JPH04246175A - Method for forming silicon oxide - Google Patents
Method for forming silicon oxideInfo
- Publication number
- JPH04246175A JPH04246175A JP1227491A JP1227491A JPH04246175A JP H04246175 A JPH04246175 A JP H04246175A JP 1227491 A JP1227491 A JP 1227491A JP 1227491 A JP1227491 A JP 1227491A JP H04246175 A JPH04246175 A JP H04246175A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon oxide
- oxide film
- water vapor
- hexamethyldisilazane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 10
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 230000001678 irradiating effect Effects 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 238000007599 discharging Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000007796 conventional method Methods 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000006303 photolysis reaction Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、半導体集積回路素子、
光学素子、微小検出素子、光電変換素子等の小型素子で
用いる酸化珪素膜の形成方法に関するものである。[Industrial Application Field] The present invention relates to semiconductor integrated circuit devices,
The present invention relates to a method for forming a silicon oxide film used in small devices such as optical devices, minute detection devices, and photoelectric conversion devices.
【０００２】0002
【従来の技術】従来、酸化珪素膜を形成する方法として
、被成膜体を気体状ヘキサメチルジシラザンと水蒸気を
同時に導入した減圧雰囲気に保持し、この状態で光子エ
ネルギーが４．５５ｅＶ乃至は８．２９ｅＶの光を部分
的、あるいは全面に照射して酸化珪素膜を形成していた
。BACKGROUND ART Conventionally, as a method for forming a silicon oxide film, an object to be film-formed is kept in a reduced pressure atmosphere into which gaseous hexamethyldisilazane and water vapor are simultaneously introduced, and in this state, the photon energy is 4.55 eV or more. A silicon oxide film was formed by irradiating a portion or the entire surface with 8.29 eV light.
【０００３】0003
【発明が解決しようとする課題】しかしながら、従来の
方法では成膜速度が速いため成膜厚の精密な決定が困難
であると同時に、原料分子の吸着量が数分子層以上と多
いため光解離反応の未反応分が発生し成膜した酸化珪素
膜中に炭素、水素の不純物が混入しやすいという欠点を
有していた。従って、従来法で得た酸化珪素膜で素子を
構成した場合、電気絶縁性などの電気的特性、透過率な
どの光学的特性などを低下あるいは、ばらつかせるとい
う欠点を有していた。[Problems to be Solved by the Invention] However, with the conventional method, it is difficult to accurately determine the film thickness because the film formation rate is high, and at the same time, the adsorption amount of raw material molecules is large, several molecular layers or more, so photodissociation is difficult. This method has the disadvantage that unreacted components are generated and impurities such as carbon and hydrogen are likely to be mixed into the formed silicon oxide film. Therefore, when an element is constructed using a silicon oxide film obtained by the conventional method, it has the disadvantage that electrical properties such as electrical insulation, optical properties such as transmittance, etc. are reduced or varied.
【０００４】0004
【課題を解決するための手段】前述の課題を解決するた
めに、本発明では水蒸気と気体状ヘキサメチルジシラザ
ンを同時に導入せず、これらを別々に導入することとし
、また、気相中の原料は高真空に排気排出し、表面層に
約１分子層の吸着層を形成させた状態で光子エネルギー
が４．５５ｅＶ乃至は８．２９ｅＶの光を照射すること
により酸化珪素膜を形成した。[Means for Solving the Problems] In order to solve the above-mentioned problems, in the present invention, water vapor and gaseous hexamethyldisilazane are not introduced at the same time, but are introduced separately. The raw material was evacuated to a high vacuum, and a silicon oxide film was formed by irradiating it with light having a photon energy of 4.55 eV to 8.29 eV while forming an adsorption layer of approximately one molecular layer on the surface layer.
【０００５】[0005]
【作用】周知のように気体状ヘキサメチルジシラザン雰
囲気中に保持された物質表面は、物質表面に吸着してい
た水酸基とヘキサメチルジシラザンの解離反応により酸
素、シリコン、メチル基で構成され、末端がメチル基で
覆われ表面は疎水性となる。またこの時、表面に吸着し
ていた水素原子、及びヘキサメチルジシラザン中の窒素
原子はアンモニアとして気化し真空容器外に排出される
。[Operation] As is well known, the surface of a substance held in a gaseous hexamethyldisilazane atmosphere is composed of oxygen, silicon, and methyl groups due to the dissociation reaction between the hydroxyl groups adsorbed on the substance surface and hexamethyldisilazane. The terminal ends are covered with methyl groups, making the surface hydrophobic. At this time, hydrogen atoms adsorbed on the surface and nitrogen atoms in hexamethyldisilazane are vaporized as ammonia and discharged outside the vacuum container.
【０００６】この状態で、表面に光子エネルギーが４．
５５ｅＶ乃至は８．２９ｅＶの光を照射すると、炭素と
水素の結合手、及びシリコンと炭素の結合手が光分解さ
れ余分な付着物質であるメチル基が脱離することは周知
のことである。本法では、まず真空層内に水蒸気の導入
後これを排気することにより、表面に単分子層の水酸基
を吸着させる、この後、気体状ヘキサメチルジシラザン
を導入後真空排気することにより、先に表面に吸着した
水酸基の数の３分の１に相当する量だけのヘキサメチル
ジシラザンが解離吸着するため、最終的には表面には、
表面に結合した酸素、該酸素に結合した珪素、及び珪素
に結合した３つのメチル基とからなる単分子層だけが表
面吸着した状態を得ることができるのである。In this state, the photon energy on the surface is 4.
It is well known that when irradiated with light of 55 eV to 8.29 eV, bonds between carbon and hydrogen and bonds between silicon and carbon are photolyzed and methyl groups, which are excess adhering substances, are removed. In this method, water vapor is first introduced into the vacuum layer and then evacuated to adsorb a monomolecular layer of hydroxyl groups on the surface.Then, gaseous hexamethyldisilazane is introduced and evacuated to remove the hydroxyl groups. As the amount of hexamethyldisilazane corresponding to one-third of the number of hydroxyl groups adsorbed on the surface is dissociated and adsorbed, the surface ultimately has the following properties:
Only a monomolecular layer consisting of oxygen bound to the surface, silicon bound to the oxygen, and three methyl groups bound to the silicon can be adsorbed on the surface.
【０００７】この状態で、表面に光子エネルギーが４．
５５ｅＶ乃至は８．２９ｅＶの光を照射することにより
、単分子層の酸素と珪素からなる表面が得られるのであ
る。従って、この一連のサイクルを繰り返すことにより
単分子層ずつの酸化珪素結合が形成されるため、同サイ
クル数により単分子層オーダーの成膜厚が決定可能とな
ったのである。In this state, the photon energy on the surface is 4.
By irradiating with light of 55 eV to 8.29 eV, a surface consisting of a monomolecular layer of oxygen and silicon can be obtained. Therefore, by repeating this series of cycles, silicon oxide bonds are formed in each monomolecular layer, so that the film thickness on the order of a monomolecular layer can be determined by the same number of cycles.
【０００８】さらに、光子エネルギーが４．５５ｅＶ乃
至は８．２９ｅＶの光の照射時に、気相中のヘキサメチ
ルジシラザンは真空排気されるため、未解離状態のヘキ
サメチルジシラザンが数分子層以上吸着することがない
ので、照射光が吸着層の下層部まで届かず、炭素、水素
等の光解離による脱離が発生できず、これらが不純物と
して膜中に混入するという従来法の欠点も無くなったの
である。Furthermore, when irradiated with light having a photon energy of 4.55 eV to 8.29 eV, hexamethyldisilazane in the gas phase is evacuated, so that undissociated hexamethyldisilazane forms several molecular layers or more. Since there is no adsorption, the irradiated light does not reach the lower layer of the adsorption layer, and desorption due to photodissociation of carbon, hydrogen, etc. cannot occur, and the disadvantages of conventional methods such as these entering the film as impurities are eliminated. It was.
【０００９】[0009]
【実施例】（実施例１）以下、本発明の実施例について
具体的に述べる。被成膜体として厚み６００μｍ、大き
さ２０ｍｍ角のＰ型シリコン（１００）単結晶基板を用
い、これを真空容器内に垂直に保持し、一度真空容器内
圧力を１０−８ｔｏｒｒまで減圧した。EXAMPLES (Example 1) Examples of the present invention will be specifically described below. A P-type silicon (100) single crystal substrate with a thickness of 600 μm and a size of 20 mm square was used as a film-forming object and was held vertically in a vacuum chamber, and the pressure inside the vacuum chamber was once reduced to 10 −8 torr.
【００１０】その後、該真空容器内に水蒸気をマスフロ
ーコントローラを介して毎分５０ｃｃ導入し、真空容器
内圧力を１ｔｏｒｒに１分間保持した後、該真空容器内
圧力を１０−６ｔｏｒｒまで排気した。その後、気体状
ヘキサメチルジシラザンをマスフローコントローラを介
して毎分２０ｃｃ導入し、真空容器内圧力を１ｔｏｒｒ
に１分間保持した後、該真空容器内圧力を１０−６ｔｏ
ｒｒまで排気した。この状態で、基板に直角に出力１Ｗ
で１５ｍｍ角の照射領域を持つＡｒＦエキシマレーザ光
を２０秒間照射した。以上の水蒸気導入から光照射まで
のサイクルを５００サイクル繰り返して酸化珪素膜を形
成した。[0010] Thereafter, 50 cc of water vapor per minute was introduced into the vacuum vessel via a mass flow controller, and the pressure inside the vacuum vessel was maintained at 1 torr for 1 minute, and then the pressure inside the vacuum vessel was evacuated to 10 -6 torr. Thereafter, gaseous hexamethyldisilazane was introduced at a rate of 20 cc per minute via a mass flow controller, and the pressure inside the vacuum vessel was adjusted to 1 torr.
After holding for 1 minute, the pressure inside the vacuum container was increased to 10-6 to
Exhausted to rr. In this state, output 1W perpendicular to the board.
ArF excimer laser light having an irradiation area of 15 mm square was irradiated for 20 seconds. The above cycle from introducing water vapor to irradiating light was repeated 500 times to form a silicon oxide film.
【００１１】このようにして得た酸化珪素膜を用い、フ
ォトエッチングプロセスを経て原子間力顕微鏡に用いる
カンチレバーを作製した。このようにして、５枚の基板
から得られたカンチレバーのバネ定数すなわち、先端に
加えた力とカンチレバーのたわみの比の、狙い値に対す
るばらつきを調べたところ、膜厚ばらつきの大きい従来
法の１５％に対して１．２％と十分の一以下に低減する
ことができた。（実施例２）被成膜体として厚み５００
μｍ、大きさ２０ｍｍ角のＰ型シリコン（１００）単結
晶基板を用い、これをスパッタ用真空容器内に保持し、
一度真空容器内圧力を１０−７ｔｏｒｒまで減圧した。Using the silicon oxide film thus obtained, a cantilever for use in an atomic force microscope was fabricated through a photo-etching process. In this way, we investigated the variation in the spring constant of the cantilever obtained from five substrates, that is, the ratio of the force applied to the tip to the cantilever deflection, with respect to the target value. %, it was able to be reduced to 1.2%, which is less than one-tenth of that. (Example 2) Thickness 500 as film-formed object
A P-type silicon (100) single crystal substrate of μm and 20 mm square is held in a vacuum chamber for sputtering,
The pressure inside the vacuum container was once reduced to 10-7 torr.
【００１２】その後、該真空容器内に水蒸気をマスフロ
ーコントローラを介して毎分５０ｃｃ導入し、真空容器
内圧力を２ｔｏｒｒに１分間保持した後、該真空容器内
圧力を１０−６ｔｏｒｒまで排気した。その後、気体状
ヘキサメチルジシラザンをマスフローコントローラを介
して毎分２０ｃｃ導入し、真空容器内圧力を２ｔｏｒｒ
に１分間保持した後、該真空容器内圧力を１０−６ｔｏ
ｒｒまで排気した。この状態で、基板に４５度の角度方
向から出力０．５Ｗで２０ｍｍ角の照射領域を持つＡｒ
Ｆエキシマレーザ光を２０秒間照射した。以上の水蒸気
導入から光照射までのサイクルを１０サイクル繰り返し
て酸化珪素膜を形成した。[0012] Thereafter, 50 cc of water vapor per minute was introduced into the vacuum vessel via a mass flow controller, and the pressure inside the vacuum vessel was maintained at 2 torr for 1 minute, and then the pressure inside the vacuum vessel was evacuated to 10 -6 torr. Thereafter, 20 cc/min of gaseous hexamethyldisilazane was introduced via a mass flow controller, and the pressure inside the vacuum vessel was adjusted to 2 torr.
After holding for 1 minute, the pressure inside the vacuum container was increased to 10-6 to
Exhausted to rr. In this state, Ar with an irradiation area of 20 mm square with an output of 0.5 W is applied to the substrate from an angle direction of 45 degrees.
F excimer laser light was irradiated for 20 seconds. The above cycle from introducing water vapor to irradiating light was repeated 10 times to form a silicon oxide film.
【００１３】このようにして得た酸化珪素膜を１つのス
ペーサ材料として用い、これと交互にスパッタリングに
より膜厚５ｎｍのタングステン膜を形成し、合計で４０
層の交互層からなるＸ線多層膜反射鏡を形成し、Ｘ線の
反射特性を調べた。周知のように該多層膜反射鏡では、
これを構成する層の膜厚のばらつきが小さい程高い反射
率が得られる。波長０．１５４ｎｍのＸ線に対して、従
来法により形成した酸化珪素膜層を有する多層膜反射鏡
の反射率と比較したところ、本法を用いて形成した酸化
珪素膜を有した多層膜反射鏡は、従来よりも８％も反射
率が向上することができた。（実施例３）被成膜体とし
て厚み６００μｍ、大きさ２０ｍｍ角のＰ型シリコン（
１００）単結晶基板を用い、これを真空容器内に垂直に
保持し、一度真空容器内圧力を１０−８ｔｏｒｒまで減
圧した。Using the silicon oxide film thus obtained as one spacer material, a tungsten film with a thickness of 5 nm was formed alternately with this by sputtering, making a total of 40 nm thick.
An X-ray multilayer film reflector consisting of alternating layers was formed, and the X-ray reflection characteristics were investigated. As is well known, in this multilayer film reflecting mirror,
The smaller the variation in film thickness of the layers constituting this, the higher the reflectance can be obtained. When comparing the reflectance of a multilayer mirror with a silicon oxide film layer formed using the conventional method for X-rays with a wavelength of 0.154 nm, it was found that the multilayer film reflectance with a silicon oxide film layer formed using this method The reflectance of the mirror was improved by 8% compared to conventional mirrors. (Example 3) The object to be coated was P-type silicon (600 μm thick and 20 mm square) (
100) A single crystal substrate was used and held vertically in a vacuum container, and the pressure inside the vacuum container was once reduced to 10 −8 torr.
【００１４】その後、該真空容器内に水蒸気をマスフロ
ーコントローラを介して毎分５０ｃｃ導入し、真空容器
内圧力を１ｔｏｒｒに１分間保持した後、該真空容器内
圧力を１０−６ｔｏｒｒまで排気した。その後、気体状
ヘキサメチルジシラザンをマスフローコントローラを介
して毎分２０ｃｃ導入し、真空容器内圧力を１ｔｏｒｒ
に１分間保持した後、該真空容器内圧力を１０−６ｔｏ
ｒｒまで排気した。この状態で、基板に直角に出力１Ｗ
で１５ｍｍ角の照射領域を持つＡｒＦエキシマレーザ光
を２０秒間照射した。以上の水蒸気導入から光照射まで
のサイクルを５０サイクル繰り返して酸化珪素膜を形成
した。[0014] Thereafter, 50 cc of water vapor per minute was introduced into the vacuum vessel via a mass flow controller, and the pressure inside the vacuum vessel was maintained at 1 torr for 1 minute, and then the pressure inside the vacuum vessel was evacuated to 10 -6 torr. Thereafter, gaseous hexamethyldisilazane was introduced at a rate of 20 cc per minute via a mass flow controller, and the pressure inside the vacuum vessel was adjusted to 1 torr.
After holding for 1 minute, the pressure inside the vacuum container was increased to 10-6 to
Exhausted to rr. In this state, output 1W perpendicular to the board.
ArF excimer laser light having an irradiation area of 15 mm square was irradiated for 20 seconds. The above cycle from introducing water vapor to irradiating light was repeated 50 times to form a silicon oxide film.
【００１５】このようにして得た酸化珪素膜に対して、
半導体集積回路の絶縁保護膜として重要な特性である比
抵抗を調べたところ、従来法で得た酸化珪素膜が５×１
０９ Ω・ｃｍであったのに対して、４×１０１１Ω・
ｃｍと２桁の向上が認められた。これらの膜に対して、
二次イオン質量分析、及び赤外吸収分析により膜中の炭
素、水素の混入量を調べたところ、本法で得た酸化珪素
膜の不純物濃度は、従来法の約５分の１と不純物の混入
が極端に少ないことが判った。For the silicon oxide film thus obtained,
When we investigated the specific resistance, which is an important property for an insulating protective film for semiconductor integrated circuits, we found that the silicon oxide film obtained by the conventional method had a
09 Ω・cm, while it was 4×1011 Ω・
A two-digit improvement was observed. For these membranes,
When the amount of carbon and hydrogen mixed into the film was investigated by secondary ion mass spectrometry and infrared absorption analysis, the impurity concentration of the silicon oxide film obtained by this method was about one-fifth that of the conventional method. It was found that contamination was extremely low.
【００１６】[0016]
【発明の効果】以上のように本発明は、従来法に比較し
、酸化珪素膜の成膜厚を精密に決定できると同時に高純
度な酸化珪素膜が得られる等画期的な効果がある。[Effects of the Invention] As described above, compared to conventional methods, the present invention has revolutionary effects such as being able to precisely determine the thickness of a silicon oxide film and at the same time obtaining a highly pure silicon oxide film. .
Claims (1)
気を一定時間導入したのち、該水蒸気を排気し、その後
、ヘキサメチルジシラザン蒸気を一定時間導入したのち
、該ヘキサメチルジシラザン蒸気を排気し、該被成膜体
に４．５５ｅＶ乃至は８．２９ｅＶの光を照射すること
を１サイクルとし、同サイクルを繰り返すことにより酸
化珪素膜を形成することを特徴とする酸化珪素膜の形成
方法。Claim 1: After introducing water vapor into a vacuum container holding the object to be film-formed for a certain period of time, the water vapor is evacuated, and then, after introducing hexamethyldisilazane vapor for a certain period of time, the hexamethyldisilazane vapor is A silicon oxide film characterized in that one cycle consists of evacuating and irradiating the film-forming object with light of 4.55 eV to 8.29 eV, and forming a silicon oxide film by repeating the same cycle. Formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03012274A JP3086926B2 (en) | 1991-02-01 | 1991-02-01 | Method for forming silicon oxide film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03012274A JP3086926B2 (en) | 1991-02-01 | 1991-02-01 | Method for forming silicon oxide film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04246175A true JPH04246175A (en) | 1992-09-02 |
| JP3086926B2 JP3086926B2 (en) | 2000-09-11 |
Family
ID=11800789
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03012274A Expired - Fee Related JP3086926B2 (en) | 1991-02-01 | 1991-02-01 | Method for forming silicon oxide film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3086926B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
| US5567661A (en) * | 1993-08-26 | 1996-10-22 | Fujitsu Limited | Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound |
| JP2006344659A (en) * | 2005-06-07 | 2006-12-21 | Toshiba Corp | Semiconductor device and its manufacturing method |
| JP2011124371A (en) * | 2009-12-10 | 2011-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Film forming method |
-
1991
- 1991-02-01 JP JP03012274A patent/JP3086926B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5304398A (en) * | 1993-06-03 | 1994-04-19 | Watkins Johnson Company | Chemical vapor deposition of silicon dioxide using hexamethyldisilazane |
| US5567661A (en) * | 1993-08-26 | 1996-10-22 | Fujitsu Limited | Formation of planarized insulating film by plasma-enhanced CVD of organic silicon compound |
| JP2006344659A (en) * | 2005-06-07 | 2006-12-21 | Toshiba Corp | Semiconductor device and its manufacturing method |
| JP2011124371A (en) * | 2009-12-10 | 2011-06-23 | Nippon Telegr & Teleph Corp <Ntt> | Film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3086926B2 (en) | 2000-09-11 |
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