JPH04355041A - Secondary electron detector - Google Patents

Secondary electron detector

Info

Publication number
JPH04355041A
JPH04355041A JP3155983A JP15598391A JPH04355041A JP H04355041 A JPH04355041 A JP H04355041A JP 3155983 A JP3155983 A JP 3155983A JP 15598391 A JP15598391 A JP 15598391A JP H04355041 A JPH04355041 A JP H04355041A
Authority
JP
Japan
Prior art keywords
electron
detector
type detector
sample
amplified
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3155983A
Other languages
Japanese (ja)
Inventor
Masanao Hotta
昌直 堀田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Elionix Kk
Original Assignee
Elionix Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Elionix Kk filed Critical Elionix Kk
Priority to JP3155983A priority Critical patent/JPH04355041A/en
Publication of JPH04355041A publication Critical patent/JPH04355041A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To facilitate amplification so as to improve detecting efficiency by setting up a channel thoron in an electrically insulated condition before an Everhart-Thornley type detector. CONSTITUTION:Before an Everhart-Thornley(ET) type detector constituted of a scintillator 6, light guide 7, photomultiplier tube 8, etc., a channel thoron 12 is provided. A secondary electron 3 generated from a sample 2 by an incident electron 1 is amplified to about 10,000 times by the channel thoron 12 and emitted into a vacuum, and the secondary electron with its potential becoming an earth level is further amplified to about 10,000 times by the ET type detector in a rear stage. Next, the electron is further amplified by using an amplifier 9 in a frequency band of about 5MHz. In this way, a detector of high detecting efficiency with easy amplification is obtained.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、走査電子顕微鏡などに
用いられる二次電子検出器に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a secondary electron detector used in scanning electron microscopes and the like.

【0002】0002

【従来の技術】図2は、走査電子顕微鏡などの二次電子
検出器として一般的に使われているEverhart−
Thornley型(以下、ET型と略記する)検出器
の構成を示す断面図で、図において、1は入射電子、2
は試料、3は二次電子、4はアースキャップ、5は高圧
コロナリング、6はシンチレーター、7はライトガイド
、8は光電子増倍管、9はアンプ、10は後段加速電源
、11は走査電子顕微鏡の鏡筒を示す。
2. Description of the Related Art FIG. 2 shows an Everhart
This is a cross-sectional view showing the configuration of a Thornley type (hereinafter abbreviated as ET type) detector. In the figure, 1 indicates incident electrons, 2
is a sample, 3 is a secondary electron, 4 is a ground cap, 5 is a high-pressure corona ring, 6 is a scintillator, 7 is a light guide, 8 is a photomultiplier tube, 9 is an amplifier, 10 is a post-acceleration power supply, 11 is a scanning electron The lens barrel of the microscope is shown.

【0003】図2に示すET型検出器は良く知られてお
り、詳細な説明はここでは省略するが、試料に照射され
る入射電子1により、試料から発生する二次電子が、シ
ンチレーター6に印加された後段加速電圧の電界により
、集速,加速され、シンチレーター6に衝突して発光す
る。そして、この光がライトガイド7により真空外に導
かれ、光電子増倍管8によって電気信号に変換され、ア
ンプ9で増幅されてディスプレイ側(図示せず)に導か
れる。
The ET type detector shown in FIG. 2 is well known and a detailed explanation will be omitted here, but incident electrons 1 irradiating the sample cause secondary electrons generated from the sample to enter the scintillator 6. It is accelerated and accelerated by the electric field of the applied post-acceleration voltage, collides with the scintillator 6, and emits light. This light is guided outside the vacuum by a light guide 7, converted into an electrical signal by a photomultiplier tube 8, amplified by an amplifier 9, and guided to the display side (not shown).

【0004】図3は、いわゆるマルチ・チャンネルプレ
ート型(以下、MCP型と略記する)検出器の構成を示
す断面図で、図において、41はマルチ・チャンネルプ
レート、42は集電電極、43は絶縁アンプを示す。M
CP41は、その経が0.1mmφ,長さが10mm程
度の電子増倍管を多数個蜂の巣状に密集して形成したも
のであり、二次電子を引き寄せるため各電子増倍管の入
力側は100V程度の電位、出口側は更に高電位を印加
して、二次電子を直接増幅している。
FIG. 3 is a sectional view showing the configuration of a so-called multi-channel plate type (hereinafter abbreviated as MCP type) detector. In the figure, 41 is a multi-channel plate, 42 is a current collecting electrode, and 43 is a current collector electrode. An isolated amplifier is shown. M
CP41 is made up of a large number of electron multiplier tubes with a diameter of 0.1 mmφ and a length of about 10 mm densely arranged in a honeycomb shape.In order to attract secondary electrons, the input side of each electron multiplier tube is A potential of about 100 V is applied, and an even higher potential is applied to the exit side to directly amplify the secondary electrons.

【0005】[0005]

【発明が解決しようとする課題】解決しようとする問題
点は、ET型検出器では検出効率を思うように向上させ
ることができず、MCP型検出器ではアンプを用いた高
周波帯域の信号の増幅が難しいという点にある。
[Problem to be solved by the invention] The problem to be solved is that the detection efficiency cannot be improved as desired with the ET type detector, and with the MCP type detector, the signal in the high frequency band is amplified using an amplifier. The point is that it is difficult.

【0006】すなわち、図2に示すET型検出器では、
高圧コロナリング5に10kV程度の電圧が印加される
ため、アースキャップ4との放電を防ぐ隙間を設けてお
く必要があるなど、構造上の制約からある程度以上小型
化することができず、検出効率を向上させるために試料
2に近接させて検出器を設置しようとしても電子レンズ
(図示せず)等が邪魔になり、近づけることができず、
検出器を試料2に近づけようとすればレンズ性能等を犠
牲にしなければならない。
That is, in the ET type detector shown in FIG.
Since a voltage of about 10 kV is applied to the high-voltage corona ring 5, it is necessary to provide a gap with the ground cap 4 to prevent electrical discharge. Due to structural constraints, it is not possible to reduce the size beyond a certain level, resulting in detection efficiency. Even if an attempt was made to install the detector close to the sample 2 in order to increase
If the detector is to be brought closer to the sample 2, lens performance, etc. must be sacrificed.

【0007】また、図3に示すMCP型検出器では、試
料2の直ぐ上に検出器を設置することができるが、出力
コレクタ(集電電極42)が2〜4kVの高圧であるた
め、アンプを用いた高周波帯域の信号の増幅が難しく、
汎用性に乏しいなどの問題があった。
Furthermore, in the MCP type detector shown in FIG. 3, the detector can be installed directly above the sample 2, but since the output collector (collecting electrode 42) has a high voltage of 2 to 4 kV, the amplifier It is difficult to amplify high frequency band signals using
There were problems such as lack of versatility.

【0008】本発明はかかる課題を解決するためになさ
れたもので、高い検出効率を持ち増幅が容易な二次電子
検出器を得ることを目的としている。
[0008] The present invention has been made to solve the above problems, and an object of the present invention is to obtain a secondary electron detector that has high detection efficiency and is easy to amplify.

【0009】[0009]

【課題を解決するための手段】本発明に係わる二次電子
検出器は、ET型検出器の前に電気的に絶縁させた状態
でチャンネルトロンを設置し、このチャンネルトロンの
電子取入口を試料近傍に開口させて試料から発生した二
次電子をチャンネルトロンで増幅してから一端真空中へ
放出させ、さらにET型検出器で増幅することを特徴と
している。
[Means for Solving the Problems] A secondary electron detector according to the present invention has a channeltron installed in front of an ET type detector in an electrically insulated state, and an electron inlet of the channeltron is connected to the sample. It is characterized in that secondary electrons generated from the sample are amplified by a channeltron with an opening in the vicinity, then emitted into a vacuum at one end, and further amplified by an ET type detector.

【0010】0010

【作用】ET型検出器の前に設置するチャンネルトロン
は、素子寸法を10mmφ以下とできるので、試料近傍
に電子取入口を設けることができ、且つチャンネルトロ
ンである程度増幅して真空中に放出された二次電子を更
にET型検出器で増幅するので、光電子増倍管の負担を
軽減できると共に、アンプによる高周波帯域の信号の増
幅も容易となる。
[Operation] The channeltron installed in front of the ET type detector can have an element size of 10 mm or less, so an electron intake port can be provided near the sample. Since the secondary electrons are further amplified by the ET type detector, the load on the photomultiplier tube can be reduced, and the amplifier can easily amplify signals in the high frequency band.

【0011】[0011]

【実施例】以下、本発明の一実施例を図面を用いて説明
する。図1は本発明の一実施例を示す断面図で、図にお
いて、1は入射電子、2は試料、3は二次電子、4はア
ースキャップ、5は高圧コロナリング、6はシンチレー
ター、7はライトガイド、8は光電子増倍管、9はアン
プ、10は後段加速電源、11は鏡筒、12はチャンネ
ルトロンを示す。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing one embodiment of the present invention. In the figure, 1 is an incident electron, 2 is a sample, 3 is a secondary electron, 4 is an earth cap, 5 is a high-pressure corona ring, 6 is a scintillator, and 7 is a A light guide, 8 a photomultiplier tube, 9 an amplifier, 10 a post-acceleration power source, 11 a lens barrel, and 12 a channeltron.

【0012】チャンネルトロン12は良く知られている
ように、電子増倍管の一つであり、一般的に約6mmφ
程度の管の内面に電子増倍面をコーティングしたもので
ある。そして、チャンネルトロン12はその電子取入口
に100V程度の電位が印加され、電子放出口には3k
V程度の高電位が印加されるため、アンプを用いた信号
の増幅が難しい。
As is well known, the channeltron 12 is a type of electron multiplier tube, and generally has a diameter of about 6 mm.
The inner surface of the tube is coated with an electron-multiplying surface. Channeltron 12 has a potential of about 100V applied to its electron intake port, and a potential of 3k to its electron emission port.
Since a high potential of about V is applied, it is difficult to amplify the signal using an amplifier.

【0013】本発明はチャンネルトロン12で1万倍程
度に増幅されて真空中に放出され、電位が接地レベルと
なった二次電子を、更に後段のET型検出器で増幅する
こととし、光電子増倍管8の負担を軽減し、さらに、光
電子増倍管8で1万倍程度に増幅した信号を、周波数帯
域が5MHz程度のアンプ9を用いて、更に増幅するこ
とができる。
In the present invention, the secondary electrons are amplified by about 10,000 times in the channeltron 12 and emitted into the vacuum, and the potential becomes the ground level. The load on the multiplier tube 8 can be reduced, and the signal amplified by about 10,000 times by the photomultiplier tube 8 can be further amplified using the amplifier 9 whose frequency band is about 5 MHz.

【0014】また、本発明ではチャンネルトロン12の
電子取入口の電位を変化させる(電位を負とする場合も
含む)ことにより、試料2から発生する電子を、電位別
に選択して取り入れることができ、例えば反射電子だけ
を取り入れて反射電子検出器とする等の操作が容易に行
えるようになる。
Furthermore, in the present invention, by changing the potential of the electron intake port of the channeltron 12 (including the case where the potential is made negative), electrons generated from the sample 2 can be selectively taken in according to potential. For example, operations such as taking in only backscattered electrons and using it as a backscattered electron detector can be easily performed.

【0015】[0015]

【発明の効果】以上説明したように本発明は、増幅が容
易で検出効率の高い二次電子検出器が得られるという利
点がある。
As explained above, the present invention has the advantage that a secondary electron detector with easy amplification and high detection efficiency can be obtained.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明の一実施例を示す断面図である。FIG. 1 is a sectional view showing an embodiment of the present invention.

【図2】ET型検出器を示す断面図である。FIG. 2 is a sectional view showing an ET type detector.

【図3】MPC型検出器を示す断面図である。FIG. 3 is a sectional view showing an MPC type detector.

【符号の説明】[Explanation of symbols]

1  入射電子 2  試料 3  二次電子 6  シンチレーター 8  光電子増倍管 9  アンプ 12  チャンネルトロン 1 Incident electron 2 Sample 3 Secondary electrons 6.Scintillator 8 Photomultiplier tube 9 Amplifier 12 Channeltron

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  走査電子顕微鏡などで使用される二次
電子検出器において、シンチレーター,ライトガイド,
光電子増倍管などで構成されるEverhart−Th
ornley型検出器の前に、電気的に絶縁させた状態
でチャンネルトロンを設置し、このチャンネルトロンの
電子取入口を試料近傍に開口させ、試料から発生した二
次電子を該チャンネルトロンで増幅してから一端真空中
へ放出させ、放出した二次電子を上記Everhart
−Thornley型検出器で受けて増幅することを特
徴とする二次電子検出器。
[Claim 1] A secondary electron detector used in a scanning electron microscope etc. includes a scintillator, a light guide,
Everhart-Th, which consists of photomultiplier tubes, etc.
An electrically insulated channeltron is installed in front of the ornley type detector, the electron intake port of this channeltron is opened near the sample, and the secondary electrons generated from the sample are amplified by the channeltron. After that, the emitted secondary electrons are emitted into a vacuum, and the emitted secondary electrons are
- A secondary electron detector characterized in that the secondary electrons are received and amplified by a Thornley type detector.
JP3155983A 1991-05-31 1991-05-31 Secondary electron detector Pending JPH04355041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3155983A JPH04355041A (en) 1991-05-31 1991-05-31 Secondary electron detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3155983A JPH04355041A (en) 1991-05-31 1991-05-31 Secondary electron detector

Publications (1)

Publication Number Publication Date
JPH04355041A true JPH04355041A (en) 1992-12-09

Family

ID=15617791

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3155983A Pending JPH04355041A (en) 1991-05-31 1991-05-31 Secondary electron detector

Country Status (1)

Country Link
JP (1) JPH04355041A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000514238A (en) * 1998-03-03 2000-10-24 エテック システムズ インコーポレイテッド Electron beam microcolumn as a general-purpose scanning electron microscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000514238A (en) * 1998-03-03 2000-10-24 エテック システムズ インコーポレイテッド Electron beam microcolumn as a general-purpose scanning electron microscope

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