JPH0440179A - Solid image pickup element - Google Patents

Solid image pickup element

Info

Publication number
JPH0440179A
JPH0440179A JP2147847A JP14784790A JPH0440179A JP H0440179 A JPH0440179 A JP H0440179A JP 2147847 A JP2147847 A JP 2147847A JP 14784790 A JP14784790 A JP 14784790A JP H0440179 A JPH0440179 A JP H0440179A
Authority
JP
Japan
Prior art keywords
light receiving
transfer section
photodetectors
register
charge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2147847A
Other languages
Japanese (ja)
Inventor
Toshibumi Nishida
俊文 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP2147847A priority Critical patent/JPH0440179A/en
Publication of JPH0440179A publication Critical patent/JPH0440179A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To suppress the enlargement of an area due to the increase of photodetectors and to realize a solid image pickup element which has high resolution and occupies an small area by providing the photodetectors at the right and the left sides of one vertical transferring part, and storing and transferring a charge stored in the two photodetectors by the one vertical transferring part. CONSTITUTION:The charge stored in a photodetector 1 is stored in a register 4 of a vertical transferring part 3 by a read-out gate 6. Next, the charge stored in the register 4 is transferred to a register 5, and after that, the charge stored in a photodetector 2 is stored in the register 4 by a read-out gate 7. Then, the charge of the photodetectors 1 and 2 are transferred one by one to the direction of a horizontal transferring part 8, and outputted through an amplifier 9. Then, the charge of the photodetectors 1 and 2 are synthesized at the outside of the elements. Thus, the charge from the two photodetectors 1 and 2 are stored and transferred by the one vertical transferring part 3.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、固体撮像素子に関するものである。[Detailed description of the invention] Industrial applications The present invention relates to a solid-state image sensor.

従来の技術 インターライン転送型ＣＣＤ撮像素子は第２図に示すよ
うに、受光部１１の画素か行列に配列され、その各行列
ごとに受光部１１に蓄積された電荷は読み出しゲート１
２を介して並列に垂直転送部１３に転送され、各垂直転
送部１３の一端より直列に転送された電荷は、水平転送
部１４に並列に転送され、水平転送部１４の電荷は直列
に増幅器１５を介して出力端子１６に出力される。As shown in FIG. 2, in the conventional interline transfer type CCD image pickup device, the pixels of the light receiving section 11 are arranged in rows and columns, and the charges accumulated in the light receiving section 11 for each row are read out through the readout gate 1.
The charges transferred in parallel to the vertical transfer section 13 via the terminals 2 and transferred in series from one end of each vertical transfer section 13 are transferred in parallel to the horizontal transfer section 14, and the charges in the horizontal transfer section 14 are transferred in series to the amplifier. It is output to the output terminal 16 via 15.

一方、この種の固体撮像素子の需要が増すにつれ、より
画素数は増大し、高分解能化および小型化が要望されて
いる。On the other hand, as the demand for this type of solid-state imaging device increases, the number of pixels increases, and higher resolution and smaller size are desired.

発明が解決しようとする課題 しかしながら上記の構成では、受光部１１と垂直転送部
１３が１対１の組であるため、受光部１１の増大に伴い
、垂直転送部１３も必要となり、面積か大きくなるとい
う欠点を有していた。Problems to be Solved by the Invention However, in the above configuration, since the light receiving section 11 and the vertical transfer section 13 are in a one-to-one pair, as the light receiving section 11 increases, the vertical transfer section 13 is also required, which increases the area. It had the disadvantage of being

本発明は上記従来の問題点を解決するもので、受光部１
１の増大に対し、可能なかぎり垂直転送部１１の増加を
少なくし、高分解能で小面積の固体撮像素子を提供する
ことを目的とする。The present invention solves the above-mentioned problems of the conventional art.
It is an object of the present invention to provide a solid-state imaging device with high resolution and a small area by minimizing the increase in the number of vertical transfer sections 11 as much as possible.

課題を解決するための手段 この目的を達成するために本発明の固体撮像素子は、光
信号を受けて電気信号に変換する受光部の各画素列から
発生する電荷を蓄積し垂直方向に転送する垂直転送部−
つに対し、前記各画素列を左右に設け、この左右の画素
列を順次選択し、前記垂直転送部に電荷を蓄積転送する
構成を有している。Means for Solving the Problems To achieve this object, the solid-state imaging device of the present invention accumulates and vertically transfers charges generated from each pixel column of a light receiving section that receives optical signals and converts them into electrical signals. Vertical transfer section
On the other hand, the pixel columns are provided on the left and right, and the pixel columns on the left and right are sequentially selected to accumulate and transfer charges to the vertical transfer section.

作用 この構成によって、従来、画素列と回数列必要とされて
いた垂直転送部が半分で済み、画素数の増大に対しても
小型化が可能となる。Effect: With this configuration, the number of vertical transfer sections that were conventionally required for pixel columns and number columns can be halved, and miniaturization is possible even when the number of pixels increases.

実施例 以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.

第１図はこの発明の実施例の構成図である。第１図にお
いて、１，２は光電変換機能を有する受光部、３は垂直
転送部であり、４．５は受光部単位あたり二段のレジス
タ、６，７は読み出しゲート、８は水平転送部、９は増
幅器、１０は出力端子である。FIG. 1 is a block diagram of an embodiment of the present invention. In Fig. 1, 1 and 2 are light receiving sections with a photoelectric conversion function, 3 is a vertical transfer section, 4.5 is a two-stage register per light receiving section, 6 and 7 are readout gates, and 8 is a horizontal transfer section. , 9 is an amplifier, and 10 is an output terminal.

以上のように構成された固体撮像素子について、以下そ
の動作を説明する。The operation of the solid-state image sensor configured as described above will be described below.

受光部１に蓄積された電荷は、読み出しゲート６により
、垂直転送部３のレジスタ４に蓄積される。次にレジス
タ４に蓄積した電荷をレジスタ５に転送し、転送終了後
、受光部２に蓄積された電荷を読み出しゲート７により
、レジスタ４に蓄積し、水平転送部８方向へ順次送られ
、増幅器１５を通じて出力される。そして素子外部にて
受光部１．２の電荷の合成を行なう。The charges accumulated in the light receiving section 1 are accumulated in the register 4 of the vertical transfer section 3 by the readout gate 6. Next, the charges accumulated in the register 4 are transferred to the register 5, and after the transfer is completed, the charges accumulated in the light receiving section 2 are read out by the gate 7, accumulated in the register 4, and sequentially sent to the horizontal transfer section 8, and then sent to the amplifier. 15. Then, the charges in the light receiving section 1.2 are combined outside the element.

以上のように、１つの垂直転送部３に対し、その左右に
受光部１．２を設けることにより、２つの受光部１．２
からの電荷を１つの垂直転送部３で蓄積転送できる。As described above, by providing the light receiving sections 1.2 on the left and right sides of one vertical transfer section 3, the two light receiving sections 1.2
It is possible to accumulate and transfer charges from the vertical transfer section 3 in one vertical transfer section 3.

発明の効果 以上のように本発明は、１つの垂直転送部に対し、その
左右に受光部を設け、２つの受光部に蓄積された電荷を
１つの垂直転送部で蓄積転送を可能にすることにより、
受光部の増加による、面積の拡大を抑制でき、高分解能
でしかも小面積の固体撮像素子を実現できるものである
。Effects of the Invention As described above, the present invention provides light receiving sections on the left and right sides of one vertical transfer section, and allows the charges accumulated in the two light receiving sections to be stored and transferred in one vertical transfer section. According to
It is possible to suppress the increase in area due to an increase in the number of light receiving sections, and to realize a solid-state imaging device with high resolution and a small area.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図はこの発明の実施例における固体撮像素子の構成
図、第２図は従来のインターライン型固体撮像素子の構
成図である。 １．２・・・・・・受光部、３・・・・・・垂直転送部
、４，５・・・・・・Ｌ／レジスタ６，７・・・・・・
読み出しゲート、８・・・・・・水平転送部、９・・・
・・・増幅器、１ｏ・・・・・・出力端子。FIG. 1 is a block diagram of a solid-state image sensor according to an embodiment of the present invention, and FIG. 2 is a block diagram of a conventional interline type solid-state image sensor. 1.2... Light receiving section, 3... Vertical transfer section, 4, 5... L/register 6, 7...
Read gate, 8...Horizontal transfer section, 9...
...Amplifier, 1o...Output terminal.

Claims (1)

【特許請求の範囲】[Claims] 　光電変換機能を有する複数の受光部と、前記受光部の
信号電荷を垂直方向に転送する垂直転送部と、信号電荷
を水平方向に転送する水平転送部とからなる固体撮像素
子であって、前記受光部は前記垂直転送部の左右に配置
され、前記垂直転送部は、前記左右の光電変換素子を順
次選択し、信号電荷を転送する構成としたことを特徴と
する固体撮像素子。A solid-state imaging device comprising a plurality of light receiving sections having a photoelectric conversion function, a vertical transfer section that transfers signal charges of the light receiving sections in a vertical direction, and a horizontal transfer section that transfers signal charges in a horizontal direction, A solid-state imaging device, characterized in that a light receiving section is arranged on the left and right sides of the vertical transfer section, and the vertical transfer section sequentially selects the left and right photoelectric conversion elements and transfers signal charges.
JP2147847A 1990-06-06 1990-06-06 Solid image pickup element Pending JPH0440179A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2147847A JPH0440179A (en) 1990-06-06 1990-06-06 Solid image pickup element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2147847A JPH0440179A (en) 1990-06-06 1990-06-06 Solid image pickup element

Publications (1)

Publication Number Publication Date
JPH0440179A true JPH0440179A (en) 1992-02-10

Family

ID=15439604

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2147847A Pending JPH0440179A (en) 1990-06-06 1990-06-06 Solid image pickup element

Country Status (1)

Country Link
JP (1) JPH0440179A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196227A (en) * 2000-12-26 2002-07-12 Olympus Optical Co Ltd Ranging sensor and ranging device
US7643076B2 (en) 2005-03-30 2010-01-05 Denso Corporation Image scanning device having multiple CMOS element in matrix form
US8251684B2 (en) 2006-05-09 2012-08-28 Yanmar Co., Ltd. Trochoid pump providing axial regulation of a driving shaft

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002196227A (en) * 2000-12-26 2002-07-12 Olympus Optical Co Ltd Ranging sensor and ranging device
US7643076B2 (en) 2005-03-30 2010-01-05 Denso Corporation Image scanning device having multiple CMOS element in matrix form
US8251684B2 (en) 2006-05-09 2012-08-28 Yanmar Co., Ltd. Trochoid pump providing axial regulation of a driving shaft

Similar Documents

Publication Publication Date Title
US11798961B2 (en) Imaging device and imaging system
US10506188B2 (en) Solid-state imaging device
US8913168B2 (en) Solid-state image sensor and image sensing apparatus
KR20060122806A (en) Image sensor with charge binning
KR950010204B1 (en) Solid state image sensor
JP2008278453A (en) Image sensing apparatus and image capturing system
JPH0440179A (en) Solid image pickup element
JPH0689996A (en) Solid-state image pickup device
JPH02280474A (en) Ccd solid-state image pickup element
JPS63227281A (en) Solid-state image pickup device