JPH04143275A - Sputtering system - Google Patents
Sputtering systemInfo
- Publication number
- JPH04143275A JPH04143275A JP26679490A JP26679490A JPH04143275A JP H04143275 A JPH04143275 A JP H04143275A JP 26679490 A JP26679490 A JP 26679490A JP 26679490 A JP26679490 A JP 26679490A JP H04143275 A JPH04143275 A JP H04143275A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- sample
- integrated
- difference
- integrated power
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004544 sputter deposition Methods 0.000 title claims abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 abstract description 2
- 238000005259 measurement Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はスパッタリング装置に間し、特に陰極に高周波
電圧を印加して試料表面に導電物および絶縁物等の薄膜
を形成するスパッタリング装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a sputtering apparatus, and particularly to a sputtering apparatus that applies a high frequency voltage to a cathode to form a thin film of a conductive material, an insulating material, etc. on a sample surface.
従来、この種のスパッタリング装置においては、真空容
器内を油拡散ポンプ、クライオポンプ等で１０−３〜Ｉ
Ｑ−’Ｐａ程度に排気した後に、真空容器内に所定のガ
スを導入し、前記ポンプての排気速度及び前記ガス導入
量を調節して、真空容器内を数Ｐａ〜ＩＱ−２Ｐａ程度
の最適圧力で一定に保持する。Conventionally, in this type of sputtering apparatus, the inside of the vacuum chamber is heated at 10-3 to I by using an oil diffusion pump, cryopump, etc.
After evacuation to about Q-'Pa, a predetermined gas is introduced into the vacuum container, and the pumping speed of the pump and the amount of gas introduced are adjusted to maintain the inside of the vacuum container at an optimum pressure of several Pa to about IQ-2Pa. Maintain constant pressure.
この状態において、高周波電源で高周波電圧を発生させ
、この高周波電力を一定に制御して陰極に印加すると共
に、電源側のインピーダンスを整合器で負荷側のインピ
ーダンスに整合して損失電力を最小に調節してスパッタ
リングを開始する。In this state, a high-frequency power source generates a high-frequency voltage, and this high-frequency power is controlled to be constant and applied to the cathode, and the impedance on the power source side is matched to the impedance on the load side using a matching box to minimize power loss. and start sputtering.
試料表面に形成される薄膜の膜厚は、所定の時間が経過
する迄、このスパッタリングを継続することで制御して
いる。The thickness of the thin film formed on the sample surface is controlled by continuing this sputtering until a predetermined period of time has elapsed.
上述した従来のスパッタリング装置は、負荷側のインピ
ーダンスと高周波電源側のインピーダンスが常に最適な
状態に整合されているという想定の下にスパッタリング
時間を設定している為、放電空間の圧力、残留ガスおよ
び内部槽遺物の形状等によって負荷側インピーダンスが
変化した場合には、前記負荷側インピーダンスが変化し
た時点から高周波電源側のインピーダンスが負荷に対し
て最適状態となる時点までの間においては高周波電力の
損出が大となり、薄膜の形成速度が低下する。この結果
、試料表面に形成される薄膜の膜厚が、適正値より薄く
なるという欠点がある。The conventional sputtering equipment described above sets the sputtering time on the assumption that the impedance on the load side and the impedance on the high frequency power source side are always optimally matched, so the pressure in the discharge space, residual gas and If the load-side impedance changes due to the shape of the internal tank remains, etc., there will be a loss of high-frequency power between the time the load-side impedance changes and the time the high-frequency power supply side impedance reaches the optimum state for the load. As a result, the formation rate of the thin film decreases. As a result, there is a drawback that the thickness of the thin film formed on the sample surface becomes thinner than an appropriate value.
本発明のスパッタリング装置は、所定の試料の表面に形
成される薄膜の材料となるターゲットを表面に備える陰
極と、前記陰極の前面に位置し、前記試料の薄膜形成面
が前記陰極の表面に対向するように試料を保持するホル
ダーと、前記陰極に所定の高周波電圧を印加する高周波
電源と、前記高周波電源より前記陰極に入力される入力
電力および損失電力の各々の積算電力と測定する測定部
と、前記測定部において測定された入力積算電力と損失
積算電力との差を演算する演算部と、前記演算部で算出
された積算電力の差と予め設定された積算電力とを比較
することでスパッタリング時間を制御する制御部とを備
えて構成される。The sputtering apparatus of the present invention includes a cathode having a target on its surface that is a material for a thin film formed on the surface of a predetermined sample, and a cathode located in front of the cathode so that the thin film forming surface of the sample faces the surface of the cathode. a holder for holding a sample so as to hold the sample; a high-frequency power source for applying a predetermined high-frequency voltage to the cathode; and a measuring unit for measuring each integrated power of input power and power loss input from the high-frequency power source to the cathode. , a calculation unit that calculates the difference between the input integrated power and the loss integrated power measured in the measurement unit, and a calculation unit that calculates the difference between the input integrated power and the loss integrated power measured in the measurement unit, and the sputtering by comparing the difference in the integrated power calculated by the calculation unit with a preset integrated power. and a control section that controls time.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１の実施例の要部を示す概略ブロッ
ク図である。第１図に示されるように、本実施例は、真
空排気口１１を有する真空容器１と、試料２が取り付け
られた試料ホルダー３と、ターゲット４が固定されてい
る陰極５と、整合器６と、測定部７と、高周波電源８と
、演算部９と、制御部１０とを備えている。FIG. 1 is a schematic block diagram showing the main parts of a first embodiment of the present invention. As shown in FIG. 1, this embodiment includes a vacuum container 1 having a vacuum exhaust port 11, a sample holder 3 to which a sample 2 is attached, a cathode 5 to which a target 4 is fixed, and a matching box 6. , a measuring section 7 , a high-frequency power source 8 , a calculating section 9 , and a control section 10 .
第１図において、別途用意されている真空ポンプ（図示
せず）により、真空排気口１１を介して真空容器１の内
部が１０−３〜１０−’Ｐａ（パスカル）程度の圧力ま
で排気され、その後、真空容器１の内部に所定のガスが
導入されて、真空容器１内の圧力は数Ｐａ〜１Ｏ−２Ｐ
ａ程度に設定される。In FIG. 1, the inside of the vacuum container 1 is evacuated to a pressure of about 10-3 to 10-'Pa (Pascal) through a vacuum exhaust port 11 by a separately prepared vacuum pump (not shown). After that, a predetermined gas is introduced into the vacuum container 1, and the pressure inside the vacuum container 1 ranges from several Pa to 1O-2P.
It is set to about a.
この状態において、高周波電源８において発生された高
周波電圧は、測定部７及び整合器６を経由して陰極５に
印加され、陰極らに固定されているターゲット４の前面
にプラズマを発生させる。In this state, the high frequency voltage generated by the high frequency power supply 8 is applied to the cathode 5 via the measurement unit 7 and the matching device 6, and generates plasma in front of the target 4 fixed to the cathodes.
この結果、試料ホルダー３に保持されている試料２の表
面には所定の薄膜が形成される。この場合、整合器６は
高周波電源８の出力インピーダンスを負荷側のインピー
ダンスに整合させ、高周波電源８からの損失電力を最小
とするように作用する。As a result, a predetermined thin film is formed on the surface of the sample 2 held in the sample holder 3. In this case, the matching box 6 functions to match the output impedance of the high frequency power source 8 with the impedance on the load side, and to minimize power loss from the high frequency power source 8.
他方、測定部７においては高周波電源８から陰極５に入
力される高周波電力と損失電力の各々の積算電力が測定
され、演算部９に送られる。演算部９においては測定部
７から送られてきた前記入力積算電力と損失積算電力と
の差を算出し、制御部１０に送る。制御部１０では演算
部から送られてきた入力積算電力と損失積算電力との差
と、試料表面に形成される薄膜の膜厚に必要な積算電力
とを比較し、前記積算電力の差が薄膜形成に必要な積算
電力を超過した時点を検出し、高周波電源にスパッタリ
ングの停止信号を送る。高周波電源８においては、前記
停止信号の入力に対応して高周波電力の発生を停止し、
スパッタリングを停止する。従って、仮に負荷側のイン
ピーダンスが変化して高周波電力の損失が大となり、試
料２の表面における薄膜の形成速度が低下する状態にお
いても、前記停止信号によって薄膜形成時間が補正され
るため、試料２の表面の薄膜の膜厚は適正に形成される
。On the other hand, in the measuring section 7 , the integrated power of the high frequency power inputted to the cathode 5 from the high frequency power source 8 and the power loss is measured and sent to the calculating section 9 . The calculation section 9 calculates the difference between the input integrated power and the loss integrated power sent from the measuring section 7 and sends it to the control section 10. The control unit 10 compares the difference between the input integrated power and the loss integrated power sent from the calculation unit with the integrated power required for the thickness of the thin film formed on the sample surface, and the difference in the integrated power is It detects the point in time when the integrated power required for formation is exceeded and sends a sputtering stop signal to the high frequency power source. The high frequency power source 8 stops generating high frequency power in response to the input of the stop signal,
Stop sputtering. Therefore, even if the impedance on the load side changes and the loss of high-frequency power becomes large and the thin film formation rate on the surface of the sample 2 decreases, the thin film forming time is corrected by the stop signal, so the sample 2 The thickness of the thin film on the surface of is formed appropriately.
第２図は、第２の実施例の要部を示す概略ブロック図で
ある。第２図に示すように本実施例は、真空排気口１０
を有する真空容器１と、試料２が取り付けられた試料ホ
ルダー３と、ターゲット４が固定されている陰極５と、
整合器６と、測定部７と、高周波電源８と、演算部つと
、制御部１０と、シャッター１１と、シャッター駆動部
１２とを備えている。FIG. 2 is a schematic block diagram showing the main parts of the second embodiment. As shown in FIG. 2, in this embodiment, the vacuum exhaust port 10
a vacuum vessel 1 having a vacuum vessel 1, a sample holder 3 to which a sample 2 is attached, a cathode 5 to which a target 4 is fixed,
It includes a matching device 6, a measurement section 7, a high frequency power source 8, a calculation section, a control section 10, a shutter 11, and a shutter drive section 12.
第２図において整合器６．測測定７．演算部９及び高周
波電源８等の作用は前述の第１の実施例の場合と同様で
ある。この第２の実施例と第１の実施例との相違点は、
制御部９から出力される停止信号によってシャッター１
２の位置を制御するシャッター駆動部１３が追加されて
いることである。第２の実施例においては、負荷側のイ
ンピーダンスの変化に対応して、試料２の表面における
薄膜形成時間を制御する手段として、第１の実施例にお
ける高周波電源８の操作時間を制御する手段に加えて、
制御部１０から送られて来る停止信号によってシャッタ
ー駆動部１１によりシャッター１２の位置を制御し、ス
パッタリングを調整する手段が併用される。In FIG. 2, matching box 6. Measurement 7. The operations of the arithmetic unit 9, high frequency power source 8, etc. are the same as in the first embodiment described above. The differences between this second embodiment and the first embodiment are as follows:
The shutter 1 is activated by a stop signal output from the control unit 9.
A shutter driving section 13 that controls the position of No. 2 is added. In the second embodiment, the means for controlling the operating time of the high frequency power source 8 in the first embodiment is used as means for controlling the thin film formation time on the surface of the sample 2 in response to changes in impedance on the load side. In addition,
Means for controlling the position of the shutter 12 by the shutter drive section 11 in response to a stop signal sent from the control section 10 and adjusting sputtering is also used.
以上説明したように、本発明は高周波電源から出力され
る高周波電力と損失電力の双方の積算電力を測定し、こ
の積算電力の差を一定にするようにスパッタリング時間
を制御することにより、放電空間の圧力、残留ガス分圧
および真空槽内の構造物の形状等に起因する負荷インピ
ーダンスの変化に対応して、試料表面において常に所望
の膜厚を形成することができるという効果がある。As explained above, the present invention measures the integrated power of both the high-frequency power output from the high-frequency power supply and the power loss, and controls the sputtering time so that the difference in the integrated power is constant. This method has the advantage that a desired film thickness can always be formed on the sample surface in response to changes in load impedance caused by the pressure, residual gas partial pressure, and the shape of structures in the vacuum chamber.
第１図および第２図は、各々本発明の第１および第２の
実施例の要部を示す概略ブロック図である。
１・・・真空容器、２・・・試料、３・・・試料ホルダ
ー、４・・・ターゲット、５・・・陰極、６・・・整合
器、７・・・測定部、８・・・高周波電源、９・・・演
算部、１ｏ・・・制御部、１１・・・真空排気口、１２
・・・シャッター １３・・・シャッター駆動部。FIG. 1 and FIG. 2 are schematic block diagrams showing main parts of a first and second embodiment of the present invention, respectively. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Sample, 3... Sample holder, 4... Target, 5... Cathode, 6... Matching device, 7... Measurement part, 8... High frequency power supply, 9... Calculation unit, 1o... Control unit, 11... Vacuum exhaust port, 12
...Shutter 13...Shutter drive section.
Claims (1)
ゲットを表面に備える陰極と、前記陰極の前面に位置し
、前記試料の薄膜形成面が前記陰極の表面に対向するよ
うに試料を保持するホルダーと、前記陰極に所定の高周
波電圧を印加する高周波電源と、前記高周波電源より前
記陰極に入力される入力電力および損失電力の各々の積
算電力を測定する測定部と、前記測定部において測定さ
れた入力積算電力と損失積算電力との差を演算する演算
部と、前記演算部で算出された積算電力の差と予め設定
された積算電力とを比較することでスパッタリング時間
を制御する制御部とを備えることを特徴とするスパッタ
リング装置。a cathode having a target on its surface that is a material for a thin film to be formed on the surface of a predetermined sample; and a cathode located in front of the cathode and holding the sample such that the thin film forming surface of the sample faces the surface of the cathode. a holder, a high-frequency power source that applies a predetermined high-frequency voltage to the cathode, a measuring section that measures each integrated power of input power and loss power inputted to the cathode from the high-frequency power source; a calculation unit that calculates the difference between the input integrated power and the loss integrated power, and a control unit that controls sputtering time by comparing the difference in the integrated power calculated by the calculation unit with a preset integrated power. A sputtering device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26679490A JPH04143275A (en) | 1990-10-04 | 1990-10-04 | Sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26679490A JPH04143275A (en) | 1990-10-04 | 1990-10-04 | Sputtering system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04143275A true JPH04143275A (en) | 1992-05-18 |
Family
ID=17435782
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26679490A Pending JPH04143275A (en) | 1990-10-04 | 1990-10-04 | Sputtering system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04143275A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100271765B1 (en) * | 1997-03-07 | 2000-12-01 | 윤종용 | A plasma chamber for semiconductor processing |
| US20100116645A1 (en) * | 2007-03-27 | 2010-05-13 | Showa Denko K.K. | Surface processing method and manufacturing method of recording medium |
-
1990
- 1990-10-04 JP JP26679490A patent/JPH04143275A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100271765B1 (en) * | 1997-03-07 | 2000-12-01 | 윤종용 | A plasma chamber for semiconductor processing |
| US20100116645A1 (en) * | 2007-03-27 | 2010-05-13 | Showa Denko K.K. | Surface processing method and manufacturing method of recording medium |
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