JPH04140186A - Method and apparatus for transferring fine pattern - Google Patents

Method and apparatus for transferring fine pattern

Info

Publication number
JPH04140186A
JPH04140186A JP26486090A JP26486090A JPH04140186A JP H04140186 A JPH04140186 A JP H04140186A JP 26486090 A JP26486090 A JP 26486090A JP 26486090 A JP26486090 A JP 26486090A JP H04140186 A JPH04140186 A JP H04140186A
Authority
JP
Japan
Prior art keywords
transfer
workpiece
transfer substrate
pattern
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP26486090A
Other languages
Japanese (ja)
Other versions
JP3059473B2 (en
Inventor
Akira Okazaki
岡崎 暁
Kenichi Kubozono
久保薗 健一
Kenji Asaka
健二 浅香
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2264860A priority Critical patent/JP3059473B2/en
Publication of JPH04140186A publication Critical patent/JPH04140186A/en
Application granted granted Critical
Publication of JP3059473B2 publication Critical patent/JP3059473B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841Constructional issues related to vacuum environment, e.g. load-lock chamber

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Printing Methods (AREA)
  • Labeling Devices (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To accurately, sharply and efficiently transfer a fine pattern having fine line width and proper thickness while preventing adhesion inferiority by using a transfer substrate wherein a non-sticking transfer pattern is preliminarily formed on a substrate having flexibility and a sticking layer is formed thereon to perform transfer stationarily. CONSTITUTION:A transfer substrate 1 wherein a sticking layer 4 is provided on a non-sticking transfer pattern 3 is placed on a vacuum chuck table 20 to be held thereto in a reduced pressure state. An article 2 to be processed is mounted on a holder 10 to be held thereto. Compressed air is sent from a compressed air blowoff port 51 to pressurize the central part of the transfer substrate 1 by back pressure to closely bond the sticking layer 4 of the central part of the transfer substrate 1 to the article 2 to be processed. Next, the blowoff of compressed air is stopped and vacuum chuck table 20 is moved in the direction of the article 2 to be processed to bond the entire surface of the sticking layer under pressure. Continuously, the vacuum chuck table 20 is moved in the direction opposite to the direction opposed to the article 2 to be processed held to the work holder 10 to transfer the non-sticking transfer pattern to the article 2 to be processed from the outer peripheral part of the transfer substrate 1.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は微細パターンの転写方法および微細パターンの
転写装置に関し、さらに詳しくは、たとえば薄膜トラン
ジスター、薄膜ダイオード、太陽電池、薄膜センサー、
各種半導体素子、プリント基板等の機能性被加工物に微
細パターンを高い寸法精度および位置合わせ精度でしか
も効率良く転写することのできる微細パターンの転写方
法と、この方法において好適に使用することのできる微
細パターンの転写装置とに関する。また、本発明の微細
パターンの転写方法および微細パターンの転写装置は、
たとえば圧力センサー等の各種センサー、カラーフィル
タ、サーマルヘッド、カラーフィルタ、圧力センサー等
の製造における微細パターンの転写にも好適に用いるこ
とかできる。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a fine pattern transfer method and a fine pattern transfer apparatus, and more specifically, for example, thin film transistors, thin film diodes, solar cells, thin film sensors,
A fine pattern transfer method that can efficiently transfer fine patterns onto functional workpieces such as various semiconductor elements and printed circuit boards with high dimensional accuracy and alignment accuracy, and a method that can be suitably used in this method. The present invention relates to a fine pattern transfer device. Further, the fine pattern transfer method and fine pattern transfer apparatus of the present invention include:
For example, it can be suitably used for transferring fine patterns in the manufacture of various sensors such as pressure sensors, color filters, thermal heads, color filters, pressure sensors, etc.

[従来の技術] たとえば薄膜トランジスターを用いたカラー液晶デイス
プレー(TPT−LCD)はポケッ・トTV、ポータプ
ルTV等に用いられている。そして、近年においては、
20インチ、40インチ、70インチ等の大型液晶フラ
ットデイスプレーの開発か盛んである。
[Prior Art] For example, color liquid crystal displays (TPT-LCD) using thin film transistors are used in pocket TVs, portable TVs, and the like. And in recent years,
There is active development of large LCD flat displays such as 20 inches, 40 inches, and 70 inches.

この薄膜トランジスターは、通常、4〜6回程度のフォ
トリソグラフィー工程、つまりレジスト塗布、露光、現
像、エツチングの各処理を繰り返して行うことにより製
造されている。
This thin film transistor is usually manufactured by repeating the photolithography process about 4 to 6 times, that is, resist coating, exposure, development, and etching.

また、微細パターンの形成には、レジストパターンの印
刷、エツチング処理を繰り返す印刷法を用いることも可
能である。そして、印刷配線や回路パターンの形成ある
いは金属板のエツチング用レジストパターンの形成に際
しては、スクリーン印刷法やオフセット印刷法のような
印刷手段か広く採用されている。
Further, for forming the fine pattern, it is also possible to use a printing method in which printing and etching of a resist pattern are repeated. When forming printed wiring or circuit patterns or forming resist patterns for etching metal plates, printing methods such as screen printing and offset printing are widely used.

[発明か解決しようとする課題] ところで、上記のフォトリソグラフィー工程を繰り返し
て40インチ、70インチといった大型のTPT−LC
Dを製造しようとすれば、フォトリソグラフィー工程で
使用する専用の装置を開発しなければならないので、莫
大な費用か必要となる。特に、大型露光装置の開発費は
莫大なものとなる。
[Problem to be solved by the invention] By the way, by repeating the above photolithography process, large TPT-LCs such as 40 inches and 70 inches can be manufactured.
In order to manufacture D, it is necessary to develop a dedicated device for use in the photolithography process, which requires a huge amount of cost. In particular, the development costs for large-scale exposure equipment are enormous.

一方、微細パターンの形成に上記の印刷法を用いれば、
レジストパターンの印刷およびエツチング処理を繰り返
すことにより、40インチ、70インチといった大型の
TPT−LCDの製造にも比較的容易に対応することが
できる。
On the other hand, if the above printing method is used to form fine patterns,
By repeating printing and etching of resist patterns, it is possible to relatively easily manufacture large TPT-LCDs such as 40 inches and 70 inches.

しかしながら、これらの印刷手段は比較的画線の大きい
(たとえば200μm以上)パターンの形成には適して
いるか、画線幅かたとえば200μm未満の微細パター
ンの形成には必すしも適するものではない。しかも、印
刷手段においては、インキの流動性、版の圧力などの影
響やインキの一部か転移しないで版上に残留してしまう
こと等に起因してパターンか変形し易(、印刷パターン
の寸法精度および再現性に劣るという欠点かある。
However, these printing means are only suitable for forming patterns with relatively large image lines (for example, 200 μm or more), and are not necessarily suitable for forming fine patterns with image line widths of less than 200 μm, for example. Moreover, in the printing method, the pattern is easily deformed (the printed pattern is It has the disadvantage of poor dimensional accuracy and reproducibility.

例えば、スクリーン印刷法はメツシュ状スクリンにイン
キ遮蔽マスクを形成し、該遮蔽マスクの非マスク部を所
望のパターンとし、該非マスク部からインキを透過させ
て被印刷体にインキを付着させることにより印刷を行う
方法である。この印刷法ではインキの厚刷り(一般に数
μm−20μm厚)が容易なために耐蝕性の優れたレジ
ストパターンの印刷は可能であるか、実用印刷幅は最少
で200μm程度が限界であるために微細なパターンの
形成は困難である。また、オフセット印刷法は前もって
感光化されたプレートであるいわゆるps版(p+et
en+i+1zed plate)に親油性部と親水性
部とを形成し、親水性部に水分を保持させて油性インキ
を反発させることにより親油性部のみに選択的にインキ
を付着させ、かかるインキパターンを被印刷体に印刷す
る方法である。そして、この方法においては、特に印刷
適性の向上を図るために版上のインキパターンを一部ゴ
ムブランケットに転写した後に被印刷体に再転写するよ
う構成されている。この印刷法によると、比較的微細な
画線を容易に得ることかできる。しかしながら、この方
法で採用される動的なインキング方式やこの方法中で行
われる通常2回の転写操作等に起因して印刷されるイン
キ膜厚が1μm程度の小さなものとなり、印刷画線にピ
ンホールや断線が発生し易いという欠点かある。また、
この印刷法に関しては、インキの膜厚を大きくして耐蝕
性に優れた微細パターンを形成すべく種々の工夫がなさ
れているが、膜厚を大きくすると印刷画線が太くなり、
100〜200μm程度の線幅の印刷が限界である。
For example, in the screen printing method, an ink shielding mask is formed on a mesh-like screen, a desired pattern is formed on the non-masked portion of the shielding mask, and the ink is allowed to pass through the non-masked portion to adhere to the printing material. This is the way to do it. With this printing method, it is easy to print thick ink (generally several μm to 20 μm thick), so it is possible to print a resist pattern with excellent corrosion resistance.The practical printing width is limited to a minimum of about 200 μm. Forming fine patterns is difficult. In addition, the offset printing method uses a so-called PS plate (P+ET), which is a plate that has been sensitized in advance.
A lipophilic part and a hydrophilic part are formed on the en+i+1zed plate, and the hydrophilic part retains water and repels oil-based ink, thereby selectively adhering ink only to the lipophilic part, and covering the ink pattern. This is a method of printing on printed matter. In this method, the ink pattern on the plate is partially transferred to the rubber blanket and then retransferred to the printing material in order to particularly improve printing suitability. According to this printing method, relatively fine lines can be easily obtained. However, due to the dynamic inking method adopted in this method and the two transfer operations normally performed during this method, the printed ink film thickness is as small as about 1 μm, resulting in the print line being The disadvantage is that pinholes and wire breaks are likely to occur. Also,
Regarding this printing method, various efforts have been made to increase the ink film thickness and form fine patterns with excellent corrosion resistance, but as the film thickness increases, the printed lines become thicker.
The limit is printing with a line width of about 100 to 200 μm.

一方、比較的細線で印刷膜厚も大きくすることのできる
印刷手段として凹版印刷法が知られている。この方法に
おいては、彫刻法や食刻法により画線凹部を形成し、該
凹部に粘稠性を有する硬めのインキを擦り込み、非画線
部のインキを拭き取った後に銅板上に印刷用紙を当てた
状態で強圧して印刷を行う。強圧する理由は、凹部に擦
り込まれたインキが版表面より窪んた位置にあるため、
紙のような柔軟性印刷物に強圧着することにより強制的
にインキ面と被印刷物面とを接触させてインキを被印刷
物面上に転移させるためである。したがって、この凹版
印刷法では、たとえば薄膜半導体素子の基板に用いられ
るガラスに代表される剛性の高い被印刷物への印刷は困
難である。
On the other hand, intaglio printing is known as a printing method that allows relatively thin lines and a large printed film thickness. In this method, printing recesses are formed by engraving or etching, hard, viscous ink is rubbed into the recesses, and after wiping off the ink in the non-printing areas, printing paper is placed on the copper plate. Print by applying strong pressure. The reason for applying such strong pressure is that the ink rubbed into the recesses is located at a recessed position below the plate surface.
This is because the ink surface is forcibly brought into contact with the printing surface by strongly pressing onto a flexible printed material such as paper, and the ink is transferred onto the printing surface. Therefore, with this intaglio printing method, it is difficult to print on highly rigid substrates, such as glass used for substrates of thin film semiconductor devices.

また、従来のいずれの印刷方法においても、被印刷物と
転写パターンとの圧着を両者の全面にわたって同時に行
なうため、被印刷物と転写パターンとの間に空気が残存
する現象(いわゆる空気溜まり)によって局所的な密着
不良か生じ易く転写パターンが正確に転写されないこと
が多い。
In addition, in all conventional printing methods, since the printing material and the transfer pattern are simultaneously pressed together over the entire surface of both, the phenomenon of air remaining between the printing material and the transfer pattern (so-called air pockets) may occur locally. Poor adhesion tends to occur, and the transferred pattern is often not transferred accurately.

本発明は前記の事情に基ついてなされたものである。す
なわち、本発明は、従来の印刷法に比較して線幅か微細
で且つ膜厚の適度な微細パターンを前記のいわゆる空気
溜まりによる局所的な密着不良の発生を防止しつつ正確
且つ鮮明にしかも効率良く転写することのできる微細パ
ターンの転写方法と、この方法において特に好適に使用
することのできる微細パターンの転写装置とを提供する
ことを目的とする。
The present invention has been made based on the above circumstances. That is, the present invention enables a fine pattern with a finer line width and appropriate film thickness to be formed accurately and clearly while preventing the occurrence of local adhesion failure due to the so-called air pockets, compared to conventional printing methods. It is an object of the present invention to provide a method for transferring a fine pattern that can be efficiently transferred, and a device for transferring a fine pattern that can be particularly suitably used in this method.

[課題を解決するための手段] 前記の課題を解決するための本発明の要旨は、転写可能
な非粘着性転写パターンを可撓性を有する基板上に予め
形成し、その後、前記非粘着性転写パターン上に粘着層
を形成して転写基板を作製し、次いで、該転写基板の外
周部を減圧空間に接触させた状態で該転写基板と被加工
物とを所定の間隔て対向させて保持し、前記転写基板と
被加工物との位置合わせを行なってから前記転写基板の
中央部を前記被加工物と対向する面とは反対側の面から
加圧して該転写基板の中央部と前記被加工物とを密着さ
せ、その後、前記転写基板の全体を前記被加工物に圧着
し、しかる後、前記転写基板の外周部側から該転写基板
と前記被加工物とを弓き離すことにより前記被加工物に
前記転写パターンを転写させることを特徴とする微細パ
ターンの転写方法であり、 被加工物を保持するワークホルダーと、転写パターンを
有する転写基板を保持する減圧チャック台と、前記被加
工物と前記転写基板との位置関係を光学的に観察する観
察光学系と、該観察光学系で得られた情報に基ついて前
記被加工物に設けたワーク側レジスターマークと前記転
写基板に設けたパターン側レジスターマークとが所定の
アライメントギャップを維持した状態で重なって観察さ
れる位置まで前記ワークホルダーおよび前記減圧チャッ
ク台の少なくとも一方を移動させる平板移動機構とを有
し、前記減圧チャック台は前記転写基板の外周部に接す
る減圧空間部を備えると共に該転写基板における前記被
加工物との対向面を、その中央部から周端部に向けて順
次、前記被加工物に圧着可能な加圧機構を備えることを
特徴とする微細パターンの転写装置である。
[Means for Solving the Problems] The gist of the present invention for solving the above problems is to form a transferable non-adhesive transfer pattern on a flexible substrate in advance, and then apply the non-adhesive transfer pattern. A transfer substrate is produced by forming an adhesive layer on the transfer pattern, and then the transfer substrate and the workpiece are held facing each other at a predetermined distance with the outer periphery of the transfer substrate in contact with a reduced pressure space. After aligning the transfer substrate and the workpiece, pressure is applied to the central portion of the transfer substrate from a surface opposite to the surface facing the workpiece, so that the central portion of the transfer substrate and the workpiece are aligned. By bringing the transfer substrate into close contact with the workpiece, then pressing the entire transfer substrate onto the workpiece, and then separating the transfer substrate and the workpiece from the outer peripheral side of the transfer substrate. A method for transferring a fine pattern, characterized in that the transfer pattern is transferred to the workpiece, and the method includes: a work holder that holds the workpiece; a vacuum chuck stand that holds a transfer substrate having a transfer pattern; an observation optical system that optically observes the positional relationship between the workpiece and the transfer substrate; and a workpiece-side register mark provided on the workpiece and a register mark provided on the transfer substrate based on the information obtained by the observation optical system. a flat plate moving mechanism that moves at least one of the work holder and the vacuum chuck stand to a position where the work holder and the pattern side register mark are observed to overlap with each other while maintaining a predetermined alignment gap, the vacuum chuck stand being a pressure-reduced space in contact with the outer periphery of the transfer substrate, and pressurizing a surface of the transfer substrate facing the workpiece sequentially from the center toward the peripheral edge thereof to the workpiece; This is a fine pattern transfer device characterized by being equipped with a mechanism.

[作用] 本発明の微細パターンの転写方法においては、可撓性を
有する基板上に非粘着性転写パターンを予め形成すると
共に該非粘着性転写パターン上に粘着層を形成してなる
転写基板を使用し、転写パターン自体か有する粘性を利
用することなく静的に転写を行なう。したがって、たと
えば印刷インキの粘性を利用して被加工物への転写を行
なう動的な転写において問題となる圧着力、摺動力、弓
っ張り力等の種々の物理的な力の複雑な作用による影響
か排除され、正確な転写か実現する。
[Function] In the fine pattern transfer method of the present invention, a transfer substrate is used in which a non-adhesive transfer pattern is previously formed on a flexible substrate and an adhesive layer is formed on the non-adhesive transfer pattern. However, the transfer is performed statically without using the viscosity of the transfer pattern itself. Therefore, for example, in dynamic transfer that utilizes the viscosity of printing ink to perform transfer onto a workpiece, problems arise due to the complex effects of various physical forces such as pressure force, sliding force, and bow tension force. Effects are eliminated and accurate transcription is achieved.

また、可撓性を有する基板を用いてなる転写基板の外周
部を減圧空間に接触させた状態で該転写基板と被加工物
とを所定の間隔で対向させて保持し、転写基板と被加工
物との位置合わせを行なってから該転写基板の中央部を
被加工物と対向する面とは反対側の面から加圧して外周
部が前記減圧空間に接触したままの転写基板の中央部と
被加工物とを密着させ、その後、転写基板の全体を被加
工物に圧着し、しかる後、転写基板の外周部側から転写
基板と被加工物とを引き離すことにより、位置合わせ精
度か向上すると共に転写基板と被加工物との密着時に両
者間に空気が残存する現象(いわゆる空気溜まり)を排
除して局所的な密着不良の発生を防止する。
In addition, the transfer substrate and the workpiece are held facing each other at a predetermined distance with the outer periphery of the transfer substrate made of a flexible substrate in contact with a reduced pressure space, and the transfer substrate and the workpiece are held facing each other at a predetermined distance. After aligning with the object, pressure is applied to the central part of the transfer substrate from the surface opposite to the surface facing the workpiece, and the central part of the transfer substrate is pressed with the outer peripheral part remaining in contact with the depressurized space. The alignment accuracy is improved by bringing the transfer substrate into close contact with the workpiece, then pressing the entire transfer substrate onto the workpiece, and then separating the transfer substrate and the workpiece from the outer peripheral side of the transfer substrate. At the same time, the phenomenon in which air remains between the transfer substrate and the workpiece when they are in close contact with each other (so-called air pockets) is eliminated, thereby preventing the occurrence of local poor adhesion.

一方、本発明の微細パターンの転写装置においては、転
写基板と被加工物との位置関係を光学的に観察する観察
光学系と転写基板および被加工物の少なくとも一方を所
望の位置まで移動させる平板移動部とにより、被加工物
に設けたワーク側レジスターマークと転写基板に設けた
パターン側レジスターマークとか重なって観察される位
置まで転写基板および被加工物の少なくとも一方を移動
させ、その状態で転写基板および被加工物とを圧着する
ため、被加工物に転写される転写パターンの位置合わせ
精度が向上する。
On the other hand, the fine pattern transfer apparatus of the present invention includes an observation optical system that optically observes the positional relationship between the transfer substrate and the workpiece, and a flat plate that moves at least one of the transfer substrate and the workpiece to a desired position. The moving unit moves at least one of the transfer substrate and the workpiece to a position where the workpiece-side register mark provided on the workpiece and the pattern-side register mark provided on the transfer substrate are observed to overlap, and transfers in that state. Since the substrate and the workpiece are pressed together, the alignment accuracy of the transfer pattern transferred to the workpiece is improved.

しかも、転写基板と被加工物との圧着を、転写基板の外
周部を減圧空間に接触させることによって該転写基板を
保持する減圧チャック台上に載置保持された転写基板に
おける被加工物との対向面を、その中央部から周端部に
向けて順次、ワークホルダーに保持された被加工物に圧
着可能な加圧機構で加圧して行なうことにより、いわゆ
る空気溜まりを排除して局所的な密着不良の発生を防止
する。
Furthermore, the transfer substrate and the workpiece are pressed together by bringing the outer periphery of the transfer substrate into contact with the reduced pressure space, so that the transfer substrate is placed and held on the vacuum chuck stand that holds the transfer substrate, and the workpiece is pressed against the transfer substrate. By applying pressure to the facing surface sequentially from the center to the peripheral edge using a pressure mechanism that can press the workpiece held in the work holder, air pockets can be eliminated and localized Prevents the occurrence of poor adhesion.

[実施例] 以下、本発明の微細パターンの転写方法および微細パタ
ーンの転写装置について、図面を参照して説明する。
[Example] Hereinafter, a fine pattern transfer method and a fine pattern transfer apparatus of the present invention will be described with reference to the drawings.

第1図に転写基板1と被加工物2との関係を示す。FIG. 1 shows the relationship between the transfer substrate 1 and the workpiece 2. As shown in FIG.

第1図(a)に示すように、非粘着性転写パターン3お
よび粘着層4を設けた転写基板1と被加工物2とを10
μmのアライメントギャップgを設けた状態で対向させ
て配置した。
As shown in FIG. 1(a), a transfer substrate 1 provided with a non-adhesive transfer pattern 3 and an adhesive layer 4 and a workpiece 2 are placed in a
They were placed facing each other with an alignment gap g of μm.

ここで、転写基板1は厚さ0.15mrnのステンレス
基板にポリビニルアルコール(PVA)および重クロム
酸アンモニウムを主成分とする水溶性の感光液を塗布し
、次いで所定状状のマスクを用いて露光および現像処理
を行なって厚さ0. 5μm、線幅5μmのマスキング
層5を形成した。
Here, the transfer substrate 1 is a stainless steel substrate with a thickness of 0.15 mrn coated with a water-soluble photosensitive liquid containing polyvinyl alcohol (PVA) and ammonium dichromate as main components, and then exposed using a mask with a predetermined shape. Then, it is developed to a thickness of 0. A masking layer 5 having a thickness of 5 μm and a line width of 5 μm was formed.

このマスキング層5についてバーニング処理を施して耐
水性および電気絶縁性を強化した。
This masking layer 5 was subjected to a burning treatment to strengthen its water resistance and electrical insulation.

非粘着性転写パターン3は、ニッケル(N1)板を陽極
とし、ステンレス基板を陰極とする以下の浴組成および
条件の電解メツキ法を採用して膜厚0.7μmのニッケ
ル(Ni)メツキ層により形成した。
The non-adhesive transfer pattern 3 is formed by a nickel (Ni) plating layer with a thickness of 0.7 μm using an electrolytic plating method with the following bath composition and conditions, using a nickel (N1) plate as an anode and a stainless steel substrate as a cathode. Formed.

浴組成 硫酸ニッケル 塩化ニッケル はう酸 条件 H 温度 電流密度 250g/1 4 5  g/  1 30g/1 4.5 50℃ 5A/dm2 なお、非粘着性転写パターン3の形成材料としては本実
施例で用いたニッケル(N])の他に例えばCr、Fe
、Ag、Au5Cu、Zn、Snまたはこれらの化合物
、合金類あるいはエポキシ樹脂系、ウレタン樹脂系、ア
クリル樹脂系等の有機高分子材料からなる各種電着レジ
ストを用いることも可能である。
Bath Composition Nickel Sulfate Nickel Chloride Oxalic Acid Condition H Temperature Current Density 250 g/145 g/130 g/14.5 50°C 5 A/dm2 In this example, the material for forming the non-adhesive transfer pattern 3 was In addition to the nickel (N) used, for example, Cr, Fe
It is also possible to use various electrodeposition resists made of organic polymer materials such as , Ag, Au5Cu, Zn, Sn, compounds or alloys thereof, or epoxy resins, urethane resins, and acrylic resins.

また、粘着層4は酢酸ビニル系の粘着溶液を非粘着性転
写パターン3の全面に厚さ0.3μmで塗布して形成し
た。
The adhesive layer 4 was formed by applying a vinyl acetate-based adhesive solution to the entire surface of the non-adhesive transfer pattern 3 to a thickness of 0.3 μm.

ここで、本実施例においては、粘着層4を非粘着性転写
パターン3上に塗設したが、粘着層4を被加工物2上に
形成することも可能である。
Here, in this embodiment, the adhesive layer 4 is coated on the non-adhesive transfer pattern 3, but it is also possible to form the adhesive layer 4 on the workpiece 2.

本実施例においては前述のようにして作製した転写基板
1を第1図(a)に示すように本発明の転写装置におけ
る減圧チャック台に載置して保持させた。
In this example, the transfer substrate 1 produced as described above was placed and held on the vacuum chuck stand of the transfer apparatus of the present invention, as shown in FIG. 1(a).

ここで、本発明の微細パターンの転写装置は、たとえば
第2図に示すように、ワークホルダー10と、減圧チャ
ック台20と、観察光学系30と、平板移動機構40と
を備えている。
Here, the fine pattern transfer apparatus of the present invention includes a work holder 10, a vacuum chuck stand 20, an observation optical system 30, and a flat plate moving mechanism 40, as shown in FIG. 2, for example.

減圧チャック台20は、たとえば第3図に示すように、
定盤21を用いて構成され、転写基板1を載置する面と
は反対側の面に、例えば真空ポンプにより減圧可能な減
圧空間部22を備えている。
The vacuum chuck stand 20 is, for example, as shown in FIG.
It is constructed using a surface plate 21, and is provided with a depressurized space 22 that can be depressurized by, for example, a vacuum pump on the surface opposite to the surface on which the transfer substrate 1 is placed.

そして、この減圧空間部22には転写基板1を載置する
面に臨む減圧空間連通孔23が形成されている。すなわ
ち、減圧空間部22の圧力を調節して減圧状態、望まし
くは真空状態もしくはそれに近い状態に減圧すれば、外
周部が減圧空間連通孔23に当接する状態で定盤21上
に載置された転写基板1は大気圧により減圧空間部22
の方向へ加圧されて保持される。また、減圧チャック台
20は、加圧機構50を備えている。この加圧機構50
は、たとえば第3図に示すように、定盤21上に載置さ
れた転写基板1の中央部に当接するように設けられた圧
縮空気吹き出し孔51とこれに接続される圧縮ポンプ5
2とを用いて構成される。すなわち、減圧空間部22を
減圧状態にすることによって保持されている転写基板1
の中央部に圧縮空気吹き出し孔51から圧縮空気を当て
れば、第1図(b)に示すように転写基板1の中央部が
加圧されて転写基板1の中央部は、所定のアライメント
ギャップを隔ててワークホルダー10に保持されている
被加工物2の被加工面に密着する。
A reduced pressure space communication hole 23 facing the surface on which the transfer substrate 1 is placed is formed in this reduced pressure space portion 22 . That is, when the pressure in the decompression space 22 is adjusted to reduce the pressure to a reduced pressure state, preferably to a vacuum state or a state close to it, the outer circumferential portion is placed on the surface plate 21 in a state where it is in contact with the reduced pressure space communication hole 23. The transfer substrate 1 is in a depressurized space 22 due to atmospheric pressure.
It is pressurized and held in the direction of . Further, the vacuum chuck stand 20 includes a pressurizing mechanism 50. This pressure mechanism 50
For example, as shown in FIG. 3, there is a compressed air blowing hole 51 provided so as to come into contact with the center of the transfer substrate 1 placed on the surface plate 21, and a compression pump 5 connected thereto.
2. That is, the transfer substrate 1 held by bringing the reduced pressure space 22 into a reduced pressure state
When compressed air is applied to the center of the transfer substrate 1 from the compressed air outlet 51, the center of the transfer substrate 1 is pressurized as shown in FIG. It comes into close contact with the surface to be processed of the workpiece 2 held on the work holder 10 with a distance therebetween.

観察光学系30は、転写基板1と被加工物2との位置関
係を光学的に観察可能であり、たとえば第2図に示すよ
うに、CCDカメラ31、顕微鏡32、落射照明装置3
3、CCU (電子ライン発生装置)34、TVモニタ
ー35を用いて構成することかできる。この観察光学系
3oは2系統以上設けることが好ましい。観察光学系3
oを2系統以上設けることにより、同時に複数箇所での
観察が可能である。ただし、観察光学系3oを1系統し
か設けない場合であっても、該観察光学系が移動可能で
あれば複数箇所での観察は可能である。
The observation optical system 30 is capable of optically observing the positional relationship between the transfer substrate 1 and the workpiece 2, and includes, for example, a CCD camera 31, a microscope 32, and an epi-illumination device 3, as shown in FIG.
3. It can be configured using a CCU (electronic line generator) 34 and a TV monitor 35. It is preferable to provide two or more observation optical systems 3o. Observation optical system 3
By providing two or more systems of o, observation at multiple locations is possible at the same time. However, even if only one system of observation optical system 3o is provided, observation at multiple locations is possible if the observation optical system is movable.

第4図に示すように観察光学系3oにはアライメント量
算出部36が接続されている。
As shown in FIG. 4, an alignment amount calculation section 36 is connected to the observation optical system 3o.

アライメント量算出部36は、観察光学系3゜で得られ
た情報により、転写基板1に設けたパターン側レジスタ
ーマークと被加工物2に設けたワーク側レジスターマー
クとの位置ずれを算出する機能を有する。
The alignment amount calculation unit 36 has a function of calculating the positional deviation between the pattern-side register mark provided on the transfer substrate 1 and the work-side register mark provided on the workpiece 2 based on the information obtained by the observation optical system 3°. have

このアライメント量算出部36は、第4図に示すように
、たとえば、入出力インターフェース(Ilo)とコン
トロールプロセシングユニット(CPU)とランダムア
クセスメモリー(RAM)とを用いて構成することがで
きる。
As shown in FIG. 4, this alignment amount calculation section 36 can be configured using, for example, an input/output interface (Ilo), a control processing unit (CPU), and a random access memory (RAM).

アライメント量算出部36での算出結果は、ステージ制
御部37を介して制御信号として平板移動機構40へ出
力される。
The calculation result by the alignment amount calculation section 36 is outputted to the flat plate moving mechanism 40 as a control signal via the stage control section 37.

すなわち、ステージ制御部37においては、2次座標系
(x−y座標系)におけるパターン側レジスターマーク
とワーク側レジスターマークとの位置関係に関し、所定
のアライメントギャップを維持しつつパターン側レジス
ターマークとワーク側レジスターマークとか重なり合っ
て観察される位置までワークホルダー10および減圧チ
ャック台20の少なくとも一方か移動するのに必要な制
御信号か平板移動機構40へ出力される。
That is, the stage control unit 37 maintains a predetermined alignment gap between the pattern side register mark and the workpiece with respect to the positional relationship between the pattern side register mark and the workpiece side register mark in the secondary coordinate system (x-y coordinate system). A control signal necessary to move at least one of the work holder 10 and the vacuum chuck stand 20 to a position where the side register marks are observed to overlap is output to the flat plate moving mechanism 40.

ワークホルダー10および減圧チャック台20の少なく
とも一方に設けられる平板移動機構40は、たとえばリ
ニアモーターや精密パルスモータ−なとの各種モーター
を用いて構成することができる。
The flat plate moving mechanism 40 provided on at least one of the work holder 10 and the vacuum chuck stand 20 can be configured using various motors such as a linear motor or a precision pulse motor.

本実施例においては、以上の構成の転写装置を使用して
前述のように転写基板1を減圧チャック台20上に載置
し、減圧空間部22を減圧状態にして転写基板1を保持
した。
In this example, using the transfer apparatus having the above configuration, the transfer substrate 1 was placed on the vacuum chuck table 20 as described above, and the transfer substrate 1 was held with the vacuum space 22 in a reduced pressure state.

一方、被加工物2はワークホルダー10に取り付けて保
持させた。
On the other hand, the workpiece 2 was attached to and held by the work holder 10.

この被加工物2はガラス基板上にp−8j(ポリシリコ
ン)膜を厚さ0.1μmで成膜してなるものを使用した
This workpiece 2 was formed by forming a p-8j (polysilicon) film to a thickness of 0.1 μm on a glass substrate.

次に、転写基板1と被加工物2との位置関係を観察光学
系30のTVモニター35で光学的に観察しながら第5
図に示すように転写基板1に設けたパターン側レジスタ
ーマーク11と被加工物2に設けたワーク側レジスター
マーク12とか重なって見える位置まで減圧チャック台
20を平板移動機構40により移動させた。
Next, while optically observing the positional relationship between the transfer substrate 1 and the workpiece 2 on the TV monitor 35 of the observation optical system 30,
As shown in the figure, the vacuum chuck table 20 was moved by the flat plate moving mechanism 40 to a position where the pattern-side register mark 11 provided on the transfer substrate 1 and the work-side register mark 12 provided on the workpiece 2 overlapped.

その後、減圧空間部22を減圧状態にして転写基板1を
保持した状態のままで減圧チャック20の圧縮空気吹き
出し口51から圧縮空気を送り、バックプレッシャーに
より転写基板1の中央部を加圧し、第1図(b)に示す
ように転写基板1の中央部の粘着層4を被加工物2に密
着させた。
Thereafter, compressed air is sent from the compressed air outlet 51 of the vacuum chuck 20 while the vacuum space 22 is in a vacuum state and the transfer substrate 1 is held, and the central part of the transfer substrate 1 is pressurized by back pressure. As shown in FIG. 1(b), the adhesive layer 4 at the center of the transfer substrate 1 was brought into close contact with the workpiece 2.

次に、圧縮空気吹き出し口51からの圧縮空気の吹き出
しを止め、減圧チャック台20をワークホルダー10に
保持された被加工物2の方向へ移動させて第1図(c)
に示すように転写基板1の粘着層4の全面を被加工物2
に圧着した。なお、この圧着を真空状態にしたエアーチ
ャンバー内で行なうことも可能である。真空状態にした
エアーチャンバー内で圧着すれば前記のいわゆる空気溜
まりによる局所的な密着不良が生しる可能性をさらに減
少させることができる。
Next, the blowing of compressed air from the compressed air outlet 51 is stopped, and the vacuum chuck stand 20 is moved toward the workpiece 2 held by the work holder 10, as shown in FIG. 1(c).
As shown in FIG.
It was crimped. Note that it is also possible to perform this pressure bonding in an air chamber in a vacuum state. If the pressure bonding is performed in an air chamber in a vacuum state, the possibility of local adhesion failure due to the so-called air pockets described above can be further reduced.

続いて減圧チャック台20をワークホルダー10に保持
された被加工物2と対向する方向とは反対側の方向へ移
動させて第1図(d)に示すように転写基板1の外周側
から非粘着性転写パターン3を被加工物2に転写し、転
写終了後、以上の工程を繰り返すことにより被加工物2
に複数のパターンを転写させた。
Next, the vacuum chuck stand 20 is moved in the direction opposite to the direction in which it faces the workpiece 2 held on the work holder 10, and as shown in FIG. The adhesive transfer pattern 3 is transferred to the workpiece 2, and after the transfer is completed, the above steps are repeated to form the workpiece 2.
Multiple patterns were transferred to.

この被加工物2に転写された転写パターンは、線幅か1
0μm程度以下の微細な部分においても、正確かつ鮮明
であると共に膜厚が適度であり、また位置合わせ精度に
も優れていた。
The transfer pattern transferred to this workpiece 2 has a line width of 1
Even in minute parts of about 0 μm or less, the film was accurate and clear, the film thickness was appropriate, and the alignment accuracy was excellent.

なお、本実施例においてはいわゆる平行平板型の印刷方
式を採用して転写を行なったか、本発明の転写方法およ
び転写装置はいわゆる垂直平板型の印刷方式においても
利用可能である。
In this embodiment, a so-called parallel plate type printing method was adopted for the transfer, but the transfer method and transfer apparatus of the present invention can also be used in a so-called perpendicular plate type printing method.

[発明の効果] 本発明によると、転写基板と被加工物との密着時に両者
間に残存する空気を排除することができるので、いわゆ
る空気溜まりにより生しる局所的な密着不良を防止する
ことかできるとともに、転写基板と被加工物との正確な
位置合わせを行なってからそれ自体は粘着性のない非粘
着性転写パターンを粘着層を介して被加工物へ転写する
ので、微細な転写パターンの転写を高い寸法精度および
再現性で正確に行うことか可能であり、たとえば印刷法
を採用して薄膜半導体素子を製造する場合に好適に採用
することのできる微細パターンの転写方法を提供するこ
とかきる。
[Effects of the Invention] According to the present invention, air remaining between the transfer substrate and the workpiece can be removed when they are brought into close contact with each other, thereby preventing local adhesion failure caused by so-called air pockets. At the same time, the non-adhesive transfer pattern itself is transferred to the workpiece via the adhesive layer after accurate positioning between the transfer substrate and the workpiece, resulting in a fine transfer pattern. To provide a method for transferring a fine pattern, which can be accurately transferred with high dimensional accuracy and reproducibility, and can be suitably adopted when, for example, a printing method is adopted to manufacture thin film semiconductor elements. Write.

また、本発明によれば、観察光学系と減圧チャック台と
平板移動機構と加圧装置とを備えるので、転写基板と被
加工物との整合を正確かつ容易に行なうことかできると
ともに被加工物と転写基板との圧着を両者間に残存する
空気を排除した状態て行なうことが可能であり、高い位
置合わせ精度および寸法精度で正確に、且つ高い再現性
で効率良く鮮明な微細パターンを被加工物に転写させる
ことのできる微細パターンの転写装置を提供することか
きる。
Further, according to the present invention, since the observation optical system, the vacuum chuck stand, the flat plate moving mechanism, and the pressure device are provided, the transfer substrate and the workpiece can be accurately and easily aligned, and the workpiece can be It is possible to press the transfer substrate with the transfer substrate while eliminating any remaining air between the two, and it is possible to process clear fine patterns accurately with high alignment and dimensional accuracy, and with high reproducibility efficiently. It is an object of the present invention to provide a transfer device for fine patterns that can be transferred onto objects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)〜(d)は本発明の微細パターンの転写方
法における転写基板と被加工物との関係を工程順に示す
説明図、第2図は本発明の微細パターンの転写装置の構
成の一例を示す説明図、第3図は本発明の微細パターン
の転写装置における減圧チャックの構成を模式的に示す
説明図、第4図は本発明の微細パターンの転写装置にお
ける観察光学系と平板移動機構との関係の一例を示す説
明図、第5図は本発明の微細パターンの転写装置におけ
る観察光学系により画像として得られる情報の一例を示
す説明図である。 1・・・転写基板、2・・・被加工物、3・・・非粘着
性転写パターン、4・・・粘着層、10・・・ワークホ
ルダー11 ・パターン側レジスターマーク、12・・
・ワーク側レジスターマーク、20・・・減圧チャック
台、22・・・空間空間部、30・・・観察光学系、4
0・・・平板移動機構、50・・・加圧機構。
1(a) to (d) are explanatory diagrams showing the relationship between the transfer substrate and the workpiece in the process order in the fine pattern transfer method of the present invention, and FIG. 2 is the configuration of the fine pattern transfer apparatus of the present invention. An explanatory diagram showing an example, FIG. 3 is an explanatory diagram schematically showing the configuration of a vacuum chuck in the fine pattern transfer device of the present invention, and FIG. 4 is an explanatory diagram showing the observation optical system and flat plate in the fine pattern transfer device of the present invention. FIG. 5 is an explanatory diagram showing an example of the relationship with the moving mechanism, and FIG. 5 is an explanatory diagram showing an example of information obtained as an image by the observation optical system in the fine pattern transfer apparatus of the present invention. DESCRIPTION OF SYMBOLS 1... Transfer substrate, 2... Workpiece, 3... Non-adhesive transfer pattern, 4... Adhesive layer, 10... Work holder 11 ・Pattern side register mark, 12...
- Work side register mark, 20... Decompression chuck stand, 22... Spatial space section, 30... Observation optical system, 4
0... Flat plate moving mechanism, 50... Pressure mechanism.

Claims (2)

【特許請求の範囲】[Claims] 1.転写可能な非粘着性転写パターンを可撓性を有する
基板上に予め形成し、その後、前記非粘着性転写パター
ン上に粘着層を形成して転写基板を作製し、次いで、該
転写基板の外周部を減圧空間に接触させた状態で該転写
基板と被加工物とを所定の間隔で対向させて保持し、前
記転写基板と被加工物との位置合わせを行なってから前
記転写基板の中央部を前記被加工物と対向する面とは反
対側の面から加圧して該転写基板の中央部と前記被加工
物とを密着させ、その後、前記転写基板の全体を前記被
加工物に圧着し、しかる後、前記転写基板の外周部側か
ら該転写基板と前記被加工物とを引き離すことにより前
記被加工物に前記転写パターンを転写させることを特徴
とする微細パターンの転写方法。
1. A transferable non-adhesive transfer pattern is previously formed on a flexible substrate, and then an adhesive layer is formed on the non-adhesive transfer pattern to produce a transfer substrate, and then the outer periphery of the transfer substrate is The transfer substrate and the workpiece are held facing each other at a predetermined distance with the parts in contact with a depressurized space, and after aligning the transfer substrate and the workpiece, the central part of the transfer substrate is is pressed from a surface opposite to the surface facing the workpiece to bring the central part of the transfer substrate into close contact with the workpiece, and then the entire transfer substrate is pressed onto the workpiece. A method for transferring a fine pattern, characterized in that the transfer pattern is transferred to the workpiece by separating the transfer substrate and the workpiece from the outer peripheral side of the transfer substrate.
2.被加工物を保持するワークホルダーと、転写パター
ンを有する転写基板を保持する減圧チャック台と、前記
被加工物と前記転写基板との位置関係を光学的に観察す
る観察光学系と、該観察光学系で得られた情報に基づい
て前記被加工物に設けたワーク側レジスターマークと前
記転写基板に設けたパターン側レジスターマークとが所
定のアライメントギャップを維持した状態で重なって観
察される位置まで前記ワークホルダーおよび前記減圧チ
ャック台の少なくとも一方を移動させる平板移動機構と
を有し、前記減圧チャック台は前記転写基板の外周部に
接する減圧空間部を備えると共に該転写基板における前
記被加工物との対向面を、その中央部から周端部に向け
て順次、前記被加工物に圧着可能な加圧機構を備えるこ
とを特徴とする微細パターンの転写装置。
2. A work holder that holds a workpiece, a vacuum chuck stand that holds a transfer substrate having a transfer pattern, an observation optical system that optically observes the positional relationship between the workpiece and the transfer substrate, and the observation optical system. Based on the information obtained by the system, the workpiece-side register mark provided on the workpiece and the pattern-side register mark provided on the transfer substrate are observed to overlap while maintaining a predetermined alignment gap. a flat plate moving mechanism for moving at least one of a work holder and the vacuum chuck stand, the vacuum chuck stand having a vacuum space in contact with the outer periphery of the transfer substrate, and a space between the workpiece and the workpiece on the transfer substrate. 1. A micropattern transfer device comprising a pressing mechanism capable of pressing an opposing surface onto the workpiece sequentially from the center toward the peripheral edge.
JP2264860A 1990-10-01 1990-10-01 Fine pattern transfer method and fine pattern transfer device Expired - Fee Related JP3059473B2 (en)

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JP2264860A JP3059473B2 (en) 1990-10-01 1990-10-01 Fine pattern transfer method and fine pattern transfer device

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Application Number Priority Date Filing Date Title
JP2264860A JP3059473B2 (en) 1990-10-01 1990-10-01 Fine pattern transfer method and fine pattern transfer device

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JPH04140186A true JPH04140186A (en) 1992-05-14
JP3059473B2 JP3059473B2 (en) 2000-07-04

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