JPH0414492B2 - - Google Patents
Info
- Publication number
- JPH0414492B2 JPH0414492B2 JP59168662A JP16866284A JPH0414492B2 JP H0414492 B2 JPH0414492 B2 JP H0414492B2 JP 59168662 A JP59168662 A JP 59168662A JP 16866284 A JP16866284 A JP 16866284A JP H0414492 B2 JPH0414492 B2 JP H0414492B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- charge
- electron beam
- diamond
- resist film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 24
- 238000010894 electron beam technology Methods 0.000 claims description 22
- 229910003460 diamond Inorganic materials 0.000 claims description 19
- 239000010432 diamond Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000002788 crimping Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical group [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- DMFGNRRURHSENX-UHFFFAOYSA-N beryllium copper Chemical compound [Be].[Cu] DMFGNRRURHSENX-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電子ビーム露光方法に際し、基板に
蓄積される電荷を除去する方法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for removing charges accumulated on a substrate during an electron beam exposure method.
通常、基板に緻密な形状のパターニングを行う
場合には、基板表面にレジスト膜を被着し、その
部分にマスクを用いて光を投射するか、電子ビー
ムで描画する等の手段が用いられる。 Normally, when patterning a substrate into a precise shape, a method such as depositing a resist film on the substrate surface and projecting light onto that portion using a mask or drawing with an electron beam is used.
特に、高解像度のパターニングを必要とする半
導体基板では、その基板上に電子ビーム用のレジ
スト膜を被着し、その上に電子ビームを使用して
描画する方法が採用されるが、この場合にレジス
ト膜面に投射された電子ビームの電荷が、レジス
ト膜面と基板との双方に蓄積されるために、基板
表面の電位が変動することになり、その電位が電
子ビーム投射装置の偏向電極の電圧にまで影響を
与えて、電子ビーム走査が円滑に行われず、結果
的にパターニングが不十分になるという不具合が
ある。 In particular, for semiconductor substrates that require high-resolution patterning, a method is adopted in which a resist film for electron beams is deposited on the substrate, and then an electron beam is used to write on the resist film. Since the charge of the electron beam projected onto the resist film surface is accumulated on both the resist film surface and the substrate, the potential on the substrate surface fluctuates, and this potential is applied to the deflection electrode of the electron beam projection device. There is a problem that even the voltage is affected, and electron beam scanning cannot be performed smoothly, resulting in insufficient patterning.
そのために、電子ビームによるレジスト膜面に
蓄積される電荷を除去するための、電荷導電片が
使用されているが、従来これの寿命が短いという
欠点がある。 To this end, a charge conductive piece is used to remove the charge accumulated on the resist film surface due to the electron beam, but this conventionally has the disadvantage of having a short lifespan.
第２図は、半導体装置の製造工程における、レ
ジスト膜を被着した基板を電子ビーム露光法によ
り露光をする状態の模式断面図である。
FIG. 2 is a schematic cross-sectional view of a state in which a substrate coated with a resist film is exposed by an electron beam exposure method in the manufacturing process of a semiconductor device.
基板１があり、その上に酸化膜等の固い絶縁膜
２があつて、その絶縁膜２に所定のパターニング
を行うため、絶縁膜２の表面に電子ビーム用のレ
ジスト膜３を被着し、その表面を電子ビーム投射
装置４によつて、矢印のような電子ビームを投射
して、レジスト膜３を直接描画して露光する。 There is a substrate 1, on which is a hard insulating film 2 such as an oxide film, and in order to pattern the insulating film 2 in a predetermined manner, a resist film 3 for electron beams is deposited on the surface of the insulating film 2. An electron beam as shown by the arrow is projected onto the surface by an electron beam projection device 4 to directly write and expose the resist film 3.
電子ビーム投射装置４は、ビームの口径が
0.1μm×0.1μmから5μm×5μmの大きさに至るま
で大きさは広範囲に選択ができる。 The electron beam projection device 4 has a beam diameter of
The size can be selected from a wide range from 0.1 μm x 0.1 μm to 5 μm x 5 μm.
電子ビームの加速電圧は数10KV、電流密度は
数10A／cm2程度であるが、一方電子ビームを偏向
させる偏向電極電圧は精々数10ボルトであるため
に、基板上のレジスト膜に電荷が蓄積されて、そ
の部分の電位が上昇又は下降すると（レジスト膜
の電子が衝突された際の二次電子の放出により電
位は負又は正になる）、その電位が偏向電極の電
位に影響を与えて電子ビームの軌道が曲げられる
ために円滑な走査が不可能になる。 The accelerating voltage of the electron beam is several tens of KV and the current density is about several tens of A/ cm2 , but the deflection electrode voltage that deflects the electron beam is at most several tens of volts, so charges accumulate in the resist film on the substrate. When the potential of that part increases or decreases (the potential becomes negative or positive due to the emission of secondary electrons when the resist film is bombarded with electrons), that potential affects the potential of the deflection electrode. The trajectory of the electron beam is bent, making smooth scanning impossible.
このような理由から、レジスト膜と基板とに蓄
積された電荷を放出させる方法として、導電性の
ブロツクを用いて、レジスト膜を被着した基板に
圧着することにより、レジスト膜の蓄積電荷を除
去しているが、例えばシリコン基板上に多数の絶
縁膜が形成されていて、然もこれらの絶縁膜が厚
く且つ破壊強度が高いと、電荷導電片をかなり強
く圧着しても、蓄積電荷の除去は非常に困難にな
る。 For this reason, as a method to release the charges accumulated in the resist film and the substrate, the accumulated charges in the resist film are removed by using a conductive block and press-fitting it to the substrate on which the resist film is attached. However, for example, if a large number of insulating films are formed on a silicon substrate, and these insulating films are thick and have high breaking strength, even if a charge conductive piece is pressed very strongly, the accumulated charge cannot be removed. becomes very difficult.
従つて、レジスト膜の蓄積電荷を除去する方法
として、シリコン基板の周辺部の端部５には凹凸
が存在し、基板の表面又は裏面に比較して絶縁膜
の破壊が容易であるために、シリコン基板の周辺
部の端部５に電荷導電片６をバネ７により圧力を
80グラム程度で圧着して蓄積電荷を接地８により
除去する方法が行われている。 Therefore, as a method for removing the accumulated charges in the resist film, since there are irregularities at the peripheral edge 5 of the silicon substrate and the insulating film is more easily destroyed than on the front or back surface of the substrate, A charge conductive piece 6 is applied with pressure by a spring 7 to the peripheral edge 5 of the silicon substrate.
A method of crimping with about 80 grams and removing the accumulated charge by grounding 8 is used.
第３図は従来の電荷導電片６の斜視図であり、
材質はベリリウム−銅（BeCu）合金であつて、
形状が平型の先端部９を有し、先端部の幅が５
mm、厚さ５mmの金属であるが、これを基板１の周
辺部にバネで圧着されるが、電荷導電片が固い基
板に圧着されているために、僅かに数回の使用回
数で、電荷導電片６の先端部分９が破損するとい
う欠点があつた。 FIG. 3 is a perspective view of a conventional charge conductive piece 6.
The material is beryllium-copper (BeCu) alloy.
The tip has a flat tip 9, and the width of the tip is 5.
This metal is 5 mm thick and is crimped to the periphery of the board 1 with a spring, but since the charge conductive piece is crimped to the hard board, the charge can be removed after just a few uses. There was a drawback that the tip portion 9 of the conductive piece 6 was damaged.
上記の構成の電荷導電片ては、電荷導電片の材
質がベリリウム、銅合金であり、比較的脆弱な材
料であることが問題点であるので、これを改良す
る方法として硬度が高く、且つ導電性の優れた材
料の電荷導電片を製作することにある。
The problem with the charge conductive piece having the above structure is that the material of the charge conductive piece is beryllium or a copper alloy, which is a relatively brittle material. The objective is to manufacture a charge conductive piece made of material with excellent properties.
本発明は上記問題点を解消した電子ビーム用の
レジスト膜と基板に蓄積した電荷を除去するため
の電荷導電片を提供するもので、その手段は、レ
ジスト膜で被膜された基板を電子ビームで露光す
る際に、該基板の端面部にイオン注入をしたダイ
ヤモンドでなる電荷導電片を圧着して、該基板上
に蓄積された電荷を除去することを特徴とする電
子ビームの露光方法によつて達成できる。
The present invention provides a resist film for electron beams that solves the above-mentioned problems, and a charge conductive piece for removing the charges accumulated on the substrate. By an electron beam exposure method characterized in that, during exposure, a charge conductive piece made of ion-implanted diamond is crimped onto the end face of the substrate to remove the charge accumulated on the substrate. It can be achieved.
本発明は、極めて硬度の高い単結晶のダイヤモ
ンドにイオン注入することにより、その部分の単
結晶のダイヤモンドをアモルフアス化することに
より、ダイヤモンドに導電性を与えることによ
り、高い硬度で且つ導電性を有する電荷導電片を
提供するものである。
The present invention achieves high hardness and conductivity by implanting ions into extremely hard single-crystal diamond, making the single-crystal diamond in that part amorphous, and giving conductivity to the diamond. A charge conductive piece is provided.
第１図に、本発明の電荷除去片の実施例を斜視
図で示したものである。
FIG. 1 shows a perspective view of an embodiment of the charge removal piece of the present invention.
最も硬度が大きい材料としてダイヤモンドがあ
げられるが、周知のようにダイヤモンドは単結晶
で電気的に絶縁体であり、従つて、このダイヤモ
ンド材料に導電性を付与することができれば、電
荷導電片として使用することができるわけで、そ
のためには結晶構造が整然としている単結晶ダイ
ヤモンド構造を、アモルフアス化することにより
電気伝導性を付与することが可能になる。 Diamond is cited as the material with the greatest hardness, but as is well known, diamond is a single crystal and is an electrical insulator. Therefore, if it is possible to impart conductivity to this diamond material, it can be used as a charge-conducting piece. To achieve this, it becomes possible to impart electrical conductivity to a single crystal diamond structure, which has an ordered crystal structure, by making it amorphous.
ダイヤモンドをアモルフアス化するために、ダ
イヤモンドにイオン注入方法で不純物を注入する
ことができ、この際の注入材料は、イオン化する
殆んどの物質が使用可能であつて、例えば、ボロ
ン(B)、燐（Ｐ）、アルゴン（Ar）、窒素（Ｎ）等
を使用することができる。 In order to make diamond amorphous, impurities can be implanted into the diamond using an ion implantation method. In this case, the implantation material can be almost any substance that ionizes, such as boron (B), phosphorus, etc. (P), argon (Ar), nitrogen (N), etc. can be used.
ダイヤモンドで電荷除去片を製作する方法とし
ては、金属ブロツク２１の先端部に、ダイヤモン
ド２２を使用するものとし、金属ブロツク２１と
ダイヤモンド２２との接続部２３は銀蝋によつて
接続するものとする。 As for the method of manufacturing the charge removal piece using diamond, the diamond 22 is used at the tip of the metal block 21, and the connection part 23 between the metal block 21 and the diamond 22 is connected with silver wax. .
イオン注入して使用されるダイヤモンドは、先
端部２４の角度θは120〜130度であり、ダイヤモ
ンドの結晶方位は〔100〕又は〔111〕の何れかを
選び、イオン注入は150KVの注入電圧で、ドー
ズ量を１×1016程度にする。 The angle θ of the tip 24 of the diamond used by ion implantation is 120 to 130 degrees, the crystal orientation of the diamond is either [100] or [111], and the ion implantation is performed at an injection voltage of 150 KV. , set the dose to about 1×10 16 .
この結果、最初無限大の抵抗であるダイヤモン
ドは、イオン注入がなされてアモルフアス化され
ることにより、電気抵抗が10KΩ程度の電気導電
性が付与される。 As a result, diamond, which initially has an infinite resistance, is ion-implanted and becomes amorphous, giving it electrical conductivity with an electrical resistance of about 10KΩ.
本発明によるダイヤモンドの電荷除去片を、基
板が酸化シリコン膜、又は窒化シリコン膜等で被
覆された基板に使用し、圧着の圧力が50〜100グ
ラム重にして、実際に使用した実績では、数千回
の使用が可能であり、高い耐久性を有することが
確認された。 In actual use, the diamond charge removal piece according to the present invention is used on a substrate coated with a silicon oxide film or a silicon nitride film, etc., and the pressure of crimping is 50 to 100 grams. It was confirmed that it can be used 1,000 times and has high durability.
以上、詳細に説明したように本発明の、電子ビ
ーム露光に使用される電荷除去片は、著しく耐久
性があり、経済効果があると共に、製造工程にお
ける電荷除去片の交換作業等の効率化を高め効果
大なるものがある。
As described above in detail, the charge removal piece of the present invention used for electron beam exposure is extremely durable and has economical effects, and it also improves the efficiency of the work of replacing the charge removal piece in the manufacturing process. There are some things that are very effective.
第１図は、本発明の電荷除去片の実施例を示す
斜視図、第２図は、レジスト膜を被着した基板の
電子ビーム露光の模式断面図、第３図は、従来の
電荷導電片の斜視図、
図において、２１は金属ブロツク、２２は先端
部のダイヤモンド、２３は接続部、２４は先端部
である。
FIG. 1 is a perspective view showing an embodiment of the charge removing piece of the present invention, FIG. 2 is a schematic cross-sectional view of a substrate coated with a resist film exposed to an electron beam, and FIG. 3 is a conventional charge conductive piece. In the figure, 21 is a metal block, 22 is a diamond at the tip, 23 is a connecting portion, and 24 is a tip.
Claims (1)
露光する際に、該基板の端面部にイオン注入をし
たダイヤモンドでなる電荷導電片を圧着して、該
基板上に蓄積された電荷を除去することを特徴と
する電子ビーム露光方法。1. When exposing a substrate coated with a resist film to an electron beam, a charge conductive piece made of ion-implanted diamond is pressed onto the end face of the substrate to remove the charge accumulated on the substrate. An electron beam exposure method characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59168662A JPS6146019A (en) | 1984-08-10 | 1984-08-10 | Electron beam exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59168662A JPS6146019A (en) | 1984-08-10 | 1984-08-10 | Electron beam exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6146019A JPS6146019A (en) | 1986-03-06 |
| JPH0414492B2 true JPH0414492B2 (en) | 1992-03-13 |
Family
ID=15872174
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59168662A Granted JPS6146019A (en) | 1984-08-10 | 1984-08-10 | Electron beam exposure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6146019A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004179411A (en) * | 2002-11-27 | 2004-06-24 | Toppan Printing Co Ltd | Membrane mask and method for exposure |
| JP2004179410A (en) * | 2002-11-27 | 2004-06-24 | Toppan Printing Co Ltd | Stencil mask and method for exposure |
| JP2004296146A (en) * | 2003-03-25 | 2004-10-21 | Toshiba Corp | Heater structure and functional device |
-
1984
- 1984-08-10 JP JP59168662A patent/JPS6146019A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6146019A (en) | 1986-03-06 |
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