JPH0448645U - - Google Patents

Info

Publication number
JPH0448645U
JPH0448645U JP9175490U JP9175490U JPH0448645U JP H0448645 U JPH0448645 U JP H0448645U JP 9175490 U JP9175490 U JP 9175490U JP 9175490 U JP9175490 U JP 9175490U JP H0448645 U JPH0448645 U JP H0448645U
Authority
JP
Japan
Prior art keywords
conductivity type
diac
impurity layer
highly concentrated
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9175490U
Other languages
English (en)
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9175490U priority Critical patent/JPH0448645U/ja
Publication of JPH0448645U publication Critical patent/JPH0448645U/ja
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thyristors (AREA)
JP9175490U 1990-08-31 1990-08-31 Pending JPH0448645U (US20030220297A1-20031127-C00074.png)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9175490U JPH0448645U (US20030220297A1-20031127-C00074.png) 1990-08-31 1990-08-31

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9175490U JPH0448645U (US20030220297A1-20031127-C00074.png) 1990-08-31 1990-08-31

Publications (1)

Publication Number Publication Date
JPH0448645U true JPH0448645U (US20030220297A1-20031127-C00074.png) 1992-04-24

Family

ID=31827664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9175490U Pending JPH0448645U (US20030220297A1-20031127-C00074.png) 1990-08-31 1990-08-31

Country Status (1)

Country Link
JP (1) JPH0448645U (US20030220297A1-20031127-C00074.png)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63102378A (ja) * 1986-10-20 1988-05-07 Matsushita Electronics Corp 静電破壊防止用ダイオ−ド
JPS6423577A (en) * 1987-07-20 1989-01-26 Matsushita Electronics Corp Diode for prevention of electrostatic breakdown
JPH0220354B2 (US20030220297A1-20031127-C00074.png) * 1985-06-13 1990-05-09 Kei Esu Emu Fuasuningu Shisutemusu Inc
JPH02134873A (ja) * 1988-11-15 1990-05-23 Nec Corp トリガダイオード
JPH03161976A (ja) * 1989-11-21 1991-07-11 Nec Kansai Ltd プレーナ型ダイアック及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0220354B2 (US20030220297A1-20031127-C00074.png) * 1985-06-13 1990-05-09 Kei Esu Emu Fuasuningu Shisutemusu Inc
JPS63102378A (ja) * 1986-10-20 1988-05-07 Matsushita Electronics Corp 静電破壊防止用ダイオ−ド
JPS6423577A (en) * 1987-07-20 1989-01-26 Matsushita Electronics Corp Diode for prevention of electrostatic breakdown
JPH02134873A (ja) * 1988-11-15 1990-05-23 Nec Corp トリガダイオード
JPH03161976A (ja) * 1989-11-21 1991-07-11 Nec Kansai Ltd プレーナ型ダイアック及びその製造方法

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