JPH04176882A - Method for etching of copper sheet bonded ceramic substrate - Google Patents
Method for etching of copper sheet bonded ceramic substrateInfo
- Publication number
- JPH04176882A JPH04176882A JP2301113A JP30111390A JPH04176882A JP H04176882 A JPH04176882 A JP H04176882A JP 2301113 A JP2301113 A JP 2301113A JP 30111390 A JP30111390 A JP 30111390A JP H04176882 A JPH04176882 A JP H04176882A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- ceramic substrate
- acid
- copper plate
- bonded ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 49
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 24
- 239000010949 copper Substances 0.000 title claims abstract description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000000758 substrate Substances 0.000 title claims abstract description 22
- 239000000919 ceramic Substances 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 20
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 15
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 6
- UKLNMMHNWFDKNT-UHFFFAOYSA-M sodium chlorite Chemical compound [Na+].[O-]Cl=O UKLNMMHNWFDKNT-UHFFFAOYSA-M 0.000 claims abstract description 6
- 229960002218 sodium chlorite Drugs 0.000 claims abstract description 6
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000000243 solution Substances 0.000 claims description 10
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 239000007864 aqueous solution Substances 0.000 claims description 2
- ZURAKLKIKYCUJU-UHFFFAOYSA-N copper;azane Chemical compound N.[Cu+2] ZURAKLKIKYCUJU-UHFFFAOYSA-N 0.000 claims 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims 1
- VCJMYUPGQJHHFU-UHFFFAOYSA-N iron(3+);trinitrate Chemical compound [Fe+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O VCJMYUPGQJHHFU-UHFFFAOYSA-N 0.000 abstract description 14
- 239000002253 acid Substances 0.000 abstract description 9
- 238000005219 brazing Methods 0.000 abstract description 6
- 239000000945 filler Substances 0.000 abstract description 4
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 1
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 1
- 229910011208 Ti—N Inorganic materials 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- -1 chlorine ions Chemical class 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 description 1
- 239000004480 active ingredient Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000036571 hydration Effects 0.000 description 1
- 238000006703 hydration reaction Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野］
本発明は銅板接合セラミックス基板のエツチング方法に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of etching a ceramic substrate bonded to a copper plate.
〔従来の技術］
従来の銅板接合セラミックス基板のエツチング方法には
次の方法がある。[Prior Art] Conventional methods for etching copper plate-bonded ceramic substrates include the following methods.
■ 銅板を表面酸化処理されたセラミックス基板上に直
接接合した後、銅板にレジストをつけて常法でエツチン
グする方法（特開昭６２−１９７３７３号公報）。(1) A method in which a copper plate is directly bonded onto a ceramic substrate whose surface has been oxidized, and then a resist is applied to the copper plate and etched using a conventional method (Japanese Patent Application Laid-Open No. 197373/1983).
■ セラミックス基板上にろう材をべたに接合した後、
パターンエツチングを行う方法。■ After bonding the brazing filler metal solidly onto the ceramic substrate,
How to do pattern etching.
［発明が解決しようとする課題］
上記■の方法は熱サイクル負荷により銅板の接合強度が
著しく低下し、剥れ、割れなどが起こりやすい問題があ
る。[Problems to be Solved by the Invention] The above method (1) has the problem that the bonding strength of the copper plates is significantly reduced due to thermal cycle load, and peeling, cracking, etc. are likely to occur.
これに対して、上記■の方法はパターンの精度が悪く、
ろう材を精度よくパターン加工することは不可能であっ
た。On the other hand, method (■) above has poor pattern accuracy;
It has been impossible to precisely pattern the brazing filler metal.
本発明はこのような問題点を除去した銅板接合セラミッ
クス基板のエツチング方法を提供することを目的とする
。It is an object of the present invention to provide a method for etching a copper plate bonded ceramic substrate which eliminates such problems.
［課題を解決するための手段］
本発明は、銅板接合セラミックス基板をエツチングする
に当り、水溶液１ｅ当たり、硫酸、硝酸、過塩素酸の群
より選ばれる１種以上を合計で０．２モル〜４モル、及
び硝酸鉄（ＩＩＩ）０．５モル〜５モルを含有するエツ
チング液を用いてエツチングすることを特徴とする銅板
接合セラミックス基板のエツチング方法である。 この
場合、予め第１段として塩化鉄（ＩＩＩ） 、塩化銅（
４１）、硫酸十過酸化水素、及びアンモニアＥ（ＩＩ）
錯体から選ばｎた何れかを主要な作用成分とするエツチ
ング液を用いてエツチングを行い、この後第２段として
、上記エツチングを行うとエツチングファクタを向上さ
せることができ、さらに好適である。[Means for Solving the Problems] In the present invention, when etching a copper plate-bonded ceramic substrate, a total of 0.2 mol or more of one or more selected from the group of sulfuric acid, nitric acid, and perchloric acid is added per 1e of aqueous solution. This is a method for etching a ceramic substrate bonded to a copper plate, characterized in that etching is performed using an etching solution containing 4 mol of iron(III) and 0.5 mol to 5 mol of iron(III) nitrate. In this case, iron (III) chloride, copper chloride (
41), sulfuric acid decahydrogen peroxide, and ammonia E(II)
It is more preferable to carry out etching using an etching solution containing one selected from the complexes as a main active ingredient, and then carry out the above-mentioned etching as a second step, since the etching factor can be improved.
さらに、エツチングの後処理として、水１００重量部中
に水酸化ナトリウム３〜４０重量部、及び亜塩素酸ナト
リウム１〜３０重量部を含有する処理液に５０℃以上で
浸漬するとろう材と基板層との間に存在するＴｉＮ層を
除去することができ、その場合処理中又は処理後に超音
波を照射すると能率を向上することができる。Furthermore, as a post-etching treatment, the brazing material and the substrate layer are immersed at 50°C or higher in a treatment solution containing 3 to 40 parts by weight of sodium hydroxide and 1 to 30 parts by weight of sodium chlorite in 100 parts by weight of water. The TiN layer present between the two can be removed, and in that case, irradiation with ultrasonic waves during or after the treatment can improve efficiency.
［作用］
本発明方法では、セラミックスと銅が接合された銅接合
体用のエツチング液として、セラミックスを侵蝕せず、
エツチング速度が速く、レジストが侵されることがなく
、エツチングファクタがよい、塩素イオンを含まないも
のである。[Function] In the method of the present invention, as an etching liquid for a copper bonded body in which ceramics and copper are bonded, it does not corrode the ceramics.
It has a fast etching speed, does not attack the resist, has a good etching factor, and does not contain chlorine ions.
本発明に係るエツチング液の処方は、ハロゲンイオンを
含まない酸と硝酸鉄（ＩＩＩ）を水に濡解して製造する
。The etching solution according to the present invention is prepared by dissolving a halogen ion-free acid and iron (III) nitrate in water.
本発明ではハロゲンイオンを含まない酸を用いる。この
ような酸としては、硫酸、硝酸又は過塩素酸を単独又は
混合して用いることができる。過塩素酸は塩素を成分と
して含有するが、塩素イオンを放たないので用いること
が可能である。In the present invention, an acid that does not contain halogen ions is used. As such acids, sulfuric acid, nitric acid, or perchloric acid can be used alone or in combination. Although perchloric acid contains chlorine as a component, it can be used because it does not release chlorine ions.
酸の濃度は溶液１β当り、０．２モル〜４モルの範囲に
限定され、好ましくは濡液１ρ当り０．５〜２．５モル
である。酸の濃度が溶ｔｉ１！当り０．２モル未満であ
ると腐食作用が穏やかになりすぎるためエツチング速度
の著しい低下をきたし、また洛ｍ １ ！２当り４モル
を越えると、腐食作用が苛烈になりすぎるため、レジス
トの腐食やエツチングファクタが悪化するので用いられ
ない。The concentration of acid is limited to a range of 0.2 to 4 moles per β of solution, preferably 0.5 to 2.5 moles per ρ of wetting liquid. The concentration of acid is 1! If the amount is less than 0.2 mol per mole, the corrosion effect will be too mild, resulting in a significant decrease in the etching rate. If the amount exceeds 4 moles per 2 moles, the corrosive action becomes too severe and the resist corrosion and etching factor deteriorate, so it is not used.
これらの酸は単独で用いることもできるが、２種以上を
複合して配合することもできる。この場合でも合計の酸
のモル数が４モルを越えないように注意する。These acids can be used alone or in combination of two or more. Even in this case, care must be taken so that the total number of moles of acid does not exceed 4 moles.
硝酸鉄（ＩＩＩ）には、種々の水和量の固体又は液状品
があるが、何れを用いてもよく、純分として浴液１β当
り、０．５〜５モルの範囲含むように箔解する。硝酸鉄
（Ｉｎ）の濃度が温液ＩＩ２当り０．５モル未満である
と腐食作用が穏やかになりすぎるためエツチング速度の
著しい低下を来し、また溶＝ＩＩ２当り５モルを越える
と、エツチングファクタが極端に悪化する傾向があるの
で用いられない。好ましくは１．５〜３モルである。Iron (III) nitrate is available in solid or liquid form with various hydration levels, but any may be used. do. If the concentration of iron nitrate (In) is less than 0.5 mol per hot liquid II2, the etching rate will be significantly reduced because the corrosive action will be too mild, and if it exceeds 5 mol per hot liquid II2, the etching factor will decrease. It is not used because it tends to cause extreme deterioration. Preferably it is 1.5 to 3 mol.
酸と硝酸鉄（ＩＩＩ）の比率には、特に限定はなく、エ
ツチング速度とエツチングファクタを勘案して適宜選択
することができる。The ratio of acid to iron (III) nitrate is not particularly limited, and can be selected as appropriate in consideration of the etching rate and etching factor.
次にろう材と基板間の反応層にはＴｉＮが存在している
。これを水１００重量部中に水酸化ナトリウム３〜４０
重量部、及び亜塩素酸ナトリウム１〜３０重量部を含有
する処理液に５０℃以上で浸漬しＴｉＮを湿式で剥離す
る。Next, TiN is present in the reaction layer between the brazing material and the substrate. Add 3 to 40 parts of sodium hydroxide to 100 parts by weight of water.
TiN is wet-stripped by immersing it in a treatment solution containing 1 to 30 parts by weight of sodium chlorite and 1 to 30 parts by weight of sodium chlorite at 50° C. or higher.
硫酸、硝酸、過塩素酸の量を合計で０．２〜４モル／ε
に限定した理由は、０．２モル／ρ未満であるとエツチ
ング速度が著しく低下し、４モル／！！を超えるとサイ
ドエツチング量が増大し、かつレジストの耐性も劣化す
るので、エツチングファクタが悪化してしまうためであ
る。The total amount of sulfuric acid, nitric acid, and perchloric acid is 0.2 to 4 mol/ε
The reason for limiting it to 4 mol/! is that if it is less than 0.2 mol/ρ, the etching rate will drop significantly. ! This is because if the value exceeds 1, the amount of side etching increases and the resistance of the resist deteriorates, resulting in a worsening of the etching factor.
硝酸鉄（ＩＩＩ）の濃度は１℃あたり０．５〜５モル含
有することが望ましい。この範囲より濃度が低くとも高
くともエツチング速度が低下するため好ましくない。The concentration of iron (III) nitrate is preferably 0.5 to 5 mol per 1°C. If the concentration is lower or higher than this range, the etching rate will decrease, which is not preferable.
水酸化ナトリウムの濃度は水１００重量部中３重量部未
満であると、ＴｉＮの剥離が十分に行われず、また４０
重量部を超えると基板の溶解が起こるおそれがあり、使
用できない。また、亜塩素酸ナトリウムの濃度は水１０
０重量部中１重量部未満であると、やはりＴｉＮの剥離
が十分に行われない。また３０重量部を超えると不経済
である上、銅板の腐食が進行することがあり、不適であ
る。またこの時の処理温度が５０℃未満であるとＴｉＮ
の剥離に長時間を要することになり、実用的でない。If the concentration of sodium hydroxide is less than 3 parts by weight per 100 parts by weight of water, TiN will not be peeled off sufficiently;
If the amount exceeds parts by weight, the substrate may melt and cannot be used. In addition, the concentration of sodium chlorite is water 10
If it is less than 1 part by weight out of 0 parts by weight, TiN will not be peeled off sufficiently. Moreover, if it exceeds 30 parts by weight, it is not only uneconomical, but also corrosion of the copper plate may progress, making it unsuitable. Moreover, if the processing temperature at this time is less than 50°C, TiN
It takes a long time to peel off, which is not practical.
［実施例］
銅板（０，３ｕｍ厚）をＡ３Ｎ基板にＡｇ−Ｃｕ−Ｔｉ
ろうで真空接合した。硫酸（１ｍＯ℃／シ）と硝酸鉄（
２ｍｏｎ／ｎ）を水１００リットルに加えてエツチング
した後、Ｎａｐ）１２０重量部とＮａＣｇ０２１０重量
部を水」００重量部に加えた処理液で７０℃で３０分処
理した。この銅板接合基板の耐熱衝撃試験を行ったとこ
ろ、１００サイクルを越えても全（間要がなかった。[Example] Ag-Cu-Ti copper plate (0.3 um thick) on A3N board
Vacuum bonded with wax. Sulfuric acid (1mO℃/sh) and iron nitrate (
2 mon/n) was added to 100 liters of water for etching, and then treated at 70°C for 30 minutes with a treatment solution prepared by adding 120 parts by weight of Nap) and 10 parts by weight of NaCg to 00 parts by weight of water. When this copper plate bonded substrate was subjected to a thermal shock resistance test, it was found that even after 100 cycles, there was no need for a thermal shock test.
［発明の効果］
本発明によれば、銅板接合基板のパターン加工を高精度
で行うことができ、ろう材中にＴｉを混入したろう材を
用いた場合でも、ＴｉＮ層を除去することができる。こ
のようにして処理された銅板接合板は熱サイクル特性が
すぐれている。[Effects of the Invention] According to the present invention, pattern processing of a copper plate bonded substrate can be performed with high precision, and even when a brazing filler metal containing Ti is used, a TiN layer can be removed. . The copper plate bonded plate treated in this manner has excellent thermal cycle characteristics.
出騨人 川崎製鉄株式会社Outer Kawasaki Steel Co., Ltd.
Claims (1)
、水溶液１ｌ当り、硫酸、硝酸、過塩素酸の群より選ば
れる１種以上を合計で ０．２モル〜４モル、及び硝酸鉄（III）０．５モル〜
５モルを含有するエッチング液を用いてエッチングする
ことを特徴とする銅板接合セラミックス基板のエッチン
グ方法。 ２ 銅板接合セラミックス基板をエッチングする方法に
おいて、第１段として塩化鉄 （III）、塩化銅（II）、硫酸＋過酸化水素、及びアン
モニア銅（II）錯体から選ばれた何れかを主要な作用成
分とするエッチング液を用いてエッチングを行い、この
後第２段として、請求項１記載のエッチングを行うこと
を特徴とする銅板接合セラミックス基板のエッチング方
法。 ３ エッチングの後処理として、さらに水１００重量部
中、水酸化ナトリウム３〜４０重量部、及び亜塩素酸ナ
トリウム１〜３０重量部を含有する処理液に５０℃以上
で浸漬することを特徴とする請求項１又は２記載の銅板
接合セラミックス基板のエッチング方法。 ４ エッチングの後処理において、該処理中又は処理後
に超音波を照射することを特徴とする請求項３記載の銅
板接合セラミックス基板のエッチング方法。[Claims] 1. When etching a copper plate-bonded ceramic substrate, a total of 0.2 to 4 moles of one or more selected from the group of sulfuric acid, nitric acid, and perchloric acid, and iron nitrate per liter of aqueous solution. (III) 0.5 mol ~
A method for etching a ceramic substrate bonded to a copper plate, the method comprising etching using an etching solution containing 5 mol. 2. In a method of etching a copper plate-bonded ceramic substrate, in the first step, one selected from iron chloride (III), copper chloride (II), sulfuric acid + hydrogen peroxide, and ammonia copper (II) complex is used as the main action. A method for etching a copper plate-bonded ceramic substrate, characterized in that etching is performed using an etching solution as a component, and then the etching according to claim 1 is performed as a second stage. 3. As a post-etching treatment, the material is further immersed at 50° C. or higher in a treatment solution containing 3 to 40 parts by weight of sodium hydroxide and 1 to 30 parts by weight of sodium chlorite in 100 parts by weight of water. The method of etching a copper plate bonded ceramic substrate according to claim 1 or 2. 4. The method of etching a copper plate-bonded ceramic substrate according to claim 3, wherein in the etching post-treatment, ultrasonic waves are irradiated during or after the etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301113A JPH04176882A (en) | 1990-11-08 | 1990-11-08 | Method for etching of copper sheet bonded ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2301113A JPH04176882A (en) | 1990-11-08 | 1990-11-08 | Method for etching of copper sheet bonded ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04176882A true JPH04176882A (en) | 1992-06-24 |
Family
ID=17892995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2301113A Pending JPH04176882A (en) | 1990-11-08 | 1990-11-08 | Method for etching of copper sheet bonded ceramic substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04176882A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1298970A2 (en) * | 2001-09-28 | 2003-04-02 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding circuit board |
| CN1301937C (en) * | 2002-02-26 | 2007-02-28 | 马克斯·施洛特尔股份有限两合公司 | Method for metallizing titanate-based ceramics |
| CN113493352A (en) * | 2021-06-15 | 2021-10-12 | 西安微电子技术研究所 | Decolorizing solution and decolorizing method for DBC ceramic plate substrate |
-
1990
- 1990-11-08 JP JP2301113A patent/JPH04176882A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1298970A2 (en) * | 2001-09-28 | 2003-04-02 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding circuit board |
| EP1298970A3 (en) * | 2001-09-28 | 2004-10-20 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding circuit board |
| US6918529B2 (en) | 2001-09-28 | 2005-07-19 | Dowa Mining Co., Ltd. | Method for producing metal/ceramic bonding circuit board |
| CN1301937C (en) * | 2002-02-26 | 2007-02-28 | 马克斯·施洛特尔股份有限两合公司 | Method for metallizing titanate-based ceramics |
| CN113493352A (en) * | 2021-06-15 | 2021-10-12 | 西安微电子技术研究所 | Decolorizing solution and decolorizing method for DBC ceramic plate substrate |
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