JPH04221773A - Semiconductor acceleration sensor - Google Patents
Semiconductor acceleration sensorInfo
- Publication number
- JPH04221773A JPH04221773A JP2405457A JP40545790A JPH04221773A JP H04221773 A JPH04221773 A JP H04221773A JP 2405457 A JP2405457 A JP 2405457A JP 40545790 A JP40545790 A JP 40545790A JP H04221773 A JPH04221773 A JP H04221773A
- Authority
- JP
- Japan
- Prior art keywords
- acceleration sensor
- sensor element
- thick film
- film resistance
- cap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001133 acceleration Effects 0.000 title claims abstract description 50
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は半導体加速度センサの構
造に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a semiconductor acceleration sensor.
【０００２】0002
【従来の技術】図２は従来の半導体加速度センサの断面
図である。同図において、符号２で示すものは平板状に
形成された加速度センサ素子で中央部に薄肉状に形成さ
れた湾曲部３を有する。この加速度センサ素子２の先端
下面には加速度センサ素子２に加速度が加わったときに
、先端に加重が加わるように重り４が取付けられている
。そしてこの加速度センサ素子２はその基部が間隔材６
を介して基台１５に間隔を有して固定されている。セン
サ素子２の湾曲部３の背面には図示しないが湾曲部３の
変形量により抵抗値が変化する抵抗歪みゲージが取付け
られており、この抵抗値の変化はリード線９を通して電
気信号の変化としてリード１０から外部に引き出される
。加速度センサ２は基台１５に接着剤により取付けられ
たキャップ１１により覆われ密閉されて加速度センサパ
ッケージ７を構成している。2. Description of the Related Art FIG. 2 is a sectional view of a conventional semiconductor acceleration sensor. In the figure, the acceleration sensor element designated by reference numeral 2 is formed into a flat plate shape, and has a thin curved portion 3 in the center thereof. A weight 4 is attached to the lower surface of the tip of the acceleration sensor element 2 so as to apply weight to the tip when acceleration is applied to the acceleration sensor element 2. The base of this acceleration sensor element 2 is a spacer 6.
It is fixed to the base 15 with a gap therebetween. Although not shown, a resistance strain gauge whose resistance value changes depending on the amount of deformation of the curved part 3 of the sensor element 2 is attached to the back surface of the curved part 3 of the sensor element 2, and this change in resistance value is transmitted through the lead wire 9 as a change in an electrical signal. It is pulled out from the lead 10. The acceleration sensor 2 is covered and sealed with a cap 11 attached to a base 15 with an adhesive to form an acceleration sensor package 7.
【０００３】１２は加速度センサ素子の電気信号の変化
を増幅するＩＣでＩＣ１２の特性を調整する厚膜抵抗基
板２０の下面中央に搭載されて、ＩＣ１２とともにハイ
ブリッドＩＣ１３を構成している。１４は加速度センサ
パッケージ７とハイブリッドＩＣを実装する配線基板で
ある。２１はクリップリードで配線基板１４に植設され
、先端のクランプ部２２で厚膜抵抗基板２０の両端を把
持し、厚膜抵抗基板２０をパッケージ７の上方に固定し
ている。このように構成された半導体加速度センサは加
速度が加えられると加速度センサ素子２の計測部４が湾
曲して変形する。計測部４が変形すると、抵抗歪ゲージ
の抵抗値が変化し、変形量は電気信号の変化としてＩＣ
１２で増幅されて外部に出力される。Reference numeral 12 denotes an IC that amplifies changes in the electric signal of the acceleration sensor element, and is mounted at the center of the lower surface of a thick film resistor substrate 20 that adjusts the characteristics of the IC 12, and together with the IC 12 constitutes a hybrid IC 13. 14 is a wiring board on which the acceleration sensor package 7 and the hybrid IC are mounted. Reference numeral 21 is embedded in the wiring board 14 with a clip lead, and the clamp portion 22 at the tip grips both ends of the thick film resistor board 20 to fix the thick film resistor board 20 above the package 7 . In the semiconductor acceleration sensor configured in this way, when acceleration is applied, the measurement portion 4 of the acceleration sensor element 2 is bent and deformed. When the measurement unit 4 deforms, the resistance value of the resistance strain gauge changes, and the amount of deformation is expressed as a change in the electric signal by the IC.
12 and output to the outside.
【０００４】0004
【発明が解決しようとする課題】しかしながら、従来の
半導体加速度センサにおいては、センサ部を構成するパ
ッケージ部分とハイブリットＩＣ部分とが個別に構成さ
れているので、外形が大きくこのために実装スペースが
余分に必要となりまた実装作業も煩雑となる。本発明は
上述した点に鑑みなされたものであり、その目的とする
ところは実装スペースを余分に必要とせずにしかも実装
に手間がかからない半導体加速度センサを提供する。[Problems to be Solved by the Invention] However, in the conventional semiconductor acceleration sensor, the package part and the hybrid IC part that make up the sensor part are constructed separately, so the external size is large and this requires extra mounting space. In addition, the implementation work is also complicated. The present invention has been made in view of the above-mentioned points, and its purpose is to provide a semiconductor acceleration sensor that does not require extra mounting space and is easy to mount.
【０００５】[0005]
【課題を解決するための手段】本発明に係わる半導体加
速度センサは加速度センサ素子を固定する基台と、この
基台に取付けられて加速度センサ素子を密閉するキャッ
プと、加速度センサ素子からの電気信号を増幅するＩＣ
と、このＩＣを搭載してハイブリッドＩＣを構成する厚
膜抵抗基板とからなる半導体加速度センサにおいて、厚
膜抵抗基板上に加速度センサ素子を固定するとともに、
厚膜抵抗基板にキャップを取付けて加速度センサ素子と
ＩＣとを同封したものである。[Means for Solving the Problems] A semiconductor acceleration sensor according to the present invention includes a base for fixing an acceleration sensor element, a cap attached to the base to seal the acceleration sensor element, and an electrical signal from the acceleration sensor element. IC that amplifies
In a semiconductor acceleration sensor consisting of a thick film resistor substrate on which this IC is mounted and constitutes a hybrid IC, an acceleration sensor element is fixed on the thick film resistor substrate, and
A cap is attached to a thick film resistive substrate, and an acceleration sensor element and an IC are enclosed together.
【０００６】[0006]
【作用】本発明の半導体加速度センサにおいては厚膜抵
抗基板上に加速度センサ素子を固定して、厚膜抵抗基板
を加速度センサ素子を固定する基台として兼ねたもので
あるので、構造上小型化が図れ実装スペースを少なくす
ることができ、しかもコンパクト化により実装を容易に
行うことができる。[Operation] In the semiconductor acceleration sensor of the present invention, the acceleration sensor element is fixed on the thick film resistance substrate, and the thick film resistance substrate also serves as a base for fixing the acceleration sensor element, so it is structurally smaller. This makes it possible to reduce the mounting space, and furthermore, the compactness allows for easy mounting.
【０００７】[0007]
【実施例】以下図面に基づいて本発明を詳細に説明する
。図１は本発明に係る半導体加速度センサの断面図であ
る。同図において従来技術と同一の符号を付したものは
同一の構成を示すものであり、詳細な説明は省略する。
本発明の特徴とするところは、厚膜抵抗基板８の配設構
造にあり、この厚膜抵抗基板８の配設構造により加速度
センサパッケージとハイブリッドＩＣとを一体化したも
のである。すなわち、厚膜抵抗基板８は従来、基板１５
が配設されていた位置に配設されて基板１５と同一形状
に形成されている。そしてこの厚膜抵抗基板８上にはＩ
Ｃ１２と加速度センサ素子２が基台６を介して取付けら
れている。取付けられたＩＣと加速度センサ素子２の先
端との間隔は、加速度が加えられて湾曲部３が湾曲して
も先端がＩＣ１２に当接しないように設置されている。
キャップ１１はこの厚膜抵抗基板８に接着剤で固定され
ており、加速度センサ素子３およびＩＣ１２はこのキャ
ップ１１により密閉状態で同封される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be explained in detail below based on the drawings. FIG. 1 is a sectional view of a semiconductor acceleration sensor according to the present invention. In the figure, the same reference numerals as those in the prior art indicate the same configuration, and detailed explanation will be omitted. The feature of the present invention lies in the arrangement structure of the thick film resistance substrate 8, and the arrangement structure of the thick film resistance substrate 8 integrates the acceleration sensor package and the hybrid IC. That is, the thick film resistor substrate 8 has conventionally been used as the substrate 15.
It is disposed at the position where it was disposed and is formed in the same shape as the substrate 15. On this thick film resistor substrate 8, I
C12 and the acceleration sensor element 2 are attached via a base 6. The distance between the attached IC and the tip of the acceleration sensor element 2 is set so that the tip does not come into contact with the IC 12 even if the bending portion 3 is curved due to acceleration. The cap 11 is fixed to the thick film resistive substrate 8 with an adhesive, and the acceleration sensor element 3 and the IC 12 are hermetically enclosed by the cap 11.
【０００８】[0008]
【発明の効果】本発明によれば、従来加速度センサ素子
を搭載した基台の代わりにＩＣを搭載した厚膜抵抗基板
を配設してこの厚膜抵抗基板に加速度センサ素子をも固
定したものであるから、全体として小型化が図れて実装
スペースが小さくて済み、同時に従来必要としていたハ
イブリッドＩＣの取付作業が省略できて取付け作業は大
幅に簡易化される。また、ＩＣはキャップ内に密閉され
るので、加速度が加わった場合にも取付状態は堅牢に維
持されて安定的な出力が得られる。さらに、ＩＣの増幅
回路と加速度センサ素子からの電気信号とを厚膜抵抗基
板上で回路処理ができるため回路設計が簡易化される。[Effects of the Invention] According to the present invention, a thick film resistor board having an IC mounted thereon is disposed in place of the base on which the conventional acceleration sensor element is mounted, and the acceleration sensor element is also fixed to this thick film resistor board. Therefore, the overall size can be reduced and the mounting space can be reduced, and at the same time, the installation work of the hybrid IC, which was conventionally required, can be omitted, and the installation work can be greatly simplified. Moreover, since the IC is sealed within the cap, the mounted state is maintained robustly even when acceleration is applied, and stable output can be obtained. Furthermore, the circuit design can be simplified because the IC amplifier circuit and the electrical signals from the acceleration sensor element can be processed on the thick film resistive substrate.
【図面の簡単な説明】[Brief explanation of the drawing]
【図１】本発明の断面図である。FIG. 1 is a cross-sectional view of the present invention.
【図２】従来技術の断面図である。FIG. 2 is a cross-sectional view of the prior art.
２ 加速度センサ素子 ７ ハイブリッドＩＣ ８ 厚膜抵抗基板 １１ キャップ １２ ＩＣ １３ 加速度センサパッケージ １５ 基台 ２０ 厚膜抵抗基板 2 Acceleration sensor element 7 Hybrid IC 8 Thick film resistance board 11 Cap 12 IC 13 Acceleration sensor package 15 Base 20 Thick film resistance board
Claims (1)
この基台に取付けられて加速度センサ素子を密閉するキ
ャップと、加速度センサ素子からの電気信号を増幅する
ＩＣと、このＩＣを搭載してハイブリッドＩＣを構成す
る厚膜抵抗基板とからなる半導体加速度センサにおいて
、厚膜抵抗基板上に加速度センサ素子を固定するととも
に、厚膜抵抗基板にキャップを取付けて加速度センサ素
子とＩＣとを同封したことを特徴とする半導体加速度セ
ンサ。[Claim 1] A base for fixing an acceleration sensor element;
A semiconductor acceleration sensor consisting of a cap that is attached to this base and seals the acceleration sensor element, an IC that amplifies the electrical signal from the acceleration sensor element, and a thick film resistance substrate that mounts this IC and configures a hybrid IC. A semiconductor acceleration sensor characterized in that an acceleration sensor element is fixed on a thick film resistance substrate, and a cap is attached to the thick film resistance substrate to enclose the acceleration sensor element and an IC.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2405457A JPH04221773A (en) | 1990-12-25 | 1990-12-25 | Semiconductor acceleration sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2405457A JPH04221773A (en) | 1990-12-25 | 1990-12-25 | Semiconductor acceleration sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04221773A true JPH04221773A (en) | 1992-08-12 |
Family
ID=18515054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2405457A Pending JPH04221773A (en) | 1990-12-25 | 1990-12-25 | Semiconductor acceleration sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04221773A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01302169A (en) * | 1988-05-30 | 1989-12-06 | Mitsubishi Electric Corp | Breakage preventor for semiconductor acceleration sensor |
| JPH0228566A (en) * | 1988-05-03 | 1990-01-30 | Robert Bosch Gmbh | Acceleration detector |
| JPH0298669A (en) * | 1988-10-04 | 1990-04-11 | Fujikura Ltd | Semiconductor acceleration sensor |
-
1990
- 1990-12-25 JP JP2405457A patent/JPH04221773A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0228566A (en) * | 1988-05-03 | 1990-01-30 | Robert Bosch Gmbh | Acceleration detector |
| JPH01302169A (en) * | 1988-05-30 | 1989-12-06 | Mitsubishi Electric Corp | Breakage preventor for semiconductor acceleration sensor |
| JPH0298669A (en) * | 1988-10-04 | 1990-04-11 | Fujikura Ltd | Semiconductor acceleration sensor |
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