JPH04294579A - Mos semiconductor device - Google Patents

Mos semiconductor device

Info

Publication number
JPH04294579A
JPH04294579A JP8347891A JP8347891A JPH04294579A JP H04294579 A JPH04294579 A JP H04294579A JP 8347891 A JP8347891 A JP 8347891A JP 8347891 A JP8347891 A JP 8347891A JP H04294579 A JPH04294579 A JP H04294579A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
electrodes
lower
side wall
7h
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8347891A
Inventor
Yukihiro Oketa
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enlarge the storage capacity of a memory cell by forming at least one gap section having such a side wall that is formed perpendicularly to the principal surface of a semiconductor substrate and extended to the lower ends of the lower electrodes of a stacked capacitor from the upper ends of the electrodes to the lower ends of the electrodes.
CONSTITUTION: Lower electrodes 7 are connected to the drain area 5 of an access transistor through a contact hole C1 formed through a gate oxide film 3 and interlayer insulating film 6. The electrodes 7 have openings 7a-7h which have square cross sections and reach the lower surfaces of the electrodes 7 from the upper surfaces. The side wall of the openings 7a-7h is formed perpendicularly to the principal surface of a semiconductor substrate 1. A dielectric film 8 forms a stacked capacitor on the electrodes 7. The storage capacity of the memory cell can be increased, because the effective area of the electrodes 7 is increased by the surface of the side wall.
COPYRIGHT: (C)1992,JPO&Japio
JP8347891A 1991-03-22 1991-03-22 Mos semiconductor device Pending JPH04294579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8347891A JPH04294579A (en) 1991-03-22 1991-03-22 Mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8347891A JPH04294579A (en) 1991-03-22 1991-03-22 Mos semiconductor device

Publications (1)

Publication Number Publication Date
JPH04294579A true true JPH04294579A (en) 1992-10-19

Family

ID=13803578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8347891A Pending JPH04294579A (en) 1991-03-22 1991-03-22 Mos semiconductor device

Country Status (1)

Country Link
JP (1) JPH04294579A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5872373A (en) * 1996-11-18 1999-02-16 Oki Electric Industry Co., Ltd. Dram-capacitor structure
US6262449B1 (en) * 1995-09-18 2001-07-17 Vanguard International Semiconductor Corporation High density dynamic random access memory cell structure having a polysilicon pillar capacitor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6262449B1 (en) * 1995-09-18 2001-07-17 Vanguard International Semiconductor Corporation High density dynamic random access memory cell structure having a polysilicon pillar capacitor
US5872373A (en) * 1996-11-18 1999-02-16 Oki Electric Industry Co., Ltd. Dram-capacitor structure
US6096601A (en) * 1996-11-18 2000-08-01 Oki Electric Industry Co., Ltd. Method of making a transistor and capacitor structure with a conductive pillar

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