JPH04209531A - Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same - Google Patents

Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same

Info

Publication number
JPH04209531A
JPH04209531A JP40058890A JP40058890A JPH04209531A JP H04209531 A JPH04209531 A JP H04209531A JP 40058890 A JP40058890 A JP 40058890A JP 40058890 A JP40058890 A JP 40058890A JP H04209531 A JPH04209531 A JP H04209531A
Authority
JP
Japan
Prior art keywords
pump
chemical liquid
semiconductor device
chemical solution
dust
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP40058890A
Other languages
Japanese (ja)
Inventor
▲高▼池 匡一
Kiyouichi Takaike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP40058890A priority Critical patent/JPH04209531A/en
Publication of JPH04209531A publication Critical patent/JPH04209531A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To prevent dust particles from adhering to a wafer again while the wafer is being treated with a chemical liquid by installing the following: a dust counter which measures the number of dust particles in the chemical liquid; a detection means; and a pump control device. CONSTITUTION:A wafer carrier 9 which houses wafers 10 is lowered; it is passed between a light source 7 and a photosensor 8. Then, the sensor 8 detects the wafer carrier 9 and is actuated; it actuates a pump control device 6, increases the number of revolutions of a pump 5 and increases the flow rate of a chemical liquid. When the carrier 9 is immersed in the chemical liquid in this state, the chemical liquid is overflowed into an outer tank 2 from the upper part of an inner tank 1. Then, the number of dust particles in the overflowed chemical liquid is measured by using a dust counter 3. After confirming that the number of dust particles has been reduced to the prescribed number or lower, the number of revolutions of the pump is reduced, and the flow rate of the chemical liquid is set to a nonoperating state. Thereby, it is possible to prevent that the dust particles coming from the wafers 10 adhere again and to enhance the economical efficiency and the reliability of the title apparatus.

Description

【発明の詳細な説明】[Detailed description of the invention]

[0001] [0001]

【産業上の利用分野1本発明は、半導体基板の前処理を
薬液により行う装置及びそれを用いた薬液処理方法の改
良に関するものである。近年の微細化した半導体基板の
薬液による前処理においては、この薬液中の塵埃を極力
減少させることが求められている。 [0002]  以上のような状況から、半導体基板に
付着している塵埃が薬液中に拡散して半導体基板に再付
着するのを防止することが可能な半導体装置の製造装置
及びそれを用いた薬液処理方法が要望されている。 [0003] 【従来の技術】従来の半導体装置の製造装置及びそれを
用いた薬液処理方法について図3により詳細に説明する
。図3は従来の半導体装置の製造装置の概略構造を示す
図である。図に示す半導体装置の製造装置は、被処理物
、例えばウェーハ10を収納する搬送容器、例えばつ工
−ハキャリア9を内槽11内の薬液に浸漬してウェーハ
10を薬液処理する装置で、ポンプ15によってこの薬
液を内槽11の下部から供給し、この内槽11を内部に
設けた外槽12内にこの内槽11の上部からこの薬液を
オーバーフローさせ、この薬液をフィルタ14にて濾過
し、再びポンプ15により内槽11に循環させて供給す
る半導体装置の薬液処理装置である。 [0004]このような従来の半導体装置の製造装置に
よるウェーハ10の薬液処理においては、薬液を供給す
るポンプ15の回転数は常に一定であり、従って供給さ
れる薬液の量も一定であるため、ウェーハ10を収納し
たつ工−ハキャリア9を内槽11内の薬液中に浸漬する
と、その直後には急速に薬液中の塵埃の数か増大し、そ
の後徐々に薬液中の塵埃の数は減少するが、その間に塵
埃がつ工−ハ10に再び付着する障害が発生している。 [0005] 〔発明が解決しようとする課題1以上説明した従来の半
導体装置の製造装置及びそれを用いた薬液処理方法にお
いては、薬液を供給するポンプの回転数を常に一定に保
っているので、供給される薬液の量も常に一定であるた
め、ウェーハを収納したウェーハキャリアを内槽内の薬
液中に浸漬した直後には急速に薬液中の塵埃の数が増大
し、その後徐々に薬液中の塵埃の数は減少するが、その
開に塵埃がウェーハに再び付着する障害が発生するとい
う問題点があった。 (OOO6]本発明は以上のような状況から、ウェーハ
の薬液処理中に塵埃がウェーハに再び付着するのを防止
することが可能となる半導体装置の製造装置及びそれを
用いた薬液処理方法の提供を目的としたものである。 [0007]
INDUSTRIAL APPLICATION FIELD 1 The present invention relates to an apparatus for pre-treating a semiconductor substrate with a chemical liquid, and an improvement in a chemical liquid processing method using the same. In the pretreatment of recent miniaturized semiconductor substrates with chemicals, it is required to reduce the amount of dust in the chemicals as much as possible. [0002] In light of the above circumstances, a semiconductor device manufacturing apparatus and a chemical solution using the same are provided that can prevent dust adhering to a semiconductor substrate from diffusing into a chemical solution and re-adhering to the semiconductor substrate. A processing method is required. [0003] A conventional semiconductor device manufacturing apparatus and a chemical processing method using the same will be explained in detail with reference to FIG. FIG. 3 is a diagram showing a schematic structure of a conventional semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus shown in the figure is an apparatus that processes the wafer 10 with a chemical liquid by immersing a transport container, such as a tube carrier 9, in which a workpiece to be processed, for example, a wafer 10 is stored, in a chemical liquid in an inner tank 11. This chemical solution is supplied from the lower part of the inner tank 11 by the pump 15, and is allowed to overflow from the upper part of the inner tank 11 into the outer tank 12 in which the inner tank 11 is provided, and this chemical solution is filtered by the filter 14. This is a chemical processing device for a semiconductor device in which the chemical solution is circulated and supplied to the inner tank 11 by a pump 15 again. [0004] In the chemical liquid processing of the wafer 10 by such a conventional semiconductor device manufacturing apparatus, the rotation speed of the pump 15 that supplies the chemical liquid is always constant, and therefore the amount of the chemical liquid supplied is also constant. When the tank carrier 9 containing the wafers 10 is immersed in the chemical solution in the inner tank 11, the number of dust particles in the chemical solution increases rapidly immediately after that, and then the number of dust particles in the chemical solution gradually decreases. However, during this time, a problem occurs in which dust re-adheres to the workpiece 10. [0005] [Problems to be Solved by the Invention 1] In the conventional semiconductor device manufacturing apparatus and the chemical liquid processing method using the same described above, the rotation speed of the pump that supplies the chemical liquid is always kept constant. Since the amount of chemical solution supplied is always constant, the number of dust particles in the chemical solution increases rapidly immediately after the wafer carrier containing the wafer is immersed in the chemical solution in the inner tank, and then gradually increases. Although the number of dust particles is reduced, there is a problem in that the dust particles re-adhere to the wafer. (OOO6) In view of the above-mentioned circumstances, the present invention provides a semiconductor device manufacturing apparatus and a chemical treatment method using the same, which makes it possible to prevent dust from adhering to a wafer again during chemical treatment of the wafer. It is intended for the purpose. [0007]

【課題を解決するための手段】本発明の半導体装置の製
造装置は、ポンプにより薬液を内槽に供給し、この内槽
を内部に設けた外槽内にこの内槽の上部からこの薬液を
オーバーフローさせ、オーバーフローさせた薬液をフィ
ルタで濾過して再びこのポンプによりこの内槽に供給す
る半導体装置の製造装置において、この外槽とこのフィ
ルタの間に設けた、レーザにより薬液中の塵埃数を計測
する塵埃カウンタと、この内槽の上部に対向して設けた
光源と光センサとからなる検知手段と、この先センサ及
びこの塵埃カウンタによってこのポンプの回転数を制御
するポンプ制御装置とを具備するよう構成し、本発明の
半導体装置の薬液処理方法は、上記の半導体装置の製造
装置を用いた半導体装置の薬液処理方法であって、被処
理物を収納する搬送容器がこの光源と光センサの間を通
過したのをこの光センサにより検知してこのポンプの回
転数を増加してこの薬液の循環速度を増加させ、オーバ
ーフローした薬液内の塵埃数を前記塵埃カウンタによっ
て計測し、塵埃数が所定の数以下になればこのポンプの
回転数を減少させて前記薬液の循環速度を低下させるよ
う構成する。 [0008]
[Means for Solving the Problems] In the semiconductor device manufacturing apparatus of the present invention, a chemical solution is supplied to an inner tank by a pump, and the chemical solution is introduced from the upper part of the inner tank into an outer tank having the inner tank provided therein. In semiconductor device manufacturing equipment that overflows, filters the overflowing chemical solution with a filter, and supplies it again to this inner tank using this pump, the number of dust particles in the chemical solution is determined by a laser installed between this outer tank and this filter. It is equipped with a dust counter for measuring, a detection means consisting of a light source and a light sensor disposed opposite to each other at the upper part of the inner tank, and a pump control device for controlling the rotation speed of the pump using the sensor and the dust counter. The method for chemically processing a semiconductor device according to the present invention is a method for chemically processing a semiconductor device using the above-mentioned semiconductor device manufacturing apparatus, in which a transport container for storing an object to be processed is connected to the light source and the optical sensor. The optical sensor detects that the chemical has passed through the gap, and the rotation speed of the pump is increased to increase the circulation speed of the chemical.The dust counter measures the number of dust in the overflowing chemical, and the number of dust reaches a predetermined value. If the number of rotations is less than , the rotation speed of this pump is decreased to lower the circulation speed of the chemical solution. [0008]

【作用】即ち本発明においては、ウェーハを収納するウ
ェーハキャリアを下降して光源と光センサの間を通過さ
せると、光センサがウェーハキャリアを検知して作動し
図2に示すように、ポンプ制御装置を作動してポンプの
回転数を増加させて薬液の流量を増加させる。この状態
でウェーハキャリアを薬液中に浸漬すると、薬液は内槽
の上部から外槽内にオーバーフローする。このオーバー
フローした薬液中の塵埃数を塵埃カウンタによって計測
し、塵埃数が所定の数以下に減少したことを確認した後
、ポンプの回転数を減少させて薬液の流量を非稼働時の
状態にするので、ウェーハから出た塵埃が再び付着する
のを防止することが可能となる。 [0009]
[Operation] That is, in the present invention, when the wafer carrier containing the wafer is lowered and passed between the light source and the optical sensor, the optical sensor detects the wafer carrier and is activated to control the pump as shown in FIG. Activate the device to increase the rotational speed of the pump and increase the flow rate of the chemical solution. When the wafer carrier is immersed in the chemical solution in this state, the chemical solution overflows from the upper part of the inner tank into the outer tank. The number of dust particles in this overflowing chemical solution is measured by a dust counter, and after confirming that the number of dust particles has decreased to a predetermined number or less, the rotation speed of the pump is reduced to bring the flow rate of the chemical solution to the non-operating state. Therefore, it is possible to prevent dust coming out from the wafer from adhering again. [0009]

【実施例】以下図1〜図2により本発明による一実施例
の半導体装置の製造装置及びそれを用いた半導体装置の
薬液処理方法について詳細に説明する。図1は本発明に
よる一実施例の半導体装置の製造装置の概略構造を示す
図である。図に示すように本発明による半導体装置の製
造装置は、ウェーハキャリア9に収納した被処理物、例
えばウェーハ10を内槽1内の薬液に浸漬して薬液処理
する装置で、ポンプ5によってこの薬液を内槽1の下部
から供給し、この内槽1を内部に設けた外槽2内にこの
内槽1の上部からこの薬液をオーバーフローさせ、この
薬液をフィルタ4で濾過し、再びポンプ5により内槽1
に循環させて供給する半導体装置の製造装置において、
つ工−ハ10を収納するウェーハキャリア9が、内槽1
の上に下降して来たことを検知する光源7と光センサ8
からなる検知手段と、内槽1から外槽2にオーバーフロ
ーした薬液中の塵埃数を計測する塵埃カウンタ3と、上
記の光センサ8及び塵埃カウンタ3によって作動され、
ポンプ5の回転数を制御するポンプ制御装置6とを備え
た半導体装置の製造装置である。 [00101このような本発明による一実施例の半導体
装置の製造装置においては、図2に示すように非稼働時
にはポンプ回転数は1. OOOrpm、薬液の流量は
50リットル/分、0.5μm以上の塵埃粒子数は1個
/Cm3であるが、ウェーハ10を収納するウェーハキ
ャリア9が下降して光源7と光センサ8との間を通過す
ると、光センサ8がウェーハキャリア9を検知して、ポ
ンプ制御装置6を作動してポンプ5の回転数を3. O
OOrpmに増加させ、薬液の流量が100リツトル/
分に増加する。 [0011]この状態でウェーハキャリア9が内槽1内
の薬液の液面と接触し、更に薬液中に浸漬されると、流
量が増加した薬液によりウェーハキャリア9やウェーハ
10に付着している塵埃は外槽2内に流出する。この塵
埃を約1,000個/cm3含む薬液は、外槽2に接続
されており、レーザによって液中の塵埃の数を計測する
塵埃カウンタ3によってその中の塵埃数が計測される。 この塵埃数は時間の経過にしたがって減少するので、0
.5μm以上の塵埃粒子数が1f[F/cm’以下にな
ればポンプ制御装置6を作動してポンプ5の回転数を1
.00Orpmに減少させ、薬液の流量を非稼働時の5
0リットル/分にする。 (OO12]このように流量が増加した薬液にウェーハ
キャリア9及びウェーハ10を浸漬して薬液処理を行い
、処理に用いた後に内槽1からオーバーフローした薬液
中の塵埃数を塵埃カウンタ3によって計測し、塵埃数が
一定の数以下になればポンプ制御装置6を作動してポン
プ5の回転数を減少させ、薬液の流量を非稼働時の状態
にするから、塵埃数が多い場合には薬液の流量を増加し
て迅速に塵埃を除去して再び塵埃がウェーハ10に付着
するのを防止することが可能となり、薬液中の塵埃数が
所定の数以下になれば流量を減少して薬液の流量を非稼
働時の状態にして薬液の循環量を塵埃数に応じた適切な
量にすることが可能となる。 [0013]
DESCRIPTION OF THE PREFERRED EMBODIMENTS A semiconductor device manufacturing apparatus according to an embodiment of the present invention and a method for chemically treating semiconductor devices using the same will be explained in detail below with reference to FIGS. 1 and 2. FIG. 1 is a diagram showing a schematic structure of an apparatus for manufacturing a semiconductor device according to an embodiment of the present invention. As shown in the figure, the semiconductor device manufacturing apparatus according to the present invention is an apparatus in which an object to be processed, such as a wafer 10, housed in a wafer carrier 9 is immersed in a chemical solution in an inner tank 1 for chemical treatment. is supplied from the lower part of the inner tank 1, and the chemical solution overflows from the upper part of the inner tank 1 into the outer tank 2, which has the inner tank 1 installed therein.The chemical solution is filtered by the filter 4, and then pumped again by the pump 5. Inner tank 1
In manufacturing equipment for semiconductor devices that circulate and supply
A wafer carrier 9 for storing a wafer 10 is placed in an inner tank 1.
A light source 7 and a light sensor 8 detect that the object has descended to the top.
a dust counter 3 that measures the number of dust in the chemical solution overflowing from the inner tank 1 to the outer tank 2, and the optical sensor 8 and the dust counter 3,
This is a semiconductor device manufacturing apparatus that includes a pump control device 6 that controls the rotation speed of a pump 5. [00101 In such a semiconductor device manufacturing apparatus according to an embodiment of the present invention, as shown in FIG. 2, when the pump is not in operation, the pump rotation speed is 1. OOOrpm, the flow rate of the chemical solution is 50 liters/min, and the number of dust particles of 0.5 μm or more is 1/Cm3. When the wafer carrier 9 passes by, the optical sensor 8 detects the wafer carrier 9 and activates the pump control device 6 to control the rotation speed of the pump 5 to 3. O
0Orpm, and the flow rate of the chemical solution is 100 liters/
increase in minutes. [0011] In this state, when the wafer carrier 9 comes into contact with the surface of the chemical solution in the inner tank 1 and is further immersed in the chemical solution, the dust attached to the wafer carrier 9 and the wafers 10 is removed by the increased flow rate of the chemical solution. flows out into the outer tank 2. This chemical solution containing about 1,000 particles/cm3 of dust is connected to the outer tank 2, and the number of dust particles therein is counted by a dust counter 3 which measures the number of dust particles in the liquid using a laser. The number of dust particles decreases over time, so it becomes 0.
.. When the number of dust particles of 5 μm or more becomes 1 f [F/cm' or less, the pump control device 6 is activated to reduce the rotation speed of the pump 5 to 1
.. 00Orpm, and the flow rate of the chemical solution was reduced to 500 rpm during non-operation.
Set to 0 liters/minute. (OO12) The wafer carrier 9 and wafer 10 are immersed in the chemical solution whose flow rate has been increased in this manner to perform chemical processing, and the number of dust particles in the chemical solution that overflows from the inner tank 1 after being used for processing is measured by the dust counter 3. When the number of dust particles falls below a certain number, the pump control device 6 is activated to reduce the rotation speed of the pump 5, and the flow rate of the chemical solution is set to the non-operating state. By increasing the flow rate, it is possible to quickly remove dust and prevent dust from adhering to the wafer 10 again, and when the number of dust particles in the chemical solution falls below a predetermined number, the flow rate is decreased to reduce the flow rate of the chemical solution. It becomes possible to set the amount of circulation of the chemical solution to an appropriate amount according to the number of dust particles by setting it to a non-operating state. [0013]

【発明の効果】以上の説明から明らかなように本発明に
よれば、極めて簡単な構造の変更により、被処理物の薬
液による処理中においてこの被処理物への塵埃の再付着
を防止することが可能となる利点があり、著しい経済的
及び、信頼性向上の効果が期待できる半導体装置の製造
装置及び薬液供給方法の提供が可能となる。
As is clear from the above description, according to the present invention, by extremely simple structural changes, it is possible to prevent dust from re-adhering to the object to be treated while it is being treated with the chemical solution. It is possible to provide a semiconductor device manufacturing apparatus and a chemical solution supply method that can be expected to have significant economical and reliability improvement effects.

【図面の簡単な説明】[Brief explanation of the drawing]

【図1】本発明による一実施例の半導体装置の製造装置
の概略構造を示す図、
FIG. 1 is a diagram showing a schematic structure of a semiconductor device manufacturing apparatus according to an embodiment of the present invention;

【図2】本発明による一実施例のポンプ回転数、薬液の
流量、塵埃数を示すタイムチャート、
FIG. 2 is a time chart showing the pump rotation speed, the flow rate of the chemical solution, and the number of dust particles in one embodiment of the present invention;

【図3】従来の半導体装置の製造装置の概略構造を示す
図、
FIG. 3 is a diagram showing a schematic structure of a conventional semiconductor device manufacturing apparatus;

【符号の説明】[Explanation of symbols]

1ま内槽、 2ま外槽、 3ま塵埃カウンタ、 4よフィルタ、 5よポンプ、 6まポンプ制御装置、 7ま光源、 8ま光センサ、 9′iウエーハキヤリア、 10よウェーハ、 1 inner tank, 2 outer tank, 3 dust counter, 4. Filter, 5, pump, 6 pump control device, 7ma light source, 8 optical sensors, 9'i wafer carrier, 10 wafer,

【図1】[Figure 1]

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】ポンプ(5)により薬液を内槽(1)に供
給し、前記内槽(1)を内部に設けた外槽(2)内に該
内槽(1)の上部から前記薬液をオーバーフローさせ、
オーバーフローさせた該薬液をフィルタ(4)で濾過し
て再び前記ポンプ(5)により前記内槽(1)に供給す
る半導体装置の製造装置において、前記外槽(2)と前
記フィルタ(4)の間に設けた、レーザにより薬液中の
塵埃数を計測する塵埃カウンタ(3)と、前記内槽(1
)の上部に対向して設けた光源(7)と光センサ(8)
とからなる検知手段と、前記光センサ(8)及び前記塵
埃カウンタ(3)によって前記ポンプ(5)の回転数を
制御するポンプ制御装置(6)とを具備することを特徴
とする半導体装置の製造装置。
1. A pump (5) supplies a chemical solution to an inner tank (1), and the chemical solution is supplied from the upper part of the inner tank (1) into an outer tank (2) in which the inner tank (1) is provided. overflow,
In the semiconductor device manufacturing apparatus, the overflowing chemical solution is filtered by a filter (4) and then supplied to the inner tank (1) by the pump (5), in which the outer tank (2) and the filter (4) are A dust counter (3) that measures the number of dust particles in the chemical solution using a laser and the inner tank (1
) A light source (7) and a light sensor (8) placed opposite each other on the top of the
and a pump control device (6) that controls the rotation speed of the pump (5) by the optical sensor (8) and the dust counter (3). Manufacturing equipment.
【請求項2】請求項1記載の半導体装置の製造装置を用
いた半導体装置の薬液処理方法であって、被処理物(1
0)を収納する搬送容器(9)が前記光源(7)と光セ
ンサ(8)の間を通過したのを前記光センサ(8)によ
り検知して前記ポンプ(5)の回転数を増加して前記薬
液の循環速度を増加させ、オーバーフローした薬液内の
塵埃数を前記塵埃カウンタ(3)によって計測し、塵埃
数が所定の数以下になれば前記ポンプ(5)の回転数を
減少させて前記薬液の循環速度を低下させることを特徴
とする半導体装置の薬液処理方法。
2. A method for processing a semiconductor device with a chemical solution using the semiconductor device manufacturing apparatus according to claim 1, the method comprising:
0) passing between the light source (7) and the optical sensor (8), the optical sensor (8) increases the rotation speed of the pump (5). The number of dust particles in the overflowing chemical liquid is measured by the dust counter (3), and when the number of dust particles becomes a predetermined number or less, the rotation speed of the pump (5) is decreased. A method of processing a chemical liquid for a semiconductor device, characterized in that the circulation speed of the chemical liquid is reduced.
JP40058890A 1990-12-06 1990-12-06 Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same Withdrawn JPH04209531A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP40058890A JPH04209531A (en) 1990-12-06 1990-12-06 Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP40058890A JPH04209531A (en) 1990-12-06 1990-12-06 Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same

Publications (1)

Publication Number Publication Date
JPH04209531A true JPH04209531A (en) 1992-07-30

Family

ID=18510484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP40058890A Withdrawn JPH04209531A (en) 1990-12-06 1990-12-06 Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same

Country Status (1)

Country Link
JP (1) JPH04209531A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188048A (en) * 2008-02-04 2009-08-20 Mitsumi Electric Co Ltd Manufacturing method of semiconductor device, and wet etching device
CN108780768A (en) * 2016-04-14 2018-11-09 应用材料公司 The 30NM queuing type liquid particle counters of semiconductor processing equipment are tested and cleaning

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009188048A (en) * 2008-02-04 2009-08-20 Mitsumi Electric Co Ltd Manufacturing method of semiconductor device, and wet etching device
CN108780768A (en) * 2016-04-14 2018-11-09 应用材料公司 The 30NM queuing type liquid particle counters of semiconductor processing equipment are tested and cleaning
CN108780768B (en) * 2016-04-14 2021-12-21 应用材料公司 30NM in-line liquid particle counter test and cleaning for semiconductor processing equipment

Similar Documents

Publication Publication Date Title
KR101293809B1 (en) Substrate processing apparatus and substrate processing method
US6004399A (en) Ultra-low particle semiconductor cleaner for removal of particle contamination and residues from surface oxide formation on semiconductor wafers
JP2008034779A (en) Method and equipment for processing substrate
EP0481506A2 (en) Method of treating substrate and apparatus for the same
JP2000338684A (en) Substrate surface treating apparatus
JP4367587B2 (en) Cleaning method
US20040035449A1 (en) Wet cleaning facility having bubble-detecting device
JPH04209531A (en) Manufacturing apparatus for semiconductor device, and method of treating chemical liquid for semiconductor device by using the same
US20050271985A1 (en) Method, apparatus and system for rinsing substrate with pH-adjusted rinse solution
JP2002096012A (en) Device for treating substrate
JPS63110732A (en) Washing method for semiconductor substrate
JPH03107477A (en) Method and device for wet-treating semiconductor material
SK284835B6 (en) Procedure for drying substrate surface
JPH0737851A (en) Cleaning device
JP2009110984A (en) Substrate processing method and substrate processing apparatus
US5662743A (en) Method of cleaning silicon wafers in cleaning baths with controlled vertical surface oscillations and controlled in/out speeds
JP3293399B2 (en) Treatment method for plate-like sample surface
KR100367991B1 (en) Apparatus for treating surface of boards
JP2012064646A (en) Substrate processing method, storage medium having program recorded therein for execution of substrate processing method and substrate processing apparatus
JPH06267837A (en) Treatment liquid coater and its method
US20030041877A1 (en) State of the art constant flow device
JP2005039002A (en) Washing apparatus and method therefor
JPH05291226A (en) Method and apparatus for cleaning by circulation and filtration
JPH0128671Y2 (en)
KR100489652B1 (en) Hybrid wafer immersion apparatus for semiconductor device manufacturing

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19980312