JPH04196219A - Ultrasonic cleaning tank - Google Patents
Ultrasonic cleaning tankInfo
- Publication number
- JPH04196219A JPH04196219A JP32695790A JP32695790A JPH04196219A JP H04196219 A JPH04196219 A JP H04196219A JP 32695790 A JP32695790 A JP 32695790A JP 32695790 A JP32695790 A JP 32695790A JP H04196219 A JPH04196219 A JP H04196219A
- Authority
- JP
- Japan
- Prior art keywords
- cleaning
- ultrasonic
- ultrasonic waves
- cleaned
- cleaning tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004506 ultrasonic cleaning Methods 0.000 title claims abstract description 12
- 238000004140 cleaning Methods 0.000 claims abstract description 43
- 239000004065 semiconductor Substances 0.000 abstract description 22
- 230000000694 effects Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 23
- 230000005855 radiation Effects 0.000 description 8
- 239000007788 liquid Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009365 direct transmission Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体ウェハの洗浄に用いられる超音波を利
用した超音波洗浄槽に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to an ultrasonic cleaning bath using ultrasonic waves used for cleaning semiconductor wafers.
第３図は従来の半導体ウェハの洗浄を行う超音波洗浄槽
の断面図である。図において（１）は被洗浄物である半
導体ウェハ、（２）は洗浄かご、（３）は洗浄液で、例
えばアンモニアと過酸化水素の水溶液である。（４）は
洗浄槽、（５）は洗浄かご（２）の位置決めのため洗浄
槽（４）内に設けられたカイト、（６）は超音波輻射板
、（７）は輻射板（６）に取付けられた超音波発振子、
（８）は洗浄かご（２）に設けられたウェハ（１）の支
持部、（１１） 、 （１２）は洗浄液（３）中での
超音波の伝達状態を示した矢印、（１３）は支持部（８
）により超音波かウェハ（１）に伝達されていないため
に生ずる影である。FIG. 3 is a sectional view of a conventional ultrasonic cleaning bath for cleaning semiconductor wafers. In the figure, (1) is a semiconductor wafer which is an object to be cleaned, (2) is a cleaning basket, and (3) is a cleaning liquid, for example, an aqueous solution of ammonia and hydrogen peroxide. (4) is a cleaning tank, (5) is a kite installed in the cleaning tank (4) for positioning the cleaning basket (2), (6) is an ultrasonic radiation plate, and (7) is a radiation plate (6). an ultrasonic oscillator mounted on the
(8) is the support part of the wafer (1) provided in the cleaning basket (2), (11) and (12) are arrows indicating the transmission state of ultrasonic waves in the cleaning liquid (3), and (13) is Support part (8
) is not transmitted to the wafer (1) by the ultrasonic wave.
次に動作について説明する。Next, the operation will be explained.
半導体ウェハ（１）を納めた洗浄かご（２）を洗浄１（
３）に浸漬する。洗浄槽（４）内の洗浄かご（２）はガ
イド（５）によって位置か決められる。次に、輻射板（
６）に取付けらｔた超音波振動子（７）に、高周波電力
を供給することにより超音波を発生させる。この発生し
た超音波は洗浄１（３）へ伝達され、物理的な力として
洗浄液（３）を振動させ、半導体ウェハ（１）の表面へ
作用することにより洗浄を行う。Cleaning basket (2) containing semiconductor wafers (1) is cleaned 1 (
3) Soak. The position of the cleaning basket (2) in the cleaning tank (4) is determined by the guide (5). Next, the radiation plate (
Ultrasonic waves are generated by supplying high-frequency power to the ultrasonic transducer (7) attached to (6). The generated ultrasonic waves are transmitted to the cleaning 1 (3), vibrate the cleaning liquid (3) as a physical force, and clean by acting on the surface of the semiconductor wafer (1).
ところで、半導体ウェハ（１）を納めた洗浄かご（２）
には、半導体ウェハ（１）を保持するため、図に示すよ
うな洗浄かご（２）の下部を狭くしたウェハ支持部（８
）を有している。この場合、半導体ウェハ（１）の中央
部は矢印（１１）に示すごとく超音波か十分伝達される
。一方、半導体ウェハ（１）の左右端は図示矢印（１２
）に示すごとく、超音波か支持部（８）により反射する
ことにより減衰し、その上方部へ伝達される割合が小さ
くなる。そのため半導体ウェハ（１）に支持部（８）の
影（１３）かてきる。その結果、半導体ウェハ（１）の
中央部と支持部の影（１３）部分との洗浄効果に著しい
差か生ずる。そのため、支持部の影（１３）にても洗浄
効果を十分に得ようとすれば、洗浄時間を長くする必要
がある。By the way, the cleaning basket (2) containing the semiconductor wafers (1)
In order to hold the semiconductor wafer (1), a wafer support part (8) with a narrow lower part of the cleaning basket (2) as shown in the figure is installed.
)have. In this case, the ultrasonic waves are sufficiently transmitted to the center of the semiconductor wafer (1) as shown by the arrow (11). On the other hand, the left and right ends of the semiconductor wafer (1) are indicated by arrows (12
), the ultrasonic wave is attenuated by being reflected by the support portion (8), and the proportion of the ultrasonic wave being transmitted to the upper portion thereof becomes smaller. Therefore, a shadow (13) of the support portion (8) appears on the semiconductor wafer (1). As a result, there is a significant difference in the cleaning effect between the central part of the semiconductor wafer (1) and the shadow part (13) of the support part. Therefore, in order to obtain a sufficient cleaning effect even in the shadow (13) of the support part, it is necessary to increase the cleaning time.
従来の超音波洗浄槽は以上のように構成されていたので
、被洗浄物である半導体ウェハに対し、洗浄かどの支持
部による影を十分に洗浄するのに長時間必要となり、洗
浄装置の処理能力か低下し、被洗浄物である半導体ウェ
ハの超音波が伝達されやすいところに通解射による損傷
が生じるという問題点があった。Conventional ultrasonic cleaning tanks are configured as described above, and it takes a long time to thoroughly clean the semiconductor wafers that are the objects to be cleaned. There is a problem in that the performance is reduced and damage occurs due to the transmission of radiation to areas of the semiconductor wafer to be cleaned where ultrasonic waves are easily transmitted.
この発明はＦ記のような問題点を解決するためになされ
たものて、被洗浄物である半導体ウェハの全面を均一に
短時間で洗浄かできる超音波洗浄槽を得ることを目的と
する。This invention was made to solve the problems mentioned in F, and its object is to provide an ultrasonic cleaning tank that can uniformly clean the entire surface of a semiconductor wafer, which is an object to be cleaned, in a short period of time.
この発明に係る超音波洗浄槽は、洗浄槽内にル射板を設
け、被洗浄物トの洗浄かこの支持部の４とに向け、他の
部分を通過した超音波を反射するようにしたものである
。In the ultrasonic cleaning tank according to the present invention, a radiation plate is provided in the cleaning tank, and the ultrasonic waves that have passed through other parts are reflected towards the cleaning of the object to be cleaned or the support part 4 of the object to be cleaned. It is something.
この発明における超音波洗浄槽内の反射板は、受けた超
音波を被洗浄物の洗浄かごの支持部の影に向けて反射す
ることにより、超音波輻射板からの超音波が直接伝達し
ない洗浄かごの支持部の影にも超音波を伝達させ、超音
波による洗浄効果を高める。The reflecting plate in the ultrasonic cleaning tank of this invention reflects the received ultrasonic waves toward the shadow of the support part of the cleaning basket of the object to be cleaned, thereby preventing the direct transmission of ultrasonic waves from the ultrasonic radiating plate. Ultrasonic waves are also transmitted to the shadow of the support part of the cage, increasing the cleaning effect of ultrasonic waves.
以下、この発明の一実施例を図について説明する。第１
図はこの発明の一実施例である超音波洗浄槽の断面図で
ある。なお、図中符号（１）〜（８） 、 （＋Ｄ
、 （１２）は前記従来のものと同一につき、その説
明は省略する。図において、（２１）は超音波反射板で
、図示の如く舟底形の反射面（２２）を持っている。（
２３）は反射面（２２）で反射された超音波の伝達の状
態を示した矢印である。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure is a sectional view of an ultrasonic cleaning tank that is an embodiment of the present invention. In addition, the symbols (1) to (8) in the figure, (+D
, (12) is the same as the conventional one, so the explanation thereof will be omitted. In the figure, (21) is an ultrasonic reflecting plate, which has a boat-shaped reflecting surface (22) as shown. (
23) is an arrow indicating the transmission state of the ultrasonic wave reflected by the reflecting surface (22).
反射板（２１）は反射面（２２）で効率良く超音波を反
射するよう、反射面（２２）の下面は洗浄液（３）に接
していても反射板（２１）の内部に洗浄液（３）がはい
らないような形状にしている。音速が速い物質が望まし
く、洗浄液（３）に浸すこともあり、反射板（２１）は
石英製である。また、反射面（２２）は第２図に示す幾
何光学的手法で決められる角度で舟底形を構成させ、反
射面（２２）の下面上面のどちらからの反射でも大差な
いよう均一な厚みを持たせている。The reflective plate (21) is designed to efficiently reflect ultrasonic waves on the reflective surface (22), so that even if the lower surface of the reflective surface (22) is in contact with the cleaning liquid (3), the cleaning liquid (3) is inside the reflective plate (21). It is shaped so that there is no need for it. A material with high sound velocity is desirable, and may be immersed in the cleaning liquid (3), and the reflector (21) is made of quartz. In addition, the reflective surface (22) has a boat bottom shape with an angle determined by the geometrical optical method shown in Figure 2, and has a uniform thickness so that there is no big difference in reflection from either the lower or upper surface of the reflective surface (22). I have it.
次に動作について説明する。Next, the operation will be explained.
半導体ウェハ（１）を納めた洗浄かご（２）を洗浄液（
３）に浸漬する。洗浄槽（４）内の洗浄かご（２）はガ
イド（５）によって位置か決められる。反射板（２１）
を洗浄がご（２）の上方所定の位置に固定する。次に超
音波輻射板（６）に取付けられた超音波振動子（７）に
、高周波電力を供給することにより超音波を発生させる
。この発生した超音波は洗浄液（３）を振動させ、半導
体ウェハ（１）の表面へ作用することにより洗浄を行う
。 また、半導体ウェハ（１）の中央部では超音波輻射
板（６）から直接超音波が矢印（１１）で示したように
伝達される。一方、半導体ウェハ（１）の左右端ては、
超音波輻射板（６）からの直接超音波は、支持部（８）
により矢印（１２）に示すごとく反射されてしまうが、
半導体ウェハ（１）の中央部を矢印（１１）て示すよう
に、通過した超音波を反射板（２１）の反射面り２２）
て、矢印り２３）で示すように反射させることにより、
超音波を伝達させ超音波による洗浄効果を高める。The cleaning basket (2) containing the semiconductor wafers (1) is placed in a cleaning solution (
3) Soak. The position of the cleaning basket (2) in the cleaning tank (4) is determined by the guide (5). Reflector (21)
Fix it in place above the washing machine (2). Next, high frequency power is supplied to the ultrasonic transducer (7) attached to the ultrasonic radiation plate (6) to generate ultrasonic waves. The generated ultrasonic waves vibrate the cleaning liquid (3) and act on the surface of the semiconductor wafer (1) to perform cleaning. Further, in the center of the semiconductor wafer (1), ultrasonic waves are directly transmitted from the ultrasonic radiation plate (6) as shown by the arrow (11). On the other hand, at the left and right ends of the semiconductor wafer (1),
The direct ultrasonic waves from the ultrasonic radiation plate (6) are transmitted to the support part (8).
The light is reflected as shown by arrow (12), but
As shown by the arrow (11) at the center of the semiconductor wafer (1), the ultrasonic waves that have passed are reflected by the reflective surface of the reflective plate (21) 22)
By reflecting it as shown by arrow 23),
Transmits ultrasonic waves to enhance the cleaning effect of ultrasonic waves.
（発明の効果〕
以上のようにこの発明によれば、洗浄槽内に反射板を設
け、超音波の伝達されない部分を無くすようにしたので
、被洗浄物である半導体ウェハ全面を均一に短時間て洗
浄することかできるという効果かある。(Effects of the Invention) As described above, according to the present invention, a reflecting plate is provided in the cleaning tank to eliminate the area where ultrasonic waves are not transmitted, so that the entire surface of the semiconductor wafer to be cleaned can be uniformly and quickly cleaned. It has the effect of being able to be washed with water.
第１図はこの発明の一実施例である超音波洗浄槽の断面
図、第２図は第１図の反射板の反射面の形状を決める手
法を示した部分拡大断面図、第３図は従来の超音波洗浄
槽の断面図である。
図において、（４）は洗浄槽、（２１）は超音波反射板
、（２２）は反射面を示す。
なお、図中、同一符号は同一、または相当部分を示す。Fig. 1 is a sectional view of an ultrasonic cleaning tank which is an embodiment of the present invention, Fig. 2 is a partially enlarged sectional view showing a method for determining the shape of the reflecting surface of the reflecting plate in Fig. 1, and Fig. 3 is FIG. 2 is a sectional view of a conventional ultrasonic cleaning tank. In the figure, (4) is a cleaning tank, (21) is an ultrasonic reflecting plate, and (22) is a reflecting surface. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
分に向け他の部分を通過した超音波を反射するように超
音波反射板を洗浄槽内に備えたことを特徴とする超音波
洗浄槽。An ultrasonic cleaning tank characterized in that the cleaning tank is equipped with an ultrasonic reflecting plate so as to reflect ultrasonic waves that have passed through other parts toward parts that are shielded by a cleaning basket of objects to be cleaned and are not irradiated with ultrasonic waves. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32695790A JPH04196219A (en) | 1990-11-27 | 1990-11-27 | Ultrasonic cleaning tank |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32695790A JPH04196219A (en) | 1990-11-27 | 1990-11-27 | Ultrasonic cleaning tank |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04196219A true JPH04196219A (en) | 1992-07-16 |
Family
ID=18193672
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32695790A Pending JPH04196219A (en) | 1990-11-27 | 1990-11-27 | Ultrasonic cleaning tank |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04196219A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5427622A (en) * | 1993-02-12 | 1995-06-27 | International Business Machines Corporation | Method for uniform cleaning of wafers using megasonic energy |
| WO2000027551A1 (en) * | 1998-11-11 | 2000-05-18 | Applied Materials, Inc. | Improved tank design for sonic wafer cleaning |
| US6460551B1 (en) | 1999-10-29 | 2002-10-08 | Applied Materials, Inc. | Megasonic resonator for disk cleaning and method for use thereof |
| CN1099325C (en) * | 1997-05-26 | 2003-01-22 | 索尼株式会社 | Ultrasonic cleaning apparatus |
| US6589092B2 (en) * | 2000-04-18 | 2003-07-08 | Kabushiki Kaisha Toshiba | Cleaning method and cleaning apparatus of shadow mask |
| JP2011155240A (en) * | 2009-12-28 | 2011-08-11 | Siltronic Ag | Ultrasonic cleaning method and ultrasonic cleaning apparatus of semiconductor wafer |
-
1990
- 1990-11-27 JP JP32695790A patent/JPH04196219A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5427622A (en) * | 1993-02-12 | 1995-06-27 | International Business Machines Corporation | Method for uniform cleaning of wafers using megasonic energy |
| US5579792A (en) * | 1993-02-12 | 1996-12-03 | International Business Machines Corporation | Apparatus for uniform cleaning of wafers using megasonic energy |
| CN1099325C (en) * | 1997-05-26 | 2003-01-22 | 索尼株式会社 | Ultrasonic cleaning apparatus |
| WO2000027551A1 (en) * | 1998-11-11 | 2000-05-18 | Applied Materials, Inc. | Improved tank design for sonic wafer cleaning |
| US6220259B1 (en) | 1998-11-11 | 2001-04-24 | Applied Materials, Inc. | Tank design for sonic wafer cleaning |
| US6460551B1 (en) | 1999-10-29 | 2002-10-08 | Applied Materials, Inc. | Megasonic resonator for disk cleaning and method for use thereof |
| US6589092B2 (en) * | 2000-04-18 | 2003-07-08 | Kabushiki Kaisha Toshiba | Cleaning method and cleaning apparatus of shadow mask |
| JP2011155240A (en) * | 2009-12-28 | 2011-08-11 | Siltronic Ag | Ultrasonic cleaning method and ultrasonic cleaning apparatus of semiconductor wafer |
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