JPH04343456A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH04343456A
JPH04343456A JP11612091A JP11612091A JPH04343456A JP H04343456 A JPH04343456 A JP H04343456A JP 11612091 A JP11612091 A JP 11612091A JP 11612091 A JP11612091 A JP 11612091A JP H04343456 A JPH04343456 A JP H04343456A
Authority
JP
Japan
Prior art keywords
substrate
oxide film
temperature
mfc
teos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11612091A
Inventor
Yuji Furumura
Masanobu Hatanaka
Takashi Kato
Original Assignee
Fujitsu Ltd
Fujitsu Vlsi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Fujitsu Vlsi Ltd filed Critical Fujitsu Ltd
Priority to JP11612091A priority Critical patent/JPH04343456A/en
Publication of JPH04343456A publication Critical patent/JPH04343456A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To improve reliability of an interlayer insulating film by forming a silicon oxide film only by a thermal CVD method in an atmosphere containing organosilane gas, at least water molecules or hydroxyl group and hydrogen atoms in gaseous state.
CONSTITUTION: Water is supplied to a preliminarily heating chamber 4 by a low pressure difference mass flow controller (MFC) 3 from a cylinder 2 in a constant-temperature oven 1. Tetraethoxysilane (TEOS) is supplied to the chamber 4 by an MFC 6 from a cylinder 5 in the oven 1. Nitrogen or inert gas is added, and mixture gas is injected from a shower nozzle 7. Accordingly, pressure is raised from the nozzle 7 in the vicinity of a silicon substrate 8, a temperature distribution is generated at the substrate 8 and several tens μm near the surface of the substrate 8, and a temperature difference of about 100°C or more is generated. Thus, oxidation and densifying of the oxide film are simultaneously advanced on the substrate 8, and decomposing reaction of the TEOS is accelerated near the electrode of the substrate 8. In this manner, a dense silicon oxide film can be formed at a low temperature.
COPYRIGHT: (C)1992,JPO&Japio
JP11612091A 1991-05-21 1991-05-21 Manufacture of semiconductor device Pending JPH04343456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11612091A JPH04343456A (en) 1991-05-21 1991-05-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11612091A JPH04343456A (en) 1991-05-21 1991-05-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04343456A true JPH04343456A (en) 1992-11-30

Family

ID=14679194

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11612091A Pending JPH04343456A (en) 1991-05-21 1991-05-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04343456A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168930A (en) * 1992-11-30 1994-06-14 Nec Corp Chemical vapor growth, chemical vapor growth device and manufacture of multilayer wiring
US5840631A (en) * 1994-11-28 1998-11-24 Nec Corporation Method of manufacturing semiconductor device
US6352338B1 (en) * 1992-12-22 2002-03-05 Canon Kabushiki Kaisha Ink-jet print head, production method thereof, and printing apparatus with the ink-jet print head
US6706648B2 (en) 1995-09-08 2004-03-16 Semiconductor Energy Laboratory Co., Ltd APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
JP2007234709A (en) * 2006-02-28 2007-09-13 Osaka Univ Manufacturing apparatus and manufacturing method of silicon oxide
DE102009049283A1 (en) * 2009-10-13 2011-04-14 Behr Gmbh & Co. Kg Process for coating at least a part of a basic body

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06168930A (en) * 1992-11-30 1994-06-14 Nec Corp Chemical vapor growth, chemical vapor growth device and manufacture of multilayer wiring
US6352338B1 (en) * 1992-12-22 2002-03-05 Canon Kabushiki Kaisha Ink-jet print head, production method thereof, and printing apparatus with the ink-jet print head
US5840631A (en) * 1994-11-28 1998-11-24 Nec Corporation Method of manufacturing semiconductor device
US6706648B2 (en) 1995-09-08 2004-03-16 Semiconductor Energy Laboratory Co., Ltd APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
US7491659B2 (en) 1995-09-08 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical
JP2007234709A (en) * 2006-02-28 2007-09-13 Osaka Univ Manufacturing apparatus and manufacturing method of silicon oxide
DE102009049283A1 (en) * 2009-10-13 2011-04-14 Behr Gmbh & Co. Kg Process for coating at least a part of a basic body

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