JPH04250701A - Ridge waveguide-microwave integrated circuit connection structure - Google Patents
Ridge waveguide-microwave integrated circuit connection structureInfo
- Publication number
- JPH04250701A JPH04250701A JP2385991A JP2385991A JPH04250701A JP H04250701 A JPH04250701 A JP H04250701A JP 2385991 A JP2385991 A JP 2385991A JP 2385991 A JP2385991 A JP 2385991A JP H04250701 A JPH04250701 A JP H04250701A
- Authority
- JP
- Japan
- Prior art keywords
- ridge waveguide
- ridge
- microstrip line
- integrated circuit
- dielectric substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001939 inductive effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 230000005672 electromagnetic field Effects 0.000 claims description 4
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 239000004020 conductor Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
Landscapes
- Microwave Amplifiers (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、導波管からマイクロス
トリップ線路へ電磁界を伝播するリッジ導波管−マイク
ロ波集積回路接続構造に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ridge waveguide-microwave integrated circuit connection structure for propagating an electromagnetic field from a waveguide to a microstrip line.
【0002】0002
【従来の技術】マイクロ波集積回路(以下、MICとい
う)に導波管を接続する場合、Kバンド以上の周波数帯
ではリッジ導波管(ridge waveguide)
が良く用いられる。図4は従来のこの種の接続構造を
説明する斜視図、図5はその断面図で、各図において、
1はリッジ導波管、2はそのリッジ部、3はMICを構
成する誘電体基板、4はマイクロストリップ線路、5は
グランドプレーン(金属板)である。[Prior Art] When connecting a waveguide to a microwave integrated circuit (hereinafter referred to as MIC), a ridge waveguide is used in the K-band and higher frequency bands.
is often used. FIG. 4 is a perspective view illustrating a conventional connection structure of this type, and FIG. 5 is a sectional view thereof. In each figure,
1 is a ridge waveguide, 2 is a ridge portion thereof, 3 is a dielectric substrate constituting the MIC, 4 is a microstrip line, and 5 is a ground plane (metal plate).
【0003】また、図に示す記号a,bはそれぞれ導波
管1の幅および高さ、sはリッジ部2の幅、hは誘電体
基板3の厚さ、wはマイクロストリップ線路の幅を表す
。Further, symbols a and b shown in the figure are the width and height of the waveguide 1, s is the width of the ridge portion 2, h is the thickness of the dielectric substrate 3, and w is the width of the microstrip line. represent.
【0004】図4,図5に示すように、従来の接続構造
は、平坦な金属板であるグランドプレーン5上で、導波
管1の端部と誘電体基板3の端部とを接触させて接続し
ており、導波管1の電界分布がリッジ部2に集中する構
造となっているため、導波管1の特性をTEMモードに
近い特性とすることができ、TEMモードであるマイク
ロストリップ線路4へ電磁界を伝播している。As shown in FIGS. 4 and 5, in the conventional connection structure, the end of the waveguide 1 and the end of the dielectric substrate 3 are brought into contact with each other on a ground plane 5, which is a flat metal plate. Since the waveguide 1 has a structure in which the electric field distribution is concentrated on the ridge portion 2, the characteristics of the waveguide 1 can be made close to those in the TEM mode. An electromagnetic field is propagated to the strip line 4.
【0005】[0005]
【発明が解決しようとする課題】解決しようとする問題
点は、従来の接続構造では、リッジ幅とマイクロストリ
ップ線路幅が一致せず、良好な伝播特性が得られないと
いう点にある。すなわち、リッジ幅sは、誘電体基板3
の厚さhとマイクロストリップ線路4の特性インピーダ
ンスとによって決定されるため、図1に示す従来の接続
構造ではリッジ幅sとマイクロストリップ線路4の幅w
とを一致させることが難しく、この部分の幅が急変する
ことによって寄生容量が生じ、良好な特性が得られない
。The problem to be solved is that in the conventional connection structure, the ridge width and the microstrip line width do not match, and good propagation characteristics cannot be obtained. That is, the ridge width s is the dielectric substrate 3
is determined by the thickness h of the microstrip line 4 and the characteristic impedance of the microstrip line 4. Therefore, in the conventional connection structure shown in FIG.
It is difficult to match the width of this portion, and a sudden change in the width of this portion causes parasitic capacitance, making it difficult to obtain good characteristics.
【0006】また、リッジ部2とマイクロストリップ線
路4との接続は、金リボンやタブ等で行っているため、
接続が複雑になると共に再現性にも欠ける。[0006] Furthermore, since the connection between the ridge portion 2 and the microstrip line 4 is made using a gold ribbon, tab, etc.,
The connections become complicated and reproducibility is also lacking.
【0007】[0007]
【課題を解決するための手段】本発明は、誘電体基板を
支えるグランドプレーン上のリッジ導波管と誘電体基板
との接続部に段差を設けると共に、接続部近傍のマイク
ロストリップ線路上に誘導性スタブを設けたことを最も
主要な特徴とする。[Means for Solving the Problems] The present invention provides a step at the connection portion between the ridge waveguide and the dielectric substrate on the ground plane supporting the dielectric substrate, and also provides guidance on the microstrip line near the connection portion. The most important feature is the provision of a sex stub.
【0008】従って、リッジ幅とマイクロストリップ線
路の幅とを一致させることができ、マイクロストリップ
線路上に形成された誘導性回路によって寄生容量を相殺
し、高周波特性の良好な構造を得るという目的を、簡単
な構成で実現した。Therefore, the ridge width and the width of the microstrip line can be matched, and the inductive circuit formed on the microstrip line cancels out the parasitic capacitance, achieving the purpose of obtaining a structure with good high frequency characteristics. , achieved with a simple configuration.
【0009】[0009]
【実施例】図1は本発明の一実施例を示す斜視図、図2
はその断面図であって、各図において1はリッジ導波管
、2はそのリッジ部、3はMICを構成する誘電体基板
、4はマイクロストリップ線路、5はグランドプレーン
(金属板)、6はグランドプレーン5上に設けられた段
差を示す。[Embodiment] Fig. 1 is a perspective view showing one embodiment of the present invention, and Fig. 2
are cross-sectional views thereof, and in each figure, 1 is the ridge waveguide, 2 is the ridge portion, 3 is the dielectric substrate constituting the MIC, 4 is the microstrip line, 5 is the ground plane (metal plate), and 6 is the ridge waveguide. indicates a step provided on the ground plane 5.
【0010】また、図に示す記号a,bはそれぞれ導波
管1の幅および高さ、s1はリッジ部2の幅、hは誘電
体基板3の厚さ、h1はグランドプレーン5上から突き
出した誘電体基板3の突出部の高さを示す。Further, symbols a and b shown in the figure are respectively the width and height of the waveguide 1, s1 is the width of the ridge portion 2, h is the thickness of the dielectric substrate 3, and h1 is the protrusion from above the ground plane 5. The height of the protrusion of the dielectric substrate 3 is shown.
【0011】図1,図2に示すように、リッジ導波管1
と誘電体基板3とを支えているグランドプレーン5には
所定の高さの段差6が設けられており、この段差6によ
りグランドプレーン5の平面上から突き出す誘電体基板
3の高さをh1に押さえることができる。As shown in FIGS. 1 and 2, a ridge waveguide 1
The ground plane 5 supporting the dielectric substrate 3 is provided with a step 6 of a predetermined height, and this step 6 reduces the height of the dielectric substrate 3 protruding from the plane of the ground plane 5 to h1. It can be held down.
【0012】このため、誘電体基板3の実質上の厚さを
h1と薄くすることができ、従ってリッジ幅をs1と薄
くでき、段差6を所定の高さとすることによリ、リッジ
幅s1とマイクロストリップ線路4の幅wとを一致させ
ることができ、接続部における幅の急変(不連続)を緩
和させることができる。Therefore, the actual thickness of the dielectric substrate 3 can be reduced to h1, and the ridge width can therefore be reduced to s1.By setting the step 6 to a predetermined height, the ridge width can be reduced to s1. The width w of the microstrip line 4 can be made to match the width w of the microstrip line 4, and sudden changes (discontinuities) in the width at the connection portion can be alleviated.
【0013】また、段差6を設けることにより、リッジ
部2のリッジ面の高さとマイクロストリップ線路4の導
体面の高さとを一致させることができ、図1,図2に示
すように、リッジ部2のリッジ面でマイクロストリップ
線路4を押さえ、リッジ部2とマイクロストリップ線路
4との確実な接続が行える。Furthermore, by providing the step 6, the height of the ridge surface of the ridge portion 2 and the height of the conductor surface of the microstrip line 4 can be matched, and as shown in FIGS. The microstrip line 4 is held down by the ridge surface of the ridge part 2, and the ridge part 2 and the microstrip line 4 can be reliably connected.
【0014】図3は、実施例における誘電体基板3の平
面図であり、図において、7は誘導性スタブを示す。リ
ッジ導波管とマイクロ波集積回路とを接続させる構造で
は、リッジ導波管1からマイクロストリップ線路4に至
る電磁界の伝播において、その境界(接続)部における
段差および誘電率の不連続のため、等価的な並列容量が
生じる。FIG. 3 is a plan view of the dielectric substrate 3 in this embodiment, and in the figure, 7 indicates an inductive stub. In a structure that connects a ridge waveguide and a microwave integrated circuit, in the propagation of the electromagnetic field from the ridge waveguide 1 to the microstrip line 4, due to the step and discontinuity of permittivity at the boundary (connection) part. , resulting in an equivalent parallel capacitance.
【0015】従って本発明においては、境界部付近のマ
イクロストリップ線路4上に誘導性スタブ7を設け、生
じた並列容量を相殺し、特性の劣化を防止している。Therefore, in the present invention, an inductive stub 7 is provided on the microstrip line 4 near the boundary to cancel out the generated parallel capacitance and prevent deterioration of the characteristics.
【0016】[0016]
【発明の効果】以上説明したように本発明の接続構造は
、接続部に段差を設け、位置合わせを容易にすると共に
、リッジ面とマイクロストリップ線路の導体面,および
各々の幅を一致させ、不連続を緩和させて良好な特性を
得ることができ、段差および誘電率の相違による不連続
を接続部近傍に設けた誘導性スタブ回路によって極めて
小さくすることができるため、高周波特性の良好な接続
構造が得られるという利点がある。As explained above, the connection structure of the present invention provides a step at the connection part to facilitate alignment, and also matches the ridge surface and the conductor surface of the microstrip line, as well as their respective widths. Discontinuities can be alleviated and good characteristics can be obtained, and discontinuities caused by steps and differences in dielectric constant can be made extremely small by using an inductive stub circuit installed near the connection, resulting in connections with good high frequency characteristics. It has the advantage of providing structure.
【図1】本発明の一実施例を示す斜視図である。FIG. 1 is a perspective view showing an embodiment of the present invention.
【図2】本発明の一実施例を示す断面図である。FIG. 2 is a sectional view showing an embodiment of the present invention.
【図3】本発明の誘電体基板を示す平面図である。FIG. 3 is a plan view showing a dielectric substrate of the present invention.
【図4】従来の構造を示す斜視図である。FIG. 4 is a perspective view showing a conventional structure.
【図5】従来の構造を示す断面図である。FIG. 5 is a sectional view showing a conventional structure.
1 リッジ導波管 2 リッジ部 3 誘電体基板 4 マイクロストリップ線路 5 グランドプレーン(金属板) 6 段差 7 誘導性スタブ s1 リッジ部の幅 h 誘電体基板の厚さ h1 突出部の高さ 1 Ridge waveguide 2 Ridge part 3 Dielectric substrate 4 Microstrip line 5 Ground plane (metal plate) 6 Steps 7 Inductive stub s1 Width of ridge part h Thickness of dielectric substrate h1 Height of protrusion
Claims (1)
に形成されたマイクロストリップ線路を接続して電磁界
を伝播するリッジ導波管−マイクロ波集積回路接続構造
において、誘電体基板を支える金属板のリッジ導波管と
誘電体基板との接続部に段差を設けると共に、該接続部
近傍のマイクロストリップ線路上に誘導性スタブを設け
たことを特徴とするリッジ導波管−マイクロ波集積回路
接続構造。Claim 1: In a ridge waveguide-microwave integrated circuit connection structure in which an output part of a ridge waveguide is connected to a microstrip line formed on a dielectric substrate to propagate an electromagnetic field, the dielectric substrate is A ridge waveguide-microwave characterized in that a step is provided at the connection portion between the supporting ridge waveguide of the metal plate and the dielectric substrate, and an inductive stub is provided on the microstrip line near the connection portion. Integrated circuit connection structure.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2385991A JPH04250701A (en) | 1991-01-25 | 1991-01-25 | Ridge waveguide-microwave integrated circuit connection structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2385991A JPH04250701A (en) | 1991-01-25 | 1991-01-25 | Ridge waveguide-microwave integrated circuit connection structure |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04250701A true JPH04250701A (en) | 1992-09-07 |
Family
ID=12122167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2385991A Pending JPH04250701A (en) | 1991-01-25 | 1991-01-25 | Ridge waveguide-microwave integrated circuit connection structure |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04250701A (en) |
-
1991
- 1991-01-25 JP JP2385991A patent/JPH04250701A/en active Pending
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