JPH04277444A - Structure of collector of microwave tube - Google Patents

Structure of collector of microwave tube

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Publication number
JPH04277444A
JPH04277444A JP3863991A JP3863991A JPH04277444A JP H04277444 A JPH04277444 A JP H04277444A JP 3863991 A JP3863991 A JP 3863991A JP 3863991 A JP3863991 A JP 3863991A JP H04277444 A JPH04277444 A JP H04277444A
Authority
JP
Japan
Prior art keywords
collector
electron beam
microwave tube
collector electrode
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3863991A
Other languages
Japanese (ja)
Inventor
Hideki Ide
秀樹 井手
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP3863991A priority Critical patent/JPH04277444A/en
Publication of JPH04277444A publication Critical patent/JPH04277444A/en
Pending legal-status Critical Current

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  • Microwave Tubes (AREA)

Abstract

PURPOSE:To eliminate risk of melting and vaporization of a metal of the surface where an electron beam runs against, equip the whole collector with an excellent heat emitting characteristic relieve thermal stresses on the way, lessen the risk of breakage, and construct the whole structure in light weight. CONSTITUTION:The collector structure of a microwave tube is configured so that collector electrodes 5-8 are formed from an inclining functional material in which the contents of W/Mo and Cu vary gradually, and also that the W or Mo is situated on the side which is bombarded with electron beam. Thus the intended purpose will be achieved.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】この発明は、進行波管、クライス
トロン等に使用して好適なマイクロ波管のコレクタ構体
に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a collector structure for a microwave tube suitable for use in traveling wave tubes, klystrons, and the like.

【0002】0002

【従来の技術】一般にマイクロ波管は、電子銃部の電子
ビーム下流に遅波回路のような高周波作用部、及びコレ
クタ構体が配置されている。例えば、人工衛星搭載用の
進行波管などには、電力利用効率を高めるために、コレ
クタ電位を低下させて動作させる多段型コレクタ構体が
採用される。
2. Description of the Related Art Generally, a microwave tube has a high frequency acting section such as a slow wave circuit and a collector structure arranged downstream of an electron beam of an electron gun section. For example, traveling wave tubes mounted on artificial satellites employ multistage collector structures that operate by lowering the collector potential in order to increase power usage efficiency.

【0003】この種のコレクタ構体は、複数のコレクタ
電極がセラミックスのようなリング状絶縁支持体により
電気的に絶縁して積み重ねられて固定されている。そし
て、これら複数のコレクタ電極および絶縁支持体は、包
囲部材であるコレクタ外囲器により覆われている。とこ
ろで従来、上記のコレクタ電極やコレクタ外囲器に採用
されていた材質は、次のような3つの場合がある。 (1) 各コレクタ電極がタングステン(W)又はモリ
ブデン(Mo)からなっている。 (2) 各コレクタ電極が銅(Cu)からなっている。 (3) コレクタ外囲器がステンレス、コバール(商品
名)からなっている。
In this type of collector structure, a plurality of collector electrodes are stacked and fixed while being electrically insulated by a ring-shaped insulating support such as ceramic. These collector electrodes and insulating supports are covered by a collector envelope, which is a surrounding member. By the way, there are three types of materials that have been conventionally used for the collector electrode and the collector envelope as described below. (1) Each collector electrode is made of tungsten (W) or molybdenum (Mo). (2) Each collector electrode is made of copper (Cu). (3) The collector envelope is made of stainless steel and Kovar (product name).

【0004】0004

【発明が解決しようとする課題】ところが上記の材質を
採用した場合、次のような不都合が生じる。上記(1)
 の場合は、熱伝導が悪く、熱伝導を良くするために材
料を厚くすると重くなる。
[Problems to be Solved by the Invention] However, when the above materials are used, the following problems occur. Above (1)
In this case, heat conduction is poor, and if the material is made thicker to improve heat conduction, it will become heavier.

【0005】上記(2) の場合は、機械強度が弱く、
機械強度を強くするために材料を厚くすると重くなる。 又、機械強度を強くすると、絶縁支持体のセラミックス
との熱膨脹差により、セラミックスの割れが発生する。 上記(3)の場合は、熱伝導が悪く、コレクタ電極とコ
レクタ外囲器の熱膨脹差が大きい。
In the case of (2) above, the mechanical strength is weak;
If you make the material thicker to increase its mechanical strength, it will become heavier. Furthermore, when the mechanical strength is increased, cracks occur in the ceramic due to the difference in thermal expansion between the insulating support and the ceramic. In the case of (3) above, heat conduction is poor and there is a large difference in thermal expansion between the collector electrode and the collector envelope.

【0006】この発明は、以上のような不都合を解決す
るものであり、放熱特性が優れ、熱応力が途中で緩和さ
れて破損の恐れが少なく、全体として軽量化が図れるマ
イクロ波管のコレクタ構体を提供することを目的とする
The present invention solves the above-mentioned disadvantages, and provides a collector structure for a microwave tube that has excellent heat dissipation characteristics, reduces the risk of breakage due to thermal stress being alleviated midway, and is lightweight as a whole. The purpose is to provide

【0007】[0007]

【課題を解決するための手段】この発明は、コレクタ電
極が、W又はMoと、Cuとが徐々に含有量変化する傾
斜機能材により構成され、且つW又はMoは電子ビーム
が当る側に位置してなるマイクロ波管のコレクタ構体で
ある。
[Means for Solving the Problems] In the present invention, the collector electrode is made of a functionally graded material in which the contents of W or Mo and Cu gradually change, and the W or Mo is located on the side that is hit by the electron beam. This is the collector structure of a microwave tube.

【0008】[0008]

【作用】この発明によれば、電子ビームが当る面の金属
が溶融・蒸発する恐れがなく、電子ビームが当るW又は
Mo面からCuの方へ熱の伝導性が良いので、コレクタ
全体の放熱特性が優れ、熱応力が途中で緩和されるので
破損の恐れが少なく、全体として軽量化が図れる。
[Operation] According to this invention, there is no fear that the metal on the surface that is hit by the electron beam will melt or evaporate, and the heat conductivity from the W or Mo surface that is hit by the electron beam to the Cu is good, so the heat is dissipated from the entire collector. It has excellent properties and reduces the risk of breakage because thermal stress is alleviated during the process, making it possible to reduce the overall weight.

【0009】[0009]

【実施例】以下、図面を参照して、この発明の一実施例
を詳細に説明する。図1に示す実施例は、ヘリックス型
進行波管にこの発明を適用したものであって、次のよう
に構成されている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings. The embodiment shown in FIG. 1 is an application of the present invention to a helical traveling wave tube, and is constructed as follows.

【0010】即ち、同図中の符号1は図示しない高周波
作用部につながる接続用端板であり、この接続用端板1
には高熱抵抗ベローズ2および薄肉支持筒3を介してコ
レクタ支持板4が設けられている。そして、漏斗状第1
、第2、第3、第4コレクタ電極5、6、7、8及び第
4コレクタ電極8の底部電極9が電子ビーム上流側から
下流側に所定間隔で配列され、それぞれセラミックスの
ようなリング状絶縁支持体10、11、12、13によ
り電気的に絶縁して積み重ねられ、コレクタ支持板4に
固定されている。各コレクタ電極と絶縁支持体は、ろう
付けされている。更に、これら複数のコレクタ電極5、
6、7、8および底部電極9と絶縁支持体10、11、
12、13は、コレクタ外囲器14、15により覆われ
、底部電極9は円板状絶縁支持体16を介してコレクタ
外囲器15に保持されている。
That is, the reference numeral 1 in the figure is a connecting end plate connected to a high frequency action section (not shown), and this connecting end plate 1
A collector support plate 4 is provided through a high heat resistance bellows 2 and a thin support cylinder 3. and the funnel-shaped first
, second, third, and fourth collector electrodes 5, 6, 7, and 8, and a bottom electrode 9 of the fourth collector electrode 8 are arranged at predetermined intervals from the upstream side to the downstream side of the electron beam, and are each made of a ring-shaped ceramic material. They are electrically insulated and stacked on top of each other by insulating supports 10, 11, 12, and 13, and are fixed to the collector support plate 4. Each collector electrode and the insulating support are brazed. Furthermore, these plurality of collector electrodes 5,
6, 7, 8 and a bottom electrode 9 and an insulating support 10, 11,
12 and 13 are covered by collector envelopes 14 and 15, and the bottom electrode 9 is held by the collector envelope 15 via a disc-shaped insulating support 16.

【0011】上記の場合、各コレクタ電極5、6、7、
8および底部電極9は、図1の円内に拡大して示したよ
うに、いずれもW(タングステン)又はMo(モリブデ
ン)とCu(銅)とが徐々に含有量変化する傾斜機能材
により構成され、且つW又はMoは電子ビームが当る側
に位置している。尚、便宜上、図1では第1コレクタ電
極5のみ円内に拡大して示したが、他のコレクタ電極6
、7、8および底部電極9についても全く同様であるの
は、言うまでもない。
In the above case, each collector electrode 5, 6, 7,
8 and the bottom electrode 9, as shown enlarged in the circle in FIG. 1, are both made of a functionally graded material in which the content of W (tungsten) or Mo (molybdenum) and Cu (copper) gradually changes. In addition, W or Mo is located on the side that is hit by the electron beam. For convenience, only the first collector electrode 5 is shown enlarged in a circle in FIG. 1, but the other collector electrodes 6
, 7, 8 and the bottom electrode 9, needless to say, the same is true.

【0012】ここで、傾斜機能材について説明すると、
一般にA,B2つの材料を接合すると、両者の長所を利
用出来るが、熱膨脹率の違いから曲がったり剥がれたり
し易いのが難点になっている。しかし、傾斜機能材は境
界面で材質をAからBに徐々に変化させ、上記の難点を
解消しようとするものである。尚、詳しくは例えば雑誌
「工業材料」第38巻第12号,第14号(平成2年1
0月,同11月発行)に紹介されているものである。こ
の実施例では、第1、第2、第3、第4コレクタ電極5
、6、7、8及び第4コレクタ電極8の底部電極9に上
記のような傾斜機能材を使用している。このような傾斜
機能材を採用した結果、従来技術と比較すると、この発
明では次のような優れた効果が得られる。従来技術で述
べた (1) に比べ、熱伝導を同等とした場合、この実施例
の方が軽量になる。 (2) に比べ、機械強度を同等とした場合、この実施
例の方が軽量になる。 (2) に比べ、機械強度を強くしても、熱膨脹差が小
さいので、セラミックスの割れが生じ難い。 (3) に比べ、この実施例の方が熱伝導が良い。 (3) に比べ、この実施例の方がコレクタ電極とコレ
クタ外囲器の熱膨脹差が小さい。 (他の実施例)次に、この発明の他の実施例について説
明するが、上記実施例と同様効果が得られる。
[0012] Here, the functionally graded material will be explained as follows.
Generally, when two materials A and B are joined together, the advantages of both materials can be utilized, but the disadvantage is that they are prone to bending and peeling due to the difference in coefficient of thermal expansion. However, functionally graded materials gradually change the quality of the material from A to B at the interface to solve the above-mentioned problems. For details, please refer to the magazine "Industrial Materials" Vol. 38, No. 12, No. 14 (January 1990).
Published in October and November of the same year). In this embodiment, the first, second, third, and fourth collector electrodes 5
, 6, 7, 8, and the bottom electrode 9 of the fourth collector electrode 8, the functionally graded material described above is used. As a result of employing such a functionally graded material, the present invention provides the following excellent effects when compared with the prior art. Compared to (1) described in the prior art, this embodiment is lighter when heat conduction is the same. Compared to (2), this embodiment is lighter when the mechanical strength is the same. Compared to (2), even if the mechanical strength is increased, the difference in thermal expansion is small, so cracking of the ceramic is less likely to occur. Compared to (3), this example has better heat conduction. Compared to (3), this embodiment has a smaller difference in thermal expansion between the collector electrode and the collector envelope. (Other Embodiments) Next, other embodiments of the present invention will be described, and the same effects as those of the above embodiments can be obtained.

【0013】先ず、図2の実施例について述べると、こ
の図2のコレクタ構体においては、漏斗状第1、第2、
第3、第4コレクタ電極17、18、19、20および
底部電極21の周縁部がそれぞれリング状絶縁支持体2
2、23、24、25および円板状絶縁支持体26を介
してろう付けによりコレクタ外囲器27、28に固定さ
れている。そして、上記実施例と全く同様に各コレクタ
電極17、18、19、20および底部電極21は傾斜
機能材により構成されている。更に、この実施例では包
囲部材であるコレクタ外囲器27、28がそれぞれ円内
に拡大して示したように、いずれもW又はMoとCuと
が徐々に含有量変化する傾斜機能材により構成され、且
つW又はMoは電子ビームが当る側に位置している。 尚、便宜上、図2ではコレクタ外囲器27のみ円内に拡
大して示したが、コレクタ外囲器28についても全く同
様であるのは、言うまでもない。
First, referring to the embodiment shown in FIG. 2, in the collector structure shown in FIG.
The peripheral edges of the third and fourth collector electrodes 17, 18, 19, 20 and the bottom electrode 21 are respectively connected to the ring-shaped insulating support 2.
2, 23, 24, 25 and a disc-shaped insulating support 26, and are fixed to the collector envelopes 27, 28 by brazing. And, just like the above embodiment, each collector electrode 17, 18, 19, 20 and the bottom electrode 21 are made of a functionally graded material. Furthermore, in this embodiment, the collector envelopes 27 and 28, which are enclosing members, are each made of a functionally graded material in which the contents of W or Mo and Cu gradually change, as shown in the enlarged circles. In addition, W or Mo is located on the side that is hit by the electron beam. For convenience, only the collector envelope 27 is shown enlarged in a circle in FIG. 2, but it goes without saying that the same is true for the collector envelope 28 as well.

【0014】次に、図3(a)、(b)の実施例につい
て述べると、この図3(a)、(b)のコレクタ構体は
多段型ではなく、略円筒状のコレクタ電極29の外周に
絶縁体30、31、32、33を介して円筒状のコレク
タ外囲器34が設けられている。この場合、コレクタ外
囲器34は円内に拡大して示すようにW又はMoとCu
とが徐々に含有量変化する傾斜機能材により構成され、
且つW又はMoは電子ビームが当る側に位置している。 従って、動作中にコレクタ電極29の温度が上がると、
コレクタ電極29とコレクタ外囲器34との熱膨脹差に
より、コレクタ電極29、絶縁体30、31、32、3
3、コレクタ外囲器34の接触性が良くなり、熱伝導が
向上する。
Next, referring to the embodiments shown in FIGS. 3(a) and 3(b), the collector structure shown in FIGS. A cylindrical collector envelope 34 is provided through insulators 30, 31, 32, and 33. In this case, the collector envelope 34 is made of W or Mo and Cu as shown enlarged in the circle.
It is composed of a functionally graded material whose content gradually changes.
In addition, W or Mo is located on the side that is hit by the electron beam. Therefore, if the temperature of the collector electrode 29 rises during operation,
Due to the difference in thermal expansion between the collector electrode 29 and the collector envelope 34, the collector electrode 29, the insulators 30, 31, 32, 3
3. The contact of the collector envelope 34 is improved, and heat conduction is improved.

【0015】次に、図4の実施例について述べると、こ
の図4のコレクタ構体も多段型ではなく、略円筒状のコ
レクタ電極35の外周に円筒状の絶縁体36を介して複
数の板状ラジエータ37が突設されている。この場合、
コレクタ電極35はW又はMoとCuとが徐々に含有量
変化する傾斜機能材により構成され、且つW又はMoは
電子ビームが当る側に位置している。尚、ラジエータ3
7はCu製である。
Next, regarding the embodiment shown in FIG. 4, the collector structure shown in FIG. A radiator 37 is provided protrudingly. in this case,
The collector electrode 35 is made of a functionally graded material in which the contents of W or Mo and Cu gradually change, and W or Mo is located on the side that is hit by the electron beam. Furthermore, radiator 3
7 is made of Cu.

【0016】最後に、図5の実施例について述べると、
この図5のコレクタ構体も多段型ではなく、略円筒状の
コレクタ電極38は外周に円筒状のセラミックス製絶縁
体39を介して逆U字状の締め付け部材40が設けられ
、この締め付け部材40とねじ41によりベースプレー
ト42に固定されている。この場合、図4の実施例と同
様にコレクタ電極38はW又はMoとCuとが徐々に含
有量変化する傾斜機能材により構成され、且つW又はM
oは電子ビームが当る側に位置している。更に、締め付
け部材40も円内に拡大して示すようにW又はMoとC
uとが徐々に含有量変化する傾斜機能材により構成され
ているが、コレクタ電極38とは逆に内側にCuが位置
し外側にW又はMoが位置している。従って、動作中に
コレクタ電極38の温度が上がると、コレクタ電極38
と絶縁体39との熱膨脹差により両者の接触性が良くな
り、絶縁体39の破損が起こり難い。図中の符号43は
伝熱部材である。尚、上記各実施例におけるコレクタ電
極は、必要に応じ、その表面の全部又は一部に炭素、炭
化チタン、窒化チタン等の被膜を形成しても良い。
Finally, referring to the embodiment shown in FIG.
The collector structure in FIG. 5 is also not a multi-stage type, and an inverted U-shaped tightening member 40 is provided on the outer periphery of the collector electrode 38 with a cylindrical ceramic insulator 39 interposed therebetween. It is fixed to a base plate 42 with screws 41. In this case, as in the embodiment shown in FIG.
o is located on the side that is hit by the electron beam. Furthermore, the tightening member 40 is also made of W or Mo and C as shown enlarged in the circle.
It is made of a functionally graded material whose content gradually changes, but contrary to the collector electrode 38, Cu is located on the inside and W or Mo is located on the outside. Therefore, if the temperature of the collector electrode 38 rises during operation, the collector electrode 38
The difference in thermal expansion between the insulator 39 and the insulator 39 improves the contact between the two, making it difficult for the insulator 39 to be damaged. Reference numeral 43 in the figure represents a heat transfer member. Note that the collector electrode in each of the above embodiments may be coated with carbon, titanium carbide, titanium nitride, or the like on all or part of its surface, if necessary.

【0017】[0017]

【発明の効果】この発明によれば、コレクタ電極は、W
又はMoと、Cuとが徐々に含有量変化する傾斜機能材
により構成され、且つW又はMoは電子ビームが当る側
に位置しているので、電子ビームが当る面の金属が溶融
・蒸発する恐れがない。又、電子ビームが当るW又はM
oからCuの方へ熱の伝導性が良いので、コレクタ全体
の放熱特性が優れている。更に、熱応力が途中で緩和さ
れるので、破損の恐れが少ない。そして、コレクタ構体
全体として軽量化が図れる。
[Effects of the Invention] According to the present invention, the collector electrode includes W
Or, since it is composed of a functionally graded material in which the contents of Mo and Cu gradually change, and W or Mo is located on the side that is hit by the electron beam, there is a risk that the metal on the side that is hit by the electron beam will melt or evaporate. There is no. Also, W or M where the electron beam hits
Since heat conductivity is good from o to Cu, the heat dissipation characteristics of the entire collector are excellent. Furthermore, since the thermal stress is relieved during the process, there is less risk of breakage. Moreover, the weight of the entire collector structure can be reduced.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】この発明の一実施例に係るマイクロ波管のコレ
クタ構体を示す縦断面図。
FIG. 1 is a longitudinal sectional view showing a collector structure of a microwave tube according to an embodiment of the present invention.

【図2】この発明の第1の他の実施例に係るマイクロ波
管のコレクタ構体を示す縦断面図。
FIG. 2 is a longitudinal sectional view showing a collector structure of a microwave tube according to a first other embodiment of the present invention.

【図3】(a)、(b)はこの発明の第2の他の実施例
に係るマイクロ波管のコレクタ構体を示す縦断面図と横
断面図であり、(b)は(a)のA−A′線に沿って切
断し矢印方向に見たもの。
FIGS. 3(a) and 3(b) are a vertical cross-sectional view and a cross-sectional view showing a collector structure of a microwave tube according to a second other embodiment of the present invention, and FIG. Cut along line A-A' and viewed in the direction of the arrow.

【図4】この発明の第3の他の実施例に係るマイクロ波
管のコレクタ構体を示す横断面図。
FIG. 4 is a cross-sectional view showing a collector structure of a microwave tube according to a third other embodiment of the present invention.

【図5】この発明の第4の他の実施例に係るマイクロ波
管のコレクタ構体を示す横断面図。
FIG. 5 is a cross-sectional view showing a collector structure of a microwave tube according to a fourth alternative embodiment of the present invention.

【符号の説明】[Explanation of symbols]

5〜8…コレクタ電極、10〜13…絶縁支持体、14
、15…コレクタ外囲器。
5-8... Collector electrode, 10-13... Insulating support, 14
, 15... Collector envelope.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】  高周波作用部の電子ビーム下流に配置
されたコレクタ電極を有するマイクロ波管のコレクタ構
体において、上記コレクタ電極は、W又はMoと、Cu
とが徐々に含有量変化する傾斜機能材により構成され、
且つ上記W又はMoは上記電子ビームが当る側に位置す
ることを特徴とするマイクロ波管のコレクタ構体。
1. A collector structure of a microwave tube having a collector electrode disposed downstream of an electron beam of a high frequency working part, wherein the collector electrode is made of W or Mo and Cu.
It is composed of a functionally graded material whose content gradually changes.
A collector structure for a microwave tube, wherein the W or Mo is located on a side that is hit by the electron beam.
JP3863991A 1991-03-05 1991-03-05 Structure of collector of microwave tube Pending JPH04277444A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3863991A JPH04277444A (en) 1991-03-05 1991-03-05 Structure of collector of microwave tube

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3863991A JPH04277444A (en) 1991-03-05 1991-03-05 Structure of collector of microwave tube

Publications (1)

Publication Number Publication Date
JPH04277444A true JPH04277444A (en) 1992-10-02

Family

ID=12530814

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3863991A Pending JPH04277444A (en) 1991-03-05 1991-03-05 Structure of collector of microwave tube

Country Status (1)

Country Link
JP (1) JPH04277444A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845657A (en) * 1994-07-12 1996-02-16 Samsung Electron Co Ltd Electronic range

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0845657A (en) * 1994-07-12 1996-02-16 Samsung Electron Co Ltd Electronic range

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