JPH0422852A - In-irradiating plane distribution measuring instrument for electromagnetic wave/corpuscular beam - Google Patents

Abstract

PURPOSE:To directly and accurately measure two-dimensional intensity distribution by providing plural independent conductive areas on a substrate arranged at an irradiating plane, connecting each area to each current measuring instrument, and measuring in-plane distribution by the measured value of the current measuring instrument. CONSTITUTION:At a plane on which a sample is irradiated with an electromagnetic wave/corpuscular beam 1, the substrate 2 is placed instead of the sample. The plural independent conductive areas 3-1, 3-2 to 3-n are provided on the substrate 2 arranged at the irradiating plane, and the areas 3-1 to 3-n are connected to the current measuring instruments 4-1, 4-2 to 4-n. The conductive areas 3-1, 3-2 to 3-n emit secondary electrons when they are irradiated with the electromagnetic wave/corpuscular beam 1 such as x-rays. Therefore, since the current measuring instruments 4-1, 4-2 to 4-n show current values in accordance with emitted secondary electrons, it is possible to measure the distribution of the electromagnetic wave/corpuscular beam 1 on the irradiating plane in point of quantity when a current is measured at every area.

Description

[Detailed Description of the Invention] [Summary] Regarding a device that accurately measures the distribution of electromagnetic waves such as X-rays and particle beams within the irradiation surface and easily aligns the axis, the present invention relates to a current measuring device that measures the distribution within the irradiation surface. The purpose of this device is to provide a device that directly and accurately measures the two-dimensional distribution using electromagnetic waves and particle beams. Each independent conductive region is provided, each region is connected to a current measuring device, and the in-plane distribution is measured based on the measured value of the current measuring device.

[Technical field of invention]

The present invention relates to an apparatus that accurately measures the distribution of electron waves such as X-rays or particle beams within an irradiation surface and easily performs axis alignment.

In X-ray generators such as those used for X-ray analysis, the flux distribution within the irradiated surface is only measured qualitatively, and various methods are used to align the axis.
Observing the in-plane distribution was done independently, which took a long time and lacked accuracy. There was a request to develop a technology that could quantitatively measure the in-plane distribution and also enable axis alignment at the same time.

[Conventional technology]

BACKGROUND ART Equipment that uses X-ray generators, such as X-ray spectrometers and X-ray diffractometers, is diversifying. At this time, a so-called axis alignment is initially performed to confirm that the X-ray flux from the X-ray generator has reached a predetermined location within the irradiation surface, usually the center position of the surface. For axis alignment,
X-ray flux is irradiated onto a fluorescent screen or counted using a scintillation counter. By moving the slit or making the slit width variable, find out where the maximum value of X-rays reaches the sample, and then
Match that position with the center position of the sample. Furthermore, the X-rays diffracted and emitted from the sample are adjusted by moving the slit or making the slit width variable so that they can be counted to the maximum on the fluorescent screen or scintillation counter. Alternatively, in the case of an X-ray photoelectron spectrometer, especially when a monochromator is used as the excitation source, the analysis center position of the electron analyzer is determined in advance, and the position is set at the position where the maximum number of X-ray excited electrons can be counted. X so that the X-ray flux is irradiated
This is done by moving the radiation source and spectroscopic crystal.

[Invention or problem to be solved]

When using conventional scintillation counters and electron spectroscopy analyzers, the only way to measure the X-ray flux is to determine where on the irradiated surface the maximum value is reached, and the distribution within the irradiated surface is not measured. No measurements were taken.

Since the cross section of the X-ray flux on the sample surface is not necessarily a perfect circle, the intensity distribution once determined will naturally change if the flux conditions are changed. Therefore, if you can only measure slowly, the measurement will not be completed. On the other hand, when measuring by irradiating a fluorescent screen, is it possible to roughly observe the entire image within the irradiated surface by moving the slit rapidly? It cannot be measured. Furthermore, when a fluorescent screen is used, since fluorescence due to excited electrons is observed, the surface irradiated with X-rays and the surface of the fluorescent screen do not match, so the measurement is not accurate. Furthermore, when a fluorescent screen is used, it cannot emit light in the case of weak X-rays, and conversely, when a powerful X-ray source is used, problems with X-ray shielding arise. Since it is observed from a distance from the outside of the shield structure, it is likely to be inaccurate.

SUMMARY OF THE INVENTION An object of the present invention is to improve the above-mentioned drawbacks and to provide an apparatus for directly and accurately measuring the two-dimensional intensity distribution within the irradiated surface using a current measuring device.

[Means to solve the problem]

FIG. 1 is a diagram showing the basic configuration of the present invention. In Figure 1, ■ is an electromagnetic wave/particle beam, 2 is a substrate placed on the surface irradiated with electromagnetic waves, 3-1.3-2-...3-n is a conductive region, 4-1.4-2 -4-n indicates a current measuring device.

In an apparatus for measuring the in-plane distribution of a surface irradiated with electromagnetic waves/particle beams 1, the present invention has the following configuration. That is, a plurality of independent conductive regions 3-1, 3-2-, and 3-n are provided on the substrate 2 disposed within the irradiation surface, and each region 3-
I-3-n are each current measuring device 4-1.4-2-4-n
The in-plane distribution is measured by the measured values of the current measuring devices 4-1- and -4-n.

[Effect]

On the surface of the sample where the electromagnetic wave/particle beam 1 or the sample is irradiated,
Place the substrate 2 in place of the sample. The substrate 2 has conductive regions 3-1, 3-2-3-n, which emit secondary electrons when irradiated with electromagnetic waves such as X-rays or particle beams. Therefore, since the current measuring device 4-1.4-24-n indicates the current value corresponding to the emitted secondary electrons, when measuring the current in each region, it is possible to quantify the distribution within the irradiated surface of the electromagnetic wave/particle beam. It can be measured accurately.

〔Example〕

A specific example of the conductive region in FIG. 1 will be explained using a cross-sectional view in FIG. 2. As the substrate 2, for example, 2c
The substrate layer 2- is made of silicon and has a size of m square and a thickness of 0.5 mm.
Set to 1. 2-2 indicates a wiring layer for passing wiring between each conductive region and the corresponding ammeter connection terminal 5-1. The conductive region 3-1 is, for example, 100 μm square, and the distance 6-1 between adjacent regions is 50 μm. The peripheral portion 7-1 of each conductive region is surrounded by an insulating film (such as silicon oxide) having a thickness of 1 μm, for example. The conductive region 3-1 may be made of silver in order to emit many secondary electrons, and has a rectangular parallelepiped shape within the substrate layer 2-1. At this time, if the conductive regions 3-1 and the like are arranged regularly on the front surface of the substrate 2, it is effective to obtain a two-dimensional distribution on the surface of the substrate 2.

It is preferable to arrange a large number of conductive regions 3 with small areas as long as they can be connected to the ammeter 4.

This is because more accurate measurements can be made.

FIG. 3 is a diagram for explaining the situation when the conductive region 3-1 is irradiated with X-rays. In Figure 3, 1 is
4-1 is an ammeter, 5-1 is a connection terminal, 8 is a secondary electron, and 9 is a ground. When the conductive region 3-1 is irradiated with X-rays 1, secondary electrons 8 are emitted due to the photoelectric effect or the orthogonal process. Therefore, electrons reach the conductive region 3-1 from the ground 9 via the ammeter 4=1 and the terminal 5-1. According to experiments, the current value of the ammeter 4i was several μA.

According to the present invention, electromagnetic waves and particle beams other than X-rays can be used, and the material of the conductive region can be changed depending on the type of beam.

FIG. 4 is a wiring diagram when using a small number of ammeters. In Figure 4, 4 is an ammeter, 5-1゜5-2-6
-n indicates each connection terminal of the conductive region, and 10 indicates a changeover switch. By switching the changeover switch 10, the amount of X-ray irradiation in each conductive area can be measured separately.

FIG. 5 is a diagram showing an embodiment of the present invention including a device for processing current obtained from a conductive region.

In FIG. 5, 11 is an interface for ammeter measurement values, 12 is a processing device such as a personal computer, and 13 is a cathode ray tube (
CRT) display device. Ammeter 3-1.3-2 -・
The measured values 3-n are led to the personal computer 2 via the interface 1 and processed. The result is displayed as a two-dimensional grayscale display on the CRT 13, which can be viewed directly. If necessary, image processing is performed to add contrast, so an easy-to-see image can be easily obtained.

When the two-dimensional intensity distribution on the substrate is obtained, it is possible to know the situation such as the presence or absence of a slope of the flux of electromagnetic waves and particle beams. It is easy to match the position (usually the center position of the irradiation surface).

〔Effect of the invention〕

In this manner, according to the present invention, since the two-dimensional intensity distribution of electromagnetic waves/particle beam flux is directly measured as numerical values on the sample surface, it is possible to remove the conductive region and align the axis very easily.

Also, since the intensity distribution is known, it is possible to select a region where the optimum intensity can be obtained. In addition, it is possible to measure the intensity distribution without depending on the geometric structure of the device such as electromagnetic waves, and it is easy to avoid the effects of radiation exposure. Since the intensity distribution can be measured on the micron order, it is effective for application to the manufacturing process of large-scale integrated circuits.

[Brief explanation of drawings]

Fig. 1 is a diagram showing the principle configuration of the present invention, Fig. 2 is a diagram showing the configuration of a conductive region as an example of the present invention, Fig. 3 is an explanatory diagram of the operation of Fig. 2, and Fig. 4 is a diagram illustrating the present invention. FIG. 5 is a diagram showing a configuration including a current processing device as an example of the present invention. 1 - Electromagnetic wave/particle beam 2 - Substrate 3 - 1.3-2-3-n - Conductive region 4-1.4-2-4-n - Current measuring device Patent applicant
Fujitsu Ltd. Representative Patent Attorney Eisuke Suzuki Formerly covered particle t1 Wiring layer actual IN, m l

Claims (1)

[Claims] I. In an apparatus for measuring the in-plane distribution of a surface irradiated with electromagnetic waves/particle beams (1), a plurality of independent conductive Areas (3-1) (3-2)...(3-n) are provided, and each area (3-1)...(3-n) is equipped with a current measuring device (4-1) (4-n), respectively. 2)...Connected to (4-n),
An irradiation in-plane distribution measuring device characterized in that the in-plane distribution is measured by the measured values of the current measuring devices (4-1)...(4-n). II. An apparatus for measuring distribution within an irradiation surface, characterized in that the current measuring device according to claim I is configured by a switching device in which the number of conductive regions is smaller than the number of conductive regions. III. An irradiation surface distribution measuring device comprising a device into which each current from the conductive region according to claim I is input and displays each current simultaneously over the entire region.