JPH04276078A - Chemical vapor growth method - Google Patents

Abstract

PURPOSE:To easily synthesize a transparent conductive thin film by using the indium substitution product of beta-diketone as the raw material for indium oxide and the tin substitution product of beta-diketone as a tin dopant and adding a gaseous reactant to the gaseous raw material. CONSTITUTION:The indium substitution product of beta-diketone is used as the raw material for indium oxide and the tin substitution product of beta-diketone as a tin dopant, and a gaseous reactant is added to the gaseous raw material to grow an indium oxide film doped with tin on the surface of a material to be treated. A bis-acetylacetonato tin to its derivative is used as the tin substitution product of beta-diketone and oxygen or air as the gaseous reactant. A carrier gas cylinder 1, a gaseous reactant cylinder 2, a vaporizer 5, a tin material 6, an indium material 7, a reactor 8, etc., are used to form a film on a material 10. A high-performance transparent conductive film is easily grown in this way.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method, and more particularly to a method for manufacturing a tin-doped indium oxide film useful as a transparent conductive film.

0002

[Prior art] Chemical vapor deposition (Chemical V
The apor deposition (CVD) method has been widely put into practical use as a method for mass-producing high-performance films. As a chemical vapor deposition method of indium oxide film, Ryabova et al., Thin Solid Films 92 (19
82) reported in 327-332. According to Ryabova et al., indium acetylacetonate is suitable as a raw material for synthesizing indium oxide films.

0003

[Problems to be Solved by the Invention] However, it was not possible to reduce the resistance of the film by adding only a small amount of tin during thin film synthesis, and Ryabova et al. By doing this, we aim to lower the resistance. The present invention has been made in view of the above-mentioned difficulties, and its purpose is to easily synthesize a transparent conductive thin film exhibiting high transparent conductivity without annealing and only by doping during thin film synthesis. The objective is to provide a new chemical vapor deposition method for obtaining

0004

[Means for Solving the Problems] A β diketone of indium is used as a raw material for indium oxide, a β diketone of tin, for example, a β diketone of tin is used as a tin bisacetylacetonate or a tin bisacetylacetonate as a doping agent for tin; A chemical vapor deposition method characterized in that a tin-doped indium oxide film is grown on the surface of a workpiece by adding, for example, oxygen or air to a source gas as a reactive gas.

[0005]

[Operation] When the method of the present invention is used, a high-performance transparent conductive film superior to that obtained by annealing can be easily grown using raw materials that are safe to handle and in a small number of steps.

[Examples] Examples of the present invention will be described below. FIG. 1 shows a schematic diagram of the film forming apparatus. Indium acetylacetonate was used as a raw material and was vaporized in a vaporizer maintained at 180 to 190°C. Tin bisacetylacetonate was used as the tin source. This was vaporized in a vaporization chamber maintained at 80° C. inside the vaporizer, and introduced into the vaporizer using nitrogen gas as a carrier gas. Oxygen gas (
This was introduced into the vaporizer using a flow rate of 200 cm3/min). Total carrier flow rate constant (750cm3/min
) by changing the carrier flow rate and temperature of the tin source, the tin doping amount can be varied widely (Sn/In=0~0
．． 4) Changed. Borosilicate glass and silicon single crystal were used as the substrate. When the reaction was carried out at a reaction temperature of 350 to 500°C, a tin-doped In2O3 thin film was obtained. FIG. 2 shows an example of the X-ray diffraction pattern of the synthesized thin film. FIG. 3 shows the light transmittance of the synthesized thin film with a thickness of 215 nm versus the wavelength of light. The visible light transmittance of the film is 80
% or more. The resistivity of this film is 1.8×10-4Ω
・It was cm. FIG. 4 shows the resistivity, carrier concentration, and mobility of the synthesized thin film with respect to the atomic ratio Sn/In of the film. Although the present invention has been variously explained above with reference to preferred embodiments, the present invention is not limited to these embodiments, and it goes without saying that many modifications can be made without departing from the spirit of the invention. It is.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram of the device.

FIG. 2 is a diagram showing an example of an X-ray diffraction pattern of a synthesized thin film.

FIG. 3 is a diagram showing the light transmittance of a synthesized thin film versus the wavelength of light.

FIG. 4 is a diagram showing the resistivity, carrier concentration, and mobility of a synthesized thin film with respect to the atomic ratio Sn/In of the film.

[Explanation of symbols]

1 Carrier gas cylinder 2 Reaction gas cylinder 3 Gas flow controller 4 Temperature detector 5. Vaporizer 6. Tin raw material 7 Indium raw material 8 Reactor 9 Heater 10 Object to be treated

Claims (3)

[Claims] Claim 1: By using β-diketone of indium as a raw material for indium oxide, β-diketone of tin as a doping agent for tin, and adding a reactive gas to the raw material gas, an indium oxide film doped with tin is formed on the surface of a workpiece. A chemical vapor deposition method characterized by growing. 2. The chemical vapor deposition method according to claim 1, wherein the β diketone of tin is tin bisacetylacetonate or a derivative of tin bisacetylacetonate. 3. The chemical vapor deposition method according to claim 1, wherein the reactive gas is oxygen or air.