JPH04174401A - Reflecter - Google Patents
ReflecterInfo
- Publication number
- JPH04174401A JPH04174401A JP22104190A JP22104190A JPH04174401A JP H04174401 A JPH04174401 A JP H04174401A JP 22104190 A JP22104190 A JP 22104190A JP 22104190 A JP22104190 A JP 22104190A JP H04174401 A JPH04174401 A JP H04174401A
- Authority
- JP
- Japan
- Prior art keywords
- reflector
- layer
- base body
- silicon dioxide
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 7
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 23
- 239000011241 protective layer Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 16
- 239000002356 single layer Chemical group 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 5
- 238000005096 rolling process Methods 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 3
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 3
- 238000005266 casting Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Landscapes
- Optical Elements Other Than Lenses (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はOA機器などの照明系を構成するに用いられる
反射板に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a reflector plate used for constructing a lighting system of OA equipment or the like.
複写機などのOA機器における光源を備えた照明装置で
用いられている反射板は、光源から放射される光束を所
望の方向へ効率よく反射して必要な対象を照明するため
の器具であって、その鏡面形状も、用途に応じて平面状
のものから球面、楕円面、放物面など、種り使い分けら
れている。A reflector used in a lighting device equipped with a light source in OA equipment such as a copying machine is a device that efficiently reflects the luminous flux emitted from the light source in a desired direction to illuminate a necessary target. The shape of the mirror surface varies depending on the purpose, from flat to spherical, ellipsoidal, parabolic, etc.
かかる照明系における反射板は、その鏡面がとくに精密
である必要はないけれども特殊な形状であるために、通
常アルミニウム合金の圧延や鋳造成いは切削等によって
所望の形状に成形したのちその反射面部分をラッピング
や電解研磨するなどによって鏡面加工して製造されてい
る。Although the reflective plate in such lighting systems does not need to have a particularly precise mirror surface, it does have a special shape, so it is usually formed into the desired shape by rolling or casting aluminum alloy, or by cutting, and then the reflective surface is It is manufactured by mirror-finishing the parts by lapping or electropolishing.
このような反射板は例えば複写機の照明装置等に用いる
と、光源として用いられるハロゲンランプによる点滅の
繰り返し照射を受けるため、連続的に使用するときには
探射板の温度が250〜300°C程度にもなることが
しばしばであり、その反射面が酸化をうけてアルマイト
化し、次第にクランクが発生して鏡面が荒れてしまうと
いう問題があった。When such a reflector is used, for example, in the lighting system of a copying machine, it is exposed to repeated flashing irradiation from a halogen lamp used as a light source, so when used continuously, the temperature of the detector plate may rise to around 250 to 300°C. There was a problem in that the reflective surface was oxidized and turned into alumite, which gradually caused cranks to occur and the mirror surface to become rough.
これに対して、鏡面部分の酸化劣化を防止するために、
保護膜としてシリコン層を設ける方法が提案されている
が、このように構成された反射板でも使用環境でのクラ
ックや剥離などの経時的劣化が充分に抑制できず、耐熱
性や耐湿性においても満足できるものではなかった。On the other hand, in order to prevent oxidation deterioration of the mirror surface,
A method of providing a silicon layer as a protective film has been proposed, but even reflectors configured in this way cannot sufficiently suppress deterioration over time such as cracks and peeling in the usage environment, and the heat resistance and moisture resistance are also poor. It wasn't satisfying.
本発明は上述の事情に鑑みてなされたものであって、そ
の目的とするところは、耐熱性及び耐湿性に優れ、繰り
返して大幅に変化する環境条件の下で使用しても酸化に
よる剥離や荒れが発生することなく安定して長期間使用
することができる反射板を提供することにある。The present invention has been made in view of the above-mentioned circumstances, and its purpose is to have excellent heat resistance and moisture resistance, and to prevent peeling due to oxidation even when used repeatedly under significantly changing environmental conditions. To provide a reflector that can be stably used for a long period of time without causing roughness.
かかる本発明の目的は、所定の形状を有する光輝アルミ
ニウム合金製反射板基体の鏡面部分に二酸化珪素の下層
と五酸化タンタルの上層との二層構成または窒化アルミ
ニウムの単層構成の表面保護層を設けたことを特徴とす
る反射板によって達成することができる。The object of the present invention is to provide a surface protective layer with a two-layer structure of a lower layer of silicon dioxide and an upper layer of tantalum pentoxide or a single-layer structure of aluminum nitride on the mirror surface portion of a bright aluminum alloy reflector substrate having a predetermined shape. This can be achieved by a reflective plate characterized by the provision of a reflector plate.
本発明の反射板を構成する基体は、光輝アルミニウム合
金の圧延や鋳造成いは切削等によって所望の形状に成形
したのちラッピングや電解研磨するなどによって鏡面加
工したものであって、従来から反射板として用いられて
いるものと同様な基体が用いられる。The substrate constituting the reflector of the present invention is a bright aluminum alloy that is formed into a desired shape by rolling, casting, cutting, etc., and then mirror-finished by lapping, electrolytic polishing, etc. A substrate similar to that used as a substrate is used.
本発明においては、かかる基体の鏡面部分に二酸化珪素
の下層と五酸化タンタルの上層とを例えば真空蒸着法や
スパッタリング法などにより順次積層して二層構成の表
面保護層を設けるか、または窒化アルミニウムの単層構
成の表面保護層を上記と同様な方法によって設けて、反
射板を形成する。かかる表面保護層の厚さは、二酸化珪
素と五酸化タンタルの二層構成の場合は041〜0.5
μm程度、好ましくは0.3μm前後であるのがよ(、
窒化アルミニウムの単層構成の場合は0,08〜0゜2
μm程度、好ましくは0.12μm前後であるのがよい
。In the present invention, a two-layer surface protective layer is provided by sequentially laminating a lower layer of silicon dioxide and an upper layer of tantalum pentoxide on the mirror surface portion of the substrate by, for example, vacuum evaporation or sputtering, or a surface protective layer of aluminum nitride is provided. A surface protective layer having a single layer structure is provided by the same method as described above to form a reflective plate. The thickness of such a surface protective layer is 0.41 to 0.5 in the case of a two-layer structure of silicon dioxide and tantalum pentoxide.
It is about μm, preferably around 0.3 μm (
In the case of a single layer structure of aluminum nitride, it is 0.08~0゜2.
The thickness is preferably about μm, preferably around 0.12 μm.
本発明の反射板は、耐熱衝撃性及び耐温湿性に優れた保
護層が設けられていて、耐久性が著しく改良されたもの
である。The reflective plate of the present invention is provided with a protective layer having excellent thermal shock resistance and temperature and humidity resistance, and has significantly improved durability.
〔実施例1〕
光輝アルミニウム合金(A5650)を用い、圧延法に
よって第1図に示した横断面形状を有する反射板基体1
を作成した。[Example 1] Using a bright aluminum alloy (A5650), a reflector substrate 1 having the cross-sectional shape shown in FIG. 1 was produced by a rolling method.
It was created.
この基体1を充分に精密洗浄し乾燥したのちに真空蒸着
槽内に取付け、約170℃に加熱した状態で真空度I
X 10−’Torrまで排気し、まず二酸化珪素のタ
ーゲットを電子ビーム加熱することにより、基体1の鏡
面部分2の上に厚さ0.17μmの下層3aを蒸着した
。続いて五酸化タンタルのターゲットを用いて下層3a
の上に厚さ0.16μmの上層3bを蒸着し、厚さ0.
33μmの表面保護層3を積層形成して、本発明の反射
板Aを得た。After thorough precision cleaning and drying of this substrate 1, it was installed in a vacuum evaporation tank and heated to about 170°C with a vacuum degree of I
The lower layer 3a having a thickness of 0.17 μm was deposited on the mirror surface portion 2 of the substrate 1 by evacuation to X 10 −′ Torr and first heating a silicon dioxide target with an electron beam. Subsequently, the lower layer 3a is formed using a target of tantalum pentoxide.
An upper layer 3b with a thickness of 0.16 μm is deposited on top of the layer 3b with a thickness of 0.16 μm.
A reflective plate A of the present invention was obtained by laminating a surface protective layer 3 with a thickness of 33 μm.
〔実施例2〕
反射板基体を光輝アルミニウム合金(A6063)で形
成した他は実施例1と同様にして、基体の鏡面部分の上
に順次厚さ0.14μmの二酸化珪素の下層と厚さ0.
15μmの五酸化タンタルの上層を積層し、厚さ0.2
9μmの表面保護層を形成して、本発明の反射板Bを得
た。[Example 2] In the same manner as in Example 1 except that the reflector substrate was formed of bright aluminum alloy (A6063), a lower layer of silicon dioxide with a thickness of 0.14 μm and a lower layer of silicon dioxide with a thickness of 0. ..
A top layer of tantalum pentoxide of 15 μm is laminated to a thickness of 0.2
A surface protective layer of 9 μm was formed to obtain a reflective plate B of the present invention.
〔実施例3〕
実施例1において用いたと同じ反射板基体を用い、5
X 10−5〜I X 10−’Torrの窒素ガス雰
囲気下で窒化アルミニウムターゲットを電子ビーム加熱
して蒸発させ、基体の鏡面部分の上に厚さ0012μm
の窒化アルミニウムの表面保護層を蒸着して、本発明の
反射板Cを得た。[Example 3] Using the same reflector substrate as used in Example 1, 5
An aluminum nitride target was evaporated by electron beam heating in a nitrogen gas atmosphere of X 10-5 to I
A surface protection layer of aluminum nitride was deposited to obtain a reflector C of the present invention.
〔実施例4〕
実施例2において用いたと同じ反射板基体を用いた他は
実施例3と同様な手順に従って、基体の鏡面部分の上に
厚さ0.10μmの窒化アルミニウムの表面保護層を蒸
着して、本発明の反射板りを得た。[Example 4] A surface protective layer of aluminum nitride with a thickness of 0.10 μm was vapor-deposited on the mirrored portion of the substrate according to the same procedure as in Example 3 except that the same reflector substrate as used in Example 2 was used. As a result, a reflector plate of the present invention was obtained.
〔対照例1〕
実施例1において用いたと同じ反射板基体を用い、二酸
化珪素ターゲットのみを用いたほかは実施例1と同様に
して、基体の鏡面部分の上に厚さ0.30μmの二酸化
珪素層を蒸着し、対照の反射板Eを得た。[Comparative Example 1] The same reflector substrate as used in Example 1 was used, and silicon dioxide with a thickness of 0.30 μm was deposited on the mirrored portion of the substrate in the same manner as in Example 1 except that only a silicon dioxide target was used. A control reflector E was obtained by depositing the layer.
〔対照例2〕
対照例1と全く同様にして、基体の鏡面部分の上に厚さ
0.15μmの二酸化珪素層を蒸着し、対照の反射板F
を得た。[Comparative Example 2] In exactly the same manner as in Comparative Example 1, a silicon dioxide layer with a thickness of 0.15 μm was deposited on the mirror surface portion of the substrate, and a control reflector F was formed.
I got it.
これらの反射板について下記のような耐温湿度試験及び
点灯試験(熱衝撃試験)を行ない、耐久性を調べた。These reflectors were subjected to the following temperature/humidity resistance test and lighting test (thermal shock test) to examine their durability.
11回度藍脹
温度80°C1相対湿度90%の雰囲気中に100時間
放置した後乾燥させ、表面保護層の状態を観察した。After being allowed to stand for 100 hours in an atmosphere with an indigo temperature of 80° C. and a relative humidity of 90%, it was dried and the state of the surface protective layer was observed.
対照の反射板EおよびFでは保護層に曇りや剥離が発生
していたのに対し、本発明の反射板A、B、CおよびD
では曇りの発生はもちろん、何等の変化も認められなか
った。In the control reflectors E and F, clouding and peeling occurred in the protective layer, whereas in the reflectors A, B, C, and D of the present invention, the protective layer was cloudy and peeled.
In addition to the occurrence of cloudiness, no changes were observed.
立肛拭豆
1350Wのハロゲンランプによって6秒間照射と5秒
間消灯とを20回繰り返したのち10分間休止する試験
を100時間実施して、表面保護層の状態を観察した。A test was conducted for 100 hours in which irradiation for 6 seconds and turning off for 5 seconds was repeated 20 times using a 1350 W halogen lamp, followed by a rest for 10 minutes, and the state of the surface protective layer was observed.
対照の反射板Eでは保護層に一部剥離が、またFではさ
らにクランクや剥離が発生していたのに対し、本発明の
反射板A、B、CおよびDでは何等の変化も認められな
かった。In the control reflector E, some peeling occurred in the protective layer, and in F, further cracking and peeling occurred, whereas in the reflectors A, B, C, and D of the present invention, no changes were observed. Ta.
本発明の反射板は、耐温湿性及び耐熱衝撃性が優れてお
り、長期間にわたって安定して使用できる特長がある。The reflector of the present invention has excellent temperature and humidity resistance and thermal shock resistance, and has the advantage of being able to be used stably over a long period of time.
第1図は本発明の反射板の構成を示す断面図である。
1・・・反射板基体、2・・・鏡面部分、3・・・表面
保護層、3a・・・下層、3b・・・上層。
特許出願人 株式会社 リ コ −ノ
第1図FIG. 1 is a sectional view showing the structure of a reflector of the present invention. DESCRIPTION OF SYMBOLS 1... Reflector base, 2... Mirror surface part, 3... Surface protective layer, 3a... Lower layer, 3b... Upper layer. Patent applicant Reiko Co., Ltd. Figure 1
Claims (1)
の鏡面部分に二酸化珪素の下層と五酸化タンタルの上層
との二層構成または窒化アルミニウムの単層構成の表面
保護層を設けたことを特徴とする反射板。A surface protective layer having a two-layer structure of a lower layer of silicon dioxide and an upper layer of tantalum pentoxide or a single-layer structure of aluminum nitride is provided on the mirror surface portion of a bright aluminum alloy reflector substrate having a predetermined shape. a reflector.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17458190 | 1990-07-03 | ||
JP2-174581 | 1990-07-03 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04174401A true JPH04174401A (en) | 1992-06-22 |
Family
ID=15981060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22104190A Pending JPH04174401A (en) | 1990-07-03 | 1990-08-24 | Reflecter |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04174401A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010130350A (en) * | 2008-11-27 | 2010-06-10 | Brother Ind Ltd | System and device for forming image |
-
1990
- 1990-08-24 JP JP22104190A patent/JPH04174401A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010130350A (en) * | 2008-11-27 | 2010-06-10 | Brother Ind Ltd | System and device for forming image |
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