JPH04352471A - Infrared rays detector - Google Patents
Infrared rays detectorInfo
- Publication number
- JPH04352471A JPH04352471A JP3127279A JP12727991A JPH04352471A JP H04352471 A JPH04352471 A JP H04352471A JP 3127279 A JP3127279 A JP 3127279A JP 12727991 A JP12727991 A JP 12727991A JP H04352471 A JPH04352471 A JP H04352471A
- Authority
- JP
- Japan
- Prior art keywords
- light
- film
- insulating film
- layer insulating
- light shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000001514 detection method Methods 0.000 claims abstract description 16
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000005083 Zinc sulfide Substances 0.000 description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 description 8
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は赤外線検知装置に係り、
特に高空間分解能化を図った表面入射型の赤外線検知装
置に関する。[Industrial Application Field] The present invention relates to an infrared detection device,
In particular, it relates to a front-illuminated infrared detection device with high spatial resolution.
【０００２】水銀・カドミウム・テルル（ＨｇＣｄＴｅ
）のような化合物半導体基板の所定領域に、該基板と逆
導電型の不純物原子を導入してＰＮ接合を形成し、この
基板の表面より赤外線を入射し、該入射光を検知する表
面入射型の赤外線検知装置は周知である。[0002] Mercury, cadmium, tellurium (HgCdTe
) is a surface-incident type in which impurity atoms of the opposite conductivity type to the substrate are introduced into a predetermined region of a compound semiconductor substrate to form a PN junction, and infrared rays are incident on the surface of this substrate and the incident light is detected. Infrared detection devices are well known.
【０００３】0003
【従来の技術】従来の表面入射型の光起電力型の赤外線
検知装置について説明する。図４に示すように、従来の
赤外線検知装置は、Ｐ型のＨｇＣｄＴｅ基板１の所定領
域にボロン（Ｂ＋ ） 原子がイオン注入されて受光部
領域２が形成され、この上に、所定の厚さの硫化亜鉛（
ＺｎＳ） よりなる第１層絶縁膜３Ａが形成されている
。そしてこの第１層絶縁膜３Ａ上で、前記受光部領域を
囲むようにクロム（Ｃｒ）金属膜よりなる光シールド膜
４が形成されている。そしてこの光シールド膜４上に、
所定の厚さの硫化亜鉛（ＺｎＳ） よりなる第２層絶縁
膜３Ｂが形成されている。2. Description of the Related Art A conventional front-illuminated photovoltaic infrared detection device will be described. As shown in FIG. 4, in the conventional infrared detection device, boron (B+) atoms are ion-implanted into a predetermined region of a P-type HgCdTe substrate 1 to form a light receiving region 2, and a predetermined thickness is Zinc sulfide (
A first layer insulating film 3A made of (ZnS) is formed. A light shield film 4 made of a chromium (Cr) metal film is formed on the first layer insulating film 3A so as to surround the light receiving region. And on this light shield film 4,
A second layer insulating film 3B made of zinc sulfide (ZnS) is formed to a predetermined thickness.
【０００４】上記受光部領域２上の第１層絶縁膜３Ａ、
第２層絶縁膜３Ｂは、所定のパターンに開口され、該開
口された箇所にはインジウム（Ｉｎ）よりなるコンタク
ト電極５が形成され、第２層絶縁膜３Ｂ上に形成された
金とクロムの二層構造の配線電極６と接続されている。[0004] A first layer insulating film 3A on the light receiving area 2;
The second layer insulating film 3B is opened in a predetermined pattern, and a contact electrode 5 made of indium (In) is formed in the opened area, and a contact electrode 5 made of indium (In) is formed on the second layer insulating film 3B. It is connected to a wiring electrode 6 having a two-layer structure.
【０００５】そして該基板の表面より赤外線を入射し、
前記第１層、および第２層絶縁膜は赤外線を透過するの
で、該基板表面から入射した赤外線を、受光部領域２で
検知している。[0005] Then, infrared rays are incident on the surface of the substrate,
Since the first layer and the second layer insulating film transmit infrared rays, the infrared rays incident from the surface of the substrate are detected in the light receiving region 2.
【０００６】[0006]
【発明が解決しようとする課題】然し、上記した構造で
は、第２層絶縁膜３Ｂを透過して光シールド膜４ より
反射された光、或いは配線電極６ より反射された光が
、図示しないが赤外線検知装置のフィルタ（ゲルマニウ
ムの光入射窓）に当たって反射し、その反射光が更に迷
光となって受光部領域２に再入射されるようになり、そ
のため、該赤外線検知装置の空間分解能が低下し、解像
度が悪くなる問題が生じる。[Problems to be Solved by the Invention] However, in the above structure, the light transmitted through the second layer insulating film 3B and reflected from the light shield film 4 or the light reflected from the wiring electrode 6, although not shown, The reflected light hits the filter (germanium light incidence window) of the infrared detection device and is reflected, and the reflected light becomes stray light and re-enters the light receiving area 2, which reduces the spatial resolution of the infrared detection device. , a problem arises in which the resolution deteriorates.
【０００７】本発明は上記した問題点を除去し、該基板
表面より入射した赤外線が前記した光シールド膜より反
射して、該受光部領域に再入射しないようにした赤外線
検知装置の提供を目的とする。An object of the present invention is to eliminate the above-mentioned problems and provide an infrared detection device in which infrared rays incident from the surface of the substrate are reflected from the light shielding film and do not re-enter the light receiving area. shall be.
【０００８】[0008]
【課題を解決するための手段】本発明の赤外線検知装置
は、半導体基板に受光部領域を設け、該基板上の前記受
光部領域以外の領域に第１層絶縁膜を介して光シールド
膜を設け、該光シールド膜上に前記基板上より入射する
赤外線の反射光が該光シールド膜に当たって反射する反
射光を、干渉により消滅可能とする厚さ、および屈折率
値を有する第２層絶縁膜を設け、前記光シールド膜を受
光部領域より該基板の端部に導出される配線電極として
用いたことを特徴とする。また前記受光部領域に接続す
るコンタクト電極と、配線電極とを同一材料とし、かつ
前記コンタクト電極と、配線電極とを同一工程で形成す
るようにしたことを特徴とするものである。[Means for Solving the Problems] The infrared detection device of the present invention includes a semiconductor substrate provided with a light receiving region, and a light shielding film provided on the substrate in a region other than the light receiving region via a first layer insulating film. a second layer insulating film, which is provided on the light shielding film and has a thickness and a refractive index value such that the reflected light of infrared rays incident on the substrate hits the light shielding film and is reflected, and the reflected light can be eliminated by interference. and the light shield film is used as a wiring electrode led out from the light receiving region to the end of the substrate. Further, the contact electrode connected to the light receiving region and the wiring electrode are made of the same material, and the contact electrode and the wiring electrode are formed in the same process.
【０００９】[0009]
【作用】本発明の赤外線検知装置は、従来の構造に見ら
れるような第２層絶縁膜上に配線電極を設けずに、従来
装置に於ける第１層絶縁膜と第２層絶縁膜の間に設けた
光シールド膜を配線電極として用い、光シールドの機能
と配線電極の機能の両方の機能を持たすようにする。[Function] The infrared detecting device of the present invention does not provide a wiring electrode on the second layer insulating film as seen in the conventional structure, and the infrared detecting device does not provide wiring electrodes on the second layer insulating film as in the conventional device. The light shield film provided in between is used as a wiring electrode, so that it has both the function of a light shield and the function of a wiring electrode.
【００１０】また光シールド膜上に設けるＺｎＳ より
なる第２層絶縁膜の屈折率をｎ とし、ｍを１，２，３
…の整数とし、入射した赤外線の波長をλとすると、
この第２層絶縁膜の厚さｄ は、Further, the refractive index of the second layer insulating film made of ZnS provided on the light shield film is n, and m is 1, 2, 3.
If ... is an integer and the wavelength of the incident infrared ray is λ, then
The thickness d of this second layer insulating film is
【００１１】[0011]
【数１】[Math 1]
【００１２】のようになる。このようにすると、図３に
示すように第２層絶縁膜３Ｂ上より入射した赤外線２１
の一部が第２ 層絶縁膜３Ｂ上で反射して赤外線２２と
なり、該赤外線２１の一部が、第２ 層絶縁膜３Ｂ内を
透過して光シールド膜４ で反射した後、赤外線２３と
成って第２ 層絶縁膜３Ｂより出射する。そしてこの第
２ 層絶縁膜３Ｂ上で反射した赤外線２２と、該第２
層絶縁膜３Ｂ内を屈折して透過して光シールド膜４ で
反射した赤外線２３が、互いに干渉して弱め合うように
なる。また、該第２層絶縁膜３Ｂ上に、入射光を一部反
射し、一部吸収する膜（例えばＣｒ）を蒸着し、反射率
を最小に最適化することもできる。無論、この場合、受
光部等には蒸着しない。It becomes as follows. In this way, as shown in FIG. 3, infrared rays 21 incident from above the second layer insulating film 3B
A part of the infrared rays 21 is reflected on the second layer insulating film 3B and becomes infrared rays 22, and a part of the infrared rays 21 is transmitted through the second layer insulating film 3B and reflected by the light shield film 4, and then becomes infrared rays 23. Then, the light is emitted from the second layer insulating film 3B. The infrared rays 22 reflected on this second layer insulating film 3B and the second layer insulating film 3B
The infrared rays 23 that are refracted and transmitted through the layer insulating film 3B and reflected by the light shield film 4 interfere with each other and weaken each other. Further, a film (for example, Cr) that partially reflects incident light and partially absorbs the incident light can be deposited on the second layer insulating film 3B to optimize the reflectance to the minimum. Of course, in this case, the vapor is not deposited on the light receiving part or the like.
【００１３】図で光路ＡＢＣが入射赤外線２１の波長を
λとするとλ／２の奇数倍であると前記赤外線２２，２
３ が干渉して弱め合うようになる。そのため、従来の
ようにこの第２層絶縁膜３Ｂより出射して、その上のフ
ィルタとしてのゲルマニウムの光透過窓の方に入射する
ような現象が無くなる。そのため、迷光が受光部領域に
再入射されることが無くなるので、空間分解能の大きい
高信頼度の赤外線検知装置が得られる。In the figure, if the optical path ABC is an odd multiple of λ/2, where λ is the wavelength of the incident infrared ray 21, the infrared rays 22, 2
3 will interfere and weaken each other. Therefore, there is no longer a phenomenon in which light is emitted from the second layer insulating film 3B and enters the germanium light transmitting window as a filter thereon, as in the conventional case. Therefore, stray light is not re-injected into the light receiving region, so a highly reliable infrared detection device with high spatial resolution can be obtained.
【００１４】また、この光シールド膜を配線電極に用い
、かつコンタクト電極と同一材料とすると、工程数が大
幅に短縮され、低コストの赤外線検知装置が得られるよ
うになる。Furthermore, if this optical shield film is used for the wiring electrodes and is made of the same material as the contact electrodes, the number of steps can be greatly reduced and a low-cost infrared detection device can be obtained.
【００１５】[0015]
【実施例】以下、図面を用いて本発明の実施例につき詳
細に説明する。図１（ａ）は本発明の半導体装置の第１
実施例の平面図、図１（ｂ）は図１（ａ）のＡ−Ａ´
線断面図である。Embodiments Hereinafter, embodiments of the present invention will be explained in detail with reference to the drawings. FIG. 1(a) shows the first structure of the semiconductor device of the present invention.
A plan view of the embodiment, FIG. 1(b) is taken along the line AA' in FIG. 1(a).
FIG.
【００１６】図１（ａ）、および図１（ｂ）に示すよう
に、Ｐ型のＨｇＣｄＴｅ基板１ 所定領域には、ボロン
（Ｂ＋ ） イオンをイオン注入してＮ＋ 領域を形成
して受光部領域２ が形成されている。As shown in FIGS. 1(a) and 1(b), boron (B+) ions are implanted into a predetermined region of a P-type HgCdTe substrate 1 to form an N+ region, thereby forming a light-receiving region. 2 is formed.
【００１７】そして該基板１ 上にＺｎＳ 膜より成る
第１層絶縁膜３Ａが蒸着により２０００〜３０００Å程
度の厚さに形成されている。次いで該第１ 層絶縁膜３
Ａが窓開きされ、受光部領域２ 上の片隅上にコンタク
トホール１１が形成されている。A first layer insulating film 3A made of a ZnS film is formed on the substrate 1 by vapor deposition to a thickness of about 2000 to 3000 Å. Next, the first layer insulating film 3
A is opened and a contact hole 11 is formed on one corner of the light receiving area 2 .
【００１８】この第１層絶縁膜３Ａ上には、受光部領域
２ を囲むようにしてＩｎより成る光シールド膜４ が
蒸着、およびレジスト膜を用いたエッチングにより形成
されている。そしてこの光シールド膜４を配線電極とし
て兼用して用いる。A light shield film 4 made of In is formed on the first layer insulating film 3A by vapor deposition and etching using a resist film so as to surround the light receiving region 2. This light shield film 4 is also used as a wiring electrode.
【００１９】このようにすると、従来の装置に於けるよ
うに受光部領域２上にコンタクト電極を設ける必要が無
く、また光シールド膜４ と配線電極とが同一材料で同
一工程で形成されるので製造工数が大幅に短縮される。In this way, there is no need to provide a contact electrode on the light receiving area 2 as in the conventional device, and the light shield film 4 and the wiring electrode are formed of the same material and in the same process. Manufacturing man-hours are significantly reduced.
【００２０】次いでこのようにした基板上にＺｎＳ よ
りなる第２層絶縁膜３Ｂを１μｍ の厚さに形成する。
この第２層絶縁膜の厚さは、第２層絶縁膜を形成する材
料の屈折率値と厚さに依存し、光シールド膜より反射し
た光と、第２層絶縁膜上より多少反射する光と干渉する
ような厚さと屈折率値を選択して形成する。Next, a second layer insulating film 3B made of ZnS is formed to a thickness of 1 μm on the substrate thus formed. The thickness of this second layer insulating film depends on the refractive index value and thickness of the material forming the second layer insulating film, and the light reflected from the light shield film and the light reflected from the top of the second layer insulating film are reflected to some extent. The thickness and refractive index value are selected so as to interfere with light.
【００２１】本実施例では、ＺｎＳ の屈折率値ｎ＝２
．３８で、入射赤外光の波長λを１０μｍ とすると、
厚さｄ ＝１．１ μｍ となる。次いで第２層絶縁膜
３Ｂを窓開きして下部の配線電極と兼用して用いる光シ
ールド膜４ を露出させた後、第２層絶縁膜上に前記配
線電極と接続するＩｎ膜よりなるボンディングパッド１
２を形成する。In this example, the refractive index value n=2 of ZnS
．． 38, if the wavelength λ of the incident infrared light is 10 μm, then
The thickness d = 1.1 μm. Next, the second layer insulating film 3B is opened to expose the light shield film 4, which is used also as the lower wiring electrode, and then a bonding pad made of an In film is formed on the second layer insulating film to be connected to the wiring electrode. 1
form 2.
【００２２】次いで第２層絶縁膜３Ｂより下部方向に向
かって、前記配線電極を兼ねた光シールド膜４ に第１
層絶縁膜３Ａの表面に到達する深さを有する溝１３をイ
オンエッチング等を用いて形成し、各受光部領域２ に
対応するように、上記配線電極を兼用した光シールド膜
４ が、この溝１３によって互いに分離独立して、ショ
ートしないようにする。Next, from the second layer insulating film 3B toward the bottom, a first layer is applied to the light shield film 4 which also serves as the wiring electrode.
A groove 13 having a depth that reaches the surface of the layer insulating film 3A is formed using ion etching or the like, and the optical shield film 4, which also serves as the wiring electrode, is placed in this groove so as to correspond to each light receiving area 2. 13 so that they are separated and independent from each other to prevent short circuits.
【００２３】このようにすれば、受光部領域２ 以外の
大部分の領域が、配線電極を兼ねる光シールド膜４ で
あり、この光シールド膜で反射した光も迷光と成って受
光部領域２ に再入射することが無いので高空間分解能
の高信頼度の赤外線検知装置が形成される。また光シー
ルド膜は配線電極を兼ね備えているので、製造工数が大
幅に短縮される。In this way, most of the area other than the light receiving area 2 is the light shielding film 4 which also serves as a wiring electrode, and the light reflected by this light shielding film also becomes stray light and enters the light receiving area 2. Since there is no re-incidence, a highly reliable infrared detection device with high spatial resolution is formed. Furthermore, since the light shield film also serves as a wiring electrode, the number of manufacturing steps can be significantly reduced.
【００２４】またこの配線電極を兼ねる光シールド電極
は、大面積で絶縁膜上に形成されるので、絶縁膜との密
着性も大となり、剥がれ難くなるので、製造歩留まりも
向上する。Furthermore, since the light shield electrode which also serves as a wiring electrode is formed over a large area on the insulating film, its adhesion to the insulating film is high and it is difficult to peel off, so that the manufacturing yield is also improved.
【００２５】また本発明の第２ 実施例として図２（ａ
）、および該図２（ａ）のＡ−Ａ ´線断面図の図２（
ｂ）に示すように、受光部領域２と配線電極を兼ねる光
シールド膜４をＩｎのコンタクト電極５を用いるように
しても良い。FIG. 2(a) shows a second embodiment of the present invention.
), and FIG. 2(
As shown in b), an In contact electrode 5 may be used for the light shielding film 4 which also serves as the light receiving region 2 and the wiring electrode.
【００２６】[0026]
【発明の効果】以上述べたように、本発明の半導体装置
によれば、配線電極、或いは光シールド電極より、基板
表面に入射した赤外線が反射するような現象が除去され
、空間分解能の向上した高信頼度の赤外線検知装置が得
られる効果がある。[Effects of the Invention] As described above, according to the semiconductor device of the present invention, the phenomenon of reflection of infrared rays incident on the substrate surface from the wiring electrode or the light shield electrode is eliminated, and the spatial resolution is improved. This has the effect of providing a highly reliable infrared detection device.
【００２７】また光シールド電極と配線電極とを兼用す
ることができるので、製造工数が低減する効果もあり、
低コストの赤外線検知装置が得られる効果がある。[0027] Furthermore, since the light shield electrode and the wiring electrode can be used together, the number of manufacturing steps can be reduced.
This has the effect of providing a low-cost infrared detection device.
【図１】 本発明の装置の第１実施例の平面図、およ
び断面図である。FIG. 1 is a plan view and a sectional view of a first embodiment of the device of the present invention.
【図２】 本発明の装置の第２実施例の平面図、およ
び断面図である。FIG. 2 is a plan view and a sectional view of a second embodiment of the device of the present invention.
【図３】 本発明の装置の原理の説明図である。FIG. 3 is an explanatory diagram of the principle of the device of the present invention.
【図４】 従来の装置の断面図である。FIG. 4 is a sectional view of a conventional device.
１ ＨｇＣｄＴｅ基板 ２ 受光部領域 ３Ａ 第１ 層絶縁膜 ３Ｂ 第２ 層絶縁膜 ４ 光シールド膜 ５ コンタクト電極 ６ 配線電極 １１ コンタクトホール １２ ボンディングパッド １３ 溝 ２１，２２，２３ 赤外線 1 HgCdTe substrate 2 Light receiving area 3A First layer insulation film 3B Second layer insulation film 4. Light shield film 5 Contact electrode 6 Wiring electrode 11 Contact hole 12 Bonding pad 13 Groove 21, 22, 23 Infrared rays
Claims (2)
域（２） を設け、該基板（１）上の前記受光部領域（
２） 以外の領域に第１ 層絶縁膜（３Ａ）を介して光
シールド膜（４） を設け、該光シールド膜（４） 上
に前記基板（１） 上より入射する赤外線の反射光が、
該光シールド膜（４） に当たって反射する反射光と、
干渉可能と成る厚さ、および屈折率値を有する第２層絶
縁膜（３Ｂ）を設け、前記光シールド膜（４） を受光
部領域（２） より導出される配線電極として兼用して
用いたことを特徴とする赤外線検知装置。1. A compound semiconductor substrate (1) is provided with a light receiving region (2), and the light receiving region (2) is provided on the substrate (1).
2) A light shield film (4) is provided in the other regions via the first layer insulating film (3A), and reflected infrared light incident from above the substrate (1) is on the light shield film (4).
Reflected light that hits the light shield film (4) and is reflected;
A second layer insulating film (3B) having a thickness and refractive index value that allows interference is provided, and the light shield film (4) is also used as a wiring electrode led out from the light receiving area (2). An infrared detection device characterized by:
接続するコンタクト電極（５） と、配線電極を兼ねる
光シールド膜（４） とを同一材料とし、かつ前記コン
タクト電極（５） と、光シールド膜（４） とを同一
工程で形成するようにしたことを特徴とする赤外線検知
装置。2. A contact electrode (5) connected to the light receiving area (2) according to claim 1 and a light shield film (4) which also serves as a wiring electrode are made of the same material, and the contact electrode (5) and , and a light shielding film (4) are formed in the same process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3127279A JPH04352471A (en) | 1991-05-30 | 1991-05-30 | Infrared rays detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3127279A JPH04352471A (en) | 1991-05-30 | 1991-05-30 | Infrared rays detector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04352471A true JPH04352471A (en) | 1992-12-07 |
Family
ID=14956050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3127279A Pending JPH04352471A (en) | 1991-05-30 | 1991-05-30 | Infrared rays detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04352471A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472698B1 (en) | 1999-09-21 | 2002-10-29 | Nec Corporation | Solid state image sensor and method for fabricating the same |
-
1991
- 1991-05-30 JP JP3127279A patent/JPH04352471A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6472698B1 (en) | 1999-09-21 | 2002-10-29 | Nec Corporation | Solid state image sensor and method for fabricating the same |
| US6872584B2 (en) | 1999-09-21 | 2005-03-29 | Nec Electronics Corporation | Solid state image sensor and method for fabricating the same |
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