JPH04265516A - Magnetic disk medium - Google Patents
Magnetic disk mediumInfo
- Publication number
- JPH04265516A JPH04265516A JP2466791A JP2466791A JPH04265516A JP H04265516 A JPH04265516 A JP H04265516A JP 2466791 A JP2466791 A JP 2466791A JP 2466791 A JP2466791 A JP 2466791A JP H04265516 A JPH04265516 A JP H04265516A
- Authority
- JP
- Japan
- Prior art keywords
- magnetic disk
- disk medium
- amorphous carbon
- protective film
- hard amorphous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003481 amorphous carbon Inorganic materials 0.000 claims abstract description 29
- 230000001681 protective effect Effects 0.000 claims abstract description 20
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 11
- 125000001153 fluoro group Chemical group F* 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 14
- 238000004544 sputter deposition Methods 0.000 abstract description 9
- 229910000531 Co alloy Inorganic materials 0.000 abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 229910018104 Ni-P Inorganic materials 0.000 abstract description 3
- 229910018536 Ni—P Inorganic materials 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 20
- 239000007789 gas Substances 0.000 description 15
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 14
- 229910052731 fluorine Inorganic materials 0.000 description 14
- 239000011737 fluorine Substances 0.000 description 14
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 10
- 201000001432 Coffin-Siris syndrome Diseases 0.000 description 7
- 238000010794 Cyclic Steam Stimulation Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005461 lubrication Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Landscapes
- Magnetic Record Carriers (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、コンピュータの外部記
憶に用いられる磁気ディスク装置に関し、特に、磁気デ
ィスク媒体に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetic disk device used for external storage of a computer, and more particularly to a magnetic disk medium.
【０００２】0002
【従来の技術】磁気ディスク媒体は、Ｎｉ−Ｐめっき処
理を施したアルミニウム基板上に、スパッタ法やめっき
法で形成したＣｏ合金の磁性膜を有し、さらにその上に
、耐久性及び耐食性を向上させる目的で保護膜を有する
のが一般的である。保護膜にはスパッタ法によるカーボ
ン膜が用いられるのが一般的である。[Prior Art] A magnetic disk medium has a Co alloy magnetic film formed by sputtering or plating on a Ni-P plated aluminum substrate, and has durability and corrosion resistance added thereon. It is common to have a protective film for the purpose of improving the performance. A carbon film formed by sputtering is generally used as the protective film.
【０００３】スパッタ法によるカーボン膜を改善しよう
と、最近、硬質非晶質カーボンが研究され始めている。
この硬質非晶質カーボンは、Ｄｉａｍｏｎｄ ｌｉｋ
ｅ Ｃａｒｂｏｎと呼ばれ、ダイヤモンドに近い高硬
度を有している。スパッタカーボン膜のビッカース硬度
が約１０００ｋｇ／ｍｍ２ であるのに対し、硬質非
晶質カーボン膜は約５０００ｋｇ／ｍｍ２ である。[0003]Recently, hard amorphous carbon has begun to be studied in order to improve carbon films produced by sputtering. This hard amorphous carbon is Diamond lik
It is called e Carbon and has a high hardness close to that of diamond. The sputtered carbon film has a Vickers hardness of about 1000 kg/mm2, while the hard amorphous carbon film has a Vickers hardness of about 5000 kg/mm2.
【０００４】0004
【発明が解決しようとする課題】磁気ディスク装置では
磁気ヘッドと磁気ディスク媒体を接触させた状態で、装
置の起動・停止を行うコンタクトスタートストップ（Ｃ
ＳＳ）方式が多く用いられている。従来のスパッタ法に
よるカーボン保護膜を有する磁気ディスク媒体は、ＣＳ
Ｓを繰り返し行うと摩擦係数が上昇して装置の起動に支
障をきたしたり、また、媒体表面が損傷するという課題
があった。[Problems to be Solved by the Invention] In magnetic disk drives, contact start/stop (C
SS) method is often used. A magnetic disk medium having a carbon protective film formed by the conventional sputtering method is CS
If S is repeated, the coefficient of friction increases, causing problems in starting the device and damaging the surface of the medium.
【０００５】また、硬質非晶質カーボン膜は非常に硬く
耐摩耗性には優れているが、潤滑性能が低く高い摩擦係
数を有するという課題があった。[0005]Although hard amorphous carbon films are very hard and have excellent wear resistance, they have the problem of poor lubrication performance and a high coefficient of friction.
【０００６】本発明は従来の上記実情に鑑みてなされた
ものであり、従って本発明の目的は、従来の技術に内在
する上記諸課題を解決することを可能とした新規な磁気
ディスク媒体を提供することにある。The present invention has been made in view of the above-mentioned conventional circumstances, and therefore, an object of the present invention is to provide a novel magnetic disk medium capable of solving the above-mentioned problems inherent in the conventional technology. It's about doing.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る磁気ディスク媒体は、ふっ素原子を含
む硬質非晶質カーボン保護膜を有する。SUMMARY OF THE INVENTION In order to achieve the above object, a magnetic disk medium according to the present invention has a hard amorphous carbon protective film containing fluorine atoms.
【０００８】[0008]
【作用】本発明に係る磁気ディスク媒体は、膜硬度が高
いために耐摩耗性に優れ、そして、ふっ素原子を含むた
めに摩擦係数が低く潤滑性が良いので、耐久性に優れて
いる。[Operation] The magnetic disk medium according to the present invention has high film hardness, so it has excellent wear resistance, and because it contains fluorine atoms, it has a low coefficient of friction and good lubricity, so it has excellent durability.
【０００９】[0009]
【実施例】次に、本発明をその好ましい各実施例につい
て図面を参照して具体的に説する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, preferred embodiments of the present invention will be specifically explained with reference to the drawings.
【００１０】図１は本発明による磁気ディスク媒体の第
１〜第４の各実施例の断面図である。FIG. 1 is a cross-sectional view of each of the first to fourth embodiments of the magnetic disk medium according to the present invention.
【００１１】図１を参照するに、アルミニウム基板１に
めっきによって形成されたＮｉ−Ｐ層２からなる下地層
と、スパッタ法で形成されたＣｏ合金層３からなる磁性
層と、スパッタ法で形成されたＳｉ層４からなる保護膜
下地層と、ＣＶＤ法あるいはイオンビーム法で形成され
たふっ素含有硬質非晶質カーボン５からなる保護膜層で
構成される。Referring to FIG. 1, a base layer consisting of a Ni--P layer 2 formed by plating on an aluminum substrate 1, a magnetic layer consisting of a Co alloy layer 3 formed by sputtering, and a magnetic layer consisting of Co alloy layer 3 formed by sputtering. The protective film base layer includes a protective film base layer made of a Si layer 4, and a protective film layer made of fluorine-containing hard amorphous carbon 5 formed by a CVD method or an ion beam method.
【００１２】図２は本発明に係る磁気ディスク媒体の第
５の実施例の断面を示し、ＣＶＤ法あるいはイオンビー
ム法で形成された硬質非晶質カーボン６の上にふっ素含
有硬質非晶質カーボン５の保護膜層が成膜されている。FIG. 2 shows a cross section of a fifth embodiment of the magnetic disk medium according to the present invention, in which fluorine-containing hard amorphous carbon is deposited on hard amorphous carbon 6 formed by the CVD method or the ion beam method. No. 5 protective film layer is formed.
【００１３】次に、各実施例のふっ素含有硬質非晶質カ
ーボン５の形成方法について説明する。Next, a method for forming the fluorine-containing hard amorphous carbon 5 of each example will be explained.
【００１４】［実施例１］ ふっ素含有硬質非晶質カ
ーボン５の形成に用いた直流グロー放電プラズマＣＶＤ
装置の構成を図４に示す。真空チャンバ８内に、ガス導
入管９よりメタン（ＣＨ４ ）と水素（Ｈ２ ）と四ふ
っ化炭素（ＣＦ４ ）の混合ガス（混合率；ＣＨ４ ／
Ｈ２ ＝０．０５〜０．２，ＣＦ４ ／Ｈ２ ＝０．０
１〜０．１）を導入し、真空度を０．１〜１０ｔｏｒｒ
に調整する。基板７に平行に平板型の陽極１０と陰極１
１を置き、陽極１０には直流電源１２より正電圧で数百
ボルトまでの電圧を印加し、電極間でグロー放電プラズ
マを発生させる。
プラズマは導入されたガスと相互作用し、基板７上にふ
っ素含有硬質非晶質カーボン５膜を形成する。放電電流
密度は０．１〜１ｍＡ／ｍｍ２ 、基板温度は室温で行
なった。[Example 1] Direct current glow discharge plasma CVD used to form fluorine-containing hard amorphous carbon 5
The configuration of the device is shown in Figure 4. A mixed gas of methane (CH4), hydrogen (H2), and carbon tetrafluoride (CF4) (mixing ratio: CH4/
H2 =0.05~0.2, CF4/H2 =0.0
1 to 0.1) and set the vacuum degree to 0.1 to 10 torr.
Adjust to. A flat anode 10 and a cathode 1 are arranged parallel to the substrate 7.
1 is placed, and a positive voltage of up to several hundred volts is applied to the anode 10 from a DC power supply 12 to generate glow discharge plasma between the electrodes. The plasma interacts with the introduced gas to form a fluorine-containing hard amorphous carbon 5 film on the substrate 7. The discharge current density was 0.1 to 1 mA/mm2, and the substrate temperature was room temperature.
【００１５】［実施例２］ ふっ素含有硬質非晶質カ
ーボン５の形成に用いたＲＦプラズマＣＶＤ装置の構成
を図５に示す。真空チャンバ１３内に、ガス導入管１４
より、メタン（ＣＨ４ ）とふっ化炭素の混合ガス（混
合率；ＣＦ４ ／ＣＨ４ ＝０．０１〜０．１）を導入
し、真空度を０．０１〜０．２ｔｏｒｒに調整する。基
板７に平行に平板型の電極１５を置き、電極１５にはＲ
Ｆ電源１６より周波数１３．５６ＭＨｚのラジオ波を５
０〜２０００Ｗの電力で加え、ＲＦ放電プラズマを発生
させる。プラズマは導入されたガスと相互作用し、基板
７上にふっ素含有硬質非晶質カーボン５膜を形成する。
パワー密度０．１〜５Ｗ／ｃｍ２ 、基板温度は室温で
行った。[Example 2] The configuration of an RF plasma CVD apparatus used to form fluorine-containing hard amorphous carbon 5 is shown in FIG. A gas introduction pipe 14 is inserted into the vacuum chamber 13.
Then, a mixed gas of methane (CH4) and carbon fluoride (mixing ratio: CF4/CH4 = 0.01 to 0.1) is introduced, and the degree of vacuum is adjusted to 0.01 to 0.2 torr. A flat electrode 15 is placed parallel to the substrate 7, and the electrode 15 has an R
5 radio waves with a frequency of 13.56 MHz from the F power supply 16
A power of 0-2000 W is applied to generate an RF discharge plasma. The plasma interacts with the introduced gas to form a fluorine-containing hard amorphous carbon 5 film on the substrate 7. The power density was 0.1 to 5 W/cm2, and the substrate temperature was room temperature.
【００１６】［実施例３］ ふっ素含有硬質非晶質カ
ーボン５の形成に用いたＥＣＲプラズマＣＶＤ装置の構
成を図６に示す。真空チャンバ１７内にガス導入管１８
より、メタン（ＣＨ４ ）と四ふっ化炭素の混合ガス（
混合率；ＣＦ４ ／ＣＨ４ ＝０．０１〜０．１）を導
入し、真空度を１０−４〜１０−３ｔｏｒｒに調整する
。電磁コイル１９により、８７５Ｇの磁界をプラズマ室
２０の回りに発生させ、マイクロ波電源２１より周波数
２．４５ＧＨｚのマイクロ波をプラズマ室２０に導入す
ると、電子がサイクロトロン共鳴（ＥＣＲ）を起こして
プラズマが形成される。プラズマは導入されたガスと相
互作用し、基板７上にふっ素含有硬質非晶質カーボン膜
５を形成する。マイクロ波の投入パワーは５０〜１５０
０Ｗ、基板は室温で行った。[Example 3] The configuration of an ECR plasma CVD apparatus used to form the fluorine-containing hard amorphous carbon 5 is shown in FIG. Gas introduction pipe 18 into vacuum chamber 17
From this, a mixed gas of methane (CH4) and carbon tetrafluoride (
A mixing ratio of CF4/CH4 = 0.01 to 0.1) is introduced, and the degree of vacuum is adjusted to 10-4 to 10-3 torr. When a magnetic field of 875 G is generated around the plasma chamber 20 by the electromagnetic coil 19 and microwaves with a frequency of 2.45 GHz are introduced into the plasma chamber 20 from the microwave power source 21, the electrons cause cyclotron resonance (ECR) and the plasma is generated. It is formed. The plasma interacts with the introduced gas to form a fluorine-containing hard amorphous carbon film 5 on the substrate 7. Microwave input power is 50 to 150
0W, the substrate was at room temperature.
【００１７】［実施例４］ ふっ素含有硬質非晶質カ
ーボン５の形成に用いたイオンビーム蒸着装置の構成を
図７に示す。ガス噴出ノズル２２からイオン化チャンバ
２３内に噴出されたメタン（ＣＨ４ ）と四ふっ化炭素
（ＣＦ４ ）の混合ガス（混合率；ＣＦ４ ／ＣＨ４
＝０．０１〜０．１）は、フィラメント２４から放出さ
れて電子ビーム加速電極２５で加速された高速の電子と
衝突し、一部がイオン化される。イオンは、イオンビー
ム加速電極２５によって高速に加速され、基板７に達し
て、ふっ素含有硬質非晶質カーボン５膜が形成される。[Example 4] FIG. 7 shows the configuration of an ion beam evaporation apparatus used to form the fluorine-containing hard amorphous carbon 5. A mixed gas (mixing ratio: CF4/CH4) of methane (CH4) and carbon tetrafluoride (CF4) is ejected from the gas ejection nozzle 22 into the ionization chamber 23.
=0.01 to 0.1) collide with high-speed electrons emitted from the filament 24 and accelerated by the electron beam accelerating electrode 25, and a portion of them is ionized. The ions are accelerated at high speed by the ion beam accelerating electrode 25, reach the substrate 7, and a fluorine-containing hard amorphous carbon 5 film is formed.
【００１８】［実施例５］ 直流グロー放電プラズマ
ＣＶＤ装置を用いて、メタン（ＣＨ４）と水素（Ｈ２
）の混合ガス（混合率；ＣＨ４ ／Ｈ２ ＝０．１〜１
．０）より硬質非晶質カーボン６を形成し、その上に、
前記実施例１と同様にしてふっ素含有硬質非晶質カーボ
ン５を形成した。同様にして、ＲＦプラズマＣＶＤ法、
ＥＣＲプラズマＣＶＤ法、及びインオビーム法を用いて
も行うことができる。[Example 5] Methane (CH4) and hydrogen (H2
) mixed gas (mixing ratio; CH4 /H2 =0.1-1
．． 0) Form harder amorphous carbon 6, and on top of that,
Fluorine-containing hard amorphous carbon 5 was formed in the same manner as in Example 1 above. Similarly, RF plasma CVD method,
It can also be performed using the ECR plasma CVD method and the in-o-beam method.
【００１９】本発明の実施例１〜５の磁気ディスク媒体
のＣＳＳ試験結果を従来のスパッタ法によるカーボン保
護膜を有する磁気ディスク媒体の結果と比較して図３に
示す。ここで、ＣＳＳ試験には、Ａｌ２ Ｏ３ ＴｉＣ
から成る１５ｇ荷重のワトラスジンバル型磁気ヘッドを
使用した。また、ＣＳＳ試験を行った各例の保護膜の膜
厚を表１に示す。FIG. 3 shows the CSS test results of the magnetic disk media of Examples 1 to 5 of the present invention in comparison with the results of the magnetic disk media having a carbon protective film formed by the conventional sputtering method. Here, for the CSS test, Al2O3TiC
A Watrous gimbal type magnetic head with a load of 15 g was used. Table 1 also shows the thickness of the protective film of each example subjected to the CSS test.
【００２０】[0020]
【表１】[Table 1]
【００２１】[0021]
【００２２】図３より、従来例では、ＣＳＳ回数と共に
摩擦係数が上昇し、ＣＳＳ４万回で媒体表面が損傷した
。本発明の実施例は摩擦係数の上昇が小さく、ＣＳＳ５
万回で媒体表面に損傷はなかった。From FIG. 3, in the conventional example, the friction coefficient increased with the number of CSSs, and the medium surface was damaged after 40,000 CSSs. The embodiment of the present invention has a small increase in the coefficient of friction and has a CSS5
There was no damage to the media surface after 10,000 cycles.
【００２３】[0023]
【発明の効果】以上説明したように、本発明によれば、
保護膜として膜硬度が高く、ふっ素原子を含み、潤滑性
に優れるふっ素含有硬質非晶質カーボン膜を用いたため
に、従来と比べ、繰り返しＣＳＳによる摩擦係数の上昇
が小さく、損傷しにくく、耐久性が優れているという効
果が得られる。[Effects of the Invention] As explained above, according to the present invention,
Because we use a fluorine-containing hard amorphous carbon film that has high film hardness, contains fluorine atoms, and has excellent lubricity as a protective film, the increase in the coefficient of friction due to repeated CSS is smaller than before, making it less likely to be damaged and more durable. The effect is that it is superior.
【図１】本発明に係る磁気ディスク媒体の実施例１〜４
の断面図である。FIG. 1: Examples 1 to 4 of magnetic disk media according to the present invention
FIG.
【図２】本発明に係る磁気ディスク媒体の実施例５の断
面図である。FIG. 2 is a sectional view of Example 5 of the magnetic disk medium according to the present invention.
【図３】本発明による実施例のＣＳＳ試験結果を従来例
と比較した図である。FIG. 3 is a diagram comparing CSS test results of an example according to the present invention with a conventional example.
【図４】実施例１、５に用いられた直流グロー放電プラ
ズマＣＶＤ装置の構成を示す概略断面図である。FIG. 4 is a schematic cross-sectional view showing the configuration of a DC glow discharge plasma CVD apparatus used in Examples 1 and 5.
【図５】実施例２に用いられたＲＦプラズマＣＶＤ装置
の構成を示す概略断面図である。FIG. 5 is a schematic cross-sectional view showing the configuration of an RF plasma CVD apparatus used in Example 2.
【図６】実施例３に用いられたＥＣＲプラズマＣＶＤ装
置の構成を示す概略断面図である。FIG. 6 is a schematic cross-sectional view showing the configuration of an ECR plasma CVD apparatus used in Example 3.
【図７】実施例４に用いられたイオンビーム蒸着装置の
構成を示す概略断面図である。7 is a schematic cross-sectional view showing the configuration of an ion beam evaporation apparatus used in Example 4. FIG.
１…アルミニウム基板 ２…Ｎｉ−Ｐ層 ３…Ｃｏ合金層 ４…Ｓｉ層 ５…ふっ素含有硬質非晶質カーボン ６…硬質非晶質カーボン ７…基板 ８…真空チャンバ ９…ガス導入管 １０…陽極 １１…陰極 １２…直流電源 １３…真空チャンバ １４…ガス導入管 １５…電極 １６…ＲＦ電源 １７…真空チャンバ １８…ガス導入管 １９…電磁コイル ２０…プラズマ室 ２１…マイクロ波電源 ２２…ガス噴出ノズル ２３…電子ビーム加速電極 ２４…フィラメント ２５…イオンビーム加速電極 ２６…真空チャンバ ２７…イオンビーム加速電極 1...Aluminum substrate 2...Ni-P layer 3...Co alloy layer 4...Si layer 5...Fluorine-containing hard amorphous carbon 6...Hard amorphous carbon 7...Substrate 8...Vacuum chamber 9...Gas introduction pipe 10...Anode 11...Cathode 12...DC power supply 13...Vacuum chamber 14...Gas introduction pipe 15...electrode 16...RF power supply 17...Vacuum chamber 18...Gas introduction pipe 19...Electromagnetic coil 20...Plasma chamber 21...Microwave power supply 22...Gas jet nozzle 23...Electron beam accelerating electrode 24...Filament 25...Ion beam accelerating electrode 26...Vacuum chamber 27...Ion beam accelerating electrode
Claims (6)
保護膜を有することを特徴とした磁気ディスク媒体。1. A magnetic disk medium characterized by having a hard amorphous carbon protective film containing fluorine atoms.
ボン保護膜の上層のみに含まれることを更に特徴とする
請求項１に記載の磁気ディスク媒体。2. The magnetic disk medium according to claim 1, further characterized in that the fluorine atoms are contained only in the upper layer of the hard amorphous carbon protective film.
グロー放電プラズマＣＶＤ（Ｃｈｅｍｉｃａｌ Ｖａ
ｐｅｒ Ｄｅｐｏｓｉｔｉｏｎ）法によって形成する
ことを更に特徴とする請求項１または請求項２のいずれ
か１項に記載の磁気ディスク媒体。3. The hard amorphous carbon protective film is formed by direct current glow discharge plasma CVD (Chemical Vacuum
3. The magnetic disk medium according to claim 1, further characterized in that the magnetic disk medium is formed by a per-deposition method.
プラズマＣＶＤ法によって形成することを更に特徴とす
る請求項１または請求項２のいずれか１項に記載の磁気
ディスク媒体。4. The hard amorphous carbon protective film is subjected to RF
3. The magnetic disk medium according to claim 1, further characterized in that the magnetic disk medium is formed by a plasma CVD method.
Ｒ（ＥｌｅｃｔｒｏｎＣｙｃｌｏｔｒｏｎ Ｒｅｓｏ
ｎａｎｃｅ）プラズマＣＶＤ法によって形成することを
更に特徴とする請求項１または請求項２のいずれか１項
に記載の磁気ディスク媒体。5. The hard amorphous carbon protective film is coated with EC.
R (Electron Cyclotron Reso
3. The magnetic disk medium according to claim 1, further characterized in that the magnetic disk medium is formed by a plasma CVD method.
ンビーム法によって形成することを更に特徴とする請求
項１または請求項２のいずれか１項に記載の磁気ディス
ク媒体。6. The magnetic disk medium according to claim 1, further characterized in that the hard amorphous carbon protective film is formed by an ion beam method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2466791A JPH04265516A (en) | 1991-02-19 | 1991-02-19 | Magnetic disk medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2466791A JPH04265516A (en) | 1991-02-19 | 1991-02-19 | Magnetic disk medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04265516A true JPH04265516A (en) | 1992-09-21 |
Family
ID=12144496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2466791A Pending JPH04265516A (en) | 1991-02-19 | 1991-02-19 | Magnetic disk medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04265516A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0942072A3 (en) * | 1998-03-12 | 1999-10-13 | Lucent Technologies Inc. | Method for fabricating fluorinated diamond-like carbon layers |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
-
1991
- 1991-02-19 JP JP2466791A patent/JPH04265516A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6835523B1 (en) | 1993-05-09 | 2004-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| US6468617B1 (en) | 1993-07-20 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Apparatus for fabricating coating and method of fabricating the coating |
| EP0942072A3 (en) * | 1998-03-12 | 1999-10-13 | Lucent Technologies Inc. | Method for fabricating fluorinated diamond-like carbon layers |
| US6312766B1 (en) | 1998-03-12 | 2001-11-06 | Agere Systems Guardian Corp. | Article comprising fluorinated diamond-like carbon and method for fabricating article |
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