JPH04199136A - Production of wavelength converter element - Google Patents
Production of wavelength converter elementInfo
- Publication number
- JPH04199136A JPH04199136A JP33402090A JP33402090A JPH04199136A JP H04199136 A JPH04199136 A JP H04199136A JP 33402090 A JP33402090 A JP 33402090A JP 33402090 A JP33402090 A JP 33402090A JP H04199136 A JPH04199136 A JP H04199136A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- polarization
- grooves
- heat treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 230000003287 optical effect Effects 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 2
- 230000010287 polarization Effects 0.000 abstract description 21
- 238000010438 heat treatment Methods 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 6
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000000463 material Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- 229910003327 LiNbO3 Inorganic materials 0.000 abstract 1
- 230000000737 periodic effect Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 241000208140 Acer Species 0.000 description 1
- 229910012463 LiTaO3 Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は非線形光学結晶基板を用いて基本波を波長変換
する第２高調波発生素子（ＳＨＧ）の製造方法に関する
ものであ４
従来の技術
最近 半導体レーザ開発の進展とともに非線形光学効果
を用いて半導体レーザ光を基本波としてその波長の半分
の第２高調波を発生させるＳＨＧ素子の研究開発が盛ん
になってき九 その有望なるＳＨＧ構造として、非線形
光学結晶基板の表面に選択的な周期構造を有する分極反
転領域を設けたＳＨＧ素子がある。例えばアイ・イー・
イー・イー・フォトニクス・テクノロジー・レターズ（
Ｉ Ｅ Ｅ Ｅ ｐｈｏｔｏｎｉｃｓ ｔｅｃｈｎｏｌ
ｏｇｙ Ｌｅｔｔｅｒｓ） １９８９年１０月号Ｐ３
１６〜３１８のＪ、ウイビョーン氏等によると第４図の
ような構成となっていム１はＬｉＮｂＯ５基板 ２は光
導波路 ３は周期構造を有する分極反転領域であム こ
の論文では３ｍＷの赤外の半導体レーザ光を導入して６
０ｎＷのブルー光を発生させていも 分極反転領域の形
成方法は基板１の表面に厚み１５０ｎｍの５１０２スト
ライプ状のパターンを形成した後、乾燥アルゴンガス雰
囲気中でキュリー点近傍の１０００℃まで昇温し０．７
℃／秒で室温まで降温していも このような熱処理工程
中に基板１表面においてＬｉｅＯが外拡散して表面の組
成が選択的に変化し周期的な分極反転領域が形成されも
発明が解決しようとする課題
ところで、上記のような熱処理の工程中において、Ｌｉ
ＮｂＯ５基板中に内在する欠陥等に起因した歪み場が増
幅されて熱応力が発生し 基板表面の分極反転形成過程
に影響を及ぼす、例えば基板サイズによって分極反転深
さ等の形状が変化する問題が生じていも （ＬｉＮｂＯ
ｓ結晶の評価について（戴 例えば応用物理第５９巻第
８号（１９９０年）Ｐ９９６〜１０１３の野沢氏等の報
告があも ）従来例の実験条件で分極反転熱処理を行っ
た限 基板サイズ１〜３インチにおいては分極反転領域
は見られず１ｃｍ角程度の大きさで形成可能という結果
が得られていも
本発明は上記従来の問題点を鑑みてなされたもので、大
きな面積の非線形光学結晶基板を用いて選択的な周期構
造を有する分極反転領域を形成可能な作製方法を提供す
るものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a method for manufacturing a second harmonic generation element (SHG) that converts the wavelength of a fundamental wave using a nonlinear optical crystal substrate. With the progress of laser development, research and development of SHG elements that use nonlinear optical effects to generate a second harmonic of half the wavelength of semiconductor laser light as a fundamental wave has become active.9 As a promising SHG structure, nonlinear optical There is an SHG element in which a polarization inversion region having a selective periodic structure is provided on the surface of a crystal substrate. For example, I.E.
E.E. Photonics Technology Letters (
IE E E photonics technology
ogy Letters) October 1989 issue P3
According to J. 16-318, Mr. Uybjörn et al., the structure is as shown in Fig. 4, where 1 is a LiNbO5 substrate, 2 is an optical waveguide, and 3 is a polarization inversion region with a periodic structure. Introducing semiconductor laser light 6
Even if 0nW of blue light is generated, the polarization inversion region is formed by forming a 5102 stripe pattern with a thickness of 150nm on the surface of the substrate 1, and then heating it to 1000℃ near the Curie point in a dry argon gas atmosphere. 0.7
Even if the temperature is lowered to room temperature at a rate of ℃/second, LieO diffuses out on the surface of the substrate 1 during such a heat treatment process, the composition of the surface changes selectively, and periodic polarization inversion regions are formed.The invention will solve the problem. However, during the heat treatment process as described above, Li
The strain field caused by defects etc. inherent in the NbO5 substrate is amplified and thermal stress is generated, which affects the polarization inversion formation process on the substrate surface.For example, there is a problem in which the shape such as the polarization inversion depth changes depending on the substrate size. Even if it occurs (LiNbO
Regarding the evaluation of s-crystals (see, for example, the report by Mr. Nozawa et al. in Applied Physics Vol. 59, No. 8 (1990), pages 996-1013), as long as the polarization inversion heat treatment was performed under the conventional experimental conditions. The present invention was made in view of the above-mentioned conventional problems, and the present invention was made in view of the above-mentioned conventional problems, and the polarization inversion region was not observed in the 3-inch film, and it was possible to form it in a size of about 1 cm square. The present invention provides a manufacturing method capable of forming a polarization inversion region having a selective periodic structure using the method.
課題を解決するための手段
本発明（よ 非線形光学効果を有する基板の主表面上に
グイシングツ−により溝を形成する工程と、前記基板表
面に絶縁膜を堆積する工程と、前記絶縁膜を選択的にエ
ツチングしてストライプ状にする工程と、前記基板に熱
処理をして前記絶縁膜直下の前記基板中に分極反転領域
を形成する工程とを有する分極反転型波長変換素子の製
造方法であム
作用
以上のように基板ウェハーの主表面上にストライプ状の
溝を形成してやれば 基板表面に走行する歪み場による
熱応力が前記溝によって途切れて、ウェハー全域に渡っ
て熱応力が加わらなＬｓ したがって、分極反転熱処
理工程中に生じる熱応力は緩和され安定な分極反転領域
が形成可能となるので基板サイズの大きなウェハーでも
容易に分極反転領域かえられる。。Means for Solving the Problems The present invention includes a step of forming a groove on the main surface of a substrate having a nonlinear optical effect by a guising tool, a step of depositing an insulating film on the surface of the substrate, and a step of selectively depositing the insulating film. A method for manufacturing a polarization-inverted wavelength conversion element, which includes a step of etching the substrate into a stripe shape, and a step of heat-treating the substrate to form a polarization-inverted region in the substrate directly under the insulating film. If striped grooves are formed on the main surface of the substrate wafer as described above, the thermal stress caused by the strain field running on the substrate surface will be interrupted by the grooves, and no thermal stress will be applied to the entire wafer. Thermal stress generated during the inversion heat treatment step is relaxed and a stable polarization inversion region can be formed, so even in a wafer with a large substrate size, the polarization inversion region can be easily changed.
実施例
以下、本実施例を示す。第１図は本発明のストライプ状
に溝を形成した＋０面のＬｉＮｂＯ３２インチ基板ウェ
ハー１０を示す。厚みは５００μ瓜 溝２０の寸法は輻
３００μ瓜 深さ１００μｍのものであム 溝間隔は１
ｃｍである。第２図は溝を形成し分極反転領域を形成し
たＬｉＮｂ０？ウエハーの断面図を示す。溝方向はそれ
ぞれａ。Example This example will be shown below. FIG. 1 shows a +0-sided LiNbO 32-inch substrate wafer 10 with grooves formed in stripes according to the present invention. The thickness is 500 μm, the dimensions of the groove 20 are 300 μm in diameter, and the depth is 100 μm. The groove spacing is 1
cm. Figure 2 shows LiNb0? in which grooves are formed and polarization inversion regions are formed. A cross-sectional view of the wafer is shown. The groove direction is a.
ｂ軸方向に形成していも その作製工程について第３図
を用いて説明すも まず、第３図（ａ）で＋Ｃ軸を主表
面とするＬｉＮｂ０＊ウ工ハー１０表面をａ、 ｂ軸
方向に１ｃｍの等間隔でダイシングソーで溝２０を形成
する。改番ミ ウェハー全面にＳｉＯｓＭをスパッタ
ー法で２００ ｎｍ堆積すも フォトリソグラフィー法
でレジストをストライプ状にバターニングし その後Ｈ
Ｆ液でＳｉＯ！膜を選択的にエツチングして第３図（ｂ
）のようなストライプ状の５ｉ０２４０膜を形成する。Although the manufacturing process will be explained using FIG. 3, first, in FIG. 3(a), the surface of the LiNb0* wafer 10 whose main surface is the +C axis is formed in the a and b axis directions. Grooves 20 are formed at equal intervals of 1 cm using a dicing saw. 200 nm of SiOsM was deposited on the entire surface of the wafer by sputtering, and then the resist was patterned into stripes using photolithography.
SiO with F liquid! The film is selectively etched to produce a
) A striped 5i0240 film is formed.
パターン間隔は６μへ ストライプ幅は３μｍであム
次？；１０６０℃１００分間熱処理を行うと、５ｉｄｅ
直下の基板中に第β図（Ｃ）のようにウェハーの全域に
渡り分極反転領域３０が形成された ここで基板にＬｉ
ＮｂＯ５を用いて説明した力（その他の非線形材料基板
としてＬｉＴａＯ３、ＫＴＰ （ＫＴ ｉ ０ＰＯ＝）
、ＫＮｂＯｓ、ＮＹＡＢ （ＮｄＹＡＩＢＯ）などの結
晶においても可能であることはいうまでもな（ｔ また
本実施例において溝の形成をグイシングツ−で行った
力（その理由は上記記載の非線形材料はＨＦ液などの溶
液でエツチング可能である力丈 溝寸法が大きく深いた
め通常用いられるマスクは直ちに劣化するという問題が
あり、適当なマスクが存在しないからである。また 分
極反転マスクとしてＳｉＯ２膜を用いて説明した力＜
Ｎｂ、Ｔａ、Ｐｔなどの金属マスクや５ｉｓＮ＝など
の絶縁膜を用いても効果があることはいうまでもなｌ、
％
発明の効果
以上のよう顛Ｌ Ｉ Ｎ ｂ Ｏａウェハー上にストラ
イプ状の溝をダイシングソーにより形成すれば前記溝間
の領域にパターン化したＳｉＯ２膜マスクを堆積して高
温熱処理をしても基板表面には熱応力歪みは緩和され
ウェハー全域にわたって分極反転領域が容易に形成可能
となる。Pattern spacing is 6μm Stripe width is 3μm
Next? ; When heat treated at 1060℃ for 100 minutes, 5ide
A polarization inversion region 30 is formed in the substrate immediately below it over the entire area of the wafer as shown in Fig. β (C).
The force explained using NbO5 (other nonlinear material substrates are LiTaO3, KTP (KT i 0PO=)
It goes without saying that this is possible in crystals such as , KNbOs, NYAB (NdYAIBO), etc. This is because there is a problem that the normally used mask quickly deteriorates because the groove size is large and deep, and there is no suitable mask.Also, we will explain using a SiO2 film as a polarization reversal mask. The power <
It goes without saying that using a metal mask such as Nb, Ta, or Pt or an insulating film such as 5isN= is also effective.
% Effects of the invention As described above, if striped grooves are formed on a L I N b Oa wafer using a dicing saw, the substrate will remain intact even if a patterned SiO2 film mask is deposited in the area between the grooves and subjected to high temperature heat treatment. Thermal stress strain is relaxed on the surface.
A polarization inversion region can be easily formed over the entire wafer.
第１図は本発明の一実施例の分極反転型波長変換素子作
製に用いるダイシングソーで溝を形成した非線形基板ウ
ェハー表面医 第２図は溝を設は分極反転領域を形成し
たウェハー断面ｌ 第３図は分極反転形成プロセス工程
の説明医 第４図は分極反転型波長変換素子の斜視図を
示す。
１・・・ＬｉＮｂＯ５基楓 ２・・・光導波路 ３・・
・分極反転領域 ２０・・・鳳 ３０・・・分極反転領
域 ４０・・・５１０２乳
代理人の氏名 弁理士 小鍜治 明 ほか２名第 ｌ
１７
１１３図
ＩＩ ４ １Ｔ′：
／ １ｉＮｌ：ｌ）、ｓ塁故Figure 1 shows the surface of a nonlinear substrate wafer with grooves formed with a dicing saw used for manufacturing a polarization-inverted wavelength conversion element according to an embodiment of the present invention. Figure 2 shows a cross-section of a wafer with grooves and polarization-inverted regions formed. FIG. 3 shows an explanation of the polarization inversion forming process. FIG. 4 shows a perspective view of a polarization inversion type wavelength conversion element. 1... LiNbO5-based maple 2... Optical waveguide 3...
・Polarization inversion area 20...Otori 30...Polarization inversion area 40...5102 Name of agent Patent attorney Akira Okaji and 2 others No.1
17 113Figure II 4 1T': / 1iNl:l), s base cause
Claims (2)
成する工程と、前記基板表面に絶縁膜を堆積する工程と
、前記絶縁膜を選択的にエッチングしてストライプ状に
する工程と、前記基板に熱処理をして前記絶縁膜直下の
前記基板中に分極反転領域を形成する工程とを有する分
極反転型波長変換素子の製造方法。(1) forming a groove on the main surface of a substrate having a nonlinear optical effect; depositing an insulating film on the surface of the substrate; selectively etching the insulating film into a stripe shape; A method for manufacturing a polarization-inverted wavelength conversion element, comprising the step of heat-treating the substrate to form a polarization-inverted region in the substrate directly under the insulating film.
を特徴とする請求項１記載の分極反転型波長変換素子の
製造方法。(2) The method for manufacturing a polarization-inverted wavelength conversion element according to claim 1, characterized in that a LiNbO_3 crystal wafer is used as the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33402090A JPH04199136A (en) | 1990-11-29 | 1990-11-29 | Production of wavelength converter element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33402090A JPH04199136A (en) | 1990-11-29 | 1990-11-29 | Production of wavelength converter element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04199136A true JPH04199136A (en) | 1992-07-20 |
Family
ID=18272606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33402090A Pending JPH04199136A (en) | 1990-11-29 | 1990-11-29 | Production of wavelength converter element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04199136A (en) |
-
1990
- 1990-11-29 JP JP33402090A patent/JPH04199136A/en active Pending
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