JPH04192415A - Producing apparatus for semiconductor element by roll-to roll system - Google Patents

Abstract

PURPOSE:To make it possible to make efficient solar cells, etc., at low cost without damaging a substrate by transferring a long substrate between film formation chambers by moving the substrate in a gas gate together with transfer belts with the other face of the substrate abutting on the transfer belts. CONSTITUTION:Transfer belts 112 are arranged around rollers 111. Because the rollers 111 are arranged rotatably in the transfer direction of a substrate, the belts 112 therearound are in tight contact and moved together with a substrate 102 smoothly with little rub. The belts 112 at the right ends of the rollers 111 are returned to their left ends via their upper parts by a round move and brought into contact with the other face of the substrate 102 and move the substrate repeatedly. Thereby efficient solar cells, etc., excellent in transferability and having few cracks and little abnormal growth of film can be mass-produced without damaging a substrate.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a roll-to-roll type semiconductor device production apparatus for continuously forming semiconductor devices, etc. on a long substrate.
More specifically, the present invention relates to a semiconductor device production apparatus with an improved gas gate in a roll-to-roll method for continuously forming a functional deposited film, particularly an amorphous semiconductor film such as a photovoltaic device, on a long substrate. .

[Prior Art] In recent years, amorphous semiconductor devices, particularly solar cells, image input sensors, electrophotographic photoreceptors, etc. made of amorphous silicon (hereinafter abbreviated as RA-3iJ) have been put into practical use, and mass production is underway. It has become.

Such a-Si films are generally created using chemical deposition under reduced pressure (hereinafter abbreviated as rCVD), sputtering, vacuum evaporation, etc., but the CVD method in particular is widely used due to its good characteristics. has been done. In particular, currently a
- As a mass production device for producing Si solar cells, a roll-to-roll type production device is in practical use as a device excellent in terms of mass productivity, flexibility, etc. Below, we will give an example of solar cell production using roll-to-roll production equipment and provide an overview.

The production device continuously slides out a long substrate for forming an A-8L film from a bobbin wound into a roll to form at least an N-type A-5I layer, an L-type A-5I layer, and A plurality of layers, including p-type A-5i layers, etc., are formed in film formation chambers that are separate reaction vessels, and the substrate is heated while maintaining a reduced pressure state between each film formation chamber. gases that are supplied into each film-forming chamber and serve as raw materials for, for example, an n-type a-5i layer, a p-type a-5i layer, etc., can be mutually diffused. It is equipped with a connecting member (informally called a ``gas gate'' or ``gate'' in sheep) that has the function of preventing contamination.

FIG. 2 is a schematic diagram showing a roll-to-roll system for producing semiconductor devices such as A-81 solar cells. In FIG. 2, 201 is a long substrate (hereinafter referred to as Usually, a deformable conductive base is used, such as a thin plate made of stainless steel or aluminum, or a non-conductive thin plate coated with a conductive 8 film or the like. The base body 201 is wound around a circular bobbin 211 and installed in the unloading chamber 210.

The base body 201 fed out from the bobbin installed in the feeding chamber 210 is passed through a gas gate (U, simply "gate").
)220. N-type a-5i film formation chamber 230, gate 2
40.1 type a-5i film formation chamber 250, gate 260. The film passes through the p-type a-3i film forming chamber 270 and the gate 280, and is wound onto a winding bobbin 291 installed in the winding chamber 290.

230a, 250a, 270a are cathode electrodes,
High frequency power supplies 230b and 250b, respectively.

Power is applied from 270b, and a glow discharge is generated between the base 201 and the grounded base 201. 202a to 205a are each filled with a gas that is a raw material for forming the a-3i film, 202a is filled with S1) (4 gas, 203a is filled with H2 gas, 204a is filled with PH3 gas, and 205a is filled with B2H6 gas.

Each gas passes through on-off valves 202b to 205b and pressure reducers 202c to 205c to gas mixers 230c and 25.
0c, guided by 270c. Gas mixer 2300-27
The raw material gas with the desired flow rate and mixing ratio at 0c is
Gas is ejected into each film forming chamber through gas introduction lines 230d, 250d, and 270d. The gas introduced into the deposition chamber is
Exhaust devices 210e and 230e with variable exhaust speeds.

250e, 270e, and 290e, exhaust gas is evacuated while adjusting the pressure in each chamber to a desired level, and is led to an exhaust gas treatment device (not shown).

In addition, 23Of, 25Of, and 27Of are heaters for heating the substrate, and power supplies of 230g, 250g, and 270g, respectively.
More power is supplied.

Reference numerals 241 and 261 are parts that adjust the cross-sectional area of the opening of the gate, and narrow the gas flow path to reduce mutual diffusion of gas between the film forming chambers. Further, a gas that does not have a negative effect on the a-5i film formation, such as Ar, H2, He, etc., is supplied to the gate through gas inlet ports 242 and 262 into a cylinder 2.
06 through a pressure reducer 207 and flow rate regulators 208 and 209, and severely suppresses mutual diffusion of source gases in each film forming chamber.

The substrate 201 sent out from the delivery chamber 210 advances through each film forming chamber at a constant speed, and has n-type, 1-type, and p-type a on its surface.
-Si film is formed and finally enters the winding chamber 290.

First, in the n-type a-5i film forming chamber 230, the base body 201 is heated by the heater 230f to a desired temperature. Further, gases such as SIH4, H2, PH3, etc., which are raw materials for the n-type a-3i film, are mixed at optimum flow rates by the gas mixer 230c and introduced into the film forming chamber 230. At the same time, high frequency power is applied to the cathode 230a from 230b, causing a glow discharge between the cathode 230a and the base 201, and forming an n-type a-S i )li on the surface of the base 201.

Next, the substrate advances through the gate 240 and enters the l-type a-5i deposition chamber 250. In the film forming chamber 250, an optimum power is applied to S 1 [(a, H2 gas) which is set to the optimum flow rate as described above, and a desired l-type a-5i film is deposited on the n-type a-5i film.
Form an i-film. Similarly, the base 201 is connected to the gate 26.
0, p-type a-3i film forming chamber 270 and winding chamber 290
It is wound up on the inner pobbin 291. In this way, the roll-to-roll type production equipment can achieve an extremely high throughput because the substrates are successively passed through the n-type, l-type, and p-type film forming chambers.

On the other hand, in the case of such a roll-to-roll type solar cell production apparatus, the performance and structure of the gate are problematic. In order to create a highly efficient solar cell, it is necessary to form a high quality a-5i film with very little impurity. In order to allow the substrate to pass through the gate smoothly, the gate needs to have a wide cross-sectional area and a solid substrate support mechanism.On the other hand, in order to prevent the entry of impurities, a narrow gate cross-sectional area and a long gate are required. Require gate dimensions. Furthermore, a mechanism is required within the gate to support and transport the substrate without coming into contact with the surface of the substrate 201 on which the a-3i film is formed. In order to meet the above requirements, an example of a gate that has conventionally been used as a front chamber is shown in FIG.

In FIG. 3, 301 is a conductive substrate for forming a deposited film;
02 is a gate, 303 is a film forming chamber, 304 is a gate opening cross section adjustment member, 305 is a gate purge gas jet port,
A contact surface 306 is used to move the base while being in contact with the base, and is made of a material with low frictional resistance. 310
is a magnet for attracting substrates.

In the gate having the configuration shown in FIG. 3, the base 301 is made of a magnetic material, and the back surface of the base (the surface on which the a-5i film is not deposited, the top surface in this figure) is brought into contact with the magnet 310. Contact surface 306. Hereinafter, this type of gate will be abbreviated as "slide type J. At this time, the gate opening cross-section adjusting member 304 is narrowed to the minimum width that does not touch the base body 301, reducing the conductance,
It is designed to prevent diffusion and inflow of film forming gas between the plurality of film forming chambers 303. Furthermore, A from the purge gas outlet
Gases such as r, He, 82, etc. that do not adversely affect the film formation are introduced into the gate, and these gases have the function of pushing back the film formation gas in the film formation chamber that has entered the gate into the respective film formation chambers. This further reduces gas diffusion and contamination.

In the gate having the configuration shown in FIG. 3 described above.

Since the base 301 and the contact surface 306 are in wide contact and the cross-sectional area through which the gas passes is extremely small, it has the advantage of excellent gas separation (less diffusion and mixing).
On the other hand, since the base body and the contact surface move while rubbing, damage may sometimes occur on the rubbed surface, or minute irregularities may occur. When the substrate is damaged in this way, the deposited a-5i film cracks or holes are generated at the damaged location, resulting in a significant loss of function as an a-3i solar cell. Furthermore, when depositing the a-3i film over the damaged area, abnormal growth of the a-3i film occurs with the damaged area as a nucleus, and the a-5i film also grows.
It becomes impossible to perform the function as a solar cell. As a result, the yield of the entire production equipment is reduced, the throughput is reduced, and the cost of the completed A-5i solar cell is increased.

As described above, there is no conventional gate that satisfies all of the requirements for a gate, such as not causing damage to the substrate, excellent conveyance, and sufficient gas separation function. I didn't.

[Problems to be Solved by the Invention] The present invention overcomes the above-mentioned problems in the gate of production equipment for semiconductor devices such as A-31 solar cells using a roll-to-roll method, and eliminates damage to the base and improves efficiency. The purpose is to provide production equipment that enables the production of superior solar cells at low cost.

[Means for Solving the Problems 1] The present inventors have developed a gate that does not damage the substrate, has good conveyance properties, and has an excellent gas separation function, which has been difficult to achieve with conventional gates. As a result of intensive research into gates, we have completed the present invention.

That is, in order to achieve the above object, the present invention has a plurality of film-forming chambers and a gas gate that communicates between the film-forming chambers, and continuously and sequentially deposits a long substrate through the gas gate. In the roll-to-roll type semiconductor device production apparatus for forming a semiconductor device on one surface of the elongated substrate by feeding the film into the film forming chamber, the gas gate is provided inside the elongated substrate along the transport direction of the elongated substrate. A plurality of rollers each having a conveyor belt attached thereto are rotatably disposed, and the elongated base moves within the gas gate together with the belt with the other side of the base in contact with the conveyor belt. It is configured to be transported between membrane chambers.

The present invention will be explained in detail below.

In FIG. 1, 101 is a gate, 102 is a base, and 10
3 is a film forming chamber, 104 is a gate opening cross section adjustment member, 105
110 is a magnet, 111 is a roller, and 112 is a conveyor belt (hereinafter simply referred to as belt).

The base 102 is a magnetic material and is attracted to and held by the magnet 110. Gate opening cross section adjustment member 10
Narrowing the opening 4 and ejecting gate purge gas from the ejection port 105 to suppress diffusion and mixing of source gas between the film forming chambers 103 are similar to the conventional gate. In the present invention, the conveyor belt 1 is wound around the roller 111.
12 are installed. Therefore, the back surface (the top surface in this figure) of the base body comes into direct contact with the conveyor belt 112. Since the roller 111 is rotatably disposed along the conveyance direction of the substrate, the belt 112 attached to the roller 111 also moves smoothly, so that the conveyance belt and the substrate are in close contact with each other. They move all at once without running into each other. Hereinafter, this type of gate will be abbreviated as "belt type". Further, the belt that has reached the right end position of the roller 111 (the downstream part of the conveyance of the substrate) passes through the upper part of the roller, returns to the left end position of the roller, contacts a new surface of the substrate, and repeats the movement. In this configuration, since the base moves at almost the same speed as the belt, the base moves without slipping and there is little damage to the base, but the belt is made of a softer material than the base. By doing so, there will be almost no damage to the base. On the other hand, since the belt and the substrate are brought into close contact, the gap between them is small and the contact area is large, so the conductance is minimized and the deposition gas is not diffused or mixed between the deposition chambers. can also be suppressed to an extremely low level.

Therefore, by using the gate of the present invention, cracks, pinholes, and abnormal growth of the A-5I film, etc., caused by damage to the substrate and camellia scratches can be suppressed, and the film has excellent characteristics without the contamination of unnecessary gas atoms. solar cells etc. can be produced with high yield and high throughput, and the cost required for producing a-Si solar cells etc. can be significantly reduced.

The material of the belt used for the gate of the present invention is that it can be used in a vacuum and has little outgas.
Conditions such as being able to withstand the substrate temperature of 200°C to 350'C, which is the temperature required for depositing -3i films, etc., and being able to be deformed are required, but currently, materials that can be easily made by hand cannot be used. Suitable materials include polyimide films and the like.

The belt may be wrapped around the roller using tension without any processing, but for smooth belt feeding and rotation, perforations are drilled, and protrusions are also provided on the roller side so that they engage. design,
It is preferable to provide better transportability.

In the above description, the belt is wound around two rollers, but the present invention is not limited to this, and various modifications can be made to increase or decrease the number of rollers, their positions, the way they are wound, etc. Figure 4 shows the variation. Figure 4 (a
1 is a type in which a belt is wrapped around three rollers, and the long contact length further improves gas separation performance. FIG. 4 fbl also uses three rollers, but one of them is positioned above. With such a configuration, the belt length becomes longer, making it possible to substantially extend the life of the belt.Also, since the length of the part of the belt that is not in contact with the base body can be made triangular and longer, it becomes possible to substantially extend the life of the belt. The same effect as when the gate length is increased is obtained, and gas separation is further improved.

For the magnet 110 used in the present invention, it is desirable to select a material that satisfies conditions such as having little out-of-dust and being able to withstand actual operating temperatures. Further, although the magnet may rotate in synchronization with the rotation of the roller, it is preferable to fix it to the gate without rotating it in order to suppress fluctuations in the pulling torque.

The gate purge gas used in the present invention may be any gas as long as it does not have an adverse effect on the deposited a-3i film, but suitable gases include inert gases such as Ar and He, or H2, etc. Examples include gases that are moderately contained in the a-5i film.

As a purge gas, if only gas separation performance is desired, a gas with a large collision cross section and a small mean free path is desirable, and among the gases listed above, Ar is preferable, but A
When r gas enters the film forming chamber, it may affect glow discharge, although it is very rare. Therefore, it is necessary to use various gases depending on the type of film-forming gas and the required separation properties, and to mix and use appropriate flow rates. Further, the ejection port for the gate purge gas may be provided at the center in the gate transport direction, or may be provided offset to the left and right in the gate transport direction. - The ejection port is offset to the side of the film forming chamber where gas intrusion is more difficult to avoid. This increases the distance that the mixed gas travels up the purge gas flow in the gate, increasing the probability that the mixed gas will be pushed back due to collision with the purge gas, improving gas separation in a certain direction. Because it can be done. Purge like this
In the case where the gas ejection ports are provided offset, it is also effective to make the number of rollers around which the belt is wrapped in close contact with the substrate asymmetrical, for example, two on the left side and three on the right side.

Generally, gas separation performance using purge gas is improved by increasing the purge gas flow rate.

It is desirable to comprehensively determine the separation performance required for the system, pump pumping speed, etc.

In addition, although the pressure is generally the same in the two deposition chambers with a gate in between, it is effective to prevent contamination by increasing the pressure in the deposition chamber where contamination is more difficult compared to the other deposition chambers. As already disclosed.

[Examples] Hereinafter, the present invention will be specifically explained with reference to Examples, but the present invention is not limited to the Examples in any way.

[Experimental Example 11 Using the simple gate performance test device shown in Figure 5 fa),
Tested gate performance. 501 in figure 5 fat
502 is a base body, and 502 shows various gate attachment points, to which each of the belt type and slide type gates shown in FIGS. 1 and 3 can be attached.

Reference numeral 503 indicates a fixing base for the gate, and reference numeral 504 indicates a spring clamp for examining the frictional force generated on the contact surface of the gate when the base body 501 is pulled.

The items tested were the frictional force when using various gates and the number of damages on the top surface of the substrate (the surface on which no elements are formed) visually observed. The test results are shown in Table 1.

As shown in Table 1, the slide type shown in Figure 3 requires a large force of over 650 gu to move the base, and there are many scratches on the base. .

On the other hand, in the belt type of the present invention shown in FIG. 1, the force required to move the substrate was as small as about 50 g, and no damage to the substrate was observed.

[Experimental Example 2] Gate performance was tested using a gas separation performance test device using a gate shown in FIG.

5 (in BL, 510 is the gate installation position, and as in Experimental Example 1, various types of gates can be installed. 511 is the purge gas introduction pipe, 520, 53
0 is each vacuum container, 521° 531 is each vacuum container 52
Gas inlets 522 and 532 are exhaust ports of the vacuum container, each connected to an exhaust pump (not shown).

Further, 540 is a gas sampling tube, which is connected to a mass spectrometer 541.

As a measurement method, a gas inlet 521 is placed in a vacuum container 520.
With 1005 CCU of He gas and 11005 CC of H2 gas flowing into the vacuum container 530 from the gas inlet 531, the gate 510 was replaced with a different type, and the purge
By changing the purge gas introduced from the gas inlet, the amount of He gas that enters the vacuum container 530 from the vacuum container 520 side can be estimated from the signal intensity ratio of He and H2 in the mass spectrometer. /He ratio. The measurement conditions and setting conditions are shown in Table 2. Table 3 shows the 11 results.

Table 2 - Gas introduced into the reaction vessel - Gas introduced as gate purge gas As shown in Table 3, the belt type of the present invention has excellent gas separation performance.

As described above, through this experimental example, it was found that the gate according to the present invention did not cause any damage to the substrate and had excellent gas separation performance, and it was found that the effects of the present invention are great.

[Example 1, Comparative Example 1] The roll-to-roll type solar cell production apparatus shown in Fig. 2 was used, and the gate was the slide type shown in Fig. 3 and the book shown in Fig. 1. Using each of the belt types of the invention, an a-3i solar cell was fabricated on a long stainless steel substrate with a width of 5 cm that had been subjected to a predetermined cleaning process and surface treatment. The individual operations in producing the a-3i solar cell are as explained in the section of the prior art and are omitted here.

Table 4 shows the conditions for forming the n-type a-3i layer, the l-type a-3i layer, and the p-type a-5i layer, as well as various conditions such as the gate purge gas flow rate. Note that these conditions are constant when various gates are replaced.

The substrate on which the a-5i film has been deposited is removed together with the bobbin from the deposited film forming apparatus, and a transparent electrode is further deposited thereon. After completing the formation of all the layers constituting the solar cell as described above, the solar cell characteristics were evaluated at intervals of 5 cm along the length of the long substrate. As a pseudo sunlight measuring means, the efficiency in the area of ICm2 was calculated under the conditions of AMl, 5, and the average value is shown in Table 5. In addition, the number of shunts (short circuits) that occurred due to damage to the substrate or abnormal growth of the film was investigated, and Table 5 shows the percentage of all measured locations.

Table 5 As shown in Table 5, when the belt type gate according to the present invention shown in FIG. 1 is used, the average value of the solar cell efficiency is high and the rate of occurrence of shunt is low.

From the above, the gate of the present invention has an extremely excellent function of supporting and transporting the substrate without damaging it, and a function of separating gas, and it is possible to produce excellent solar cells at a high yield and at low cost.1 The effects of the present invention are great. be.

[Example 2, Comparative Example 2] One layer of the bottom cell was made of amorphous silicon germanium (hereinafter ra-5iGe) using a roll-to-roll production system using the present invention and a conventional gate.
A tandem type a-3i solar cell (abbreviated as J) was created.

A schematic diagram of the equipment used for preparation is shown in Section 6. The production apparatus shown in FIG. 6 is basically the production apparatus shown in FIG. 2 except that the film forming chamber is changed to a film chamber for tandem solar cells.

In FIG. 6, 600 is a delivery chamber, 610 is a bottom chamber, and 610 is a bottom chamber.
620 is an n-type a-5i layer deposition chamber for cells, 620 is an l-type a-5i Ge layer deposition chamber for bottom cells, 630 is a p-type a-Si layer deposition chamber for bottom cells, and 640 is for top cells. n type a
-5i layer deposition chamber, 650 is type 1 a-5i for top cell
A layer deposition chamber 660 is a p-type A-5I layer deposition chamber for the top cell, and each deposition chamber is equipped with gas mixers 611 and 621.
．． ..., 661, a film forming gas mixed at a desired flow rate and flow rate ratio is introduced, and power is applied from a high frequency power source (not shown) to form a desired film on the substrate 602. The raw material cylinder for film-forming gas is basically the same as the one shown in Figure 2, except for G e Ha gas for the 5iGe layer of the bottom cell.
A cylinder has been added. Further, 681 to 687 are gates that connect the respective chambers, which can be replaced with the conventional slide type shown in FIG. 3 or the belt type shown in FIG. 1 of the present invention.

Each gate is provided with a purge gas outlet, and a desired flow rate of purge gas is supplied from a purge gas cylinder to each outlet. The other parts related to film formation and the steps for forming the a-5i film are the same as those shown in the prior art, so their explanation will be omitted. Creation conditions of tandem type A-5i solar cell and gate purge/
The gas flow rates are shown in Table 6. After forming the substrate according to the conditions in Table 6 and completing all layer formation, a transparent conductive film was deposited in the same manner as in Example 1, and then the solar cell characteristics were evaluated and the average value of the calculated efficiency was examined. Ta. Furthermore, this solar cell was analyzed using a secondary ion mass spectrometer, and the amount of P in the first layer of the top cell and the amount of P were detected as impurities from the p-layer and n-layer deposition chambers that entered the i-layer deposition chamber. , the amount of P in one layer of the bottom cell and the amount of P were measured. For various gates,
The results of these measurements are shown in Table 7.

Table 7 As shown in Table 7, when the belt type gate of the present invention was used, a solar cell with good efficiency was obtained. Furthermore, when looking at the amount of impurities mixed into the i-layer, although there is some variation in the data, overall the gate of the present invention has the smallest amount of impurities mixed in.

From the above, the gate of the present invention has excellent gas separation performance and enables mass production of highly efficient solar cells, and the effects of the present invention are significant.

〔Effect of the invention〕

Since the present invention is configured as described in detail above, it has good transportability without damaging the substrate, suppresses the occurrence of cracks, holes, abnormal film growth, etc., and has a high yield rate. It becomes possible to produce batteries, etc. Furthermore,
The gate of the present invention has excellent gas separation performance, and as a result of suppressing the diffusion and mixing of gas between film-forming chambers, it is possible to deposit good a-3i films, etc., and to mass-produce highly efficient solar cells. Become.

[Brief explanation of the drawing]

FIG. 1 is a schematic diagram showing an embodiment of a gate according to the present invention,
FIG. 2 is an explanatory diagram showing a conventional roll-to-roll type semiconductor device production apparatus, FIG. 3 is an explanatory diagram showing an example of a conventional gate, and FIGS. FIG. 5(a) is an explanatory diagram of a simple gate performance test device, FIG. 5(b) is a gate gas separation performance test device, and FIG. It is a two-roll method schematic diagram. DESCRIPTION OF SYMBOLS 101...Gate, 102...Base made of a conductive magnetic material for a-3i film formation, 103... Film forming chamber, 104-...Gate opening cross section adjustment member. 105...Purge gas outlet for gate, 110...
- Magnet, 111...Roller, 112...Transport belt, 201-...Substrate on which the a-5i film made of conductive magnetic material is deposited, 211, 291-...Bobbin around which the substrate 201 is wound, 210 ...Substrate delivery chamber, 230- N type a-5i film formation chamber, 250- I type a-3i film formation chamber, 270・I) type a-5i film formation chamber, 290... Substrate winding Room, 220, 240. 260. 280...Gate. 230a, 250a, 270a--Cathode electrode. 230b, 250b, 270b...high frequency power supply,
202a to 205a... Raw material gas cylinder, 202a
...5IH4 gas cylinder, 203a...H2 gas cylinder, 204a...PH3 gas cylinder, 205a...B2H6 gas cylinder, 202b-20
5b...-Cylinder opening/closing valve, 202c to 205c.
...Pressure reducer, 230c, 250c, 270cm...Gas mixer,
230d, 250d, 270d --- Gas introduction line, 210e, 230e, 250e, 270e,
290e-exhaust pump, 230f, 250f, 2
70f...' Substrate heating heater, 230g, 25
0g, 270g...Power supply for the heater for heating the substrate, 3
01: Substrate for forming a deposited film made of a conductive magnetic material. 302... Gate, 303... Film forming chamber, 304... Gate opening cross section adjustment member, 305... Gate purge gas outlet, 306... Made of material with low frictional resistance. Contact surface for moving the base while in contact, 401...Base, 411...Roller, 412...Transport belt, 501-...Base, 502...Gate mounting location, 503... Gate fixing base, 504... Spring buckle for examining the frictional force generated on the contact surface of the gate when the base body 501 is pulled, 510... Gate mounting position, 511... Purge gas introduction pipe, 520, 530... Vacuum container, 521, 531... Gas inlet, 522, 532... Exhaust port, 540... Gas sampling tube, 600... Delivery chamber, 602... Substrate, 610...・N-type a-5i layer deposition chamber for bottom cell, 6
20... i-type a-5iGe layer deposition chamber for bottom cell,
630...p-type a-5i layer deposition chamber for bottom cell, 6
40... N-type a-Si layer deposition chamber for top cell, 65
0...I-type a-Si layer deposition chamber for top cell, 660
...p-type a-3i layer deposition chamber for top cell, 611,
621. ..., 661... gas mixer, 690 ・
SiH4 gas, GeHa gas, H2 gas, B2H11 gas, PH3 gas filled gas cylinder, 681-687...Gate. Patent applicant Representative of Canon Co., Ltd. Patent attorney Tadashi Kuwai

Claims (1)

[Claims] 1) It has a plurality of film-forming chambers and a gas gate that communicates between the film-forming chambers, and the long substrates are continuously and sequentially fed into the film-forming chamber through the gas gate to In a roll-to-roll type semiconductor device production apparatus for forming semiconductor devices on one surface of a long substrate, the gas gate rotates a plurality of rollers each having a conveyor belt attached therein along the conveyance direction of the long substrate. The elongated substrate is configured to be freely disposed, and to be transported between film forming chambers by moving within the gas gate together with the belt while the other surface of the elongated substrate is in contact with the transport belt. A roll-to-roll type semiconductor device production equipment featuring: