JPH04328231A - Blanking method for charged particle beam - Google Patents

Blanking method for charged particle beam

Info

Publication number
JPH04328231A
JPH04328231A JP3095895A JP9589591A JPH04328231A JP H04328231 A JPH04328231 A JP H04328231A JP 3095895 A JP3095895 A JP 3095895A JP 9589591 A JP9589591 A JP 9589591A JP H04328231 A JPH04328231 A JP H04328231A
Authority
JP
Japan
Prior art keywords
charged particle
particle beam
deflected
electrostatic
sets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3095895A
Other languages
Japanese (ja)
Inventor
Kazuo Aida
和男 相田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP3095895A priority Critical patent/JPH04328231A/en
Publication of JPH04328231A publication Critical patent/JPH04328231A/en
Pending legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PURPOSE:To make blanking with no generation of beam trailing while the beam converging characteristic is well held. CONSTITUTION:Between electrostatic lenses 3 and 7 in two-step arrangement, a charged particle beam 1 is made a parallel beam with which the aberration coefficient minimizes. Deflection with the same deflecting angle and with opposite signs, plus and minus, is made with electrostatic deflectors 11, 12 installed there in two-step arrangement, and blanking is performed.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、集束荷電粒子ビームを
用いて微細加工及び観察を行う集束荷電粒子ビーム装置
に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a focused charged particle beam apparatus for performing fine processing and observation using a focused charged particle beam.

【0002】0002

【従来の技術】従来、荷電粒子ビームのブランキングを
荷電粒子ビームの筋を引くことなく行う為にコンデンサ
レンズとオブジェクティブレンズの間で荷電粒子ビーム
を一度集束させ、図2に示すように荷電粒子ビーム11
の集束点A14の上下に偏向器(上段偏向器12及び下
段偏向器13)を設け、上段偏向器12で偏向した荷電
粒子ビーム11を下段偏向器13で更に偏向させ、上段
偏向器12及び下段偏向器13により偏向された荷電粒
子ビーム11の仮想光源を無偏向時の集束点A14と一
致させることにより、オブジェクティブレンズにより最
終的に荷電粒子ビーム11を集束させた試料表面上で筋
を引くことなくブランキングを可能としていた。
[Prior Art] Conventionally, in order to perform blanking of a charged particle beam without creating streaks in the charged particle beam, the charged particle beam is once focused between a condenser lens and an objective lens, and the charged particle beam is focused once between a condenser lens and an objective lens. beam 11
Deflectors (upper deflector 12 and lower deflector 13) are provided above and below the focusing point A14, and the charged particle beam 11 deflected by the upper deflector 12 is further deflected by the lower deflector 13. By aligning the virtual light source of the charged particle beam 11 deflected by the deflector 13 with the focusing point A14 when the beam is not deflected, a streak is drawn on the sample surface where the charged particle beam 11 is finally focused by the objective lens. This made blanking possible without any problems.

【0003】0003

【発明が解決しようとする課題】従来技術に於いては、
荷電粒子ビームを静電レンズ・コンデンサレンズ及びオ
ブジェクティブレンズの間で一度集束させているが、コ
ンデンサレンズとオブジェクティブレンズの間で荷電粒
子ビームを平行に走らせる場合に比べ、コンデンサレン
ズ及びオブジェクティブレンズの収差係数が大きく、荷
電粒子ビームをより集束させる為には好ましくない。本
発明は、荷電粒子ビームの集束性を悪くすることなく、
荷電粒子ビームのブランキングによる筋が生じることな
くブランキングを可能にすることを目的とする。
[Problem to be solved by the invention] In the prior art,
The charged particle beam is once focused between the electrostatic lens, condenser lens, and objective lens, but compared to the case where the charged particle beam runs parallel between the condenser lens and the objective lens, the aberrations of the condenser lens and objective lens are smaller. The coefficient is large, which is not preferable for further focusing the charged particle beam. The present invention does not impair the focusing property of the charged particle beam,
The object is to enable blanking of a charged particle beam without creating streaks due to blanking.

【0004】0004

【課題を解決するための手段】本発明は、前記目的を達
成するため、コンデンサレンズにより荷電粒子ビームを
平行ビームにし、コンデンサレンズ及びオブジェクトレ
ンズの収差を最少に保ち、上段偏向器で荷電粒子ビーム
を偏向し、上段偏向器と同じ偏向角で、向きは逆方向に
、上段偏向器で偏向された荷電粒子が下段偏向器で偏向
されるように同期させ、下段偏向器で偏向させ、ブラン
キングアパーチャーにより荷電粒子ビームを遮蔽するこ
とにより、荷電粒子ビームのブランキングを行う。
[Means for Solving the Problems] In order to achieve the above object, the present invention converts a charged particle beam into a parallel beam using a condenser lens, minimizes aberrations of the condenser lens and object lens, and uses an upper deflector to make the charged particle beam a parallel beam. The charged particles are deflected at the same deflection angle as the upper deflector, but in the opposite direction.The charged particles deflected by the upper deflector are synchronized so that they are deflected by the lower deflector, and the charged particles are deflected by the lower deflector. Blanking of the charged particle beam is performed by blocking the charged particle beam with an aperture.

【0005】[0005]

【実施例】図1及び図3にて、本発明の実施例を示す。 図1に示すように荷電粒子源1より発生した荷電粒子ビ
ーム2を静電レンズ・コンデンサレンズ3により平行ビ
ームとし、荷電粒子ビーム2を試料表面8の上にフォー
カスさせる静電レンズ・オブジェクティブレンズ7との
間に、2段の静電偏向器、上段偏向器4及び下段偏向器
5を設け、荷電粒子ビームをブランキングするには、上
段偏向器4により偏向し、上段偏向器と同じ電圧の立上
がり・立下がり特性を持つ下段偏向器5により、上段偏
向器4による偏向角と同じ量で逆方向に、同一荷電粒子
が力を受けるよう、一定の時間遅れにより同期させ、下
段偏向器5の下部に設けたブランキングアパーチャー6
により荷電粒子ビーム2を遮蔽する。
[Embodiment] An embodiment of the present invention is shown in FIGS. 1 and 3. As shown in FIG. 1, a charged particle beam 2 generated from a charged particle source 1 is made into a parallel beam by an electrostatic lens/condenser lens 3, and an electrostatic lens/objective lens 7 focuses the charged particle beam 2 onto a sample surface 8. A two-stage electrostatic deflector, an upper-stage deflector 4 and a lower-stage deflector 5 are provided between the The lower deflector 5, which has rising and falling characteristics, is synchronized with a certain time delay so that the same charged particles receive a force in the opposite direction and by the same amount as the deflection angle by the upper deflector 4. Blanking aperture 6 provided at the bottom
The charged particle beam 2 is shielded by.

【0006】以上の条件を満足させる為には、図3に示
すように上段偏向器21及び下段偏向器22の各々のギ
ャップD1 、D2 、有効電場長L1 、L2 、両
端への印加電圧±V1 、±V2 、2つの偏向器間の
ドリフトスペースをLa とした時、上段偏向器21に
よる偏向角と下段偏向器22による偏向角が逆符号で同
じ大きさとなる条件は、 L1 ・V1 /D1 +L2 ・V2/D2 =0を
満たす寸法或いは電位により満たされる。又、上段偏向
器21で偏向された同じ荷電粒子が逆符号で同じ偏向角
の偏向を下段偏向器22で受けるためには、電圧の立上
がり、立下がり時間は、上段偏向器21及び下段偏向器
22共に同じにして、下段偏向器22への電圧の印加は
、上段偏向器への電圧の印加より、Δt=7.22×1
0−5×(L1 +La )×(M/φ0)1/2だけ
時間を遅らせば良い。但し、Δtの単位は秒,L1,L
2 の単位はメートル、Mは荷電粒子の質量数、φ0 
は荷電粒子のエネルギーで単位はエレクトロンボルト。 この時、これ等2つの偏向器による偏向量Δxは、 Δx=L1 ・V1 (L1 +L2 +2La )/
4D1 φ0 となり、ブランキングアパーチャーの径
はブランキング上でのビーム径をd0 とすれば、2Δ
x−d0 以上必要となる。
In order to satisfy the above conditions, as shown in FIG. 3, the gaps D1 and D2 of the upper deflector 21 and the lower deflector 22, the effective electric field lengths L1 and L2, and the voltage applied to both ends ±V1 are required. , ±V2, When the drift space between the two deflectors is La, the condition that the deflection angle by the upper deflector 21 and the deflection angle by the lower deflector 22 have opposite signs and the same magnitude is L1 ・V1 /D1 +L2 - Satisfied by dimensions or potential that satisfy V2/D2 = 0. In addition, in order for the same charged particle deflected by the upper deflector 21 to be deflected with the opposite sign and the same deflection angle by the lower deflector 22, the rise and fall times of the voltage are different from those of the upper deflector 21 and the lower deflector. 22 are the same, and the voltage applied to the lower deflector 22 is Δt=7.22×1 compared to the voltage applied to the upper deflector 22.
It is sufficient to delay the time by 0-5×(L1+La)×(M/φ0)1/2. However, the units of Δt are seconds, L1, L
The unit of 2 is meters, M is the mass number of charged particles, φ0
is the energy of a charged particle in electron volts. At this time, the amount of deflection Δx by these two deflectors is Δx=L1 ・V1 (L1 +L2 +2La)/
4D1 φ0, and the diameter of the blanking aperture is 2Δ, if the beam diameter on blanking is d0.
More than x-d0 is required.

【0007】以上の条件で荷電粒子ビームをブランキン
グする事により、荷電粒子ビームはオブジェクティブレ
ンズに垂直に平行ビームとして入射している状態のまま
でブランキングは実行され、それ故、オブジェクティブ
レンズにとっての仮想光源の位置がブランキング実行か
ら終了までの間変化せず、試料面への荷電粒子ビームの
照射位置が変わらないために、荷電粒子の収束性が最良
の状態でブランキングによる試料上での荷電粒子ビーム
の筋引きを生じさせない事を可能にする。
By blanking the charged particle beam under the above conditions, the blanking is performed while the charged particle beam is incident perpendicularly to the objective lens as a parallel beam, and therefore, the blanking is performed with the charged particle beam entering the objective lens perpendicularly as a parallel beam. The position of the virtual light source does not change from the start of blanking to the end, and the irradiation position of the charged particle beam on the sample surface does not change. This makes it possible to avoid streaking of the charged particle beam.

【0008】[0008]

【発明の効果】以上説明したように、荷電粒子ビームの
収束性が最良の状態で、ブランキングによる試料表面上
の筋引きを生じることなく、ブランキングを実行するこ
とが出来る。
As described above, blanking can be performed with the charged particle beam in the best convergence state and without streaking on the sample surface due to blanking.

【図面の簡単な説明】[Brief explanation of drawings]

【図1】本発明に於ける荷電粒子ビームブランキング法
を示す。
FIG. 1 shows a charged particle beam blanking method according to the present invention.

【図2】従来法による方法を示す。FIG. 2 shows a conventional method.

【図3】本発明の条件を説明する為の図である。FIG. 3 is a diagram for explaining the conditions of the present invention.

【符号の説明】[Explanation of symbols]

1  荷電粒子発生源 2  荷電粒子ビーム 3  コンデンサレンズ 4  上段偏向器 5  下段偏向器 6  ブランキングアパーチャー 7  オブジェクティブレンズ 8  試料表面 11  荷電粒子ビーム 12  上段偏向器 13  下段偏向器 14  集束点A 15  偏向された荷電粒子 21  上段偏向器 22  下段偏向器 23  偏向された荷電粒子 1 Charged particle source 2 Charged particle beam 3 Condenser lens 4 Upper stage deflector 5 Lower deflector 6 Blanking aperture 7 Objective lenses 8 Sample surface 11 Charged particle beam 12 Upper stage deflector 13 Lower deflector 14 Focusing point A 15 Deflected charged particles 21 Upper stage deflector 22 Lower deflector 23 Deflected charged particles

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  荷電粒子を発生する荷電粒子源と該荷
電粒子源より発生した荷電粒子ビームを集束させる2段
の静電レンズを構成するコンデンサレンズ及びオブジェ
クティブレンズと、該コンデンサレンズと該オブジェク
トレンズの間に、ビーム走向方向に直列に2組の静電偏
向器が同一面内に偏向出来るよう2組の該静電偏向器の
電極板に垂直な方線ベクトルが平行になるよう配置され
、該2組の静電偏向板により偏向された該荷電粒子ビー
ムを阻止するアパーチャーにより成る荷電粒子装置に於
いて、該コンデンサにより該荷電粒子ビームを平行にし
、2組の該静電偏向器による該荷電粒子ビームの偏向角
が互いに打ち消し合うよう2組の該静電偏向器に印加す
る電圧が作る電場の方向が逆になるようにしたことを特
徴とする荷電粒子ビームのブランキング法。
1. A charged particle source that generates charged particles, a condenser lens and an objective lens that constitute a two-stage electrostatic lens that focuses a charged particle beam generated from the charged particle source, and the condenser lens and the object lens. In between, two sets of electrostatic deflectors are arranged in series in the beam running direction so that the direction vectors perpendicular to the electrode plates of the two sets of electrostatic deflectors are parallel to each other so that the beam can be deflected in the same plane, In a charged particle device comprising an aperture that blocks the charged particle beam deflected by the two sets of electrostatic deflection plates, the charged particle beam is made parallel by the capacitor and deflected by the two sets of electrostatic deflectors. A charged particle beam blanking method characterized in that the directions of electric fields created by voltages applied to the two sets of electrostatic deflectors are reversed so that the deflection angles of the charged particle beams cancel each other out.
JP3095895A 1991-04-25 1991-04-25 Blanking method for charged particle beam Pending JPH04328231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3095895A JPH04328231A (en) 1991-04-25 1991-04-25 Blanking method for charged particle beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3095895A JPH04328231A (en) 1991-04-25 1991-04-25 Blanking method for charged particle beam

Publications (1)

Publication Number Publication Date
JPH04328231A true JPH04328231A (en) 1992-11-17

Family

ID=14150045

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3095895A Pending JPH04328231A (en) 1991-04-25 1991-04-25 Blanking method for charged particle beam

Country Status (1)

Country Link
JP (1) JPH04328231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006318913A (en) * 2005-05-14 2006-11-24 Fei Co Deflection signal compensation of charged particle beam

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006318913A (en) * 2005-05-14 2006-11-24 Fei Co Deflection signal compensation of charged particle beam

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