JPH04326656A - Close contact type image sensor - Google Patents
Close contact type image sensorInfo
- Publication number
- JPH04326656A JPH04326656A JP3097127A JP9712791A JPH04326656A JP H04326656 A JPH04326656 A JP H04326656A JP 3097127 A JP3097127 A JP 3097127A JP 9712791 A JP9712791 A JP 9712791A JP H04326656 A JPH04326656 A JP H04326656A
- Authority
- JP
- Japan
- Prior art keywords
- light
- image sensor
- crystal silicon
- single crystal
- light receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 14
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 18
- 238000004519 manufacturing process Methods 0.000 description 16
- 238000001259 photo etching Methods 0.000 description 8
- 238000003384 imaging method Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- ORQBXQOJMQIAOY-UHFFFAOYSA-N nobelium Chemical compound [No] ORQBXQOJMQIAOY-UHFFFAOYSA-N 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は密着型イメージセンサに
関し、特に単結晶シリコン基板上に受光素子が形成され
た密着型イメージセンサに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a contact type image sensor, and more particularly to a contact type image sensor in which a light receiving element is formed on a single crystal silicon substrate.
【０００２】0002
【従来の技術】従来、密着型イメージセンサとして、図
１７に示すように、バルク状の単結晶シリコン基板１０
１の端部近傍に一列状に受光素子１０２を形成し、この
受光素子１０２の対峙部分に正立等倍レンズアレイなど
の結像素子１０４を配置し、この結像素子１０４の受光
素子１０２とは反対側で原稿１０３を走査させるととも
に、原稿１０３をＬＥＤアレイなどの発光素子１０５で
照射して、原稿１０３での反射光を結像素子１０４部分
を介して受光素子１０２で受光することによって、原稿
１０３の濃淡を読み取ることが提案されている。なお、
図示されていないが、この従来の密着型イメージセンサ
は、バルク状の単結晶シリコン基板１０１に受光素子１
０２を形成するとともに、各受光素子１０２から蓄積電
荷を順次読み出すためのシフトレジスタなどから成る駆
動回路も同一基板上に形成することによって、読み取り
速度が速く且つ安価な密着型イメージセンサを提供しよ
うとするものである。2. Description of the Related Art Conventionally, as a contact image sensor, a bulk single crystal silicon substrate 10, as shown in FIG.
1, and an imaging element 104 such as an erect equal-magnification lens array is disposed in a portion facing the light receiving elements 102. By scanning the original 103 on the opposite side, illuminating the original 103 with a light emitting element 105 such as an LED array, and receiving the reflected light from the original 103 with the light receiving element 102 via the imaging element 104, It has been proposed to read the shading of the original 103. In addition,
Although not shown in the drawings, this conventional contact type image sensor has a light receiving element 1 mounted on a bulk single crystal silicon substrate 101.
02 and also form a drive circuit consisting of a shift register and the like for sequentially reading accumulated charges from each light-receiving element 102 on the same substrate. It is something to do.
【０００３】0003
【発明が解決しようとする問題点】ところが、この従来
の密着型イメージセンサでは、原稿１０３の濃淡を読み
取るために、受光素子１０２の対峙部分に正立等倍レン
ズアレイなどから成る結像素子１０４を設けなければな
らないが、この正立等倍レンズアレイは、非常に高価で
あり、イメージセンサのコストダウンに対して大きな支
障になるととともに部品点数も多くなるという問題があ
った。[Problems to be Solved by the Invention] However, in this conventional contact type image sensor, in order to read the shading of the original 103, an imaging element 104 consisting of an erect equal-magnification lens array or the like is placed in a portion facing the light receiving element 102. However, this erecting equal-magnification lens array is very expensive, poses a major hindrance to reducing the cost of image sensors, and has the problem of increasing the number of parts.
【０００４】0004
【目的】本発明は、このような問題点に鑑み案出された
ものであり、受光素子を形成する基板として単結晶シリ
コン基板を用いるとともに、正立等倍レンズアレイなど
の高価な結像素子を用いることなく原稿の濃淡を読み取
ることができる密着型イメージセンサを提供することを
目的とするものである。[Purpose] The present invention was devised in view of the above-mentioned problems, and uses a single crystal silicon substrate as a substrate for forming a light receiving element, and also uses an expensive imaging element such as an erecting equal-magnification lens array. It is an object of the present invention to provide a contact type image sensor that can read the shading of a document without using an image sensor.
【０００５】[0005]
【問題点を解決するための手段】本発明によれば、単結
晶シリコン基板の一主面上に複数の受光素子を形成する
とともに、この受光素子に対峙して走査される原稿に光
を照射して反射光を前記受光素子で読み取る密着型イメ
ージセンサにおいて、前記単結晶シリコン基板の受光素
子部分に、異方性エッチングによって形成した導光窓を
設け、前記単結晶シリコン基板の他の主面側から前記導
光窓を介して前記原稿に光を照射することを特徴とする
密着型イメージセンサが提供され、そのことにより上記
目的が達成される。[Means for Solving the Problems] According to the present invention, a plurality of light receiving elements are formed on one main surface of a single crystal silicon substrate, and light is irradiated to an original to be scanned facing the light receiving elements. In the contact type image sensor in which reflected light is read by the light receiving element, a light guide window formed by anisotropic etching is provided in the light receiving element portion of the single crystal silicon substrate, and the other main surface of the single crystal silicon substrate is provided with a light guide window formed by anisotropic etching. There is provided a contact image sensor characterized in that light is irradiated onto the document from the side through the light guide window, thereby achieving the above object.
【０００６】[0006]
【作用】上記構成によれば、単結晶シリコン基板内に形
成された受光素子部分に正確に導光窓を形成することが
でき、もって正立等倍レンズアレイなどの高価な結像素
子を用いることなく原稿の濃淡を読み取ることができる
単結晶シリコン基板を用いた密着型イメージセンサを提
供できる。[Function] According to the above structure, a light guiding window can be accurately formed in the light receiving element portion formed in the single crystal silicon substrate, thereby making it possible to use an expensive imaging element such as an erecting equal-magnification lens array. It is possible to provide a contact image sensor using a single-crystal silicon substrate that can read the shading of a document without any interference.
【０００７】[0007]
【実施例】以下、本発明を添付図面に基づき詳細に説明
する。図１は、本発明に係わる密着型イメージセンサの
受光素子付近を示す概略構成図であり、１は単結晶シリ
コン基板、２は受光素子部分、３は受光素子部分２の近
傍に形成された導光窓である。なお、図１（ｂ）は、図
１（ａ）のＡ−Ａ線断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings. FIG. 1 is a schematic configuration diagram showing the vicinity of a light receiving element of a contact type image sensor according to the present invention, in which 1 is a single crystal silicon substrate, 2 is a light receiving element part, and 3 is a guide formed near the light receiving element part 2. It is a light window. Note that FIG. 1(b) is a cross-sectional view taken along the line A-A in FIG. 1(a).
【０００８】前記単結晶シリコン基板１は、引き上げ法
などによって形成され、一導電型を呈する不純物を含有
している。The single crystal silicon substrate 1 is formed by a pulling method or the like and contains impurities exhibiting one conductivity type.
【０００９】前記単結晶シリコン基板１の一主面には、
逆導電型を呈する不純物が部分的に拡散されてｐ−ｎ接
合部が形成されており、この部分がフォトダイオードと
なって受光素子２のアレイが形成される。各受光素子２
は、単結晶シリコンの他の部分に別途形成された駆動回
路（不図示）に電気的に接続されている。On one main surface of the single crystal silicon substrate 1,
An impurity exhibiting an opposite conductivity type is partially diffused to form a pn junction, and this portion serves as a photodiode to form an array of light receiving elements 2. Each light receiving element 2
is electrically connected to a drive circuit (not shown) separately formed in another portion of the single crystal silicon.
【００１０】この受光素子２の近傍には、導光窓３が形
成されている。この導光窓３は、苛性カリ水溶液、ヒト
ラジンとイソプロピルアルコール混合液、或いはエチレ
ンジアミンとカテコールの混合水溶液などのアルカリエ
ッチング液を用いて異方性エッチングを行うことにより
形成される。A light guiding window 3 is formed near the light receiving element 2. The light guiding window 3 is formed by anisotropic etching using an alkaline etching solution such as a caustic potassium aqueous solution, a mixed solution of hytrazine and isopropyl alcohol, or a mixed aqueous solution of ethylenediamine and catechol.
【００１１】前記単結晶シリコン基板１の受光素子２側
の面には、透明接着剤４によって厚み２０〜１００μｍ
程度の薄板ガラス５が接着されており、原稿６との接着
・磨耗から受光素子２を保護する。The surface of the single crystal silicon substrate 1 on the light receiving element 2 side is coated with a transparent adhesive 4 to a thickness of 20 to 100 μm.
A thin plate glass 5 of approximately 100 mL is adhered to protect the light receiving element 2 from adhesion to the original 6 and abrasion.
【００１２】前記単結晶シリコン基板１の受光素子２の
反対側には、ＬＥＤアレイなどの光源７が配設されてお
り、光源７からの光は受光素子２毎にある導光窓３を通
過して原稿６を照明する。原稿６からの反射光が、導光
窓３周囲の受光素子２に入射し、原稿６の濃淡に応じた
電気信号が駆動回路により順次受光素子２から時系列的
に得ることができる。図２ないし図１６に本発明の密着
型イメージセンサの製造方法を説明する。A light source 7 such as an LED array is disposed on the opposite side of the single crystal silicon substrate 1 from the light receiving element 2, and light from the light source 7 passes through a light guide window 3 provided for each light receiving element 2. to illuminate the original 6. The reflected light from the original 6 is incident on the light receiving element 2 around the light guiding window 3, and electric signals corresponding to the shading of the original 6 can be sequentially obtained from the light receiving element 2 in time series by a driving circuit. A method of manufacturing a contact type image sensor according to the present invention will be explained with reference to FIGS. 2 to 16.
【００１３】まず、図２に示すように、主面が（１００
）面で厚みが２００μｍ程度のｐ型単結晶シリコン基板
１の表面を０．５〜１．０μｍの膜厚で熱酸化して熱酸
化膜１１を形成する。First, as shown in FIG. 2, the main surface is (100
) A surface of a p-type single crystal silicon substrate 1 having a thickness of about 200 μm is thermally oxidized to a thickness of 0.5 to 1.0 μm to form a thermal oxide film 11.
【００１４】次に、図３に示すように、受光素子２を形
成する面とは反対面の熱酸化膜１１にフォトエッチング
工程により、略正方形の孔１１ａを、複数、受光素子２
の配列ピッチに等しい間隔で、単結晶シリコン基板１の
（１１０）方向に形成する。なお、図３（ｂ）は同図（
ａ）のＡ−Ａ線断面図、図３（ｃ）は同図（ａ）のＢ−
Ｂ線断面図である。Next, as shown in FIG. 3, a plurality of approximately square holes 11a are formed in the thermal oxide film 11 on the opposite side to the surface on which the light receiving element 2 is formed by a photo-etching process.
They are formed in the (110) direction of single crystal silicon substrate 1 at intervals equal to the arrangement pitch of. Note that Figure 3(b) is similar to the same figure (
Figure 3(c) is a cross-sectional view taken along line A-A in Figure 3(a).
It is a sectional view taken along the B line.
【００１５】次に、図４に示すように、熱酸化膜１１を
マスクとして１回目の単結晶シリコンのエッチングを行
う。エッチング液としては、４ｍｏｌ％カテコール、４
６．４ｍｏｌ％のエチレンジアミン、４９．６ｍｏｌ％
の水の混合液を用い、エッチングは窒素をバブリングし
ながら、１１８℃でエッチング液を沸騰させながら行う
。このエッチング工程により、図４に示すように、四角
錐状の凹部１２が直線状に配列される。すなわち、（１
００）面のシリコン基板上に酸化シリコン膜（熱酸化膜
）などで（１１０）方向の線で成り立つ図形を作ってア
ルカリエッチングを行うと、（１１１）方向には、エッ
チングが進行しないため、四角錐状の凹部１２を形成で
きる。Next, as shown in FIG. 4, a first etching of single crystal silicon is performed using the thermal oxide film 11 as a mask. As the etching solution, 4 mol% catechol, 4
6.4 mol% ethylenediamine, 49.6 mol%
Etching is performed using a mixed solution of water at 118° C. while bubbling nitrogen while boiling the etching solution. Through this etching process, the quadrangular pyramid-shaped recesses 12 are arranged in a straight line, as shown in FIG. That is, (1
When alkaline etching is performed on a silicon oxide film (thermal oxide film) made of a silicon oxide film (thermal oxide film) on a silicon substrate with a 00) surface, etching does not proceed in the (111) direction. A pyramid-shaped recess 12 can be formed.
【００１６】次に、図５に示すように、受光素子２とは
反対側の面の熱酸化膜１１を、フォトエッチング工程に
より凹部１２の列を中心に帯状に除去する。なお、図５
（ｂ）は同図（ａ）のＡ−Ａ線断面図、同図（ｃ）は同
図（ａ）のＢ−Ｂ線断面図である。同図（ｃ）中のＬ１
は導光窓３のサイズ（図６のＬ２ ）と単結晶シリコ
ン基板１の厚みｔより、Ｌ１ ＝Ｌ２ ＋√２・ｔで概
略値が得られる。Next, as shown in FIG. 5, the thermal oxide film 11 on the side opposite to the light-receiving element 2 is removed in a band shape centered around the rows of recesses 12 by a photo-etching process. Furthermore, Figure 5
(b) is a cross-sectional view taken along the line A--A in FIG. 3(a), and FIG. L1 in the same figure (c)
An approximate value can be obtained from the size of the light guiding window 3 (L2 in FIG. 6) and the thickness t of the single crystal silicon substrate 1 as L1 = L2 +√2·t.
【００１７】次に、図６に示すように、２回目の単結晶
シリコン基板１のエッチングを行う。エッチングの方法
は図４の工程で示した方法と同じである。このエッチン
グは、単結晶シリコン基板を貫通するまで行い、希望す
るサイズの導光窓３が得られた時点でエッチングを終点
とする。導光窓３のサイズは、８ｄｏｔ／ｍｍの素子密
度の場合、６０μｍ程度が適当である。なお、導光窓３
のサイズが小さいと信号出力が低下し、大き過ぎると分
解能が低下する。このエッチング工程後に、マスクに用
いた熱酸化膜１１はエッチングにより除去する。なお、
図６（ｂ）は同図（ａ）のＡ−Ａ線断面図、図６（ｃ）
は同図（ａ）のＢ−Ｂ線断面図である。Next, as shown in FIG. 6, the single crystal silicon substrate 1 is etched a second time. The etching method is the same as that shown in the process of FIG. This etching is performed until the single crystal silicon substrate is penetrated, and the etching ends when the light guide window 3 of the desired size is obtained. The appropriate size of the light guide window 3 is about 60 μm when the element density is 8 dots/mm. In addition, the light guide window 3
If the size is small, the signal output will be reduced, and if it is too large, the resolution will be reduced. After this etching step, the thermal oxide film 11 used as a mask is removed by etching. In addition,
FIG. 6(b) is a cross-sectional view taken along line A-A in FIG. 6(a), and FIG. 6(c)
is a cross-sectional view taken along the line B-B in FIG.
【００１８】次に、図７に示すように、再度、熱酸化膜
１３を０．５〜１．５μｍの厚みに形成する。Next, as shown in FIG. 7, a thermal oxide film 13 is formed again to a thickness of 0.5 to 1.5 μm.
【００１９】次に、図８に示すように、不純物の拡散を
行うべき領域（フォトダイオード部と駆動回路を構成す
るＦＥＴのソース・ドレイン部）の熱酸化膜１３をフォ
トエッチングにより除去する。なお、図８（ｂ）は同図
（ａ）のＡ−Ａ線断面図である。Next, as shown in FIG. 8, the thermal oxide film 13 in the region where the impurity is to be diffused (the photodiode section and the source/drain section of the FET constituting the drive circuit) is removed by photoetching. Note that FIG. 8(b) is a cross-sectional view taken along line A-A in FIG. 8(a).
【００２０】次に、図９に示すように、リン（Ｐ）を熱
拡散して、拡散領域１４を形成し、半導体接合部を形成
する。Next, as shown in FIG. 9, phosphorus (P) is thermally diffused to form a diffusion region 14 and a semiconductor junction.
【００２１】次に、図１０に示すように、ＦＥＴ１５の
ゲート部の酸化シリコン膜をフォトエッチング工程によ
り除去する。Next, as shown in FIG. 10, the silicon oxide film on the gate portion of the FET 15 is removed by a photo-etching process.
【００２２】次に、図１１に示すように、図８および図
１０に示す工程で熱酸化膜を除去したシリコン基板上に
、熱酸化により、酸化シリコン膜１６を５００〜１５０
０Å形成する。Next, as shown in FIG. 11, on the silicon substrate from which the thermal oxide film has been removed in the steps shown in FIGS.
0 Å is formed.
【００２３】次に、図１２に示すように、図１１の工程
で形成した酸化シリコン膜１６にフォトエッチング工程
により、コンタクトホール１７を形成する。Next, as shown in FIG. 12, a contact hole 17 is formed in the silicon oxide film 16 formed in the step of FIG. 11 by a photo-etching process.
【００２４】次に、図１３に示すように、受光素子２が
形成される面にアルミニウムなどから成る金属膜１８を
成膜し、フォトエッチング工程により第１層の配線パタ
ーンを形成する。この金属膜１８は、蒸着法やスパッタ
リング法により形成する。Next, as shown in FIG. 13, a metal film 18 made of aluminum or the like is formed on the surface on which the light receiving element 2 is to be formed, and a first layer wiring pattern is formed by a photo-etching process. This metal film 18 is formed by a vapor deposition method or a sputtering method.
【００２５】次に、図１４に示すように、層間絶縁層と
してプラズマＣＶＤ法やスパッタリング法により、ほぼ
全面に窒化ケイ素膜または酸化シリコン膜１９を０．５
〜１．５μｍの厚みに形成し、コンタクトホール２０を
フォトエッチング工程によって開ける。Next, as shown in FIG. 14, a silicon nitride film or a silicon oxide film 19 with a thickness of 0.5% is deposited on almost the entire surface as an interlayer insulating layer by plasma CVD or sputtering.
The contact hole 20 is formed to have a thickness of ~1.5 μm and is opened by a photo-etching process.
【００２６】次に、図１５に示すように、再度受光素子
２面にアルミニウムなどの金属膜を成膜し、フォトエッ
チング工程によって第２の配線パターン２１を形成する
。Next, as shown in FIG. 15, a metal film such as aluminum is again formed on the surface of the light receiving element 2, and a second wiring pattern 21 is formed by a photo-etching process.
【００２７】最後に、裏面側からアルミニウムなどの金
属膜２２を成膜して完成する。なお、この裏面側の金属
膜２２は、遮光層として作用する。Finally, a metal film 22 of aluminum or the like is formed from the back side to complete the process. Note that this metal film 22 on the back surface side acts as a light shielding layer.
【００２８】[0028]
【発明の効果】以上のように、本発明に係る密着型イメ
ージセンサによれば、単結晶シリコン基板の受光部に、
異方性エッチングによって形成した導光窓を設け、単結
晶シリコン基板の他の主面側からこの導光窓を介して原
稿に光を照射することから、高価な結像素子を用いるこ
となく原稿の濃淡を読み取ることができ、部品点数が少
なくて安価な一次元イメージセンサの提供が可能となる
。[Effects of the Invention] As described above, according to the contact type image sensor according to the present invention, the light receiving part of the single crystal silicon substrate has
A light guide window formed by anisotropic etching is provided, and light is irradiated onto the document from the other main surface side of the single crystal silicon substrate through this light guide window, so the document can be easily scanned without using an expensive imaging element. It is possible to provide an inexpensive one-dimensional image sensor with a small number of parts.
【図１】本発明に係る密着型イメージセンサを示す概略
図である。FIG. 1 is a schematic diagram showing a contact type image sensor according to the present invention.
【図２】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 2 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図３】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 3 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図４】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 4 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図５】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 5 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図６】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 6 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図７】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 7 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図８】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 8 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図９】本発明に係る密着型イメージセンサの製造工程
を示す図である。FIG. 9 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１０】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 10 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１１】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 11 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１２】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 12 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１３】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 13 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１４】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 14 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１５】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 15 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１６】本発明に係る密着型イメージセンサの製造工
程を示す図である。FIG. 16 is a diagram showing a manufacturing process of a contact type image sensor according to the present invention.
【図１７】従来の密着型イメージセンサを示す図である
。FIG. 17 is a diagram showing a conventional contact type image sensor.
１：単結晶シリコン基板 ２：受光素子 ３：導光窓 ６：原稿 1: Single crystal silicon substrate 2: Light receiving element 3: Light guiding window 6: Manuscript
Claims (1)
の受光素子を形成するとともに、この受光素子に対峙し
て走査される原稿に光を照射して反射光を前記受光素子
で読み取る密着型イメージセンサにおいて、前記単結晶
シリコン基板の受光素子部分に、異方性エッチングによ
って形成した導光窓を設け、前記単結晶シリコン基板の
他の主面側から前記導光窓を介して前記原稿に光を照射
することを特徴とする密着型イメージセンサ。1. A close-contact method in which a plurality of light-receiving elements are formed on one main surface of a single-crystal silicon substrate, light is irradiated onto a document being scanned facing the light-receiving elements, and the reflected light is read by the light-receiving element. In the type image sensor, a light guide window formed by anisotropic etching is provided in the light receiving element portion of the single crystal silicon substrate, and the document is passed from the other main surface side of the single crystal silicon substrate through the light guide window. A close-contact image sensor that is characterized by irradiating light onto the surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3097127A JPH04326656A (en) | 1991-04-26 | 1991-04-26 | Close contact type image sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3097127A JPH04326656A (en) | 1991-04-26 | 1991-04-26 | Close contact type image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04326656A true JPH04326656A (en) | 1992-11-16 |
Family
ID=14183901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3097127A Pending JPH04326656A (en) | 1991-04-26 | 1991-04-26 | Close contact type image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04326656A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111006182A (en) * | 2018-10-04 | 2020-04-14 | Zkw集团有限责任公司 | Projection arrangement for a light module of a motor vehicle headlight and method for producing a projection arrangement |
-
1991
- 1991-04-26 JP JP3097127A patent/JPH04326656A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111006182A (en) * | 2018-10-04 | 2020-04-14 | Zkw集团有限责任公司 | Projection arrangement for a light module of a motor vehicle headlight and method for producing a projection arrangement |
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