り規定される大きさで酸化珪素膜を除去し、いわゆる窓
６ａをこの部分に形成する。Thereafter, as shown in FIG. 1 (dl), the silicon oxide film is removed in a size defined by the top of the cylinder 3, and a so-called window 6a is formed in this portion.
そして、この窓６ａの部分にＩｎＰ２３を第１図（ｅ）
に示すように結晶成長させる。Then, InP23 is applied to this window 6a as shown in Fig. 1(e).
The crystals are grown as shown in .
この結晶成長において、酸化珪素マスク６を剥がした箇
所は基体部から伸びた円柱３のＩｎＰ結晶が露出してい
るため、ホモ成長となりＩｎＰの円柱３と結晶成長した
ＩｎＰ２３とは一体となる。In this crystal growth, since the InP crystal of the cylinder 3 extending from the base body is exposed at the location where the silicon oxide mask 6 is removed, homogrowth occurs and the InP cylinder 3 and the crystal-grown InP 23 become one.
このような窓６ａにＩｎＰを成長させ、その厚さが酸化
珪素膜の厚さより大きくなると、１ｈＰ２３にように酸
化珪素膜のうえに広がる傾向があるため、回転部が軸か
ら抜は落ちない構造が形成される。次に、第１図（ｆ）
で示されるように、単結晶１ｎＰ ５から回転部８の外
径を規定するためのエツチングを行う。このエツチング
ては１ｎＰとＩｎＧａＡｓの両方に対して選択性をもた
ない腐食液（例えば臭素４％・メタノール９６％）を用
いる。つぎにＩｎＧＩＬ人Ｓ４を除去するエツチングを
ほどこすと、第１図ｆｇｌに示すように、ＴｎＰだけか
らなる円柱３とＩｎＰ２３とて構成される軸７、及び単
結晶１ｎＰ ５から形成された回転部８は、空間的に分
離される。If InP is grown in such a window 6a and its thickness becomes larger than the thickness of the silicon oxide film, it tends to spread over the silicon oxide film as shown in 1hP23, so a structure is created in which the rotating part does not fall off the shaft. is formed. Next, Figure 1(f)
As shown in the figure, etching is performed to define the outer diameter of the rotating part 8 from the single crystal 1nP 5. This etching uses an etchant (for example, bromine 4%/methanol 96%) that does not have selectivity for both 1nP and InGaAs. Next, when etching is performed to remove the InGIL layer S4, as shown in FIG. 8 are spatially separated.
この理由は、上記のエツチング液がＩｎＰに対するより
ＩｎＧａＡｓに対して強い溶解性を持ち、エツチング速
度は数１００倍１ｎＧａＡｓの方が速いためである。The reason for this is that the above-mentioned etching solution has a stronger solubility for InGaAs than for InP, and the etching rate for 1 nGaAs is several hundred times faster.
次に、本発明の第２実施例を第２図に示し、この図に基
づき本実施例を説明する。Next, a second embodiment of the present invention is shown in FIG. 2, and this embodiment will be explained based on this figure.
第１実施例の製造方法によすｌｎＰ単結晶基板１上に軸
７及び回転部８を形成したものを第２図に示し、この回
転部８の一端に光学的平面反鏡９が形成されている。さ
らに、ＩｎＰ単結晶基板１上の別の箇所に形成されたＩ
ｎＧａＡｓＰを活性層とする発光ダイオード１０と、こ
の回転部８とがモノシリツクＳ積されている。FIG. 2 shows a structure in which a shaft 7 and a rotating part 8 are formed on an lnP single crystal substrate 1 according to the manufacturing method of the first embodiment, and an optical plane mirror 9 is formed at one end of this rotating part 8. ing. Furthermore, I formed at another location on the InP single crystal substrate 1
A light emitting diode 10 having an active layer of nGaAsP and this rotating part 8 are stacked in a monolithic structure.
以上より、この回転部８が軸７まわりに回動することに
より、反射光の射出方向が変更される。As described above, by rotating this rotating part 8 around the axis 7, the emission direction of the reflected light is changed.
尚、本実施例において、平面反射鏡としたが、曲面反射
鏡としても同様の技術で作製することができ、また、発
光ダイオード１０の代わりにレーザとしてもよい。In this embodiment, a flat reflecting mirror is used, but a curved reflecting mirror can also be manufactured using the same technique, and a laser may be used instead of the light emitting diode 10.
次に、本発明の第３実施例を第３図に示し、この図に基
づき本実施例を説明する。Next, a third embodiment of the present invention is shown in FIG. 3, and this embodiment will be explained based on this figure.
第１実施例の製造方法により、ＩｎＰ単結晶基板１上に
軸７及び回転部８を形成したものを第３図に示し、この
回転部８の一端に回折格子１１が形成されている。さら
に、第２実施例と同様に発光ダイオード１０が集積され
ている。FIG. 3 shows a structure in which a shaft 7 and a rotating part 8 are formed on an InP single crystal substrate 1 by the manufacturing method of the first embodiment, and a diffraction grating 11 is formed at one end of this rotating part 8. Furthermore, a light emitting diode 10 is integrated as in the second embodiment.
以上より、第２実施例同様に回転部８が回動すると、例
えば回折格子１１により波長選択された光の射出方向が
変更される。As described above, when the rotating section 8 rotates as in the second embodiment, the direction of emission of the light whose wavelength has been selected by the diffraction grating 11 is changed, for example.
さらに、本発明の第４実施例を第４図に示し、この図に
基づき本実施例を説明する。Furthermore, a fourth embodiment of the present invention is shown in FIG. 4, and this embodiment will be explained based on this figure.
第４図に示すように、本実施例は、回転部８の一部にピ
ニオンギヤ１３を形成したものであり、さらに、基板表
面に固型のコイルヒータ１４を形成すると共に、このコ
イルヒータ］４の上にラックギヤ１２を第１実施例と同
様の製造方法て形成したものである。As shown in FIG. 4, in this embodiment, a pinion gear 13 is formed in a part of the rotating part 8, and a solid coil heater 14 is further formed on the surface of the substrate. A rack gear 12 is formed on the rack gear 12 using the same manufacturing method as in the first embodiment.
本実施例の場合、コイルヒータ１４に流す電流を変えろ
ことによりラックギヤ１３が熱膨て伸び、この結果とし
て、ラックギヤ１３の先端側の直線連動がピニオンギヤ
１３との噛合を介して、反射鏡９の回転連動に変換され
る。In the case of this embodiment, by changing the current flowing through the coil heater 14, the rack gear 13 thermally expands and expands, and as a result, the linear interlocking of the front end of the rack gear 13 is caused by the engagement with the pinion gear 13, and the reflection mirror 9 is Converted to rotation interlocking.
すなわち、これらの実施例から理解できるように、本発
明の要点は、エツチングの選択性を有する２種以上の単
結晶材質を用いて、マイクロメカニカル部品を製造し、
提供することにある。That is, as can be understood from these examples, the gist of the present invention is to manufacture micromechanical parts using two or more types of single crystal materials having etching selectivity,
It is about providing.
つまり、エツチング後に残る軸７、基体部てあろＩｎＰ
単結晶基板１、及び回転部８を形成する単結晶材質と、
エツチングにより除去される除去層を形成する単結晶材
質とを異なる材料より構成することを特徴とするもので
ある。In other words, the shaft 7 remaining after etching and the base portion are InP.
A single crystal substrate 1 and a single crystal material forming the rotating part 8;
This method is characterized in that the single crystal material forming the removal layer to be removed by etching is made of a different material.
従って、軸７と回転部８との間の間隙、回転部８とＩｎ
Ｐ単結晶基板１との間の間隙に位置することとなる単結
晶材質をエビタシャル成長により形成し、それらの間隙
に成長した単結晶部材を選択的に除去し、軸７と回転部
８を空間的に分離するものである。以上より、単結晶の
エピタキシャル成長が可能でエツチングの選択性のある
部材を選べば、単結晶材の種類を限定するものでない。Therefore, the gap between the shaft 7 and the rotating part 8, the gap between the rotating part 8 and the In
A single crystal material that will be located in the gap between the P single crystal substrate 1 and the P single crystal substrate 1 is formed by epitaxial growth, and the single crystal material that has grown in the gap is selectively removed, and the shaft 7 and the rotating part 8 are spaced apart. It is a separate thing. From the above, the type of single crystal material is not limited as long as a member that allows single crystal epitaxial growth and has etching selectivity is selected.
たとえばＧａＡｓ−人ｌＧａＡｓ、ＧａＡｓ−Ｚｎ５ｅ
、ＧａＡｓ−Ｇｅ、Ｉｎｋ−ＴｎＧａＡｓＰが適用可能
である。また構成されている部材はすべて単結晶である
ため、その表面ば原子的オーダで平坦になることが期待
できるので、凹凸による摩擦の問題は殆ど無視できる。For example, GaAs-1GaAs, GaAs-Zn5e
, GaAs-Ge, and Ink-TnGaAsP are applicable. Furthermore, since all of the constituent members are single crystals, their surfaces can be expected to be flat on the atomic order, so the problem of friction due to unevenness can be almost ignored.
また、軸７と回転部８は上記の例では円柱状の場合を示
したが、円柱以外の例えば多角形に軸を同様の技術で形
成することもできる。In addition, although the shaft 7 and the rotating part 8 are cylindrical in the above example, the shaft may be formed into a shape other than a cylinder, for example, a polygon, using the same technique.
〈発明の効果〉
本発明のマノクロメカニカル部分及びその製造方法によ
れば、凹凸がなく滑らかな基体部上の表面に、凹凸がな
く滑らかな軸及び回転部を製造することができる。従っ
て、回転部の連続的な回転あるいは、回転数を大きな値
とすることによっても、このような方法で製造された軸
、回転部等は容易に破損することがなくなる。<Effects of the Invention> According to the manochrome mechanical part and the manufacturing method thereof of the present invention, it is possible to manufacture a smooth shaft and rotating part without any unevenness on the smooth surface of the base part without any unevenness. Therefore, even if the rotating part is rotated continuously or the number of rotations is set to a large value, the shaft, rotating part, etc. manufactured by this method will not be easily damaged.
また、す上のように製造されたマイクロメカニカル部品
の回転部に反射鏡あるいは回折格子を形成すると共に、
光源を形成すると、基体部上に全体をモノリシック集積
することがてきるので光源との光軸合せの必要が無くな
る利点がある。そして、回転軸と反射鏡を一体形成でき
るので光源からの光の取り出し方向を任意に選へるだけ
てなく、集光あるいは散乱させることも可能となる。In addition, a reflecting mirror or a diffraction grating is formed on the rotating part of the micromechanical component manufactured as above, and
Forming the light source has the advantage of eliminating the need for optical axis alignment with the light source because the entire structure can be monolithically integrated on the base. Furthermore, since the rotating shaft and the reflecting mirror can be integrally formed, it becomes possible not only to arbitrarily select the direction in which light is extracted from the light source, but also to condense or scatter the light.
さらに、１ａ積化した全体の大きさは数百ミクロン角の
チップにすることも容易であるため、他の部品に組み込
むことが容易になる。Furthermore, since the overall size of the 1A stack can easily be made into a chip of several hundred microns square, it is easy to incorporate it into other parts.
また、従来、報告例のあるマイクロモータなとのＶ動部
品に応用することが可能である。Furthermore, it is possible to apply the present invention to V-moving parts such as micro motors, which have been reported in the past.
第１図は本発明のマイクロメカニカル部品及びその製造
方法に係る第１実施例の工程説明図、第２図は本発明の
マイクロメカニカル部品に係る第２実施例の斜視図、第
３図は本発明のマイクロメカニカル部品に係る第３実施
例に斜視図、第４図は本発明のマイクロメカニカル部品
に係る第４実施例の斜視図、第５図は従来の技術に係る
マイクロメカニカル部品及びその製造方法の断面図であ
る。
図面中、
１はＩｎＰ単結晶基板、２，６ば酸化珪素マスク、３は
円柱、４は単結晶ＩｎＧａＡｓ、 ５：よ単結晶子ｎＰ
、７．１７は軸、８，１８は回転部、９は反射鏡、１０
は発光ダイオード、１１は回折格子、１２；よラックギ
ヤ、１３はピニオンギヤ、１４はコイルヒータ、１５は
基体部、１９は除去層である。
図
第
図
第
図
第
図FIG. 1 is a process explanatory diagram of the first embodiment of the micromechanical component of the present invention and its manufacturing method, FIG. 2 is a perspective view of the second embodiment of the micromechanical component of the present invention, and FIG. 3 is a diagram of the present invention. A perspective view of a third embodiment of the micromechanical component of the invention, FIG. 4 is a perspective view of a fourth embodiment of the micromechanical component of the invention, and FIG. 5 is a perspective view of a micromechanical component of the prior art and its manufacture. FIG. 3 is a cross-sectional view of the method. In the drawing, 1 is an InP single-crystal substrate, 2 and 6 are silicon oxide masks, 3 is a cylinder, 4 is single-crystal InGaAs, and 5 is a single-crystal nP crystal.
, 7.17 is a shaft, 8 and 18 are rotating parts, 9 is a reflecting mirror, 10
11 is a light emitting diode, 11 is a diffraction grating, 12 is a rack gear, 13 is a pinion gear, 14 is a coil heater, 15 is a base portion, and 19 is a removal layer. Figure Figure Figure Figure
Claims (6)
得る回転部と、該軸を支持する基体部とがそれぞれ単結
晶材質により形成されていることを特徴とするマイクロ
メカニカル部品。(1) A micromechanical component characterized in that a shaft serving as a center of rotation, a rotating portion into which the shaft can be inserted and rotated, and a base portion supporting the shaft are each made of a single crystal material. .
とを特徴とする請求項（１）記載のマイクロメカニカル
部品。(2) The micromechanical component according to claim (1), wherein an optical reflecting mirror is formed in a part of the rotating part.
特徴とする請求項（１）記載のマイクロメカニカル部品
。(3) The micromechanical component according to claim (1), wherein a diffraction grating is formed in a part of the rotating part.
とする請求項（１）記載のマイクロメカニカル部品。(4) The micromechanical component according to claim (1), wherein a gear is formed in a part of the rotating part.
分を形成し、該柱状部分を埋め込むと共に前記基体部を
覆うように前記基体部と異なる材質からなる単結晶材質
の除去層をエピタキシャル成長し、さらに該除去層上に
前記軸が挿入されて前記軸を中心として回転する回転部
となる層を前記基体部と同質の単結晶材質でエピタキシ
ャル成長した後、前記除去層のみを選択的に除去して前
記基体部と前記回転部とを相対回転自在に分離すること
を特徴とするマイクロメカニカル部品の製造方法。(5) A columnar portion serving as an axis is formed on the surface of a single crystal substrate serving as a base portion, and a removal layer of a single crystal material made of a material different from that of the base portion is provided so as to embed the columnar portion and cover the base portion. After epitaxially growing, and further epitaxially growing a layer that becomes a rotating part in which the shaft is inserted on the removal layer and rotates around the axis using a single crystal material of the same quality as the base part, only the removal layer is selectively grown. A method for manufacturing a micromechanical component, characterized in that the base portion and the rotating portion are separated so as to be relatively rotatable by removal.
層の表面をマスクし、軸となる柱状部分の上面部が露出
されるように該マスクを柱状部分の外径寸法となる大き
さで除去し、該露出した箇所に基体部と同質の単結晶材
質を前記マスクの上面にせり出すまでエピタキシャル成
長してから、除去層のみを選択的に除くことを特徴とす
る請求項（５）記載のマイクロメカニカル部品の製造方
法。(6) After epitaxially growing the layer that will become the rotating part, mask the surface of the layer and remove the mask to a size that corresponds to the outer diameter of the columnar part so that the upper surface of the columnar part that will become the axis is exposed. The micromechanical device according to claim 5, wherein a single crystal material having the same quality as the base portion is epitaxially grown on the exposed portion until it protrudes above the upper surface of the mask, and then only the removal layer is selectively removed. How the parts are manufactured.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17733590A JPH0465393A (en) | 1990-07-06 | 1990-07-06 | Macromechanical parts and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17733590A JPH0465393A (en) | 1990-07-06 | 1990-07-06 | Macromechanical parts and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0465393A true JPH0465393A (en) | 1992-03-02 |
Family
ID=16029176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17733590A Pending JPH0465393A (en) | 1990-07-06 | 1990-07-06 | Macromechanical parts and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0465393A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012831A1 (en) * | 1993-11-02 | 1995-05-11 | Norbert Schwesinger | Device for deflecting optical beams |
-
1990
- 1990-07-06 JP JP17733590A patent/JPH0465393A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1995012831A1 (en) * | 1993-11-02 | 1995-05-11 | Norbert Schwesinger | Device for deflecting optical beams |
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