JPH04275459A - Solid-state image pickup device and for manufacture thereof - Google Patents
Solid-state image pickup device and for manufacture thereofInfo
- Publication number
- JPH04275459A JPH04275459A JP3037171A JP3717191A JPH04275459A JP H04275459 A JPH04275459 A JP H04275459A JP 3037171 A JP3037171 A JP 3037171A JP 3717191 A JP3717191 A JP 3717191A JP H04275459 A JPH04275459 A JP H04275459A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- microlens
- fluorine
- film
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000011347 resin Substances 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims abstract description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 7
- 125000001153 fluoro group Chemical group F* 0.000 claims abstract description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 13
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 12
- 239000011737 fluorine Substances 0.000 claims description 12
- 238000003384 imaging method Methods 0.000 claims description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 3
- 150000002576 ketones Chemical class 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 abstract description 3
- 239000004925 Acrylic resin Substances 0.000 abstract description 3
- 229920001225 polyester resin Polymers 0.000 abstract description 3
- 239000004645 polyester resin Substances 0.000 abstract description 3
- 239000003822 epoxy resin Substances 0.000 abstract description 2
- 229920000647 polyepoxide Polymers 0.000 abstract description 2
- 230000003667 anti-reflective effect Effects 0.000 abstract 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 abstract 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010030 laminating Methods 0.000 abstract 1
- RCHKEJKUUXXBSM-UHFFFAOYSA-N n-benzyl-2-(3-formylindol-1-yl)acetamide Chemical compound C12=CC=CC=C2C(C=O)=CN1CC(=O)NCC1=CC=CC=C1 RCHKEJKUUXXBSM-UHFFFAOYSA-N 0.000 abstract 1
- 239000010408 film Substances 0.000 description 35
- 230000035945 sensitivity Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000113 methacrylic resin Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
Landscapes
- Surface Treatment Of Optical Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、各受光部上にそれぞれ
マイクロレンズを有する固体撮像素子及びその製造方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid-state image pickup device having microlenses on each light-receiving section, and a method for manufacturing the same.
【0002】0002
【従来の技術】従来のマイクロレンズを有するCCD固
体撮像素子の構成を図3に示す。1はマイクロレンズ,
2はホトダイオード,3はシリコン基板,4は垂直CC
D部,5はポリシリコン電極,7はシリコン酸化膜,8
は平坦化膜,10は空気又は不活性ガス層を示す。2. Description of the Related Art FIG. 3 shows the structure of a conventional CCD solid-state image sensor having a microlens. 1 is a microlens,
2 is a photodiode, 3 is a silicon substrate, 4 is a vertical CC
D section, 5 is a polysilicon electrode, 7 is a silicon oxide film, 8
1 is a flattening film, and 10 is an air or inert gas layer.
【0003】マイクロレンズ1は、ホトダイオード2に
入射する光の量を増し、感度を上げる目的で形成される
。このマイクロレンズ1を構成する材料は透明樹脂であ
り、アクリル樹脂やポリスチレン等が使われている。
該透明樹脂の表面の反射率は5〜10%程度である。し
かし、このマイクロレンズ表面に光の反射防止膜は、形
成されていない。The microlens 1 is formed for the purpose of increasing the amount of light incident on the photodiode 2 and increasing the sensitivity. The material constituting this microlens 1 is a transparent resin, such as acrylic resin or polystyrene. The reflectance of the surface of the transparent resin is about 5 to 10%. However, no antireflection film is formed on the surface of this microlens.
【0004】0004
【発明が解決しようとする課題】CCD固体撮像素子は
、近年感度の向上が著しく、人間の目よりも優れたもの
が製造されるようになった。そして、マイクロレンズの
表面に光の反射防止膜を形成する技術が確立できれば、
さらに感度を向上させ、夜間等の安全面への用途が拡大
する。[Problems to be Solved by the Invention] In recent years, the sensitivity of CCD solid-state imaging devices has improved significantly, and devices that are superior to the human eye are now being manufactured. If we can establish a technology to form an anti-reflection film on the surface of microlenses,
Furthermore, the sensitivity will be improved, expanding its use for safety purposes such as at night.
【0005】しかし、厚さ0.1〜0.2μm程度の膜
を、図3に示す様な縦横幅5μm〜10μm,厚さ2μ
m〜4μm程度の微細な凸レンズの表面に形成する技術
は、従来全くなかった。例えば、半導体素子の表面に高
分子樹脂の膜を形成するのに、一般に用いられるスピン
コート法を用いるとマイクロレンズの凸部の為に塗布ム
ラを生じる。However, a film with a thickness of about 0.1 to 0.2 μm can be formed into a film with a vertical and horizontal width of 5 μm to 10 μm and a thickness of 2 μm as shown in FIG.
Conventionally, there has been no technology for forming microscopic convex lenses on the surface of microscopic convex lenses with a diameter of about m to 4 μm. For example, when a commonly used spin coating method is used to form a polymer resin film on the surface of a semiconductor element, uneven coating occurs due to the convex portions of microlenses.
【0006】本発明は、マイクロレンズ表面に均一の厚
さの反射防止膜を有する固体撮像素子及びその製造方法
を提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a solid-state imaging device having an antireflection film of uniform thickness on the surface of a microlens, and a method for manufacturing the same.
【0007】[0007]
【課題を解決するための手段】請求項1記載の本発明で
ある固体撮像素子は、マイクロレンズ表面に厚さが均一
な反射防止膜を有することを特徴とする。[Means for Solving the Problems] A solid-state imaging device according to the present invention as set forth in claim 1 is characterized in that an antireflection film having a uniform thickness is provided on the surface of a microlens.
【0008】また、請求項2記載の本発明である固体撮
像素子の製造方法は、フッ素を含むエポキシ樹脂又はポ
リエステル樹脂又はメタクリル樹脂又はフェノール樹脂
を溶した、エーテル分子又はケトン分子中に含まれる水
素原子をフッ素原子に置換した溶媒の単分子膜をマイク
ロレンズ表面に積層し、反射防止膜を形成することを特
徴とする。[0008] Furthermore, the method for manufacturing a solid-state image sensing device according to the present invention as set forth in claim 2 provides a method for manufacturing a solid-state imaging device using hydrogen contained in an ether molecule or a ketone molecule in which a fluorine-containing epoxy resin, polyester resin, methacrylic resin, or phenol resin is dissolved. The method is characterized in that a monomolecular film of a solvent in which atoms are replaced with fluorine atoms is laminated on the surface of a microlens to form an antireflection film.
【0009】[0009]
【作用】上記請求項1記載の本発明を用いることによっ
て、マイクロレンズに入射する光に対する反射率を低減
することができる。[Operation] By using the present invention as set forth in claim 1 above, it is possible to reduce the reflectance of light incident on the microlens.
【0010】また、上記請求項2記載の本発明を用いる
ことによって、所望の厚さの反射防止膜を均一の厚さで
マイクロレンズの表面に形成することができる。Furthermore, by using the present invention as set forth in claim 2 above, it is possible to form an antireflection film of a desired thickness and a uniform thickness on the surface of a microlens.
【0011】[0011]
【実施例】以下、実施例に基づいて、本発明を詳細に説
明する。EXAMPLES The present invention will be explained in detail below based on examples.
【0012】図1に請求項1記載の本発明の固体撮像素
子の構成図を示す。1はマイクロレンズ,2はホトダイ
オード,3はシリコン基板,4は垂直CCD部,5はポ
リシリコン電極,6は反射防止膜,7はシリコン酸化膜
,8は平坦化膜,10は空気又は不活性ガス層である。
図1に示す様に、請求項1記載の本発明の固体撮像素子
のマイクロレンズ1は、表面上に反射防止膜6が厚さが
均一で形成されている。この反射防止膜6の材料には、
フッ素を含むアクリル樹脂又はポリエステル樹脂又はメ
タクリル樹脂又はフェノール樹脂(以下「フッ素含有樹
脂」という)が用いられている。FIG. 1 shows a configuration diagram of a solid-state imaging device according to the present invention. 1 is a microlens, 2 is a photodiode, 3 is a silicon substrate, 4 is a vertical CCD section, 5 is a polysilicon electrode, 6 is an antireflection film, 7 is a silicon oxide film, 8 is a flattening film, 10 is air or inert It is a gas layer. As shown in FIG. 1, the microlens 1 of the solid-state imaging device of the present invention has an antireflection film 6 formed on the surface thereof with a uniform thickness. The material of this anti-reflection film 6 includes:
Acrylic resin, polyester resin, methacrylic resin, or phenol resin containing fluorine (hereinafter referred to as "fluorine-containing resin") is used.
【0013】次に、請求項2記載の製造方法について述
べる。まず、所定の溶媒にフッ素含有樹脂を溶解する。
溶媒として用いることのできるものは、エーテル又はケ
トンに於ける水素原子をフッ素原子で置換したものであ
る。フッ素含有樹脂の比率は10%以下、望ましくは5
%以下である。10%を超えると前記フッ素樹脂の粘度
が高くなり、単分子膜及び薄膜の形成が困難になるため
である。Next, the manufacturing method according to claim 2 will be described. First, a fluorine-containing resin is dissolved in a predetermined solvent. What can be used as a solvent is an ether or a ketone in which the hydrogen atom is replaced with a fluorine atom. The ratio of fluorine-containing resin is 10% or less, preferably 5%.
% or less. This is because if it exceeds 10%, the viscosity of the fluororesin increases, making it difficult to form a monomolecular film and a thin film.
【0014】次にラングミュア・ブロジェット法(以下
「LB法」という)又は水面キャスト法を用いて、マイ
クロレンズ1の表面に上記フッ素樹脂の単分子膜9を積
層させ、反射防止膜6を形成する。図2にLB法の原理
を示す。Next, using the Langmuir-Blodgett method (hereinafter referred to as the "LB method") or the water surface casting method, the monomolecular film 9 of the fluororesin described above is laminated on the surface of the microlens 1 to form an antireflection film 6. do. Figure 2 shows the principle of the LB method.
【0015】本発明に於いて、LB法は、主に分子数の
小さな揮発性の高い溶媒を用いる場合に行われる。LB
法を行う場合は、水面上に上記フッ素含有樹脂溶液を滴
下する。滴下後、揮発性の高い溶液は、大部分が蒸発し
、フッ素含有樹脂が残る。水面上の単分子膜に表面圧を
十分にかけ、固体膜9の状態を保つ(図2(a))。
次に、図2(b)〜(d)に示す様に、該単分子膜9を
横切る方向にウェハー又はチップを上下させる。所望の
膜厚が得られるまで単分子膜をマイクロレンズ1の表面
に累積させる。その後、必要に応じてベーキングし単分
子膜積層膜の溶媒分子を除去してマイクロレンズ1との
密着性を上げる。これにより、フッ素含有樹脂から成る
均一な厚さの反射防止膜が形成される。In the present invention, the LB method is mainly carried out when using a highly volatile solvent with a small number of molecules. LB
When performing this method, the above fluorine-containing resin solution is dropped onto the water surface. After dropping, most of the highly volatile solution evaporates, leaving behind the fluorine-containing resin. Sufficient surface pressure is applied to the monomolecular film on the water surface to maintain the state of the solid film 9 (FIG. 2(a)). Next, as shown in FIGS. 2(b) to 2(d), the wafer or chip is moved up and down in a direction across the monomolecular film 9. A monomolecular film is accumulated on the surface of the microlens 1 until a desired film thickness is obtained. Thereafter, if necessary, baking is performed to remove solvent molecules from the monomolecular film laminate to improve adhesion to the microlens 1. As a result, an antireflection film made of a fluorine-containing resin and having a uniform thickness is formed.
【0016】次に、水面キャスト法を行う場合は、フッ
素樹脂溶液を水面上にスポイト等で数滴滴下することに
より展開すれば、厚さ数100Åの薄膜が得られる。次
に必要とあらば酸素雰囲気中で放電することにより、マ
イクロレンズ1表面を酸化し、親水性にして、吸着性を
高める。その後、LB法と同様に、ウェハー又はチップ
を上下させることによってマイクロレンズ1の表面に単
分子膜を積層させるか、あるいはウェハー又はチップを
水平に保ちながら水面にできるだけ近づけたのち、わず
かに傾けて一端から薄膜に接触させ、単分子膜をマイク
ロレンズ1上に付着させる。その後LB法と同様にベー
キングし、マイクロレンズ1との密着性を上げる。Next, when performing a water surface casting method, a thin film with a thickness of several 100 Å can be obtained by dropping several drops of the fluororesin solution onto the water surface using a dropper or the like. Next, if necessary, by discharging in an oxygen atmosphere, the surface of the microlens 1 is oxidized to make it hydrophilic and increase adsorption. After that, similarly to the LB method, the monomolecular film can be laminated on the surface of the microlens 1 by moving the wafer or chip up and down, or the wafer or chip can be held horizontally and brought as close to the water surface as possible, and then tilted slightly. The monomolecular film is attached onto the microlens 1 by contacting the thin film from one end. Thereafter, baking is performed in the same manner as in the LB method to improve adhesion to the microlens 1.
【0017】以上の様にして、形成された反射防止膜の
厚さの適用範囲は、マイクロレンズの屈折率やフッ素含
有樹脂の屈折率、マイクロレンズの厚さ、さらに入射光
の波長等により変わってくるが、0.05〜0.5μm
程度となる。The applicable range of the thickness of the antireflection film formed as described above varies depending on the refractive index of the microlens, the refractive index of the fluorine-containing resin, the thickness of the microlens, and the wavelength of the incident light. Although it comes, it is 0.05 to 0.5 μm.
It will be about.
【0018】本発明は、固体撮像素子に於けるマイクロ
レンズに反射防止膜を設けることを特徴とするが、他に
、液晶表示装置(LCD)に於いても実施可能である。The present invention is characterized in that an antireflection film is provided on the microlens in a solid-state image sensor, but it can also be implemented in a liquid crystal display (LCD).
【0019】[0019]
【発明の効果】以上、詳細に説明した様に、請求項1記
載の本発明の固体撮像素子を用いることにより、該固体
撮像素子の感度は、例えば、F4で1000LXの条件
で、約5〜10%向上する。尚、表面反射率は、従来の
固体撮像素子に於いては、5〜10%であるのに対し、
本発明の固体撮像素子では、1〜5%程度に減少した。
また、請求項2記載の固体撮像素子の製造方法を用いる
ことにより、マイクロレンズ表面上にムラなく厚さ均一
に、所望の反射防止膜を形成することができる。As described above in detail, by using the solid-state image sensor of the present invention as set forth in claim 1, the sensitivity of the solid-state image sensor can be increased from about 5 to Improve by 10%. Incidentally, the surface reflectance is 5 to 10% in conventional solid-state image sensors, whereas
In the solid-state image sensor of the present invention, the reduction was about 1 to 5%. Furthermore, by using the method for manufacturing a solid-state image sensor according to the second aspect, it is possible to form a desired antireflection film evenly and with a uniform thickness on the surface of the microlens.
【図1】本発明の固体撮像素子の構造断面図である。FIG. 1 is a cross-sectional view of the structure of a solid-state image sensor according to the present invention.
【図2】LB法の原理を示す図である。FIG. 2 is a diagram showing the principle of the LB method.
【図3】従来の固体撮像素子の構造断面図である。FIG. 3 is a structural cross-sectional view of a conventional solid-state image sensor.
1 マイクロレンズ 2 ホトダイオード 3 シリコン基板 4 垂直CCD部 5 ポリシリコン電極 6 反射防止膜 7 シリコン酸化膜 8 平坦化膜 9 単分子膜 10 空気又は不活性ガス層 1 Micro lens 2 Photodiode 3 Silicon substrate 4 Vertical CCD section 5 Polysilicon electrode 6. Anti-reflection film 7 Silicon oxide film 8 Planarization film 9 Monolayer 10 Air or inert gas layer
Claims (2)
を有する固体撮像素子に於いて、上記マイクロレンズ上
に、所定の厚さのフッ素含有樹脂膜から成る反射防止膜
を形成したことを特徴とする固体撮像素子。Claim 1: A solid-state imaging device having microlenses on each light receiving part, characterized in that an antireflection film made of a fluorine-containing resin film of a predetermined thickness is formed on the microlenses. Solid-state image sensor.
を有する固体撮像素子に於いて、エーテル又はケトンに
於ける水素原子をフッ素原子で置換した溶媒にフッ素含
有樹脂を溶解させた溶液の単分子膜をLB法又は水面キ
ャスト法により、マイクロレンズ上に積層し、上記マイ
クロレンズ上に所定の厚さのフッ素含有樹脂膜からなる
反射防止膜を形成することを特徴とする請求項1記載の
固体撮像素子の製造方法。Claim 2: A monomolecular film of a solution in which a fluorine-containing resin is dissolved in a solvent in which hydrogen atoms in ether or ketone are replaced with fluorine atoms in a solid-state imaging device having microlenses on each light receiving part. 2. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is laminated on a microlens by an LB method or a water surface casting method, and an antireflection film made of a fluorine-containing resin film having a predetermined thickness is formed on the microlens. Method of manufacturing elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037171A JP2719238B2 (en) | 1991-03-04 | 1991-03-04 | Solid-state imaging device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3037171A JP2719238B2 (en) | 1991-03-04 | 1991-03-04 | Solid-state imaging device and method of manufacturing the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04275459A true JPH04275459A (en) | 1992-10-01 |
JP2719238B2 JP2719238B2 (en) | 1998-02-25 |
Family
ID=12490152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3037171A Expired - Fee Related JP2719238B2 (en) | 1991-03-04 | 1991-03-04 | Solid-state imaging device and method of manufacturing the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2719238B2 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6583438B1 (en) * | 1999-04-12 | 2003-06-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
US6950140B2 (en) * | 2000-01-26 | 2005-09-27 | Toppan Printing Co., Ltd. | Solid image-pickup device having a micro lens array and method of manufacturing the same |
US7619678B2 (en) | 2005-11-18 | 2009-11-17 | Panasonic Corporation | Solid state imaging device and method for manufacturing the same |
JP2011003670A (en) * | 2009-06-17 | 2011-01-06 | Sony Corp | Method of manufacturing solid-state imaging element and solid-state imaging element |
US7932948B2 (en) | 2005-07-20 | 2011-04-26 | Panasonic Corporation | Solid-state image sensing device having a layer on microlens and method for fabricating the same |
US8093672B2 (en) | 2005-10-28 | 2012-01-10 | Panasonic Corporation | Solid-state imaging device |
JP2012078831A (en) * | 2011-09-29 | 2012-04-19 | Oji Paper Co Ltd | Manufacturing method of single-particle film on non-planar surface, manufacturing method of microstructure using single-particle film etching mask, and microstructure acquired by manufacturing method |
WO2013099945A1 (en) * | 2011-12-28 | 2013-07-04 | 富士フイルム株式会社 | Optical member set and solid-state image pickup element using same |
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JP2009043772A (en) | 2007-08-06 | 2009-02-26 | Panasonic Corp | Solid-state imaging apparatus, and manufacturing method thereof |
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1991
- 1991-03-04 JP JP3037171A patent/JP2719238B2/en not_active Expired - Fee Related
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US6831311B2 (en) | 1999-04-12 | 2004-12-14 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device |
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US7932948B2 (en) | 2005-07-20 | 2011-04-26 | Panasonic Corporation | Solid-state image sensing device having a layer on microlens and method for fabricating the same |
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US8093672B2 (en) | 2005-10-28 | 2012-01-10 | Panasonic Corporation | Solid-state imaging device |
US7619678B2 (en) | 2005-11-18 | 2009-11-17 | Panasonic Corporation | Solid state imaging device and method for manufacturing the same |
JP2011003670A (en) * | 2009-06-17 | 2011-01-06 | Sony Corp | Method of manufacturing solid-state imaging element and solid-state imaging element |
JP2012078831A (en) * | 2011-09-29 | 2012-04-19 | Oji Paper Co Ltd | Manufacturing method of single-particle film on non-planar surface, manufacturing method of microstructure using single-particle film etching mask, and microstructure acquired by manufacturing method |
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