JPH0455854A - Photomask device and pattern forming method using this device - Google Patents

Abstract

PURPOSE:To prevent the formation of unnecessary dark parts and to easily form open loop patterns and isolated patterns, etc., by providing a 3rd light transmission region which allows the transmission of light with the intermediate phase of the phases of the transmitted light of 1st and 2nd light for forming dark parts varying in the phases of the transmitted light by about 180 deg. in the parts where the dark parts of the joint parts of these light transmission regions are not required. CONSTITUTION:The 3rd light transmission region 11C which allows the transmission of the light with the intermediate phase of the phases of the transmitted light of the adjacent 1st and 2nd light transmission regions 11A, 11B having 180 deg. phase difference of the transmitted light is provided at the boundary of these light transmission regions, by which the light intensity of this boundary part is raised. The 3rd light transmission region 11C has the effect of less releaving the transfer of the phases of the light in the boundary part of the 1st and 2nd light transmission regions 11A, 11B and has the effect of weakening the interference of the two light beams having 180 deg. phase difference. The formation of the unnecessary dark part below the boundary part of the adjacent 1st and 2nd light transmission regions is prevented in this way and the branch patterns and open loop patterns are easily formed by a phase shift method.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a photomask device used in lithography, etc. in the manufacture of semiconductor devices having fine patterns of half a micron or less, and a pattern forming method using the same. It is.

[Conventional technology]

The phase shift method is a method to improve the resolution limit in the reduction projection exposure method, as proposed by IE Transactions on Electron Technology.
, HD-29, NO, 12, December 1982 (IEE
E Tl? ANSACTIONSON ELECT
I? ON DEVICES, VOL.

ED-29,NO,12,DECEMBE)l 198
2) is proposed. According to this phase shift method,
The resolution limit can be improved by several steps compared to an exposure method using a normal transmission type photomask device. Recently, an auxiliary phase shift method using an auxiliary pattern has been proposed, for example, in 1988 Autumn Applied Physics Conference 4a-7 Terasawa et al., 19
89 TEEE CH2637-7/8910000-
It has been announced as 0057 etc.

FIG. 5 fal shows a plan view of a photomask device using the phase shift method, in which 41 is a light transmitting area on a transparent quartz plate;
2 is a transmitted light blocking region formed by applying chromium or the like on a quartz plate; 43 is a phase conversion shifter that changes the phase of transmitted light by 180 degrees; The phase of the light transmitted through the light transmission region 41A of the part and the phase of the light transmitted through the light transmission region 41B of the part of the phase conversion shifter 43 are different by 180 degrees.
The solid line in Figure 6, which shows the light intensity distribution diagram of the transmitted light of the photomask device, indicates the limit light intensity for pattern formation,
The same applies to subsequent simulation results.

In the photomask device using the conventional phase shift method configured as described above, the C1C2vA of fat in FIG.
In the part indicated by , a normal light transmission area 41A (area without phase conversion shifter 43) and a light transmission area 41B (area with phase conversion shifter 43) where the phase of transmitted light changes by 180 degrees.
A transmitted light blocking region 42 exists between the two. As a result, the contrast of the transmitted light on the 01-02 line of FIG.

In a normal transmission type photomask device without a phase conversion shifter, when the width of the transmitted light blocking area becomes narrow, the i3 transmitted light below the transmitted light blocking area is The light intensity does not become completely O. In other words, the light is i! The part that treats you and the part that blocks you,
The difference in intensity of light decreases (in other words, the contrast of light deteriorates), making it impossible to form a pattern according to the photomask.

However, as in the photomask device shown in FIG. In the region 42, two transmitted lights whose phases differ by 180 degrees l6 interfere with each other.

Since these diffracted lights have the effect of canceling each other out, the light intensity of the transmitted light below the transmitted light blocking region 42 becomes approximately 0. Therefore, even if the width of the transmitted light blocking region 42 is narrow, the contrast of light is improved and it becomes possible to form a finer pattern. In other words, the two light i3-excess regions 41A and 41B, which are joined across the narrow transmitted light blocking region 42 and whose transmitted light phase paths differ by 180, have the effect of forming a dark region below the joint. It turns out.

FIG. 7 ta+ shows a plan view of a photomask device using an example of the auxiliary phase shift method, where 51 is a light transmitting area on a transparent quartz plate, and 52 is a light transmitting area formed by coating chromium or the like on the quartz plate. The light blocking area 53 is a phase conversion shifter that changes the phase of transmitted light by 180 degrees, and is formed in a region of the light transmission area 51 that is in contact with the transmitted light blocking area 52. The phase of the light transmitted through the light transmission region 51A in the portion without the phase conversion shifter 53 and the phase of the light transmitted in the light transmission region 51B in the portion with the phase conversion shifter 53 are different by 180 degrees.
6. FIG. 7 Cb) shows a distribution diagram of the amplitude of transmitted light of the photomask device of FIG. 7 (al), and FIG. 7 (C1) shows a light intensity distribution diagram of transmitted light.

In the photomask device shown in FIG.
As shown in bl, the amplitude T of the transmitted light passing through the light transmitting region 51A is
1 has a distribution that tapers off gently.

On the other hand, a light transmission region 51 in which the phase of transmitted light changes by 180 degrees
The amplitude T2 of the light passing through B has small peaks at both sides of the amplitude T1 of the light passing through the light transmitting region 51A in the opposite direction to the amplitude T1 of the light passing through the light transmitting region 51A. When the two are added, the base of the amplitude T1 is canceled out by the amplitude T2 and disappears, resulting in a steep amplitude T3. Therefore, a light intensity distribution as shown in FIG. 7 tc+ with a large intensity difference between the light transmitting region 51 and the transmitted light blocking region 52 is obtained.

FIG. 8 fat shows a conventional transmission type photomask device consisting of only a light transmission region. In Fig. 8 fal, 91 is the light i3 transmission area (entire area) on the transparent quartz plate, 92
is a phase conversion shifter formed on a quartz plate to change the phase of transmitted light by 180 degrees, and the phase of the transmitted light of the light transmission area 91A in the part of the light transmission area 91 where the phase conversion shifter 92 is not provided and the phase conversion shifter Light transmission area 91 in a certain part of 92
The phase of the transmitted light of B is different by 180 degrees l6 In this case, the phase of the transmitted light is different by 180 degrees l6 By directly joining the light transmitting regions, a dark part is formed below the joint, and the transmitted light The two light transmitting regions with a 180 degree difference in light phase function to form a dark area.

In the photomask device shown in FIG. 8(al), the light intensity is O in the entire periphery of the phase conversion shifter 92 that changes the phase of transmitted light by 180 degrees, so the one-stroke pattern along the periphery of the phase conversion shifter 92 is FIG. 9 fat shows the simulation result of the relative light intensity of the transmitted light in the area surrounded by the dashed line 99A of the image transferred by the photomask device shown in FIG. 8 (al). The pattern 100 is formed in a loop shape along the periphery of the phase conversion softer 92.

[Problem to be solved by the invention]

However, the conventional phase shift method described above is
As shown in a+, the phase of the transmitted light is set to 180 in the light transmitting region 41 (the part where there is no transmitted light blocking region such as chrome).
Boundary of the phase conversion shifter 43 that changes the degree (Fig. 5 + al
K) exists, that is, when there is a region where the two light transmitting regions 41A and 41B are directly joined, that is, the phase of the transmitted light differs by 180 degrees, an unnecessary dark region is formed below the joint, and the transmitted light is A resist pattern is formed as if there were a blocking area. That is, in the cross section there (line -D2 in Figure 5), the phases of the two transmitted lights that have a phase difference of 180 degrees at the boundary cancel each other out,
Its amplitude becomes O. Since the light intensity is expressed as the square of the amplitude, it becomes approximately 0 at the boundary as described above. Figure 5 ('
Also in the simulation result of the light intensity of the transmitted light shown in b), the light intensity is 0 at the location corresponding to the boundary K, as if there is a transmitted light blocking area there.

Furthermore, a cross-sectional view of the photomask device taken along the line -D2 in FIG. 5 is shown in FIG. 6 (al), and a light intensity distribution diagram of the transmitted light is shown in FIG. A cross-sectional view of the resist pattern is shown in FIG. 6 (C1).
8, resist pattern 4 is placed at the location corresponding to boundary K.
8A will be formed.

This becomes a mask in the next etching process, and an undesirable situation occurs in which patterns that should not originally be connected are connected.

As described above, the conventional phase shift method can be applied in a closed loop where the light transmission region has a branch pattern and boundaries are difficult to exist, but in an open loop where such boundaries exist, the phase shift method is difficult to apply. The patterns are connected at the boundaries of the , making adaptation impossible.

Considering that the currently mainstream high-resolution resist is a positive resist, and that the patterns that require further miniaturization are open loops such as wiring, the patterns to which phase conversion thick can be applied are extremely limited. However, there was a problem that

Furthermore, the auxiliary phase shift method described above is not limited by patterns, which is a problem with the phase shift method. However, the effect is less than that of the phase shift method, and it is unlikely that it will become a mainstream technology, according to NIKKEI MIC.
I? 0DEVICE > May 1990 issue P7475
is discussed.

On the other hand, the conventional transmission type photomask device shown in FIG. 8(al) has the disadvantage that only a single stroke pattern along the periphery of the phase conversion shifter 92 can be obtained, and an isolated pattern cannot be obtained.

An object of the present invention is to provide a photomask device that can prevent the formation of unnecessary dark areas and easily form open-loop patterns, isolated patterns, etc. when forming patterns using a phase conversion shifter, and a photomask device using the same. An object of the present invention is to provide a pattern forming method.

[Means to solve the problem]

The photomask device according to claim (1) includes a first and a second mask for forming a dark area whose transmitted light has a phase difference of about 180 from each other.
The light transmitting regions of the first and second light transmitting regions are joined directly or through a transmitted light blocking region, and the transmitted light of the first and second light transmitting regions is connected to a portion where a dark region is not required to be formed at the junction of the first and second light transmitting regions. A third light transmitting region is interposed that transmits light at an intermediate phase.

The pattern forming method according to claim (2) is provided in claim fi+
The photomask device described above is placed on a resist formed on a substrate, and exposure light is irradiated onto the resist through first, second, and third light transmission regions of the photomask device.

[For production]

In the photomask device according to claim fil, the first and second light transmitting regions for forming a dark region, in which the phases of transmitted light differ from each other by approximately 180 degrees, are joined directly or through a transmitted light blocking region. The light that passes through the light transmitting region of
The light transmitted through the light i3 transmitting region weakens each other, thereby forming a dark region below the periphery of the junction of the first and second light transmitting regions that are directly joined or joined via the transmitted light blocking region. .

However, when the first and second light transmitting regions are formed on a flat surface, the first and second light transmitting regions may be joined to portions where dark portions are not required to be formed. In such a part where the formation of a dark part is unnecessary, the first light transmitting region is
By interposing a third light transmitting region that transmits light at a phase intermediate to that of the light transmitted through the second light transmitting region, the canceling effect of light is suppressed, and the formation of unnecessary dark areas is prevented. Ru.

In other words, in this photomask device, light is transmitted through the boundary between adjacent first and second light transmitting regions, which have a phase difference of 180 degrees, with a phase that is intermediate between the phases of the transmitted light of both light transmitting regions. By providing the third light transmitting region, the light intensity at the boundary portion is increased. The third light transmitting region has the function of slowing down the transition of the phase of light at the boundary between the first and second light transmitting regions, and weakens the interference between two lights having a phase difference of 180 degrees. It has an effect.

This prevents the formation of unnecessary dark areas below the boundary between the adjacent first and second light transmitting regions, which have a phase difference of 180 degrees between the transmitted light, and creates branch patterns and open loop patterns using the phase shift method. It can be easily formed.

In the pattern forming method according to claim (2), the first . Since the exposure light is directed onto the resist through the second and third light transmitting regions, the resist can be left in a branched pattern or an open loop pattern.

〔Example〕

FIG. 1ial shows a plan view of a photomask device using a phase shift method according to a first embodiment of the present invention, in which (1) is a light transmitting area on a transparent quartz plate, and I2 is a layer of chromium etc. on the quartz plate. The transmitted light blocking area formed by coating, I3 is a phase conversion shifter that changes the phase of transmitted light by 180 degrees, and 14 is a phase conversion shifter that changes the phase of transmitted light by 90 degrees. Phase conversion shifter 13. The phase of the transmitted light of the part without phase conversion shifter 14 (1) A and the phase of the transmitted light of phase conversion shifter] The phase of the transmitted light of the part of 3 (1) B has a 180 degree variation, Phase and phase conversion of transmitted light in light transmitting region (1)A The phase of transmitted light in light transmitting region (1)C in the portion where the shifter 14 is located is shifted by 90 degrees, and the phase of transmitted light in light transmitting region (1)C is changed by 90 degrees. A light transmission area (1
) The phase of the transmitted light of B also changes by 90 degrees.

FIG. 1) shows a light intensity distribution diagram of transmitted light of the photomask device of FIG. ta) based on a simulation.

The operation of the photomask apparatus of this embodiment configured as described above will be explained below.

Phase conversion shifter 13 that changes the phase of transmitted light by 180 degrees
phase conversion shifter 14 that changes the phase of transmitted light by 90 degrees at the boundary when the boundary exists in the light transmission region (1).
Place. Light transmission area (1) 90 for transmitted light of A
Phase conversion shifter 14 that transmits light with a phase difference of degrees
plays the role of a buffer when the phase of transmitted light changes from 180 degrees to 0 degrees from light transmission area (1) B to light transmission area (1) A, and the light intensity at the boundary becomes O. It has the effect of avoiding. In other words, the 180 degree shifted phase transmission region (1)B and the 90 degree shifted phase light i3jM region (1)
The light intensity does not become 0 at the boundary with C, and similarly, the light intensity does not become 0 at the boundary between the 90 degree light transmission area (1) C and the 0 phase shift light transmission area (1) A. This prevents the formation of an unnecessary dark area below the junction of the light transmitting regions (1) A and IIB.

This phenomenon can be understood by considering a complex plane in which the real axis is the X axis and the imaginary axis is the Y axis. If we consider the light intensity as a vector with length 1, it is easy to understand that when we add up the vectors with different phase shifts by 180, the vector becomes 0 (that is, disappears). This is a phenomenon when the light intensity is 0.

However, if you add up vectors whose phases differ by 90 degrees, you will get a vector tilted by 45 degrees.

In other words, if a vector has a length, its light intensity will not be zero. Also, the vector that was around 45 degrees 1 and 13535
Adding the degree-inclination vectors creates a vector on the imaginary axis whose real component is O. However, since the light intensity is expressed as an absolute value raised to the second power, the light intensity in this part does not become 0 either. Therefore, when a component with a different phase enters between 180 degrees and 0 degrees, the light intensity at the boundary becomes greater than 0.

Therefore, when exposure light enters this photomask device,
On the lines A and -A2 of FIG. Therefore, as described in the conventional example, the junction of the light transmitting regions (1)A(1)B with a phase shift of about 180 degrees acts to create a dark area.

Moreover, on the B, -82 line of FIG.
The phase of the transmitted light changes stepwise from 0 degrees, 90 degrees, and 180 degrees.

Therefore, as shown in FIG. 1(b), a light intensity distribution according to the mask is obtained.

Next, a cross-sectional view of the photomask device on line B and -82 in FIG. 1(a) is shown in FIG. , a cross-sectional view of the resist pattern formed thereby is shown in the same figure fc.
Shown in l. By providing the phase conversion shifter 14 that changes the phase of transmitted light by 90 degrees, the unnecessary resist pattern that appears in the conventional example does not appear, and only the resist pattern 18 that matches the mask is formed.

As described above, according to this embodiment, the phase of the transmitted light is adjusted to 9
By providing the phase conversion shifter 14 that changes the phase by 0 degrees at the boundary of the phase conversion shifter 13 that changes the phase by 180 degrees, it is possible to easily prevent the formation of unnecessary dark areas due to the joining of light transmitting regions whose phases differ by 180 degrees. It is possible to create masks arbitrarily, even in open-loop patterns that include branches.

Furthermore, in the above example, one phase conversion shifter 14 with a 90-degree shift phase is sandwiched between them, but if we try to make the light intensity distribution at the boundary closer to that of the i3 over-type mask, the 180-degree light A large number of phase conversion shifters having different phases may be arranged stepwise between the transmission region and the light transmission region at 0 degrees.

FIG. 3 shows a plan view of a photomask device using a phase shift method according to a second embodiment of the present invention configured as described above, in which 21 is a light transmitting area on a transparent quartz plate, and 22 is a light transmitting area on a quartz plate. Transmitted light blocking area formed by coating chromium etc. on 23
is a phase conversion shifter that changes the phase of transmitted light by 180 degrees,
25 is a phase conversion shifter that changes the phase of transmitted light by 120 degrees; 26 is a phase conversion shifter that changes the phase of transmitted light by 60 degrees;
．． 25. Phase of the transmitted light in the light transmitting region 21A where there is no 26 and phase conversion of the light transmitting region 21 where the shifter 23 is present
The phase of transmitted light of B is 180 degrees different l9, light transmission area 21A
The phase of the transmitted light and the phase conversion shifter 26 of the light M
A? The phase of the transmitted light in the iJf region 21C is shifted by 60 degrees, and the phase of the transmitted light in the light i3 passing region 2IC and the phase of the i3 passing part of the light transmitting region 21D in the part where the phase conversion shifter 25 is also shifted by 60 degrees, and the light The phase of the light transmitted through the transmission region 21D and the phase of the light transmitted through the light transmission region 21B in the portion where the phase conversion shifter 23 is located also differ by 60 degrees.

As mentioned above, the phase conversion shifter 26 changes the phase of transmitted light by 60 degrees, and the phase conversion shifter 25 changes the phase of transmitted light by 120 degrees.
By providing this at the boundary of the phase conversion shifter 23 that shifts the phase by about 180 degrees in stages, a smoother light intensity distribution according to the mask can be obtained.

FIG. 4 shows a plan view of a photomask device using a phase shift method according to a third embodiment of the present invention, in which 31 is a light transmitting area on a transparent quartz plate, and 32 is a light transmitting area on a quartz plate coated with chromium or the like. The transmitted light blocking region 33 changes the phase of the transmitted light by 90 degrees, and 34 changes the phase of the transmitted light by 90 degrees.
It is a phase conversion chic that changes by 0 degrees, and the optical i3 excess area 3
1, the light transmission region 3 of the part where the phase conversion shifter 34 is located
The phase of the i3 transmitted light of 1A and the phase of the 3 transmitted light of the light transmission area 31B in the part without the thick 33.34 are changed by 90 degrees, and the phase of the transmitted light of the light transmission area 31B and the phase of the phase conversion shifter 33 The phase of the transmitted light in a certain portion of the light transmitting region 31C is 9
0 degree change, the phase of the transmitted light in the light transmission area 31A and the phase of the i3 transmitted light in the light transmission area 31C are 180 degrees different l6° In this embodiment, a phase conversion shifter that changes the phase by 180 degrees is not used. Two types of phase conversion filters, a phase conversion shifter that changes the phase by 90 degrees and a phase conversion softer that changes the phase by 190 degrees, improve the contrast and convert the transmitted light (0 phase shift) without a phase conversion shifter into a sofa. I am using it.

It goes without saying that the concept of placing the buffer at the boundary where the phase difference is 180 degrees as in this example is important, and how the phase conversion shifter is placed is not important.

In addition, 1. Second. In a third embodiment, 90 degrees, 1
The 80 degree, -90 degree, etc. phase conversion shifter may be formed on the chrome or may be formed by etching under the chromium constituting the transmitted light blocking region. Additionally, phase conversion shifters of 180 degrees, 90 degrees, and 270 degrees may be made with different refractive indexes, and in this way, the heights of phase conversion shifters with different amounts of phase change can be made the same. This makes it possible to reduce the level difference on the surface of the photomask. As described above, any method may be used to create two or more different phase conversion chics on the reticle.

FIG. 81D (bl shows a plan view of a photomask device according to the fourth embodiment of the present invention. FIG. 8D (bl shows the configuration of a photomask device consisting only of light-transmitting regions). In FIG. 8, 93 is a phase conversion shifter that changes the phase of transmitted light by 90 degrees, and is disposed at the edge of the phase conversion shifter 92.

Light transmission area 91 in the part without phase conversion shifters 92 and 93
A (7) Phase and phase conversion of transmitted light Light transmission area 91 in the part with shifter 92 B17) Phase of transmitted light differs by 180 degrees l
6. The phase of the i3 passing light in the light transmitting region 91A and the phase of the y filling in the light transmitting region 91C in the part where the shifter 93 is located are changed by 90 degrees, and the phase of the transmitted light in the light transmitting region 91C and the light transmission The phase of the transmitted light in the region 91B is also changed by 90 degrees.

The operation of the photomask apparatus of this embodiment configured as described above will be explained below.

Phase conversion shifter 92 that changes the phase of transmitted light by 180 degrees
When a boundary exists in the light transmission region 91, a phase conversion shifter 93 that changes the phase of transmitted light by 90 degrees is arranged at the boundary. Light transmission area 91A.

A phase conversion shifter 93 that transmits light having a phase difference of 90 degrees with respect to the transmitted light of 91B changes the transmitted light from 180 degrees to 0.
It plays the role of a buffer when the phase changes, and the light intensity becomes O
It has the effect of preventing

In this embodiment, the phase conversion shifter 93 prevents the formation of a pattern (dark area) at the boundary between the phase conversion shifter 92 and the phase conversion shifter 93.

9) shows the simulation results of the relative light intensity distribution in the region surrounded by the dashed line 99B of the image transferred by the photomask device shown in 3 in FIG. 8. According to this figure, it can be seen that the pattern 101 and the pattern 102 are formed independently.

〔Effect of the invention〕

According to this invention, there is a 180 degree difference in the phase of transmitted light.
Since a third light transmitting region that transmits light at an intermediate phase between the transmitted light and the second light transmitting region is interposed between the second light transmitting region and the third light transmitting region, there is no need to join the first and second light transmitting regions. The formation of dark areas can be prevented, and the phase shift mask method can be applied to any pattern. For example, using conventional g-line and i-line as the exposure light source, 64M
Patterning of 0.3 to 0.4 pm rule for bit-2 bit DRAM etc. is possible. Furthermore, KrF excimer laser (248 nm) enables patterning with a 0.2 μm rule, further extending the limits of photolithography, and has great practical effects.

[Brief explanation of the drawing]

Figure 1 (al is a plan view of the photomask device according to the first embodiment of the present invention, Figure 1 (bl is a light intensity distribution diagram of the transmitted light of the photomask device of Figure 1 + 81 due to SOMULAI SOON, and Figure 2 is fat is a cross-sectional view of the mask taken along line B, -82 in Figure 1 (al), Figure 2 fbl is a light intensity distribution diagram of the transmitted light along line ta+0B1B2 in Figure 1, and Figure 2 fcl is a cross-sectional view of the mask taken along line B and -82 in Figure 1 (a).
FIG. 3 is a plan view of the photomask device according to the second embodiment of the present invention, and FIG. FIG. 5 is a plan view of a photomask device according to a third embodiment of the invention (al is a plan view of a conventional example of a photomask device;
Figure 5 (in Figure 5) is a light intensity distribution diagram based on a simulation of the transmitted light of the photomask device in Figure 5 (al);
is a cross-sectional view of the photomask along the D1D2 line of al.
Figure 6(b) is a light intensity distribution diagram of i3 transmitted light on the -D2 line for the tal paste in Figure 5, and tel in Figure 6 is for the resist pattern paste obtained by exposure through the photomask device of Figure 5 ta+. , a sectional view taken along the line -D2, and FIG. 7 (al is a plan view of a conventional example of a photomask device using the auxiliary phase shift method;
Figure 7 (bl is an amplitude distribution diagram of light passing through the photomask device in Figure 7 (al), Figure 7 fcl is a diagram of its light intensity distribution, and Figure 1 +81 is another conventional example of a photomask device. FIG. 8 fbl is a plan view of a photomask apparatus according to a fourth embodiment of the present invention, and FIG. 9 (al is a plan view of FIG. 8 (
A light intensity distribution diagram showing the simulation results of transfer light by the photomask device in al.
It is a light intensity distribution diagram showing simulation results of transfer light by the photomask device shown in Figure (bl). (1) (1) A to IIC, 21, 21A to 21D, 31
゜31A to 31C, 91, 91A to 91C...Light transmission area, 12.22.32...i3 Excessive light blocking area, 13
, 1423.25.26, 33.34... Phase conversion sick (1) C...t3 Yusei Toyu (1) Figure 1 (a) (b) Figure 1 (b) Figure 1 ( b) Map area lj') tv's area C

Claims (2)

[Claims] (1) The first and second light transmitting regions for forming a dark area, in which the phases of transmitted light are different from each other by approximately 180 degrees, are joined directly or through a transmitted light blocking region, and the first and second light transmitting regions are The first and second
A photomask device including a third light transmitting region that transmits light at a phase intermediate between the phase of the light transmitted through the light transmitting region. (2) The photomask device according to claim (1) is installed on a resist formed on a substrate, and exposure light is directed onto the resist through the first, second, and third light transmitting regions of the photomask device. A pattern forming method characterized by irradiating.