JPH04152523A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To make it possible to completely remove remaining substance on a process chemical agent substrate by a method wherein, when a substrate is washed in a water-washing tank with pure water after a substrate has been processed with chemical agent, a separation wall plate is arranged, at least, on one side of the substrate at intervals so that washing is performed, with the pure water flowing only near the surface of the substrate. CONSTITUTION:When a substrate 1 is washed with pure water 3 in a water- washing tank 6 after the substrate 1 has been processed with a chemical agent, a separation wall plate 2 is arranged, at least, on one side of the substrate 1 at an interval so that washing is performed, with the pure water 3 flowing only near the surface of the substrate 1. For example, a rectangular washing tank 6 is used in the same way as conventional one in which one reticle substrate 1 is set on a substrate holder 4, a separation wall plate 2 is arranged on the both sides of the substrate 1 at intervals of 3-10mm so that water flows only on the surface of the substrate to flow away the remaining chemical agent at the time of the wet etching. Moreover, a honeycomb-shaped or porous overflow plate 5 is provided on the upper side of the substrate so that the pure water 3 overflows smoothly from the water-washing tank 6.

Description

[Detailed Description of the Invention] [Summary] The present invention relates to a method for cleaning substrates such as reticles, masks, wafers, etc. with pure water after wet etching with chemicals.

When cleaning the substrate with pure water in a washing tank after chemically treating the substrate with the aim of completely removing the residue of processing chemicals on the substrate, a partition plate is placed on at least one side of the substrate at two intervals. The pure water is configured to flow only near the surface of the substrate for cleaning.

[Industrial application field]

The present invention relates to a method for cleaning substrates such as reticles, masks, wafers, etc. with pure water after wet etching by chemical treatment.

In recent years, as VLSI devices have become highly integrated and ultra-fine, there has been a demand for higher quality reticles, masks, and wafers.

For this reason, hot water is purified by rinsing with water after chemical treatment.

Although methods such as increasing the flow rate have been provided, chemical residues adhering to the surfaces of reticles, masks, and wafers cannot be completely removed, and a cleaning method that efficiently removes these chemical residues is required. .

[Conventional technology]

FIG. 3 is an explanatory diagram of a conventional example.

In the figure, 8 is a washing tank, 9 is pure water, 10 is a substrate holder, and 11 is a substrate.

Conventional wet cleaning after chemical processing of reticles, masks, and wafers involves heating pure water and increasing the flow rate during rinsing, but this leaves chemical stains on the substrate and causes chemical residue. Things were not completely removed.

That is, the conventional cleaning method is as shown in FIG.

Three to five washing tanks 8 are prepared, and pure water heated to 50 to 90° C. is flowed into them at a rate of 10 to 301/win.

A plurality of substrates 11 placed on a substrate holder 10 were immersed in the overflowing water washing tank 8 for 3 to 10 minutes, and this was repeated 3 to 5 times by changing the water washing tank 8 to perform water washing.

[Problems to be Solved by the Invention] However, with this method, chemical residue cannot be removed even if reticles, masks, wafers, etc. are wet-cleaned, resulting in a problem that the quality of reticles, masks, wafers, etc. is degraded. was causing

In view of two or more points, the present invention aims to provide a method for completely removing chemical residues during wet cleaning.

[Means to solve the problem]

FIG. 1 is a diagram explaining the principle of the present invention.

In the figure, 1 is a substrate, 2 is a partition plate, and 3 is pure water.

The problem described above is that the flow of rinsing water for substrates such as reticles, masks, and wafers after chemical treatment can be efficiently controlled.
This problem is solved by providing a partition plate in contact with the surface of the mask wafer.

That is, one object of the present invention is as shown in FIG.

After the substrate 1 has been treated with chemicals, the substrate 1 is washed with pure water 3 in a washing tank.

The partition plates 2 are arranged at least one interval apart from each other on at least the machined surface of the substrate 1.

This is achieved by cleaning the substrate 1 by allowing the pure water 3 to flow only near the surface of the substrate 1.

[Effect]

In this manner, in the present invention, as shown in FIG. 1, fresh pure water is repeatedly and efficiently applied continuously to the surface of a substrate such as a reticle, mask, wafer, etc., so that chemical residues can be completely removed.

〔Example〕

FIG. 2 is an explanatory diagram of one embodiment of the present invention.

In the figure, 1 is a substrate, 2 is a partition plate, and 3 is pure water.

4 is a substrate holder, 5 is an overflow plate, 6 is a washing tank,
7 is a pure water introduction pipe.

Fig. 2(a) is a sectional view of the water washing device used in the present invention, Fig. 2(b) is a sectional view taken along the line A-A', and Fig. 2(c) is a cross-sectional view of the water washing device used in the present invention. A partial view is shown.

The washing tank 6 uses a square tank as in the past, and is shown in Fig. 2 (a).
) and (b), in this.

Set one reticle substrate 1 on the substrate holder 4,
A gap of 3 to 10 mm is left on both sides of the substrate 1 so that the water stream can efficiently flow only on the surface of the substrate to wash away chemical residue during chrome etching.

A partition plate 2 is provided.

Moreover, the honeycomb shape is formed so that the pure water 3 smoothly overflows from the washing tank 6 above the substrate 1.

Alternatively, a porous overflow plate shown in a partial view in FIG. 2(C) may be provided.

As an example of cleaning, a method of washing with water after etching a reticle substrate l coated with chromium by vapor deposition will be described.

The chromium-chromium oxide bilayer film deposited on the surface of the reticle substrate l to a thickness of about 1,000 yen is patterned and etched for 30 seconds using ceric ammonium nitrate solution, and the photoresist is removed using a resist stripping solution. After that, the substrate is set in the substrate holder 4 provided at the bottom of the pure water washing tank 6 of the present invention.

Then, pour 10j of pure water 3 heated to 50°C into the washing tank 6.
! /min from the pure water introduction pipe 7, and the surface of the substrate 1 is washed with pure water for 30 minutes.

The pure water 3 used for cleaning flows out from the holes in the overflow plate 5, overflows from the outer edge of the washing tank 6, and is discharged.

The surface of the substrate 1 is covered with pure water 3 that flows in one after another.

Chemical residue on the surface is completely cleaned and removed.

This method reduces cleaning time by half compared to conventional methods.

Furthermore, it was possible to completely eliminate stains such as cleaning stains on the substrate surface due to chemical residues.

〔Effect of the invention〕

As explained above, if the method of the present invention, in which a partition plate is provided in the washing tank and a large amount of pure water is flowed only over the substrate surface, there will be no chemical residue.

This greatly contributes to improving board quality and ensuring reliability.

[Brief explanation of the drawing]

FIG. 1 is a diagram explaining the principle of the present invention. FIG. 2 is an explanatory diagram of one embodiment of the present invention. Figure 3 is an explanatory diagram of the conventional example. It is. In the figure 1 is the board. 3 is pure water. 5 is the overflow plate 6 is a washing tank. 2 is the bulkhead plate. 4 is a board holder. 7 is pure water introduction pipe No. figure No. figure No. figure

Claims (1)

[Claims] After treating the substrate (1) with chemicals, when cleaning the substrate (1) with pure water (3) in a washing tank, at least one surface of the substrate (1) is provided with an interval. A method for manufacturing a semiconductor device, characterized in that: a partition plate (2) is disposed in a manner such that the pure water (3) flows only near the surface of the substrate (1) for cleaning.