JPH04290429A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04290429A JPH04290429A JP5501091A JP5501091A JPH04290429A JP H04290429 A JPH04290429 A JP H04290429A JP 5501091 A JP5501091 A JP 5501091A JP 5501091 A JP5501091 A JP 5501091A JP H04290429 A JPH04290429 A JP H04290429A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- carbon atoms
- ion
- implanted
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 8
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 8
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 8
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 8
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 7
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 5
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 8
- 150000002430 hydrocarbons Chemical class 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 9
- 229910052731 fluorine Inorganic materials 0.000 abstract description 6
- 239000007789 gas Substances 0.000 abstract description 6
- 229910052799 carbon Inorganic materials 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 3
- 238000002513 implantation Methods 0.000 abstract description 2
- 239000011737 fluorine Substances 0.000 abstract 2
- -1 fluorine hydrocarbon Chemical class 0.000 abstract 2
- 238000000992 sputter etching Methods 0.000 abstract 2
- 238000005530 etching Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は半導体装置の製造方法
に関する。詳しくはＳｉ基板上に設けられたＳｉＯ２膜
の反応性イオンエッチング法（ＲＩＥ法）の改良法に関
し特にＳｉ基板の結晶欠陥を減少させる方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device. More specifically, the present invention relates to a method for improving reactive ion etching (RIE) of a SiO2 film provided on a Si substrate, and particularly to a method for reducing crystal defects in a Si substrate.
【０００２】0002
【従来の技術及び課題】ＭＯＳデバイスのような半導体
装置において微細なコンタクトーホールを形成するのに
、通常ＲＩＥ法を利用している。すなわち図１の（ａ）
と（ｂ）に示すようにＳｉ基板１の上に、ＳｉＯ２膜２
とパターンレジスト層３を設け４の矢印に示す方向にＲ
ＩＥ法でエッチングしてコンタクトホール５を作製する
。このとき、ＲＩＥ法の反応ガスとして、例えば、ＣＨ
Ｆ３／ＣＦ４／Ａｒ（４０／５／６０ＳＣＣＭ）のよう
な混合ガスが用いられる。その結果放電して加速された
イオン種ＣＦ３＋などが、Ｓｉ基板上に設けられたＳｉ
Ｏ２膜に打ちこまれてエッチングが行われＳｉＯ２膜が
除かれる。しかしその際オーバーエッチングが起こりＣ
Ｆ３＋がＳｉ基板にまで打込まれ、そのため分解生成物
のＣ、Ｆなどの不純物がＳｉ基板内に導入されてＳｉ基
板に結晶欠陥部６が生じ、コンタクト抵抗および接合リ
ーク特性を劣化させる。したがって、この欠陥を低減さ
せることが要望されている。2. Description of the Related Art The RIE method is usually used to form fine contact holes in semiconductor devices such as MOS devices. In other words, (a) in Figure 1
As shown in (b), a SiO2 film 2 is placed on the Si substrate 1.
A patterned resist layer 3 is provided and R is applied in the direction shown by the arrow 4.
A contact hole 5 is created by etching using the IE method. At this time, for example, CH
A gas mixture such as F3/CF4/Ar (40/5/60 SCCM) is used. As a result, ion species such as CF3+, which are discharged and accelerated, are transferred to the Si substrate provided on the Si substrate.
The SiO2 film is removed by being etched into the O2 film. However, over-etching occurs at this time.C
F3+ is implanted into the Si substrate, and therefore impurities such as C and F, which are decomposition products, are introduced into the Si substrate, causing crystal defects 6 in the Si substrate and deteriorating contact resistance and junction leakage characteristics. Therefore, it is desired to reduce this defect.
【０００３】0003
【課題を解決するための手段】上記のような問題点を解
決するために、この発明は半導体装置のＳｉ基板上に設
けられたＳｉＯ２膜に対し、少なくとも３個の炭素原子
を有するフッ素化炭化水素を少なくとも１つ含有する反
応ガスを用いて反応性イオンエッチングを行うことから
なる半導体装置の製造方法を提供するものである。[Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a fluorinated carbide film having at least three carbon atoms for a SiO2 film provided on a Si substrate of a semiconductor device. The present invention provides a method for manufacturing a semiconductor device, which comprises performing reactive ion etching using a reactive gas containing at least one hydrogen element.
【０００４】この発明において、Ｓｉ基板上に設けられ
たＳｉＯ２膜には、ＣＶＤ法で積層される高温酸化膜（
ＨＴＯ膜）、ＢＰＳＧ膜（ホウ素−リンケイ酸ガラス膜
）、ＮＳＧ膜（ノンドープトガラス膜）、ＰＳＧ、ＢＳ
Ｇなどが含まれる。In this invention, the SiO2 film provided on the Si substrate is coated with a high-temperature oxide film (
HTO film), BPSG film (boron-phosphosilicate glass film), NSG film (non-doped glass film), PSG, BS
Includes G.
【０００５】この発明において、少なくとも３個の炭素
原子を有するフッ素化炭化水素には、Ｃ３Ｆ８、Ｃ４Ｆ
８などが含まれる。またこれらのフッ素化炭化水素は、
単独もしくは複数で用いられ、その外、Ａｒ、Ｈｅなど
のガスを希釈のために添加してもよい。In this invention, the fluorinated hydrocarbons having at least 3 carbon atoms include C3F8, C4F
8 etc. are included. In addition, these fluorinated hydrocarbons
They may be used alone or in combination, and gases such as Ar and He may be added for dilution.
【０００６】従来主に使われているＣＦ４と、本願発明
で用いる例えばＣ３Ｆ８とＣ４Ｆ８は下記のようにイオ
ン化されるが炭素原子数が大きいほど生成するイオン種
の分子量が大きくかつ安定性が向上する。したがってオ
ーバーエッチングでＳｉ基板にまでイオン種が打こまれ
ても、従来用いられているＣＦ４よりもＣ３Ｆ８とＣ４
Ｆ８の方が、生成するイオン種の打こまれる深さが浅く
なるとともに導入されるＣ、Ｆなどの不純物が少ないの
でＳｉ基板の結晶欠陥が減少する。特にＣ４Ｆ８ガスは
分子中に２重結合を有しておりさらに分子量も大きく、
一般にプラズマ中での安定性が良い。
ＣＦ４＋ｅ →ＣＦ３＋＋Ｆ・＋２ｅCF4, which has been mainly used in the past, and C3F8 and C4F8, which are used in the present invention, are ionized as shown below, and the larger the number of carbon atoms, the larger the molecular weight of the generated ion species and the better the stability. . Therefore, even if ion species are implanted into the Si substrate due to over-etching, C3F8 and C4
In F8, the implantation depth of generated ion species is shallower, and fewer impurities such as C and F are introduced, so crystal defects in the Si substrate are reduced. In particular, C4F8 gas has double bonds in its molecules and has a large molecular weight.
Generally stable in plasma. CF4+e →CF3++F・+2e
【化１】[Chemical formula 1]
【０００７】[0007]
【化２】[Case 2]
【０００８】[0008]
【実施例】Ｓｉ基板上に常圧の条件下で厚みが９０００
ÅのＢＰＳＧ膜を堆積させ、その上にパターンレジスト
を作製した。次にＣ４Ｆ８／ＣＨ２Ｆ２（１５：１０Ｓ
ＣＣＭ）の混合ガスを反応ガスとして用いて５ｍＴｏｒ
ｒの条件下でＲＩＥエッチングを行った。[Example] The thickness was 9000 mm on a Si substrate under normal pressure conditions.
A BPSG film having a thickness of 1.5 Å was deposited, and a patterned resist was formed thereon. Next, C4F8/CH2F2 (15:10S
5mTor using a mixed gas of CCM) as a reaction gas.
RIE etching was performed under conditions of r.
【０００９】一方、比較従来例として反応ガスとしてＣ
ＨＦ３／ＣＦ４／Ａｒ（４０：５：６０ＳＣＣＭ）を用
いる以外は上記と同じ条件下でＲＩＥエッチングを行っ
た。On the other hand, as a comparative conventional example, C was used as the reaction gas.
RIE etching was performed under the same conditions as above except that HF3/CF4/Ar (40:5:60 SCCM) was used.
【００１０】生成物のＳｉ基板にイオン種が打込まれた
深さをＴＥＭ法で測定したところ前者が約１５０Åで後
者が約５００Åであった。また前者の本願発明の方法で
得られたＳｉ基板の方が結晶欠陥が著しく低いことを示
していた。When the depth at which the ion species were implanted into the product Si substrate was measured by TEM method, the former was about 150 Å and the latter was about 500 Å. It was also shown that the former Si substrate obtained by the method of the present invention had significantly lower crystal defects.
【００１１】[0011]
【発明の効果】この発明のＲＩＥ法エッチングによれば
、Ｓｉ基板へのイオン種の打込みが減少してイオンが打
込まれる深さが浅くなり、またＣ、Ｆなどの不純物のＳ
ｉ基板への導入が少なくなり、Ｓｉ基板の結晶欠陥が少
なくなる。Effects of the Invention According to the RIE etching of the present invention, the number of ion species implanted into the Si substrate is reduced, the depth to which the ions are implanted becomes shallow, and the S of impurities such as C and F is reduced.
The introduction into the i-substrate is reduced, and the number of crystal defects in the Si substrate is reduced.
【図１】半導体製造時のエッチング工程説明図である。FIG. 1 is an explanatory diagram of an etching process during semiconductor manufacturing.
１ Ｓｉ基板 ２ ＢＰＳＧ膜 ３ パターンレジスト層 ４ エッチングの方向 ５ コンタクトホール ６ 結晶欠陥部 1 Si substrate 2 BPSG film 3 Pattern resist layer 4 Etching direction 5 Contact hole 6 Crystal defect part
Claims (1)
ＳｉＯ２膜に対し、少なくとも３個の炭素原子を有する
フッ素化炭化水素を少なくとも１つ含有する反応ガスを
用いて反応性イオンエッチングを行うことからなる半導
体装置の製造方法。1. Performing reactive ion etching on a SiO2 film provided on a Si substrate of a semiconductor device using a reactive gas containing at least one fluorinated hydrocarbon having at least three carbon atoms. A method for manufacturing a semiconductor device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5501091A JPH04290429A (en) | 1991-03-19 | 1991-03-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5501091A JPH04290429A (en) | 1991-03-19 | 1991-03-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04290429A true JPH04290429A (en) | 1992-10-15 |
Family
ID=12986689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5501091A Pending JPH04290429A (en) | 1991-03-19 | 1991-03-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04290429A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10177992A (en) * | 1996-12-16 | 1998-06-30 | Sharp Corp | Taper etching method of micro contact hole |
| US8269931B2 (en) | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
| US8946864B2 (en) | 2011-03-16 | 2015-02-03 | The Aerospace Corporation | Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same |
| US9324579B2 (en) | 2013-03-14 | 2016-04-26 | The Aerospace Corporation | Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates |
-
1991
- 1991-03-19 JP JP5501091A patent/JPH04290429A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10177992A (en) * | 1996-12-16 | 1998-06-30 | Sharp Corp | Taper etching method of micro contact hole |
| US8269931B2 (en) | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
| US9048179B2 (en) | 2009-09-14 | 2015-06-02 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
| US8946864B2 (en) | 2011-03-16 | 2015-02-03 | The Aerospace Corporation | Systems and methods for preparing films comprising metal using sequential ion implantation, and films formed using same |
| US9324579B2 (en) | 2013-03-14 | 2016-04-26 | The Aerospace Corporation | Metal structures and methods of using same for transporting or gettering materials disposed within semiconductor substrates |
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