JPH0418777A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0418777A
JPH0418777A JP2122024A JP12202490A JPH0418777A JP H0418777 A JPH0418777 A JP H0418777A JP 2122024 A JP2122024 A JP 2122024A JP 12202490 A JP12202490 A JP 12202490A JP H0418777 A JPH0418777 A JP H0418777A
Authority
JP
Japan
Prior art keywords
differential amplifier
hall sensor
hall
magnetic flux
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2122024A
Other languages
Japanese (ja)
Inventor
Yoshimichi Hasegawa
長谷川 好道
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2122024A priority Critical patent/JPH0418777A/en
Publication of JPH0418777A publication Critical patent/JPH0418777A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To enable a magnetic flux to be surely and accurately detected by a method wherein a Hall sensor which outputs an inbalanced voltage when a magnetic flux is not existing and a differential amplifier which amplifies a Hall electromotive force outputted from the Hall sensor are provided. CONSTITUTION:A current source 12 is connected to the current injection electrode of a Hall sensor 11, and the other electrode opposed to the electrode concerned is grounded. A power is supplied to the current source 12 from a power supply voltage VDD, and a constant current is made to flow downward through the Hall sensor from above as shown on a figure. A pair of electrodes 11a and 11b are asymmetrically arranged on the side face of the Hall sensor 11 so as to take out a Hall electromotive force induced through Hall effect. The electrodes 13a and 13b are connected to differential input terminals 13a and 13b of a differential amplifier 13 provided with a common source. The differential amplifier 13 amplifies the difference between voltages inputted into the input terminals 13a and 13b and outputs the amplified voltage difference to an output terminal 13c. The electrodes 11a and 11b are asymmetrically disposed so as to absorb and cancel an offset voltage induced between the input terminals 13a and 13b of the differential amplifier 13 and to make the output of the differential amplifier 13 negative.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は磁束を検出してこれを電気信号に変換するホー
ルセンサを用いた半導体装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device using a Hall sensor that detects magnetic flux and converts it into an electrical signal.

〔従来の技術〕[Conventional technology]

従来、この種のホールセンサを用いた半導体装置として
は、例えば、第3図に示Sれる回路構成のものが一般的
である。ホールセンサ1には電流ソース2から定電流が
供給されている。このホールセンサ1に外部磁束が作用
すると端子la。
Conventionally, a typical semiconductor device using this type of Hall sensor has a circuit configuration shown in FIG. 3, for example. A constant current is supplied to the Hall sensor 1 from a current source 2. When external magnetic flux acts on this Hall sensor 1, terminal la is activated.

lb間にはホール起電力(ホール電圧)が発生する。こ
の端f対1a、1.bは対称に配置されており、端子間
に発生したホール起電力は差動アンプ3の入力端子3a
、3bに1jえられて増幅され、出力端子3cに出力さ
れる。
A Hall electromotive force (Hall voltage) is generated between lb and lb. This end f vs. 1a, 1. b are arranged symmetrically, and the Hall electromotive force generated between the terminals is transferred to the input terminal 3a of the differential amplifier 3.
, 3b, amplified, and outputted to the output terminal 3c.

〔発明が解決17ようとする課題〕 しかしながら、差動アンプ3の入力端子3a。[Problems that the invention attempts to solve 17] However, the input terminal 3a of the differential amplifier 3.

3b間には必ずオフセット電圧か生じ、各入力端子3a
、3bに句、えられる差動入力電圧か全く同じ値であっ
ても出力端子3Cには電圧が出力されてしまう。この結
果、ホールセンサ1に磁束が無い時であっても差動アン
プ3から出力電圧が現れたり、また、逆に、磁束が有る
にもかかわらず、差動アンプ3に出力電圧が現れないと
いった現象が生じる。
3b, an offset voltage always occurs between each input terminal 3a.
, 3b, the voltage is output to the output terminal 3C even if the differential input voltages are exactly the same value. As a result, an output voltage may appear from the differential amplifier 3 even when there is no magnetic flux in the Hall sensor 1, or conversely, an output voltage may not appear at the differential amplifier 3 even though there is magnetic flux. A phenomenon occurs.

差動アンプ3の出力端T−3cに現れる磁束検出出力は
、本来、第4図に示される検出特性になるはすである。
The magnetic flux detection output appearing at the output terminal T-3c of the differential amplifier 3 originally has the detection characteristics shown in FIG. 4.

つまり、同図の横軸に示される磁界[Gausslが0
の時には、縦軸に示される出力電圧[V] は本来Oに
なるはずである。しがしながら、差動アンプ3の入力端
子3a、3b間に発生ずるオフセット電圧のため、その
検出特性は第5図に示されるものになってしまう。つま
り、同図の横軸に示される磁界[Gausslが0の時
であっても、縦軸に示される出力電圧[V]には電圧V
orl’setを生じる。
In other words, the magnetic field [Gaussl is 0
When , the output voltage [V] shown on the vertical axis should originally be O. However, due to the offset voltage generated between the input terminals 3a and 3b of the differential amplifier 3, the detection characteristics become as shown in FIG. In other words, even when the magnetic field [Gaussl] shown on the horizontal axis in the figure is 0, the output voltage [V] shown on the vertical axis is
orl'set.

〔課題を解決するための手段〕[Means to solve the problem]

本発明はこのような課題を解消するためになされたもの
で、ホール起電力を取り出す電極り・1が非対称に配置
されて磁束かない時に非平衡電圧を出力するホールセン
サと、このホールセンサから出力されるホール起電力を
増幅する差動増幅器とからJ1η成されたものである。
The present invention was made to solve such problems, and includes a Hall sensor that outputs an unbalanced voltage when there is no magnetic flux because the electrode plate 1 that extracts the Hall electromotive force is arranged asymmetrically, and the output from this Hall sensor. J1η is constructed from a differential amplifier that amplifies the Hall electromotive force generated.

〔作用〕[Effect]

差動増幅器の入力端子間に生じるオフセット電圧は、ホ
ールセンサの非対称電極対構造によって出力される非平
衡電圧と相殺される。
The offset voltage created between the input terminals of the differential amplifier is canceled out by the unbalanced voltage output by the asymmetric electrode pair structure of the Hall sensor.

〔実施例〕〔Example〕

本発明の一実施例によるホールセンサを用いた半導体装
置を第1図に示す。
FIG. 1 shows a semiconductor device using a Hall sensor according to an embodiment of the present invention.

ホールセンサ11の電流注入電極には電流ソス12が接
続されており、この電極に対向する他方の電極は接地さ
れている。電流ソース12は電源電圧Vl)Dから電力
供給を受け、ホールセンサ]1に図の」一方から下方に
向けて定電流を通電する。また、ホールセンサ11の側
面にはホール効果によって発生するホール起電力を取り
出すための電極対1.1a、11.bが非対称に配置さ
れている。この電極対1.1.a、llbは共通ソース
を持つ差動アンプ13の差動入力端子13a、13bに
、接続されている。差動アンプ13は、これら入力端子
13a、13bに入力された電圧差を増幅して出力端子
13cに出力する。この差動アンプ13も電源電圧VD
Dからの電力供給によって動作する。
A current source 12 is connected to a current injection electrode of the Hall sensor 11, and the other electrode facing this electrode is grounded. The current source 12 receives power from the power supply voltage Vl)D, and supplies a constant current to the Hall sensor 1 from one side in the figure downward. Further, on the side surface of the Hall sensor 11, electrode pairs 1.1a, 11. b are arranged asymmetrically. This electrode pair 1.1. a and llb are connected to differential input terminals 13a and 13b of a differential amplifier 13 having a common source. The differential amplifier 13 amplifies the voltage difference input to these input terminals 13a and 13b and outputs it to an output terminal 13c. This differential amplifier 13 also has a power supply voltage VD
It operates by power supply from D.

電極対11a、llbの位置関係は、ボールセンザ11
に流れる電流の大きさやこのホールセンサ]1の比抵抗
等によって決定される。本実施例では、差動アンプ13
の入力端子13a、13bに生じるオフセット電圧を吸
収して相殺し、さらに、差動アンプ13の出力が負側に
振れるようにrgWIJ 11 a、  11 bが非
対称に配置されている。
The positional relationship between the electrode pair 11a and llb is based on the ball sensor 11.
It is determined by the magnitude of the current flowing through the hole sensor and the specific resistance of the Hall sensor. In this embodiment, the differential amplifier 13
The rgWIJs 11a and 11b are arranged asymmetrically so that offset voltages generated at the input terminals 13a and 13b of the rgWIJs are absorbed and canceled, and further, the output of the differential amplifier 13 swings to the negative side.

また、新たに別の電流源を設け、この電流源の電流量を
調節することにより、電極対1. ]、 a1、1 b
に生しる非平衡電圧の値を任意に設定することもi+J
能である。
In addition, by newly providing another current source and adjusting the current amount of this current source, electrode pair 1. ], a1, 1 b
It is also possible to arbitrarily set the value of the unbalanced voltage that occurs in i+J.
It is Noh.

このような構成における装置の磁束検出特性は第2図に
示される。同図の横軸はホールセンサ11に加わる磁界
の強さ[Gaussl 、縦軸は差動アンプ13の出力
端子13cに現れる検出電圧[V]を表している。電極
対11a、11.bの非対称構造により、ホールセンサ
1]に磁界が印加されていない時にも、出力端子]、 
3 cには逆オフセットによる電圧値−Vaが現れる。
The magnetic flux detection characteristics of the device with such a configuration are shown in FIG. In the figure, the horizontal axis represents the strength of the magnetic field applied to the Hall sensor 11 [Gaussl], and the vertical axis represents the detected voltage [V] appearing at the output terminal 13c of the differential amplifier 13. Electrode pair 11a, 11. Due to the asymmetric structure of b, even when no magnetic field is applied to the Hall sensor 1], the output terminal],
A voltage value -Va due to the reverse offset appears at 3c.

電極対1.1a、llbに生じる非平衡電圧を越える強
さの磁界がホールセンサ11に印加されると、差動アン
プ13の出力は1■−側に振れ、ホールセンサ11に作
用する磁束か検出される。なお、本装置は磁束の有無を
デジタル的に検出するものである。
When a magnetic field with a strength exceeding the unbalanced voltage generated on the electrode pair 1.1a, llb is applied to the Hall sensor 11, the output of the differential amplifier 13 swings to the 1■- side, and the magnetic flux acting on the Hall sensor 11 Detected. Note that this device digitally detects the presence or absence of magnetic flux.

このような本実施例においては、磁束がホールセンサ1
1に作用していない時には差動アンプ13の出力端子1
3cには検出出力は現れず、従来のように磁束を誤検知
することはない。従って、ホールセンサ11に作用する
磁束の有無を適確に判定することか出来る。
In this embodiment, the magnetic flux is
1, the output terminal 1 of the differential amplifier 13
No detection output appears at 3c, and there is no possibility of erroneously detecting magnetic flux as in the conventional case. Therefore, the presence or absence of magnetic flux acting on the Hall sensor 11 can be accurately determined.

なお、上記実施例の説明では装置をデジタル的に使用し
たが、非平衡電圧による差動アンプ13の出力を負側に
振らないでOに設定すれば、装置をアナログ的に使用す
ることが可能である。この場合にも上記実施例と同様な
効果か得られる。
In addition, in the explanation of the above embodiment, the device was used digitally, but if the output of the differential amplifier 13 due to unbalanced voltage is set to O without swinging to the negative side, it is possible to use the device analogously. It is. In this case as well, effects similar to those of the above embodiment can be obtained.

〔発明の効果〕 以上説明したように本発明によれば、差動増幅器の入力
端子間に生じるオフセット電圧は、ホールセンサの非対
称電極対構造によって出力される非平衡電圧と相殺され
る。このため、従来のように、ホールセンサに磁束が無
い時であっても差動アンプから出力電圧か現れたり、ま
た、逆に、磁束が白−るにもかかわらず、差動アンプに
出力電圧が現れないといった現象は生E、なくなり、磁
束を適確に検知することか出来る装置を提供することか
i1J能になる。
[Effects of the Invention] As described above, according to the present invention, the offset voltage generated between the input terminals of the differential amplifier is canceled out by the unbalanced voltage output by the asymmetric electrode pair structure of the Hall sensor. For this reason, even when there is no magnetic flux in the Hall sensor, an output voltage appears from the differential amplifier as in the conventional case, and conversely, even when there is no magnetic flux, the output voltage appears at the differential amplifier. The phenomenon that magnetic flux does not appear will disappear, and it will become possible to provide a device that can accurately detect magnetic flux.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例によるホールセンザを用いた
半導体装置の構成を示す回路図、第2図は第1図に示さ
れた本実施例による半導体装置の磁束検出特性を示すグ
ラフ、第3図はホールセンザを用いた従来の半導体装置
の構成を示す回路図、第4図はこの種の装置が本来持つ
べき磁束検出特性を示すグラフ、第5図は第3図に示さ
れた従来の装置の磁束検出特性を示すグラフである。 11・・・ホールセンザ、l]a、llb・・非対称に
配置された電極対、12・・電流ソース、13・・差動
アンプ、13a、13b・・・差動入力端丁、1.3 
c  ・検出出力端子。 本手の特・1生 第4図 棧來の特性 第ら図
FIG. 1 is a circuit diagram showing the configuration of a semiconductor device using a Hall sensor according to an embodiment of the present invention, FIG. 2 is a graph showing magnetic flux detection characteristics of the semiconductor device according to the embodiment shown in FIG. 1, and FIG. Fig. 3 is a circuit diagram showing the configuration of a conventional semiconductor device using a Hall sensor, Fig. 4 is a graph showing the magnetic flux detection characteristics that this type of device should originally have, and Fig. 5 is a circuit diagram showing the configuration of a conventional semiconductor device using a Hall sensor. It is a graph showing magnetic flux detection characteristics of the device. DESCRIPTION OF SYMBOLS 11...Hall sensor, l]a, llb...Asymmetrically arranged electrode pair, 12...Current source, 13...Differential amplifier, 13a, 13b...Differential input terminal, 1.3
c ・Detection output terminal. Characteristics of Honte・1st life Diagram 4 Characteristics of the next generation

Claims (1)

【特許請求の範囲】[Claims]  ホール起電力を取り出す電極対が非対称に配置されて
磁束がない時に非平衡電圧を出力するホールセンサと、
このホールセンサから出力される前記非平衡電圧により
オフセット電圧が相殺され前記ホール起電力を増幅する
差動増幅器とから構成された半導体装置。
A Hall sensor that outputs an unbalanced voltage when there is no magnetic flux because the electrode pair that extracts the Hall electromotive force is arranged asymmetrically,
A semiconductor device comprising a differential amplifier that amplifies the Hall electromotive force by canceling an offset voltage by the unbalanced voltage output from the Hall sensor.
JP2122024A 1990-05-11 1990-05-11 Semiconductor device Pending JPH0418777A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2122024A JPH0418777A (en) 1990-05-11 1990-05-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2122024A JPH0418777A (en) 1990-05-11 1990-05-11 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0418777A true JPH0418777A (en) 1992-01-22

Family

ID=14825702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2122024A Pending JPH0418777A (en) 1990-05-11 1990-05-11 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0418777A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0667648A2 (en) * 1994-02-09 1995-08-16 Hewlett-Packard Company Hall-effect sensor
DE10245551A1 (en) * 2002-09-30 2004-04-08 Infineon Technologies Ag Integrated semiconductor circuit arrangement

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0667648A2 (en) * 1994-02-09 1995-08-16 Hewlett-Packard Company Hall-effect sensor
EP0667648A3 (en) * 1994-02-09 1995-11-02 Hewlett Packard Co Hall-effect sensor.
DE10245551A1 (en) * 2002-09-30 2004-04-08 Infineon Technologies Ag Integrated semiconductor circuit arrangement
US6891431B2 (en) 2002-09-30 2005-05-10 Infineon Technologies Ag Integrated semiconductor circuit configuration

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