JPH04195750A - Manufacture of magnetooptic recording medium - Google Patents

Manufacture of magnetooptic recording medium

Info

Publication number
JPH04195750A
JPH04195750A JP32197490A JP32197490A JPH04195750A JP H04195750 A JPH04195750 A JP H04195750A JP 32197490 A JP32197490 A JP 32197490A JP 32197490 A JP32197490 A JP 32197490A JP H04195750 A JPH04195750 A JP H04195750A
Authority
JP
Japan
Prior art keywords
layer
gdfecoti
film
recording medium
magneto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP32197490A
Other languages
Japanese (ja)
Other versions
JP2576285B2 (en
Inventor
Masaki Ito
雅樹 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP32197490A priority Critical patent/JP2576285B2/en
Publication of JPH04195750A publication Critical patent/JPH04195750A/en
Application granted granted Critical
Publication of JP2576285B2 publication Critical patent/JP2576285B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To form a reading layer and a writing layer having suitably weak exchange bond by flattening the surface of a GdFeCoTi film by sputter etching and forming a TbFeTi film thereon. CONSTITUTION:A silicon nitride protective layer 2 is formed, and argon gas is introduced to sputter a GdFeCoTi target to form a GdFeCoTi film 3. Then, the surface is sputter etched with the argon gas to relatively flat the surface of the GdFeCoTi film as a reading layer. Thereafter, the target is sputtered with the argon gas to form a writing layer having weak exchange bond with the reading layer. Thus, in a magnetic recording medium, the TbFeTi film is formed after it is flattened by sputter etching the GdFeCoTi surface. In this manner, an exchange bonding force operating between the reading layer of the GdFeCoTi film and the writing layer of the TbFeTi film is weakened.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光磁気記録媒体製造方法、特に、磁気光学効果
を利用してレーサー光により情報の記録・再生を行なう
光磁気記録媒体製造方法に関する。
[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for manufacturing a magneto-optical recording medium, and more particularly, to a method for manufacturing a magneto-optical recording medium in which information is recorded and reproduced using a laser beam using the magneto-optic effect. .

〔従来の技術〕[Conventional technology]

従来、光磁気記録媒体の記録特性、再生特性の向上を目
的として、光磁気記録層として交換結合力の働いた2層
の磁性膜を用いたものが提案されており(特開昭57−
78652号)、本発明者らもガドリニウム・鉄・コバ
ルト・チタンの非晶質合金からなる垂直磁化可能で高い
耐酸化性を有しかつ高いキュリー温度を示す再生特性の
よい低保磁力を有する読出層(以下、GdFeCoTi
層という)と、テルビウム・鉄・チタンの非晶質合金か
らなる垂直磁化可能で高い耐酸化性を有しかつ低いキュ
リー温度を示す記録特性のよい高保磁力を有する書込層
(以下、TbPeT i層という)とを順次積層し、少
ないレーザー光エネルギーでTbFeTi層に書き込ん
だビット(部分的磁化反転領域)を磁気光学効果の大き
いGdFeCoTi層に交換結合力により転写し、Tb
FeTi層の側から読み出すものを既に提案している(
特開平1−125609)。
Conventionally, with the aim of improving the recording and reproduction characteristics of magneto-optical recording media, it has been proposed to use a two-layer magnetic film with an exchange coupling force as the magneto-optical recording layer (Japanese Patent Application Laid-Open No. 1983-1989).
No. 78652), the present inventors have also developed a readout device that is made of an amorphous alloy of gadolinium, iron, cobalt, and titanium, is perpendicularly magnetizable, has high oxidation resistance, exhibits a high Curie temperature, and has good reproduction characteristics and a low coercive force. layer (hereinafter referred to as GdFeCoTi
(hereinafter referred to as TbPeTi layer) and a writing layer (hereinafter referred to as TbPeTi layer), which is made of an amorphous alloy of terbium, iron, and titanium and has high coercive force with perpendicular magnetization, high oxidation resistance, and low Curie temperature, and good recording properties. The bits (partial magnetization reversal regions) written in the TbFeTi layer with a small laser beam energy are transferred to the GdFeCoTi layer with a large magneto-optic effect by exchange coupling force, and the TbFeTi layer is sequentially stacked.
We have already proposed something that reads out from the FeTi layer side (
JP-A-1-125609).

次に、従来の光磁気記録媒体製造方法について、図面を
用いて説明する。第3図は従来の一例を説明するための
製造工程図、第4図は第3図に示す従来例を用いて光磁
気記録媒体の概略断面図である。
Next, a conventional method for manufacturing a magneto-optical recording medium will be described with reference to the drawings. FIG. 3 is a manufacturing process diagram for explaining a conventional example, and FIG. 4 is a schematic cross-sectional view of a magneto-optical recording medium using the conventional example shown in FIG.

図において、1は基板、2は保護層、23はガドリニウ
ム・鉄・コバルト・チタン(GdFeC。
In the figure, 1 is a substrate, 2 is a protective layer, and 23 is gadolinium/iron/cobalt/titanium (GdFeC).

Ti)の非晶質合金からなるGdFeCoTi層、24
はテルビウム・鉄・チタン(TbFeTi)の非晶質合
金からなTbFeTi層、25は保護層である。
GdFeCoTi layer consisting of an amorphous alloy of Ti), 24
25 is a TbFeTi layer made of an amorphous alloy of terbium-iron-titanium (TbFeTi), and 25 is a protective layer.

基板lとしてはフォトポリマー(以下2Pと略称する)
のついたガラス板や、2Pのついたエポキシ樹脂板や、
ポリカーボネイト樹脂板等が用いられ、保護層2および
25としては窒化シリコンや酸窒化シリコン等が用いら
れる。このような光磁気記録媒体の各層の成膜は通常ス
パッタ装置が用いられる。
The substrate l is a photopolymer (hereinafter abbreviated as 2P)
Glass plate with , epoxy resin plate with 2P,
A polycarbonate resin plate or the like is used, and the protective layers 2 and 25 are made of silicon nitride, silicon oxynitride, or the like. A sputtering device is usually used to form each layer of such a magneto-optical recording medium.

従来の光磁気記録媒体の製造方法は、第3図に示すよう
に、基板製造工程aて基板lをスパッタ装置内に装着し
て、スパッタ装置真空排気工程すで真空排気した後に、
基板スパッタエツチングエ程Cて基板1永スバツタニツ
チンクし保護層成膜工程dで保護層2を成膜し、次にG
dFeCoT i層成膜工程eでGdFeCoTi層2
3を成膜し、次にTbFeTi層成膜工程gでTbFe
Ti層24を成層上4最後に保護層成膜工程りで保護層
25を成膜し、このようにして製造された光磁気記録媒
体をスパッタ装置から光磁気記録媒体取出工程jで取り
出すものである。
As shown in FIG. 3, the conventional method for manufacturing a magneto-optical recording medium is that after the substrate manufacturing process a, the substrate l is mounted in a sputtering apparatus, and after the sputtering apparatus has been evacuated in the evacuation process,
In the substrate sputter etching step C, the substrate 1 is etched, and in the protective layer forming step d, a protective layer 2 is formed, and then in the step G
GdFeCoTi layer 2 in the dFeCoT i layer deposition step e.
3, and then in the TbFeTi layer forming step g
Finally, a protective layer 25 is formed on the Ti layer 24 in a protective layer forming step, and the magneto-optical recording medium thus produced is taken out from the sputtering apparatus in a magneto-optical recording medium take-out step j. be.

なお、保護層2を成膜する前に基板と保護層との付着力
を強めるために基板表面を少しスパッタエツチングした
がこれは省略してもよい。
Note that before forming the protective layer 2, the surface of the substrate was slightly sputter-etched in order to strengthen the adhesion between the substrate and the protective layer, but this may be omitted.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

しかしながら、このような上述した従来の光磁気記録媒
体製造方法で製造した光磁気記録媒体は、作製するスパ
ッタ装置の違いによりピットエラーレイト (BER)
がよくなったり悪くなったりするという問題があった。
However, magneto-optical recording media manufactured by the conventional magneto-optical recording medium manufacturing method described above have a pit error rate (BER) due to differences in the sputtering equipment used to manufacture them.
The problem was that it sometimes got better and sometimes worse.

本発明者らはこの問題を解決すへく鋭意検討した結果、
BERが悪くなるのは読出層と書込層との間に働く交換
結合力が強すぎるためであることを見出し、本発明に至
った。
As a result of intensive study by the inventors to solve this problem,
It has been discovered that the reason for the poor BER is that the exchange coupling force acting between the reading layer and the writing layer is too strong, and the present invention has been achieved.

〔課題を解決するための手段〕[Means to solve the problem]

本発明の光磁気記録媒体の製造方法は、ガドリニウム・
鉄・コバルト・チタンの非晶質合金からなる垂直磁化可
能で高キュリー点を有する低保磁力層と、テルビウム・
鉄・チタンの非晶質合金からなる垂直磁化可能で低キュ
リー点を有する高保磁力層とを順次積層し、該低保磁力
層と該高保磁力層とは交換結合力を働かせる光磁気記録
媒体の製造方法であって、前記高保磁力層は前記低保磁
力層の表面をスパッタエツチングすることにより平坦化
したのち成膜することにより前記低保磁力層と前記高保
磁力層との間に働く交換結合力を弱くするように構成さ
れる。
The method for manufacturing a magneto-optical recording medium of the present invention includes gadolinium
A low coercive force layer made of an amorphous alloy of iron, cobalt, and titanium that can be perpendicularly magnetized and has a high Curie point, and a
A magneto-optical recording medium in which a high coercive force layer made of an amorphous alloy of iron and titanium that can be perpendicularly magnetized and has a low Curie point is sequentially laminated, and the low coercive force layer and the high coercive force layer exert an exchange coupling force. In the manufacturing method, the high coercive force layer is formed after flattening the surface of the low coercive force layer by sputter etching, thereby forming an exchange coupling between the low coercive force layer and the high coercive force layer. Constructed to reduce force.

ご実施例〕 次に、本発明の実施例について図面を参照して説明する
Embodiments Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の一実箆例を説明するための製造工程図
であり、第2図は第1図に示す実施例を用いて製造され
た光磁気記録媒体の概略断面図である。
FIG. 1 is a manufacturing process diagram for explaining an example of the present invention, and FIG. 2 is a schematic cross-sectional view of a magneto-optical recording medium manufactured using the embodiment shown in FIG.

図において、1は基板、2は保護層であり、3はGci
FeCoTiの非晶質合金を成膜したのちその表面を少
しスパッタエツチングすることにより平坦化して読出層
としたものであり、4はその上に成膜したTbFeTi
の非晶質合金からなる書込層、5はその上に成膜した保
護層である。
In the figure, 1 is the substrate, 2 is the protective layer, and 3 is the Gci
After forming a film of an amorphous FeCoTi alloy, the surface was flattened by a little sputter etching to form a readout layer.
5 is a writing layer made of an amorphous alloy, and 5 is a protective layer formed thereon.

本発明の光磁気記録媒体製造方法で製造した光磁気記録
媒体はTbFeTiの成膜を、GdFeCoTi表面を
スパッタエツチングすることにより平坦化したのちに行
なうことにより、GdFeCoT i膜の読出層とTb
FeTi膜の書込層との間に働く交換結合力が弱くなる
現象を利用している。
The magneto-optical recording medium manufactured by the magneto-optical recording medium manufacturing method of the present invention is formed by forming a TbFeTi film after flattening the GdFeCoTi surface by sputter etching.
It utilizes the phenomenon in which the exchange coupling force acting between the FeTi film and the writing layer becomes weaker.

膜表面をスパッタエツチングすると、本発明者らが行な
った実験の範囲では一般的に膜表面は平坦となるようで
ある。この確認はレプリカ法により約20万倍の透過型
電子顕微鏡写真により行なった。平坦となる理由は、ス
パッタエツチングを行なっているアルゴンイオンの膜表
面への入射角度が垂直入射された以外にも種々の角度を
もっているためと思われる。
When the film surface is sputter-etched, it appears that the film surface generally becomes flat according to the experiments conducted by the present inventors. This confirmation was carried out using transmission electron micrographs at a magnification of approximately 200,000 times using the replica method. The reason for the flatness is thought to be that the argon ions during sputter etching are incident on the film surface at various angles other than perpendicular.

GdFeCoTi膜表面をスパッタエツチングすること
により平坦化したのちにTbFeT iを成膜する場合
にスパッタエツチングしないときよりも交換結合力が弱
くなる理由は定かではないが、TbFeTi膜の膜成長
時に下地表面形状によって誘導形成される磁気特性が異
なるためと思われる。この性質は材料によって異なる。
It is not clear why the exchange coupling force becomes weaker when TbFeTi is formed after flattening the surface of the GdFeCoTi film by sputter etching than when sputter etching is not performed, but the shape of the underlying surface during the growth of the TbFeTi film is not clear. This is thought to be due to the difference in the magnetic properties induced by the two. This property varies depending on the material.

なお、成膜するスパッタ装置によって交換結合力が異な
る理由は読出層形成後から書込層形成までの間の膜表面
の雰囲気が一定ではないためと思われる。
Note that the reason why the exchange coupling force differs depending on the sputtering apparatus used for film formation is thought to be that the atmosphere on the film surface is not constant from after the readout layer is formed until the writing layer is formed.

次に、本発明の実施例について、図面を参照しながら具
体的に説明する。
Next, embodiments of the present invention will be specifically described with reference to the drawings.

第1図に示すように、基板装着工程aで基板lをスパッ
タ装置内に装着し、スパッタ装置真空排気工程りで3 
X I O−’Torr以下に真空排気後、基板スパッ
タエツチング工程Cてアルゴンガスを導入して基板1を
およそ10人程度スパッタエツチングし、ひきつづき保
護層成膜工程dてアルゴンと窒素との混合カスを導入し
てシリコンターゲットを反応性スパッタすることにより
800人厚0窒化シリコンの保護層2を形成した。次に
、GdFeCoTi層成膜工程eてアルゴンガスを導入
してG d F e Co T iターゲットをスパッ
タすることにより原子%で、234対62.8対12.
5対1.3 はのGdFeCoTi膜3でおよそ210人厚0膜を形
成し、次にGdFeTiff1tスパツタxツチング工
程dでこの表面をアルゴンガスでおよそ10人程度スパ
ッタエツチングしてG’dFeC。
As shown in FIG. 1, the substrate l is mounted in the sputtering equipment in the substrate mounting step a, and the sputtering equipment is vacuum evacuated in step 3.
After evacuation to below X I O-'Torr, in the substrate sputter etching process C, argon gas is introduced and the substrate 1 is sputter etched by about 10 people, and then in the protective layer forming process D, a mixed gas of argon and nitrogen is used. A protective layer 2 of silicon nitride with a thickness of 800 mm was formed by reactive sputtering of a silicon target. Next, in the GdFeCoTi layer forming step e, argon gas was introduced and a G d Fe Co Ti target was sputtered, so that the ratio in atomic % was 234:62.8:12.
A GdFeCoTi film 3 with a ratio of 5:1.3 is formed to have a thickness of about 210 mm, and then in the GdFeTiff1t sputtering step d, this surface is sputter-etched with argon gas to form G'dFeC.

Ti膜表面を比較的平坦にして読出層とした。しかる後
TbFeTi層成膜工程gにおいてアルゴンカスてTb
FeTiターゲットをスパッタすることにより原子%で
20,0対78,4対16のTbFeTi膜4でおよそ
1000人厚の入金形成し、前記読出層と弱く交換結合
した書込層を形成した。
The surface of the Ti film was made relatively flat to serve as a readout layer. After that, in the TbFeTi layer forming step g, the Tb
By sputtering a FeTi target, a TbFeTi film 4 with a ratio of 20.0 to 78 and 4 to 16 atomic % was deposited to a thickness of about 1000 layers to form a writing layer weakly exchange-coupled with the reading layer.

最後に、保護層成膜工程りてアルゴンと窒素との混合ガ
スでシリコンターゲットを反応性スパッタすることによ
り800人厚0窒化シリコンの保護層5を形成した。こ
のようにして製造された光磁気記録媒体は光磁気記録媒
体取出工程1でスパッタ装置の外に取り出される。
Finally, in a protective layer forming step, a silicon target was reactively sputtered using a mixed gas of argon and nitrogen to form a protective layer 5 of silicon nitride having a thickness of 800 mm. The magneto-optical recording medium thus manufactured is taken out of the sputtering apparatus in a magneto-optical recording medium removal step 1.

この製造された光磁気記録媒体のカーヒステリシスルー
プは、150℃においてTbFeTi膜をつけていない
ときのようなループ形状を示し、交換結合力を利用した
光磁気記録媒体として望ましいものであった。
The Kerr hysteresis loop of the produced magneto-optical recording medium exhibited a loop shape similar to that when no TbFeTi film was attached at 150° C., and was desirable as a magneto-optical recording medium utilizing exchange coupling force.

TbFeTi膜をつけていない場合のループ形状に似て
いるということはGdFeCoTi膜とTbFeTi膜
との交換結合力が弱くなっていることを意味している。
The fact that the loop shape is similar to that without the TbFeTi film means that the exchange coupling force between the GdFeCoTi film and the TbFeTi film is weak.

比較のために、GdFeCoTi膜表面をスパッタエツ
チングせずにその上にTbFeT igを形成して作製
した光磁気記録媒体では150℃てもTbFeT i膜
の影響をうけて角形成のよいループのままであり、交換
結合力がかなり強く作製されていた。
For comparison, a magneto-optical recording medium fabricated by forming TbFeTi on the surface of the GdFeCoTi film without sputter etching remained a well-formed loop even at 150°C due to the influence of the TbFeTi film. The exchange coupling force was quite strong.

このような状態は読出層の磁化の向きにより書込層への
磁化の書込みが影響をうけるので、光磁気記録媒体とし
ては望ましくない。
Such a state is not desirable for a magneto-optical recording medium because writing of magnetization into the writing layer is affected by the direction of magnetization in the reading layer.

上記実施例の光磁気記録媒体を光デイスク評価装置でB
ER評価したところ良好であったが、比較例で作製した
光磁気記録媒体は不充分であった。
The magneto-optical recording medium of the above example was tested with an optical disk evaluation device.
Although the ER evaluation was good, the magneto-optical recording medium prepared in the comparative example was unsatisfactory.

なお、上述した実施例では基板スパッタエツチング工程
を行なう例を示したが、これは基板と保護層との付着力
を強めるためのもので、必ずしも必要なものではない。
Incidentally, in the above-described embodiments, an example was shown in which a substrate sputter etching process was performed, but this is for strengthening the adhesion between the substrate and the protective layer, and is not necessarily necessary.

〔発明の効果〕〔Effect of the invention〕

本発明の光磁気記録媒体製造方法は、GdFeCoTi
膜の表面をスパッタエツチングして平坦にし、その上に
TbFeTi膜を形成することにより、交換結合力が適
度に弱い読出層と書込層を形成できるため、記録特性・
再生特性がともによい光磁気記録媒体の製造することが
できるという効果がある。
The method for manufacturing a magneto-optical recording medium of the present invention includes a method for manufacturing a GdFeCoTi
By sputter etching the surface of the film to make it flat and forming a TbFeTi film on it, it is possible to form a reading layer and a writing layer with moderately weak exchange coupling forces, resulting in improved recording characteristics.
This has the effect that a magneto-optical recording medium with good reproduction characteristics can be manufactured.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例を説明するための製造工程図
、第2図は第1図に示す実施例を用いて製造された光磁
気記録媒体の概略断面図、第3図は従来の一例を説明す
るための製造工程図、第4図は第3図に示す従来例を用
いて製造された光磁気記録媒体の概略断面図である。 1・・・・基板、2,5.25・・・・・・保護層、3
゜23・・・・・・GdFeCoTi層、4 、24 
・−・−T bFeTi層、 a・・・・・・基板装着工程、b・・・・・スパッタ装
置真空排気工程、C・・ ・基板スバッタエッチング工
程、d・・・・・・保護層成膜工程、e・・・・・Gd
FeCoT i層成膜工程、f・・・・・GdFeCo
Ti層スパッタエッチング工程、g・・・・・・TbF
eTi層成膜工程、h・・・・・保護層成膜工程、l・
・・・・光磁気記録媒体取出工程。 代理人 弁理士  内 原   晋 第j図
FIG. 1 is a manufacturing process diagram for explaining one embodiment of the present invention, FIG. 2 is a schematic sectional view of a magneto-optical recording medium manufactured using the embodiment shown in FIG. 1, and FIG. 3 is a conventional FIG. 4 is a manufacturing process diagram for explaining one example, and is a schematic cross-sectional view of a magneto-optical recording medium manufactured using the conventional example shown in FIG. 1...Substrate, 2,5.25...Protective layer, 3
゜23...GdFeCoTi layer, 4, 24
・-・−T bFeTi layer, a... Substrate mounting process, b... Sputtering device vacuum evacuation process, C... - Substrate sputter etching process, d... Protective layer Film forming process, e...Gd
FeCoT i-layer film formation process, f...GdFeCo
Ti layer sputter etching step, g...TbF
eTi layer deposition process, h...protective layer deposition process, l.
...Magneto-optical recording medium ejection process. Agent Patent Attorney Susumu Uchihara Figure J

Claims (1)

【特許請求の範囲】[Claims] 基板の上に保護層を成膜する第1の保護層成膜工程と、
前記保護層の上にガドリニウム・鉄・コバルト・チタン
の非晶質合金からなる垂直磁化可能で高キュリー点を有
する低保磁力の読出層を形成するGdFeCoTi層成
膜工程と、このGdFeCoTi層をスパッタエッチン
グするGdFeCoTi層スパッタエッチング工程と、
前記GdFeCoTi層の上に、テルビウム・鉄・チタ
ンの非晶質合金からなる垂直磁化可能で低キュリー点を
有する高保磁力の書込層を形成するTbFeTi層成膜
工程と、前記TbFeTi層の上に保護層を形成する第
2の保護層成膜工程とを含むことを特徴とする光磁気記
録媒体製造方法。
a first protective layer forming step of forming a protective layer on the substrate;
A step of forming a GdFeCoTi layer on the protective layer to form a low coercive force readout layer made of an amorphous alloy of gadolinium, iron, cobalt, and titanium and capable of perpendicular magnetization and having a high Curie point, and a sputtering process of this GdFeCoTi layer. a GdFeCoTi layer sputter etching step;
On the GdFeCoTi layer, a TbFeTi layer forming step of forming a high coercive force writing layer made of an amorphous alloy of terbium, iron, and titanium and capable of perpendicular magnetization and having a low Curie point; A method for manufacturing a magneto-optical recording medium, comprising: a second protective layer forming step for forming a protective layer.
JP32197490A 1990-11-26 1990-11-26 Magneto-optical recording medium manufacturing method Expired - Lifetime JP2576285B2 (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
JP32197490A JP2576285B2 (en) 1990-11-26 1990-11-26 Magneto-optical recording medium manufacturing method

Publications (2)

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JPH04195750A true JPH04195750A (en) 1992-07-15
JP2576285B2 JP2576285B2 (en) 1997-01-29

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0552957A2 (en) * 1992-01-21 1993-07-28 Sharp Kabushiki Kaisha Magneto-optical recording medium and manufacturing method thereof
US5498485A (en) * 1992-01-21 1996-03-12 Sharp Kabushiki Kaisha Magneto-optical recording medium and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0552957A2 (en) * 1992-01-21 1993-07-28 Sharp Kabushiki Kaisha Magneto-optical recording medium and manufacturing method thereof
US5498485A (en) * 1992-01-21 1996-03-12 Sharp Kabushiki Kaisha Magneto-optical recording medium and manufacturing method thereof

Also Published As

Publication number Publication date
JP2576285B2 (en) 1997-01-29

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