JPH04360551A - Silicon surface analyzing method - Google Patents
Silicon surface analyzing methodInfo
- Publication number
- JPH04360551A JPH04360551A JP13637191A JP13637191A JPH04360551A JP H04360551 A JPH04360551 A JP H04360551A JP 13637191 A JP13637191 A JP 13637191A JP 13637191 A JP13637191 A JP 13637191A JP H04360551 A JPH04360551 A JP H04360551A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- oxide film
- silicon
- ozone
- hydrofluoric acid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 66
- 239000010703 silicon Substances 0.000 title claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 38
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 21
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005211 surface analysis Methods 0.000 claims description 6
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000012535 impurity Substances 0.000 abstract description 32
- 238000000354 decomposition reaction Methods 0.000 abstract description 26
- 238000004458 analytical method Methods 0.000 abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 15
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 description 22
- 239000002184 metal Substances 0.000 description 22
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 13
- 230000003647 oxidation Effects 0.000 description 13
- 238000007254 oxidation reaction Methods 0.000 description 13
- 239000007789 gas Substances 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 3
- 150000003376 silicon Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005247 gettering Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007405 data analysis Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は表面分析方法に関し、と
くにシリコン基板の金属不純物の分析法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface analysis method, and more particularly to a method for analyzing metal impurities in a silicon substrate.
【０００２】0002
【従来の技術】半導体装置の微細化、高密度化により半
導体プロセスからの汚染の低減が重要な問題となってい
る。この汚染、特に重金属汚染は半導体装置の性能を劣
化させるため極力排除しなければならない。このプロセ
スからの汚染量を判定するために各種の汚染検出のため
の表面分析方法が用いられている。2. Description of the Related Art As semiconductor devices become smaller and more densely packed, reducing contamination from semiconductor processes has become an important issue. This contamination, especially heavy metal contamination, degrades the performance of semiconductor devices and must be eliminated as much as possible. Various surface analysis methods for contamination detection are used to determine the amount of contamination from this process.
【０００３】従来の表面分析方法としては、シリコン基
板上の自然酸化膜あるいは熱酸化膜を弗化水素酸の蒸気
により分解してシリコンウェハ上に残留した金属不純物
を回収してこの回収液を原子吸光分析法により分析する
気相分解／原子吸光分析法（Ｖａｐｏｒ Ｐｈａｓｅ
Ｄｅｃｏｎｐｏｓｉｔｉｏｎ／Ａｔｏｍｉｃ Ａ
ｂｓｏｒｐｔｉｏｎ Ｓｐｅｃｔｒｏｓｃｏｐｙ：Ｖ
ＰＤ／ＡＡＳ法）やシリコン基板上に非常に小さな入射
角でＸ線を入射し、シリコン基板上に存在する金属等の
不純物から得られた蛍光Ｘ線により不純物の定量を行う
全反射蛍光Ｘ線法、シリコン基板に１次イオンを入射し
シリコン基板中の金属をスパッタ、イオン化してこの２
次イオンを検出するＳＩＭＳ（Ｓｅｃｏｎｄｅｒｙ
Ｉｏｎ ＭａｓｓＳｐｅｃｔｒｏｓｃｏｐｙ）等があ
る。A conventional surface analysis method involves decomposing a natural oxide film or a thermal oxide film on a silicon substrate using hydrofluoric acid vapor to recover metal impurities remaining on the silicon wafer, and then converting this recovered liquid into atomic Gas phase decomposition/atomic absorption spectrometry analysis using absorption spectrometry
Decomposition/Atomic A
bsorption spectroscopy:V
PD/AAS method) or total internal reflection fluorescent X-ray, in which X-rays are incident on a silicon substrate at a very small incident angle, and impurities are quantified using fluorescent X-rays obtained from impurities such as metals present on the silicon substrate. method, primary ions are injected into the silicon substrate, and the metal in the silicon substrate is sputtered and ionized.
SIMS (Secondary
ion mass spectroscopy), etc.
【０００４】現在の半導体プロセスにおいては各プロセ
ス毎の表面不純物を１０１０ａｔｏｍｓ／ｃｍ２ 以下
に抑える必要がある。このうち全反射蛍光Ｘ線法は非破
壊で分析が容易という利点はあるが、検出下限が１０１
１ａｔｏｍｓ／ｃｍ２ 程度であるため現状の分析方法
としては不向きである。一方ＳＩＭＳは検出感度は高い
が大がかりで高価な装置を必要とし、また得られたデー
タの解析にも熟練を要する。これらの理由から検出感度
が高く、操作も比較的簡便でかつデータ解析も容易であ
るＶＰＤ／ＡＡＳ法がよく用いられる。[0004] In current semiconductor processes, it is necessary to suppress surface impurities in each process to 1010 atoms/cm2 or less. Of these, the total internal reflection fluorescent X-ray method has the advantage of being non-destructive and easy to analyze, but its detection limit is 101.
Since it is about 1 atoms/cm2, it is unsuitable as the current analytical method. On the other hand, SIMS has high detection sensitivity, but requires large-scale and expensive equipment, and requires skill to analyze the obtained data. For these reasons, the VPD/AAS method is often used because it has high detection sensitivity, relatively simple operation, and easy data analysis.
【０００５】以降このＶＰＤ／ＡＡＳ法について図面を
参考にして説明する。図４はこの従来のＶＰＤ／ＡＡＳ
法による表面分析法における気相分解装置を表す模式図
である（出典：ＳＥＭＩテクノロジーシンポジウム８９
講演予稿集）。密閉容器４０１中に弗化水素酸４０２を
満たした弗酸容器４０３を配置する。この密閉容器４０
１内に、表面がシリコン酸化膜４０４で覆われたシリコ
ン基板４０５がウェハーキャリア（図示せず）により保
持される。弗化水素酸４０２の蒸気がシリコン基板４０
５表面のシリコン酸化膜４０４を分解し、分解液４０６
はシリコン基板表面をつたわり回収容器４０７に集めら
れる。この回収された分解液４０６をフレームレス原子
吸光装置を用い分解液４０６中の金属不純物を分析する
。The VPD/AAS method will be explained below with reference to the drawings. Figure 4 shows this conventional VPD/AAS
(Source: SEMI Technology Symposium 89)
Lecture proceedings). A hydrofluoric acid container 403 filled with hydrofluoric acid 402 is placed in a closed container 401 . This airtight container 40
1, a silicon substrate 405 whose surface is covered with a silicon oxide film 404 is held by a wafer carrier (not shown). The vapor of hydrofluoric acid 402 is applied to the silicon substrate 40.
5 decomposes the silicon oxide film 404 on the surface and removes the decomposition liquid 406.
is collected in a recovery container 407 through the silicon substrate surface. The recovered decomposition liquid 406 is analyzed for metal impurities in the decomposition liquid 406 using a flameless atomic absorption spectrometer.
【０００６】[0006]
【発明が解決しようとする課題】しかしこのＶＰＤ／Ａ
ＡＳ法ではシリコン基板上に形成された酸化膜を分解し
て分析する手法であるため、シリコン基板中の分析には
不向きである。シリコン基板のゲッタリングの評価等を
行う場合にはシリコン基板中の分析が必要となる。ＶＰ
Ｄ／ＡＡＳ法によってシリコン基板中の不純物を分析す
るためには、シリコン基板上に酸化膜を形成する必要が
ある。この酸化膜の形成方法としては現在熱酸化法が用
いられている。しかし熱酸化法を用いるとシリコン基板
中の金属不純物は再配列を起こし、例えば銅は酸化膜中
には残留せずシリコン基板中に拡散してしまい、実際存
在しているにも拘らずＰＶＤ／ＡＡＳ法では検出されな
いという問題がある。[Problem to be solved by the invention] However, this VPD/A
Since the AS method is a method of decomposing and analyzing an oxide film formed on a silicon substrate, it is not suitable for analyzing silicon substrates. In order to evaluate the gettering of a silicon substrate, it is necessary to analyze the inside of the silicon substrate. V.P.
In order to analyze impurities in a silicon substrate by the D/AAS method, it is necessary to form an oxide film on the silicon substrate. A thermal oxidation method is currently used as a method for forming this oxide film. However, when thermal oxidation is used, metal impurities in the silicon substrate rearrange; for example, copper does not remain in the oxide film but diffuses into the silicon substrate, and even though it actually exists, the metal impurities in the silicon substrate rearrange. The problem with the AAS method is that it cannot be detected.
【０００７】[0007]
【課題を解決するための手段】本発明のシリコン基板の
金属不純物分析方法は、オゾンあるいは酸素プラズマを
用い常温で熱酸化膜を形成する工程と、ＶＰＤ／ＡＡＳ
法により常温形成した酸化膜中の金属不純物を分析する
工程を有している。[Means for Solving the Problems] The method for analyzing metal impurities in a silicon substrate of the present invention includes a step of forming a thermal oxide film at room temperature using ozone or oxygen plasma, and a step of forming a thermal oxide film at room temperature using ozone or oxygen plasma.
The method includes a step of analyzing metal impurities in the oxide film formed at room temperature by the method.
【０００８】[0008]
【作用】一般に金属不純物のシリコン酸化膜中の拡散係
数は温度の関数でありこれは絶対温度の指数関数により
決定される。よって、通常の１０００℃近辺の温度で酸
化した場合に酸化膜形成時にシリコン基板中に拡散して
しまうような不純物であっても、酸化温度を常温にする
ことでシリコン基板中への拡散を防ぐことができる。[Operation] Generally, the diffusion coefficient of metal impurities in a silicon oxide film is a function of temperature, and this is determined by an exponential function of absolute temperature. Therefore, even if impurities would diffuse into the silicon substrate during oxide film formation if oxidized at the normal temperature of around 1000°C, by setting the oxidation temperature to room temperature, diffusion into the silicon substrate can be prevented. be able to.
【０００９】通常の熱酸化法においては常温での酸化速
度は非常に小さく長時間の酸化を行っても常温で形成さ
れる酸化膜厚はほとんど初期の自然酸化膜厚と同程度で
ある。これは酸化種のシリコン酸化膜／シリコン基板界
面での反応が遅いため起こる現象である。しかし、例え
ば、活性化した酸素プラズマやオゾンを用いることで常
温でも酸化膜を形成することができる。In the normal thermal oxidation method, the oxidation rate at room temperature is very low, and even if oxidation is carried out for a long time, the thickness of the oxide film formed at room temperature is almost the same as the initial natural oxide film thickness. This phenomenon occurs because the reaction of oxidized species at the silicon oxide film/silicon substrate interface is slow. However, for example, by using activated oxygen plasma or ozone, an oxide film can be formed even at room temperature.
【００１０】このようにして低温で形成された酸化膜中
に含まれる金属不純物は酸化前のシリコン基板中に含ま
れていた金属不純物を忠実に反映するため、この低温形
成された酸化膜中の不純物をＶＰＤ／ＡＡＳ法により分
析することでシリコン基板中の金属不純物の分析が可能
となる。The metal impurities contained in the oxide film formed at low temperature in this way faithfully reflect the metal impurities contained in the silicon substrate before oxidation. By analyzing impurities using the VPD/AAS method, it becomes possible to analyze metal impurities in a silicon substrate.
【００１１】[0011]
【実施例】次に本発明を図面を参照して説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【００１２】図１は本発明のシリコン基板の分析方法の
一実施例における気相分解装置を現す模式図である。シ
リコン基板１０１はウェハーキャリア（図示せず）に保
持され分解容器１０２中におかれる。この時シリコン基
板１０１上には熱酸化膜等の酸化膜は形成されていない
。この分解容器１０２中には弗化水素酸１０３を満たし
た弗酸容器１０４が配置されている。また分解容器１０
２中にはオゾン発生装置１０５より生成したオゾンが導
入されている。FIG. 1 is a schematic diagram showing a gas phase decomposition apparatus in an embodiment of the silicon substrate analysis method of the present invention. A silicon substrate 101 is held by a wafer carrier (not shown) and placed in a decomposition container 102. At this time, no oxide film such as a thermal oxide film is formed on the silicon substrate 101. A hydrofluoric acid container 104 filled with hydrofluoric acid 103 is placed in the decomposition container 102 . Also, the decomposition container 10
2, ozone generated from an ozone generator 105 is introduced.
【００１３】分析の開始時点においてはシリコン基板１
０１上には酸化膜は形成されていないがオゾン発生装置
１０５より導入されたオゾンによりシリコン基板１０１
上にシリコン酸化膜が形成され、このシリコン酸化膜中
にシリコン基板１０１中の金属不純物が再配列すること
なく取り込まれる。オゾンにより形成されたこのシリコ
ン酸化膜は弗化水素酸１０３の蒸気により分解され分解
液１０６が回収容器１０７に回収される。この回収され
た分解液１０６をフレームレス原子吸光法により分析す
ることによりシリコン基板１０１中の金属不純物濃度を
正確に定量することが可能となる。At the start of the analysis, the silicon substrate 1
Although no oxide film is formed on the silicon substrate 101, the ozone introduced from the ozone generator 105
A silicon oxide film is formed thereon, and metal impurities in the silicon substrate 101 are taken into this silicon oxide film without being rearranged. This silicon oxide film formed by ozone is decomposed by the vapor of hydrofluoric acid 103, and a decomposition liquid 106 is collected in a collection container 107. By analyzing the recovered decomposed liquid 106 by flameless atomic absorption spectrometry, it becomes possible to accurately quantify the concentration of metal impurities in the silicon substrate 101.
【００１４】ある金属汚染の存在するプロセスを行った
シリコン基板中の金属不純物分析を従来の熱酸化を行い
その酸化膜中の不純物をＶＰＤ／ＡＡＳ法により分析し
た場合と、本実施例に従い分析した場合の表面不純物濃
度の比較を図２に示す。熱酸化は１０００℃酸素雰囲気
中で１０分間行い、そのときの酸化膜厚は約２０ナノメ
ータである。一方オゾンを用いた本発明による分析はち
ょうどシリコン基板が１０ナノメーター分エッチングさ
れるように条件を選んだ。[0014] Metal impurity analysis in a silicon substrate subjected to a process in which certain metal contamination exists is carried out by conventional thermal oxidation and the impurities in the oxide film are analyzed by VPD/AAS method, and analyzed according to this example. FIG. 2 shows a comparison of surface impurity concentrations in these cases. Thermal oxidation is performed in an oxygen atmosphere at 1000° C. for 10 minutes, and the oxide film thickness at that time is about 20 nanometers. On the other hand, in the analysis according to the present invention using ozone, conditions were selected so that the silicon substrate was etched by 10 nanometers.
【００１５】図２においては本発明による分析法による
表面不純物濃度が１になるように値を規格化している。
図２の結果により熱酸化法による従来法は本実施例に於
ける分析法よりも感度が低く、特に銅においては従来法
では本発明による方法に比べ感度が約５分の１となって
いる。In FIG. 2, the values are normalized so that the surface impurity concentration according to the analysis method according to the present invention is 1. The results shown in Figure 2 show that the conventional method using thermal oxidation has lower sensitivity than the analytical method used in this example, and especially for copper, the sensitivity of the conventional method is about one-fifth that of the method of the present invention. .
【００１６】次に本発明の別の実施例について図面を参
照して説明する。図３は本発明の一実施例のシリコン基
板の表面分析方法における気相分解装置を表す模式図で
ある。先の実施例と同様にシリコン基板３０１はウェハ
ーキャリア（図示せず）に保持され分解容器３０２中に
保持される。このシリコン基板３０１上には分解容器３
０２外部から紫外線ランプ３０３により耐腐食性のある
例えばサファイア製の窓３０４を通して紫外線が照射さ
れており、同時に分解容器３０２中には酸素ボンベ３０
５より酸素が導入されている。この分解容器３０２中に
は弗化水素酸３０６を満たした弗酸容器３０７が配置さ
れている。Next, another embodiment of the present invention will be described with reference to the drawings. FIG. 3 is a schematic diagram showing a gas phase decomposition apparatus in a silicon substrate surface analysis method according to an embodiment of the present invention. Similar to the previous embodiment, a silicon substrate 301 is held in a wafer carrier (not shown) and held in a decomposition vessel 302. On this silicon substrate 301 is a decomposition vessel 3.
02 Ultraviolet light is irradiated from outside by an ultraviolet lamp 303 through a corrosion-resistant window 304 made of, for example, sapphire, and at the same time an oxygen cylinder 30 is placed inside the decomposition vessel 302.
Oxygen is introduced from 5. A hydrofluoric acid container 307 filled with hydrofluoric acid 306 is placed in the decomposition container 302 .
【００１７】分解初期段階においてこのシリコン基板３
０１上にはシリコン酸化膜は形成されていないが、分解
容器中に導入された酸素が紫外線により励起してオゾン
を発生してシリコン基板３０１と反応し、シリコン酸化
膜を形成する。この時シリコン酸化膜は紫外線の照射さ
れている片面のみに形成される。このシリコン酸化膜は
弗化水素酸３０６から発生した弗酸蒸気により分解され
、分解液３０８は回収容器３０９中に回収される。この
回収液中の金属不純物濃度をフレームレス原子吸光法に
より分析することによりシリコン基板中の金属不純物密
度の定量が可能となる。At the initial stage of decomposition, this silicon substrate 3
Although no silicon oxide film is formed on the silicon substrate 301, oxygen introduced into the decomposition vessel is excited by ultraviolet rays to generate ozone, which reacts with the silicon substrate 301 to form a silicon oxide film. At this time, a silicon oxide film is formed only on one side that is irradiated with ultraviolet rays. This silicon oxide film is decomposed by hydrofluoric acid vapor generated from hydrofluoric acid 306, and a decomposed liquid 308 is collected into a collection container 309. By analyzing the metal impurity concentration in this recovered liquid by flameless atomic absorption spectrometry, it becomes possible to quantify the metal impurity density in the silicon substrate.
【００１８】本実施例においては同時に一枚のシリコン
基板の分析しかできないという欠点はあるが、シリコン
基板片面のみの分析が可能となるため両面の状態の異な
るシリコン基板の分析や、シリコン基板裏面におけるゲ
ッタリング能力の評価等に有効である。Although this embodiment has the disadvantage that only one silicon substrate can be analyzed at the same time, it is possible to analyze only one side of the silicon substrate, so it is possible to analyze silicon substrates with different conditions on both sides, or to analyze the back side of the silicon substrate. This is effective for evaluating gettering ability.
【００１９】本発明のさらに別の実施例について説明す
る。先の２つの実施例においてはオゾンによる酸化と弗
化水素酸蒸気による酸化膜の分解を一つの装置内で行っ
ていたが、本実施例では酸化のための装置と酸化膜の分
解装置とが別れているという特徴がある。まずシリコン
基板をオゾンを導入した容器（図示せず）中で所望の膜
厚の酸化膜が得られるまで酸化する。次にこのシリコン
基板を図４に示されるような従来の気相分解装置を用い
オゾンにより低温酸化された酸化膜中の金属不純物を分
解し、分解液を回収してフレームレス原子吸光法により
分析を行う。Another embodiment of the present invention will now be described. In the previous two embodiments, the oxidation by ozone and the decomposition of the oxide film by hydrofluoric acid vapor were performed in one device, but in this embodiment, the oxidation device and the oxide film decomposition device are combined. There is a characteristic that they are separated. First, a silicon substrate is oxidized in a container (not shown) into which ozone is introduced until an oxide film of a desired thickness is obtained. Next, this silicon substrate is oxidized at low temperature with ozone using a conventional gas phase decomposition apparatus as shown in Figure 4 to decompose metal impurities in the oxide film, and the decomposed liquid is recovered and analyzed by flameless atomic absorption spectrometry. I do.
【００２０】本実施例によればオゾンによる酸化と弗化
水素酸蒸気による分解とを繰り返し行うことが可能であ
り、シリコン基板中の金属不純物の深さ方向分布を得る
ことができる。According to this embodiment, oxidation by ozone and decomposition by hydrofluoric acid vapor can be repeated, and the depth distribution of metal impurities in the silicon substrate can be obtained.
【００２１】以上シリコン基板の酸化剤としてオゾンを
用いた場合について説明したが、同様な酸化効果を持つ
酸素プラズマを用いても同様な効果が得られる。また分
析手法としてフレームレス原子吸光法について述べたが
イオン結合プラズマ法（ＩＣＰ法）等の分析手法を用い
てもよい。Although the case where ozone is used as an oxidizing agent for a silicon substrate has been described above, a similar effect can be obtained by using oxygen plasma which has a similar oxidizing effect. Although flameless atomic absorption spectrometry has been described as an analysis method, an analysis method such as ion-coupled plasma method (ICP method) may also be used.
【００２２】[0022]
【発明の効果】以上説明したように本発明においては、
シリコン基板の分析においてシリコン基板をオゾンある
いは酸素プラズマによって常温で酸化しこのシリコン酸
化膜を弗化水素酸蒸気により分解することで、シリコン
基板中の金属不純物を忠実に定量することが可能となる
効果を有する。[Effects of the Invention] As explained above, in the present invention,
In the analysis of silicon substrates, by oxidizing the silicon substrate with ozone or oxygen plasma at room temperature and decomposing this silicon oxide film with hydrofluoric acid vapor, it is possible to faithfully quantify metal impurities in the silicon substrate. has.
【図１】本発明のシリコン基板の分析方法の一実施例に
おける気相分解装置を表す模式図。FIG. 1 is a schematic diagram showing a gas phase decomposition apparatus in an embodiment of the silicon substrate analysis method of the present invention.
【図２】本発明と従来技術による分析結果を比較した図
。FIG. 2 is a diagram comparing the analysis results of the present invention and the conventional technology.
【図３】本発明のシリコン基板の分析方法の別の実施例
における気相分解装置を表す模式図。FIG. 3 is a schematic diagram showing a gas phase decomposition apparatus in another embodiment of the silicon substrate analysis method of the present invention.
【図４】従来のシリコン基板の分析方法における気相分
解装置を表す模式図。FIG. 4 is a schematic diagram showing a gas phase decomposition apparatus in a conventional silicon substrate analysis method.
【符号の説明】
１０１，３０１，４０５ シリコン基板１０２，
３０２ 分解容器
４０１ 密閉容器
１０３，３０６，４０２ 弗化水素酸１０４，３
０７，４０３ 弗酸容器１０５ オゾン発
生装置
３０３ 紫外線ランプ
３０４ 窓
３０５ 酸素ボンベ
４０４ シリコン酸化膜[Explanation of symbols] 101, 301, 405 Silicon substrate 102,
302 Decomposition container 401 Closed container 103, 306, 402 Hydrofluoric acid 104, 3
07,403 Hydrofluoric acid container 105 Ozone generator 303 Ultraviolet lamp 304 Window 305 Oxygen cylinder 404 Silicon oxide film
Claims (1)
の酸化膜を分解してその分解液を分析するシリコン表面
分析において、オゾンあるいは酸素プラズマ雰囲気中で
シリコン基板を酸化して酸化膜を形成し、この酸化膜を
弗化水素酸蒸気により分解し、その分解液を分析するこ
とを特徴とするシリコン表面分析方法。[Claim 1] In silicon surface analysis in which an oxide film on a silicon substrate is decomposed with hydrofluoric acid vapor and the decomposed solution is analyzed, an oxide film is formed by oxidizing the silicon substrate in an ozone or oxygen plasma atmosphere. , a silicon surface analysis method characterized by decomposing this oxide film with hydrofluoric acid vapor and analyzing the decomposed liquid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13637191A JP2967608B2 (en) | 1991-06-07 | 1991-06-07 | Silicon surface analysis method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13637191A JP2967608B2 (en) | 1991-06-07 | 1991-06-07 | Silicon surface analysis method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04360551A true JPH04360551A (en) | 1992-12-14 |
| JP2967608B2 JP2967608B2 (en) | 1999-10-25 |
Family
ID=15173604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13637191A Expired - Fee Related JP2967608B2 (en) | 1991-06-07 | 1991-06-07 | Silicon surface analysis method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2967608B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016039032A1 (en) * | 2014-09-11 | 2016-03-17 | 株式会社 イアス | Silicon substrate analysis method |
-
1991
- 1991-06-07 JP JP13637191A patent/JP2967608B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016039032A1 (en) * | 2014-09-11 | 2016-03-17 | 株式会社 イアス | Silicon substrate analysis method |
| JP2016057230A (en) * | 2014-09-11 | 2016-04-21 | 株式会社 イアス | Analytic method of silicon substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2967608B2 (en) | 1999-10-25 |
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