JPH04370640A - Charged particle beam processing device - Google Patents

Abstract

PURPOSE:To feed a reaction gas to the processing area on a sample evenly, and to carry out a high brightness observation of the secondary grain image of charged particle beams. CONSTITUTION:A gas nozzle formed in about a disk form, and a micro-channel plate 9 to be the secondary grain detector are set on the same axis, a passage 20 of charged beams is provided at the center of both members, and a hollow chamber 23 for reaction gas is formed to the gas nozzle 10. The hollow chamber 23 is combined to a gas feeding pipe 15 through the gas passage 22, and plural gas blowoff pipes 25 are installed to the gas nozzle 10 in the circumferential direction placing the same intervals. And the entrance side ends of the gas blowoff pipes 25 are communicated to the hollow chamber 23 through gas passages 24, and their outlet side ends have been set to spray the reaction gas to the processing area on a sample 10.

Description

[Detailed description of the invention]

0001

[Industrial Application Field] The present invention relates to a charged beam processing apparatus that performs microfabrication on a sample using a charged beam and a reactive gas, and particularly relates to a charged beam processing apparatus that performs microfabrication on a sample using a charged beam and a reactive gas, and particularly to a uniform supply of a reactive gas to a processing area on a sample. , relates to a charged beam processing device suitable for performing high-intensity observation of secondary particle images.

0002

[Prior Art] Charged beams such as focused ion beams and electron beams can be finely focused, and the energy of the charged beams can be used to perform fine processing such as wiring correction and failure analysis of semiconductor devices such as LSIs. It can be carried out. but,
Micromachining using a charged beam is a sputtering process in which sample atoms are ejected using a charged beam, and the processing speed is slow, the selectivity for the material of the sample being processed is low, and layers of different materials overlap. When there are two layers, there are problems such as difficulty in stopping processing at a desired layer.

In contrast, in recent years, processing techniques that combine reactive gases and charged beams such as focused ion beams and electron beams have been actively researched. With this processing technology,
Because the energy given by the charged beam activates the reactive gas and induces a chemical reaction, the sample can be etched at high speed, and the reactive gas (
By selecting a gas that is highly reactive with the material of the sample, processing can be stopped at a layer of the desired material. Also,
Local film formation can be performed by using CVD gas as a reactive gas.

[0004] An example of a device related to this type of processing device is the device described in Japanese Patent Laid-Open No. 1-169860.

[0005]

[Problems to be Solved by the Invention] In the prior art, reactive gas is supplied from one direction to the surface of the sample through a gas pipe, so when forming a hole with a high aspect ratio, for example, the supply of reactive gas is difficult. Since there is a difference between the side with the gas nozzle and the side without, the processed shape becomes uneven in proportion to the amount of reactive gas supplied, making it impossible to form a hole with a sufficient aspect ratio.

[0006] In order to prevent deviations in the processed shape,
It is necessary to uniformly supply the reactive gas to the processing area. As this type of processing equipment, for example, JP-A-59-1
The device described in Japanese Patent No. 51427 is exemplified. this is,
The reactive gas is uniformly supplied by providing a coaxial passage around one of the ion beam and reactive gas passages. However, in this conventional technology, no consideration is given to a secondary particle detector for observing the surface of the sample to determine the processing position, and since the processing speed depends on the amount of reactive gas supplied, the reactivity The distance between the gas outlet and the sample must be shortened. In such a case, because the distance between the reactive gas outlet and the sample becomes narrow, the secondary particles produced by irradiating the sample with the ion beam cannot be sufficiently detected by the secondary particle detector, and they may be affected by other noise. There was a problem in that the image of the surface of the sample could not be sufficiently observed because the sample was buried.

An object of the present invention is to provide a charged beam processing apparatus that can uniformly supply a reactive gas to a processing area on a sample and that can perform high-intensity observation of secondary particle images.

[0008]

[Means for Solving the Problems] In order to achieve the above object, in the present invention, the means for supplying gas is provided with means for uniformly spraying a reactive gas onto the processing area on the sample;
The secondary particle detector is provided with means for observing secondary particle images at high brightness.

Furthermore, in order to achieve the above object, in the present invention, the gas nozzle is formed into a substantially disk shape, the gas nozzle and the secondary particle detector are installed coaxially, and a passage for the charged beam is provided at the center of both members. A hollow chamber for the reactive gas is formed inside the gas nozzle, and the central part of the gas nozzle is formed in a shape that does not impede the incidence of secondary particles to the secondary particle detector. A plurality of gas blowing pipes are installed at equal intervals, the inlet end of each gas blowing pipe communicates with the hollow chamber, and the outlet end blows reactive gas toward the processing area on the sample. It is arranged as possible.

Furthermore, in order to achieve the above object, in the present invention, a gas supply pipe is installed above the secondary particle detector as a means for supplying a reactive gas, and a charged beam is directed toward the sample into this gas supply pipe. A passage is provided through which a reactive gas passes through and sprays a reactive gas from directly above the processing area on the sample.

Furthermore, in order to achieve the above object, in the present invention, a secondary particle drawing electrode is arranged on the secondary particle detection surface side of the secondary particle detector.

Furthermore, in order to achieve the above object, in the present invention, a gas nozzle is formed into a substantially disk shape, a passage is provided in the center of the gas nozzle through which a charged beam passes, and a hollow space for a reactive gas is provided inside the gas nozzle. A plurality of gas blowing pipes are attached to the gas nozzle at equal intervals in the circumferential direction, and the inlet end of each gas blowing pipe is connected to the hollow chamber, and the outlet end is connected to the sample. A secondary particle detector having a scintillator and a photomultiplier is arranged in the space between the side of the gas nozzle and the sample.

Furthermore, in order to achieve the above object, in the present invention, a gas supply pipe formed in a crank shape is installed as a means for supplying a reactive gas, and a vertical portion of the gas supply pipe disposed on the sample side is provided. Attach a scintillator to the bottom of the screen, and a half mirror to the top of this.
A photomultiplier is attached to the end of the horizontal portion of the gas supply pipe on the side opposite to the half mirror, the scintillator, the half mirror, and the photomultiply constitute a secondary particle detector, and the half mirror is configured to pass a charged beam. The scintillator is provided with a hole through which the charged beam passes and a reactive gas is blown from directly above the processing area on the sample.

Furthermore, in order to achieve the above object, the present invention includes, coaxially, a light guide made of a transparent material, and a gas nozzle made of a transparent material made of a substantially disk shape.
A scintillator is arranged, a passage for the charged beam is provided in the center of the light guide and the gas nozzle, a hole is provided in the center of the scintillator for passing the charged beam and the reactive gas, and the inside of the light guide is provided with a passage for the charged beam and the reactive gas. A hollow chamber for guiding fluorescence is formed, a hollow chamber for guiding fluorescence and reactive gas is formed inside the gas nozzle, and a plurality of gas outlets are provided at equal intervals in the circumferential direction in the center of the gas nozzle. The inlet of each gas outlet is arranged to communicate with the hollow chamber of the gas nozzle, the outlet is arranged so as to be able to blow a reactive gas toward the processing area on the sample, and the side of the hollow chamber of the light guide is arranged to communicate with the hollow chamber of the gas nozzle. The secondary particle detector is configured such that the fluorescence emitted from the scintillator passes through the hollow chamber of the gas nozzle and the hollow chamber of the light guide and enters the photomultiple.

Furthermore, in order to achieve the above object, the present invention provides a secondary particle detection surface side of the scintillator.
A secondary particle drawing electrode is provided.

Furthermore, in order to achieve the above object, in the present invention, a gas nozzle is formed of a transparent material into a substantially disk shape, a passage for a charged beam is provided in the center of the gas nozzle, and a hollow chamber is formed inside the gas nozzle. a plurality of gas outlets are provided around the passage at equal intervals in the circumferential direction, and an inlet of each gas outlet is communicated with the hollow chamber;
The outlet is arranged so that reactive gas can be sprayed toward the processing area on the sample, and a photomul is installed at the top of the gas nozzle as a secondary particle detector. A filter is installed that passes only the wavelength band of fluorescence, which is generated from sputtered particles and is unique to the material of the sample.

[0017] In order to effectively utilize the present invention, an etching gas is used as the reactive gas for charged beam processing to locally perform reactive etching.

Furthermore, in order to effectively utilize the present invention, CVD gas is used as the reactive gas, and is used in charged beam processing for locally performing beam deposition.

[0019]

[Function] In the invention according to claim 1 of the present invention, the means for supplying gas is provided with means for uniformly spraying a reactive gas onto the processing area on the sample, and the secondary particle detector has two
A means for observing secondary particle images at high brightness is provided.

Therefore, the reactive gas can be uniformly supplied to the processing area on the sample, and secondary particle images can be observed with high brightness.

Next, in the invention according to claim 2 of the present invention,
The charged beam is irradiated onto the surface of the sample through a passage provided at the center of a gas nozzle and a secondary particle detector installed coaxially. Secondary particles ejected by irradiating the surface of the sample with a charged beam are incident on a secondary particle detector and detected, thereby obtaining a secondary particle image.

On the other hand, the reactive gas is introduced into a hollow chamber for reactive gas formed inside the gas nozzle, and then blown onto the processing area on the sample through a gas blowing pipe attached to the gas nozzle.

In the second aspect of the invention, a plurality of gas blowing pipes are attached to the gas nozzle at equal intervals in the circumferential direction, and the outlet side end of each gas blowing pipe is connected to the processing area on the sample. Since the reactive gas is arranged so as to be able to be blown towards the specimen, the reactive gas can be uniformly supplied to the processing area on the sample through the plurality of gas blowing pipes. It is possible to prevent deviation in the processed shape due to non-uniform supply.

[0024] Furthermore, in the invention according to claim 2, even if the distance between the secondary particle detection surface of the secondary particle detector and the sample is sufficiently long, the plurality of particles attached at equal intervals in the circumferential direction The reactive gas can be uniformly supplied to the processing area on the sample through the main gas blow-off pipe, and the gas nozzle is formed in a shape that does not prevent secondary particles from entering the secondary particle detector. The yield of secondary particles that are ejected from the surface and incident on the secondary particle detector can be improved. As a result, high-intensity observation of secondary particle images becomes possible.

Therefore, according to the second aspect of the invention, it is possible to uniformly supply the reactive gas to the processing area on the sample and to observe the secondary particle image at high brightness.

Next, in the third aspect of the present invention, the charged beam is irradiated onto the surface of the sample through a passage provided in a gas supply pipe installed above the secondary particle detector. Secondary particles ejected from the surface of the sample by irradiation with the charged beam are directly incident on the detection surface of the secondary particle detector. As a result, high-intensity observation of secondary particle images becomes possible.

On the other hand, the reactive gas passes through the gas supply pipe and is blown onto the sample from directly above the processing area through a passage provided in the gas supply pipe. As a result, it becomes possible to uniformly spray the reactive gas onto the processing area on the sample.

[0028] Accordingly, also in the third aspect of the invention, it is possible to uniformly supply the reactive gas to the processing area on the sample and to observe the secondary particle image at high brightness.

In the fourth aspect of the present invention, a voltage for drawing in the secondary particles is applied to the drawing electrode arranged on the side of the detection surface of the secondary particles in the secondary particle detector. Thereby, the secondary particles can be forcibly drawn into the secondary particle detector, and as a result, the yield of secondary particles can be further improved.

Therefore, according to the fourth aspect of the invention, it is possible to further increase the brightness of the secondary particle image.

Next, in the invention according to claim 5 of the present invention,
The charged beam passes through a passage provided in the center of the gas nozzle and is irradiated onto the surface of the sample. Secondary particles ejected from the surface of the sample by irradiation with the charged beam enter a scintillator of a secondary particle detector disposed in the space between the side of the gas nozzle and the sample. When secondary particles are incident on the scintillator, fluorescence is emitted from the scintillator, this fluorescence enters the photomultiple, is converted into voltage by the photomultiple, and is output as a voltage signal.

[0032] In this way, a secondary particle image is obtained.

[0033] The reactive gas is introduced into a hollow chamber for the reactive gas formed inside the gas nozzle, and then passed through a plurality of gas blowing pipes attached to the gas nozzle at equal intervals in the circumferential direction. The spray is applied uniformly to the processing area on the sample.

Therefore, in the invention according to claim 5, even if the distance between the gas nozzle and the sample is increased and the secondary particle detector is disposed in the space between the side of the gas nozzle and the sample, the circular A plurality of gas blowing pipes are installed at equal intervals in the circumferential direction, and the outlet end is arranged so that the reactive gas can be blown toward the processing area on the sample. Since the reactive gas can be sprayed uniformly, it is possible to secure a space for the secondary particles to enter the secondary particle detector and evenly supply the reactive gas to the processing area on the sample. becomes.

In other words, according to the fifth aspect of the invention as well, it is possible to uniformly supply the reactive gas to the processing area on the sample and to observe the secondary particle image at high brightness.

Next, in the invention according to claim 6 of the present invention,
The charged beam is guided into the gas supply pipe through a hole provided in the half mirror of the secondary particle detector, and then irradiated onto the surface of the sample through a hole provided in the scintillator. The secondary particles ejected by irradiating the surface of the sample with a charged beam directly enter the scintillator and collide with the scintillator, causing fluorescence to be emitted from the scintillator.The fluorescence is reflected by the half mirror, and then passes through the gas supply pipe. It enters a photomulti attached to the photomulti, is converted into voltage by this photomulti, and is output as a voltage signal. Thereby, secondary particles are detected and a secondary particle image is obtained.

[0037] The reactive gas is introduced into the gas supply pipe and blown onto the sample directly above the processing area through a hole provided in a scintillator attached to the lower part of the vertical section of the gas supply pipe.

As a result, in the invention according to claim 6,
Since the reactive gas is sprayed from directly above the processing area on the sample, the reactive gas can be uniformly supplied to the processing area on the sample, and the secondary particles ejected from the surface of the sample are Since the light is directly incident on the scintillator of the particle detector, high-intensity observation of secondary particle images can be achieved.

Next, in the seventh aspect of the present invention, the charged beam passes through the passage provided in the center of the light guide and the gas nozzle, and further passes through the hole provided in the center of the scintillator to reach the sample. irradiated onto the surface. Secondary particles ejected from the sample by irradiating the surface of the sample with a charged beam are directly incident on a scintillator of a secondary particle detector, and fluorescence is emitted from the scintillator. The fluorescence passes through a hollow chamber formed inside a gas nozzle made of a transparent material, and then through a hollow chamber formed inside a light guide made of a transparent material. The light enters the photomultiplier provided on the side of the Fluorescence incident on the photomultiplier is converted into voltage and output as a voltage signal. A secondary particle image is obtained based on this output.

On the other hand, the reactive gas is introduced into a hollow chamber formed in the gas nozzle, and then the reactive gas is provided in the center of the gas nozzle at equal intervals in the circumferential direction, and the reactive gas is directed toward the processing area on the sample. The gas is uniformly sprayed onto the processing area on the sample through a plurality of gas outlets arranged to be able to spray the gas.

Therefore, in the seventh aspect of the invention as well, it is possible to uniformly supply the reactive gas to the processing area on the sample and to observe the secondary particle image at high brightness.

Furthermore, in the eighth aspect of the present invention, a voltage for drawing in the secondary particles is applied to a drawing electrode provided on the side of the secondary particle detection surface of the scintillator. Thereby, secondary particles can be forcibly drawn into the scintillator.

As a result, in the invention according to claim 8,
It becomes possible to further improve high-intensity observation of secondary particle images.

Next, in the ninth aspect of the present invention, the charged beam is irradiated onto the surface of the sample through a passage provided in the center of the gas nozzle. Reaction products are generated by irradiating the surface of the sample with a charged beam. This reaction product emits fluorescence specific to the substance of the sample. This fluorescence passes through the surface of the gas nozzle, which is made of a transparent material and is formed into an approximately disk shape.

[0045] A plurality of photomultipliers are installed above the gas nozzle as secondary particle detectors. In front of each photomultiply, a filter is installed that passes only the fluorescence wavelength band unique to the sample material, which is generated from reaction products and sputtered particles from the sample.

[0046] Therefore, the fluorescence generated by the reaction product from the sample passes through a filter that passes only this wavelength band, and enters the photomultiplier. The photomulti converts the incident fluorescence into voltage and outputs it as a voltage signal. Therefore, 2
A secondary particle image is obtained.

On the other hand, the reactive gas is introduced into a hollow chamber formed inside the gas nozzle, and then a passage is provided at equal intervals in the circumferential direction around a passage provided in the center of the gas nozzle, and an outlet is provided. The reactive gas is uniformly sprayed onto the processing area on the sample through a plurality of gas outlets arranged to be able to spray the reactive gas toward the processing area on the sample.

By the way, by spraying a reactive gas onto the sample and irradiating the sample with a charged beam in the reactive gas atmosphere,
When reactive processing is performed, sputtered particles are generated. These sputtered particles also emit fluorescence unique to the substance of the sample. This fluorescence is transmitted through the surface of the gas nozzle, which is made of a transparent material. Then, the fluorescence passes through a filter that passes only this wavelength band, and enters the photomultiplex. The photomultiplier converts the incident fluorescence into voltage and outputs it as a voltage signal. Thereby, a secondary particle image can also be obtained from the fluorescence peculiar to the substance of the sample, which is generated from sputtered particles when the reactive treatment is performed.

By monitoring these two secondary particle images, the detection accuracy between layers in a sample such as a multilayer LSI can be improved.

[0050] Also in the ninth aspect of the invention, a reaction is caused to the processing area on the sample through the plurality of gas blow-off ports provided at equal intervals in the circumferential direction around the center of the gas nozzle. A gas nozzle that can supply a uniform gas and is made of a transparent material, a plurality of photomultis that are secondary particle detectors installed on top of the gas nozzle, and a photomultiplier placed in front of each photomultiply. By working with the filter, secondary particle images can be observed at high brightness.

[0051] Further, in the tenth aspect of the present invention, an etching gas is used as the reactive gas, and the etching gas is used in charged beam processing for locally reactive etching. In the invention, since CVD gas is used as a reactive gas and is used for charged beam processing in which beam deposition is performed locally, the invention can be effectively utilized in each case.

[0052]

Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.

First embodiment: FIGS. 1 to 4 show the first embodiment of the present invention.
FIG. 1 is a block diagram schematically showing the overall configuration of the device, and FIG. 2 is a partially cutaway enlarged perspective view showing details of the microchannel plate and gas nozzle portion, which are secondary particle detectors. FIG. 3 is a model diagram of secondary particle detection, and FIG. 4 is a diagram showing the relationship between the angle of view of secondary particles incident on a microchannel plate and the yield.

Although almost the same processing can be performed using either an ion beam or an electron beam as a charged beam, an example using a focused ion beam will be shown here as a representative example.

In the first embodiment shown in these figures, FIG.
As shown in FIG. 2, an ion beam chamber (hereinafter referred to as "IB chamber") 13 is installed above the main chamber 14.

In the IB chamber 13, an ion source 1 is installed.
an extraction electrode 3 for extracting the ion beam 2 from the ion beam 2, a focusing lens 4 for focusing the extracted ion beam 2, an aperture 5, and an ON/O state for the ion beam 2.
A focusing ion beam optical system is provided that includes a blanking electrode 6 for performing FF, a blanking aperture 7, and a deflector electrode 8 for deflecting the ion beam 2. The focused ion beam optical system is controlled by an ion beam controller (not shown).

An orifice is provided at the bottom of the IB chamber 13 to allow the ion beam 2 to pass through and to prevent reactive gas from flowing into the IB chamber 13.

Inside the main chamber 14, there is a stage 12 on which a sample 11 as a workpiece is mounted, a gas nozzle 10 for spraying a reactive gas onto the sample 11, and a gas nozzle 10 for spraying reactive gas onto the sample 11. A microchannel plate 9, which is a secondary particle detector for detecting secondary particles, is provided. The stage 12 of the sample 11 is configured such that its processing position can be displaced by the screw action of a ball screw and a nut. The main chamber 14 is kept in a vacuum by an exhaust pipe and an exhaust device (not shown).

The gas nozzle 10 includes a gas supply pipe 15, a valve 16, a mass flow 17, and a valve 18.
A gas cylinder 19 containing a reactive gas is connected thereto. The amount of reactive gas blown out from the gas nozzle 10 is controlled by a mass flow controller (not shown).

As shown in FIG. 2, a passage 20 of sufficient size for scanning the ion beam 2 is provided in the center of the microchannel plate 9. As shown in FIG.

[0061] As shown in FIGS. 1 and 2, the gas nozzle is formed into a substantially disk shape. At the center of the gas nozzle 10, as shown in FIG.
A conical passage 21 is provided whose diameter gradually decreases in the direction of irradiation. Secondary particles e of the ion beam 2 ejected from the surface of the sample 11 enter the microchannel plate 9 through this conical passage 21 . This passage 21 is connected to the microchannel plate 9.
It is formed in a shape that allows the secondary particles e to be incident on the detection surface over a wide range with a center angle of 45 degrees or more, and is set at a position a long distance from the surface of the sample 11. Further, inside the gas nozzle 10, as shown in FIG. 2, a hollow chamber 23 for a reactive gas is formed near the center. This hollow chamber 23 is connected to the gas supply pipe 15 through a gas passage 22 provided inside the gas nozzle 10. Further, a plurality of gas blowing pipes 25 are attached to the center of the gas nozzle 10 at equal intervals in the circumferential direction. The inlet side end of each gas blowing pipe 25 is
The gas nozzle 10 communicates with the hollow chamber 23 through a gas passage 24 provided inside the gas nozzle 10, and its outlet end is arranged in an inclined manner so that the reactive gas can be sprayed toward the processing area on the sample 11.

To perform charged beam processing using the charged beam processing apparatus of the first embodiment, the ion beam 2 is extracted from the ion source 1 shown in FIG. ranking electrode 6,
The ion beam 2 is focused by the blanking aperture 7 and the deflector electrode 8, and as shown in FIG. 11. By irradiating the sample 11 with the ion beam 2, secondary particles e are ejected from the surface of the sample 11. 2 ejected from the surface of sample 11
The next particle e enters the microchannel plate 9,
By detecting this, a secondary particle image is obtained. While observing the surface of the sample 11 using this secondary particle image, the stage 12 of the sample 11 is moved to determine the processing area. After determining the processing area, the gas cylinder 19 shown in FIG.
The reactive gas is caused to flow through the mass flow 17 through the valve 18, and the flow rate is controlled by this mass flow 17.
6 and a gas supply pipe 15, leading to a hollow chamber 23 for the reactive gas via a gas passage 22 provided in the gas nozzle 10. Next, the reactive gas is blown onto the processing area on the sample 11 from the gas passage 24 through the plurality of gas blowing pipes 25 attached to the gas nozzle 10 . At this time, a plurality of gas blowing pipes 25 are attached to the gas nozzle 10 at equal intervals in the circumferential direction, and the outlet side end of each gas blowing pipe 25 blows reactive gas into the processing area on the sample 11. Since it is arranged so that it can be sprayed, the reactive gas can be uniformly and accurately supplied to the processing area on the sample 11.

Note that the charged beam treatment may be reactive etching using an etching gas or beam assisted deposition using a CVD gas. In addition, as the enching gas, for example, Cl2, SiCl4, CF4
, XeF2, etc. Examples of the CVD gas include W(CO)6, Mo(CO)6, and the like.

The effect of increasing the brightness of the secondary particle image in this example will now be explained with reference to FIGS. 3 and 4.

As shown in FIG. 3, as the sample 11 is irradiated with the ion beam 2, the secondary particles e are exposed to the sample 11.
It is generally ejected from the surface with a cosine distribution. At this time, the amount incident on the microchannel plate 9 is
It is only the amount that comes out through the passage 21 provided in the center of the gas nozzle 10. Here, if the center point of the cosine distribution is b and the length of the outer diameter is a, the volume V0 of the cosine distribution is expressed by the following formula.

[0066]

[Math 1]

The volume V of the shaded area is expressed by the following equation.

[0068]

[Math 2]

From these two equations, the relationship between the yield V/V0 of secondary particles e incident on the microchannel plate 9 and the angle of view α can be expressed in a graph as shown in FIG. Here, for example, the diameter φ of the passage 21 at the center of the gas nozzle 10 is 800 μm, and the distance h between the gas nozzle 10 and the sample 11 is
When is set to 500 μm, the angle of view α is approximately 39°,
The yield of secondary particles e at that time is 64%, as seen from curve I shown in FIG.

In contrast, in this embodiment, as shown in FIG. 2, a plurality of gas blowing pipes 23 are attached to the gas nozzle 10 at equal intervals in the circumferential direction, and the sample 11 is supplied through the gas blowing pipes 23. A reactive gas is sprayed onto the processed area of the surface. As a result, the diameter φ of the passage 21 at the center of the gas nozzle 10 can be increased, thereby improving the yield of secondary particles e. For example, if the diameter φ of the passage 21 in the center of the gas nozzle 10 is set to 1.2 mm, the yield of secondary particles e will be 80%, and the secondary particles coming out from the sample 11 in the microchannel plate 9 will be Most of the particles e can be collected. As a result, high-intensity observation of secondary particle images can be performed.

Therefore, according to this first embodiment,
It becomes possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image of the ion beam 2 at high brightness.

Second embodiment: FIGS. 5 to 7 show the second embodiment of the present invention.
Fig. 5 is a partially cutaway enlarged perspective view showing details of the microchannel plate, gas nozzle, and secondary particle drawing electrode, Fig. 6 is a model diagram of secondary particle detection, and Fig. 7 is a micro 2 incident on the channel plate
FIG. 3 is a diagram showing the relationship between the prospective angle of secondary particles and the yield.

In this second embodiment, as shown in FIGS. 5 and 6, a mesh-like lead-in electrode 27 is arranged between the microchannel plate 9 and the gas nozzle 10. A hole 28 large enough for the ion beam 2 to pass through is provided in the center of the pull-in electrode 27 . In addition, the lead-in electrode 27 has a power source 29
is connected.

[0074] Inside the gas nozzle 10, a plurality of gas blow-off ports 26 are provided at equal intervals in the circumferential direction. The inlet side end of each gas outlet 26 communicates with the hollow chamber 23 for reactive gas through the gas passage 24, and the outlet side end is provided so that the reactive gas can be blown toward the processing area on the sample 11. It is being

In this second embodiment, the power supply 29 supplies the drawing electrode 27 with +50
Apply a voltage of about 0V. When a voltage is applied to the lead-in electrode 27, the sample 11 is irradiated with the ion beam 2.
The secondary particles e ejected from the surface are forcibly drawn through the passage 21 provided in the center of the gas nozzle 10 by the voltage applied to the drawing electrode 27, accelerated, and incident on the microchannel plate 9. and detected. In this case, the secondary particles e ejected from the surface of the sample 11
As shown in FIG. 6, the distribution becomes an overcosine distribution like a vertically stretched curve II. The angle of view α of the secondary particles e entering the microchannel plate 9 from the point irradiated with the ion beam 2 at this time,
The relationship between the yield of secondary particles e is as shown in FIG. That is, c shown by curve I when no lead-in electrode is provided.
The yield is similar to curve II, which is shifted toward the smaller angle of view α than the yield of the osine distribution.

As can be seen from FIG. 7, according to the second embodiment, the probability of secondary particles e passing through the passage 21 provided in the center of the gas nozzle 10 and entering the microchannel plate 9 is Even when the angle α is small, the secondary particles e can be efficiently incident on the microchannel plate 9 by the action of the drawing electrode 27 provided between the microchannel plate 9 and the gas nozzle 10, and therefore the secondary particle image is High brightness observation becomes possible.

In addition, the reactive gas is supplied to the gas nozzle 10 through a plurality of gas blow-off ports provided at equal intervals in the circumferential direction and capable of blowing the reactive gas toward the processing area on the sample 11. Since the powder is sprayed through 26, it is possible to uniformly supply the processing area on the sample 11.

Therefore, in this second embodiment as well, it is possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image at high brightness.

[0079] In this second embodiment, other configurations and operations are the same as those in the first embodiment.

Third Embodiment: FIGS. 8 to 10 show a third embodiment of the present invention, in which FIG. 8 is a partially cutaway enlarged perspective view showing details of the gas nozzle and microchannel plate, and FIG. 9 is a model diagram of secondary particle detection, and FIG. 10 is a diagram showing the relationship between the angle of view of secondary particles incident on the microchannel plate and the yield.

In this third embodiment, a gas nozzle 30 and a microchannel plate 31 are installed coaxially, and the microchannel plate 31 is placed below the gas nozzle 30. A through hole is provided in the center of the gas nozzle 30 and the microchannel plate 31, respectively.

[0082] A sleeve 32 is attached to the through hole. This sleeve 32 is provided with a mounting flange 33, and a passage 34 for passing the ion beam 2 is provided inside. The gas nozzle 30 and the microchannel plate 31 are integrally connected via this sleeve 32.

[0083] Inside the gas nozzle 30, a hollow chamber 36 for a reactive gas is formed.

[0084] This hollow chamber 36 is connected to the gas supply pipe 15 through a gas passage 35. On the other hand, a plurality of gas blowing pipes 38 are attached to the lower side of the sleeve 32 at equal intervals in the circumferential direction. The inlet side end of each gas blowing pipe 38 is connected to the gas passage 37
It communicates with the hollow chamber 36 through the hollow chamber 36, and the outlet side end is arranged so that the reactive gas can be blown toward the processing area on the sample 11.

In the third embodiment with the above configuration, the ion beam 2 is irradiated onto the surface of the sample 11 through the passage 34 provided inside the sleeve 32. The secondary particles e ejected from the surface of the sample 11 by irradiation with the ion beam 2 directly enter the detection surface of the microchannel plate 31. By detecting the secondary particles e, a secondary particle image is obtained and the processing area on the sample 11 is determined.

On the other hand, the reactive gas is supplied from the gas supply pipe 15 through the gas passage 35 provided in the gas nozzle 30.
The gas is introduced into a hollow chamber 36 formed inside the gas nozzle 30 . The reactive gas then passes through a gas passage 37 provided within the sleeve 32 and is blown onto the processing area on the sample 11 through a gas blowing pipe 38 attached to the sleeve 32 . At this time, a plurality of tubes are attached to the lower side of the sleeve 32 at equal intervals in the circumferential direction and are arranged so that the outlet side end can spray reactive gas toward the processing area on the sample 11. Gas outlet pipe 3
8, the reactive gas can be uniformly and accurately supplied to the processing area.

By the way, as shown in FIG. 9, the distribution of the secondary particles e ejected by irradiating the surface of the sample 11 with the ion beam 2 is a cosine distribution, and the area where the ions are incident on the microchannel plate 31 is This is an area corresponding to the viewing angle β from the point where the beam 2 is irradiated to the detection surface of the microchannel plate 31. FIG. 10 shows the relationship between this angle of view β and the ratio of the volume of the entire cosine distribution to the volume of the portion incident on the microchannel plate 31, that is, the yield of secondary particles e. As can be seen from FIG. 10, the yield of secondary particles e increases as the angle of view β increases. Here, in order to increase the viewing angle β, the distance between the sample 11 and the microchannel plate 31 may be increased. Therefore, in this embodiment, the gas nozzle 3 is connected via the sleeve 32.
0 and the microchannel plate 31 are integrated, and a plurality of gas blowing pipes 37 are attached to the lower side of the sleeve 32 at equal intervals in the circumferential direction, and the outlet side end of each gas blowing pipe 37 is connected to the sample. Since the arrangement is such that the reactive gas can be sprayed toward the processing area on the sample 11, the reactive gas can be uniformly sprayed onto the processing area on the sample 11, and the space between the sample 11 and the microchannel plate 31 is can be made longer, thereby making it possible to improve the yield of secondary particles e.

Therefore, in this third embodiment as well, it is possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image at high brightness.

Fourth Embodiment: FIGS. 11 and 12 show a fourth embodiment of the present invention. FIG. 11 is a model diagram of secondary particle detection, and FIG. 12 is a model diagram of secondary particle detection incident on a microchannel plate. FIG. 3 is a diagram showing the relationship between the prospective angle of particles and the yield.

In this fourth embodiment, a lead-in electrode 39 is arranged on the side of the secondary particle e detection surface of the microchannel plate 31. This lead-in electrode 39
A hole 40 of a size that does not prevent passage of the ion beam 2 and the reactive gas is provided in the center of the hole 40 . Further, a power source 41 that applies a voltage for drawing in the secondary particles e is connected to the drawing electrode 39.

In this embodiment, the distribution of secondary particles e ejected from the sample 11 by irradiation with the ion beam 2 is changed to the cosine distribution ( (see curve I in FIG. 12) becomes a laterally expanded undercosine distribution (see curve II in FIG. 12). At this time, the angle of incidence β of the secondary particle e is the ratio of the volume of the entire undercosine distribution to the volume of the part of the angle of view β, that is, 2
The relationship between the yield of the secondary particles e is as shown in curve II shown in FIG. As can be seen from FIG. 12, even when the angle of view β is small, the secondary particles e can be sufficiently detected, thus making it possible to observe the secondary particle image with high brightness.

Note that the other configurations and operations of this fourth embodiment are the same as those of the third embodiment.

Fifth Embodiment: FIG. 13 shows a fifth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas supply pipe, a gas blowing pipe, and a microchannel plate.

In this fifth embodiment, a gas supply pipe 43 is arranged above the microchannel plate 42.

A passage 44 for passing a pipe is formed in the center of the microchannel plate 42.

A reactive gas is introduced into the gas supply pipe 43 from a gas cylinder (not shown). Further, the gas supply pipe 43 is coaxially provided with a through hole 45 having a size sufficient to allow the ion beam 2 to pass therethrough, and an ion beam passing and gas blowing pipe 46 . This ion beam passing and gas blowing pipe 46 is inserted into a pipe passageway 44 formed in the microchannel plate 42, and the sample 11
It is installed so that reactive gas can be sprayed onto the upper processing area from directly above.

In this embodiment, the ion beam 2 is irradiated onto the surface of the sample 11 through the through hole 45 provided in the gas supply pipe 43 and the ion beam passing and gas blowing pipe 46. Secondary particles e ejected from the surface of the sample 11 by irradiation with the ion beam 2 directly enter the detection surface of the microchannel plate 42 and are detected. As a result, the 2 ejected from the surface of the sample 11
Since the secondary particles e are efficiently incident on the microchannel plate 42, high-intensity observation of secondary particle images is possible.

Then, the reactive gas is supplied to the gas supply pipe 43.
Since the reactive gas is blown from directly above the processing area on the sample 11 from the ion beam passage/gas blowing pipe 46, it is possible to uniformly and accurately spray the reactive gas onto the processing area.

Furthermore, in this embodiment, the structure of the means for supplying the reactive gas can be simplified.

Furthermore, in this embodiment, a drawing electrode connected to a power source is provided at the bottom of the microchannel plate 42 to forcibly draw the secondary particles e into the microchannel plate 42 efficiently. It may be made to be incident.

Sixth Embodiment: FIG. 14 shows a sixth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas nozzle and a secondary particle detector.

In this sixth embodiment, the gas nozzle 10 and the means for supplying reactive gas provided therein are the same as those in the first embodiment shown in FIG. 2 and the second embodiment shown in FIG. Although they are similar, the secondary particle detector that detects the secondary particles e is different.

That is, a part of the outer periphery of the gas nozzle 10 is cut out, and a secondary particle detector is placed next to the cutout 47.

The secondary particle detector includes a scintillator 48 and a photomultiplier 49. A power source 50 is connected to the scintillator 48,
A voltage of approximately +10 kV is applied to the scintillator 48 through this power source 50. This scintillator 48 is designed to emit fluorescence when secondary particles e ejected from the surface of the sample 11 collide with it. When the fluorescence emitted from the scintillator 48 enters the light-receiving surface, the photomultiple 49 converts the fluorescence into voltage, further amplifies it, and outputs it as a voltage signal.

In the sixth embodiment with the above configuration, the ion beam 2 is irradiated onto the surface of the sample 11 through the passage 21 provided in the center of the gas nozzle 10. And sample 11
The secondary particles e ejected from the surface of the gas nozzle 10 collide with a scintillator 48 of a secondary particle detector placed beside the notch 47 of the gas nozzle 10 . When the secondary particles e collide with the scintillator 48, the scintillator 48 emits fluorescence, and the fluorescence enters the light receiving surface of the photomultiplier 49. Photomaru 49
When fluorescence is incident on the light-receiving surface of the photomultiplier 49, the photomultiplier 49 converts the fluorescence into voltage, amplifies it, and outputs a voltage signal. By detecting this output, it becomes possible to obtain a secondary particle image.

By the way, if the distance between the gas nozzle 10 and the sample 11 is short, the amount of secondary particles e incident on the scintillator 48 will be small, making it impossible to obtain a sufficient secondary particle image. In this respect, in this sixth embodiment, the first
Similarly to the embodiment described above, a plurality of gas blowing pipes 25 are attached to the gas nozzle 10 formed in a substantially disk shape at equal intervals in the circumferential direction, and the outlet side end of each gas blowing pipe 25 is Since the gas nozzle 10 is arranged so as to be able to spray reactive gas toward the processing area on the sample 11, the reactive gas can be sprayed uniformly and accurately onto the processing area on the sample 11, and then the gas nozzle 10
The distance between the sample 11 and the sample 11 can be set to a length that does not prevent the secondary particles e from entering the scintillator 48. Further, in this embodiment, a part of the outer periphery of the gas nozzle 10 is cut out, and a scintillator 48 of the secondary particle detector is inserted into this cutout 47.
, it is possible to make the secondary particles e enter the scintillator 48 more efficiently.

Therefore, in this sixth embodiment as well, it is possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image at high brightness.

Seventh Embodiment: FIG. 15 shows a seventh embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of the gas nozzle, secondary particle detector, and first and second lead-in electrodes. It is a diagram.

In this seventh embodiment, a mesh-like first lead-in electrode 51 is arranged above the gas nozzle 10, and a scintillator 48 constituting a secondary particle detector is arranged.
A mesh-like second lead-in electrode 53 is arranged on the front surface.

The first pull-in electrode 51 has a hole 5 in the center that is large enough to scan the ion beam 2.
2 is provided. This first lead-in electrode 51 is
The hole 52 is arranged so as to be aligned with the center line of the passage 21 provided in the gas nozzle 10. Further, a power source 54 is connected to this first lead-in electrode 51.

The second retraction electrode 53 is installed at a position where the secondary particles e of the ion beam 2 pulled up by the first retraction electrode 51 can be efficiently incident thereon. A power source 55 is connected to this second lead-in electrode 53.

In the seventh embodiment configured as described above, the ion beam 2 passes through the hole 52 provided in the first extraction electrode 51 and passes through the passage 21 provided in the gas nozzle 10.
The sample 11 is irradiated through the beam. And the first,
The second lead-in electrodes 51 and 53 each have a power source 54
, 55, a voltage is applied to draw in the secondary particles e. Therefore, the secondary particles e ejected from the sample 11 pass through the passage 21 provided in the gas nozzle 10,
The light is pulled up to the first drawing electrode 51, then drawn from the first drawing electrode 51 to the second drawing electrode 53, and then incident on the scintillator 48.

[0113] Thereby, the secondary particles e ejected from the sample 11 can be efficiently incident on the scintillator 48, so that it is possible to further increase the brightness of the secondary particle image.

The other structure and operation of this seventh embodiment are the same as those of the second embodiment.

Eighth Embodiment Next, FIG. 16 shows an eighth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas supply pipe and a secondary particle detector.

In this eighth embodiment, the gas supply pipe 5
It is equipped with 6.

The gas supply pipe 56 has a vertical portion 56a provided perpendicularly to the sample 11, and a horizontal portion 56.
b and a vertical portion 56c are connected to form a crank shape. The vertical portion 56a of the gas supply pipe 56 is placed on the sample 11 side. The gas supply pipe 5
A scintillator 57 having a hole 58 in the center is attached to the lower end of the vertical portion 56a of 6. A power source 59 is connected to this scintillator 57 . A half mirror 60 having a hole 61 is tilted and attached to a corner portion between the vertical portion 56a and the horizontal portion 56b of the gas supply pipe 56. The gas supply pipe 5
A photomultiplier 62 is attached to the end of the horizontal portion 56b of 6 on the vertical portion 56c side. A reactive gas cylinder 19 is connected to the vertical portion 56c of the gas supply pipe 56 via piping shown in FIG.

In the secondary particle detector of this embodiment, when the secondary particle e enters and collides with the scintillator 57, fluorescence is emitted from the scintillator 57, and the fluorescence is reflected by the half mirror 60 toward the photomultiple 62. , is converted into a voltage by the photomultiplier 62, and is output as a voltage signal.

In this eighth embodiment, the ion beam 2 passes through the hole 61 provided in the half mirror 60, passes through the vertical portion 56a of the gas supply pipe 56 and the hole 58 provided in the scintillator 57, and reaches the sample 11. irradiated onto the surface of Secondary particles e generated by irradiating the sample 11 with the ion beam 2 collide with the scintillator 57. When the secondary particles e collide with the scintillator 57, fluorescence is emitted from the scintillator 57, and the fluorescence is reflected by the half mirror 60 toward the photomultiple 62.
The photomultiplier 62 converts it into a voltage, amplifies it and outputs it as a voltage signal, and a secondary particle image is obtained from this voltage signal.

On the other hand, the reactive gas is supplied to the vertical portion 56c, horizontal portion 56b and vertical portion 56a of the gas supply pipe 56.
The charged beam passes through the hole 58 provided in the scintillator 57 and is blown onto the processing area on the sample 11 from directly above, thereby performing charged beam processing.

Therefore, in this eighth embodiment as well, it is possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image at high brightness.

In this eighth embodiment, a lead-in electrode may be provided below the scintillator 57.

Ninth Embodiment Next, FIG. 17 shows a ninth embodiment of the present invention, in which a light guide, a gas nozzle and two
FIG. 3 is a partially cutaway enlarged perspective view showing details of a secondary particle detector portion.

In this ninth embodiment, a light guide 63, a gas nozzle 64, and a scintillator 6 are sequentially installed from top to bottom.
9 are installed coaxially, and a photomultiplex 72 is provided on one side of the light guide 63.

[0125] The light guide 63 and gas nozzle 64 are
Each is made of transparent material such as quartz glass,
Further, the gas nozzle 64 is formed into a substantially disk shape, and the light guide 63 is formed into a cap shape that can be placed on the gas nozzle 64, and the light guide 63 is integrally attached to the upper surface of the gas nozzle 64. A passage 65 for the ion beam 2 is provided in the center of the light guide 63 and the gas nozzle 64.

[0126] Inside the light guide 63, there is a hollow chamber 66.
is formed.

[0127] There is also a hollow chamber 6 inside the gas nozzle 64.
7 is formed. Further, a gas supply pipe 15 is attached to the gas nozzle 64 so as to open into the hollow chamber 67, and this gas supply pipe 15 is connected to a reactive gas gas cylinder 19 shown in FIG. Further, on the passage 65 side of the gas nozzle 64, a plurality of gas blow-off ports 68 are provided at equal intervals in the circumferential direction. Each gas outlet 68 is connected to a hollow chamber 67 formed inside the gas nozzle 64 and is provided so as to be able to spray a reactive gas toward the processing area on the sample 11 .

A hole 70 concentric with the passage 65 is provided in the center of the scintillator 69. Also,
A power source 71 is connected to the scintillator 69 .

The photomultiplier 72 is attached to one side of the light guide 63 so as to take in fluorescence through the hollow chamber 66 within the light guide 63.

The scintillator 69 and the photomultiplier 72 constitute a secondary particle detector that detects the secondary particles e ejected from the surface of the sample 11.
When the secondary particles e collide with 9, it emits fluorescence, and the fluorescence passes through the hollow chamber 67 formed inside the gas nozzle 64.
The light then enters the photomultiplier 72 through a hollow chamber 66 formed inside the light guide 63, is converted into a voltage by the photomultiplier 72, is amplified, and is output as a voltage signal. Based on this voltage signal, a secondary particle image is generated. is now available.

In the ninth embodiment configured as described above,
The ion beam 2 passes through a passage 65 provided at the center of a light guide 63 and a gas nozzle 64, passes through a hole 70 provided in a scintillator 69, and is irradiated onto the sample 11.

The secondary particles e ejected by irradiating the sample 11 with the ion beam 2 collide with the scintillator 69, and fluorescence is emitted from the scintillator 69. The fluorescence enters the hollow chamber 67 in the gas nozzle 64. passes through the hollow chamber 66 in the light guide 63 and passes through the photomultiplier 72.
to go into. The fluorescence incident on this photomultiple 72 is converted into voltage, further amplified, and output as a voltage signal.
A secondary particle image is obtained by this voltage signal.

On the other hand, the reactive gas is led from the gas supply pipe 15 to the hollow chamber 67 in the gas nozzle 64, and the passage 65 of the gas nozzle 64 has a plurality of gas blow-off ports provided at equal intervals in the circumferential direction. 68 onto the processing area on the sample 11.

As a result, also in this ninth embodiment,
It is possible to uniformly supply the reactive gas to the processing area on the sample 11 and to observe the secondary particle image at high brightness.

10th Embodiment Next, FIG. 18 shows a 10th embodiment of the present invention, and shows a part showing details of a photomultiplier having a gas nozzle and a filter for observing the processing state of a sample. FIG.

In this tenth embodiment, the gas nozzle 73
Photomultiples 78, 79, and 80 are installed above the . Filters 81, 82, 83 are arranged in front of the photomultiples 78, 79, 80.

[0137] The gas nozzle 73 is made of a transparent material such as quartz glass. A passage 74 is provided in the center of the gas nozzle 73.
A hollow chamber 75 is formed inside 3. Furthermore, a gas supply pipe 15 is connected to the outer edge of the gas nozzle 73 so as to communicate with the hollow chamber 75 . Furthermore, gas nozzle 7
The passage 74 in No. 3 is provided with a plurality of gas outlet ports 76 at equal intervals in the circumferential direction.

[0138] The photomultiples 78, 79, and 80 are installed to face the upper surface of the gas nozzle 73, respectively. When fluorescent light is incident, the photomultiples 78, 79, and 80 convert it into a voltage, amplify it, and output it as a voltage signal, thereby functioning as a secondary particle detector that detects reaction products or sputtered particles.

The filters 81, 82, and 83 contain fluorescence peculiar to the substance of the sample 11 generated from reaction products or sputtered particles when the sample 11 is irradiated with the ion beam 2 and processed by spraying a reactive gas. A device that passes only the wavelength band is used.

In FIG. 18, the reaction product or sparter particles are indicated by the reference numeral 77.

In this tenth embodiment, the ion beam 2
passes through a passage 74 provided at the center of the gas nozzle 73 and is irradiated onto the sample 11. As described above, by irradiating the ion beam 2, the surface of the sample 11 emits fluorescence having a spectral peak unique to the substance of the sample 11. This fluorescence passes through a transparent gas nozzle 73, and filters 81, 82, 83 pass only the fluorescence in a specific wavelength band.
The light enters the photomultiples 78, 79, and 80 through the photomultipliers 78, 79, and 80. Filters 81, 82,
83 and photomultiples 78, 79, and 80, high-intensity observation of secondary particle images can be performed.

The reactive gas is led from the gas supply pipe 15 to the hollow chamber 75 formed inside the gas nozzle 73, and is then blown onto the processing area on the sample 11 through the gas outlet 76 provided in the gas nozzle 73. . Since a plurality of gas blowing ports 76 are provided at equal intervals in the circumferential direction, it is possible to spray the reactive gas uniformly and accurately onto the processing area on the sample 11.

Sputtered particles are generated from the sample 11 by blowing a reactive gas onto the processing area on the sample 11. The fluorescence of the sputtered particles also passes through the transparent gas nozzle 73, passes through the filters 81, 82, and 83, enters the photomultipliers 78, 79, and 80, and is detected.
It is used to observe the processing state of the sample 11.

In this tenth embodiment, when processing a multilayer LSI, for example, two photomultipliers are installed as secondary particle detectors above the transparent gas nozzle 73, and SiO2, which is an insulating film, and a wiring film are A filter corresponding to the fluorescence wavelength band of a certain Al reaction product is arranged, and the ion beam 2 is irradiated toward the multilayer LSI sample. When the surface of the sample 11 is irradiated with the ion beam 2, the multilayer L
A reaction product of the SI insulating film and a reaction product of the wiring film each emit unique fluorescence. Therefore, the fluorescence wavelength bands of the two types of reaction products are detected by a photomultiplier through filters, converted into voltage signals, and output.
By obtaining a secondary particle image using the voltage signals output from both photomultiples and monitoring this, it is possible to improve the accuracy of detection between layers in the sample.

A secondary particle image can be obtained by detecting sputtered particles emitted from the sample during processing in the same manner.

As can be seen from the above, according to the tenth embodiment, the reactive gas is uniformly supplied to the processing area on the sample 11, and the fluorescence of the reaction product or sputtered particles is used. Therefore, it becomes possible to achieve both high-intensity observation of secondary particle images.

[0147]

Effects of the Invention According to the invention described in claim 1 of the present invention as described above, the means for supplying gas is provided with means for uniformly spraying a reactive gas onto the processing area on the sample;
Since the secondary particle detector is equipped with a means for observing the secondary particle image at high brightness, reactive gas can be uniformly supplied to the processing area on the sample, and the secondary particle image can be observed at high brightness. effective.

According to the second aspect of the present invention, the gas nozzle is formed into a substantially disk shape, and the gas nozzle and the secondary particle detector are installed coaxially,
A passage for the charged beam is provided in the center of both members, a hollow chamber for the reactive gas is formed inside the gas nozzle, and the center of the gas nozzle is shaped so as not to prevent secondary particles from entering the secondary particle detector. A plurality of gas blowing pipes are attached to this gas nozzle at equal intervals in the circumferential direction.
The inlet side end of each gas blowing pipe is connected to the hollow chamber, and the outlet side end is arranged so as to be able to blow reactive gas toward the processing area on the sample. Even if the distance between the detection surface and the sample is long enough, the reactive gas can be uniformly supplied to the processing area on the sample through multiple gas blowing pipes installed at equal intervals in the circumferential direction. Furthermore, since the gas nozzle is formed in a shape that does not impede the incidence of secondary particles into the secondary particle detector, the yield of secondary particles ejected from the surface of the sample and incident on the secondary particle detector can be improved. is possible,
Therefore, it is possible to achieve both uniform supply of reactive gas to the processing area on the sample and high-intensity observation of secondary particle images.

Furthermore, according to the third aspect of the present invention, a gas supply pipe is installed above the secondary particle detector as a means for supplying a reactive gas, and a gas supply pipe is connected to the gas supply pipe toward the sample. A passage is provided for the charged beam to pass through and for spraying reactive gas from directly above the processing area on the sample. The reactive gas passes through the gas supply pipe and is blown from directly above the processing area on the sample through the passage provided in the gas supply pipe. This method also has the effect of achieving both uniform supply of reactive gas to the processing area on the sample and high-intensity observation of secondary particle images.

Furthermore, according to the fourth aspect of the present invention, since the secondary particle drawing electrode is disposed on the secondary particle detection surface side of the secondary particle detector,
As a result of being able to forcibly draw the secondary particles into the secondary particle detector, there is an effect that the brightness of the secondary particle image can be further increased.

[0151] According to the fifth aspect of the present invention, the gas nozzle is formed into a substantially disk shape, a passage through which the charged beam passes is provided in the center of the gas nozzle, and a reactive gas is provided inside the gas nozzle. A plurality of gas blowing pipes are attached to the gas nozzle at equal intervals in the circumferential direction, the inlet side end of each gas blowing pipe is communicated with the hollow chamber, and the outlet side end is connected to the hollow chamber. A secondary particle detector having a scintillator and a photomultiplier is placed in the space between the side of the gas nozzle and the sample. Even if the distance between the samples is increased and a secondary particle detector is placed in the space between the side of the gas nozzle and the sample, a plurality of secondary particle detectors may be attached to the gas nozzle at equal intervals in the circumferential direction, and Since the reactive gas can be uniformly sprayed onto the processing area on the sample through a gas blowing pipe arranged so that the reactive gas can be sprayed toward the processing area on the sample, secondary particles It is possible to uniformly supply the reactive gas to the processing area on the sample after securing a space for the secondary particles to enter the detector well. This has the effect of achieving both uniform supply of reactive gas to a region and high-intensity observation of secondary particle images.

Furthermore, according to the invention described in claim 6 of the present invention, a crank-shaped gas supply pipe is installed as a means for supplying the reactive gas, and the gas supply pipe is arranged on the sample side of the gas supply pipe. A scintillator is attached to the lower part of the vertical part, a half mirror is attached to the upper part of the scintillator, a photomulti is attached to the end of the horizontal part of the gas supply pipe opposite to the half mirror, and the scintillator and the half mirror are attached. The half mirror is provided with a hole through which the charged beam passes, and the scintillator is through which the charged beam passes and reactive gas is sprayed from directly above the processing area on the sample. Since the hole is provided and the reactive gas is sprayed from directly above the processing area on the sample, the reactive gas can be uniformly supplied to the processing area on the sample, and the gas is injected from the surface of the sample. Since the secondary particles are directly incident on the scintillator of the secondary particle detector, it is possible to observe the secondary particle image with high brightness. This has the effect of achieving both uniform supply of particles and high-intensity observation of secondary particle images.

Furthermore, according to the seventh aspect of the present invention, a light guide made of a transparent material, a gas nozzle made of a transparent material in a substantially disk shape, and a scintillator are coaxially arranged. A passage for the charged beam is provided in the center of the light guide and the gas nozzle, a hole is provided in the center of the scintillator for passing the charged beam and the reactive gas, and a fluorescent light is provided inside the light guide. A hollow chamber is formed in the gas nozzle to guide the fluorescent and reactive gas, and a plurality of gas outlets are provided at equal intervals in the circumferential direction in the center of the gas nozzle. The inlet of each gas outlet is communicated with the hollow chamber of the gas nozzle, the outlet is arranged so as to be able to blow a reactive gas toward the processing area on the sample, and a photomultiplier is installed on the side of the hollow chamber of the light guide. The secondary particle detector is configured such that the fluorescence emitted from the scintillator enters the photomultiple through the hollow chamber of the gas nozzle and the hollow chamber of the light guide, and the surface of the sample is irradiated with a charged beam. The secondary particles ejected from the sample directly enter the scintillator of the secondary particle detector, and the scintillator emits fluorescence, which is emitted into a hollow chamber formed inside a gas nozzle made of a transparent material. It passes through a hollow chamber formed inside a light guide made of a transparent material, and then enters a photomultiple provided on the side of the hollow chamber of this light guide, which converts it into voltage. is output as a voltage signal, a secondary particle image is obtained based on this output, the reactive gas is guided into the hollow chamber formed in the gas nozzle, and then into the center of the gas nozzle.
The reactive gas is sprayed uniformly onto the processing area on the sample through a plurality of gas outlets arranged at equal intervals in the circumferential direction so that the outlet can blow reactive gas toward the processing area on the sample. Therefore, the invention as set forth in claim 7 also has the effect of achieving both uniform supply of the reactive gas to the processing area on the sample and high-intensity observation of the secondary particle image.

According to the eighth aspect of the present invention, on the secondary particle detection surface side of the scintillator,
Since a secondary particle drawing electrode is provided to forcibly draw the secondary particles into the scintillator, there is an effect of further improving high-intensity observation of secondary particle images.

Furthermore, according to the ninth aspect of the present invention, the gas nozzle is formed of a transparent material into a substantially disk shape,
A passage for the charged beam is provided in the center of the gas nozzle, a hollow chamber is formed inside the gas nozzle, and a plurality of gas blow-off ports are provided at equal intervals in the circumferential direction around the passage. The inlet of the blowout port is communicated with the hollow chamber, the outlet is arranged so as to be able to blow reactive gas toward the processing area on the sample, and a photomultiplier is installed as a secondary particle detector above the gas nozzle. A filter is placed on the front side of the gas nozzle, which passes only the wavelength band of fluorescence unique to the sample material, which is generated from reaction products and sputtered particles emitted from the sample. Reactive gas can be uniformly supplied to the processing area on the sample through multiple gas outlets provided at intervals, and a gas nozzle made of a transparent material and a A plurality of photomultis, which are installed secondary particle detectors, and a filter placed in front of each photomultiply work together to enable high-intensity observation of secondary particle images.

According to the tenth aspect of the present invention, an etching gas is used as the reactive gas and is used in charged beam processing for locally reactive etching. According to the invention, since CVD gas is used as a reactive gas and is used for charged beam processing in which beam deposition is performed locally, each charged beam processing can be performed effectively.

[Brief explanation of the drawing]

FIG. 1 shows a first embodiment of the present invention, and is a block diagram schematically showing the configuration of the entire device.

FIG. 2 is a partially cutaway enlarged perspective view showing details of the microchannel plate and gas nozzle portion in the first embodiment.

FIG. 3 is a model diagram of secondary particle detection in the first embodiment.

FIG. 4 is a diagram showing the relationship between the angle of view of secondary particles incident on the microchannel plate and the yield in the first example.

FIG. 5 is a partially cutaway enlarged perspective view showing details of a microchannel plate, a gas nozzle, and a secondary particle drawing electrode portion, showing a second embodiment of the present invention.

FIG. 6 is a model diagram of secondary particle detection in the second embodiment.

FIG. 7 is a diagram showing the relationship between the angle of view of secondary particles incident on the microchannel plate and the yield in the second example.

FIG. 8 shows a third embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas nozzle and a microchannel plate portion.

FIG. 9 is a model diagram of secondary particle detection in the third embodiment.

FIG. 10 is a diagram showing the relationship between the angle of view of secondary particles incident on the microchannel plate and the yield in the third example.

FIG. 11 shows a fourth embodiment of the present invention and is a model diagram of secondary particle detection.

FIG. 12 is a diagram showing the relationship between the angle of view of secondary particles incident on the microchannel plate and the yield in the fourth example.

FIG. 13 shows a fifth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas supply pipe, a gas blowing pipe, and a microchannel plate portion.

FIG. 14 shows a sixth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas nozzle and a secondary particle detector portion.

FIG. 15 shows a seventh embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas nozzle, a secondary particle detector, and first and second lead-in electrodes.

FIG. 16 shows an eighth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a gas supply pipe and a secondary particle detector portion.

FIG. 17 shows a ninth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a light guide, a gas nozzle, and a secondary particle detector.

FIG. 18 shows a tenth embodiment of the present invention, and is a partially cutaway enlarged perspective view showing details of a photomultiplier having a gas nozzle and a filter for observing the processed state of a sample.

[Explanation of symbols]

1... Ion source, 2... Ion beam, 4... Focusing lens, 9
... Microchannel plate which is a secondary particle detector, 10... Gas nozzle, 11... Sample which is a workpiece, 1
2... Sample stage, 15... Gas supply pipe, 19... Gas cylinder, 20... Ion beam passage, 21... Secondary particle passage, 22... Gas passage, 23... Hollow chamber for reactive gas, 24... Gas passage , 25... gas blowing pipe, 26...
Gas outlet, 27...Secondary particle drawing electrode, 29
...Power source, 30...Gas nozzle, 31...Microchannel plate, 32...Sleeve, 34...Ion beam passage, 35...Gas passage, 36...Hollow chamber for reactive gas, 37
...Gas passage, 38...Gas blow-off pipe, 39...Secondary particle drawing electrode, 41...Power supply, 42...Micro channel plate, 43...Gas supply pipe, 45...Ion beam through hole, 46...Ion beam passage and gas Blowout pipe, 48...Scintillator, 49...Photomaru, 50
...Power supply, 51, 53...First and second lead-in electrodes, 54
, 55... Electrode, 56... Gas supply pipe, 57... Scintillator, 58... Hole, 59... Power supply, 60... Half mirror, 6
1... Hole, 62... Photomultiple, 63... Light guide, 64... Gas nozzle, 65... Ion beam passage, 66, 67... Hollow chamber, 68... Gas outlet, 69... Scintillator, 7
1...Power supply, 72...Photomaru, 73...Gas nozzle, 47
...Passway, 75...Hollow chamber, 76...Gas outlet, 77...
Reaction product or sputtered particles, 78-80...Photomul, 81-83...Filter.

Claims (11)

[Claims] Claim 1: A beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, means for supplying a reactive gas, and a secondary particle detector. In a charged beam processing apparatus that irradiates a charged beam onto a sample in a reactive gas atmosphere and performs a local reactive treatment at the irradiation part of the charged beam, the means for supplying the gas includes a means for supplying the gas to a processing area on the sample. A charged beam processing apparatus characterized in that a means for uniformly spraying a reactive gas onto the secondary particle detector is provided, and a means for observing a secondary particle image at high brightness is provided in the secondary particle detector. [Claim 2] A beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, a gas nozzle that supplies a reactive gas, and a secondary particle detector. , in a charged beam processing apparatus that irradiates a charged beam onto a sample in a reactive gas atmosphere and performs a reactive treatment locally at the irradiated part of the charged beam, the gas nozzle is formed into a substantially disk shape; A secondary particle detector is installed coaxially with the secondary particle detector, a passage for the charged beam is provided in the center of both members, a hollow chamber for the reactive gas is formed inside the gas nozzle, and the secondary particle detector is installed in the center of the gas nozzle. A plurality of gas blowing pipes are attached to this gas nozzle at equal intervals in the circumferential direction, and the inlet side end of each gas blowing pipe is connected to the hollow chamber. What is claimed is: 1. A charged beam processing apparatus, characterized in that the charged beam processing apparatus is connected to a charged beam processing apparatus, and has an outlet side end disposed such that a reactive gas can be sprayed toward a processing area on a sample. 3. A method comprising a beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, means for supplying a reactive gas, and a secondary particle detector. In a charged beam processing device that irradiates a sample with a charged beam in a reactive gas atmosphere and performs a local reactive treatment at the irradiation part of the charged beam, a reactive gas is supplied to the upper part of the secondary particle detector. A charging method characterized in that a gas supply pipe is installed as a means for processing the sample, and the gas supply pipe is provided with a passage through which a charged beam passes toward the sample and a reactive gas is sprayed from directly above the processing area on the sample. Beam processing equipment. 4. The charged beam processing apparatus according to claim 1, further comprising a secondary particle drawing electrode arranged on a side of the secondary particle detection surface of the secondary particle detector. 5. The method includes a beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, a gas nozzle that supplies a reactive gas, and a secondary particle detector. In a charged beam processing apparatus that irradiates a charged beam onto a sample in a reactive gas atmosphere and performs a local reactive treatment at the irradiated part of the charged beam, the gas nozzle is formed into an approximately disk shape, and the center of the gas nozzle is A passage for the charged beam to pass through is provided in the gas nozzle, a hollow chamber for the reactive gas is formed inside the gas nozzle, and a plurality of gas blowing pipes are attached to the gas nozzle at equal intervals in the circumferential direction. The inlet side end of the blowing pipe is connected to the hollow chamber, the outlet side end is arranged so as to be able to blow a reactive gas toward the processing area on the sample, and the space between the side of the gas nozzle and the sample is A charged beam processing device characterized in that a secondary particle detector having a scintillator and a photomultiplier is arranged. 6. The method includes a beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, means for supplying a reactive gas, and a secondary particle detector. , in a charged beam processing device that irradiates a charged beam onto a sample in a reactive gas atmosphere and performs a local reactive treatment at the irradiation part of the charged beam, the device is formed in a crank shape as a means for supplying the reactive gas. A scintillator is attached to the bottom of the vertical part of the gas supply pipe placed on the sample side, a half mirror is attached to the top of this, and a half mirror and a half mirror are attached to the horizontal part of the gas supply pipe. A photomultiple is attached to the opposite end, and the scintillator, half mirror, and photomultiple constitute a secondary particle detector, the half mirror is provided with a hole through which a charged beam passes, and the scintillator is charged with a A charged beam processing device characterized by having a hole through which a beam passes and through which a reactive gas is sprayed from directly above a processing area on a sample. 7. A beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, a gas nozzle that supplies a reactive gas, and a secondary particle detector. In a charged beam processing device that irradiates a sample with a charged beam in a reactive gas atmosphere and performs local reactive treatment at the irradiated part of the charged beam, a light guide made of a transparent material and a light guide made of a transparent material are coaxially connected. , a gas nozzle formed of a transparent material into a substantially disk shape and a scintillator are arranged, a passage for a charged beam is provided in the center of the light guide and the gas nozzle, and a path for the charged beam and a reactive beam are provided in the center of the scintillator. A hole for passing gas is provided, a hollow chamber for guiding fluorescence is formed inside the light guide, a hollow chamber for guiding fluorescence and reactive gas is formed inside the gas nozzle, and a circular hole is formed in the center of the gas nozzle. A plurality of gas outlets are provided at equal intervals in the circumferential direction, and the inlet of each gas outlet is communicated with the hollow chamber of the gas nozzle, so that the outlet can blow reactive gas toward the processing area on the sample. A photomultiplier is placed on the side of the hollow chamber of the light guide, and the fluorescent light emitted from the scintillator passes through the hollow chamber of the gas nozzle and the hollow chamber of the light guide to the photomultiple detector. A charged beam processing device characterized in that the charged beam processing device is configured such that the charged beam is incident on the charged beam. 8. The charged beam processing device according to claim 5, further comprising a secondary particle drawing electrode provided on the secondary particle detection surface side of the scintillator. 9. The method includes a beam source that generates a charged beam, a beam focusing optical system, a stage on which a sample as a workpiece is mounted, a gas nozzle that supplies a reactive gas, and a secondary particle detector. , in a charged beam processing device that irradiates a sample with a charged beam in a reactive gas atmosphere and locally performs a reactive treatment at the irradiated portion of the charged beam, the gas nozzle is formed of a transparent material into a substantially disk shape; A passage for the charged beam is provided in the center of the gas nozzle, a hollow chamber is formed inside the gas nozzle, and a plurality of gas blow-off ports are provided at equal intervals in the circumferential direction around the passage. The inlet of the blowout port is communicated with the hollow chamber, the outlet is arranged so as to be able to blow reactive gas toward the processing area on the sample, and a photomultiplier is installed as a secondary particle detector above the gas nozzle. A charged beam processing device characterized in that a filter is placed in front of the circle that allows only the fluorescence wavelength band unique to the sample material to pass through, which is generated from reaction products and sputtered particles emitted from the sample. 10. The charged beam according to claim 1, wherein the reactive gas is an etching gas, and the charged beam treatment is a charged beam treatment that locally performs reactive etching. Processing equipment. 11. The charged beam according to claim 1, wherein the reactive gas is a CVD gas, and the charged beam treatment is a charged beam treatment that locally performs beam deposition. Processing equipment.