JPH04263065A - Semiconductor producing device - Google Patents
Semiconductor producing deviceInfo
- Publication number
- JPH04263065A JPH04263065A JP2459591A JP2459591A JPH04263065A JP H04263065 A JPH04263065 A JP H04263065A JP 2459591 A JP2459591 A JP 2459591A JP 2459591 A JP2459591 A JP 2459591A JP H04263065 A JPH04263065 A JP H04263065A
- Authority
- JP
- Japan
- Prior art keywords
- crucible
- gold
- thin film
- vacuum evaporation
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000010931 gold Substances 0.000 claims abstract description 40
- 229910052737 gold Inorganic materials 0.000 claims abstract description 15
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 238000009736 wetting Methods 0.000 claims abstract 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 10
- 238000001771 vacuum deposition Methods 0.000 abstract description 8
- 239000010409 thin film Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、真空蒸着用るつぼに関
し、更に詳しくは化合物半導体装置の電極としての金薄
膜形成のための２重構造真空蒸着用るつぼを有する半導
体製造装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vacuum evaporation crucible, and more particularly to a semiconductor manufacturing apparatus having a double structure vacuum evaporation crucible for forming a thin gold film as an electrode of a compound semiconductor device.
【０００２】0002
【従来の技術】従来、ガリウムひ素（ＧａＡｓ）を代表
とする化合物半導体を集積回路用材料とする化合物半導
体装置が研究・開発されてきており、ショットキーゲー
ト電界効果トランジスタ（ＭＥＳＦＥＴ）が実用化され
ている。このような化合物半導体装置の電極材料として
は金（Ａｕ）薄膜がしばしば用いられている。このＡｕ
薄膜は、リフトオフ法等によるパターン形成プロセス
において、スパッタリング法又は真空蒸着法を用いて作
製されている。[Prior Art] Compound semiconductor devices using compound semiconductors, typically gallium arsenide (GaAs), as integrated circuit materials have been researched and developed, and Schottky gate field effect transistors (MESFETs) have been put into practical use. ing. Gold (Au) thin films are often used as electrode materials for such compound semiconductor devices. This Au
The thin film is produced using a sputtering method or a vacuum evaporation method in a pattern forming process using a lift-off method or the like.
【０００３】0003
【発明が解決しようとする課題】ところで従来、真空蒸
着法を用いたＡｕ 薄膜の形成は、電子ビームガンを用
いて行われている。しかしこの電子ビームガンを用いて
Ａｕ の真空蒸着を行う場合、ボール形状の塊りがＡｕ
のソースから飛び出し、作製しようとする薄膜に付着
してしまうという問題があった。このボールの大きさは
、数ミクロンのものも存し、これは最近のＩＣの電極の
大きさと同程度である。このような大きなボールは、集
積回路製作プロセスにおいては異物であり、デバイスの
ショートや断線の原因となっていた。[Problems to be Solved by the Invention] Conventionally, the formation of an Au thin film using a vacuum evaporation method has been carried out using an electron beam gun. However, when performing vacuum evaporation of Au using this electron beam gun, ball-shaped lumps of Au
There was a problem in that the particles flew out from the source and attached to the thin film being fabricated. The size of these balls is several microns, which is comparable to the size of electrodes in recent ICs. Such large balls are foreign objects in the integrated circuit manufacturing process, and have caused short circuits and disconnections in devices.
【０００４】このような大きな金ボールが余り発生しな
い真空蒸着法としてボートを使用する抵抗加熱蒸着法が
開発されている。しかし、このボートによる加熱蒸着法
による場合、一度に大量のＡｕ を飛ばすことができな
いためスループットが低いという問題があった。A resistance heating evaporation method using a boat has been developed as a vacuum evaporation method that rarely generates such large gold balls. However, when using this heated vapor deposition method using a boat, there was a problem in that the throughput was low because a large amount of Au could not be evaporated at once.
【０００５】[0005]
【課題を解決するための手段】本発明は、上記の課題を
解決するためになされたものであり、従来の如きボート
を用いることなく新規構造の真空蒸着用るつぼを有する
半導体製造装置を提供することをその目的とする。すな
わち、本発明は以下の新規構造の真空蒸着用るつぼを用
いてＡｕ の真空蒸着を行いボールの発生がなくしかも
スループットの高いＡｕ 蒸着法により化合物半導体の
Ａｕ 薄膜を製作せんとするものである。[Means for Solving the Problems] The present invention has been made to solve the above problems, and provides a semiconductor manufacturing apparatus having a crucible for vacuum evaporation of a new structure without using a conventional boat. Its purpose is to That is, the present invention aims to perform vacuum evaporation of Au using a vacuum evaporation crucible having the following new structure, and to produce an Au thin film of a compound semiconductor by an Au evaporation method that does not generate balls and has a high throughput.
【０００６】本発明の真空蒸着用るつぼは、金をぬらす
物質の内側るつぼと金と反応しない物質の外側るつぼと
から成る二重構造のるつぼであって、該外側るつぼの垂
直方向の長さが該内側るつぼの垂直方向の長さよりも短
いことを特徴とする。このような本発明の真空蒸着用る
つぼにおいてるつぼを二重構造としたのは次の理由によ
る。ソースのＡｕ の漏洩を完全に防止するためである
。The crucible for vacuum deposition of the present invention has a double structure consisting of an inner crucible containing a substance that wets gold and an outer crucible containing a substance that does not react with gold, and the vertical length of the outer crucible is It is characterized by being shorter than the vertical length of the inner crucible. The reason why the crucible has a double structure in the vacuum deposition crucible of the present invention is as follows. This is to completely prevent leakage of the source Au.
【０００７】更に、内側るつぼの材料として特に金をよ
くぬらす物質を採用したのは、真空蒸発させる金属すな
わち金とのなじみを考慮したからである。このような材
料としては、例えばタングステン（Ｗ）等が好ましく用
いられる。しかし、Ａｕ とＷとでは熱膨張率が大きく
異なる。このためＷの内側るつぼにヒビに入るおそれが
ある。そこで、本発明では上記の如く、二重構造のるつ
ぼとしている。特に、外側るつぼはＡｕ と反応しない
物質、例えばパイロリティック窒化ホウ素（ＰＢＮ）
あるいはパイロリティックグラファイト（ＰＧ）等から
作成される。Furthermore, the reason why a substance that wets gold particularly well was adopted as the material for the inner crucible was in consideration of its compatibility with the metal to be vacuum evaporated, that is, gold. As such a material, for example, tungsten (W) or the like is preferably used. However, Au and W have significantly different coefficients of thermal expansion. For this reason, there is a risk of cracks forming in the inner crucible of W. Therefore, in the present invention, as described above, a double-structured crucible is used. In particular, the outer crucible is made of a material that does not react with Au, such as pyrolytic boron nitride (PBN).
Alternatively, it is made from pyrolytic graphite (PG) or the like.
【０００８】このように外側るつぼの材質としてＡｕ
と反応しない材質を採択したのは、仮に内側るつぼにヒ
ビが入ってＡｕ が外側るつぼに侵入しても外側るつぼ
に対してのヒビ割れの発生を防止し、該るつぼを貫通し
てＡｕが外部に漏洩することを好都合に防止するためで
ある。更に、外側るつぼの高さを内側るつぼのそれより
も低くしたのは、Ａｕ の蒸発を促すと共にＡｕ が内
側るつぼからはい上って外側に流れ出ることを防止する
ためである。[0008] In this way, Au is used as the material for the outer crucible.
The reason why we selected a material that does not react with the inner crucible is to prevent cracks from occurring in the outer crucible even if a crack occurs in the inner crucible and Au enters the outer crucible, and allows Au to pass through the crucible to the outside. This is to conveniently prevent leakage. Furthermore, the reason why the height of the outer crucible is made lower than that of the inner crucible is to promote the evaporation of Au and to prevent Au from climbing up from the inner crucible and flowing out to the outside.
【０００９】以下、更に本発明の一実施例を説明するが
、本発明がこれに限定されないことはもとよりである。An embodiment of the present invention will be further described below, but it goes without saying that the present invention is not limited thereto.
【００１０】0010
【実施例】タングスタンの粉体を焼結法により断面略コ
字状の内側るつぼ１を形成し、その後表面を研磨して仕
上げる。この内側るつぼの大きさは例えば内径２２ｍｍ
、外径２６ｍｍ、高さ４５ｍｍである。一方、パイロリ
ティック窒化ホウ素の粉体を用い、前記と同様に焼結法
により断面略コ字状の外側るつぼ２を形成する。この外
側るつぼの大きさは、例えば外径２９ｍｍ、高さ３５ｍ
ｍである。EXAMPLE An inner crucible 1 having a substantially U-shaped cross section is formed by sintering tungsten powder, and then the surface is polished and finished. The size of this inner crucible is, for example, an inner diameter of 22 mm.
, an outer diameter of 26 mm, and a height of 45 mm. On the other hand, using pyrolytic boron nitride powder, an outer crucible 2 having a substantially U-shaped cross section is formed by the same sintering method as described above. The size of this outer crucible is, for example, an outer diameter of 29 mm and a height of 35 m.
It is m.
【００１１】このように作成した外側るつぼ２内に内側
るつぼ１を互いに密着するように取りつけて真空蒸着用
るつぼＡを製作する。このように製作した真空蒸着用る
つぼを用いて ＵＬＶＡＣ社製の真空蒸着機にてウェハ
上にＡｕ 薄膜を作成した。得られたＡｕ 薄膜を検微
鏡にて観察したところ、電子ビームガンによって形成さ
れた薄膜に較べ薄膜上にはボール状の小球体は殆ど認め
られなかった。なお、薄膜形成の際の蒸着レートは５Å
／Ｓで厚さは３０００Åであった。A crucible A for vacuum evaporation is manufactured by attaching the inner crucible 1 to the outer crucible 2 thus prepared so as to be in close contact with each other. Using the vacuum evaporation crucible thus manufactured, an Au thin film was formed on a wafer using a vacuum evaporation machine manufactured by ULVAC. When the obtained Au thin film was observed using a microscope, it was found that almost no ball-shaped spherules were observed on the thin film compared to a thin film formed by an electron beam gun. Note that the evaporation rate during thin film formation was 5 Å.
/S and the thickness was 3000 Å.
【００１２】0012
【発明の効果】以上説明したように、本発明の真空蒸着
用るつぼはＡｕ に対して特性の異なる材質より作成し
た内側るつぼと外側るつぼから構成され、外側るつぼの
高さを内側るつぼの高さよりも短くするように構成され
るものであるから、ボール状の小球体が薄膜上に付着す
ることもない。このため、化合物半導体デバイスの使用
においてショートや断線の原因を除去することが可能と
なる。更に、本発明のるつぼは、二重構造であるため、
Ａｕ の漏洩を完全に防止することが可能となり、この
結果、るつぼの加熱手段やリフレクターの損傷を防止す
る効果を奏する。更にまた、内側るつぼの高さを外側る
つぼの高さよりも高くするように構成しているので、内
側るつぼの側壁からも内側るつぼの材質（例えばＷ）を
ぬらしたＡｕ の蒸発が促進される。このため、Ａｕ
の蒸発が等方状に行われウェハ上へのＡｕ 薄膜形成が
正精に行われることとなる。更にまた、ソースのＡｕ
が内側るつぼからはい上って外側に流れ出ることを防止
する効果も奏する。更に本発明のるつぼは、従来の如く
ボートを用いた抵抗加熱ではないので、ソース（Ａｕ）
をより多く充てんできる。このためスループットをはる
かに高いものにする効果を奏する。Effects of the Invention As explained above, the crucible for vacuum deposition of the present invention is composed of an inner crucible and an outer crucible made of materials having different properties for Au, and the height of the outer crucible is set higher than the height of the inner crucible. Since the thin film is configured to have a short length, there is no possibility that ball-shaped small spheres will adhere to the thin film. Therefore, it is possible to eliminate the causes of short circuits and disconnections when using compound semiconductor devices. Furthermore, since the crucible of the present invention has a double structure,
It becomes possible to completely prevent leakage of Au, and as a result, there is an effect of preventing damage to the crucible heating means and reflector. Furthermore, since the height of the inner crucible is configured to be higher than the height of the outer crucible, evaporation of Au that wets the material (for example, W) of the inner crucible is promoted from the side wall of the inner crucible. For this reason, Au
The evaporation of the Au thin film is performed isotropically, and the Au thin film is precisely formed on the wafer. Furthermore, the source Au
It also has the effect of preventing water from climbing up from the inner crucible and flowing out to the outside. Furthermore, since the crucible of the present invention does not use resistance heating using a boat as in the past,
can be filled with more. This has the effect of making the throughput much higher.
【図１】図１は本発明の一実施例を示す真空蒸着用るつ
ぼの断面図である。FIG. 1 is a sectional view of a crucible for vacuum deposition showing one embodiment of the present invention.
１…内側るつぼ ２…外側るつぼ Ａ…真空蒸着用るつぼ 1...Inner crucible 2...Outer crucible A... Crucible for vacuum evaporation
Claims (2)
応しない物質の外側るつぼとから成る二重構造のるつぼ
であって、該外側るつぼの垂直方向の長さが該内側るつ
ぼの垂直方向の長さよりも短い真空蒸着用るつぼを有す
ることを特徴とする半導体製造装置。1. A double-structured crucible comprising an inner crucible containing a substance that wets gold and an outer crucible containing a substance that does not react with gold, wherein the vertical length of the outer crucible is equal to the vertical length of the inner crucible. A semiconductor manufacturing device characterized by having a crucible for vacuum evaporation that is shorter than its length.
タングスタン製のるつぼであり、金と反応しない物質の
外側るつぼが、パイロリティック窒化ホウ素製のるつぼ
である請求項１記載の半導体製造装置。2. The inner crucible of the gold-wetting substance comprises:
2. The semiconductor manufacturing apparatus according to claim 1, wherein the crucible is made of tungsten, and the outer crucible made of a substance that does not react with gold is a crucible made of pyrolytic boron nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2459591A JPH04263065A (en) | 1991-02-19 | 1991-02-19 | Semiconductor producing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2459591A JPH04263065A (en) | 1991-02-19 | 1991-02-19 | Semiconductor producing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04263065A true JPH04263065A (en) | 1992-09-18 |
Family
ID=12142509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2459591A Withdrawn JPH04263065A (en) | 1991-02-19 | 1991-02-19 | Semiconductor producing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04263065A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100597923B1 (en) * | 2003-05-08 | 2006-07-13 | 산요덴키가부시키가이샤 | Vaporizing apparatus |
-
1991
- 1991-02-19 JP JP2459591A patent/JPH04263065A/en not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100597923B1 (en) * | 2003-05-08 | 2006-07-13 | 산요덴키가부시키가이샤 | Vaporizing apparatus |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Application deemed to be withdrawn because no request for examination was validly filed |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 19980514 |