JPH0438851A - Wafer carrier - Google Patents
Wafer carrierInfo
- Publication number
- JPH0438851A JPH0438851A JP2145721A JP14572190A JPH0438851A JP H0438851 A JPH0438851 A JP H0438851A JP 2145721 A JP2145721 A JP 2145721A JP 14572190 A JP14572190 A JP 14572190A JP H0438851 A JPH0438851 A JP H0438851A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- wafer
- wafer carrier
- groove
- introducing port
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007789 gas Substances 0.000 abstract description 37
- 239000007788 liquid Substances 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 5
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 238000003756 stirring Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 47
- 238000000034 method Methods 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000005587 bubbling Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008155 medical solution Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、薬液処理の最に使用する半導体基板であるウ
ェーハを複数枚収納するウェーハキャリアに関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer carrier that stores a plurality of wafers, which are semiconductor substrates used for chemical processing.
従来、この種のウェーハキャリアは図面には示さないが
、耐薬品性樹脂で成形された箱状の外郭体をもっている
。−面にウェーハが挿入される開口面を有し、その底部
には、複数のウェーハの外縁部が入り込む溝が並べて形
成されている。Although not shown in the drawings, conventionally, this type of wafer carrier has a box-shaped outer shell made of chemical-resistant resin. It has an opening surface into which the wafers are inserted on the - side, and grooves into which the outer edges of a plurality of wafers fit are formed in a row at the bottom thereof.
このウェーハキャリアを使用して、ウェーハを薬液処理
を行う場合は、まず、ウェーハキャリアに多数の処理す
べきウェーハを収納し、薬液が充たされた液槽にウェー
ハをウェーハキャリアと共に漬ける0次に液槽内にオゾ
ンあるいは窒素ガスを配管を介して導入し、バブリング
させることにより、薬液のウェーハに対する反応を促進
させ、処理を行っていた。When using this wafer carrier to process wafers with a chemical solution, first, a large number of wafers to be processed are stored in the wafer carrier, and the wafers and the wafer carrier are immersed in a liquid tank filled with a chemical solution. By introducing ozone or nitrogen gas into the liquid tank through piping and bubbling it, the reaction of the chemical liquid to the wafers is accelerated and the process is performed.
しかしながら、従来のウェーハキャリアは、開口面があ
ってし、ウェーハ間が狭く、さらに、導入されるガスの
出口がウェーハキャリアの外側にあるため、導入された
ガスによるバブルが収納されたウェーハに行届くことが
少ないので、ウェオーハ全面を均一に処理することが困
難である。琥な、この対策として、長時間かけて処理す
ると、ガスの浪費だけでなく、ウェーハの一部に過剰な
処理を行うことになり、半導体チップの生産歩留に多大
な損害をもたらす問題がある。However, conventional wafer carriers have open surfaces, the distance between the wafers is narrow, and the outlet of the introduced gas is located outside the wafer carrier, so bubbles caused by the introduced gas do not reach the stored wafers. Since the wafer is rarely reached, it is difficult to uniformly process the entire surface of the wafer. As a countermeasure for this problem, if the process is performed for a long time, not only will gas be wasted, but a portion of the wafer will be overprocessed, which will cause significant damage to the production yield of semiconductor chips. .
本発明の目的は、かかる欠点を解消し、ウェオーハ面を
均一に処理出来、かつガスの浪費をより少くするウェー
ハキャリアを提供することである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a wafer carrier that eliminates these drawbacks, allows uniform processing of the wafer surface, and reduces gas waste.
本発明のウェーハは、一方向にウェーハを挿入する開口
面を有し、この開口面の底部に前記ウェーハの外縁部が
はめ込まれる溝が複数形成される箱型形状のウェーハキ
ャリアにおいて、前記開口面側の外縁部面にガス導入口
が形成され、このガス導入口が前記溝内に形成された複
数のガス導出口と通じていることを特徴としている。The wafer of the present invention is a box-shaped wafer carrier having an opening surface into which the wafer is inserted in one direction, and a plurality of grooves into which the outer edge of the wafer is fitted in the bottom of the opening surface. A gas inlet is formed on the outer edge surface of the side, and the gas inlet is in communication with a plurality of gas outlet ports formed in the groove.
次に、本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第1図は、本発明の一実施例を示すウェーハキャリア及
び液槽の断面図である。このウェーハキャリアは、同図
に示すように、開口面側の外縁部面4aにガス導入口3
が形成され、このガス導入口3が、底部の溝面4bに多
数形成されたガス導出口5とガス経路4で通じているこ
とである。それ以外は従来と同じである。FIG. 1 is a sectional view of a wafer carrier and a liquid tank showing one embodiment of the present invention. As shown in the figure, this wafer carrier has a gas inlet 3 on the outer edge surface 4a on the opening surface side.
is formed, and this gas inlet 3 communicates with a large number of gas outlet ports 5 formed in the groove surface 4b at the bottom via a gas path 4. Other than that, it is the same as before.
このウェーハキャリアを使用して、ウェーハを処理する
場合は、まず、ウェーハ2をウェーハキャリアの開口面
1より挿入し、底部の清に外縁部をはめ込み、収納する
0次に、ウェーハ2を収納したウェーハキャリアを液槽
8に漬け、ウェーハキャリアを載置台に置く0次に、ガ
ス導入口3に配管6を接続し、配管6よりガス、例えば
オゾンあるいは窒素を供給する。このことによりガスは
ガス導入口3からガス経路4を経て、ガス導出口5より
吐出する。このガスの吐出よりバブルが発生し、このバ
ブルはウェーハ2の面に沿って、薬液9の液面から抜け
る。When using this wafer carrier to process wafers, first insert the wafer 2 into the wafer carrier through opening 1, fit the outer edge into the bottom hole, and store the wafer. The wafer carrier is immersed in a liquid bath 8, and the wafer carrier is placed on a mounting table. Next, a pipe 6 is connected to the gas inlet 3, and a gas such as ozone or nitrogen is supplied from the pipe 6. As a result, gas passes from the gas inlet 3 through the gas path 4 and is discharged from the gas outlet 5. Bubbles are generated by the discharge of this gas, and these bubbles escape from the liquid surface of the chemical solution 9 along the surface of the wafer 2.
このようにウェーハと接触する溝面に多数のガス導出口
を設け、気泡がウェーハ全面に沿って上昇するので、薬
液がウェーハ全面に均一に攪拌作用をもたらす、また、
このウェーハキャリアを使用することによって、従来の
液槽のように、バブルを発生するガス吐出ノズルを槽内
に設ける必要なく、より小型の槽で済むという利点があ
る。In this way, a large number of gas outlet ports are provided on the groove surface that comes into contact with the wafer, and the bubbles rise along the entire surface of the wafer, so that the chemical solution uniformly stirs the entire surface of the wafer.
The use of this wafer carrier has the advantage that unlike conventional liquid tanks, there is no need to provide a gas discharge nozzle that generates bubbles in the tank, and a smaller tank can be used.
以上説明したように本発明は、ウェーハキャリアの開口
面側にガス導入口を設け、ウェーハと接触する溝面に多
数のガス導出口を設けることによって、ガス導入による
バブルがウェーハ全面に沿って液面上に抜けるので、ウ
ェーハ面を一様に処理出来るとともに、ウェーハを効率
よく処理出来る。従って、本発明によれば、ウェーハ面
を均一に処理出来るとともにガスの浪費をより少くする
ウェーハキャリアが得られるという効果がある。As explained above, the present invention provides a gas inlet on the opening side of the wafer carrier and a large number of gas outlets on the groove surface that contacts the wafer, so that bubbles caused by the gas introduction flow into liquid along the entire surface of the wafer. Since it passes over the surface, the wafer surface can be processed uniformly and the wafer can be processed efficiently. Therefore, according to the present invention, it is possible to obtain a wafer carrier that can process the wafer surface uniformly and further reduces waste of gas.
1・・開口面、2・・・ウェーハ、3・・・ガス導入口
、4・・・ガス経路、4a・・・外縁部面、5・・・ガ
ス導出口、6・・配管、7・・・載1台、8・・液槽、
9・・・薬液。DESCRIPTION OF SYMBOLS 1... Opening surface, 2... Wafer, 3... Gas inlet, 4... Gas path, 4a... Outer edge surface, 5... Gas outlet, 6... Piping, 7... ...1 unit, 8...liquid tank,
9...Medical solution.
Claims (1)
面の底部に前記ウェーハの外縁部がはめ込まれる溝が複
数形成される箱型形状のウェーハキャリアにおいて、前
記開口面側の外縁部面にガス導入口が形成され、このガ
ス導入口が前記溝内に形成された複数のガス導出口と通
じていることを特徴とするウェーハカセット。In a box-shaped wafer carrier that has an opening surface into which a wafer is inserted in one direction, and a plurality of grooves into which the outer edge of the wafer is fitted is formed at the bottom of the opening surface, the outer edge surface on the side of the opening surface is A wafer cassette characterized in that a gas inlet is formed, and the gas inlet communicates with a plurality of gas outlet ports formed in the groove.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2145721A JPH0438851A (en) | 1990-06-04 | 1990-06-04 | Wafer carrier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2145721A JPH0438851A (en) | 1990-06-04 | 1990-06-04 | Wafer carrier |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0438851A true JPH0438851A (en) | 1992-02-10 |
Family
ID=15391598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2145721A Pending JPH0438851A (en) | 1990-06-04 | 1990-06-04 | Wafer carrier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0438851A (en) |
-
1990
- 1990-06-04 JP JP2145721A patent/JPH0438851A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5437777A (en) | Apparatus for forming a metal wiring pattern of semiconductor devices | |
KR20010053300A (en) | Method and apparatus for immersion treatment of semiconductor and other devices | |
KR20070102475A (en) | Substrate treatment apparatus | |
US7648580B2 (en) | Substrate processing method and substrate processing device | |
US6146468A (en) | Semiconductor wafer treatment | |
US5976311A (en) | Semiconductor wafer wet processing device | |
KR19980063342A (en) | Flat Substrate Wet Cleaning or Etching Methods and Apparatus | |
US6523552B2 (en) | Facility for treating objects in a process tank | |
JPH0438851A (en) | Wafer carrier | |
US20020104556A1 (en) | Controlled fluid flow and fluid mix system for treating objects | |
JP2009141022A (en) | Substrate processing apparatus | |
KR20200021681A (en) | substrate processing apparatus | |
JPS61166134A (en) | Processor | |
JPH01228123A (en) | Processor for semiconductor device | |
JP3118443B2 (en) | Wafer cleaning equipment | |
JPH0722371A (en) | Wet cleaning device | |
JPH0864571A (en) | Cleaning device in semiconductor wafer treating system | |
JPH07153736A (en) | Surface treatment device | |
JPH0722541U (en) | Substrate processing equipment | |
JPH0642333Y2 (en) | Processing tank for semiconductor materials | |
JPH02243750A (en) | Air knife mechanism | |
JPH0878381A (en) | Washing device | |
KR19980029398A (en) | Quick Dump Drain Wash Tank | |
JPH06302577A (en) | Treating apparatus for semiconductor substrate | |
JPS63263728A (en) | Semiconductor substrate cleaning device |