JPH0417383A - Semiconductor laser device and assembly thereof - Google Patents

Abstract

PURPOSE:To improve workability of a wire bonding wiring of a semiconductor laser device by mutually shifting the opposing sides of the support bodies. CONSTITUTION:A superconductor laser chip 101 is set up on a supporting body (submount 103 and block 105) and a superconductor laser chip 102 is set up no a supporting body (submount 104 and block 106), the submounts 103 and 104 are provided with the projection conductors 107, 108 and the supporting bodies are set up on a base body by solder 109 and 110 so that fellow electrode sides of the semiconductors 101 and 102 may be parallel and opposing to mutually shift the opposing sides 133 and 134. Then, the semiconductor chip 101 is connected to an electrode terminal 119 by means of a wire 127, the part where the side 133 is not opposing to the side 134, a projection conductor 107 and a wire 129, while the semiconductor laser chip 102 is connected to an electrode terminal 118 by means of a wire 128, the part where the side 134 is not opposing to the side 133, the projection conductor 108 and a wire 130.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor laser device comprising a plurality of semiconductor laser chips and a method for assembling the same.

[Conventional technology]

Hitherto, a hybrid semiconductor laser array device as described in Japanese Patent Laid-Open No. 63-237490 and a method for assembling the same as described in Japanese Patent Laid-Open No. 1-241504 have been known.

FIG. 6 shows a schematic diagram of a conventional semiconductor laser device. In the figure, a pair of semiconductor laser chips 1 and 2 are respectively installed on a pair of supports (submount 3 and block 5; submount 4 and block 6). block 5,
6 is installed on the base 9 so that the electrode surfaces of the semiconductor laser chips 1 and 2 are substantially parallel and face each other. From the base 9 are the electrode terminals 12°1 of the semiconductor laser chips 1 and 2.
3 has been taken out. 15 and 16 are electrode terminals 12.1
3 and the substrate 9, 19 and 20 are laser active layers, 21, 22, 23 and 24 are the submount 3,
Partial metallization on 4 surfaces, 25, 26. 27, 28.
29 and 30 are wiring wires. Blocks 5 and 6
The surfaces 31° and 32 face each other face-to-face.

FIG. 7 schematically shows a method for assembling the semiconductor laser device shown in FIG. 6. For simplicity, only the semiconductor laser chip 1 side is depicted, but the same applies to the semiconductor laser chip 2 side. Conventionally, the block 5 is held by a holder 39 (separately from the block 6), and the semiconductor laser chip 1 is driven by the holder 39.
After relatively aligning the semiconductor laser chips 1 and 2 while operating the semiconductor laser chips 9, the block 5 is fixed to the base body 9 with solder 7 (the block 6 side is similarly fixed).

[Problem to be solved by the invention]

In the above prior art, the surfaces 31 and 32 of the blocks 5 and 6 (support bodies) face each other front to side, and the distance between them is narrow.
There was a problem that wiring work could not be done.

Further, during assembly work, when holding and aligning the supports (blocks 5.degree. 6) individually, there was a problem in that the wires 27 and 28, the wires 25 and 30, etc. came into contact and caused a short circuit. If wires 27 and 30 are shortened to prevent contact, 1
During positioning, the operable range of the holder 39 is narrowed, resulting in a problem of poor workability.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor laser device that allows normal wire bonding wiring work to be performed on a support.

Another object of the present invention is to provide a semiconductor laser device that prevents short-circuit contact between wires and has good alignment workability, and a method for assembling the same.

[Means to solve the problem]

In order to achieve the above object, the present invention is such that the opposing surfaces of a pair of supports are shifted from each other.

Moreover, in order to achieve the other object mentioned above, a protruding conductor is provided on the above-mentioned shifted surface, and the holder is brought into contact with the protruding conductor.

[Effect]

According to the present invention, since there is no obstacle (mate support) in front of the shifted surface, normal wire bonding wiring work can be performed between the shifted surface and the electrode terminal.

Further, since current can be supplied to the semiconductor laser chip by bringing the holder into contact with the protruding conductor, there is no need to perform wiring such as the wires 27 and 30 in advance before the alignment step. Therefore, there is no short-circuit contact during the alignment process, and the operable range of the holder is widened.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is an overall perspective view of an embodiment of a semiconductor laser device according to the present invention, and FIG. 2 is an enlarged top view of FIG. 1. In FIGS. 1 and 2, the semiconductor laser chip 101 is installed on a support (submount 103 and block 105), and the semiconductor laser chip 102 is installed on a support (submount 104 and block 106). 125 and 126 are semiconductor laser chips 101 and 102, respectively.
The laser beam is emitted in a direction perpendicular to the paper plane of FIG. The submounts 103 and 104 are provided with protruding conductors 107 and 108 according to the present invention. The support is installed on the base (pedestal 111 and substrate 114) with solders 109 and 110 so that the electrode surfaces of semiconductor laser chips 101 and 102 are parallel and face each other.

Opposing surfaces 133 and 134 of the support are offset relative to each other according to the invention. Holes 115 and 116 in the board 114
is for screw fixation. The photodiode 113 is installed on the convex portion 112 of the pedestal 111. Electrode terminal 11
Reference numeral 7 designates a terminal for the photodiode 113, an electrode terminal 118 for the semiconductor laser chip 102, an electrode terminal 119 for the semiconductor laser chip 101, and an electrode terminal 120 for grounding. The semiconductor laser chip 1.01 is connected to the electrode terminal 119 by a wire 127, a portion where the surface 133 is not opposed to the surface 134, and a protruding conductor 107.degree. wire 129. The semiconductor laser chip 102 has a wire 12
8. A portion where the surface 134 is not opposed to the surface 133;
Protruding conductor 108. Electrode terminal 118 by wire 130
It is connected to the. The light receiving surface of the photodiode 113 (circular part in the figure) is connected to the electrode terminal 11 by a wire 131.
7 is connected. Electrode terminals 117, 118 and 1
19 are hermetically bonded to the substrate 114 through insulating glasses 121, 122, and 132, respectively. The center part where the semiconductor laser chips 101 and 102 are located is a cap 123.
and a window 124 for airtight sealing.

The laser light passes through the window 124 and is emitted.

Active layers 125 and 1 of semiconductor laser chips 101 and 102
The position of 26 is shifted from the chip center position in the vertical direction of the paper of FIG. 2 so that the wires 127 and 128 do not come into contact with the other laser chip. The specifications of the semiconductor laser chips 101 and 102 can be arbitrarily selected, and for example, a low-noise laser with an oscillation wavelength of 670 nm and a high-power laser with an oscillation wavelength of 780 nm are used in combination.

Submounts 103 and 104 have high thermal conductivity/electrical insulation S
It is made of iC ceramics, and its surface is partially metallized for electrical wiring. Protruding conductor 10
7 and 108 are made of Au.

Semiconductor laser chips 101 and 102 and protruding conductors 107 and 108 are mounted on submounts 103 and 104, respectively.
It is fixed by u-Sn solder (melting point 280°C).

The photodiode 113 is provided to detect the optical power of the semiconductor laser chips 101 and 102, and is fixed to the convex portion 112 with Au-8n solder.

In order to prevent reflected light from the photodiode 113 from returning to the semiconductor laser chips 101 and 102, a portion of the convex portion 112 is formed on an inclined surface.

The blocks 105, 106 and the pedestal 111 are made of Cu, and the substrate 114 is made of Fe. These surfaces have A u /
Ni plating has been applied. The shape of the pedestal 111 is
It was processed to match the displacement of surfaces 133 and 134. Block 105. IC) 6 and submount 103, 104
is fixed with Au-3n solder, and the block 105,1
06 and pedestal 111 are Pb-5n solder (melting point 183°C) 1
09°110, and the pedestal 111 and the board 114
was fixed with silver solder.

According to this embodiment, since the surfaces 133 and 134 of the supports are offset from each other, there is no obstacle (the other support) in front of the offset surfaces. Therefore, as shown by the dashed line in FIG. 2, wires 129° 130 are connected from the protruding conductor 107° 108 on the shifted surface to the electrode terminals 119, 118 by using ordinary bonding tools 135 and 136 from the left and right sides of the paper. Can perform wiring work. The surfaces of the electrode terminals 118 and 119 on the tool 135 and 136 side are
Each piece is processed into a flat shape to make it easier to work with.

Next, a method of assembling the semiconductor laser device shown in FIGS. 1 and 2 will be explained. FIG. 3 is a diagram showing an embodiment of the assembly process.

A. Photodiode mounting process (FIG. 3 501) First, the photodiode 113 is fixed to the convex portion 112 of the pedestal 111. Thereafter, the wire 13 is connected from the light receiving surface to the electrode terminal 117.
1 is bonded from the direction perpendicular to the paper surface of the second drawing.

B. Laser chip mounting process (FIG. 3 502) Semiconductor laser chip 101. Protruding conductor 107° submount 103
and fix block 105. Semiconductor laser chip 102. The protruding conductor 108° submount 104 and block 106 are fixed. After fixing, wires 127, 12
Wire 8.

Solder 109 and 110 are applied to blocks 105 and 106 in advance.
Pick it up and solder it.

C0 support holding step (see FIG. 3, 503, and FIGS. 4 and 5) The blocks 105 and 106 are held individually by a holder.

The block 105 side will be explained below using FIG. 4. The block 105 includes holders 200 and 201 and a presser plate 202. According to the present invention, the protruding conductor 10 provided on the submount 103 is held by the leaf spring 204.
7 is in contact with the leaf spring 204. One electrode of the semiconductor laser chip 101 is connected to one wire 127. Submount 1
03 Partial metallization of surface 139. Wire 137. Block 105. It is grounded via the holder 200.

The other electrode is partially metallized 138. on the surface of the submount 103. Projection conductor 1o7. It is connected to a laser drive electrode (not shown) via the leaf spring 204 and the holder 201.

The holders 200, 201 and the presser plate 202 are made of a low thermal expansion super invar alloy. The reason for the low thermal expansion is to prevent the relative positions of the semiconductor laser chips 101 and 102 from shifting due to thermal displacement in the soldering process described later.

The holding plate 202 is provided to prevent the block 105 from tilting. The leaf spring 204 is made of phosphor bronze.

The portions where the holder 201 and the leaf spring 202 contact the block 105 are coated with an insulating coating.

Note that if the polarities of the electrodes of the semiconductor laser chip 101 are different, wiring as shown in FIG. 5 is performed.

One electrode of the semiconductor laser chip 101 is connected to the wire 14
0. The partial metallization 143 of the submount 103 is connected to the laser drive power source through the protruding conductor 107, and the other electrode is connected to the partial metallization 142° wire 141. It is grounded via block 105.

Although the block 105 side has been described above, the block 106 side has a similar structure.

D. Laser alignment step (FIG. 3 504) Semiconductor laser chips 101 and 102 are driven by the electrical wiring path as described in step C above, and blocks 105 and 106 are formed.
position with the holder (200).

201, etc.), the semiconductor laser chips 101 and 102 are aligned relative to each other.

The alignment is performed using near-field images (i.e., light emitting point positions) of the active layers 125 and 126 of the semiconductor laser chips 101 and 102;
and far-field images of semiconductor laser chips 101 and 102 (
That is, the laser beam emission direction) is observed while being observed using a microscope device or the like. A fine movement mechanism (not shown) at the end of the holder is moved/rotated to align the semiconductor laser chips 101 and 102 in a predetermined position and direction.

E. Soldering process (FIG. 3, 505) Solders 109 and 110 are melted to fix blocks 105 and 106 to pedestal 111 while maintaining the relative position between semiconductor laser chips 101 and 102 using a holder.

Since the holders on both sides of blocks 105 and 106 have a symmetrical structure, the thermal displacement when the solder solidifies occurs symmetrically.

Therefore, the thermal displacements of the holders on both sides cancel each other out. Furthermore, since the thermal displacement itself is kept low as described above, the position will not shift during solder solidification. There is no problem even with volumetric contraction of solder 109 and 110 during solidification because the positions of blocks 105 and 106 are sufficiently maintained by the holder.

F. Holder Removal Step After turning off the driving power for the semiconductor laser chips 101 and 102, the holders are removed from the blocks 105 and 106. At this time, the holder is operated so that unnecessary force is not applied to the blocks 105 and 106.

G. Wire wiring process (FIG. 3 507) As described in the explanation of FIG.
19, the wire 130 is connected from the protruding conductor 108 to the electrode terminal 1.
Polding to 18.

H8 hermetic sealing process (FIG. 3 508) The cap 123 with the window 124 is welded to the substrate 114 in an inert gas atmosphere, and the semiconductor laser chips 101 and 10 are
The center part where 2 is located is hermetically sealed.

(2) Completion (FIG. 3 509) Through the above steps, the semiconductor laser device of this example is completed.

According to the embodiment of the assembly method described above, the leaf spring 204
By bringing the protruding conductor 107 into contact with the protruding conductor 107, current can be supplied to the semiconductor laser chip 101 (the same applies to the chip 102 side), and there is no need to wire the wires 129 and 130 before the alignment process. Therefore, the wires do not come into short-circuit contact with each other during the alignment process as in the conventional case, and the operating range of the holder is not narrowed by the wires 129 and 130.

〔Effect of the invention〕

According to the present invention, since the opposing surfaces of the support are shifted from each other, there is an effect that the workability of wire bonding wiring of a semiconductor laser device is improved.

Furthermore, since the semiconductor laser chip can be driven by contact with the protruding conductor during one assembly process, there is no risk of short-circuit contact, and the operating range of the holder is expanded, furthermore, the assembly work is improved.

The effects of the present invention are due to the fact that the facing surfaces of the supports are shifted and the wiring is made by contacting the protruding conductors, and the shape, material, contact method, etc. of the supports and protruding conductors may be changed depending on the case. It is possible to change.

[Brief explanation of the drawing]

FIG. 1 is an overall perspective view of an embodiment of a semiconductor laser device according to the present invention, FIG. 2 is an enlarged top view of FIG. 1, and FIG. 3 is an assembly process showing an embodiment of a method for assembling the semiconductor laser device of the present invention. 4 and 5 are views showing a partial embodiment of the assembly method, FIG. 6 is a top view of a conventional semiconductor laser device, and FIG. 7 is a top view of a conventional semiconductor laser device.
The figure shows a part of a conventional assembly method. 101.102...Semiconductor laser chip, 133°1
34... Surface, 107, 108... Projection conductor, 118
゜119...Electrode terminal, 129,130...Wire, Snake 2nd cause +32 II Doth Snake Diagram

Claims (3)

[Claims] 1. At least a pair of semiconductor laser chips are installed on a pair of supports, and the supports are installed on a base so that the electrode surfaces of the semiconductor laser chips are substantially parallel and face each other, and the semiconductor laser chips are connected to the base from the base. A semiconductor laser device comprising an electrode taken out, characterized in that faces of the pair of supports that face each other are shifted from each other, and wiring is provided between the semiconductor laser chip and the electrode terminal via the shifted faces. Device. 2. 2. A semiconductor laser device according to claim 1, further comprising a protruding conductor provided on said shifted surface. 3. 3. The method for assembling a semiconductor laser device according to claim 2, including the steps of fixing the pair of semiconductor laser chips to the pair of supports, respectively holding the supports individually, and attaching the holder to the protruding conductor. a step of bringing the semiconductor laser chips into contact with each other and supplying current to the semiconductor laser chips; and a step of relatively aligning the semiconductor laser chips while driving the semiconductor laser chips and individually manipulating the supports with the holders. , fixing the support to the base while maintaining the relative position, removing the holder from the support, and running electrical wiring from the protruding conductor to the electrode terminal. A method for assembling a semiconductor laser device, comprising: