JPH04240738A - Cleaning liquid for integrated circuit sealing element - Google Patents
Cleaning liquid for integrated circuit sealing elementInfo
- Publication number
- JPH04240738A JPH04240738A JP722391A JP722391A JPH04240738A JP H04240738 A JPH04240738 A JP H04240738A JP 722391 A JP722391 A JP 722391A JP 722391 A JP722391 A JP 722391A JP H04240738 A JPH04240738 A JP H04240738A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning liquid
- methyl
- integrated circuit
- sealing element
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 27
- 238000007789 sealing Methods 0.000 title claims abstract description 16
- 239000007788 liquid Substances 0.000 title claims abstract description 13
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 16
- 239000003513 alkali Substances 0.000 claims description 7
- 150000001340 alkali metals Chemical class 0.000 claims description 2
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims 1
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052802 copper Inorganic materials 0.000 abstract description 5
- 239000010949 copper Substances 0.000 abstract description 5
- 239000003822 epoxy resin Substances 0.000 abstract description 4
- 229920000647 polyepoxide Polymers 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract description 2
- 150000001342 alkaline earth metals Chemical class 0.000 abstract description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 2
- 239000002184 metal Substances 0.000 abstract description 2
- 239000000654 additive Substances 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 239000000565 sealant Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、集積回路用封止素子の
洗浄に用いられる洗浄液に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a cleaning liquid used for cleaning sealing elements for integrated circuits.
【０００２】0002
【従来の技術】集積回路製品は、集積回路封止素子（以
下「ＩＣ封止素子」と略すことがある）を加工すること
により製造される。また、ＩＣ封止素子は、一般に、銅
または銀等の導体基板にＩＣチップを接着させた後、Ｉ
Ｃチップ上の電極端子部と導体基板のリード端子間を金
属ワイヤーで接続したものを、金型内で封止剤を用いて
モルディングすることにより製造される。2. Description of the Related Art Integrated circuit products are manufactured by processing integrated circuit encapsulation elements (hereinafter sometimes abbreviated as "IC encapsulation elements"). Moreover, IC sealing elements are generally manufactured by bonding an IC chip to a conductive substrate such as copper or silver, and then
It is manufactured by molding the electrode terminals on the C chip and the lead terminals of the conductive substrate connected by metal wires in a mold using a sealant.
【０００３】従来、この場合の封止剤としては、通常、
エポキシ樹脂、及びこれにフェノール樹脂硬化剤等を配
合したものが用いられている。上記のＩＣ封止素子を製
造する場合、モルディング成形したままでは、成形時の
樹脂由来のバリが表面に残っているため、これを溶剤、
一般的には、Ｎ−メチル−２−ピロリドンを用いて洗浄
処理して、除去している。[0003] Conventionally, the sealant in this case is usually
Epoxy resins and mixtures of phenolic resin curing agents and the like are used. When manufacturing the above-mentioned IC sealing element, if the molding is performed as it is, burrs derived from the resin during molding remain on the surface, so these can be removed using a solvent or
Generally, it is removed by washing with N-methyl-2-pyrrolidone.
【０００４】0004
【発明が解決しようとする課題】しかしながら、従来の
処理方法ではバリの除去が完全とはいえず、導体基板と
して銅を用いた場合に付着物の除去が特に不十分である
という問題がある。However, conventional processing methods do not completely remove burrs, and when copper is used as the conductor substrate, there is a problem in that the removal of deposits is particularly insufficient.
【０００５】[0005]
【課題を解決するための手段】本発明者等は、上記の問
題点を解決すべく鋭意検討した結果、Ｎ−メチル−２−
ピロリドンにアルカリ化合物を特定量配合することによ
り、洗浄力が大幅に向上し、かつ基板上の腐食酸化等の
問題も生じないことを見い出し、本発明を完成するに至
った。[Means for Solving the Problems] As a result of intensive studies to solve the above problems, the present inventors have discovered that N-methyl-2-
The present inventors have discovered that by blending a specific amount of an alkali compound with pyrrolidone, the cleaning power is greatly improved and problems such as corrosion and oxidation on the substrate do not occur, leading to the completion of the present invention.
【０００６】即ち、本発明の要旨は、Ｎ−メチル−２−
ピロリドンに対してアルカリ化合物を１００〜３０００
ｐｐｍ配合して成る集積回路封止素子用洗浄液に存する
。That is, the gist of the present invention is that N-methyl-2-
100 to 3000 of alkaline compound to pyrrolidone
A cleaning liquid for integrated circuit sealing elements containing ppm.
【０００７】以下、本発明について詳細に説明する。本
発明に用いられるＮ−メチル−２−ピロリドンとしては
商業的に入手可能な製品であればよく、好ましくは純度
が９５％以上、特に好ましくは９８％以上である。製品
中の不純物（２−ピロリドン、水等）はかかる範囲内で
あれば本発明に影響はない。The present invention will be explained in detail below. The N-methyl-2-pyrrolidone used in the present invention may be any commercially available product, preferably having a purity of 95% or more, particularly preferably 98% or more. Impurities in the product (2-pyrrolidone, water, etc.) do not affect the present invention as long as they are within this range.
【０００８】また、Ｎ−メチル−２−ピロリドンに配合
するアルカリ化合物としては、アルカリ金属またはアル
カリ土類金属の水酸化物、炭酸塩、酢酸塩及びホウ酸塩
等のほか、有機アミン類が含まれるが、好ましくは、水
酸化ナトリウム、水酸化カリウム等のアルカリ金属、ま
たは水酸化カルシウム等のアルカリ土類金属の水酸化物
である。[0008]Alkali compounds to be added to N-methyl-2-pyrrolidone include hydroxides, carbonates, acetates, borates, etc. of alkali metals or alkaline earth metals, as well as organic amines. However, preferred are alkali metal hydroxides such as sodium hydroxide and potassium hydroxide, or alkaline earth metal hydroxides such as calcium hydroxide.
【０００９】本発明の洗浄液はＮ−メチル−２−ピロリ
ドン（少量の不純物も含めたＮ−メチル−２−ピロリド
ン溶剤全体）に対し、アルカリ化合物を１００〜３００
０ｐｐｍ、好ましくは３００〜１５００ｐｐｍ配合した
ものである。アルカリ化合物の配合量が上記範囲未満で
は洗浄効果の向上が不充分であり、また、上記範囲より
多いと導体基板が酸化されて着色するおそれがあり好ま
しくない。なお、アルカリ化合物が固体の場合、そのま
ま配合してもよいが、取り扱い上１〜５０重量％の水溶
液の形で配合するのが好ましい。The cleaning solution of the present invention has an alkali compound content of 100 to 300% of N-methyl-2-pyrrolidone (the entire N-methyl-2-pyrrolidone solvent including a small amount of impurities).
0 ppm, preferably 300 to 1500 ppm. If the amount of the alkali compound is less than the above range, the cleaning effect will not be improved sufficiently, and if it is more than the above range, the conductive substrate may be oxidized and colored, which is not preferable. If the alkaline compound is solid, it may be blended as is, but for handling reasons it is preferably blended in the form of an aqueous solution of 1 to 50% by weight.
【００１０】本発明の対象となるＩＣ封止素子とは、銅
または銀の導体基板にＩＣ素子をセットし、封止剤とし
てエポキシ樹脂を主体としたもので固定したものである
。本発明の洗浄液は、ＩＣ封止素子のバリ取り除去のみ
に限らず、封止剤のモルディングに用いられた金型内の
付着物の除去等にも使用することができる。The IC sealing element to which the present invention is applied is one in which an IC element is set on a conductive substrate of copper or silver, and fixed with a sealant mainly composed of epoxy resin. The cleaning liquid of the present invention can be used not only for removing burrs from IC sealing elements, but also for removing deposits inside a mold used for molding a sealant.
【００１１】本発明の洗浄液によるＩＣ封止素子のバリ
除去の処理方法は、上記ＩＣ封止素子を洗浄液と液接触
させる洗浄処理であれば特に制限はなく、例えば、噴霧
接触、シャワー接触、浸漬接触、超音波接触等があげら
れる。洗浄温度は、通常５０〜１５０℃、好ましくは８
０〜１４０℃、洗浄時間としては、通常３０秒〜２時間
、好ましくは１〜３０分で実施される。The method of removing burrs from an IC sealing element using the cleaning solution of the present invention is not particularly limited as long as the IC sealing element is brought into contact with the cleaning solution, such as spray contact, shower contact, or immersion. Examples include contact, ultrasonic contact, etc. The washing temperature is usually 50 to 150°C, preferably 8°C.
The cleaning time is usually 30 seconds to 2 hours, preferably 1 to 30 minutes.
【００１２】0012
【実施例】以下、実施例により本発明を更に詳細に説明
するが、本発明はその要旨を越えない限り以下の実施例
に限定されるものではない。EXAMPLES The present invention will be explained in more detail with reference to examples below, but the present invention is not limited to the following examples unless it exceeds the gist thereof.
【００１３】実施例１純度９９．８重量％のＮ−メチル
−２−ピロリドン１００重量部に対し、３．８重量％の
水酸化ナトリウム水溶液０．１重量部（Ｎ−メチル−２
−ピロリドンに対してＮａＯＨとして２００ｐｐｍ）を
添加し、１０分間攪拌して完全に溶解させて、本発明の
洗浄液を調製した。該洗浄液を１００℃に昇温し、これ
に銅の導体基板を用い、且つ封止剤としてエポキシ樹脂
を用いて得られたＩＣ封止素子を１０分間浸漬して洗浄
処理を行った。洗浄処理前後の上記ＩＣ封止素子付着物
の除去の程度について、光学顕微鏡を用いて観察し、バ
リ除去の程度を調査した結果を表１に示す。Example 1 To 100 parts by weight of N-methyl-2-pyrrolidone with a purity of 99.8% by weight, 0.1 part by weight of a 3.8% by weight aqueous sodium hydroxide solution (N-methyl-2-pyrrolidone)
- 200 ppm of NaOH relative to pyrrolidone) was added and stirred for 10 minutes to completely dissolve, thereby preparing the cleaning solution of the present invention. The temperature of the cleaning liquid was raised to 100° C., and an IC sealing element obtained by using a copper conductive substrate and an epoxy resin as a sealant was immersed in the cleaning liquid for 10 minutes to perform a cleaning treatment. Table 1 shows the results of observing with an optical microscope and examining the extent of burr removal before and after the cleaning treatment.
【００１４】表１において、洗浄後のＩＣ封止素子表面
の観察結果を以下の記号で示した。
○ … バリが除去されている。
△ … バリが残存している。
× … バリは除去されているが、表面が着色して
いる。In Table 1, the observation results of the surface of the IC sealing element after cleaning are shown by the following symbols. ○ ... Burrs have been removed. △...Flash remains. ×...The burr has been removed, but the surface is colored.
【００１５】実施例２〜９及び比較例１〜４実施例１に
おいて、アルカリの種類、使用量及び洗浄温度を表１の
ように変えた以外は実施例１と同様の試験を行った結果
を表１に示す。Examples 2 to 9 and Comparative Examples 1 to 4 The same tests as in Example 1 were conducted except that the type of alkali, the amount used, and the cleaning temperature were changed as shown in Table 1. It is shown in Table 1.
【００１６】比較例５〜６実施例１において洗浄液とし
て純度９９．８重量％のＮ−メチル−２−ピロクリドン
単独で用いたこと以外は実施例１と同様の試験を行った
結果を表１に示す。Comparative Examples 5 to 6 Table 1 shows the results of the same tests as in Example 1 except that N-methyl-2-pyrroclidone with a purity of 99.8% by weight was used alone as the cleaning liquid in Example 1. show.
【００１７】[0017]
【表１】[Table 1]
【００１８】[0018]
【発明の効果】本発明の洗浄液を用いることにより、集
積回路封止素子を効率よく洗浄することができる。[Effects of the Invention] By using the cleaning liquid of the present invention, integrated circuit sealing elements can be efficiently cleaned.
Claims (2)
アルカリ化合物を１００〜３０００ｐｐｍ配合して成る
集積回路封止素子用洗浄液。1. A cleaning liquid for integrated circuit sealing elements, which contains 100 to 3000 ppm of an alkali compound based on N-methyl-2-pyrrolidone.
ルカリ土類金属の水酸化物である請求項１記載の洗浄液
。2. The cleaning liquid according to claim 1, wherein the alkali compound is an alkali metal or alkaline earth metal hydroxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP722391A JP2836263B2 (en) | 1991-01-24 | 1991-01-24 | Cleaning liquid for integrated circuit sealing elements |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP722391A JP2836263B2 (en) | 1991-01-24 | 1991-01-24 | Cleaning liquid for integrated circuit sealing elements |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04240738A true JPH04240738A (en) | 1992-08-28 |
| JP2836263B2 JP2836263B2 (en) | 1998-12-14 |
Family
ID=11659997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP722391A Expired - Fee Related JP2836263B2 (en) | 1991-01-24 | 1991-01-24 | Cleaning liquid for integrated circuit sealing elements |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2836263B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442675B2 (en) | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
| JP2013008875A (en) * | 2011-06-24 | 2013-01-10 | Hitachi Chem Co Ltd | Opening method of semiconductor package and inspection method of semiconductor package |
| JP2013008874A (en) * | 2011-06-24 | 2013-01-10 | Hitachi Chem Co Ltd | Opening method of semiconductor package and inspection method of semiconductor package |
-
1991
- 1991-01-24 JP JP722391A patent/JP2836263B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7442675B2 (en) | 2003-06-18 | 2008-10-28 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning composition and method of cleaning semiconductor substrate |
| JP2013008875A (en) * | 2011-06-24 | 2013-01-10 | Hitachi Chem Co Ltd | Opening method of semiconductor package and inspection method of semiconductor package |
| JP2013008874A (en) * | 2011-06-24 | 2013-01-10 | Hitachi Chem Co Ltd | Opening method of semiconductor package and inspection method of semiconductor package |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2836263B2 (en) | 1998-12-14 |
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