JPH04179116A - Charged corpuscle beam device - Google Patents

Abstract

PURPOSE:To enable the title charged corpuscular beam irradiation system to be manufactured by a method wherein the charged corpus-cular beam focussing means and the charged beam polarizing means are arranged at least on the substrates which are to be laminated and junctioned with one another using insulating spacers interposed between respective substrates. CONSTITUTION:An electron ray device is composed of two lens electrodes 3a, 3b comprising an electron ray source 1, an extraction electrode (grid)2 and objective lenses 3 and electrostatic polarization electrodes 4. On the other hand, the electron ray device and the electrodes are arranged on the substrates 5a-5e comprising e.g. silicon wafers, etc., while respective substrates 5a-5e are separated through the intermediary of insulating spacers 6a-6d and junctioned with one another through the intermediary of bonding agent layers to be formed into one body (laminated). Furthermore, alignment marks 9 are previously made on the substrates 5 comprising silicon wafers, etc., while respective substrates are junctioned with one another making alignment using these alignment marks 9 as reference points so that a multibeam device 100 wherein the title multiple charged corpuscular beam devices are arrayed may be manufactured.

Description

DETAILED DESCRIPTION OF THE INVENTION 1:3- [Industrial Application Field] The present invention relates to an improvement in a charged particle beam device, and particularly to an improved structure of a charged particle beam irradiation optical system therein.

[Prior art 1] In charged particle beam devices, such as scanning electron microscopes, electron beam recorders, and electron beam lithography devices, which focus a charged particle beam into a fine beam and irradiate it onto a sample, the charged particle beam irradiation optical system is There is an increasing demand for smaller size and lighter weight.

Furthermore, recently, so-called multi-beam charged particle beam devices that can emit a plurality of charged particle beams at minute intervals have been actively developed. An example of this is JP-A-63-150837. The publication discloses an electron-emitting device in which an electron-emitting source, a control electrode, and a focusing electrode are integrated, and a multi-beam electron-emitting device in which they are arranged in a 7-trix pattern. .

[Problems to be Solved by the Invention 1] In the conventional example described above, since the focusing electrode is also integrated, the emitted electron beam is narrowly focused.

Although it is possible to accurately direct the emitted electron beam in a desired direction, it is not possible to deflect and scan each emitted electron beam because it does not include means for deflecting the emitted electron beam. Therefore, a pattern cannot be drawn by a single emitted electron beam. In addition, in a multi-beam type device in which multiple electron emission sources are arranged in a matrix, a pattern can be drawn by operating the electron emission sources at desired positions in the matrix, but in this case, the pixel Since the pitch is determined by the matrix pitch, that is, the arrangement interval of the electron emission sources, it is currently difficult to realize a satisfactory minute pixel pitch.

An object of the present invention is to provide a charged particle beam apparatus having a highly miniaturized charged particle beam irradiation system that also includes a charged particle beam deflection means.

Another object of the present invention is to provide a charged particle beam apparatus having a highly miniaturized charged particle beam irradiation system equipped with a charged particle beam generating means, a focusing means, and a deflecting means.

Still another object of the present invention is to integrate a charged particle beam generating means, focusing means, and deflection means f! An object of the present invention is to provide a charged particle beam device having a highly miniaturized charged particle beam irradiation system.

Still another object of the present invention is to provide a charged particle beam device that has a function of irradiating and controlling an electric particle beam with high precision.

Still another object of the present invention is to provide a multi-beam charged particle beam device by arranging miniaturized charged particle beam irradiation systems in a 7-trix pattern.

[Means for solving the problem] The above problem is achieved by stacking and bonding the following five types of substrates formed using semiconductor lithography and etching processing technology using alignment marks and bonding them to one chip. This can be solved.

(1) A substrate having one alignment mark and a charged particle beam source formed at a position a predetermined distance from the mark.

(2) A substrate having one alignment mark and forming an extraction electrode at a predetermined distance from the mark for extracting charged particles from a charged particle beam source.

(3) A substrate having a 0 positioning mark and forming a lens electrode for focusing a charged particle beam at a position at a predetermined distance from the mark.

(4) A substrate having one alignment mark and forming an electrostatic deflection electrode or an electromagnetic deflection coil for deflecting a charged particle beam to a position at a predetermined distance from the mark.

(5) An insulating spacer having one alignment mark and forming an opening or the like for passing a charged particle beam at a position a predetermined distance from the mark.

[Function] Using semiconductor patterning and etching technology,
It becomes possible to form an alignment mark on a substrate and form a charged particle beam source at a predetermined position with reference to the alignment mark. Furthermore, an electron lens for focusing the charged particle e-ray and a deflection means for deflecting and scanning the charged particle beam are each mounted independently on the substrate I-, which has alignment marks similar to the charged particle beam source. can be formed. By applying such semiconductor technology, the cross-sectional dimension can be reduced to 1. It becomes possible to manufacture a charged particle beam device with a size of about cm square.

Conventional charged particle beam devices, even if they are miniaturized as much as possible,
Its cross section is large, with a diameter of several tens of millimeters or more when measured by the ゛ method.As a result, assembly errors occur due to machine processing tolerances, and the positional relationship of the charged particle beam source, electron lens, deflector, etc. is at least 20 μm or more. There was a misalignment between the two positions. For this reason, alignment adjustment has been performed by trial and error by installing an alignment coil 4-1 as an alignment means 1-1 for correcting positional deviations. In this regard, according to the present invention, each substrate has an alignment mark, and the alignment mark is bonded to the body at 11 (where the substrates are aligned at 1-). By doing so, the positional deviation is 1
High-precision assembly of ~2 pm or less is possible, and alignment means such as alignment coils can be made unnecessary.

In addition, semiconductor patterning and etching technology makes it possible to form extremely fine charged particle beam generating means, focusing means, and deflection means on a substrate, and it is now possible to adopt a structure in which these substrates are stacked and bonded. This enables ultra-miniaturization of charged particle beam devices.

Furthermore, since semiconductor patterning technology can repeatedly form fine two-knit structures on a substrate, it is possible to form multiple miniaturized charged particle beam device units in a one-dimensional array or two-dimensional array. 71 can be arranged in a helix shape.

[Example] Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

FIG. 1 shows a schematic configuration of a charged particle beam device according to an embodiment of the present invention. This example is an example in which an electron beam source is used as a charged particle beam source and an electrostatic deflection means is used as one stage of charged particle beam deflection.

That is, the electron beam device of this embodiment is composed of an electron beam source 1, an extraction electrode (grid) 2, two lens electrodes 3a and 3b constituting an objective lens 3, and an electrostatic deflection electrode 4. . These electron beam sources and electrodes are fabricated on substrates 5a to 5e made of, for example, silicon wafers, and the spaces between these substrates are made of an electrical insulator such as oxide or ceramics. They are separated by edge spacers 68 to 6d and bonded to each other via an adhesive layer such as lead glass.

It is integrated (layered). Note that 78 to 7e indicate oxide films formed on the silicon substrates 58 to 5e.

The amount of electron beam emitted from the electron beam source 1 can be controlled by the extraction voltage applied to the extraction electrode 2. In the objective lens 3, the emitted electron beam first passes through the lens electrode 3a, is once diverged, and is then strongly focused in the vicinity of the lens electrode 3b. It can be controlled by adjusting the electric field strength between the electrodes 3a and 3b. The electron beam narrowed by the objective lens 3 is then electrostatically deflected by the deflection electrode 4 and scanned two-dimensionally over the surface of the sample 8.

Furthermore, in the present invention, as shown in FIG. 3(a),
By providing alignment marks 9 in advance on the substrate 5 made of a silicon wafer or the like, and using the marks,
Since the electron beam source 1, extraction electrode 2, lens electrodes 3a, 3b, and deflection electrode 4 are formed with alignment accuracy of lpm or less with respect to the alignment mark 9, this alignment mark is also used between each substrate. By bonding while aligning with reference to 9, it is possible to realize a multi-beam device 100 in which a large number of stacked charged particle beam devices 10 are arranged in a matrix with high accuracy of about ±1 pm. As the alignment mark 9, for example, a cross mark 9a shown in FIG. 3(b) or a square mark 9b shown in FIG. 3(c) can be used. Note that the method for taking out each electrode in the case of multiplexing will be described later using FIGS. 14 and 15.

Next, the features of the present invention will be described in comparison with the conventional technology. Conventional charged particle beam devices have large electron optical systems;
Because the positioning and assembly was performed based on mechanical tolerances, there was a deviation of at least 20 pm in the positional relationship between the charged particle beam source, electron lens, and deflector. For this reason, large positional deviations and tilt deviations have occurred between the electron optical axes of these parts. This positional shift and tilt shift increase the aberration of the charged particle beam, increase the spot diameter of the charged particle beam, and lead to a decrease in resolution, so it is necessary to provide an alignment means to correct the aberration of the electron lens. was there.

The present invention eliminates the need for such alignment means. Furthermore, by using semiconductor lithography and etching techniques, the present invention makes it possible to miniaturize each part and accurately pattern the main parts of each part. By adopting a structure in which these parts are joined and laminated, one charged particle beam device unit can be created!・1c
This makes it possible to form within m square.

Further, according to the present invention, since the electron beam device units shown in the first figure can be arranged in a 71-x shape to form a multi-beam, the electron beam device units can be arranged facing each other at a plurality of locations on the surface of a large-area sample. By using it as a scanning electron microscope with multiple heads, multiple locations on the sample surface can be observed simultaneously. Furthermore, by using the present invention as a multi-beam type lithography device during electron beam lithography in the LSI manufacturing process, it is possible to improve the lithography throughput. Furthermore, by adding the ability to write or read information electronically,
It is also possible to use it as a multi-beam type electron beam recording/reproducing device.

FIG. 2 shows a schematic configuration of a charged particle beam device according to another embodiment of the present invention. This embodiment is an example in which an electron beam source is used as the charged particle beam source and electromagnetic deflection means is used as the charged particle beam deflection means.

That is, in this embodiment, an electromagnetic deflection coil 11 is used in place of the electrostatic deflection electrode 4 in FIG. 1 to deflect the electron beam. The electromagnetic deflection coil 1] is also embedded in a substrate 12, and an electrode 13 is provided on the outer peripheral surface 1-1 of the substrate. Then, as in the case of FIG. 1, the entire device is assembled by stacking and joining.

Note that, if a non-magnetic material is used for the electrode 3, the electromagnetic deflection coil 11 can be placed outside the electrode 13. Further, in this embodiment, lens electrodes 3a, 3b
Connect the electromagnetic deflection coil J1 between l'l [! However, similar to the case of the electrostatic deflection electrode 4 in FIG. 1, the same effect can be obtained by disposing the electromagnetic deflection coil 11 below the lens electrode 3b.

Next, the manufacturing method of each part will be explained in detail.

An example of a manufacturing method of the electron beam source 1 is shown in FIGS. 5(a) to 5(g).

First, in 1) of the figure, oxide films 51 are formed on both sides of a silicon substrate 50 having a (100) plane orientation.

Next, a resist film 52 is applied to one side (two sides), and a square open pattern 53 is formed thereon (FIG. 2(b)).
). Then, using the lens 1-film 52 as a mask, the oxide film 5 is
1 to form a square opening in the oxide film. Next, by masking the oxide film 51 and anisotropically etching the substrate 50' using an alkaline aqueous solution such as KOTOI, (1), 1. Four quadrangular pyramid-shaped parts 54 are formed (FIG. 3(C)). Thereafter, the entire oxide film of the substrate 50-1 is removed by etching using a mixed solution of hydrofluoric acid and ammonium fluoride 11, and then an opening 56 is formed on the substrate 50.
After overlapping another substrate 5a having an alignment mark and aligning the two substrates 5a with reference to the alignment mark, the two substrates are bonded (FIG. 4(d)). An adhesive layer such as button glass is previously formed on the bonding surface of the substrate 5a by a method such as sputtering, and by heating the two substrates to about 500° C. after aligning and adhering them, the two sets of adhesive layers melt. The plates of both systems are joined together. Note that the method for manufacturing the substrate 5a with the opening 11 will be described later. After the two substrates are bonded, the opening 56 and the recess 54 are filled with an electron-emitting material that will become the electron beam source 1, for example, by electroforming (FIG. 4(e)). The pointed needle portion 57 of the resulting electron beam source 1 is formed to be sharp, following the shape of the four portions 54 described above. Thereafter, as shown in FIG. 5(f), the lower substrate 50 is etched from the bottom using KOFT etching solution, and the electron beam source 1 as shown in FIG. 2(g) is formed. A substrate 5a having the following structure is formed. As a result,
A compact and highly accurate electron beam source with a height of several hundred pm or more can be easily manufactured.

Next, using FIGS. 4(a) to 4(1), a method for manufacturing the substrate 5a with openings used in FIG. 5 will be described. First, oxide films 40 are formed on both sides of a silicon substrate 5a having a plane orientation of (1,00) (FIG. 4(a)). Thereafter, the lenses 1 to 41 are coated on both sides and photodeveloped for 5 m to form a rectangular open pattern 42 on both sides of the resist film (FIG. 1(b)). Further, using this resist film as a mask, the oxide film 40 is etched to form a rectangular opening]-1 portion 423 in the oxide film (FIG. 4(C)). Then,
Using this oxide film as a mask, the silicon substrate 5a is etched using a KOH aqueous solution.
Due to the anisotropy of , a (11]-) plane appears and a truncated quadrangular pyramid-shaped recess 44 is formed (FIG. 2(d)), and as the etching progresses further, a through hole is eventually formed in the substrate 5a (FIG. 4(d)). (d)). Thereafter, the intersection line 45 of the (111) plane is etched, and after a predetermined period of time, a substrate 5a having a through opening 56 with a vertical side wall surface is formed (FIG. 5(f)). After the oxide film 40 on both surfaces of the substrate 5a thus obtained is once removed, an oxide film 7a is formed again on the entire surface of the substrate 5a by thermal oxidation. If the substrate 521 in this state is used as a substrate with openings 1 in FIGS. can be kept electrically insulated.

Next, an example of a manufacturing method of the electron beam extraction electrode 2 is shown in FIG.
This will be explained using a) to (1). First, silicon (100 mm) having alignment marks 9 as shown in FIG.
) An oxide film 60 is formed on one side of both substrates 5b, and an oxide film 60 is formed on the other side.
Cr film 6] is formed by vapor deposition or the like (see Figure (a)).
). Next, a resist film 62 is formed on the A, U, Cr film 6].
was applied, exposed and developed to create a circular gap [J
A pattern 62a is formed ((1) in the same figure). after that,
Using the lens I film 62 as a mask, the Au and Cr films 61 are etched to form a circular open pattern 61a on the Au and Cr films.
((c) in the same figure). After this, Au, Cr film 61
An oxide layer 63, such as SiO□, is deposited on the surface (FIG. 4(d)). Next, after depositing a lead glass film to serve as an adhesive layer on the surface of the oxide layer 63 by sputtering,
A metal film 64 of Cr or the like is formed thereon by vapor deposition (FIG. 6(e)). Au, Cr film 61 vapor deposition, oxide M63
When depositing the metal film 64 and vapor-depositing the metal film 64, it is necessary to perform appropriate masking so that the alignment mark 9 is not covered. Form the
This can be achieved by a method such as covering the alignment mark portion with the masking pattern portion.

Next, while using the alignment mark 9 as a reference,
) to (c), a circular opening 64a is formed in the metal film 64, and then, using the metal film 64 as a mask, the oxide N63 is isotropically etched with hydrofluoric acid or the like, A circular opening 63a is formed in the oxide layer 63 (FIG. 6(f)). Next, the metal film 64 is removed by etching (FIG. 6(g)), but at this time, since the upper surface of the Au, Cr film 61 is covered with Au, the film 61 is not etched.

Next, while using the alignment mark 9 as a reference,
) to (c), a rectangular lobe pattern 60a is formed on the oxide film 60 formed on the opposite surface of the substrate 5a.
Then, by anisotropically etching the silicon substrate 5b from below, a truncated pyramid-shaped opening 65 is formed (see (j) in the same figure). As a result, the first
Insulating spacer 6a and silicon substrate 5 as shown in the figure
A grid electrode 2 having a structure sandwiched between the electrodes b and b is formed.

If a lead glass film is attached on the insulating spacer 6a in advance, lamination and bonding with the substrate 5a on which the electron beam source 1 is provided is possible.

FIGS. 7(a) to 7(e) show a method for creating the lens electrode 3a. First, an oxide film 70 is formed on one side of the silicon (100) surface substrate 5C (FIG. 2(a)), and an Au and Cr film 71 is formed on the other surface by vapor deposition (FIG. 2(b)). , a circular open pattern 71a is formed on the Cr film 71 (FIG. 3(C)). After that, the oxide film 70 has a rectangular space [1
A pattern 70a is formed in the same figure (d), and the oxide film 7 is
0 as a mask, the silicon substrate 5C is anisotropically etched from below to form a truncated pyramid-shaped opening 75 (FIG. 4(e)). As a result, the lens electrode 3a held on the silicon substrate 5c as shown in FIG. 1 can be obtained.

Note that the lens electrode 3b can be created by a method completely similar to the method for creating the lens electrode 3a described above.

Next, regarding the method of forming the deflection electrode 4 in FIG.
This will be explained using FIGS. 8(a) to (C). First, using a method similar to that shown in FIGS. 4(a) to 4(f), a through hole 81 having a square cross section is formed in the silicon substrate 5e (FIG. 4(a)). Next, a vapor deposition mask 83 having a rectangular window 82 that crosses one side of the through hole 81 on the substrate 5e'2
(FIG. 4(b)), and metal to be the material of the electrode 4 is vapor-deposited obliquely from above through the mask. As a result, an electrode 4a as shown in FIG. 4(c) is obtained. Through hole 81
The other three electrodes 4b, 4c, and 4d are obtained by performing the same vapor deposition operation as above on the other three sides.

Next, a method of forming the electromagnetic deflection coil 11 shown in FIG. 2 will be explained using FIGS. 9(a) to 9(c). First, a plurality of substrates 90 having a plurality of through holes 91 formed in a matrix shape are prepared by a method similar to that shown in FIGS. 4(a) to 4(f). By stacking the substrates and bonding them with an adhesive layer such as button glass,
A laminated substrate 12 having a deep through hole 92 is obtained (see (b) in the same figure).
)). Next, a metal with a low melting point is melted into the through holes 92 to form a plurality of embedded metal columns 93, and the laminated substrate 12 is
The coil 11 is formed by successively electrically connecting the plurality of metal columns 93 using the connecting conductor layer 94 on the front and back surfaces of the coil 11 (FIG. 3(C)). This electrical connection can be made by the process described below with reference to FIG.

In addition, when filling the metal into the through hole 92 in FIG. 9(c), first, as shown in FIG. 10(Xl),
A molten metal 95 is placed in the opening D-1- on the - side of the through-hole, and then, as shown in Figure (b), the pressure difference ( P1>P
2) to draw the molten metal into the through hole. Thereby, even a narrow and deep through hole can be easily filled with molten metal. Note that the solidified metal remaining on the substrate surface is removed by polishing or the like so that the substrate surface and the outer surface of the metal filled in the through hole are flush with each other.

In addition, in order to form the electromagnetic deflection coil 11, as shown in FIG.
In order to connect the metal columns 93 shown in FIG. 11 (
A foot-off method as shown in a) to (d) can be used. First, a resist film 96 is coated on one side of the substrate 12 (FIG. 2(a)), and the resist film 96 is coated on one side of the substrate 12.・By exposing and developing the film, a resist opening [1 part 96a is formed (FIG. 2(b))]. After that, Au, C is removed from - of the resist film.
A metal film 97 such as R is vapor-deposited on the entire surface of the sliver (FIG. 3(C)). Finally, by removing the film 96 on the resist 1, the metal film on the film 96 on the resist 1 is lifted off and opened.
Leaving the metal film portion (connection conductor H) 94 deposited on a, the connection conductor layer 94 provides electrical continuity between the metal columns 93 embedded in the substrate 12 (
Figure (d)). In this way, a coil as shown in FIG. 9(c) can be formed.

Next, an example of a manufacturing method for insulator spacers 6b to 6d for insulating between substrates 5b to 5e is shown in FIG. 12(a).
This will be explained using (d). First, a metal film 14 such as Cr is deposited on one side of the ceramic substrate 6 (see FIG.
). Next, a resist film is applied to the second part as shown in Fig. 6 (
Openings 14a, +41) are formed in the metal film 14 by a process similar to +3) to (c) (FIG. 3(b)). Thereafter, using the metal film 14 as a mask, the alignment marks 15a, 5b are etched onto the substrate 6 by selective dry etching.
After forming the metal film 14 in the depth direction, the metal film 14 is removed by etching or the like. Determine the coordinates based on the mark above.
2: I - 271 by setting and drilling or ultrasonic machining etc.
- A plurality of openings 16 a arranged in a comb shape.

1.6b and 16c are formed.

Next, a method for laminating, aligning and bonding a plurality of substrates having alignment marks will be described with reference to FIG. 13. In the figure, optical microscopes 1.7a, ], 7b
are for observing the alignment mark 19a on the substrate 18a and the alignment mark 19b on the substrate 1.8b, respectively, and are set so that the optical axes of both are completely aligned.

Further, the optical microscopes 17c and 17d each have a substrate 1.
This is for observing the alignment mark 19 c of 8 a and the alignment mark 19 d of the substrate 18 b, and the optical axes of both are set so as to coincide completely.

The separated substrates to be aligned], 8a and 18b are held by suction on vacuum suction plates 20a, 20b, . Y-direction moving tables 22a, 22b, Z-direction moving tables 23a, 23
b, and O direction rotary table 24a.

24b is configured to allow three-dimensional direction fine adjustment and rotational direction fine adjustment. This fine adjustment mechanism positions each alignment mark on the substrate so that it coincides with the center of the field of view of the corresponding observation microscope. This completes the alignment of the substrates 1.8a and 18b using the alignment mark as a reference.

Thereafter, one of the substrates 1.8a, ], 8b is moved in the Z direction (optical axis direction of the optical microscope) to bring the substrates into close contact with each other. In this state, both substrates are heated by heaters built into the suction plates 20a and 20b, and an adhesive layer such as button glass that has been previously provided on the bonding surface of both substrates is melted to melt the adhesive layer between the two substrates. Complete the joining.

Next, a method of wiring to each electrode etc. when a plurality of charged particle beam devices shown in FIG. 1 are arranged in a matrix will be explained using FIG. 14. Here, as an example, a method of drawing out the wiring of the electron beam extraction electrode 2 shown in FIG. 1 will be described. The size of each substrate in FIG. 14 corresponds to the size of one of the charged particle beam device units 10 shown in FIG. 3(a). In other words, the first
Each board in the figure corresponds to the central portion of each board in FIG. 14.

A charged particle beam source 1 is provided at the center of the substrate 5a, and a plurality of insulator sections 25 are provided at the periphery. tIAm
The body portion 25 is made of an insulating material such as glass or ceramic,
A through hole 26 is provided in the center thereof. As this insulator, borosilicate glass (melting point: about 95
0° C., withstand voltage: about LO kV/cm) is suitable. The #
The body part 1a 25 was obtained by embedding two sets of borosilicate glass into the openings previously provided at the peripheral edge of the substrate 5a using a method similar to that shown in FIGS. The through-hole 26 is formed by ultrasonic machining, micro-drilling, etc. In this case, if the lateral thickness of the MA edge around the through hole 26 is set to about 1 mm, it can withstand a voltage of about 1 kV.

An electron beam extraction electrode 2 is provided in the center of the substrate 5b,
A plurality of insulator portions 25 similar to those described above and connection terminal portions 27 for drawing out wires are provided at the peripheral portion. Connection terminal part 2
7 is a through hole 28 in the shape of a truncated quadrangular pyramid, as shown in FIG.
It is constructed by depositing a wiring conductor layer 29 on the slope of the inner wall, and the wiring conductor layer 29 is connected to the electron beam extraction electrode 2.

An oxide layer 6a serving as an M-edge spacer is provided on the substrate 5b, and a circular opening 63a is provided in a portion of the oxide layer 6a corresponding to the electron beam extraction electrode 2.
A load-bearing opening 30 is provided in a portion corresponding to the quadrangular truncated pyramid-shaped through hole 28 .

On the other hand, the insulating spacer 6b has an opening 16 in the center thereof through which the charged particle beam passes, and the through-holes 26 and 28 formed in the substrates 6a and 6b described above in the peripheral part thereof.
Through holes 31 are formed at positions corresponding to the respective positions.

Substrates 5a, 5b and insulating spacer 6b configured as described above
If they are aligned, laminated, and bonded, the through holes 26, 28, 30, .
Corresponding holes 31 overlap each other to form a row of through holes that are continuous in the vertical direction. If this through hole array is filled with a conductive material such as metal to form a vertical lead wire, the lead wire will be electrically connected to the wiring conductor layer 29 at the position of the through hole 28.

Therefore, conduction can be established from above the substrate 5a, that is, from three sides of the matrix, to the extraction electrode 2.

Note that the metal filling at this time can be achieved by a method similar to that shown in FIG. Here, a method for forming a vertical lead wire for the charged particle beam extraction electrode 2 when laminating and bonding the charged particle beam source substrate 5a, the extraction electrode substrate 5b, and the insulating spacer 6b has been exemplified. The vertical lead wires can be taken out from the lens electrodes 3a, 3b and the deflection electrode 4 in the figure, as well as from the deflection coil 11 in FIG. 2, using the same method as described above.

Next, electron beam equipment units are arranged in a matrix or array to realize a multi-beam scanning electron microscope. About means for detecting secondary particles (backscattered electrons, secondary electrons, etc.) generated by radiation.

This will be explained with reference to FIGS. 16 and 17. Figure 16 shows
- electron beam equipment units are shown.

Here, a small secondary electron detector 34 such as a Schottky barrier diode is installed above the sample 8,
The detector 34 detects secondary electrons 33 generated from the sample 8 by irradiation with the electron beam 32 from the electron beam source 1.

Note that the detector 34 is formed in a ring shape around an opening 35 through which the blow mold element wire 32 passes.

FIG. 17 shows a state in which a plurality of detectors 34 having the above configuration are arranged and formed on one substrate, corresponding to each position of a plurality of electron beam device units arranged in a matrix. . That is, on the silicon substrate 36, the -blow mold wire 3 is
Openings 35 for allowing the electrons to pass through are arranged in a matrix, and a ring-shaped Au film 37 is formed around each opening in a portion to become a secondary electron detection section. In addition, this Au
The parts other than those where the film will be formed are covered with silicon oxide.

Edge r provided from each Au film to the outer periphery of the substrate: 38
By pulling out the lead wire 39 toward the detector, each detector can be driven independently. By applying a reverse bias voltage between the Au film 37 and the silicon substrate 36, carriers are generated in the silicon substrate region directly under the Au film. Sample 8 is placed in this carrier generation section.
When the secondary electrons 33 are incident, the concentration of generated carriers changes. Therefore, by detecting this change in carrier concentration, the amount of −U-order electrons incident from the sample can be detected. In addition, the incident-quadratic type r・
If the energy is small, the detection signal may be appropriately amplified.

A secondary electron detector arranged in a matrix can be formed as described in , and by combining this with the electron beam irradiation optical system arranged in a matrix as described above, a multi-beam detector can be formed. A scanning electron microscope can be realized.

As the accelerating voltage of the electron beam irradiated onto the sample decreases, the resolution of the scanning electron microscope inevitably decreases, but as shown in FIG. The resolution can be improved by providing .

The process of forming the diaphragm aperture 46a will be explained using FIGS. 19(d) to 19(c). First, an oxide film 48 is formed on both sides of the silicon substrate 47, and then...
An Au and Cr film 49 is formed on the oxide film (see (a) in the same figure).
)). Furthermore, FIGS. 4(a) to (c) or 6(a)
) to (c), the aperture aperture 4-6 a
A circular pattern 4f'3b corresponding to the dimensions of is formed by penetrating the Au, Cr film 49 and oxide film 48 (FIG. 4(b)). After that, ID between rectangles is formed on the oxide film on the bottom surface.
48 a is formed, and the silicon substrate 47 is etched from below through this rectangular space f )). Note that if a metal film such as Au or Cr is vapor-deposited on the lower surface side, it is possible to obtain an aperture of 1 which is not charged by reflected electrons or the like. After this, Au and C on the top side
By removing the R film by etching, an aperture opening of desired size can be formed. Furthermore, it goes without saying that this diaphragm aperture can be formed in accordance with the arrangement of the electron beam device units.

In the following second embodiment, the case where a plurality of charged particle beam device units are arranged and formed in a 71-liquid shape or an array shape has been mainly described as an example. It is also possible to cut out a single unit 1- from the device and use it alone, and when using it under bad environmental conditions, it is possible to cut out a single charged particle beam device unit and store it in a disposable form. It is also possible to use In addition, the multi-beam charged particle beam device according to the present invention can be used as a scanning electron microscope that simultaneously observes multiple locations on the surface of a sample, an electron beam lithography device that simultaneously draws multiple semiconductor elements, and an electron beam recording device. It is possible to expand the application to devices, etc.

[Effect of the invention 1] According to the present invention, by adding not only a focusing means but also a deflecting means for the generated charged particle beam to a miniaturized charged particle beam device, the generated charged particle beam can be controlled more precisely from 1 to 1. It is now possible to roll, and moreover, it is possible to integrate multiple charged particle beam device units on one chip. As a result, it becomes possible to expand the application to microelectron beam recording devices, multi-beam type electron beam lithography devices, multi-beam type scanning electron microscopes, etc. In particular, since an ultra-miniaturized charged particle beam device can be obtained, it can be inserted into various vacuum devices such as semiconductor dry etching equipment as a scanning electron microscope to directly observe physical and chemical phenomena during the processing process. It becomes possible to solve the problem.

[Brief explanation of drawings]

FIG. 1 is a schematic configuration diagram of a charged particle beam device according to an embodiment of the present invention. FIG. 2 is a schematic configuration diagram of a charged particle beam device according to another embodiment of the present invention. FIG. 3 is a schematic diagram showing a state in which a plurality of charged particle beam device units are arranged in a matrix on a substrate 2 with reference to alignment marks. FIG. 4 is a process explanatory diagram showing a processing process for forming a through hole in a silicon substrate. FIG. 5 is a process explanatory diagram showing a processing process for forming a charged particle beam source on a silicon substrate. FIG. 6 is a process explanatory diagram showing the formation process of a charged particle beam extraction electrode. FIG. 7 is a process explanatory diagram showing a process of forming a lens electrode for focusing a charged particle beam. FIG. 8 is a process explanatory diagram showing the formation process of an electrostatic deflection electrode for charged particle beam scanning. FIG. 9 is a process explanatory diagram showing the process of creating an electromagnetic deflection coil for charged particle beam scanning. FIG. 10 is a process explanatory diagram showing a method of filling a deep hole with metal to form an electromagnetic deflection coil. Fig. 11 is a process explanatory diagram showing a method of electrically connecting metal parts buried in deep holes to form an electromagnetic deflection coil; figure. FIG. 13 is a schematic configuration diagram of an apparatus for laminating and bonding a plurality of substrates. FIG. 14 is a schematic perspective view showing a wiring extraction method for a charged particle beam extraction electrode. FIG. 15 is a schematic cross-sectional view showing a method for extracting lead wires from a charged particle beam extraction electrode. FIG. 16 is a schematic cross-sectional view showing the configuration of a secondary electron detector that detects secondary electrons emitted from a sample. FIG. 17 is a schematic plan view showing a state in which a plurality of secondary electron detectors are arranged in a matrix on a substrate. FIG. 18 is a schematic cross-sectional view showing the location of an aperture plate for narrowing down the charged particle beam. FIG. 19 is a process explanatory diagram showing the process of creating the aperture plate;
It is. In the figure, 1: Electron beam source. 2: Electron beam extraction electrode. 3: Objective lens. 3a, 3b: lens electrodes. 4: Electrostatic deflection electrode. 5a-5e: Substrate. 6a-6d: Insulator spacer. 7a-7e Dioxide film. 8: Sample. 11: Electromagnetic deflection coil. 12: Deflection coil board.

Claims (1)

[Scope of Claims] 1. A substrate equipped with a charged particle beam generating means for generating a charged particle beam, a substrate equipped with a charged particle beam focusing means for focusing the generated charged particle beam on a sample, and a substrate equipped with a charged particle beam focusing means for focusing the generated charged particle beam on a sample; and a substrate equipped with a charged particle beam deflection means for deflecting and scanning the charged particle beam on the sample, and these substrates are stacked and bonded with an insulating spacer interposed between each substrate. charged particle beam device. 2. The charged particle beam device according to claim 1, wherein each of the substrates has an alignment mark for relative alignment between the substrates during lamination and bonding of the substrates. 3. The charged particle beam device according to claim 1, wherein the charged particle beam deflection means is an electrostatic charged particle beam deflection means. 4. The charged particle beam device according to claim 1, wherein the charged particle beam deflection means is an electromagnetic charged particle beam deflection means. 5. A claim further comprising a substrate equipped with a detection means for detecting secondary particles released from the sample upon irradiation with the charged particle beam from the charged particle beam generation means. Item 1. Charged particle beam device according to item 1. 6. The charged particle beam device according to claim 1, further comprising a constrictor having a function of constricting the charged particle beam from the charged particle beam generating means. 7. The substrate equipped with the charged particle beam generating means described above is made of a silicon single crystal, and the charged particle beam generating means is charged by an electroforming method into a square pyramid-shaped minute recess formed on the surface of the silicon single crystal. The charged particle beam device according to claim 1, further comprising a charged particle beam emitting point formed by filling a particle emitting material. 8. A substrate equipped with a plurality of charged particle beam generation sources, and a plurality of charged particle beam focusing lenses that respectively focus a plurality of charged particle beams from the plurality of charged particle beam generation sources onto a sample. a plurality of charged particle beam deflectors each deflecting and scanning a plurality of charged particle beams focused by the plurality of charged particle beam focusing lenses; A charged particle beam device characterized in that each layer is laminated and bonded with an insulating spacer interposed between them. 9. The charged particle beam device according to claim 8, wherein the plurality of charged particle beam generation sources described above are arranged in a matrix on the substrate. 10. The charged particle beam device according to claim 8, wherein each of the substrates has an alignment mark for relative alignment between the substrates during lamination and bonding of the substrates. 11. The charged particle beam device according to claim 8, wherein the charged particle beam deflector is an electrostatic deflector. 12. The charged particle beam device according to claim 8, wherein the charged particle beam deflector is an electromagnetic deflector. 13. Further comprising a substrate equipped with a plurality of secondary particle detectors for detecting secondary particles emitted from each area on the sample irradiated by each of the plurality of charged particle beams. The charged particle beam device according to claim 8, characterized in that: 14. Claim 8, further comprising a substrate provided with a plurality of narrowing means for narrowing down each of the charged particle beams from the plurality of charged particle beam generation sources.
The charged particle beam device described. 15. The substrate provided with the plurality of charged particle beam generation sources is made of a silicon single crystal, and the charged particle beam emitting point of each of the plurality of charged particle beam generation sources is attached to the surface of the silicon single crystal. 2. The charged particle beam device according to claim 1, wherein the charged particle beam device is formed by filling a charged particle emitting material into the formed quadrangular pyramidal minute recess by electroforming.