JPH04196535A - Cleaning equipment - Google Patents

Cleaning equipment

Info

Publication number
JPH04196535A
JPH04196535A JP33131590A JP33131590A JPH04196535A JP H04196535 A JPH04196535 A JP H04196535A JP 33131590 A JP33131590 A JP 33131590A JP 33131590 A JP33131590 A JP 33131590A JP H04196535 A JPH04196535 A JP H04196535A
Authority
JP
Japan
Prior art keywords
tank
cleaning
liquid
treatment liquid
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP33131590A
Other languages
Japanese (ja)
Other versions
JP2949644B2 (en
Inventor
Yuji Tanaka
裕司 田中
Yuji Kamikawa
裕二 上川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP33131590A priority Critical patent/JP2949644B2/en
Publication of JPH04196535A publication Critical patent/JPH04196535A/en
Application granted granted Critical
Publication of JP2949644B2 publication Critical patent/JP2949644B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To exclude influence of dust and the like generated at the time of operating a pump upon an object to be processed, by installing a treatment liquid tank which is arranged at a position where a treatment liquid supply port is higher than a cleaning treatment tank, stores treatment liquid, and makes the treatment liquid drip into the cleaning treatment chamber by the effect of self-weight. CONSTITUTION:A constant amount of cleaning treatment liquid 68 is supplied from a treatment liquid tank 60 to a cleaning treatment tank 26, 30, in the manner in which the total amount of liquid in the treatment liquid tank 60 is supplied through a quartz tube 60C by self-weight drop caused by head difference. This supply is executed before a semiconductor wafer is dipped into the tank 26, 30. The temperature of the treatment liquid in the tank 26, 30 in controlled, and set at a specified value, and then the semiconductor wafer is dipped in the treatment liquid. A pump 62 is connected with a large storage tank 72 which contains the cleaning treatment liquid such as ammonia and hydrofluoric acid. From the storage tank 72, the cleaning treatment liquid is pressurized, sent, and supplied to the treatment liquid tank 60. The pump 62 and the storage tank 72 are arranged in positions distant from the cleaning treatment tank 26, 30, and in an isolated state from the cleaning equipment.

Description

【発明の詳細な説明】 [発明の目的コ (産業上の利用分野) 本発明は、洗浄装置に関し、特に洗浄処理槽への処理液
の供給方式の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention (Industrial Application Field) The present invention relates to a cleaning device, and particularly to an improvement in a method for supplying processing liquid to a cleaning processing tank.

(従来の技術) この種の洗浄装置として、例えば、半導体ウェハ製造装
置における洗浄装置がある。
(Prior Art) An example of this type of cleaning apparatus is a cleaning apparatus used in a semiconductor wafer manufacturing apparatus.

この半導体ウェハ製造装置における洗浄装置は、洗浄処
理槽内に被処理体を設置して、洗浄処理槽内に処理液を
供給して洗浄処理を行なうようにしている。
In this cleaning device in a semiconductor wafer manufacturing apparatus, an object to be processed is placed in a cleaning tank, and a processing liquid is supplied into the cleaning tank to perform the cleaning process.

この場合、洗浄処理液として純水を用いる場合には、工
場内に純水供給システムを備えているため、その純水供
給システムを用いて洗浄処理槽内に純水を供給するよう
にしている。
In this case, if pure water is used as the cleaning treatment liquid, the factory is equipped with a pure water supply system, so the pure water supply system is used to supply pure water into the cleaning treatment tank. .

これに対しフッ酸(HF)やアンモニアなどのような工
場で供給することのできない薬液を洗浄処理液として用
いる場合には、洗浄処理槽の近辺に薬液を供給するため
のポンプを設置し、このポンプにて洗浄処理液を洗浄処
理槽内に圧送供給するようにしていた。
On the other hand, if a chemical solution such as hydrofluoric acid (HF) or ammonia that cannot be supplied at a factory is used as a cleaning treatment liquid, a pump to supply the chemical solution is installed near the cleaning treatment tank. A pump was used to pump the cleaning solution into the cleaning tank.

(発明が解決しようとする課題) 一般に、超LSIの製造にあっては、製品の品質、製品
歩留まり向上のため製造処理をクリーンな雰囲気で行な
わなければならない。そして上述の工場内における純水
等の供給システムを使用することができる場合にはクリ
ーンな雰囲気の状態を維持することが可能である。
(Problems to be Solved by the Invention) Generally, in the manufacture of VLSIs, the manufacturing process must be performed in a clean atmosphere in order to improve product quality and product yield. If the above-mentioned in-factory supply system for pure water or the like can be used, it is possible to maintain a clean atmosphere.

これに対して、上述のような工場内の供給システムを使
用することができないフッ酸(HF)、アンモニアなど
の薬液を洗浄処理液として使用する場合には、洗浄処理
液圧送用のポンプが必要となり、しかもこのポンプは洗
浄処理槽の近辺に置かなければ十分な効果が期待できな
いのである。
On the other hand, if a chemical solution such as hydrofluoric acid (HF) or ammonia is used as a cleaning treatment liquid, for which the in-factory supply system as described above cannot be used, a pump is required to pressure-feed the cleaning treatment liquid. Moreover, this pump cannot be expected to be fully effective unless it is placed near the cleaning treatment tank.

ところが、上記ポンプを作動させた場合ポンプの作動に
よって塵埃か発生し上述のクリーンな雰囲気を汚染する
原因となり、半導体ウェハの品質低下、歩留まり低下を
きたすという問題があった。
However, when the pump is operated, dust is generated due to the operation of the pump, causing contamination of the above-mentioned clean atmosphere, resulting in a problem in that the quality of semiconductor wafers and the yield are lowered.

ポンプを遠ざけた場合には、ポンプから処理槽に至る配
管が長くなり、圧力損失が大きくなって供給効率が低下
してしまう。
If the pump is moved away, the piping from the pump to the processing tank becomes long, resulting in increased pressure loss and reduced supply efficiency.

また、洗浄処理槽に供給する洗浄処理液の積置は、ポン
プにのみ依存している状態となっていたため、ポンプに
よる洗浄処理液の供給量の誤差が生じやすく、また誤差
が累積して洗浄処理液の無駄使いとなるという問題があ
り、この問題はポンプを処理槽より遠ざけるほど顕著で
ある。
In addition, since the storage of the cleaning solution supplied to the cleaning treatment tank was dependent only on the pump, errors in the amount of cleaning solution supplied by the pump were likely to occur, and errors could accumulate, causing the cleaning There is a problem that processing liquid is wasted, and this problem becomes more pronounced as the pump is moved farther from the processing tank.

そこで本発明は、工場内の処理液等の供給システムを使
用することのできない薬液を処理液として用いる場合に
おいて、ポンプによるクリーンな雰囲気の汚染を防止し
、かつ供給する処理液の秤量を正確にすることのできる
洗浄装置を提供することを、その解決課題としている。
Therefore, the present invention prevents contamination of a clean atmosphere by a pump and accurately weighs the supplied processing liquid when using a chemical liquid as a processing liquid for which the supply system such as a processing liquid in a factory cannot be used. The problem to be solved is to provide a cleaning device that can do the following.

[発明の構成] (課題を解決するための手段) 本発明の洗浄装置は、被処理体を内部に設けて被処理体
に薬品処理する洗浄処理槽と、前記洗浄処理槽よりも処
理液供給口が高い位置に設けられ、かつ処理液を貯めて
前記洗浄処理槽に処理液を自重落下させる処理液タンク
とを設けたことを特徴とする。
[Structure of the Invention] (Means for Solving the Problems) The cleaning apparatus of the present invention includes a cleaning treatment tank in which an object to be treated is provided and the object to be treated is treated with a chemical, and a treatment liquid supplied from the cleaning treatment tank. The present invention is characterized in that it is provided with a processing liquid tank whose opening is provided at a high position, and which stores the processing liquid and allows the processing liquid to drop under its own weight into the cleaning processing tank.

(作 用) 上記構成の本発明の洗浄装置は、洗浄処理槽よりも高い
位置に配設した処理液タンクにポンプにより処理液を供
給し、この処理液タンクに処理液を貯め、処理液が所定
量に達した状態で洗浄処理槽に処理液タンクより処理液
を自重で落下させる。
(Function) The cleaning device of the present invention having the above configuration uses a pump to supply the treatment liquid to the treatment liquid tank disposed at a higher position than the cleaning treatment tank, stores the treatment liquid in this treatment liquid tank, and stores the treatment liquid in the treatment liquid tank. When a predetermined amount has been reached, the treatment liquid is dropped from the treatment liquid tank into the cleaning treatment tank by its own weight.

この場合、洗浄処理槽への処理液の供給は処理液タンク
より処理液の自重でなされるようになっているため、ポ
ンプから処理液タンクへの処理液の供給は単に処理液タ
ンク内に処理液を貯めるだけで良く、そのため処理液タ
ンクの位置からポンプを遠ざけた状態でも十分にポンプ
による処理液の供給がなし得、従ってポンプ作動時に発
生する塵埃等による被処理体への影響をなくし、製品品
質の向上、歩留まりの向上に寄与することが可能となる
In this case, the processing liquid is supplied to the cleaning processing tank from the processing liquid tank using its own weight, so the processing liquid is simply supplied from the pump to the processing liquid tank. It is only necessary to store the liquid, and therefore the pump can sufficiently supply the processing liquid even when the pump is located far from the processing liquid tank.This eliminates the influence of dust, etc. generated when the pump is operating on the object to be processed. It is possible to contribute to improving product quality and yield.

(実施例) 以下、本発明を半導体ウェハ製造装置における洗浄装置
に適用した実施例について、図面を参照して説明する。
(Example) Hereinafter, an example in which the present invention is applied to a cleaning device in a semiconductor wafer manufacturing apparatus will be described with reference to the drawings.

第1図において、本実施例の半導体ウェハの洗浄装置は
、3つの洗浄処理ユニット10.12゜14を組合せて
構成されている。また、搬入側の処理ユニット10には
ローダ16が接続され、搬出側の処理ユニット14には
アンローダ18が接続されており、さらに洗浄処理ユニ
ット10゜12間及び洗浄処理ユニツ)12.14間に
、3ユニツトのいずれかに含まれる水中ローダ20か配
設されている。
In FIG. 1, the semiconductor wafer cleaning apparatus of this embodiment is constructed by combining three cleaning processing units 10.12.14. Further, a loader 16 is connected to the processing unit 10 on the carry-in side, an unloader 18 is connected to the processing unit 14 on the carry-out side, and further between the cleaning processing units 10 and 12 and between the cleaning processing units) 12 and 14. , an underwater loader 20 included in any of the three units is disposed.

搬入側の洗浄処理ユニット10は、中心位置に半導体ウ
ェハ22搬送用の回転搬送アーム24を配設すると共に
、その周囲てローダ16の正面及び回転搬送アーム24
の左隣に各々2つの洗浄処理槽26.28を配設するよ
うにしている。本実施例においては、洗浄処理1126
はアンモニア処理を行う薬品処理槽として用いられ、洗
浄処理槽28は水洗処理を行なうクイック・ダンプ・リ
ンス(QDR)処理槽として用いられている。
The cleaning processing unit 10 on the carry-in side has a rotary conveyance arm 24 for conveying semiconductor wafers 22 disposed at the center position, and the front side of the loader 16 and the rotary conveyance arm 24 are arranged around it.
Two cleaning tanks 26 and 28 are arranged on the left side of each tank. In this embodiment, the cleaning process 1126
is used as a chemical treatment tank for ammonia treatment, and the cleaning treatment tank 28 is used as a quick dump rinse (QDR) treatment tank for water washing.

中央の洗浄処理ユニット12は、中心位置に配設した回
転搬送アーム24の周囲て左右両側に水中ローダ20を
位置させ、その間の前後位置に各々2つの洗浄処理槽3
0.32を配設するようにしている。本実施例では、洗
浄処理槽30はフッ酸処理を行う薬品処理槽として用い
られ、洗浄処理槽32は水洗オーバーフロー処理槽とし
て用いられている。
The central cleaning processing unit 12 has underwater loaders 20 positioned on both left and right sides around a rotary transfer arm 24 disposed at the center, and two cleaning processing tanks 3 each at the front and rear positions between them.
0.32 is set. In this embodiment, the cleaning treatment tank 30 is used as a chemical treatment tank for performing hydrofluoric acid treatment, and the cleaning treatment tank 32 is used as a water washing overflow treatment tank.

搬出側の洗浄処理ユニット14は、中心位置に配設した
回転搬送アーム24の周囲で、アンローダ18の正面側
に洗浄処理槽34を配設すると共に、回転搬送アーム2
4の右隣に乾燥処理槽36を配設するようにしている。
The cleaning processing unit 14 on the unloading side has a cleaning tank 34 disposed on the front side of the unloader 18 around the rotary transport arm 24 arranged at the center position, and
A drying treatment tank 36 is disposed on the right side of the drying tank 4.

本実施例では、洗浄処理槽34は水洗ファイナルリンス
槽として用いられている。なお、各処理槽26.28.
30゜32.34.36は、例えば第2図に示すように
それぞれ独立したケース内に配置されている。
In this embodiment, the cleaning treatment tank 34 is used as a final rinse tank. In addition, each processing tank 26.28.
30°, 32, 34, and 36 are arranged in independent cases, as shown in FIG. 2, for example.

そして、2つのキャリア48上に載置された各々25枚
ずつの半導体ウェハ22がローダ16に搬送されてくる
と、ローダ16上で所謂オリフラ合せ機構によって半導
体ウェハ22のオリフラ合せがなされた後、突き上げ機
構により半導体ウェハ22が持上げられかつ寄せ合わせ
られるようになっている。
When the 25 semiconductor wafers 22 placed on each of the two carriers 48 are transferred to the loader 16, the orientation flats of the semiconductor wafers 22 are aligned on the loader 16 by a so-called orientation flat alignment mechanism. The semiconductor wafer 22 is lifted and brought together by the pushing up mechanism.

次いで、回転搬送アーム24が作動して、ローダ16上
から半導体ウェハ22のみを取り出し、洗浄処理槽26
へ半導体ウェハ22のみを受渡して洗浄処理を行なった
後洗浄処理槽26より半導体ウェハ22を受は取って洗
浄処理槽28、水中ローダ20へと送り順次洗浄処理を
施す。
Next, the rotary transfer arm 24 operates to take out only the semiconductor wafer 22 from the loader 16 and transfer it to the cleaning treatment tank 26.
After only the semiconductor wafers 22 are transferred to and subjected to cleaning processing, the semiconductor wafers 22 are received from the cleaning processing tank 26 and sent to the cleaning processing tank 28 and the underwater loader 20, where they are sequentially subjected to the cleaning processing.

その後、中間の処理ユニット12及び搬出側の処理ユニ
ット140回転搬送アーム24にて、洗浄処理槽30,
32、水中ローダ2o洗浄処理槽34、乾燥処理槽36
へと搬送してそれぞれ洗浄処理あるいは乾燥処理を施し
た後、アンローダ18に送られ、半導体ウェハ22が2
つのキャリア48に分けて搭載され、搬出されるように
なっている。
Thereafter, the cleaning treatment tank 30,
32, underwater loader 2o cleaning treatment tank 34, drying treatment tank 36
The semiconductor wafers 22 are transferred to the unloader 18, where they are subjected to cleaning or drying processing, and then transferred to the unloader 18, where the semiconductor wafers 22 are
It is designed to be loaded and carried out in two carriers 48.

また、クイック・ダンプ・リンスを行う洗浄処理槽28
.水中ローダ20及び水洗オーバーフロー処理槽32及
びファイナルリンス処理を行う洗浄処理槽34では、洗
浄処理液として純水を用いるようになっており、この純
水は工場内に予め設置されている純水供給システムによ
り供給されるものを使用するようになっている。
In addition, a cleaning treatment tank 28 that performs quick dump and rinse
.. The underwater loader 20, the washing overflow treatment tank 32, and the cleaning treatment tank 34 that performs the final rinse process use pure water as the cleaning liquid, and this pure water is supplied to a pure water supply installed in advance in the factory. It is supposed to use what is provided by the system.

そして、工場内に予め設置されている純水供給システム
による純水を用いない、アンモニヤやフッ酸(HF)を
洗浄処理液とするアンモニア処理用の洗浄処理槽26及
びフッ酸処理用の洗浄処理槽30ては、第3図に示すよ
うに洗浄処理処理槽26.30よりも高い位置に、アン
モニアやフッ酸等の洗浄処理液を溜める処理液タンク6
0を設け、このタンク60に洗浄処理液を圧送供給する
ポンプ62により供給するようにしている。
Then, a cleaning treatment tank 26 for ammonia treatment using ammonia or hydrofluoric acid (HF) as a cleaning treatment liquid and a cleaning treatment for hydrofluoric acid treatment without using pure water using a pure water supply system installed in advance in the factory. As shown in FIG. 3, the tank 30 includes a processing liquid tank 6 which stores a cleaning processing liquid such as ammonia or hydrofluoric acid at a higher position than the cleaning processing tank 26.30.
0 is provided, and the cleaning treatment liquid is supplied to this tank 60 by a pump 62 that pumps and supplies it.

前記処理液タンク60は、その内部の上部位置に上記ポ
ンプ62により処理液タンク60内に供給された洗浄処
理液64の液面位置を検出する液面検出センサ66を備
えると共に、処理液タンク60の底部に上記液面検出セ
ンサ66によって検出された液量のうち洗浄処理槽26
,30での処理に必要な所定量の液量をこえる余分な洗
浄処理液64を外部に排出するバルブ70を有するドレ
イン68を備え、このバルブ70は例えば前記センサ6
6の信号に基づき開閉される。すなわち、ドレイン68
は、上記液量検出センサ66によって検出された液量が
所定量をこえる場合に、バルブ70を開放余分な洗浄処
理液64を排出し得るようになっている。
The processing liquid tank 60 is provided with a liquid level detection sensor 66 at an upper position inside thereof for detecting the liquid level position of the cleaning processing liquid 64 supplied into the processing liquid tank 60 by the pump 62. Of the liquid amount detected by the liquid level detection sensor 66 at the bottom of the cleaning processing tank 26
, 30, and includes a drain 68 having a valve 70 for discharging to the outside excess cleaning liquid 64 exceeding a predetermined amount of liquid required for processing in the sensor 6.
It is opened and closed based on the signal No. 6. That is, the drain 68
When the amount of liquid detected by the liquid amount detection sensor 66 exceeds a predetermined amount, the valve 70 is opened and the excess cleaning liquid 64 can be discharged.

詳しくは、上記液面検出センサ66が洗浄処理液64を
検出後例えば2秒程度経過してからポンプ62による洗
浄処理液64の圧送供給を止める。
Specifically, after the liquid level detection sensor 66 detects the cleaning liquid 64, the pump 62 stops pumping and supplying the cleaning liquid 64, for example, after about two seconds have elapsed.

そして、小口径のオリフィスを有するバルブ70を開状
態にしてドレイン68がら処理液タンク60内の洗浄処
理液64を排出し、上記液面検出センサ66が検出しな
くなった位置で上記排出を止める。こうすることにより
、処理液タンク6゜内の洗浄処理液64の正確な秤量が
できる。上記排出量は、例えば、通常、洗浄処理液64
量3gに対して数十ml程度であり、排出頻度は、バッ
チ処理6回に対して1回程度である。
Then, the valve 70 having a small-diameter orifice is opened to discharge the cleaning processing liquid 64 in the processing liquid tank 60 through the drain 68, and the discharging is stopped at the position where the liquid level detection sensor 66 no longer detects the liquid. By doing so, it is possible to accurately weigh the cleaning treatment liquid 64 in the treatment liquid tank 6°. The above discharge amount is, for example, usually the cleaning treatment liquid 64
The amount is approximately several tens of ml per 3 g, and the discharge frequency is approximately once per six batch processes.

すなわち、上記処理液タンク6oの正確に秤量された洗
浄処理液64は、洗浄処理槽26.30に全量供給され
る。なお、この供給後、上記処理液タンク60には洗浄
処理液64が圧送供給されるが、この時には上記正確な
秤量は行わなくてもよい。
That is, the entire amount of the accurately weighed cleaning treatment liquid 64 in the treatment liquid tank 6o is supplied to the cleaning treatment tank 26.30. After this supply, the cleaning treatment liquid 64 is supplied under pressure to the treatment liquid tank 60, but at this time, the above-mentioned accurate weighing does not need to be carried out.

そして、洗浄処理槽26,30に半導体ウェハ22を浸
漬して洗浄処理する。洗浄処理を繰返すに併って洗浄処
理槽26.30中の洗浄処理峻64の量が徐々に減少し
、補充が必要な際には例えば図示しない定量ポンプによ
り処理液タンク60内の処理液の一部を適宜洗浄処理槽
26゜30に圧送供給して補充する。
Then, the semiconductor wafer 22 is immersed in the cleaning tanks 26 and 30 for cleaning treatment. As the cleaning process is repeated, the amount of the cleaning solution 64 in the cleaning tank 26, 30 gradually decreases, and when replenishment is required, the amount of processing liquid in the processing liquid tank 60 is increased by, for example, a metering pump (not shown). A portion of the water is appropriately supplied under pressure to the cleaning treatment tanks 26 and 30 to replenish it.

上記洗浄処理を繰返し、例えば6サイクル(6バツチ処
理)洗浄処理を行った後、洗浄処理槽26.30内の洗
浄処理液は、新液と交換するために廃棄される。この交
換の際に、上記説明の排出を行い、正確に秤量された新
液(洗浄処理液64)を洗浄処理槽26.30に供給す
る。
After repeating the above cleaning process, for example, six cycles (six batch processes), the cleaning solution in the cleaning tank 26.30 is discarded in order to be replaced with a new solution. At the time of this exchange, the discharge as described above is performed, and an accurately weighed new solution (cleaning treatment liquid 64) is supplied to the cleaning treatment tank 26.30.

なお、液量検出センサ66は、例えば静電容量センサで
構成されている。
Note that the liquid amount detection sensor 66 is composed of, for example, a capacitance sensor.

、  また、処理液タンク60の天井部には、フィルタ
ー6OAを介して外部と連通可能に構成され、例えば洗
浄処理液64が減少する時、処理液タンク60内部が負
圧になるのを防止する。
In addition, the ceiling of the processing liquid tank 60 is configured to be able to communicate with the outside via a filter 6OA, and prevents the inside of the processing liquid tank 60 from becoming negative pressure, for example, when the cleaning processing liquid 64 decreases. .

一方、処理液タンク60の底部には、耐薬性、低発塵タ
イプのエアーオペレイトバルブ60Bを介して洗浄処理
槽26.30へ洗浄処理液64を供給するためのノズル
、例えば、内面に液留りが発生しないような平滑な表面
の石英管60Cが取着されている。
On the other hand, at the bottom of the processing liquid tank 60, there is a nozzle for supplying the cleaning processing liquid 64 to the cleaning processing tank 26.30 via a chemical-resistant, low-dust generation type air operated valve 60B, for example, a liquid is installed on the inner surface. A quartz tube 60C with a smooth surface that does not cause stagnation is attached.

そして、上記処理液タンク60から洗浄処理槽26.3
0への洗浄処理液64の供給は、一定量の供給として処
理液タンク60内の全量か処理液タンク60内液の水頭
差による自重落下により石英管60Cから供給される。
Then, from the processing liquid tank 60 to the cleaning processing tank 26.3.
The cleaning processing liquid 64 is supplied as a fixed amount from the quartz tube 60C either by the entire amount in the processing liquid tank 60 or by falling under its own weight due to the water head difference of the liquid in the processing liquid tank 60.

この供給は、半導体ウェハ22を洗浄処理槽26.30
に浸漬する前に実施し、その後、洗浄処理槽26.30
中の処理液の温調を行って設定温度に設定した後、上記
半導体ウェハ22を処理液に浸漬する。
This supply supplies the semiconductor wafer 22 to the cleaning treatment tank 26.30.
After that, the cleaning treatment tank 26.30
After controlling the temperature of the processing liquid therein and setting it at a set temperature, the semiconductor wafer 22 is immersed in the processing liquid.

ポンプ62は、アンモニアやフッ酸等の洗浄処理液を収
容する大型の貯留タンク72に接続され、この貯留タン
ク72より洗浄処理液を上記処理液タンク60内に圧送
、供給するようになっている。
The pump 62 is connected to a large storage tank 72 that accommodates a cleaning treatment liquid such as ammonia or hydrofluoric acid, and the storage tank 72 pumps and supplies the cleaning treatment liquid into the treatment liquid tank 60. .

また、このポンプ62及び貯留タンク72は、洗浄処理
槽26.30と離れた位置に配設され、かつ洗浄装置と
隔絶された状態となっている。
Further, the pump 62 and the storage tank 72 are located apart from the cleaning treatment tank 26, 30, and are isolated from the cleaning device.

例えば、このポンプ62及び貯留タンク72は、洗浄処
理槽26.30を耐薬性の高い材料で用い、その上方か
らHEPAフィルターを通したクリーンなダウンフロー
を流すことで、完全に隔離された位置に配置されている
For example, the pump 62 and storage tank 72 can be placed in a completely isolated location by using cleaning treatment tanks 26, 30 made of highly chemical-resistant materials and by flowing clean downflow from above through HEPA filters. It is located.

また、図示していないが、純水の供給も、上記処理液供
給と同様の方法で、液量検出センサを使用した正確な秤
量を行った後、自重落下により槽へ供給する。
Although not shown, pure water is also supplied to the tank by falling under its own weight after accurate weighing using a liquid amount detection sensor in the same manner as for supplying the processing liquid.

このように、ポンプ62によって貯留タンク72内の洗
浄処理液を処理液タンク60内に圧送、供給して、処理
液タンク60内に洗浄処理液を一旦溜めるようにするこ
とにより、ポンプ62に正確な積置検出機能を持たせず
に済み、単に洗浄処理液の供給用とし寸のみ使用するこ
とで、ポンプ62を洗浄処理槽26.30と離して配役
可能とし洗浄処理中にポンプ62から生じる塵埃によっ
てクリーン雰囲気が汚染されるのを防止し半導体ウェハ
22に影響が及ばないようにすることが可能となる。
In this way, the cleaning treatment liquid in the storage tank 72 is pumped and supplied into the treatment liquid tank 60 by the pump 62, and the cleaning treatment liquid is temporarily stored in the treatment liquid tank 60, so that the pump 62 can be used accurately. There is no need to provide a storage detection function, and the pump 62 is used only for supplying the cleaning processing liquid, so that the pump 62 can be placed separately from the cleaning processing tank 26, 30, and the amount of water generated from the pump 62 during the washing processing can be removed. It is possible to prevent the clean atmosphere from being contaminated by dust and to prevent it from affecting the semiconductor wafer 22.

また、処理液タンク60に設けた液面検出センサ66に
て、1回の洗浄動作に必要な量に相当する処理液液面を
検出するとともに、余分な処理液をドレイン68より排
出することにより、所定の処理液の積置をポンプ精度に
依存せずに正確に設定でき、洗浄処理液の無駄をなくす
ことが可能となる。
In addition, a liquid level detection sensor 66 provided in the processing liquid tank 60 detects the processing liquid level corresponding to the amount required for one cleaning operation, and the excess processing liquid is discharged from the drain 68. , it is possible to accurately set the storage of a predetermined processing liquid without depending on pump accuracy, and it is possible to eliminate waste of cleaning processing liquid.

更に、正確な積置を得た後、処理液タンク60より、洗
浄処理液を自重て洗浄処理槽26,30に落下させるこ
とにより、ボンブレスの状態で洗浄処理ができ、余計な
塵埃の発生が防止できることとなるものである。
Furthermore, by dropping the cleaning treatment liquid from the treatment liquid tank 60 under its own weight into the cleaning treatment tanks 26 and 30 after obtaining accurate storage, the cleaning treatment can be performed in a bombless state, and unnecessary dust generation can be avoided. This can be prevented.

液面検出センサにて1回の洗浄動作に必要な量に相当す
る処理液の液面位置を検出しているので、ポンプ精度に
依存せずに処理液の正確な積置を得ることができ、処理
液の無駄をなくすことができるという効果がある。
Since the liquid level detection sensor detects the level position of the processing liquid equivalent to the amount required for one cleaning operation, accurate deposition of processing liquid can be obtained without depending on pump accuracy. This has the effect of eliminating waste of processing liquid.

[発明の効果コ 以上説明したように、本発明の洗浄装置は、洗浄処理槽
よりも高い位置に配設した処理液タンクにポンプを用い
て処理液を供給し、この処理液タンクより洗浄処理槽内
に処理液を自重で落下させて供給することとしたため、
ポンプを洗浄処理槽と離れた位置に設置して、処理液タ
ンクより洗浄処理槽への供給はボンプレスで処理液を供
給スることができ、その結果処理雰囲気をクリーン雰囲
気に維持することができ、製品品質の向上、歩留まりの
向上がなし得るという効果がある。
[Effects of the Invention] As explained above, the cleaning device of the present invention uses a pump to supply the treatment liquid to the treatment liquid tank disposed at a higher position than the cleaning treatment tank, and the cleaning treatment is carried out from this treatment liquid tank. Because we decided to supply the processing liquid by dropping it into the tank under its own weight,
By installing the pump at a location separate from the cleaning treatment tank, the treatment liquid can be supplied from the treatment liquid tank to the cleaning treatment tank using a bomb press, and as a result, the treatment atmosphere can be maintained in a clean atmosphere. This has the effect of improving product quality and yield.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例に係る洗浄装置の全体的構成
を示す平面図、 第2図は第1図の洗浄処理槽の状態を示す斜視図、 第3図は洗浄処理槽、処理液タンク及びポンプの状態を
示す構成図である。 26.30・・・洗浄処理槽、 60・・・処理液タンク、62・・・ポンプ、64・・
・処理槽、66・・・液量検出センサ、68・・ドレイ
ン。 代理人 弁理士 井  上   −(他1名)第2図
FIG. 1 is a plan view showing the overall configuration of a cleaning device according to an embodiment of the present invention, FIG. 2 is a perspective view showing the state of the cleaning treatment tank in FIG. 1, and FIG. 3 is a cleaning treatment tank and treatment It is a block diagram which shows the state of a liquid tank and a pump. 26.30...Cleaning treatment tank, 60...Processing liquid tank, 62...Pump, 64...
- Processing tank, 66...Liquid level detection sensor, 68...Drain. Agent Patent attorney Inoue - (1 other person) Figure 2

Claims (1)

【特許請求の範囲】 被処理体を内部に設けて被処理体に薬品処理する洗浄処
理槽と、 前記洗浄処理槽よりも処理液供給口が高い位置に設けら
れ、かつ処理液を貯めて前記洗浄処理槽に処理液を自重
落下させる処理液タンクとを設けたことを特徴とする洗
浄装置。
[Scope of Claims] A cleaning treatment tank in which an object to be treated is provided and the object to be treated is treated with a chemical; a treatment liquid supply port is provided at a higher position than the cleaning treatment tank, and the treatment liquid is stored in the cleaning treatment tank and the treatment liquid is stored in the cleaning treatment tank. A cleaning device characterized in that the cleaning treatment tank is provided with a processing liquid tank that allows the processing liquid to fall under its own weight.
JP33131590A 1990-11-28 1990-11-28 Liquid processing apparatus and liquid processing method Expired - Lifetime JP2949644B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP33131590A JP2949644B2 (en) 1990-11-28 1990-11-28 Liquid processing apparatus and liquid processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33131590A JP2949644B2 (en) 1990-11-28 1990-11-28 Liquid processing apparatus and liquid processing method

Publications (2)

Publication Number Publication Date
JPH04196535A true JPH04196535A (en) 1992-07-16
JP2949644B2 JP2949644B2 (en) 1999-09-20

Family

ID=18242313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP33131590A Expired - Lifetime JP2949644B2 (en) 1990-11-28 1990-11-28 Liquid processing apparatus and liquid processing method

Country Status (1)

Country Link
JP (1) JP2949644B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0675528A2 (en) * 1994-03-28 1995-10-04 Shin-Etsu Handotai Company Limited Method for rinsing wafers and rinsing apparatus
KR20180111649A (en) * 2017-03-30 2018-10-11 도쿄엘렉트론가부시키가이샤 Weighing apparatus, substrate liquid processing apparatus, weighing method, substrate liquid processing method and recording medium
JP2018174301A (en) * 2017-03-30 2018-11-08 東京エレクトロン株式会社 Weighing device, substrate liquid processing device, weighing method, substrate liquid processing method, and storage medium

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0675528A2 (en) * 1994-03-28 1995-10-04 Shin-Etsu Handotai Company Limited Method for rinsing wafers and rinsing apparatus
EP0675528A3 (en) * 1994-03-28 1997-05-28 Shinetsu Handotai Kk Method for rinsing wafers and rinsing apparatus.
US5881748A (en) * 1994-03-28 1999-03-16 Shin-Etsu Handotai Co. Ltd. Apparatus for rinsing wafers adhered with chemical liquid by use of purified water
KR20180111649A (en) * 2017-03-30 2018-10-11 도쿄엘렉트론가부시키가이샤 Weighing apparatus, substrate liquid processing apparatus, weighing method, substrate liquid processing method and recording medium
JP2018174301A (en) * 2017-03-30 2018-11-08 東京エレクトロン株式会社 Weighing device, substrate liquid processing device, weighing method, substrate liquid processing method, and storage medium

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