JPH0421564A - Alumina substrate, production of the same alumina substrate and wiring board using the same alumina substrate - Google Patents
Alumina substrate, production of the same alumina substrate and wiring board using the same alumina substrateInfo
- Publication number
- JPH0421564A JPH0421564A JP2164812A JP16481290A JPH0421564A JP H0421564 A JPH0421564 A JP H0421564A JP 2164812 A JP2164812 A JP 2164812A JP 16481290 A JP16481290 A JP 16481290A JP H0421564 A JPH0421564 A JP H0421564A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- zirconia
- alumina
- alumina substrate
- stabilizer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000843 powder Substances 0.000 claims abstract description 46
- 239000003381 stabilizer Substances 0.000 claims abstract description 16
- 239000011230 binding agent Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 9
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000004014 plasticizer Substances 0.000 claims abstract description 7
- 238000010304 firing Methods 0.000 claims description 10
- 238000000465 moulding Methods 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 6
- 239000000203 mixture Substances 0.000 abstract description 3
- 239000011369 resultant mixture Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 25
- 238000000034 method Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 230000003746 surface roughness Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 230000035939 shock Effects 0.000 description 3
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005187 foaming Methods 0.000 description 2
- YIWGJFPJRAEKMK-UHFFFAOYSA-N 1-(2H-benzotriazol-5-yl)-3-methyl-8-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carbonyl]-1,3,8-triazaspiro[4.5]decane-2,4-dione Chemical group CN1C(=O)N(c2ccc3n[nH]nc3c2)C2(CCN(CC2)C(=O)c2cnc(NCc3cccc(OC(F)(F)F)c3)nc2)C1=O YIWGJFPJRAEKMK-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明は、アルミナ基板、#アルミナ基板の製造法及び
該アルミナ基板を用いた配線板に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an alumina substrate, a method for manufacturing an #alumina substrate, and a wiring board using the alumina substrate.
(従来の技術)
ガラス成分及び金属導体粉を表面に塗布して焼付けたり
、蒸着する等の方法で表面に導体回路を形成する配線板
用の基板としてアルミナが多く用いられている。配線板
用の基板は表面が平滑なほどよいので、そのためアルミ
ナ結晶を微細化する必要がある。しかしアルミナは焼成
温度等の製造条件により結晶寸法が変り易いので、配線
板用の基板の製造には、原料や化学組成を含めて多大の
努力がはられれている。通常アルミナ基板を製造する場
合は、平均粒径0.3〜3μmのアルミナ粉に焼結助剤
として高温でガラス化する8i0.、 MgO。(Prior Art) Alumina is often used as a substrate for wiring boards on which conductor circuits are formed by applying a glass component and metal conductor powder to the surface and baking or vapor depositing. The smoother the surface of the substrate for wiring boards, the better, so it is necessary to make the alumina crystals finer. However, the crystal size of alumina tends to change depending on manufacturing conditions such as firing temperature, so a great deal of effort is put into manufacturing substrates for wiring boards, including the raw materials and chemical composition. Normally, when manufacturing alumina substrates, 8i0. , MgO.
CaO等を合計0.1〜5重量%添加し、更に有機結合
剤、可塑剤1分散剤、溶媒等を加えて混合、脱泡してフ
ィルム上に流し出し、乾燥してグリーンテープとし、こ
れを焼成する方法がとられる。配線板の回路の集積度が
高く々るに従い、使用する基板はより平滑であり、欠陥
がないことが要求されて来ている。この要求を達成する
ため、平均粒径0.1μm以下のアルミナ微粉に微量の
MgO。A total of 0.1 to 5% by weight of CaO, etc. is added, and an organic binder, a plasticizer, a dispersant, a solvent, etc. are added, mixed, defoamed, poured onto a film, and dried to form a green tape. A method of firing is used. As the degree of integration of circuits on wiring boards increases, the substrates used are required to be smoother and free from defects. To achieve this requirement, a trace amount of MgO is added to fine alumina powder with an average particle size of 0.1 μm or less.
5i02等を添加して粒子成長を抑制し、出来る限り低
い温度で焼成し、必要に応じ研摩する方法がとられてい
る。このような微粒アルミナからなる基板は、研摩など
の加工によって生じる粒子の脱落痕も無視できるほど小
さいので、微細な回路において断線や短絡の恐れがなく
望ましいとされている。The method used is to suppress grain growth by adding 5i02 or the like, sintering at the lowest possible temperature, and polishing as necessary. A substrate made of such fine-grained alumina is so small that traces of falling particles caused by processing such as polishing can be ignored, so it is considered desirable because there is no risk of disconnection or short circuit in minute circuits.
(発明が解決しようとする課題)
しかしながら、このような微粒で高純度のアルミナ基板
は、原料アルミナ粉に微粉を使う必要上多量の有機結合
剤及び溶媒を添加するため、テープ成形が困難であり、
結合剤除去工程で発泡9割れを生じ易く、更に焼成で粒
子成長を進めないように焼結させる温度条件設定や管理
を原料アルミナごとに調整しなければならないなど、製
造上多大の困難さを伴い、極めて高価なものとなってい
る。(Problem to be Solved by the Invention) However, it is difficult to tape-form such a fine-grained, high-purity alumina substrate because a large amount of organic binder and solvent are added to the raw material alumina powder, which requires the use of fine powder. ,
The process of removing the binder tends to cause foaming and cracking, and the temperature conditions for sintering and management must be adjusted for each raw material alumina to prevent further particle growth during sintering, making it extremely difficult to manufacture. , which is extremely expensive.
本発明は上記した問題を解決し9表面平滑性に優れ、か
つ機械的な強度や耐熱衝撃にも優れるアルミナ基板、該
アルミナ基板の容易かつ安価な製造法及び該アルミナ基
板を用いた配線板を提供することを目的とする。The present invention solves the above problems and provides an alumina substrate with excellent surface smoothness, mechanical strength and thermal shock resistance, an easy and inexpensive manufacturing method for the alumina substrate, and a wiring board using the alumina substrate. The purpose is to provide.
(!1題を解決するための手段)
本発明者らは1表面平滑性に優れるアルミナ基板を探索
した結果、アルミナ粉にジルコニア粉ヲ添加すると表面
平滑性が改善され、ま念簡単な研摩でも粒子の脱落等の
欠陥がなくなることを見い出り、更にジルコニアの添加
率、ジルコニアの安定化剤の糧類及び該安定化剤の添加
率、アルミナ粉等の原料粉粒径などについて検討を加え
9本発明に到達したものである。(Means for Solving Problem 1) As a result of searching for alumina substrates with excellent surface smoothness, the present inventors found that adding zirconia powder to alumina powder improved surface smoothness, even with simple polishing. It was discovered that defects such as falling particles were eliminated, and further studies were conducted on the addition rate of zirconia, the amount of zirconia stabilizer and the addition rate of the stabilizer, and the particle size of raw material powder such as alumina powder. In addition, the present invention has been achieved.
本発明は、(1)平均結晶粒径が5μm以下のアルミナ
60〜90重量部と正方晶相が80チ以上のジルコニア
及びジルコニアの安定化剤10〜40重量部とを含有す
るアルミナ基板、(2)アルミナ粉60〜90重量部、
ジルコニア粉及びジルコニアの安定化剤粉10〜40重
量部、有機結合剤並びに溶剤を混合し、成形及び焼成す
る。更には焼成後表面を研摩する核アルミナ基板の製造
法、(3)該アルミナ基板を用いた配線板に関する。The present invention provides (1) an alumina substrate containing 60 to 90 parts by weight of alumina with an average crystal grain size of 5 μm or less and 10 to 40 parts by weight of zirconia with a tetragonal phase of 80 or more and a zirconia stabilizer; 2) 60 to 90 parts by weight of alumina powder,
Zirconia powder, 10 to 40 parts by weight of zirconia stabilizer powder, an organic binder, and a solvent are mixed, then molded and fired. The present invention further relates to a method for producing a nuclear alumina substrate in which the surface is polished after firing, and (3) a wiring board using the alumina substrate.
本発明において、原料のアルミナ粉が60重量部未満で
かつジルコニア粉及びジルコニアの安定化剤粉が40重
量部を越えると得られるアルミナ基板の熱伝導率が低下
したり、熱膨張率が増大して使用困難となる。一方、ア
ルミナ粉が90重量部を越えかつジルコニア粉及びジル
コニアの安定化剤粉が10重量部未満であるとアルはす
の粒子が成長し易くなり、また焼結が困難になるため焼
成治具が劣化する。アルミナ基板中のアルミナの平均結
晶粒径は平滑な表面を得るために5μm以下が必要とさ
れ、3μm以下であれば表面粗さが0.15μm Ra
以下となり好ましい。平滑な表面の基板を得るために使
用するアルミナ粉は通常のアルミナ基板の製造に用いる
ものでよく平均粒径は0.3〜25μmがテープ成形も
し易く好ましい。In the present invention, if the raw material alumina powder is less than 60 parts by weight and the zirconia powder and zirconia stabilizer powder exceeds 40 parts by weight, the thermal conductivity of the resulting alumina substrate will decrease or the coefficient of thermal expansion will increase. This makes it difficult to use. On the other hand, if the amount of alumina powder exceeds 90 parts by weight and the amount of zirconia powder and zirconia stabilizer powder is less than 10 parts by weight, Al lotus particles will easily grow and sintering will become difficult. deteriorates. The average crystal grain size of alumina in the alumina substrate needs to be 5 μm or less to obtain a smooth surface, and if it is 3 μm or less, the surface roughness is 0.15 μm Ra
The following is preferable. The alumina powder used to obtain a substrate with a smooth surface may be one used in the manufacture of ordinary alumina substrates, and an average particle size of 0.3 to 25 .mu.m is preferable because tape molding is facilitated.
粒子が小さすぎると焼成で発泡や亀裂が発生し大きすぎ
ると基板の表面が粗くなる。より好ましくは0.3〜z
Oμmである。If the particles are too small, foaming or cracking will occur during firing, and if the particles are too large, the surface of the substrate will become rough. More preferably 0.3~z
It is Oμm.
アルミナ基板中のジルコニア結晶は正方晶相が8oチ以
上とされる。80チ未満では配線板等に使用中に劣化し
易く、耐熱衝撃性も不充分である。The zirconia crystal in the alumina substrate has a tetragonal phase of 8° or more. If it is less than 80 inches, it will easily deteriorate during use in wiring boards, etc., and its thermal shock resistance will be insufficient.
ジルコニア結晶を正方晶相にするための安定化剤として
は、希土類元素の酸化物特に酸化セリウム(Ce O2
)が好ましく、その添加量はジルコニア(Zr02)及
びZrO,中に必然的に混入するHfO。As a stabilizer for making the zirconia crystal into a tetragonal phase, oxides of rare earth elements, especially cerium oxide (CeO2
) is preferable, and the added amounts are zirconia (Zr02) and ZrO, and HfO which is inevitably mixed in.
量の合計に対し3〜20モルチが好ましい。CeO2は
粉体の状態で添加しても焼成途中でZrO2に固溶され
易いため、事前にジルコニアに固溶させる処理が不要で
ある。CeO2はまた正方晶ZrO,に熱的安定性を与
え、厚膜ペーストの焼付け、半田付は及び機器に組込ま
れて使用される際の高温多湿な条件下で耐久性を与える
。CeO,の添加量が少ないとYx Os等の他の希土
類元素の酸化物を加えても効果が小さく、多すぎると焼
成中にZrO2結晶が成長し易くなシ研摩後の表面平滑
性が低下する。3〜10モルチ添加の場合はY、0.、
sm、o、。3 to 20 mole based on the total amount is preferred. Even if CeO2 is added in the form of a powder, it is easily dissolved in ZrO2 during firing, so there is no need to pre-dissolve it in zirconia. CeO2 also provides thermal stability to the tetragonal ZrO, making it durable under hot and humid conditions during thick film paste baking, soldering, and use in equipment. If the amount of CeO added is small, the effect will be small even if oxides of other rare earth elements such as YxOs are added, and if it is too large, ZrO2 crystals will easily grow during firing and the surface smoothness after polishing will decrease. . When adding 3 to 10 moles, Y, 0. ,
sm,o,.
Gd、03等の他の希土類元素の酸化物との併用が好ま
しい。10〜20モルチではCeO,単独の添加で効果
が得られる。ZrO□粉及びzro、■安定化剤粉の平
均粒径は0.3〜1.5μmが好ましい。It is preferable to use it in combination with oxides of other rare earth elements such as Gd and 03. At 10 to 20 molty, the effect can be obtained by adding CeO alone. The average particle diameter of the ZrO □ powder and the zro, ① stabilizer powder is preferably 0.3 to 1.5 μm.
粒子が小さすぎるとテープ成形が困難となり、大きすぎ
ると焼結し難くなり、かつ表面粗さも大きくなる。この
ZrO2,安定化剤及び前記したアルミナ(Autos
)の平均粒径とは一次粒子の径を言い。If the particles are too small, it will be difficult to form the tape, and if the particles are too large, it will be difficult to sinter and the surface roughness will increase. This ZrO2, a stabilizer, and the above-mentioned alumina (Autos
) refers to the diameter of the primary particles.
比表面積で10 m”/ g以上を示すような超微粒子
の粉体は二次粒子を多く含み好ましくない。Ultrafine powder having a specific surface area of 10 m''/g or more is undesirable because it contains a large amount of secondary particles.
本アルミナ基板の製造において、原料の混合。In the production of this alumina substrate, raw materials are mixed.
成形及び焼成は公知の方法による。成形はテープ成形法
が好ましい。Molding and firing are performed by known methods. A tape molding method is preferable for molding.
配線板は、前記アルミナ基板に公知の方法によシ配線し
て得られる。The wiring board is obtained by wiring the alumina substrate by a known method.
(実施例) 次に本発明の詳細な説明する。(Example) Next, the present invention will be explained in detail.
実施例1
ボールミルに、 A7203粉〔昭和電工製A/−16
O−8G−1(平均粒径0.4μm)、同社製Aj−4
5−1(平均粒径1.8μm)又は住友化学製ALM−
44(平均粒径3.0 μm))、 ZrO,粉(第−
希元素工業製5pz)を平均粒径1.1μm又は0.5
μmに粉砕し念もの、Coo、(日産希元素化学製、純
度99.9チ)を平均粒径0.5μmに粉砕したもの。Example 1 In a ball mill, A7203 powder [A/-16 manufactured by Showa Denko
O-8G-1 (average particle size 0.4 μm), Aj-4 manufactured by the same company
5-1 (average particle size 1.8 μm) or Sumitomo Chemical ALM-
44 (average particle size 3.0 μm)), ZrO, powder (No.
5pz) made by Kigensu Kogyo) with an average particle size of 1.1 μm or 0.5
Coo (manufactured by Nissan Kigenso Kagaku, purity 99.9cm) was ground to an average particle size of 0.5 μm.
Y、0.粉(三菱化成工業製、純度99.9チ)を平均
粒径0.3μmに粉砕し念もの及びGd2O3粉(三菱
化成工業製、純度99.99%)を平均粒径0.3μm
に粉砕したものを第1表に示す値に秤量してから投入し
、更に有機結合剤としてブチラール樹脂(積木化学製)
、可塑剤としてジオクチルフタレート(試薬)及び溶剤
としてブタノールを入れ湿式混合し、真空脱泡後マイラ
ーフィルム上に流し出し1次いで熱風乾燥してグリーン
テープを得た。Y, 0. Powder (manufactured by Mitsubishi Chemical Industries, purity 99.9%) was ground to an average particle size of 0.3 μm, and Gd2O3 powder (manufactured by Mitsubishi Chemical Industries, purity 99.99%) was ground to an average particle size of 0.3 μm.
The crushed material was weighed to the value shown in Table 1 before being added, and butyral resin (manufactured by Block Chemical Co., Ltd.) was added as an organic binder.
Dioctyl phthalate (reagent) as a plasticizer and butanol as a solvent were wet-mixed, and after vacuum defoaming, the mixture was poured onto a Mylar film and then dried with hot air to obtain a green tape.
このテープを第1表に示す温度で焼成して30×70X
1(mm)のアルミナ基板を得、密度が最大になった温
度での表面粗さ、 Altosの結晶寸法、正方晶Zr
O,比率0曲げ強さを測定した。This tape was fired at the temperature shown in Table 1 to form a 30x70x
1 (mm) alumina substrate was obtained, and the surface roughness at the temperature at which the density was maximized, the crystal size of Altos, and the tetragonal Zr
O, ratio 0 bending strength was measured.
これを第1表に示す。This is shown in Table 1.
比較例1
実施例IKおけるZrO2粉を平均粒径0.08μmに
粉砕したものに実施例1におけるY2O3を3モルチ含
有するように添加してボールミルに入れ、以下実施例1
と同様にして有機結合剤、可塑剤及び溶剤を加えて湿式
混合後テープ成形したが成形できなかった(第1表の試
料NQ9)。Comparative Example 1 The ZrO2 powder in Example IK was pulverized to an average particle size of 0.08 μm, and the Y2O3 in Example 1 was added to contain 3 molt and placed in a ball mill.
In the same manner as above, an organic binder, a plasticizer, and a solvent were added, and after wet mixing, tape molding was performed, but the tape could not be molded (Sample NQ9 in Table 1).
比較例2及び比較例3
実施例1における平均粒径0.4μmのA/、O,粉9
9重量部及び平均粒径1.0μmのSin、粉(関東化
学制のケイ砂)1重量部とをボールミルに入れ、以下実
施例1と同様にして有機結合剤、可塑剤及び溶剤を加え
て湿式混合後テープ成形したところ多数の亀裂を発生し
た。成形品の中から亀裂のないものを選び、第1表の試
料NQIO及び11に示す焼成条件で焼成して実施例と
同寸法のアルミナ基板を得、基板の表面粗さ、 AI!
20.の結晶寸法及び曲げ強さを測定して第1表に示し
た。Comparative Example 2 and Comparative Example 3 A/, O, powder 9 with an average particle size of 0.4 μm in Example 1
9 parts by weight of Sin with an average particle size of 1.0 μm, and 1 part by weight of powder (silica sand manufactured by Kanto Chemical Industry) were placed in a ball mill, and an organic binder, a plasticizer, and a solvent were added in the same manner as in Example 1. When the tape was molded after wet mixing, many cracks occurred. A crack-free molded product was selected and fired under the firing conditions shown in Samples NQIO and 11 in Table 1 to obtain an alumina substrate with the same dimensions as the example, and the surface roughness of the substrate, AI!
20. The crystal size and bending strength of the sample were measured and shown in Table 1.
第1表から本発明のアルミナ基板は表面粗さが小さく(
表面平滑性がよく)9曲げ強さが大きいことが示される
。ただし、試料魔lは各原料粉がいずれも微粉を用いた
組合せであるので、テープ成形に難があった。Table 1 shows that the alumina substrate of the present invention has a small surface roughness (
Good surface smoothness) 9 High bending strength. However, since Sample 1 was a combination of raw material powders all using fine powders, tape molding was difficult.
実施例2
第1表のアルミナ基板を400番のレジンボンドのダイ
ヤモンド砥石で表面研磨し、その表面粗さ(μmRa)
を測定した。その結果を第2表に示す。Example 2 The surface of the alumina substrate shown in Table 1 was polished with a No. 400 resin-bonded diamond grindstone, and the surface roughness (μmRa)
was measured. The results are shown in Table 2.
第2表
第1表の試料Nn7.?!111.第2表の&7’及び
NQ 11’の基板に鋼ペーストを焼付け、感光性膜を
塗布形成後感光し1次いでエツチングして線間線幅50
μm150μmの微細配aを形成した配線板を得た。こ
の4穐の配線板各100個について断線短絡発生の比較
試験をしたところ9本発明の尚7では2個、麹7′でF
i1個の短絡発生であったのに対し、!4111では短
絡11個及び断線15個。Table 2 Sample Nn7 in Table 1. ? ! 111. A steel paste is baked on the substrates of &7' and NQ 11' in Table 2, and a photosensitive film is applied and formed, exposed, and then etched to have a line width of 50.
A wiring board was obtained in which a fine pattern a of 150 μm was formed. A comparative test was conducted on the occurrence of disconnections and short circuits for 100 wiring boards each of these four types of wiring boards.
While there was only one short circuit, ! 4111 had 11 short circuits and 15 disconnections.
NQII’では短絡5個及び断線2個であった。また。In NQII', there were 5 short circuits and 2 disconnections. Also.
この基板を250℃から10℃の水中に投入する試験を
各10個の試験片について行ったところ。A test was performed on each of 10 test pieces by placing this substrate in water at a temperature of 250°C to 10°C.
階7及びNC17’では全数異常なく、NQII及び階
11′では各9個が破損し次。All items on floor 7 and NC 17' were normal, but on NQII and floor 11', 9 each were damaged.
(発明の効果)
本発明によれば1通常のアルミナ基板製造に用いるA/
、0.粉及びこれとほぼ同じ粒径のZrO,粉及びジル
コニアの安定化剤粉を使用できるので。(Effects of the Invention) According to the present invention, 1. A/
,0. This allows the use of powder, ZrO powder, and zirconia stabilizer powder with approximately the same particle size.
テープ成形が容易であり、これを焼成してもアルミナ及
びジルコニアの粒子成長が起シ難くかつ簡単な表面研摩
でも粒子の脱落等の欠陥が生じないため表面が平滑な基
板が容易かつ安価に得られる。Tape molding is easy, even when the tape is fired, alumina and zirconia particles do not grow easily, and even simple surface polishing does not cause defects such as particles falling off, making it possible to easily and inexpensively obtain a substrate with a smooth surface. It will be done.
またこの基板は0表面が平滑であるほか9機械的強度及
び耐熱衝撃性にも優れるので、この基板を用いて微細配
線を形成した配線板、可搬装置又は高負荷装置用の配線
板が得られる。In addition, this board has a smooth surface and excellent mechanical strength and thermal shock resistance, so it can be used to form wiring boards with fine wiring, wiring boards for portable equipment or high-load equipment. It will be done.
Claims (1)
量部と正方晶相が80%以上のジルコニア及びジルコニ
アの安定化剤10〜40重量部とを含有するアルミナ基
板。 2、アルミナ粉60〜90重量部,ジルコニア粉及びジ
ルコニアの安定化剤粉10〜40重量部,有機結合剤,
可塑剤並びに溶剤を混合し,成形及び焼成することを特
徴とする請求項1記載のアルミナ基板の製造法。 3、アルミナ粉60〜90重量部,ジルコニア粉及びジ
ルコニアの安定化剤粉10〜40重量部,有機結合剤,
可塑剤並びに溶剤を混合し,成形及び焼成後表面を研摩
することを特徴とする請求項1記載のアルミナ基板の製
造法。 4、請求項1記載のアルミナ基板を用いた配線板。[Scope of Claims] 1. An alumina substrate containing 60 to 90 parts by weight of alumina having an average crystal grain size of 5 μm or less, zirconia having a tetragonal phase of 80% or more, and 10 to 40 parts by weight of a zirconia stabilizer. 2. 60 to 90 parts by weight of alumina powder, 10 to 40 parts by weight of zirconia powder and zirconia stabilizer powder, organic binder,
2. The method for producing an alumina substrate according to claim 1, further comprising mixing a plasticizer and a solvent, molding and firing. 3. 60 to 90 parts by weight of alumina powder, 10 to 40 parts by weight of zirconia powder and zirconia stabilizer powder, organic binder,
2. The method of manufacturing an alumina substrate according to claim 1, further comprising mixing a plasticizer and a solvent, and polishing the surface after molding and firing. 4. A wiring board using the alumina substrate according to claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2164812A JPH0421564A (en) | 1990-04-17 | 1990-06-22 | Alumina substrate, production of the same alumina substrate and wiring board using the same alumina substrate |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10118890 | 1990-04-17 | ||
JP2-101188 | 1990-04-17 | ||
JP2164812A JPH0421564A (en) | 1990-04-17 | 1990-06-22 | Alumina substrate, production of the same alumina substrate and wiring board using the same alumina substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0421564A true JPH0421564A (en) | 1992-01-24 |
Family
ID=26442102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2164812A Pending JPH0421564A (en) | 1990-04-17 | 1990-06-22 | Alumina substrate, production of the same alumina substrate and wiring board using the same alumina substrate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0421564A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1514856A1 (en) * | 2003-09-10 | 2005-03-16 | Kyocera Corporation | Alumina/zirconia ceramics and method of producing the same |
JP2007269524A (en) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | Insulating ceramic, ceramic heater using the same and heater integrated element |
WO2010114126A1 (en) * | 2009-04-03 | 2010-10-07 | 株式会社住友金属エレクトロデバイス | Sintered ceramic and substrate comprising same for semiconductor device |
JP2013032265A (en) * | 2011-07-01 | 2013-02-14 | Maruwa Co Ltd | Alumina zirconia sintered board for semiconductor device and manufacturing method therefor |
JP2015032604A (en) * | 2013-07-31 | 2015-02-16 | 京セラ株式会社 | Insulation substrate for electronic component and electronic component |
WO2016208766A1 (en) * | 2015-06-26 | 2016-12-29 | 京セラ株式会社 | Ceramic substrate and mounting substrate using same, and electronic device |
-
1990
- 1990-06-22 JP JP2164812A patent/JPH0421564A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1514856A1 (en) * | 2003-09-10 | 2005-03-16 | Kyocera Corporation | Alumina/zirconia ceramics and method of producing the same |
JP2007269524A (en) * | 2006-03-30 | 2007-10-18 | Kyocera Corp | Insulating ceramic, ceramic heater using the same and heater integrated element |
WO2010114126A1 (en) * | 2009-04-03 | 2010-10-07 | 株式会社住友金属エレクトロデバイス | Sintered ceramic and substrate comprising same for semiconductor device |
JP4717960B2 (en) * | 2009-04-03 | 2011-07-06 | 株式会社住友金属エレクトロデバイス | Ceramic sintered body and substrate for semiconductor device using the same |
CN102395540A (en) * | 2009-04-03 | 2012-03-28 | 株式会社住友金属电设备 | Sintered ceramic and substrate comprising same for semiconductor device |
JP2013032265A (en) * | 2011-07-01 | 2013-02-14 | Maruwa Co Ltd | Alumina zirconia sintered board for semiconductor device and manufacturing method therefor |
JP2015032604A (en) * | 2013-07-31 | 2015-02-16 | 京セラ株式会社 | Insulation substrate for electronic component and electronic component |
WO2016208766A1 (en) * | 2015-06-26 | 2016-12-29 | 京セラ株式会社 | Ceramic substrate and mounting substrate using same, and electronic device |
JPWO2016208766A1 (en) * | 2015-06-26 | 2018-04-19 | 京セラ株式会社 | Ceramic substrate, mounting substrate using the same, and electronic device |
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