JPH04348909A - Processing method of semiconductor wafer - Google Patents

Abstract

PURPOSE:To punch out a semiconductor wafer along the cleavage surface angle of crystal structure of a semiconductor wafer. CONSTITUTION:One end 1a parallel to the side of face-centered cubic structure of a work 1 is fit to the positioning jig 2a of a die 2 so as to be inserted and fixed into the die 2. Next, a punch 4 fixed to be parallel to the positioning Jig 2a of the die 2 is pushed down by means of a driving device for punching out the work 1. The punched out work 1 falls down into the hot low cave through a cutter hole 8. In this manner, the work 1 can obtain a number of substances to be worked 1a having a configuration along the cleavage surface. Accordingly, for performing a punching out process, the chipping quantity is reduced and the processing accuracy is improved. Moreover, the processing manhour can be decreased and the cost can also be reduced, and after being a semiconductor article, it never cracks from the chipping part during use by vibration or the like, thereby preventing electric leakage therethrough.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of processing semiconductor wafers, and more particularly to an improvement in a method of processing semiconductor wafers that utilizes crystal structure.

0002

2. Description of the Related Art Conventionally, processing has been carried out by a grinding method as shown in FIGS. 8 and 9. For example, a workpiece (silicon wafer) 21 is fixed to the table 20 with a fixture (not shown),
Blade (grindstone) 23 held by guide flange 22
While being rotated by the spindle 24, the blade 23 makes a cut into the workpiece 21, and the table 20 gives a certain feed rate to cut the workpiece 21 into a size of about 0.3 mm square like the workpiece shown in FIG. It is being ground.

0003

[Problems to be Solved by the Invention] However, in the conventional semiconductor wafer processing method described above, as shown by the two-dot chain line in FIG. In order to cut (grind) a face-centered cubic (111) surface such as a structure or a face-centered cubic structure into squares,
As shown in FIG. 9, chipping always occurs on the ground surface. In addition, since the grinding wheel and the workpiece are processed by the grinding wheel, the workpiece is cut by impact, which is a cause of chipping.

[0004] Due to this chipping, not only the workpiece becomes a defective product after processing, but even after the workpiece is made into a semiconductor product, there are problems such as chipping from the chipping part due to vibration etc. during use and leakage of electricity.

The present invention focuses on the above-mentioned conventional problems and relates to a method for processing semiconductor wafers, and particularly aims to provide a processing method that utilizes crystal structure for processing semiconductor wafers.

[0006]

[Means for Solving the Problems] In order to achieve the above object, the present invention provides a method for processing a semiconductor wafer having a face-centered cubic structure, in which a semiconductor wafer is processed along a cleavage plane angle of a crystal structure of a semiconductor wafer. This process involves punching out a wafer.

[0007]

[Operation] According to the above structure, punching is performed using a punch and a die in accordance with the angle of the cleavage plane of the crystal structure, so that the amount of chipping is reduced and the processing accuracy is improved. Furthermore, since the processing method is punching, the number of processing steps can be reduced and the cost can be reduced.

[0008]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Examples of the semiconductor wafer processing method according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is an overall configuration diagram of one embodiment of the punching jig of the present invention. In FIG. 1, a workpiece (semiconductor wafer) 1 is
One end parallel to one side of the face-centered cubic structure of the work 1 is aligned on the die 2 and fixed in alignment with a positioning jig provided on the die 2. A punch 4 having a cutter blade 3 configured in a punched shape is disposed above the die 2, and is punched vertically along a main column 6 fixed to a base 5 by a drive device such as an actuator (not shown). Driven. A die support 7 for holding the die 2 is fixed to the base 5 below the die 2. The die 2 and the die support 7 are provided with hollow holes for dropping the punched workpiece 1 downward.

FIG. 2 shows an example of the die 2, in which a large number of cutter holes 8 are formed to match the punched shape and dimensions. Further, one side of the cutter hole 8 of the die 2, for example, one side A of a hexagon in FIG. 2, is arranged parallel to the positioning jig 2a arranged on the die 2.

FIG. 3 shows an example of the punch 4, in which a large number of cutters 9 are arranged to match the punching shape and dimensions. One side 9a of the cutter 9 is a positioning jig 2 disposed on the die 2.
Using a positioning jig (not shown) so that it is parallel to a,
It is fixed to the punch holder 4a. Further, as shown in FIGS. 4 and 5, the workpiece 1 has one end 1a cut in parallel along the grains of its crystal structure (111 face-centered cubic structure).

When the workpiece 1 is made of silicon, for example, the shape of the cutter hole 8 and the cutter 9 shown in FIGS. 2 and 3 is determined by the angle of the cleavage plane from its crystal structure (111 face-centered cubic structure) as shown in FIG. (Θ) is formed in accordance with the crystal structure of the workpiece 1 so as to be a regular hexagon.

FIG. 6 is a partially enlarged view of FIG. 1, and the die 2 is provided with a cutter hole 8, and the workpiece 1 is inserted into the die 2 in alignment with the positioning jig 2a of the die 2. There is. The punch 4 is provided with a cutter 3 which is higher than the thickness of the workpiece 1, and is lowered by a drive device such as an actuator (not shown) to punch out the workpiece 1 and drop it into the hollow hole.

FIG. 7 shows the relationship between the crystal structure of the workpiece 1, the cutter 3, and the die 2. The black area M shows the cutter 9 (male) and the cutter hole 8 (female) of the die 2, and the white area N shows the cutter hole 8 (female) of the die 2. An example of the remainder of eight cutter holes is shown.

The operation of the above configuration will now be explained. Work 1 shown in Figure 4 (for example, in the case of silicon wafers, silicon wafers are currently suitable for products with a diameter of 6 inches and a thickness of 300 to 900 microns)
One end 1a parallel to one side of the face-centered cubic structure is inserted into the die 2 in alignment with the positioning jig 2a of the die 2 and fixed. Next, the punch 4, which is fixed so as to be parallel to the positioning jig 2a of the die 2, is pushed down by the driving device to punch out the workpiece 1. Punched workpiece 1 has cutter hole 8
Fall into a more hollow hole. As a result, a large number of workpieces 1a having shapes along the cleavage plane are obtained as the workpiece 1.

Although the above embodiment has been described using a hexagonal shape, the shape is not limited to a hexagonal shape, and other shapes may be used. Also,
The size and thickness are not limited to the above dimensions, and may be larger or smaller. Further, in the above embodiment, a positioning jig is provided in the die 2, but the insertion and fixing of the workpiece 1 may be omitted if the particles of the workpiece 1 are arranged uniformly.

[0016]

[Effects of the Invention] As explained above, according to the present invention,
Since punching is performed using a punch and die to match the angle of the cleavage plane of the crystal structure, the amount of chipping is reduced and processing accuracy is improved. In terms of processing accuracy, conventional dicing (grinding) processing results in a chipping amount of 15 microns or more, whereas the cutting accuracy of the cleavage plane in this project is at the atomic level (10 angstroms).
This results in an improvement in accuracy of approximately 1,000 to 10,000 times. In addition, since the processing method is punching, the number of processing steps is reduced and costs are reduced, and even after the semiconductor product is made, it has the excellent effect of eliminating the possibility of chipping from the chipping part due to vibration etc. during use and causing electrical leakage. can get.

[Brief explanation of drawings]

FIG. 1 is an overall configuration diagram of one embodiment of a punching jig of the present invention.

FIG. 2 is a diagram showing an example of a die.

FIG. 3 is a diagram showing an example of a punch.

FIG. 4 is a diagram showing an example of a workpiece.

FIG. 5 is an enlarged view of a part of the workpiece shown in FIG. 4.

FIG. 6 is a partially enlarged view of FIG. 1.

FIG. 7 is a diagram illustrating the relationship between a workpiece, a die, and a punch.

FIG. 8 is a side view showing conventional grinding processing.

FIG. 9 is a plan view showing conventional grinding processing.

FIG. 10 is a diagram showing a conventional workpiece.

[Explanation of symbols]

1 Work (semiconductor wafer) 2 Die 3 Katsuta blade 4 Punch 5 Base 6 Main pillar 7 Die support 9 Cutter

Claims (1)

[Claims] 1. A method for processing a semiconductor wafer having a face-centered cubic structure, the method comprising punching out the semiconductor wafer along the cleavage plane angle of the crystal structure of the semiconductor wafer.