JPH04159745A - Measurement apparatus for microdimension of wafer - Google Patents
Measurement apparatus for microdimension of waferInfo
- Publication number
- JPH04159745A JPH04159745A JP2284932A JP28493290A JPH04159745A JP H04159745 A JPH04159745 A JP H04159745A JP 2284932 A JP2284932 A JP 2284932A JP 28493290 A JP28493290 A JP 28493290A JP H04159745 A JPH04159745 A JP H04159745A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- stage
- measurement
- calibration mark
- value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005259 measurement Methods 0.000 title claims abstract description 17
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 238000012937 correction Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract 8
- 230000003287 optical effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Length Measuring Devices By Optical Means (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はウェーハの微小寸法測定装置に関し、特に光学
方式による半導体ウェーハの微小寸法測定装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a wafer minute dimension measuring device, and more particularly to a semiconductor wafer minute dimension measuring device using an optical method.
従来、光学方式によるウェーハの微小寸法測定は、第３
図に示すように光学顕微鏡を′Ｆ■カメラで取り込み、
デジタル処理を行って寸法を算出する光学顕微鏡方式と
、第４図に示すようにレーザをパターン−Ｌで走査させ
て寸法を出ずレー→ノ゛走査方式があった。光学顕微鏡
方式の光源はハロゲンランプ、レーザ走査方式グ）光源
はＨｅ−Ｎｅレーザ、Ｈ’ｅ−Ｃｄレーザ、 Ａ ｒレ
ーザ等が使用されている。Conventionally, wafer minute dimension measurement using optical methods has been
As shown in the figure, capture the optical microscope with the 'F■ camera.
There is an optical microscope method in which dimensions are calculated by digital processing, and a laser scanning method in which dimensions are not calculated by scanning a laser in a pattern L as shown in FIG. The light source used in the optical microscope system is a halogen lamp, and the light source used in the laser scanning system is a He-Ne laser, H'e-Cd laser, Ar laser, etc.
光学系での微小寸法測定範囲は、およそ０．８μｍ以上
程度であり、その繰返し精度は００５ノｔ ｍ （３σ
）程度である。The measurement range of minute dimensions with the optical system is about 0.8 μm or more, and its repeatability is 0.05 not m (3σ
).
従来は光源の経時的劣化により測定寸法が変化し７．０
．１μｍ程度のばらつきがあった。その為、定期的に構
成治具やザンプルを用いて構成を行っていた。In the past, the measured dimensions changed due to the deterioration of the light source over time.
．． There was a variation of about 1 μm. Therefore, configuration was performed regularly using configuration jigs and samples.
ｒ、発明か解決しようとする課題〕
この従来のウェーハの微小−ｑ法装置では、光源の経時
的劣化の影響や光源の製造ロッＩ・の違いによる劣化速
度の違い及び照度のゆらぎ等の為、定期的に装置の校正
を行わないと、半導体装置の微小寸法を管理するに足り
る精度が得られながった。r, Invention or problem to be solved] In this conventional wafer micro-q method device, due to the influence of deterioration of the light source over time, the difference in deterioration rate due to the difference in the manufacturing lot of the light source, and fluctuations in illuminance, etc. However, unless the equipment is calibrated regularly, it is not possible to obtain sufficient accuracy to manage the minute dimensions of semiconductor devices.
また、その間の変化には追従できないし、校正中に装置
を使用出来ないといっな問題点があった。Further, there are problems in that it is not possible to follow changes during that time, and the device cannot be used during calibration.
本発明の微小寸法測定装置は、ウェーハステージに載置
された被測定用のウェーハに光線束を照射してその画像
を検出して演算処理部により計測してウェーハ表面の微
小寸法を測定するウェーハの微小寸法測定装置において
、前記ウェーハステージに設けられた前記ウェーハと同
じ高さの校正用マークと、該構成用マークの測定結果を
前記ウェーハの測定結果に加算する加算手段を前記演算
処理部に設けて構成されている。The micro-dimension measurement device of the present invention irradiates a wafer to be measured placed on a wafer stage with a beam of light, detects the image, and measures the micro-dimensions of the wafer surface using an arithmetic processing unit. In the micro-dimensional measuring device, the arithmetic processing unit includes a calibration mark provided on the wafer stage and having the same height as the wafer, and an addition means for adding the measurement result of the configuration mark to the measurement result of the wafer. It is set up and configured.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の模式図て、光学顕微鏡
方式について示す。本実施例は、顕微鏡像をカメラ１１
０て取り込み、画像処理部１１］でデジタル処理され線
幅の値を測定する。FIG. 1 is a schematic diagram of a first embodiment of the present invention, and shows an optical microscope system. In this embodiment, the camera 11
0, digitally processed by the image processing unit 11], and the line width value is measured.
次に補正方法について述べる。Next, the correction method will be described.
まず最初に＞Ｃ−Ｙ軸つェーハステージ１０２の表面に
設けたウェーハ１０４と同じ高さの構成用マーク１０１
の測定を行う。構成用マークの絶対値をり、この時の測
定値をＬ′とした時、この差△Ｌ（＝Ｌ−Ｌ′）を補正
値とする。次にステージ１０２が矢印の方向に移動し、
ウェーハ１０４−トの線幅を測定する。ここで得られた
値がｔ、 ｗのとき自動的にΔ■−を加算し、Ｌ、ｖ−
１−ΔＬを真の値として得ることができる。First, a configuration mark 101 at the same height as the wafer 104 provided on the surface of the >C-Y axis wafer stage 102.
Perform measurements. When the absolute value of the constituent mark is calculated and the measured value at this time is L', this difference ΔL (=L-L') is taken as the correction value. Next, the stage 102 moves in the direction of the arrow,
Measure the line width of the wafer 104-t. When the values obtained here are t, w, Δ■- is automatically added and L, v-
1-ΔL can be obtained as the true value.
また、第２図は本発明の第２の実施例の模式図で、レー
ザ走査方式について示す。本実施例はレーザスボッ１〜
ビームを線幅上で走査させ、その反射光を検出して値を
出ず方法である。Further, FIG. 2 is a schematic diagram of a second embodiment of the present invention, and shows a laser scanning method. In this example, the laser robot 1~
This method scans a beam over the line width and detects the reflected light to produce a value.
以上説明したように本発明は、校正用マークをウェーハ
ステージ上に設けて、ウェーハ毎に補正値を求める事で
常に安定した測定値を得る事が出来るという効果を有す
る。As explained above, the present invention has the advantage that stable measurement values can always be obtained by providing calibration marks on the wafer stage and determining correction values for each wafer.
第１図は本発明の第１の実施例の模式図、第２図は本発
明の第２の実施例の模式図、第３図、第４図はそれぞれ
従来のウェーハの微小寸法測定装置の模式図である。
］・・・校正用マーク、２・・・Ｘ−Ｙ軸つェーハステ
ージ、３・・・Ｚ軸つェーハステージ、４・・・ウェー
ハ、１０５・・・＃２レンズ、］０６・・・＃２ミラー
、１０７・・・＃１ミラー、１０８・・・＃ルンズ、］
０９・・・ハロゲンランプ、１１０・・・カメラ、１１
１・・・画像処理部、１１２・・・メモリ、１１３・・
・システムコンピュータ、２０５・・・散乱光集光ミラ
ー、２０６・・・＃ルンズ、２０７・・・＃３ミラー、
２０８・・・＃４ミラー、２０９・・・＃５ミラー、２
１０・・・＃１ミラー、２１１・・・＃２ミラー、２１
２・・・＃２レンズ、２］３・・・レーザ光源、２１４
・・・駆動部、２］５・・・ディテクタ、２］−６・・
・マルチプレクサ、２１７・・・Ａ−Ｄ変換器、２］８
・・・コンピュータ。FIG. 1 is a schematic diagram of a first embodiment of the present invention, FIG. 2 is a schematic diagram of a second embodiment of the present invention, and FIGS. It is a schematic diagram. ]...Calibration mark, 2...X-Y axis wafer stage, 3...Z-axis wafer stage, 4...wafer, 105...#2 lens, ]06...# 2 Mirror, 107...#1 Mirror, 108...#Luns,]
09...Halogen lamp, 110...Camera, 11
1... Image processing section, 112... Memory, 113...
- System computer, 205...Scattered light condensing mirror, 206...#Luns, 207...#3 mirror,
208...#4 mirror, 209...#5 mirror, 2
10...#1 mirror, 211...#2 mirror, 21
2... #2 lens, 2] 3... Laser light source, 214
...Driver, 2]5...Detector, 2]-6...
・Multiplexer, 217...A-D converter, 2]8
···Computer.
Claims (1)
線束を照射してその画像を検出して演算処理部により計
測してウェーハ表面の微小寸法を測定するウェーハの微
小寸法測定装置において、前記ウェーハステージに設け
られた前記ウェーハと同じ高さの校正用マークと、該構
成用マークの測定結果を前記ウェーハの測定結果に加算
する加算手段を前記演算処理部に設けたことを特徴とす
るウェーハの微小信号測定回路。In a wafer micro-dimension measuring device that measures the micro-dimensions of the wafer surface by irradiating a wafer to be measured placed on a wafer stage with a beam of light, detecting the image, and measuring the image by a processing unit, the wafer A wafer characterized in that the arithmetic processing unit is provided with a calibration mark provided on a stage and having the same height as the wafer, and an addition means for adding the measurement results of the configuration mark to the measurement results of the wafer. Small signal measurement circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2284932A JPH04159745A (en) | 1990-10-23 | 1990-10-23 | Measurement apparatus for microdimension of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2284932A JPH04159745A (en) | 1990-10-23 | 1990-10-23 | Measurement apparatus for microdimension of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04159745A true JPH04159745A (en) | 1992-06-02 |
Family
ID=17684928
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2284932A Pending JPH04159745A (en) | 1990-10-23 | 1990-10-23 | Measurement apparatus for microdimension of wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04159745A (en) |
-
1990
- 1990-10-23 JP JP2284932A patent/JPH04159745A/en active Pending
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