JPH04167328A - Manufacture of field emission type element - Google Patents

Abstract

PURPOSE:To obtain elements in a simple process by forming a gate material layer and a resist layer on an insulation layer, and forming an opening hole through the etching of the gate material layer and the insulation layer so as to form an electrode and remove the resist. CONSTITUTION:An insulation layer 2, a gate material layer 3 and a resist layer 4 are formed on a substrate 1, the layer 2 and the layer 3, respectively. The patterning of the layer 4 forms a resist opening 42 having a overhang part 40, and the etching of the layers 3 and 2 forms an opening hole 21, and the vapor-depositing of an electrode material in the opening hole 21 forms an electrode 5. After that, the removing of a resist 41 obtains a field emission type element. The manufacture thus is so easy that, when a field emission type display is manufactured by using the elements for picture elements, the picture elements are each manufactured in a simple process and the surfaces are easily manufactured uniform.

Description

[Detailed description of the invention] [Industrial application field]

The present invention relates to a method of manufacturing a field emission type device. The present invention can be used, for example, as a method for manufacturing an element when manufacturing a field emission type display used as a flat display.

[Summary of the invention]

The method for manufacturing a field emission type device of the present invention includes:
A resist layer is patterned to form a resist opening having an overhang portion, a gate material layer and an insulating layer formed on the substrate are thereby etched to form an opening hole, and an electrode material is formed in the opening hole. , by forming an electrode and removing the resist,
By forming electrodes using overhang-shaped resist and removing unnecessary electrode material by lift-off, it is possible to manufacture devices using a simple process, and when creating a display using the devices as pixels. It is designed so that a good display can be obtained even in the case of a camera.

[Conventional technology]

In recent years, field emission type devices have attracted attention. In this method, the electrode (emitter) that generates electrons is formed, for example, in the shape of a fine cone, and this serves as an electron gun, emitting electrons from its tip to the counter electrode (anode). . Regarding the structure of a conventional device of this kind, for example, a field emission electron gun, see, for example, Japanese Patent Application Laid-Open No. 1-272039.
There is a description in the issue. On the other hand, the development of flat displays has recently made particular progress, and flat panel displays used for such flat displays are attracting attention as so-called wall-mounted televisions. A promising candidate for colorizing such a display is an active type liquid crystal display, and recently, non-active methods using ferroelectric liquid crystals have also been attracting attention. However, the former active type has T P T (Thin fi
It is difficult to form a lmTransistor with a high yield. Among the latter non-active methods, there are EL (electroluminescence) and plasma displays, which require the distance between electrodes to be very narrow and uniform, but these display poor image quality compared to liquid crystal. Although it has high brightness, there were many problems in colorization, such as short lifespan and the fact that blue, which requires excitation with a particularly large potential difference among the three primary colors, does not shine with sufficient brightness.Therefore, the inventor of the present invention focused on a field emission type display that obtains images using the same principle as a small cathode ray tube placed on a flat surface.As mentioned above, in a field emission type device, electrons are emitted from an electrode (subgun). However, if the electrons are configured to make a phosphor (typically a rare earth oxide) glow, images can be obtained using the same principle as a cathode ray tube, and high image quality can be achieved. , and can be easily colored.

[Problems to be solved by the invention]

Although several manufacturing methods have been proposed for field emission type devices, these are not necessarily simple processes. When constructing a display using field emission type elements as pixels, it is desired that the display has good in-plane uniformity. However, since the steps of conventional manufacturing techniques are complicated, it is not easy to improve the in-plane uniformity. For example, conventional manufacturing techniques include those shown in FIGS. 2(A) to 2(C). This is based on the principle that when metal is vacuum-deposited using a pinhole as a mask, the diameter of the pinhole decreases as the thickness of the deposited film increases, and the pinhole eventually closes. The electrode 5 is formed of, for example, MO in the opening hole 21 of the oxide (Ox, etc.). In each figure, 5' is a Mo layer. Also 91 is MoFi
The J film 92 is the A1 layer. The arrows in FIG. 2(B) indicate vapor deposition. Another conventional manufacturing technique is shown in FIGS. 3(A) to 3(C). This is a method that utilizes anisotropic etching of single-crystal Si.
An etching mask (S i O2 or S
iN, etc.) 1' to the desired size (Fig. 3 (
A)) Next, St is processed into the shape shown in FIG. 3 (B) using an etching solution (a mixed solution of KOH, isopropyl alcohol, water, etc.) to form the electrode 5, and finally the insulating film 2 and the lead-out electrode 9 are formed. Attach and complete. Moreover, what is shown in FIGS. 4(A) to 4(E) is
Up to C), the emitter electrode 5 is obtained in the same manner as in the procedure shown in FIG. is determined in a self-aligned manner, so that the gate 93 and anode electrode 94 are not arranged two-dimensionally around the emitter electrode 5, but are arranged three-dimensionally through an insulating layer 2 made of, for example, Sin. This results in a structure (FIG. 4(E)) in which the structure is arranged as shown in FIG. (For other conventional technologies of field emission elements, see
Junichi Ito, “Vacuum Microelectronics J” (164-169) in Applied Physics 3, 59-2 (1990)
page) and “Information Display”
Ivor Brodie'^dva included in 1/89 of the magazine
nced technology: flat co
(Refer to the description of LD-Cathode CRTs). However, all of these conventional techniques involve complicated processes and are not suitable for forming field emission elements as pixels. In particular, because the processes are complicated, in-plane uniformity cannot be achieved. In addition, these conventional techniques form the extraction electrode with the assumption that the electrons from the electrode 5 are received on almost the same plane, and it is suggested that the extraction electrode be used for a display. It's not something you do.

[Purpose of the invention]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems and provide a method for manufacturing a field emission type device, which allows the device to be manufactured through a simple process. In this way, even when configuring a display using the element as a pixel, it is possible to easily make the display uniform within the plane.

[Means to solve the problem]

The method for manufacturing a field emission type device of the present invention includes:
forming an insulating layer on a substrate, forming a gate material layer on the insulating layer, forming a resist layer on the gate material layer, and patterning the resist layer to form a resist opening having an overhang portion. , etching the gate material layer and the insulating layer to form an opening hole, forming an electrode material in the opening hole, thereby forming an electrode, and removing the resist. This configuration solves the above problems. FIG. 1 shows an embodiment of the configuration of the present invention, which will be described in detail later.
The following is an explanation using an example. The method for manufacturing a field emission type device of the present invention includes:
As illustrated in FIGS. 1 (A) to (G), an insulating layer 2 is formed on a substrate 1 (FIG. 1 (A)), and a gate material layer 3 for forming a gate electrode is formed on the insulating layer 2. Figure 1 (
B)), a resist layer 4 is formed on the gate material layer 3 (for example, a negative resist, for example, a resist material that exhibits high absorption at the exposure wavelength. If such a material is used, it will be difficult to form an overhang shape in the next step). Figure 1
(C)), the resist layer 4 is then patterned to form a resist opening 42 having an overhang portion 40 (in FIG. 2 by, for example, wet etching to form an opening 21 (FIG. 1(E)), and an electrode material such as metal is etched into the opening 2.
1 (FIG. 1F)), the resist 41 is removed,
Obtain a field emission type device (Fig. 1 CG)
).

[For use]

According to the present invention, the electrode 5 constituting the electron gun is formed using the resist 41 patterned to have the overhang portion 40, and at this time, the resist 41 is also formed on the resist 41 outside the opening hole 21. Electrode material film 81 (Fig. 1 (
(see F)) is removed simultaneously with the removal of the resist 41,
Since it is removed by so-called lift-off, a field emission type device can be manufactured through a simple process. Because it is easy to manufacture, even when using this element as a pixel to create a field emission display, each pixel can be created through a simple process, making it easy to create uniformity within the plane. It will be done.

【Effect of the invention】

As described above, according to the method for manufacturing a field emission type device of the present invention, the device can be formed through easy steps. Therefore, even when creating a display using field emission type elements as pixels, each pixel can be formed through a simple process, and it is therefore possible to create a display uniformly within the plane to obtain a good display. .

【Example】

Examples of the present invention will be described below. However, it goes without saying that the present invention is not limited to the examples described below. Example 1 In this example, the opening for the electrode and the electrode can be formed at the same time, and the electron gun side can be easily obtained, so that the field emission type device can be manufactured easily. did. That is, normally lift-off masks are formed by oblique vapor deposition, but in this example, by applying the present invention,
By forming a mask for lift-off, it is possible to form the electrode and the opening hole of the electrode at the same time. Refer to each figure in FIG. In this embodiment, an insulating layer 2 such as SiO□ (for example, CVD-3ift or thermal oxidation 5iOz) is formed on a base 1 such as a Si substrate.
A gate material layer 3 (any conductive material such as a metal material or silicide) is formed on top of the gate material layer 3 to form a gate electrode. The structure is shown in Figure 1 (B). HMD the surface of the base 10 on which the gate material layer 3 has been formed
LMRU■ (
(manufactured by Fuji Yakuhin ■) was spin-coated and soft-baked at 30°C for 90 seconds. This resulted in the structure shown in Figure 1(C). This is an i-line reduction projection exposure system, RA-101VL2 (
Made by Hitachi, after exposure with NA: 0.42), 100″
C for 90 seconds, spray development (30 seconds) using a special developer (chlorobenzene as the main component), and rinsing with xylene. As a result, as shown in FIG. 1(D), a resist 41 was obtained on the substrate 1, which was patterned to have a resist opening 42 (contact hole) having a diameter of 1 to 2 μm and having an eave-like overhang portion 40. Since the negative resist used has high absorption for i-line, which is the exposure light, such a reverse tapered shape can be easily obtained. Using the resist 41 patterned in this way,
First, the underlying gate material film 3 was etched, and then the insulating layer 2 was etched. As a result, a structure having open holes 21 as shown in FIG. 1(E) was obtained. The gate material film (gate electrode) after etching is marked 30.
The insulating layer after etching is indicated by 20. These patterning may be done by dry etching or wet etching. Etching may be performed successively all at once. After boiling, electrode material (typically various metals, such as M
o and W) were vapor-deposited using a resistance heating vapor deposition machine. For these vapor depositions, an EB heating vapor deposition machine may be used. By forming such an electrode material, a structure in which the electrode 5 was formed inside the opening hole 21 was obtained, as shown in FIG. 1(F). The conical shape of the electrode 5 is determined by the deposition conditions. At this time, a film 81 made of an electrode material is simultaneously formed on the resist 41. The vapor deposition at this time may be performed by means with poor step coverage. Next, the resist 41 is removed and lift-off is performed. That is, the resist 41 is removed using acetone and DMF (dimethylformamide), and the resist 41 is removed at the same time.
The upper electrode material film 81 was removed and lifted off. As a result, a structure having an electrode 5 serving as a lower electron gun was formed as shown in FIG. 1(G). Thereafter, a phosphor element is attached above (in the direction toward which the tip of the electron gun faces) and a vacuum is applied to produce a display. For example, as schematically shown in FIG.
It can be formed above the electrode 5 so that the electrons from the electrode 5 cause it to emit fluorescence. FIG. 5 schematically shows only one element. In FIG. 5, 5 is a cone-shaped electrode (emitter), which corresponds to an electron gun. 30 is a gate electrode. Reference numeral 10 indicates a face plate of the display, which is made of glass. A phosphor 11 emits light upon receiving energy from the tip of the emitter electrode 5. A color display can be produced by appropriately selecting a phosphor to make this light emission a color light emission. Reference numeral 12 denotes a collector electrode, which can be made of a transparent conductive film, for example, ITO (indium-tin oxide). 13 is a vacuum chamber in which each of the above parts is housed; for example, 10
Create a vacuum of about -6 to 10 Torr. In the structure shown in FIG. 5, emitter electrodes 5 and the like of micron order are formed by the method described above, and a face plate 10 whose surface is coated with phosphor 11 is arranged to face them. This can be obtained by forming the collector electrode 12 (anode) with a transparent electrode such as. Since this structure constitutes a type of vacuum tube, the inside of the tube is evacuated and the vacuum chamber 13 is maintained under vacuum. For example, the container can be sealed with a glass lid and evacuated to maintain the degree of vacuum. In order to stabilize the emission, a plurality of chips may be used as one minute light source. In the above embodiments, other resists that provide an overhang shape may be used for lift-off. For example, 5AL-
601ER7 (manufactured by Silapray) or the like may be used. When using this resist, a KrF excimer laser stepper, N5R1505EX (NA: 0.4
2) etc. to form a pattern, and heat it at 120°C for 60°C.
After second PEB (post-exposure beta), MF, a special developer,
622 for 5 minutes, a resist pattern having an overhang portion can be created. However, lift-off is limited to HMPA (hexamethylphosphorintriamide), NMP (N-methylpyrrolidone), DMSo (
It is appropriate to use more polar solvents, such as dimethyl sulfoxide). A phenolic resist stripping solution may also be used. According to this embodiment, a resist layer 4 is obtained by applying a negative resist having high absorption at the exposure wavelength onto a substrate on which an insulating layer 2 and a gate material layer 3 are formed in this order, and a resist opening 42 is formed. After patterning, an opening hole 21 is formed by etching, leaving the necessary insulating layer 20 and gate portion 30, and then the metal for the electrode is deposited, especially here by a method with poor step coverage, and then lift-off is performed. Since the field emitting type device was manufactured by obtaining the electrode 5 using a pattern using a high absorption negative type resist having an overhang shape, and by performing the etching and lift-off processes at the same time,
The device can be obtained through a simple process. Therefore, even if this method is applied to fabricating the electron gun part of a field emission type display, the manufacturing process is easy and it is easy to achieve good in-plane uniformity, so it can be used to fabricate a good display. .

[Brief explanation of drawings]

FIG. 1 is a diagram showing the steps of Example-1 in order.

FIG. 2 shows the prior art.

FIG. 3 shows the prior art.

FIG. 4 shows the prior art.

FIG. 5 is a schematic diagram of a configuration when Example-1 is applied to a display.

[Explanation of symbols]

1 Base 2 Insulating layer 3 Gate material layer 4 Resist layer 5 Electrode 40 Overhang part 42 Resist opening 21 Opening hole

Claims (1)

[Claims] 1. Forming an insulating layer on a substrate, forming a gate material layer on the insulating layer, forming a resist layer on the gate material layer, and patterning the resist layer to have an overhang portion. A field comprising: forming a resist opening; etching a gate material layer and an insulating layer to form an opening; forming an electrode material within the opening, thereby forming an electrode; and removing the resist. A method of manufacturing an emission type element.