JPH0426541B2 - - Google Patents

Info

Publication number
JPH0426541B2
JPH0426541B2 JP60169093A JP16909385A JPH0426541B2 JP H0426541 B2 JPH0426541 B2 JP H0426541B2 JP 60169093 A JP60169093 A JP 60169093A JP 16909385 A JP16909385 A JP 16909385A JP H0426541 B2 JPH0426541 B2 JP H0426541B2
Authority
JP
Japan
Prior art keywords
glass
powder
pbo
silicon wafer
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60169093A
Other languages
Japanese (ja)
Other versions
JPS6229145A (en
Inventor
Kazuo Hatano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Electric Glass Co Ltd
Original Assignee
Nippon Electric Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Glass Co Ltd filed Critical Nippon Electric Glass Co Ltd
Priority to JP16909385A priority Critical patent/JPS6229145A/en
Publication of JPS6229145A publication Critical patent/JPS6229145A/en
Publication of JPH0426541B2 publication Critical patent/JPH0426541B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

産業上の利用分野 本発明はシリコンウエハー、特に寸法が4〜5
インチの大口径シリコンウエハーの表面を保護、
あるいは安定化(パシベーシヨン)するために被
覆するガラスに関するものである。 従来技術 シリコンウエハー被覆用ガラスに要求される特
性としては、ガラスの熱膨張係数がシリコンウエ
ハーのそれに適合すること、700〜900℃の温度範
囲の焼成により良好な封着ができること、電極形
成などの半導体製造工程のために良好な耐薬品
性、耐酸性を有すること、被覆後半導体素子の電
気的特性、特に逆耐電圧、逆洩れ電流の特性に優
れていること等があげられる。 従来、この種の被覆用ガラスとしてZnOを主成
分とするZnO−B2O3−SiO2系の亜鉛系ガラスと
PbOを主成分とするPbO−SiO2系あるいはPbO
−B2O3−SiO2系の鉛系ガラスが用いられてきた。
これらの従来の被覆用ガラスのうち鉛系ガラスは
亜鉛系ガラスに比べ耐薬品性に優れているという
利点を有するが熱膨張係数がシリコンウエハーと
比べて大きいため、焼成後にシリコンウエハーに
反りが生じやすく電極パターンを作成することが
困難となつた。この反りは近年のようにシリコン
ウエハーの寸法が4〜5インチと大口径化される
程顕著になつている。更にこれ以外にも焼成後、
ガラスにクラツクが入りやすくなり、メサ型シリ
コンウエハーの構造をガラス部分をカツトするシ
ングルモート型からシリコン部分をカツトするダ
ブルモート型に変更する必要が生じ、生産コスト
が高くなるという欠点があつた。 発明の目的 本発明の目的は、先記シリコンウエハー被覆用
ガラスに要求される諸特性に優れ、特に従来の鉛
系ガラスの熱膨張特性の欠点を改良し、寸法が4
〜5インチの大口径で厚みの薄いシリコンウエハ
ーに直接被覆した場合にもガラスにクラツクが入
りにくく、シリコンウエハーの反りもない被覆用
ガラスを提供することである。 発明の構成 本発明者は種々の研究を行つた結果、口径4〜
5インチのシリコンウエハーを被覆するには、被
覆用ガラスの熱膨張係数を42×10-7/℃以下にす
ればよいことを見いだし、本発明として提案する
ものである。 即ち、本発明の大口径シリコンウエハー被覆用
ガラスは、重量百分率で、PbO45〜65%、
SiO232〜45%、Al2O30.5〜15%からなるPbO−
SiO2系のガラス粉末、あるいはPbO42〜65%、
B2O30.5〜14%、SiO215〜48%、Al2O31〜18%か
らなるPbO−B2O3−SiO2系のガラス粉末に、重
量比でウイレマイト粉末10〜50%、石英ガラス粉
末0.01〜25%の1者又は両者を混合してなること
を特徴とする。 更に本発明の被覆用ガラスは、必要に応じて先
記のPbO、SiO2、B2O3、Al2O3の成分以外にも、
MnO2、CeO2、Sb2O3、Ta2O5、SnO2、Nb2O5
Bi2O3、ZnOを各々5%以下含有することができ
る。しかしながら、MnO2、CeO2、Sb2O3
Ta2O5、SnO2、Nb2O5、Bi2O3の各成分が5%よ
り多い場合は、ガラスが不均一になると同時に熱
膨張係数も高くなる。又、ZnOが5%より多い場
合は、ガラスが分相し、安定したガラスが得られ
ない。 尚、先記のPbO−SiO2系あるいはPbO−B2O3
−SiO2系ガラス粉末は、軟化点が570〜790℃、
熱膨張係数が42〜55×10-7-1(30〜300℃)の特
性を有することが好ましい。 下表に前記したPbO−SiO2系ガラス及びPbO
−B2O3−SiO2系ガラスの組成例と各ガラスの軟
化点、熱膨張係数を示す。
INDUSTRIAL APPLICATION The present invention relates to silicon wafers, particularly those having dimensions 4 to 5.
Protects the surface of inch large diameter silicon wafers,
Or it relates to glass coated for stabilization (passivation). Prior Art The characteristics required for glass for coating silicon wafers include that the coefficient of thermal expansion of the glass matches that of silicon wafers, that good sealing can be achieved by firing in the temperature range of 700 to 900 degrees Celsius, and that it is possible to form electrodes. It has good chemical resistance and acid resistance for the semiconductor manufacturing process, and the electrical properties of the semiconductor element after coating, especially excellent reverse withstand voltage and reverse leakage current properties. Conventionally, this type of coating glass has been ZnO-B 2 O 3 -SiO 2- based zinc-based glass, which has ZnO as its main component.
PbO−SiO 2 system with PbO as the main component or PbO
-B 2 O 3 -SiO 2 -based lead-based glasses have been used.
Among these conventional coating glasses, lead-based glass has the advantage of superior chemical resistance compared to zinc-based glass, but because its coefficient of thermal expansion is larger than that of silicon wafers, silicon wafers may warp after firing. It became difficult to easily create an electrode pattern. This warpage has become more noticeable as silicon wafers have increased in diameter to 4 to 5 inches in recent years. In addition to this, after firing,
Cracks were more likely to form in the glass, and the structure of the mesa silicon wafer had to be changed from a single moat type in which the glass portion was cut to a double moat type in which the silicon portion was cut, resulting in higher production costs. OBJECT OF THE INVENTION The purpose of the present invention is to improve the various properties required for the silicon wafer coating glass mentioned above, particularly to improve the shortcomings in the thermal expansion properties of conventional lead-based glass, and to
To provide a glass for coating which hardly causes cracks in the glass even when it is directly coated on a silicon wafer having a large diameter of ~5 inches and a thin thickness, and the silicon wafer does not warp. Structure of the Invention As a result of various studies, the inventor has found that
It has been found that in order to coat a 5-inch silicon wafer, the thermal expansion coefficient of the coating glass should be 42×10 -7 /°C or less, and this is proposed as the present invention. That is, the large-diameter silicon wafer coating glass of the present invention contains PbO45 to 65% in weight percentage;
PbO− consisting of SiO 2 32-45%, Al 2 O 3 0.5-15%
SiO2 -based glass powder or PbO42~65%,
PbO - B2O3 -SiO2 glass powder consisting of 0.5-14 % B2O3 , 15-48% SiO2 , 1-18% Al2O3 , and 10-50% willemite powder by weight , 0.01 to 25% of quartz glass powder, or a mixture of both. Furthermore, the coating glass of the present invention may contain, if necessary, in addition to the above-mentioned components PbO, SiO 2 , B 2 O 3 , and Al 2 O 3 .
MnO2 , CeO2 , Sb2O3 , Ta2O5 , SnO2 , Nb2O5 ,
Each of Bi 2 O 3 and ZnO can be contained in an amount of 5% or less. However, MnO 2 , CeO 2 , Sb 2 O 3 ,
When each component of Ta 2 O 5 , SnO 2 , Nb 2 O 5 , and Bi 2 O 3 is more than 5%, the glass becomes non-uniform and at the same time the coefficient of thermal expansion becomes high. Further, if the ZnO content is more than 5%, the glass undergoes phase separation and a stable glass cannot be obtained. In addition, the above-mentioned PbO-SiO 2 system or PbO-B 2 O 3
−SiO 2 glass powder has a softening point of 570 to 790℃,
It is preferable to have a thermal expansion coefficient of 42 to 55×10 −7 ° C. −1 (30 to 300° C.). PbO−SiO 2 glass and PbO listed in the table below
-B 2 O 3 -SiO 2 composition examples, softening points and thermal expansion coefficients of each glass are shown.

【表】【table】

【表】 先記の鉛系のガラス粉末は、全体的に好ましい
ガラス特性を有するけれども、本発明の被覆用ガ
ラスにおいては、熱膨張係数を42×10-7/℃以下
にするためさらにウイレマイト粉末10〜50%、石
英ガラス粉末0.01〜25%の1者又は両者を添加し
てなる。すなわちウイレマイト粉末は、ガラスの
熱膨張係数を低下させ、大口径シリコンウエハー
の封着に最適なガラスに調整する作用があり、こ
れによりシリコンウエハーの反りがなくなり、電
極パターンを正確に形成することができると共に
被覆ガラスのクラツクも防止できる。しかしなが
らその添加量が10%以下になるとシリコンウエハ
ーの寸法が4〜5インチの大口径で厚みが薄い場
合、充分にガラスの熱膨張係数を下げることがで
きず、シリコンウエハーが反りやすくなる。また
50%以上になるとガラスの流動性が悪くなり、充
分な封着が得られなくなる。ウイレマイト
(Zn2SiO4)粉末は、亜鉛華及びシリカ粉をZnO
とSiO2のモル比が2:1になるように調合し、
約1450℃の高温で焼成した後、得られた焼結体を
微粉砕して製造したものを使用する。石英ガラス
粉末の添加量は、0.01〜25%が好適であり、0.01
%以下は、ガラスの熱膨張係数が充分下がらず、
25%以上の場合は、石英ガラス粉末とガラスが反
応して流動性が損なわれ、充分な封着が得られな
い。 以上説明した本発明に係る大口径シリコンウエ
ハー被覆用ガラスを製造するに当たつて、PbO、
SiO2、Al2O3、B2O3等の各成分の原料を調合し
てバツチとし、1500〜1600℃の温度で約1時間溶
融してガラス化する。この溶融したガラスを水砕
した後、ボールミル等の粉砕機により微粉砕し、
350メツシユで分級する。 シリコンウエハーへの被覆、封着に当たつて
は、上述のようにして製造した被覆用ガラスを有
機溶媒に分散させて、電気泳動法によつてシリコ
ンウエハーの表面に電着させ、次いでシリコンウ
エハーを乾燥後、電気焼成炉において700〜800℃
で10〜15分間加熱して封着する。 実施例 表3は、表1.2のガラス粉末を用いて本発明に
おけるウイレマイト粉末及び石英ガラス粉末の添
加量、熱膨張係数、封着温度を示したものであ
る。
[Table] Although the above-mentioned lead-based glass powder has overall favorable glass properties, in the coating glass of the present invention, willemite powder is further added to reduce the thermal expansion coefficient to 42×10 -7 /°C or less. 10 to 50% and 0.01 to 25% of quartz glass powder, or both. In other words, willemite powder has the effect of lowering the coefficient of thermal expansion of glass, making the glass optimal for sealing large-diameter silicon wafers.This eliminates warping of silicon wafers and makes it possible to form electrode patterns accurately. At the same time, it is possible to prevent cracks in the coated glass. However, if the amount added is less than 10%, if the silicon wafer has a large diameter of 4 to 5 inches and is thin, the coefficient of thermal expansion of the glass cannot be lowered sufficiently, and the silicon wafer tends to warp. Also
If it exceeds 50%, the fluidity of the glass deteriorates and sufficient sealing cannot be obtained. Willemite (Zn 2 SiO 4 ) powder is made by combining zinc white and silica powder with ZnO
and SiO 2 in a molar ratio of 2:1,
After firing at a high temperature of about 1450°C, the resulting sintered body is finely pulverized and used. The amount of quartz glass powder added is preferably 0.01 to 25%, and 0.01% to 25% is suitable.
% or less, the coefficient of thermal expansion of the glass will not decrease sufficiently.
If it is more than 25%, the quartz glass powder and glass will react and fluidity will be impaired, making it impossible to obtain sufficient sealing. In manufacturing the large-diameter silicon wafer coating glass according to the present invention as described above, PbO,
Raw materials for each component such as SiO 2 , Al 2 O 3 , B 2 O 3 and the like are mixed and made into a batch, and the mixture is melted and vitrified at a temperature of 1500 to 1600° C. for about 1 hour. After pulverizing this molten glass, it is finely pulverized using a pulverizer such as a ball mill.
Classify at 350 meters. For coating and sealing silicon wafers, the coating glass produced as described above is dispersed in an organic solvent, electrodeposited on the surface of the silicon wafer by electrophoresis, and then the silicon wafer is After drying, heat at 700 to 800℃ in an electric kiln.
Heat for 10 to 15 minutes to seal. Examples Table 3 shows the amounts of willemite powder and quartz glass powder added, thermal expansion coefficients, and sealing temperatures in the present invention using the glass powders shown in Table 1.2.

【表】 表3から従来のガラス粉末にウイレマイト粉
末、石英ガラス粉末の1者又は両者を添加すると
大幅に熱膨張係数が低下し、また900℃以下の比
較的低い温度で封着できることがわかる。更にこ
れらのガラスを電気泳動法によりシリコンウエハ
ーに被覆、焼成して作成した設計耐圧1500〜
2000Vの半導体装置につき電気特性を測定した
所、逆洩れ電流が少なく、設計耐圧を満足する逆
耐電圧が得られた。 発明の効果 以上のように本発明の大口径シリコンウエハー
被覆用ガラスは電気的特性などシリコンウエハー
被覆用ガラスに要求される諸特性を満足し、特
に、熱膨張係数がシリコンのそれにあつた42×
10-7/℃以下であるため、寸法が4〜5インチの
大口径で厚みの薄いシリコンウエハーに直接被覆
した場合にもガラスの割れがなく、シリコンウエ
ハーの反りもないという優れた特性を示す。
[Table] Table 3 shows that when one or both of willemite powder and quartz glass powder is added to conventional glass powder, the coefficient of thermal expansion is significantly lowered, and sealing can be performed at a relatively low temperature of 900° C. or less. Furthermore, these glasses are coated on silicon wafers using the electrophoresis method and baked to create a design withstand voltage of 1500~.
When we measured the electrical characteristics of a 2000V semiconductor device, we found that the reverse leakage current was small and the reverse withstand voltage satisfied the design withstand voltage. Effects of the Invention As described above, the large-diameter silicon wafer coating glass of the present invention satisfies the various properties required for silicon wafer coating glass such as electrical properties, and in particular has a thermal expansion coefficient of 42× that is equal to that of silicon.
10 -7 /℃ or less, it exhibits excellent properties such as no cracking of the glass and no warping of the silicon wafer even when directly coated on a large diameter and thin silicon wafer with dimensions of 4 to 5 inches. .

Claims (1)

【特許請求の範囲】[Claims] 1 重量百分率で、PbO45〜65%、SiO232〜45
%、Al2O30.5〜15%からなるPbO−SiO2系のガラ
ス粉末、あるいはPbO42〜65%、B2O30.5〜14
%、SiO215〜48%、Al2O31〜18%からなるPbO
−B2O3−SiO2系のガラス粉末に、重量比でウイ
レマイト粉末10〜50%、石英ガラス粉末0.01〜25
%の1者又は両者を混合してなる大口径シリコン
ウエハー被覆用ガラス。
1 In weight percentage, PbO45-65%, SiO2 32-45
%, PbO- SiO2 based glass powder consisting of Al2O3 0.5-15%, or PbO42-65%, B2O3 0.5-14
PbO consisting of %, SiO2 15-48%, Al2O3 1-18 %
−B 2 O 3 −SiO 2 glass powder, willemite powder 10-50%, quartz glass powder 0.01-25% by weight
Large-diameter silicon wafer coating glass made of one or a mixture of the two.
JP16909385A 1985-07-30 1985-07-30 Glass for coating semiconductor Granted JPS6229145A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16909385A JPS6229145A (en) 1985-07-30 1985-07-30 Glass for coating semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16909385A JPS6229145A (en) 1985-07-30 1985-07-30 Glass for coating semiconductor

Publications (2)

Publication Number Publication Date
JPS6229145A JPS6229145A (en) 1987-02-07
JPH0426541B2 true JPH0426541B2 (en) 1992-05-07

Family

ID=15880188

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16909385A Granted JPS6229145A (en) 1985-07-30 1985-07-30 Glass for coating semiconductor

Country Status (1)

Country Link
JP (1) JPS6229145A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022080096A1 (en) * 2020-10-13 2022-04-21 日本電気硝子株式会社 Semiconductor element coating glass and semiconductor element coating material using same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116648A (en) * 1980-02-20 1981-09-12 Nippon Electric Glass Co Ltd Semiconductor covering compound
JPS5840845A (en) * 1981-09-03 1983-03-09 Nippon Electric Glass Co Ltd Glass for semiconductor coating

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56116648A (en) * 1980-02-20 1981-09-12 Nippon Electric Glass Co Ltd Semiconductor covering compound
JPS5840845A (en) * 1981-09-03 1983-03-09 Nippon Electric Glass Co Ltd Glass for semiconductor coating

Also Published As

Publication number Publication date
JPS6229145A (en) 1987-02-07

Similar Documents

Publication Publication Date Title
EP0084936B1 (en) Glass composition for covering semiconductor elements
US3394087A (en) Glass bonded resistor compositions containing refractory metal nitrides and refractory metal
US3392312A (en) Glass encapsulated electronic devices
JPH0764588B2 (en) Glass composition for coating
US3557576A (en) Electrical resistance body and process for its manufacture
JPS638059B2 (en)
CN112512983B (en) Glass for coating semiconductor element and material for coating semiconductor using same
US3180841A (en) Resistance material and resistor made therefrom
US3252812A (en) Glass compositions
JPH0149653B2 (en)
JPH0426541B2 (en)
TWI809240B (en) Glass for covering semiconductor element and material for covering semiconductor using it
CN112512982B (en) Glass for coating semiconductor element and material for coating semiconductor using same
US3806362A (en) Coating for thermoelectric materials
JPS5840845A (en) Glass for semiconductor coating
JP2764880B2 (en) Glass for semiconductor coating
CN115066404B (en) Glass for coating semiconductor element and material for coating semiconductor using same
JPS6238302B2 (en)
JPH048385B2 (en)
JPS6011467B2 (en) Glass-coated semiconductor device and its manufacturing method
JPS6341861B2 (en)
CA1177550A (en) Resistance material, resistor and method of making the same
JPS5950609B2 (en) Glass for semiconductor coating
JPS6124343B2 (en)
JPS6146420B2 (en)