JPH04325407A - Manufacture of superhigh pressure stable phase substance - Google Patents
Manufacture of superhigh pressure stable phase substanceInfo
- Publication number
- JPH04325407A JPH04325407A JP3095026A JP9502691A JPH04325407A JP H04325407 A JPH04325407 A JP H04325407A JP 3095026 A JP3095026 A JP 3095026A JP 9502691 A JP9502691 A JP 9502691A JP H04325407 A JPH04325407 A JP H04325407A
- Authority
- JP
- Japan
- Prior art keywords
- stable phase
- pressure stable
- target
- ultra
- high pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910052582 BN Inorganic materials 0.000 claims abstract description 18
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000010432 diamond Substances 0.000 claims abstract description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 16
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 229910052796 boron Inorganic materials 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 230000002194 synthesizing effect Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 5
- 229910052575 non-oxide ceramic Inorganic materials 0.000 abstract description 2
- 239000011225 non-oxide ceramic Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000003786 synthesis reaction Methods 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005121 nitriding Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000002296 pyrolytic carbon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Carbon And Carbon Compounds (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、非酸化物セラミックス
であり、砥粒等に用いられる立方晶窒化ホウ素、ダイヤ
モンドで代表される超高圧安定相物質の粉末および／ま
たは粒の製造方法に関するものである。[Field of Industrial Application] The present invention relates to a method for producing powder and/or grains of ultra-high pressure stable phase materials such as cubic boron nitride and diamond, which are non-oxide ceramics and are used as abrasive grains. It is.
【０００２】0002
【従来の技術】従来、窒化ホウ素の合成法として、種々
の方法で提案されている。その代表的なものとしては、
酸化物をアンモニアや含窒素有機物を使って還元窒化す
る方法と、酸化物、水素化物等をアンモニアで窒化する
方法等がある。また、特公昭６２−１３２７０９号公報
に示されるような金属ホウ化物を窒素気流中で電磁誘導
加熱により加熱分解して、粉末状の窒化ホウ素を合成す
る方法が提案されている。BACKGROUND OF THE INVENTION Various methods have been proposed to synthesize boron nitride. Representative examples include:
There is a method of reducing and nitriding oxides using ammonia or a nitrogen-containing organic substance, and a method of nitriding oxides, hydrides, etc. with ammonia. Furthermore, a method has been proposed in which powdered boron nitride is synthesized by thermally decomposing a metal boride by electromagnetic induction heating in a nitrogen stream, as disclosed in Japanese Patent Publication No. 132709/1982.
【０００３】しかし、いずれの方法においても六方晶窒
化ホウ素（ｈ−ＢＮ）やＸ線回折でＪＣＰＤＳのＮｏ．
１８−２５１に示されるような種々の結晶構造を有す
る窒化ホウ素の混合物しか得られていない。高圧合成に
よる立方晶窒化ホウ素粒の作成は、ダイヤモンド以上の
超高温・高圧を必要とするため、合成コストが高価にな
るために、その使用範囲も限られたものとなる。ダイヤ
モンド粉末／粒についても高圧合成法によるため、合成
コストが高価となり使用範囲が限定されている。However, in both methods, JCPDS No.
Only mixtures of boron nitride with various crystal structures such as those shown in No. 18-251 have been obtained. Creating cubic boron nitride grains by high-pressure synthesis requires extremely high temperatures and pressures higher than that of diamond, which increases the synthesis cost and limits the scope of its use. Diamond powder/granules are also synthesized using a high-pressure method, resulting in high synthesis costs and a limited range of use.
【０００４】0004
【発明が解決しようとする課題】上記いずれの方法にお
いても、結晶性に優れた立方晶窒化ホウ素（ｃ−ＢＮ）
は得られていない。また、上記の大部分の方法では反応
温度が高温のために補助発熱体として用いるモリブデン
やタングステン等の不純物が混入し、高純度の窒化ホウ
素が得られない問題点があった。高圧合成においては、
非常にコストがかかることが問題となり、溶媒等の不純
物混入が避けられない。ダイヤモンドにおいても、高圧
合成てはコストがかかりすぎること、さらに高圧合成の
際に溶媒として用いられる金属（Ｎｉ等）が不純物とし
て混入し、高品質なダイヤモンドは生成されない。[Problems to be Solved by the Invention] In any of the above methods, cubic boron nitride (c-BN) having excellent crystallinity is used.
has not been obtained. Furthermore, most of the above methods have the problem that impurities such as molybdenum and tungsten used as auxiliary heating elements are mixed in due to the high reaction temperature, making it impossible to obtain highly pure boron nitride. In high pressure synthesis,
The problem is that it is extremely costly, and contamination with impurities such as solvents is unavoidable. Even for diamonds, high-pressure synthesis is too expensive, and metals (such as Ni) used as solvents during high-pressure synthesis are mixed in as impurities, making it impossible to produce high-quality diamonds.
【０００５】本発明は、従来法の欠点を解消し、安価で
高純度の立方晶窒化ホウ素、ダイヤモンド等の超高圧安
定相物質を容易に得ることができる新規かつ優れた製造
方法を提供するものである。[0005] The present invention provides a new and excellent manufacturing method that overcomes the drawbacks of conventional methods and can easily obtain ultra-high pressure stable phase materials such as inexpensive and highly pure cubic boron nitride and diamond. It is.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
の手段として、本発明では、液体窒素中において、超高
圧安定相物質を形成しうる原子を含むターゲット表面に
対して液体窒素にエネルギーを吸収されにくい波長を有
するレーザー光を照射することにより、超高圧安定相物
質を合成することを特徴とするものである。本発明の特
に好ましい実施態様として、前記ターゲットがホウ素ま
たは窒化ホウ素から成り、且つ前記超高圧安定相物質が
立方晶窒化ホウ素である前記方法、さらに前記ターゲッ
トが炭素から成り、且つ前記超高圧安定相物質がダイヤ
モンドである前記方法を挙げることができる。[Means for Solving the Problems] As a means for solving the above problems, in the present invention, energy is applied to a target surface containing atoms capable of forming an ultra-high pressure stable phase substance in liquid nitrogen. This method is characterized by synthesizing an ultra-high pressure stable phase material by irradiating it with laser light having a wavelength that is difficult to absorb. In a particularly preferred embodiment of the present invention, the target comprises boron or boron nitride, and the ultra-high pressure stable phase material is cubic boron nitride, and the target comprises carbon, and the ultra-high pressure stable phase material Mention may be made of said method in which the substance is diamond.
【０００７】[0007]
【作用】本発明では、例えばホウ素原子、炭素原子等の
超高圧安定相物質を形成しうる原子を含むターゲット表
面に、レーザー光をレンズ等により集光させ、この集光
したレーザー光の当たっている局部的な部分のエネルギ
ー密度を高めることにより、超高圧安定相物質、例えば
立方晶窒化ホウ素やダイヤモンドが安定に存在しうる高
温・高圧状態を実現させ、該ターゲット表面から当該超
高圧安定相物質を放出させて粉末および粒を合成する。
合成された該分粉末および／または粒は反応室に設けた
回収皿等で受けて回収される。[Operation] In the present invention, a laser beam is focused by a lens or the like on a target surface containing atoms capable of forming an ultra-high pressure stable phase substance such as boron atoms or carbon atoms, and the focused laser beam is struck by a lens or the like. By increasing the energy density of the localized portion of the target, a high-temperature and high-pressure state in which ultra-high-pressure stable phase materials such as cubic boron nitride and diamond can stably exist can be realized, and the ultra-high-pressure stable phase materials can be removed from the target surface. is released to synthesize powders and granules. The synthesized powder and/or grains are received and collected in a collection tray or the like provided in the reaction chamber.
【０００８】液体窒素中でターゲットにレーザー光を照
射するのは、■ターゲットを冷却することにより、レー
ザー照射による急速加熱によるターゲットの溶融現象を
防ぎ、レーザー照射部の急速加熱による熱膨張から起因
する圧力上昇の有効利用を可能にし、ｃ−ＢＮが安定に
存在し得る高温・高圧状態を実現させること、■ｃ−Ｂ
Ｎ，ダイヤモンドが安定に存在し得る状態である高温・
高圧状態から急冷されることにより、ｃ−ＢＮやダイヤ
モンド等がクエンチされ、ターゲット表面から液体窒素
中に放出されること、さらには■立方晶窒化ホウ素等の
窒化物においては、窒化物ターゲットを用いた場合、タ
ーゲット表面および立方晶窒化ホウ素のホウ素と窒素の
比率を１：１に保持すること、等■〜■の作用・効果が
あると、本発明者は考えている。Irradiating the target with laser light in liquid nitrogen is done because: (1) By cooling the target, the melting phenomenon of the target due to rapid heating due to laser irradiation is prevented, which is caused by thermal expansion due to rapid heating of the laser irradiated part. To make effective use of pressure increase and realize a high temperature and high pressure state in which c-BN can exist stably, ■c-B
N, at high temperatures and conditions in which diamond can exist stably.
By rapidly cooling from a high pressure state, c-BN, diamond, etc. are quenched and released from the target surface into liquid nitrogen. In this case, the present inventor believes that there are the following effects and effects, such as maintaining the boron:nitrogen ratio of the target surface and the cubic boron nitride at 1:1.
【０００９】本発明において使用可能なレーザーは、液
体窒素にエネルギーを吸収されにくい波長を有するもの
であればよい。具体的には波長１２５〜１８０ｎｍを除
く波長を有するものであればよい。但し、波長によって
高温・高圧状態が実現される機構が異なってくる。Ａｒ
Ｆ等に代表される紫外域のエキシマレーザー（波長：１
９３ｎｍ）においては、光子（フォトン）エネルギーが
直接的に高温・高圧状態に寄与する割合が大きいが、Ｃ
Ｏ２ レーザー（波長：１０．６ｎｍ）においては、熱
的エネルギーのみが高温・高圧状態に寄与していると考
えられる。[0009] The laser usable in the present invention may be any laser having a wavelength whose energy is not easily absorbed by liquid nitrogen. Specifically, any material having a wavelength other than 125 to 180 nm may be used. However, the mechanism by which high temperature and high pressure conditions are achieved differs depending on the wavelength. Ar
Excimer laser in the ultraviolet region (wavelength: 1
93 nm), photon energy directly contributes to high temperature and high pressure conditions, but C
In O2 laser (wavelength: 10.6 nm), only thermal energy is considered to contribute to the high temperature and high pressure state.
【００１０】本発明に使用する、超高圧安定相物質を形
成しうる原子を含むターゲットとして具体的には、例え
ばｃ−ＢＮ合成の場合にはホウ素の単体、六方晶窒化ホ
ウ素、バイロリティックＢＮ（ｐ−ＢＮ）、ｃ−ＢＮの
単結晶または多結晶体等が挙げられる。ダイヤモンド合
成の場合には、例えばグラファイト、パイロリティック
カーボン等である。Specifically, the targets used in the present invention containing atoms capable of forming an ultra-high pressure stable phase material include, for example, in the case of c-BN synthesis, elemental boron, hexagonal boron nitride, birolytic BN ( p-BN), c-BN single crystals or polycrystals, and the like. In the case of diamond synthesis, for example, graphite, pyrolytic carbon, etc.
【００１１】図１は本発明の１具体例の説明図である。
ターゲットホルダー４上に設置されたターゲット３と合
成された立方晶窒化ホウ素粉末および／または粒を集め
るための回収皿５が容器１内に配置されている。ターゲ
ット３には前記した超高圧安定相物質を形成しうる原子
を含む材質が使用されている。容器１内は液体窒素２で
満たされている。容器１に隣接して真空室９がある。容
器１に直接レーザー透過窓を設けてレーザー光を容器１
内に照射しようとすると、レーザー透過窓８表面が液体
窒素により冷却されているため大気中の水蒸気がレーザ
ー透過窓８表面に結露し、レーザー光を吸収したり、レ
ーザー光の集光の妨げになるため、この方法は不可能で
ある。これを回避するために真空室９を設けている。真
空室９は初期に一度数Ｔｏｒｒ程度に真空排気しておけ
ば、長期間問題なく使用が可能である。FIG. 1 is an explanatory diagram of one specific example of the present invention. A collection pan 5 is arranged in the container 1 for collecting the cubic boron nitride powder and/or grains synthesized with the target 3 placed on the target holder 4 . The target 3 is made of a material containing atoms capable of forming the above-mentioned ultra-high pressure stable phase substance. The inside of the container 1 is filled with liquid nitrogen 2. Adjacent to the container 1 is a vacuum chamber 9. A laser transmission window is provided directly on the container 1 to transmit the laser light to the container 1.
If you try to irradiate the inside of the laser, water vapor in the atmosphere will condense on the surface of the laser transmission window 8 because the surface of the laser transmission window 8 is cooled by liquid nitrogen, which may absorb the laser light or interfere with the focusing of the laser light. Therefore, this method is not possible. To avoid this, a vacuum chamber 9 is provided. The vacuum chamber 9 can be used for a long period of time without any problem if it is evacuated to several Torr at the beginning.
【００１２】レーザー装置６より発光させたレーザー光
を集光しレンズ７により集光してレーザーパワーを高め
、両側にレーザー透過窓８を有する真空室９を通し、容
器１内のターゲット３表面に照射させる。ターゲット表
面におけるレーザーパワー密度としては２０Ｊ／ｃｍ２
〜８０ＭＪ／ｃｍ２ の範囲とする。パワー密度が低
いとｃ−ＢＮが安定に存在し得る局部的な高温・高圧状
態まで到達することができない。また、パワー密度があ
まりにも高いと、液体窒素の冷却能力か追いつかず、ク
ラスター状あるいは溶融粒子となってターゲットから放
出され、低温安定相であるｈ−ＢＮやアモルファス状の
ＢＮが生成されることになる。The laser beam emitted from the laser device 6 is focused by a lens 7 to increase the laser power, and is passed through a vacuum chamber 9 having laser transmission windows 8 on both sides to the surface of the target 3 in the container 1. irradiate. Laser power density on target surface is 20J/cm2
The range is 80 MJ/cm2. If the power density is low, it is impossible to reach a local high temperature and high pressure state where c-BN can stably exist. In addition, if the power density is too high, the cooling capacity of liquid nitrogen cannot keep up with it, and it becomes clusters or molten particles that are released from the target, producing h-BN, which is a low-temperature stable phase, and amorphous BN. become.
【００１３】[0013]
【実施例】以下、実施例を挙げて本発明を具体的に説明
するが、本発明はこれに限定されるものではない。[Examples] The present invention will be specifically explained below with reference to Examples, but the present invention is not limited thereto.
【００１４】実施例１
本実施例では図１の構成において、ターゲット３として
ｐ−ＢＮを用い、レーザーパワー密度として２ｋＪ／ｃ
ｍ２ と１０ＭＪ／ｃｍ２ で行った。レーザー光源と
しては、ＡｒＦ（波長１９３ｎｍ）エキシマレーザーを
用いた。
合成された粉末および／または粒の粒径は、レ−ザーパ
ワー密度２ｋＪ／ｃｍ２ のとき〜０．０５μｍ径のも
のが得られ、１０ＭＪ／ｃｍ２ のときは〜０．１μｍ
径のものが得られた。Example 1 In this example, p-BN is used as the target 3 in the configuration shown in FIG. 1, and the laser power density is 2 kJ/c.
m2 and 10 MJ/cm2. As a laser light source, an ArF (wavelength: 193 nm) excimer laser was used. The particle size of the synthesized powder and/or particles is ~0.05 μm when the laser power density is 2 kJ/cm2, and ~0.1 μm when the laser power density is 10 MJ/cm2.
diameter was obtained.
【００１５】以上で得られた粉末をＸ線回折により結晶
構造を同定すると、両方ともにＪＣＰＤＳのＮｏ． ３
５−１３６５（立方晶窒化ホウ素）とよく一致した。ま
た、１１１面での半値幅も、それぞれ０．４２°および
０．３６°と結晶性も良好なものが得られた。When the crystal structures of the powders obtained above were identified by X-ray diffraction, both were found to be No. 1 in JCPDS. 3
5-1365 (cubic boron nitride). Further, the half-width at the 111 plane was 0.42° and 0.36°, respectively, and good crystallinity was obtained.
【００１６】実施例２
図１の構成において、ターゲット３としてグラファイト
を用い、レーザーパワー密度を２０ＭＪ／ｃｍ２ とし
て、ダイヤモンドを合成した。レーザー光源としては、
実施例１と同様にＡｒＦ（波長１９３ｎｍ）エキシマレ
ーザーを用いた。得られた粉末の粒径は、〜０．２μｍ
であった。この粉末をＸ線回折により評価した結果、結
晶性が良いことが確認された。Example 2 In the configuration shown in FIG. 1, diamond was synthesized using graphite as the target 3 and a laser power density of 20 MJ/cm2. As a laser light source,
As in Example 1, an ArF (wavelength: 193 nm) excimer laser was used. The particle size of the obtained powder is ~0.2 μm
Met. As a result of evaluating this powder by X-ray diffraction, it was confirmed that it had good crystallinity.
【００１７】[0017]
【発明の効果】以上のように本発明は非常に安価な装置
で、高品質なｃ−ＢＮ、ダイヤモンド等の超高圧安定相
物質の粉末および／または粒を製造できる方法を提供す
るものである。[Effects of the Invention] As described above, the present invention provides a method for producing powder and/or grains of high-quality ultra-high pressure stable phase materials such as c-BN and diamond using extremely inexpensive equipment. .
【図１】本発明の一具体例により示す概略説明図である
。FIG. 1 is a schematic explanatory diagram showing a specific example of the present invention.
１ 容器 ２ 液体窒素 ３ ターゲット ４ ターゲットホルダ ５ 回収皿 ６ レーザー ７ 集光用レンズ ８ レーザー透過窓 ９ 真空室 1 Container 2. Liquid nitrogen 3 Target 4 Target holder 5 Collection plate 6 Laser 7. Focusing lens 8 Laser transmission window 9 Vacuum chamber
Claims (3)
質を形成しうる原子を含むターゲット表面に対して液体
窒素にエネルギーを吸収されにくい波長を有するレーザ
ー光を照射することにより、超高圧安定相物質を合成す
ることを特徴とする超高圧安定相物質の製造方法。1. In liquid nitrogen, by irradiating a target surface containing atoms capable of forming an ultra-high-pressure stable phase substance with a laser beam having a wavelength at which energy is difficult to be absorbed by liquid nitrogen, an ultra-high-pressure stable phase substance is formed. A method for producing an ultra-high pressure stable phase material, the method comprising synthesizing the material.
ウ素から成り、且つ前記超高圧安定相物質が立方晶窒化
ホウ素であることを特徴とする請求項１の超高圧安定相
物質の製造方法。2. The method for producing an ultra-high pressure stable phase material according to claim 1, wherein the target is made of boron or boron nitride, and the ultra-high pressure stable phase material is cubic boron nitride.
前記超高圧安定相物質がダイヤモンドであることを特徴
とする請求項１の超高圧安定相物質の製造方法。3. The method for producing an ultra-high pressure stable phase material according to claim 1, wherein the target is made of carbon, and the ultra-high pressure stable phase material is diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3095026A JPH04325407A (en) | 1991-04-25 | 1991-04-25 | Manufacture of superhigh pressure stable phase substance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3095026A JPH04325407A (en) | 1991-04-25 | 1991-04-25 | Manufacture of superhigh pressure stable phase substance |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04325407A true JPH04325407A (en) | 1992-11-13 |
Family
ID=14126584
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3095026A Pending JPH04325407A (en) | 1991-04-25 | 1991-04-25 | Manufacture of superhigh pressure stable phase substance |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04325407A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007210869A (en) * | 2006-02-13 | 2007-08-23 | Tohoku Univ | Manufacturing method of monodisperse nano-diamond particle |
| CN103657564A (en) * | 2013-10-12 | 2014-03-26 | 江苏大学 | Device and method for preparing nano diamonds by high-energy lamp pumping solid laser |
| JP2015506887A (en) * | 2011-06-26 | 2015-03-05 | レイ テクニクス リミテッド | Methods and systems for controlled synthesis of nanodiamonds |
-
1991
- 1991-04-25 JP JP3095026A patent/JPH04325407A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007210869A (en) * | 2006-02-13 | 2007-08-23 | Tohoku Univ | Manufacturing method of monodisperse nano-diamond particle |
| JP2015506887A (en) * | 2011-06-26 | 2015-03-05 | レイ テクニクス リミテッド | Methods and systems for controlled synthesis of nanodiamonds |
| US9636650B2 (en) | 2011-06-26 | 2017-05-02 | Ray Techniques Ltd. | Method and system for controlled synthesis of nanodiamonds |
| CN103657564A (en) * | 2013-10-12 | 2014-03-26 | 江苏大学 | Device and method for preparing nano diamonds by high-energy lamp pumping solid laser |
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