JPH04312752A - Electron tube device - Google Patents
Electron tube deviceInfo
- Publication number
- JPH04312752A JPH04312752A JP3079302A JP7930291A JPH04312752A JP H04312752 A JPH04312752 A JP H04312752A JP 3079302 A JP3079302 A JP 3079302A JP 7930291 A JP7930291 A JP 7930291A JP H04312752 A JPH04312752 A JP H04312752A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- cathode
- electron
- substrate
- tube device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000004304 visual acuity Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910001338 liquidmetal Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910007277 Si3 N4 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Electrodes For Cathode-Ray Tubes (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は電子管装置に関するもの
で、特に詳細には、ビジコンなどの撮像管に使用される
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electron tube device, and more particularly, it is used in an image pickup tube such as a vidicon.
【0002】0002
【従来の技術】従来、ビジコンのカソード(陰極)とし
ては、熱陰極が用いられている。しかし、この場合には
放出電子の初速分布が大きく、残像が生じやすい。また
、ヒータを用いるためターゲットが温度上昇しやすく、
暗電流が大きくなる欠点があった。2. Description of the Related Art Conventionally, a hot cathode has been used as the cathode of a vidicon. However, in this case, the initial velocity distribution of emitted electrons is large, and afterimages are likely to occur. In addition, since a heater is used, the temperature of the target tends to rise.
There was a drawback that the dark current increased.
【0003】このような欠点の解消を目的とした電子管
(例えばブラウン管)としては特開昭63−13644
3号に示されるものが知られている。ここでは、電子放
出源として、Ga−In−Snなどの液体金属が用いら
れている。これによれば、ヒータを用いる必要がなくな
り、またビーム径を小さくすることも可能になる。[0003] As an electron tube (for example, a cathode ray tube) aimed at eliminating such drawbacks, Japanese Patent Application Laid-Open No. 63-13644
The one shown in No. 3 is known. Here, a liquid metal such as Ga-In-Sn is used as an electron emission source. According to this, there is no need to use a heater, and it is also possible to reduce the beam diameter.
【0004】0004
【発明が解決しようとする課題】しかし、上記の従来技
術では、液体金属を用意することが必要になり、また十
分なビーム径の細径化を達成することも難しい。However, with the above-mentioned prior art, it is necessary to prepare liquid metal, and it is also difficult to achieve a sufficient reduction in the beam diameter.
【0005】本発明はかかる事情を考慮してなされたも
ので、低コストで、かつビーム径を十分に小さく絞るこ
とができ、従って画像の高分解能化を図ることができ、
しかも長寿命にすることのできる電子管装置を堤供する
ことを目的とする。[0005] The present invention has been made in consideration of the above circumstances, and it is possible to reduce the beam diameter to a sufficiently small size at low cost, and therefore, it is possible to achieve high resolution of images.
Moreover, it is an object of the present invention to provide an electron tube device that can have a long life.
【0006】[0006]
【課題を解決するための手段】本発明に係る電子管装置
は、電子ビームを生成する電子ビーム源と、電子ビーム
を集束および偏向する電子光学系と、偏向された電子ビ
ームによって走査されるターゲットとを備え、上記の電
子ビーム源は、基板と、この基板から突出して設けられ
た先鋭な陰極と、この陰極から絶縁されて基板に設けら
れた制御電極とを含み、陰極と制御電極の間には、電子
ビームによる走査の帰線期間以外の期間のみ、当該陰極
から電子の電界放出が生じ得る閾値以上の電位差が与え
られていることを特徴とする。[Means for Solving the Problems] An electron tube device according to the present invention includes an electron beam source that generates an electron beam, an electron optical system that focuses and deflects the electron beam, and a target that is scanned by the deflected electron beam. The above electron beam source includes a substrate, a sharp cathode provided protruding from the substrate, and a control electrode provided on the substrate and insulated from the cathode, and between the cathode and the control electrode. is characterized in that a potential difference equal to or higher than a threshold value at which field emission of electrons can occur from the cathode is applied only during a period other than the retrace period of scanning by the electron beam.
【0007】[0007]
【作用】本発明の構成によれば、制御電極との間の電位
差によって、陰極の先端から電子が電界放出させられ、
電子ビームが形成される。また、帰線期間の電位差を閾
値以下とすることで、帰線期間に電子ビームがターゲッ
トに照射されないようにできる。[Operation] According to the structure of the present invention, electrons are field-emitted from the tip of the cathode due to the potential difference between the control electrode and the control electrode.
An electron beam is formed. Further, by setting the potential difference during the retrace period to a threshold value or less, it is possible to prevent the target from being irradiated with the electron beam during the retrace period.
【0008】[0008]
【実施例】以下、添付図面を参照して本発明の実施例を
説明する。図1は実施例に係わるビジコンの概念的構成
を示す図である。図示の通り、このビジコンは、電子ビ
ーム源である電界放出型の電子源1と、電子源1からの
電子ビームEBを加速する加速電極2と、電子ビームE
Bを垂直方向に偏向させる垂直偏向電極3と、水平方向
に偏向させる水平偏向電極4と、電子ビーム集束させる
ための電子レンズを構成する集束コイル5と、電子ビー
ムの均一な減速電場を形成させるメッシュ電極99と、
出力面板6の内面に形成された光導電ターゲット7とを
有し、図示しない真空容器に収容されている。電子源1
はシリコン基板11を有し、この中央部には、電子放出
部すなわち陰極となる例えば高さ2μmのピラミッド状
突起12が形成されている。そして、ピラミッド状突起
12の周辺のシリコン基板11上には、ピラミッド状突
起12の高さより少し厚い、例えば3.5μm厚の、と
同程度の厚さのSiO2 やSi3 N4 などからな
る絶縁膜13が形成され、この上面にはA1膜からなる
制御電極14が設けられている。そして、制御電極14
は支持部材15に導電性接着剤により固定され、この支
持部材15の他端は図示しない真空容器に固定されてい
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a diagram showing a conceptual configuration of a vidicon according to an embodiment. As shown in the figure, this vidicon includes a field emission type electron source 1 that is an electron beam source, an accelerating electrode 2 that accelerates the electron beam EB from the electron source 1, and an electron beam E.
A vertical deflection electrode 3 that deflects B in the vertical direction, a horizontal deflection electrode 4 that deflects B in the horizontal direction, and a focusing coil 5 that constitutes an electron lens for focusing the electron beam, forming a uniform deceleration electric field for the electron beam. mesh electrode 99;
It has a photoconductive target 7 formed on the inner surface of the output face plate 6, and is housed in a vacuum container (not shown). Electron source 1
has a silicon substrate 11, and a pyramid-shaped protrusion 12 having a height of, for example, 2 μm is formed in the center thereof to serve as an electron emitting portion, that is, a cathode. Then, on the silicon substrate 11 around the pyramid-shaped protrusion 12, an insulating film 13 made of SiO2, Si3 N4, etc., is slightly thicker than the height of the pyramid-shaped protrusion 12, for example, 3.5 μm thick, and has a similar thickness. is formed, and a control electrode 14 made of an A1 film is provided on its upper surface. And the control electrode 14
is fixed to a support member 15 with a conductive adhesive, and the other end of this support member 15 is fixed to a vacuum container (not shown).
【0009】上記の構造において、シリコン基板11を
アースとして制御電極14に100V程度の電圧を印加
すると、ピラミッド状突起12の先端から電界放出によ
り電子が放出される。この電子は電子ビームEBとなっ
て加速電極2により加速され、集束コイル5によって集
束されて光導電ターゲット7に入射する。このとき、垂
直偏向電極3および水平偏向電極4に偏向電圧を印加し
ておけば、電子ビームEBは水平方向(H)および垂直
方向(V)に偏向され、したがって光導電ターゲット7
は電子ビームEBによって二次元的に走査される。In the above structure, when a voltage of about 100 V is applied to the control electrode 14 with the silicon substrate 11 grounded, electrons are emitted from the tips of the pyramidal protrusions 12 by field emission. The electrons become an electron beam EB, which is accelerated by the accelerating electrode 2, focused by the focusing coil 5, and incident on the photoconductive target 7. At this time, if a deflection voltage is applied to the vertical deflection electrode 3 and the horizontal deflection electrode 4, the electron beam EB is deflected in the horizontal direction (H) and the vertical direction (V), so that the photoconductive target 7
is scanned two-dimensionally by the electron beam EB.
【0010】ところで、光導電ターゲット7の走査にお
いては、1回の水平走査ごとに1回の帰線期間(水平帰
線期間)が必要になり、また1画面(フレーム)の走査
ごとに1回の垂直走査期間が必要になる。本発明では、
このため制御電極14にかかる制御電圧VC を、帰線
期間において閾値以下としている。By the way, in scanning the photoconductive target 7, one retrace period (horizontal retrace period) is required for each horizontal scan, and one retrace period is required for each scan of one screen (frame). vertical scanning period is required. In the present invention,
For this reason, the control voltage VC applied to the control electrode 14 is kept below the threshold during the retrace period.
【0011】上記のような電子ビームEBの高速のON
、OFFは、本発明のような電界放出型ターゲットを用
いることで特に効果的となる。すなわち、特開昭63−
136443号のように液体金属を電子放出源に用いる
ものでは、溶融金属自身の表面張力と引出し電極による
静電応力との釣り合いにより微小突起を形成しているた
め、帰線期間に電位を下げることは難しいが、本発明の
構成では、かかる不都合は全く生じない。[0011] High-speed ON of the electron beam EB as described above
, OFF becomes particularly effective by using a field emission target like the one of the present invention. That is, JP-A-63-
In devices such as No. 136443 that use liquid metal as an electron emission source, minute protrusions are formed by the balance between the surface tension of the molten metal itself and the electrostatic stress caused by the extraction electrode, so the potential must be lowered during the retrace period. However, with the configuration of the present invention, such inconvenience does not occur at all.
【0012】図2は実施例のビジコンに用い得る電子源
1の別のタイプを示している。この例では、シリコン基
板11が支持部材15に固定されている。従って、この
場合には、シリコン基板11と制御電極14にリード線
(図示せず)等を接続し、これらの間に制御電圧VC
を印加することが必要となる。なお、加速電極2には2
00V程度のバイアスを与えればよい。FIG. 2 shows another type of electron source 1 that can be used in the vidicon of the embodiment. In this example, silicon substrate 11 is fixed to support member 15 . Therefore, in this case, a lead wire (not shown) or the like is connected to the silicon substrate 11 and the control electrode 14, and the control voltage VC is connected between them.
It is necessary to apply Note that the accelerating electrode 2 has 2
A bias of approximately 00V may be applied.
【0013】図3は更に別のタイプの電子源1を示して
いる。この場合には、支持部材15はガラスなどの絶縁
物で形成され、この上に金属が被着されることで制御電
極14と突起を有する電界放出陰極120が形成されて
いる。そして、制御電極14および電界放出陰極120
上には、絶縁膜17を介して加速電極2が設けられてい
る。FIG. 3 shows yet another type of electron source 1. In this case, the support member 15 is made of an insulating material such as glass, and metal is deposited thereon to form the control electrode 14 and the field emission cathode 120 having projections. Then, the control electrode 14 and the field emission cathode 120
An accelerating electrode 2 is provided thereon with an insulating film 17 interposed therebetween.
【0014】図4は、シリコン基板11に微細加工技術
によって複数のピラミッド状突起12を設けた例を示し
ている。そして、同図(a)は複数のピラミッド状突起
12に対して1つの制御電極14が設けられているのに
対し、同図(b)では複数のピラミッド状突起12に対
して複数の制御電極14が設けられている。これらの場
合には電子ビーム量を大きくし、かつ、個々の電界放出
陰極の放出電流バラツキが平均化されるという長所があ
る。FIG. 4 shows an example in which a plurality of pyramidal protrusions 12 are provided on a silicon substrate 11 by microfabrication technology. In the figure (a), one control electrode 14 is provided for a plurality of pyramidal protrusions 12, whereas in the figure (b), a plurality of control electrodes are provided for a plurality of pyramidal protrusions 12. 14 are provided. These cases have the advantage that the amount of electron beam can be increased and that variations in the emission current of individual field emission cathodes can be averaged out.
【0015】図5は更に別のタイプの電子源1を示して
いる。この電子源1が図2と異なる点は、制御電極14
上に絶縁膜18を介して調整電極19が設けられている
ことである。この調整電極19に適当なバイアスを印加
すると、電子ビームEBの角度分布を調整することが可
能になる。上記説明ではビジコンを例としたが、本発明
は他にSEM(走査型電子顕微鏡)にも適用できる。FIG. 5 shows yet another type of electron source 1. The difference between this electron source 1 and that in FIG. 2 is that the control electrode 14
An adjustment electrode 19 is provided thereon with an insulating film 18 interposed therebetween. By applying an appropriate bias to this adjustment electrode 19, it becomes possible to adjust the angular distribution of the electron beam EB. In the above description, a vidicon was used as an example, but the present invention can also be applied to an SEM (scanning electron microscope).
【0016】[0016]
【発明の効果】以上、詳細に説明した通り本発明では、
制御電極との間の電位差によって、陰極の先端から電子
が電界放出させられ、電子ビームが形成される。また、
帰線期間の電位差を閾値以下とすることで、帰線期間に
電子ビームがターゲットに照射されないようにできる。
したがって、加熱のためのヒータを用いる必要がなく、
暗電流の少ない、低残像高解像度の撮像管が可能になる
。[Effects of the Invention] As explained above in detail, the present invention provides
Due to the potential difference between the cathode and the control electrode, electrons are field-emitted from the tip of the cathode, forming an electron beam. Also,
By setting the potential difference during the retrace period to a threshold value or less, it is possible to prevent the target from being irradiated with the electron beam during the retrace period. Therefore, there is no need to use a heater for heating.
It becomes possible to create an image pickup tube with low dark current, low afterimage, and high resolution.
【図1】実施例に係るビジコンの構成図である。FIG. 1 is a configuration diagram of a vidicon according to an embodiment.
【図2】実施例のビジコンに用い得る電界放出型ので電
子源の第1の例の構成図である。FIG. 2 is a configuration diagram of a first example of a field emission type electron source that can be used in the vidicon of the embodiment.
【図3】実施例のビジコンに用い得る電界放出型ので電
子源の第2の例の構成図である。FIG. 3 is a configuration diagram of a second example of a field emission type electron source that can be used in the vidicon of the embodiment.
【図4】実施例のビジコンに用い得る電界放出型ので電
子源の第3の例の構成図である。FIG. 4 is a configuration diagram of a third example of a field emission type electron source that can be used in the vidicon of the embodiment.
【図5】実施例のビジコンに用い得る電界放出型ので電
子源の第4の例の構成図である。FIG. 5 is a configuration diagram of a fourth example of a field emission type electron source that can be used in the vidicon of the embodiment.
1…電子源 11…シリコン基板 12…ピラミッド状突起 120…電界放出陰極 13…絶縁膜 14…制御電極 19…調整電極 EB…電子ビーム 2…加速電極 3…垂直偏向電極 4…水平偏向電極 5…集束コイル 1...electron source 11...Silicon substrate 12...Pyramid-shaped process 120...Field emission cathode 13...Insulating film 14...Control electrode 19...Adjustment electrode EB…electron beam 2...Acceleration electrode 3...Vertical deflection electrode 4...Horizontal deflection electrode 5...Focusing coil
Claims (3)
、前記電子ビームを集束および偏向する電子光学系と、
偏向された電子ビームによって走査されるターゲットと
を備える電子管装置において、前記電子ビーム源は、基
板と、この基板から突出して設けられた先鋭な陰極と、
この陰極から絶縁されて前記基板に設けられた制御電極
とを含み、前記陰極と前記制御電極の間には、前記電子
ビームによる走査の帰線期間以外の期間のみ、当該陰極
から電子の電界放出が生じ得る閾値以上の電位差が与え
られていることを特徴とする電子管装置。1. An electron beam source that generates an electron beam; an electron optical system that focuses and deflects the electron beam;
In an electron tube device including a target scanned by a deflected electron beam, the electron beam source includes a substrate, a sharp cathode protruding from the substrate,
and a control electrode insulated from the cathode and provided on the substrate, and between the cathode and the control electrode, field emission of electrons from the cathode occurs only during a period other than the retrace period of scanning by the electron beam. 1. An electron tube device characterized in that a potential difference greater than a threshold value that can cause is applied.
1記載の電子管装置。2. The electron tube device according to claim 1, wherein the sharp cathode comprises a plurality of cathodes.
制御電極から絶縁されて前記基板に設けられた調整電極
を更に含み、この調整電極には所定の直流電圧が印加さ
れている請求項1記載の電子管装置。3. The electron beam source further includes an adjustment electrode provided on the substrate and insulated from the cathode and control electrode, and a predetermined DC voltage is applied to the adjustment electrode. electron tube device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3079302A JPH04312752A (en) | 1991-04-11 | 1991-04-11 | Electron tube device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3079302A JPH04312752A (en) | 1991-04-11 | 1991-04-11 | Electron tube device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04312752A true JPH04312752A (en) | 1992-11-04 |
Family
ID=13686049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3079302A Pending JPH04312752A (en) | 1991-04-11 | 1991-04-11 | Electron tube device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04312752A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744063B2 (en) | 2000-01-14 | 2004-06-01 | Pioneer Corporation | Image pickup device including electron-emitting devices |
WO2007148532A1 (en) * | 2006-06-23 | 2007-12-27 | Olympus Corporation | Illuminating device, illuminating method, light detector and light detecting method |
-
1991
- 1991-04-11 JP JP3079302A patent/JPH04312752A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6744063B2 (en) | 2000-01-14 | 2004-06-01 | Pioneer Corporation | Image pickup device including electron-emitting devices |
WO2007148532A1 (en) * | 2006-06-23 | 2007-12-27 | Olympus Corporation | Illuminating device, illuminating method, light detector and light detecting method |
JP2008004452A (en) * | 2006-06-23 | 2008-01-10 | Olympus Corp | Illumination device, illumination method, optical detector, and light detection method |
US8129687B2 (en) | 2006-06-23 | 2012-03-06 | Olympus Corporation | Lighting system, method of lighting, optical detector, and method of optical detection |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3023336A (en) | Cathode ray tube having post acceleration | |
US3928784A (en) | Television camera tube with control diaphragm | |
US2147760A (en) | Television apparatus | |
US4205252A (en) | Flat cathode ray tube with repeller electrode | |
US7196723B2 (en) | Streak apparatus with focus | |
CA1135774A (en) | Cathode-ray tube with low anode potential preventing positive ion formation | |
US2251332A (en) | Cathode ray device | |
US2880342A (en) | Electron beam for a cathode ray tube | |
JPH04312752A (en) | Electron tube device | |
JPH0785812A (en) | Crt electron gun having electron-beam-divergence-angle controlled by current quantity | |
JP2572388B2 (en) | Strike tube | |
US2520244A (en) | Television pickup tube | |
JP2737616B2 (en) | Field emission cathodes for cathode ray tubes and cathode ray tubes | |
US2914696A (en) | Electron beam device | |
JP2563282B2 (en) | Flat cathode ray tube | |
US3035196A (en) | Television camera tubes | |
KR100349901B1 (en) | Electron gun for color cathode ray tube | |
JPH0352169B2 (en) | ||
US5218443A (en) | Television camera tube with spurious image black-out screen | |
KR100267977B1 (en) | Electron gun for cathode ray tube | |
US4121255A (en) | Television camera apparatus | |
EP0206216A1 (en) | Cathode ray tube | |
RU2106715C1 (en) | Electron optical camera | |
JPH1186770A (en) | Scanning electron microscope | |
US4705985A (en) | Cathode-ray tube and electron gun structure therefor |