JPH0413775A - M-phenylenediamine compound and electrophotograghic photoreceptor containing the same - Google Patents
M-phenylenediamine compound and electrophotograghic photoreceptor containing the sameInfo
- Publication number
- JPH0413775A JPH0413775A JP11613290A JP11613290A JPH0413775A JP H0413775 A JPH0413775 A JP H0413775A JP 11613290 A JP11613290 A JP 11613290A JP 11613290 A JP11613290 A JP 11613290A JP H0413775 A JPH0413775 A JP H0413775A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- phenylenediamine
- group
- formula
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 108091008695 photoreceptors Proteins 0.000 title claims abstract description 42
- -1 M-phenylenediamine compound Chemical class 0.000 title claims abstract description 32
- 229940018564 m-phenylenediamine Drugs 0.000 title claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 13
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 11
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims abstract description 6
- 125000003118 aryl group Chemical group 0.000 claims abstract description 6
- 125000003277 amino group Chemical group 0.000 claims description 10
- 125000005843 halogen group Chemical group 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 49
- 150000001875 compounds Chemical class 0.000 abstract description 47
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 31
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 abstract description 18
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 abstract description 18
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 11
- 229910000027 potassium carbonate Inorganic materials 0.000 abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 6
- 239000002904 solvent Substances 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 5
- KWYHDKDOAIKMQN-UHFFFAOYSA-N N,N,N',N'-tetramethylethylenediamine Chemical compound CN(C)CCN(C)C KWYHDKDOAIKMQN-UHFFFAOYSA-N 0.000 abstract description 4
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052736 halogen Inorganic materials 0.000 abstract description 3
- 150000002367 halogens Chemical class 0.000 abstract description 3
- 229910052740 iodine Inorganic materials 0.000 abstract description 3
- 239000011630 iodine Substances 0.000 abstract description 3
- 238000012546 transfer Methods 0.000 abstract description 3
- 150000005207 1,3-dihydroxybenzenes Chemical class 0.000 abstract description 2
- 150000001448 anilines Chemical class 0.000 abstract description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 38
- 230000015572 biosynthetic process Effects 0.000 description 29
- 238000003786 synthesis reaction Methods 0.000 description 28
- 229920005989 resin Polymers 0.000 description 22
- 239000011347 resin Substances 0.000 description 22
- 238000006243 chemical reaction Methods 0.000 description 19
- 239000011230 binding agent Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 239000002356 single layer Substances 0.000 description 13
- 239000000049 pigment Substances 0.000 description 12
- 238000000576 coating method Methods 0.000 description 11
- 125000001424 substituent group Chemical group 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 8
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000010992 reflux Methods 0.000 description 6
- RINOYHWVBUKAQE-UHFFFAOYSA-N 1-iodo-2-methylbenzene Chemical compound CC1=CC=CC=C1I RINOYHWVBUKAQE-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 3
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 3
- BPXOSLOVNFTIJE-UHFFFAOYSA-N 4,6-dichloro-1-n,3-n-bis(3-methylphenyl)benzene-1,3-diamine Chemical compound CC1=CC=CC(NC=2C(=CC(Cl)=C(NC=3C=C(C)C=CC=3)C=2)Cl)=C1 BPXOSLOVNFTIJE-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000008424 iodobenzenes Chemical class 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 2
- 150000004866 oxadiazoles Chemical class 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 150000004986 phenylenediamines Chemical class 0.000 description 2
- 238000001782 photodegradation Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 150000003219 pyrazolines Chemical class 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- QIUGUNHEXAZYIY-UHFFFAOYSA-N 1,2-dinitroacridine Chemical compound C1=CC=CC2=CC3=C([N+]([O-])=O)C([N+](=O)[O-])=CC=C3N=C21 QIUGUNHEXAZYIY-UHFFFAOYSA-N 0.000 description 1
- NMNSBFYYVHREEE-UHFFFAOYSA-N 1,2-dinitroanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=C([N+]([O-])=O)C([N+](=O)[O-])=CC=C3C(=O)C2=C1 NMNSBFYYVHREEE-UHFFFAOYSA-N 0.000 description 1
- FKASFBLJDCHBNZ-UHFFFAOYSA-N 1,3,4-oxadiazole Chemical compound C1=NN=CO1 FKASFBLJDCHBNZ-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- WDCYWAQPCXBPJA-UHFFFAOYSA-N 1,3-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC([N+]([O-])=O)=C1 WDCYWAQPCXBPJA-UHFFFAOYSA-N 0.000 description 1
- VLCPISYURGTGLP-UHFFFAOYSA-N 1-iodo-3-methylbenzene Chemical compound CC1=CC=CC(I)=C1 VLCPISYURGTGLP-UHFFFAOYSA-N 0.000 description 1
- SBFJWYYUVYESMJ-UHFFFAOYSA-N 1-n,1-n,3-n,3-n-tetrakis(3-methylphenyl)benzene-1,3-diamine Chemical compound CC1=CC=CC(N(C=2C=C(C)C=CC=2)C=2C=C(C=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 SBFJWYYUVYESMJ-UHFFFAOYSA-N 0.000 description 1
- AQNVSKCCJUKCAD-UHFFFAOYSA-N 1-n,3-n-bis(3-methylphenyl)-4-phenylbenzene-1,3-diamine Chemical compound CC1=CC=CC(NC=2C=C(NC=3C=C(C)C=CC=3)C(=CC=2)C=2C=CC=CC=2)=C1 AQNVSKCCJUKCAD-UHFFFAOYSA-N 0.000 description 1
- YCANAXVBJKNANM-UHFFFAOYSA-N 1-nitroanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2[N+](=O)[O-] YCANAXVBJKNANM-UHFFFAOYSA-N 0.000 description 1
- BTECWVALCNVZFJ-UHFFFAOYSA-N 2,4,5,6-tetranitrofluoren-9-one Chemical compound O=C1C2=CC=C([N+]([O-])=O)C([N+]([O-])=O)=C2C2=C1C=C([N+](=O)[O-])C=C2[N+]([O-])=O BTECWVALCNVZFJ-UHFFFAOYSA-N 0.000 description 1
- BAHPQISAXRFLCL-UHFFFAOYSA-N 2,4-Diaminoanisole Chemical compound COC1=CC=C(N)C=C1N BAHPQISAXRFLCL-UHFFFAOYSA-N 0.000 description 1
- VOZKAJLKRJDJLL-UHFFFAOYSA-N 2,4-diaminotoluene Chemical compound CC1=CC=C(N)C=C1N VOZKAJLKRJDJLL-UHFFFAOYSA-N 0.000 description 1
- FALRKNHUBBKYCC-UHFFFAOYSA-N 2-(chloromethyl)pyridine-3-carbonitrile Chemical compound ClCC1=NC=CC=C1C#N FALRKNHUBBKYCC-UHFFFAOYSA-N 0.000 description 1
- GEKJEMDSKURVLI-UHFFFAOYSA-N 3,4-dibromofuran-2,5-dione Chemical compound BrC1=C(Br)C(=O)OC1=O GEKJEMDSKURVLI-UHFFFAOYSA-N 0.000 description 1
- VJTZHXQAZLGBHV-UHFFFAOYSA-N 3-n-phenylbenzene-1,3-diamine Chemical compound NC1=CC=CC(NC=2C=CC=CC=2)=C1 VJTZHXQAZLGBHV-UHFFFAOYSA-N 0.000 description 1
- SSXPQLXWKPOYLJ-UHFFFAOYSA-N 4,6-dichlorobenzene-1,3-diamine Chemical compound NC1=CC(N)=C(Cl)C=C1Cl SSXPQLXWKPOYLJ-UHFFFAOYSA-N 0.000 description 1
- CLQYLLIGYDFCGY-UHFFFAOYSA-N 4-(2-anthracen-9-ylethenyl)-n,n-diethylaniline Chemical compound C1=CC(N(CC)CC)=CC=C1C=CC1=C(C=CC=C2)C2=CC2=CC=CC=C12 CLQYLLIGYDFCGY-UHFFFAOYSA-N 0.000 description 1
- CNIFZSLRKTVMPI-UHFFFAOYSA-N 4-methoxy-1-n,3-n-bis(3-methylphenyl)benzene-1,3-diamine Chemical compound C1=C(NC=2C=C(C)C=CC=2)C(OC)=CC=C1NC1=CC=CC(C)=C1 CNIFZSLRKTVMPI-UHFFFAOYSA-N 0.000 description 1
- GPJJASIJVRXZFI-UHFFFAOYSA-N 4-methoxybenzene-1,3-diol Chemical compound COC1=CC=C(O)C=C1O GPJJASIJVRXZFI-UHFFFAOYSA-N 0.000 description 1
- RMKYCASVNADONB-UHFFFAOYSA-N 4-methyl-1-n,1-n,3-n,3-n-tetrakis(3-methylphenyl)benzene-1,3-diamine Chemical compound CC1=CC=CC(N(C=2C=C(C)C=CC=2)C=2C=C(C(C)=CC=2)N(C=2C=C(C)C=CC=2)C=2C=C(C)C=CC=2)=C1 RMKYCASVNADONB-UHFFFAOYSA-N 0.000 description 1
- DGRGLKZMKWPMOH-UHFFFAOYSA-N 4-methylbenzene-1,2-diamine Chemical compound CC1=CC=C(N)C(N)=C1 DGRGLKZMKWPMOH-UHFFFAOYSA-N 0.000 description 1
- LYXCJGJSIWFKHZ-UHFFFAOYSA-N 4-phenylbenzene-1,3-diol Chemical compound OC1=CC(O)=CC=C1C1=CC=CC=C1 LYXCJGJSIWFKHZ-UHFFFAOYSA-N 0.000 description 1
- XYPMAZCBFKBIFK-UHFFFAOYSA-N 9,10-dinitroanthracene Chemical compound C1=CC=C2C([N+](=O)[O-])=C(C=CC=C3)C3=C([N+]([O-])=O)C2=C1 XYPMAZCBFKBIFK-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 239000004709 Chlorinated polyethylene Substances 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000004641 Diallyl-phthalate Substances 0.000 description 1
- 235000000177 Indigofera tinctoria Nutrition 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- 241000143950 Vanessa Species 0.000 description 1
- 229920002433 Vinyl chloride-vinyl acetate copolymer Polymers 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 125000004054 acenaphthylenyl group Chemical group C1(=CC2=CC=CC3=CC=CC1=C23)* 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
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- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- CECABOMBVQNBEC-UHFFFAOYSA-K aluminium iodide Chemical compound I[Al](I)I CECABOMBVQNBEC-UHFFFAOYSA-K 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PGEHNUUBUQTUJB-UHFFFAOYSA-N anthanthrone Chemical compound C1=CC=C2C(=O)C3=CC=C4C=CC=C5C(=O)C6=CC=C1C2=C6C3=C54 PGEHNUUBUQTUJB-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- YCOXTKKNXUZSKD-UHFFFAOYSA-N as-o-xylenol Natural products CC1=CC=C(O)C=C1C YCOXTKKNXUZSKD-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- JSYBAZQQYCNZJE-UHFFFAOYSA-N benzene-1,2,4-triamine Chemical compound NC1=CC=C(N)C(N)=C1 JSYBAZQQYCNZJE-UHFFFAOYSA-N 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- QUDWYFHPNIMBFC-UHFFFAOYSA-N bis(prop-2-enyl) benzene-1,2-dicarboxylate Chemical compound C=CCOC(=O)C1=CC=CC=C1C(=O)OCC=C QUDWYFHPNIMBFC-UHFFFAOYSA-N 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 125000000609 carbazolyl group Chemical class C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 229940125898 compound 5 Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000003707 hexyloxy group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])O* 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229940097275 indigo Drugs 0.000 description 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 150000002475 indoles Chemical class 0.000 description 1
- SNHMUERNLJLMHN-UHFFFAOYSA-N iodobenzene Chemical compound IC1=CC=CC=C1 SNHMUERNLJLMHN-UHFFFAOYSA-N 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- CUONGYYJJVDODC-UHFFFAOYSA-N malononitrile Chemical compound N#CCC#N CUONGYYJJVDODC-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- LAQYHRQFABOIFD-UHFFFAOYSA-N methoxyhydroquinone Natural products COC1=CC(O)=CC=C1O LAQYHRQFABOIFD-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- BYPNIFFYJHKCFO-UHFFFAOYSA-N n,n-dimethyl-4-(2-phenyl-1,3-dihydropyrazol-5-yl)aniline Chemical compound C1=CC(N(C)C)=CC=C1C1=CCN(C=2C=CC=CC=2)N1 BYPNIFFYJHKCFO-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 125000003367 polycyclic group Chemical group 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 150000003217 pyrazoles Chemical class 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical class C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 229920001909 styrene-acrylic polymer Polymers 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229940014800 succinic anhydride Drugs 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- NLDYACGHTUPAQU-UHFFFAOYSA-N tetracyanoethylene Chemical group N#CC(C#N)=C(C#N)C#N NLDYACGHTUPAQU-UHFFFAOYSA-N 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000004867 thiadiazoles Chemical class 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 150000004992 toluidines Chemical class 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical class C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
この発明は、電子写真感光体における電荷輸送材料とし
て好適なm−フェニレンジアミン系化合物及びそれを用
いた電子写真感光体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an m-phenylenediamine compound suitable as a charge transport material in an electrophotographic photoreceptor, and an electrophotographic photoreceptor using the same.
[従来の技術]
近年、複写機などの画像形成装置における電子写真感光
体として、加工性に優れ、製造コストの面で有利である
とともに、機能設計の自由度が大きい有機感光体が使用
されている。[Prior Art] In recent years, organic photoreceptors have been used as electrophotographic photoreceptors in image forming devices such as copying machines because they have excellent processability, are advantageous in terms of manufacturing costs, and have a large degree of freedom in functional design. There is.
また、電子写真感光体を用いて複写画像を形成する場合
には、カールソンプロセスが広く利用されている。カー
ルソンプロセスは、コロナ放電により感光体を均一に帯
電させる帯電工程と、帯電した感光体に原稿像を露光し
、原稿像に対応した静電潜像を形成する露光工程と、静
電潜像をトナーを含有する現像剤で現像し、トナー像を
形成する現像工程と、トナー像を紙などの基材に転写す
る転写工程と、基材に転写されたトナー像を定着させる
定着工程と、転写工程の後、感光体上に残留するトナー
を除去するクリーニング工程とを含んでいる。このカー
ルソンプロセスにおいて高品質の画像を形成するには、
電子写真感光体が帯電特性及び感光特性に優れているこ
と及び、露光後の残留電位が低いことが要求される。Further, when forming a copy image using an electrophotographic photoreceptor, the Carlson process is widely used. The Carlson process consists of a charging process in which a photoreceptor is uniformly charged by corona discharge, an exposure process in which an original image is exposed to the charged photoreceptor to form an electrostatic latent image corresponding to the original image, and an electrostatic latent image is formed in the electrostatic latent image. A development process in which a toner image is formed by developing with a developer containing toner, a transfer process in which the toner image is transferred to a base material such as paper, a fixing process in which the toner image transferred to the base material is fixed, and a transfer process. After the process, a cleaning process is included to remove toner remaining on the photoreceptor. To form high quality images in this Carlson process,
Electrophotographic photoreceptors are required to have excellent charging characteristics and photosensitive characteristics, and to have a low residual potential after exposure.
これらの特性を達成するための手段の一つとして適正な
電荷輸送材料の選択がある。そして上記電荷輸送材料と
してポリビニルカルバゾール、オキサジアゾール系化合
物、ピラゾリン系化合物、ヒドラゾン系化合物など多く
の化合物が提案されている。One of the means to achieve these properties is the selection of appropriate charge transport materials. Many compounds such as polyvinylcarbazole, oxadiazole compounds, pyrazoline compounds, and hydrazone compounds have been proposed as the charge transport material.
[発明が解決しようとする課8]
しかし、上記電荷輸送材料は、電荷輸送能を示すドリフ
ト移動度が比較的小さい。また、ドリフト移動度の電界
強度依存性が大きいために、低電界での電荷の移動が少
なく、残留電位がぬけにくくいという問題点がある。さ
らに紫外光線の照射により劣化しやすいなどの問題点が
ある。[Problem 8 to be Solved by the Invention] However, the charge transport material described above has a relatively low drift mobility indicating charge transport ability. Further, since drift mobility has a large dependence on electric field strength, there is a problem that charge movement is small in a low electric field and residual potential is difficult to escape. Furthermore, there are problems such as easy deterioration due to irradiation with ultraviolet light.
このような問題点に対して、ドリフト移動度の電界依存
性が小さく、樹脂との相溶性のよいm =フェニレンジ
アミン系化合物としてN、N、NN“−テトラフェニル
−1,3−フェニレンジアミンが提案されている(特願
昭62−301703号)。このm−フェニレンジアミ
ン系化合物は紫外光などに対する耐光性も良好で、実際
の複写機で使用した場合にも安定な特性を示す。しかし
、複写機が故障した場合などにおいて、長時間の光暴露
や高温下での光暴露が発生した場合、回復が不可能なダ
メージを被るという問題点がある。To solve these problems, N,N,NN''-tetraphenyl-1,3-phenylenediamine is an m=phenylenediamine-based compound that has low dependence of drift mobility on electric field and good compatibility with resin. has been proposed (Japanese Patent Application No. 62-301703).This m-phenylenediamine compound has good light resistance against ultraviolet light and exhibits stable characteristics even when used in an actual copying machine.However, When a copying machine breaks down and is exposed to light for a long time or at high temperatures, there is a problem in that irreparable damage occurs.
この発明は上記の問題点を解決するものであり、より耐
光性を有し光安定性に優れたm−フェニレンジアミン系
化合物とそれを用いた電子写真感光体を提供することを
目的とする。The present invention is intended to solve the above-mentioned problems, and aims to provide an m-phenylenediamine compound that has better light resistance and excellent photostability, and an electrophotographic photoreceptor using the same.
E課題を解決するための手段及び作用コ一般に光劣化に
よる感光体特性の低下の原因は、電荷輸送材料に対して
トラップとなる不純物が感光体中に生成することにある
。m−フェニレンジアミン系化合物の場合、このような
光劣化反応として中心ベンゼン環と他のフェニル基との
間で起こる閉環反応が考えられる。この反応はフェニレ
ンジアミン系化合物の分子の電子密度が中心ベンゼン環
に偏っているために起こりやすいと考えられる。特に中
心ベンゼン環の4.6位は電子密度が高いため、酸素な
どの酸化物質からの攻撃を受けやすい分子構造となって
いる。そこで、この部分を置換基で置換して保護するこ
とにより反応性を抑制し、安定性を向上することが可能
であると考え、種々の実験の結果、この位置をアルキル
基、アルコキシル基、アミノ基、N−[換アミノ基、ア
リル基、アリール基等所定の置換基で置換することによ
り、ドリフト移動度等の電荷輸送特性を損なうことなく
、感光体の光安定性を効果的に改善できることを見出し
た。E Means and Actions for Solving Problems In general, the cause of deterioration of photoreceptor characteristics due to photodeterioration is the formation of impurities in the photoreceptor that act as traps for the charge transport material. In the case of m-phenylenediamine-based compounds, a ring-closing reaction occurring between the central benzene ring and other phenyl groups can be considered as such a photodegradation reaction. This reaction is thought to occur more easily because the electron density of the phenylenediamine compound molecule is biased towards the central benzene ring. In particular, the 4.6-position of the central benzene ring has a high electron density, making the molecular structure susceptible to attacks from oxidizing substances such as oxygen. Therefore, we thought that it is possible to suppress reactivity and improve stability by substituting and protecting this part with a substituent, and as a result of various experiments, we found that this position could be replaced with an alkyl group, an alkoxyl group, or an amino group. By substituting with a predetermined substituent such as a group, an N-[substituted amino group, an allyl group, or an aryl group, the photostability of the photoreceptor can be effectively improved without impairing charge transport properties such as drift mobility. I found out.
しかして、この発明のm−フェニレンジアミン系化合物
は
下記の一般式[■] :
(式中、RI R2、R3、R4は同一または異なっ
て、アルキル基、アルコキシル基、ハロゲン原子、アミ
ノ基、N−置換アミノ基を示し、J、m、o、pは同一
または異なって、0〜5の整数を示し R5R6は同一
または異なって、アルキル基、アルコキシル基、ハロゲ
ン原子、アミノ基、N−置換アミノ基、アリル基、アリ
ール基を示し、q、rは0または1を示す。ただし、q
。Therefore, the m-phenylenediamine compound of the present invention has the following general formula [■]: - represents a substituted amino group, J, m, o, p are the same or different and represent an integer of 0 to 5; R5R6 is the same or different and represents an alkyl group, an alkoxyl group, a halogen atom, an amino group, an N-substituted amino group, allyl group, aryl group, and q and r represent 0 or 1. However, q
.
rは同時に0であってはならない。) で表されるm−フユニレンジアミン系化合物である。r must not be 0 at the same time. ) It is a m-fuynylenediamine type compound represented by
前記m−フェニレンジアミン系化合物は中心ベンゼン環
の4.6の位置の少なくとも一方が置換基(アルキル基
、アルコキシル基、ハロゲン原子、アミノ基、N−置換
アミノ基、アリル基、アリール基)で保護されたことに
より、酸化物質などからの攻撃を受けにくくなり、光劣
化反応が著しく抑制されて光に対する安定性が向上する
。In the m-phenylenediamine compound, at least one of the 4.6 positions of the central benzene ring is protected with a substituent (alkyl group, alkoxyl group, halogen atom, amino group, N-substituted amino group, allyl group, aryl group). This makes it less susceptible to attack from oxidizing substances, significantly suppresses photodegradation reactions, and improves stability against light.
また、上記m−フェニレンジアミン系化合物を含有する
感光体は、長時間の光暴露や高温下での光暴露に対して
、従来の感光体よりダメージを被ることが少なく、光安
定性に優れている。In addition, the photoreceptor containing the m-phenylenediamine compound suffers less damage than conventional photoreceptors when exposed to light for long periods of time or at high temperatures, and has excellent photostability. There is.
[発明の好適態様]
前記一般式[Nで表されるこの発明のm−)ユニレンジ
アミン系化合物において、R’ 、R’R3R4のうち
アルキル基としては、メチル基。[Preferred Embodiment of the Invention] In the m-)unilenediamine compound of the present invention represented by the general formula [N], the alkyl group among R' and R'R3R4 is a methyl group.
エチル基、プロピル基、イソプロプル基、ブチル基、イ
ソブチル基、tert−ブチル基、ペンチル基、ヘキシ
ル基等の炭素数1〜6の低級アルキル基が例示される。Examples include lower alkyl groups having 1 to 6 carbon atoms such as ethyl group, propyl group, isopropyl group, butyl group, isobutyl group, tert-butyl group, pentyl group, and hexyl group.
アルコキシ基としては、メトキシ基、エトキシ基、プロ
ポキシ基、イソプロポキシ基、ペンチルオキシ基、ヘキ
シルオキシ基などのアルキル部分の炭素数か1〜6の低
級アルコキシ基が例示される。Examples of the alkoxy group include lower alkoxy groups having 1 to 6 carbon atoms in the alkyl moiety, such as methoxy, ethoxy, propoxy, isopropoxy, pentyloxy, and hexyloxy groups.
なお、上記R1、R2、R3、R4は同一てあってもよ
く、互いに異なっていてもよい。Note that R1, R2, R3, and R4 may be the same or different from each other.
また、R5、R’としては、アルキル基、アルコキシル
基、ハロゲン原子、アミノ基、N−置換アミノ基、アリ
ル基、アリール基が好適である。Moreover, as R5 and R', an alkyl group, an alkoxyl group, a halogen atom, an amino group, an N-substituted amino group, an allyl group, and an aryl group are suitable.
上記Rs、Rhはそれぞれ同一であってもよく、互いに
異なっていてもよい。また、Rs、Rhについては、少
なくとも一方が置換することが必要であり、両者とも置
換したものがより好ましい。The above Rs and Rh may be the same or different from each other. Furthermore, it is necessary that at least one of Rs and Rh be substituted, and it is more preferable that both are substituted.
一般式[I]で表されるm−フユニレンジアミン系化合
物としては、具体的には次のような化合物が例示される
。Specific examples of the m-fuynylenediamine compound represented by the general formula [I] include the following compounds.
本発明の上記−数式[11で表される化合物は、種々の
方法で合成することができるが、例えば、下記の一連の
反応式[A]あるいは反応式[B]により合成すること
ができる。The compound represented by the above formula [11] of the present invention can be synthesized by various methods, and for example, can be synthesized by the following series of reaction formulas [A] or reaction formula [B].
反応式[A] :
(以下余白)
反応式[B] :
■
c式中、R”およびR”は、同一または異なって、アル
キル基、アルコキシ基、ハロゲン原子、アミノ基、N−
置換アミノ基を示す。コ
すなわち、上記[A]の反応工程においては、式(1)
で表されるレソルシノール誘導体と式(2)で表される
アニリン誘導体をヨウ素とともに窒素気流下で還流して
反応させ、上記式(3)で表されるフェニレンジアミン
系化合物を得る。そして、上記の式G)の化合物と上記
式(4)で表わされるヨードベンゼン誘導体を炭酸カリ
ウムおよび銅粉の存在下で溶剤(例えば、ニトロベンゼ
ン)中で反応させることにより、一般式[I]における
R2とR4R1とR3とがそれぞれ同一である本発明の
m−フェニレンジアミン系化合物が得られる。Reaction formula [A]: (blank below) Reaction formula [B]: ■ In formula c, R" and R" are the same or different and represent an alkyl group, an alkoxy group, a halogen atom, an amino group, an N-
Indicates a substituted amino group. That is, in the reaction step [A] above, formula (1)
The resorcinol derivative represented by the formula (2) and the aniline derivative represented by the formula (2) are refluxed and reacted together with iodine under a nitrogen stream to obtain a phenylenediamine compound represented by the above formula (3). Then, by reacting the compound of the above formula G) with the iodobenzene derivative represented by the above formula (4) in a solvent (for example, nitrobenzene) in the presence of potassium carbonate and copper powder, The m-phenylenediamine compound of the present invention in which R2 and R4 are the same as R1 and R3 is obtained.
ここで、一般式[I]で表される化合物における、アル
キル基等の置換基R5,R6は上述のように、例えば、
レソルシノールに予め導入しておくことが可能であり、
R″ (すなわち、一般式[1]におけるR2 、 R
4)はアニリンに予め導入し、さらに、置換基R”
(すなわち、一般式[I]におけるR1.R3)はヨー
ドベンゼンに予め導入しておくことができる。Here, substituents R5 and R6 such as alkyl groups in the compound represented by general formula [I] are as described above, for example,
It is possible to introduce resorcinol in advance,
R'' (i.e., R2 in general formula [1], R
4) is introduced into aniline in advance, and furthermore, the substituent R”
(That is, R1.R3 in general formula [I]) can be introduced into iodobenzene in advance.
一方、上記反応式[B]に示すように、式(5)のフェ
ニレンジアミン誘導体と式(6)のヨードベンゼン誘導
体を炭酸カリウム、銅粉ともに溶剤(例えば、ニトロベ
ンゼン)中で還流して反応させることによって、一般式
[1]におけるR1−R4が全て同一置換基である本発
明のm−フェニレンジアミン系化合物を合成することが
できる。On the other hand, as shown in the above reaction formula [B], the phenylenediamine derivative of formula (5) and the iodobenzene derivative of formula (6) are reacted by refluxing both potassium carbonate and copper powder in a solvent (for example, nitrobenzene). By doing so, it is possible to synthesize the m-phenylenediamine compound of the present invention in which R1 to R4 in general formula [1] are all the same substituents.
また、上記反応式[A]または[B]で得られる化合物
以外の本発明化合物、例えばR1−R4が全て異なる置
換基である化合物等を合成するには、上記反応式[A]
または[B]における出発原料のモル比を適宜調製して
、段階的に置換基R1〜R4を有する各フェニル基を導
入する方法があげられる。また、置換基を有しないフェ
ニル基を導入した後、置換基R1〜R4R5およびR6
を順次導入するようにしてもよい。In addition, in order to synthesize a compound of the present invention other than the compound obtained by the above reaction formula [A] or [B], for example, a compound in which R1 to R4 are all different substituents, the above reaction formula [A]
Alternatively, a method may be mentioned in which the molar ratio of the starting materials in [B] is appropriately adjusted and each phenyl group having substituents R1 to R4 is introduced stepwise. Furthermore, after introducing a phenyl group having no substituents, substituents R1 to R4R5 and R6
may be introduced sequentially.
この発明の前記一般式[I]で表される化合物は、公知
の他の電荷輸送材料と組み合わせて使用することができ
る。この場合の電荷輸送材料としては、公知の種々の電
子吸引性化合物、電子供与性化合物を用いることができ
る。The compound represented by the general formula [I] of this invention can be used in combination with other known charge transport materials. As the charge transport material in this case, various known electron-withdrawing compounds and electron-donating compounds can be used.
上記電子吸引性化合物としては、例えば、2゜6−シメ
チルー2°、6°−ジtert−ジブチルジフェノキノ
ン等のジフエノギノン誘導体、マロノニトリル、チオビ
ラン系化合物、テトラシアノエチレン、2.4.8−ト
リニドロチオキサントン、3,4,5.7−テトラニト
ロ−9−フルオレノン、ジニトロベンゼン、ジニトロア
ントラセン、ジニトロアクリジン、ニトロアントラキノ
ン、ジニトロアントラキノン、無水コハク酸、無水マレ
イン酸、ジブロモ無水マレイン酸等が例示される。Examples of the electron-withdrawing compound include diphenoginone derivatives such as 2°6-dimethyl-2°,6°-ditert-dibutyldiphenoquinone, malononitrile, thiobilane compounds, tetracyanoethylene, 2.4.8-trini Examples include drothioxanthone, 3,4,5.7-tetranitro-9-fluorenone, dinitrobenzene, dinitroanthracene, dinitroacridine, nitroanthraquinone, dinitroanthraquinone, succinic anhydride, maleic anhydride, dibromomaleic anhydride, and the like.
また、電子供与性化合物としては、2.5−ジ(4−メ
チルアミノフェニル)、1,3.4−オキサジアゾール
、等のオキサジアゾール化合物、9−(4−ジエチルア
ミノスチリル)アントラセン等のスチリル化合物、ポリ
ビニルカルバゾール等のカルバゾール化合物、1−フェ
ニル−3〜(p−ジメチルアミノフェニル)ピラゾリン
等のピラゾリン化合物、ヒドラゾン化合物、トリフェニ
ルアミン系化合物、インドール系化合物、オキサゾール
系化合物、インオキサゾール系化合物、チアゾール系化
合物、チアジアゾール系化合物、イミダゾール系化合物
、ピラゾール系化合物、トリアゾール系化合物等の含窒
素環式化合物、縮合多環式化合物が例示される。Examples of electron-donating compounds include oxadiazole compounds such as 2.5-di(4-methylaminophenyl) and 1,3.4-oxadiazole, and 9-(4-diethylaminostyryl)anthracene. Styryl compounds, carbazole compounds such as polyvinylcarbazole, pyrazoline compounds such as 1-phenyl-3-(p-dimethylaminophenyl)pyrazoline, hydrazone compounds, triphenylamine compounds, indole compounds, oxazole compounds, inoxazole compounds Examples include nitrogen-containing cyclic compounds such as , thiazole compounds, thiadiazole compounds, imidazole compounds, pyrazole compounds, and triazole compounds, and fused polycyclic compounds.
これらの電荷輸送材料は、1種または2種以上混合して
用いられる。なお、ポリビニルカルバゾール等成膜性を
有する電荷輸送材料を用いる場合には、結合剤樹脂は必
ずしも必要ではない。These charge transport materials may be used alone or in combination of two or more. Note that when using a charge transporting material having film-forming properties such as polyvinylcarbazole, a binder resin is not necessarily required.
上記−数式CI]で表される化合物は、いわゆる単層型
及び積層型の電子写真感光体のいずれにも適用すること
ができる。The compound represented by the above formula CI] can be applied to both so-called single layer type and laminated type electrophotographic photoreceptors.
単層型電子写真感光体とするには、電荷輸送材料である
前記−数式[1]で表される化合物と電荷発生材料と結
合剤樹脂等とを含有する感光層を導電性基材上に形成す
ればよい。In order to obtain a single-layer type electrophotographic photoreceptor, a photosensitive layer containing a charge transporting material represented by the above formula [1], a charge generating material, a binder resin, etc. is placed on a conductive substrate. Just form it.
また、積層型の電子写真感光体とするには、導電性基材
上に、蒸着または、塗布等の手段により電荷発生材料を
含有する電荷発生層を形成し、この電荷発生層上に、前
記−数式[1]で表される化合物と結合材樹脂とを含有
する電荷輸送層を形成すればよい。また、上記とは逆に
、導電性基村上に上記と同様の電荷輸送層を形成し、次
いて蒸着または塗布などの手段により電荷発生材料゛を
含有する電荷発生層を形成してもよい。さらに、電荷発
生層を電荷発生材料と電荷輸送材料とを結着剤樹脂中に
分散して塗布することにより形成してもよい。In addition, in order to obtain a laminated electrophotographic photoreceptor, a charge generation layer containing a charge generation material is formed on a conductive substrate by means such as vapor deposition or coating, and the charge generation layer is coated with the charge generation material. - A charge transport layer containing a compound represented by formula [1] and a binder resin may be formed. Further, contrary to the above, a charge transport layer similar to the above may be formed on the conductive substrate, and then a charge generation layer containing a charge generation material may be formed by means such as vapor deposition or coating. Furthermore, the charge generation layer may be formed by coating a charge generation material and a charge transport material dispersed in a binder resin.
上記電荷発生材料としては、例えば、セレン、セレン−
テルル、アモルファスシリコン、ピリリウム塩、アゾ系
顔料、ジスアゾ系顔料、アンサンスロン系顔料、フタロ
シアニン系顔料、インジゴ系顔料、トリフェニルメタン
系顔料、スレン系顔料、トルイジン系顔料、ピラゾリン
系顔料、ペリレン系顔料、キナクリドン系顔料、ピロー
ル系顔料等が例示され、所望の領域に吸収波長域を有す
るように、一種または2種以上を混合して用いられる。Examples of the charge generating material include selenium, selenium-
Tellurium, amorphous silicon, pyrylium salt, azo pigment, disazo pigment, anthanthrone pigment, phthalocyanine pigment, indigo pigment, triphenylmethane pigment, threne pigment, toluidine pigment, pyrazoline pigment, perylene pigment , quinacridone pigments, pyrrole pigments, and the like, which may be used singly or in combination of two or more so as to have an absorption wavelength range in a desired region.
また、上記感光層、電荷発生層及び電荷輸送層における
結合剤樹脂としては、種々の樹脂を使用することかでき
る。例えば、スチレン系重合体、スチレン−ブタジェン
共重合体、スチレン−アクリロニトリル共重合体、スチ
レン−マレイン酸共重合体、アクリル系重合体、スチレ
ン−アクリル系共重合体、ポリエチレン、エチレン酢酸
ビニル共重合体、塩素化ポリエチレン、ポリ塩化ビニル
、ポリプロピレン、塩化ビニル−酢酸ビニル共重合体、
ポリエステル、アルキッド樹脂、ポリアミド、ポリウレ
タン、ポリカーボネート、ボリアリレート、ポリスルホ
ン、ジアリルフタレート樹脂、ケトン樹脂、ポリビニル
ブチラール樹脂、ポリエーテル樹脂等の熱可塑性樹脂や
、シリコーン樹脂、エポキシ樹脂、フェノール樹脂、尿
素樹脂、メラミン樹脂、その他架橋性の熱硬化性樹脂、
及びエポキシアクリレート、ウレタン−アクリレート等
の光硬化性樹脂等積々の重合体が例示される。これらの
結着剤樹脂は1種でまたは2種以上混合して用いられる
。Furthermore, various resins can be used as the binder resin in the photosensitive layer, charge generation layer, and charge transport layer. For example, styrene polymers, styrene-butadiene copolymers, styrene-acrylonitrile copolymers, styrene-maleic acid copolymers, acrylic polymers, styrene-acrylic copolymers, polyethylene, ethylene-vinyl acetate copolymers. , chlorinated polyethylene, polyvinyl chloride, polypropylene, vinyl chloride-vinyl acetate copolymer,
Thermoplastic resins such as polyester, alkyd resin, polyamide, polyurethane, polycarbonate, polyarylate, polysulfone, diallyl phthalate resin, ketone resin, polyvinyl butyral resin, polyether resin, silicone resin, epoxy resin, phenol resin, urea resin, melamine resins, other crosslinkable thermosetting resins,
and photocurable resins such as epoxy acrylate and urethane acrylate. These binder resins may be used alone or in combination of two or more.
また、塗布手法により電荷発生層及び電荷輸送層を形成
する場合には溶剤が使用される。この溶剤としては、種
々の有機溶剤を使用することが可能であり、メタノール
、エタノール、イソプロパツール、ブタノール等のアル
コール類、n−へキサン、オクタン、シクロヘキサン等
の脂肪族系・炭化水素、ベンゼン、トルエン、キシレン
等の芳香族炭化水素、ジクロロメタン、ジクロロエタン
、四塩化炭素、クロロベンゼン等のハロゲン化炭化水素
、ジメチルエーテル、ジエチルエーテル、テトラヒドロ
フラン、エチレングリコールジメチルエーテル、ジエチ
レングリコールジメチルエーテル等のエーテル類、アセ
トン、メチルエチルケトン、シクロヘキサノン等のケト
ン類、酢酸エチル、酢酸メチル等のエステル類、ジメチ
ルホルムアルデヒド、ジメチルホルムアミド、ジメチル
スルホキシド等の種々の溶剤が例示され、これらを1種
または2種以上混合して用いることができる。Further, a solvent is used when forming the charge generation layer and the charge transport layer by a coating method. Various organic solvents can be used as this solvent, including alcohols such as methanol, ethanol, isopropanol, butanol, aliphatic/hydrocarbons such as n-hexane, octane, and cyclohexane, and benzene. , aromatic hydrocarbons such as toluene and xylene, halogenated hydrocarbons such as dichloromethane, dichloroethane, carbon tetrachloride, and chlorobenzene, ethers such as dimethyl ether, diethyl ether, tetrahydrofuran, ethylene glycol dimethyl ether, and diethylene glycol dimethyl ether, acetone, methyl ethyl ketone, and cyclohexanone. Examples include ketones such as ethyl acetate, esters such as methyl acetate, dimethyl formaldehyde, dimethyl formamide, dimethyl sulfoxide, etc., and these solvents may be used alone or in combination of two or more.
また、上記電荷発生層の感度をよくするために、例えば
、ターフェニル、ハロナフトキノン類、アセナフチレン
等の公知の増感剤を上記電荷発生材料と共に用いてもよ
い。さらには、電衛輸送材料や電荷発生材料の分散性、
染工性等をよくするために界面活性剤、レベリング剤等
を使用してもよい。Further, in order to improve the sensitivity of the charge generation layer, a known sensitizer such as terphenyl, halonaphthoquinones, acenaphthylene, etc. may be used together with the charge generation material. Furthermore, the dispersibility of electrical transport materials and charge generating materials,
Surfactants, leveling agents, etc. may be used to improve dyeability.
上記導電性基材としては、導電性を有する種々の材料を
使用することができ、例えば、アルミニウム、銅、スズ
、白金、金、銀、バナジウム、モリブデン、クロム、カ
ドミウム、チタン、ニッケル、パラジウム、インジウム
、ステンレス銅、真鍮等の金属単体や、上記金属が蒸着
またはラミネートされたプラスチック材料、ヨウ化アル
ミニウム、酸化スズ、酸化インジウム等で被覆されたガ
ラス等が例示される。上記導電性基材はシート状、ドラ
ム状のいずれでもよく、基材自体が導電性を有するかあ
るいは基材の表面が導電性を有していればよい。この基
材としては、使用に際し、十分な機械的強度を有するも
のが好ましい。As the conductive base material, various conductive materials can be used, such as aluminum, copper, tin, platinum, gold, silver, vanadium, molybdenum, chromium, cadmium, titanium, nickel, palladium, Examples include simple metals such as indium, stainless copper, and brass, plastic materials on which the above metals are vapor-deposited or laminated, and glass coated with aluminum iodide, tin oxide, indium oxide, and the like. The above-mentioned conductive base material may be in the form of a sheet or a drum, as long as the base material itself has conductivity or the surface of the base material has conductivity. The base material preferably has sufficient mechanical strength during use.
上記電荷輸送材料としてのこの発明の化合物と結着剤樹
脂は、電荷の輸送を阻害しない範囲及び結晶化しない範
囲で種々の割合で使用することが可能であるが、結合剤
樹脂100重量部に対して、−前記一般式[I]で表さ
れる化合物125重量部ないし200重量部を使用する
ことか好ましい。The compound of the present invention as the charge transporting material and the binder resin can be used in various proportions within the range that does not inhibit charge transport and does not cause crystallization. On the other hand, it is preferable to use 125 parts by weight to 200 parts by weight of the compound represented by the general formula [I].
また、一般式[1]で表される化合物を含有する電荷輸
送層は、2〜100μm1特に5〜30μm程度の層厚
に形成することか好ましい。Further, the charge transport layer containing the compound represented by the general formula [1] is preferably formed to have a layer thickness of about 2 to 100 μm, particularly about 5 to 30 μm.
上記電荷発生材料を結合剤樹脂と共に用いる場合、電荷
発生材料と結合剤樹脂とは種々の割合で使用することが
できるが、電荷発生材料10重量部に対して、結合剤樹
脂1〜150重量部の割合で用いることが望ましい。When the charge generating material described above is used together with a binder resin, the charge generating material and the binder resin can be used in various ratios, but from 1 to 150 parts by weight of the binder resin per 10 parts by weight of the charge generating material. It is desirable to use the ratio of
また、上記電荷発生材料を含有する電荷発生層は、その
膜厚を任意に選択することかできるが、0.01〜20
μm1特に0.1〜10μm程度に形成することが望ま
しい。また、一般式[1]で表される化合物及び電荷発
生材料を単一層中に存在させた単層型感光層は、その膜
厚を任意に選択することができるが、2〜100u@、
特に5〜30μm程度の層厚に形成することか好ましい
。Further, the thickness of the charge generation layer containing the above charge generation material can be arbitrarily selected, but the thickness is 0.01 to 20.
It is desirable to form the layer to a thickness of approximately 0.1 to 10 μm. Furthermore, the thickness of the single-layer type photosensitive layer in which the compound represented by the general formula [1] and the charge-generating material are present in a single layer can be arbitrarily selected;
In particular, it is preferable to form the layer to a thickness of about 5 to 30 μm.
また、単層型電子写真用感光体にあっては、上記基材と
感光層との間に、また、積層型電子写真用感光体にあっ
ては、上記基材と電荷発生層との間や基材と電荷輸送層
との間及び電荷発生層と電荷輸送層との間に、感光体の
特性を阻害しない範囲でバリア層が形成されていてもよ
く、感光体の表面には、保護層が形成されていてもよい
。In addition, in a single-layer electrophotographic photoreceptor, between the base material and the photosensitive layer, and in a laminated electrophotographic photoreceptor, between the base material and the charge generation layer. A barrier layer may be formed between the base material and the charge transport layer, and between the charge generation layer and the charge transport layer, as long as it does not impede the characteristics of the photoreceptor. A layer may be formed.
上記電荷発生層及び電荷輸送層を、塗布の方法により形
成する場合には、電荷発生材料等と結合剤樹脂などを公
知の方法、例えば、ロールミル、ボールミル、アトライ
タ、ペイントシェーカーあるいは超音波分散器等を用い
て分散混合して調製し、これを公知の手段により塗布、
乾燥すればよい。なお上述のように、電荷発生層は上記
電荷発生材料を蒸着することにより形成してもよい。When the charge generation layer and charge transport layer are formed by coating, the charge generation material and the binder resin are mixed using a known method such as a roll mill, ball mill, attritor, paint shaker, or ultrasonic disperser. Prepare by dispersing and mixing using
Just dry it. Note that, as described above, the charge generation layer may be formed by vapor depositing the charge generation material.
以下、実施例により本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail with reference to Examples.
[実施例]
(1) 電荷輸送材料の合成例
第1の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4,6−ジクロロ−1,3−フェニレンジアミンの合成
)
4.6−シクロロレソルシノール15.7gとm−)ル
イジン22.6gとをヨウ素0.5gの存在下、窒素気
流中で3日間還流して反応させ、N、N’−ビス(3−
トリル)−4,6−ジクロロ−1,3−フェニレンジア
ミンを得た。次に、このN、N’ −ビス(3−トリル
)−4,6−ジクロロ−1,3−フェニレンジアミン9
.0gとヨードトルエン10.9gとを、炭酸カリウム
5゜0g、銅粉末1.5gの存在下、ニトロベンゼン1
00m層中で24時間還流して反応させ、標記の化合物
N、N、N’ 、N’−テトラキス(3−トリル)−4
,6−ジクロロ−1,3−フェニレンジアミン(本発明
化合物l)を得た。上記の合成工程における反応は前述
の一連の反応式[A)に準じた。[Example] (1) Synthesis example of charge transport material First synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4,6-dichloro-1,3-phenylenediamine) 15.7 g of 4.6-dichlororesorcinol and 22.6 g of m-)luidine were combined in the presence of 0.5 g of iodine in a nitrogen stream for 3 days. The reaction was carried out under reflux to form N,N'-bis(3-
Tolyl)-4,6-dichloro-1,3-phenylenediamine was obtained. Next, this N,N'-bis(3-tolyl)-4,6-dichloro-1,3-phenylenediamine 9
.. In the presence of 5.0 g of potassium carbonate and 1.5 g of copper powder, 1.0 g of nitrobenzene and 10.9 g of iodotoluene were added.
The reaction was carried out under reflux for 24 hours in the 00m layer to form the title compound N,N,N',N'-tetrakis(3-tolyl)-4.
,6-dichloro-1,3-phenylenediamine (compound 1 of the present invention) was obtained. The reactions in the above synthesis steps were based on the series of reaction formulas [A] described above.
この化合物の融点は110−111”Cてあった。The melting point of this compound was 110-111''C.
第2の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4−メチル−1,3−フェニレンジアミンの合成)
標記の化合物を前述の一連の反応式[B]に準じて合成
した。Second synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4-methyl-1,3-phenylenediamine) The title compound was synthesized according to the series of reaction formulas [B] described above.
4−メチルフェニレンジアミン3.1gとm−ヨードト
ルエン21.8gとを、炭酸カリウ広6゜9g、銅粉末
1.5gの存在下、ニトロベンゼン100mJ中、て2
4時間還流して反応させ、標記の化合物N、N、N’
、N’−テトラキス(3−トリル)−4−メチル−1,
3−フェニレンジアミン(本発明化合物2)を得た。3.1 g of 4-methylphenylenediamine and 21.8 g of m-iodotoluene were dissolved in 100 mJ of nitrobenzene in the presence of 6.9 g of potassium carbonate and 1.5 g of copper powder.
The reaction was carried out under reflux for 4 hours, and the title compound N, N, N'
, N'-tetrakis(3-tolyl)-4-methyl-1,
3-phenylenediamine (invention compound 2) was obtained.
この化合物の融点は90〜92℃であった。The melting point of this compound was 90-92°C.
第3の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4−メトキシ−1,3−フェニレンジアミンの合成)
上記第1の合成例の4,6−シクロロレソルシノールの
代わりに4−メトキシレソルシノール12.3gを用い
て上記第1の合成例と同様にして、N、N’−ビス(3
−トリル)−4−メトキシ−1,3−フェニレンジアミ
ンを得た。このN。Third synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4-methoxy-1,3-phenylenediamine) Same as in the first synthesis example above using 12.3 g of 4-methoxyresorcinol instead of 4,6-cycloresorcinol in the first synthesis example above. , N, N'-bis(3
-Tolyl)-4-methoxy-1,3-phenylenediamine was obtained. This N.
No−ビス(3−トリル)−4−メトキシ−1゜3−フ
ェニレンジアミン8.0gとヨードトルエン10.9g
とを、炭酸カリウム5.0g、銅粉末1,5gの存在下
、ニトロベンゼン50mJ中で24時間還流反応させた
。以下、第1の合成例と同様にして標記の化合物N、N
、N’、Nテトラキス(3−トリル)−4−メトキシ−
1゜3−フェニレンジアミン(本発明化合物3)を得た
。No-bis(3-tolyl)-4-methoxy-1゜3-phenylenediamine 8.0g and iodotoluene 10.9g
were subjected to a reflux reaction for 24 hours in 50 mJ of nitrobenzene in the presence of 5.0 g of potassium carbonate and 1.5 g of copper powder. Hereinafter, in the same manner as in the first synthesis example, the title compounds N, N
,N',Ntetrakis(3-tolyl)-4-methoxy-
1°3-phenylenediamine (Compound 3 of the present invention) was obtained.
この化合物の融点は114〜115℃であった。The melting point of this compound was 114-115°C.
第4の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4−アミノ−1,3−フェニレンジアミンの合成)
上記第1の合成例の4.6−シクロロレソルシノールの
代わりに4−アミルツルシノール11゜Ogを用いて上
記第1の合成例と同様にして、NN“−ビス(3−トリ
ル)−4−アミノ−1,3フエニレンジアミンを得た。Fourth synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4-amino-1,3-phenylenediamine) Same as in the first synthesis example above, using 11°Og of 4-amylturcinol instead of 4,6-cycloresorcinol in the first synthesis example above. Then, NN"-bis(3-tolyl)-4-amino-1,3 phenylenediamine was obtained.
このN、N’ −ビス(3−トリル)−4−アミノ−1
,3−フェニレンジアミン7.6gとヨードトルエン1
0.9gとを、炭酸カリウム5.0g、銅粉末1.5g
の存在下、ニトロベンゼン50mj中で24時間還流し
て反応させた。以下、第1の合成例と同様にして標記の
化合物N、N、N” 、N’−テトラキス(3−トリル
)−6−アミノ−1,3−フェニレンジアミン(本発明
化合物4)を得た。This N,N'-bis(3-tolyl)-4-amino-1
, 7.6 g of 3-phenylenediamine and 1 iodotoluene
0.9g, potassium carbonate 5.0g, copper powder 1.5g
The reaction was carried out under reflux for 24 hours in 50 mj of nitrobenzene. Hereinafter, the title compound N,N,N",N'-tetrakis(3-tolyl)-6-amino-1,3-phenylenediamine (invention compound 4) was obtained in the same manner as in the first synthesis example. .
この化合物の融点は121〜122℃であった。The melting point of this compound was 121-122°C.
第5の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4−アリル−1,3−フェニレンジアミンの合成)
上記第1の合成例の4.6−シクロロレソルシノールの
代わりに4−アミルツルシノール13゜2gを用いて上
記第1の合成例と同様にして、N。Fifth synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4-allyl-1,3-phenylenediamine) Same as in the first synthesis example above, using 13.2 g of 4-amylturcinol instead of 4,6-cycloresorcinol in the first synthesis example above. Then, N.
No−ビス(3−トリル)−4−アリル−1,3−フェ
ニレンジアミンを得た。このN、N”−ビス(3−トリ
ル)−4−アリル−1,3−フェニレンジアミン8.2
gとヨードトルエン10.9gとを、炭酸カリウム5.
0g、銅粉末1.5gの存在下、ニトロベンゼン50m
j中で24時間還流して反応させた。以下、第1の合成
例と同様にして標記の化合物N、N、N°、N’ −テ
トラキス(3−トリル)−4−アリル−1,3−フェニ
レンジアミン(本発明化合物5)を得た。この化合物の
融点は115〜116℃であった。No-bis(3-tolyl)-4-allyl-1,3-phenylenediamine was obtained. This N,N”-bis(3-tolyl)-4-allyl-1,3-phenylenediamine 8.2
g and 10.9 g of iodotoluene, and 5.0 g of potassium carbonate.
0 g, 50 m of nitrobenzene in the presence of 1.5 g of copper powder
The reaction mixture was refluxed for 24 hours in a vacuum cleaner. Hereinafter, the title compound N,N,N°,N'-tetrakis(3-tolyl)-4-allyl-1,3-phenylenediamine (invention compound 5) was obtained in the same manner as in the first synthesis example. . The melting point of this compound was 115-116°C.
第6の合成例
(N、N、N’ 、N’−テトラキス(3−トリル)−
4−フエ壬ルー1.3−フェニレンジアミンの合成)
上記第1の合成例の4.6−シクロロレソルシノールの
代わりに4−フェニルレソルシノール16.4gを用い
て上記第1の合成例と同様にして、N、N’−ビス(3
−トリル)−4−フェニル−1,3−フェニレンジアミ
ンを得た。このN、 N−ビス(3−トリル)−4−
フェニル−1,3−フェニレンジアミン9.1gとヨー
ドトルエン10.9gとを、炭酸カリウム5.0g、銅
粉末1.5gの存在下、ニトロベンゼン50mj中で2
4時間還流して反応させた。以下、第1の合成例と同様
にして標記の化合物N、N、N’、N−テトラキス(3
−トリル)−4−フェニル−1゜3−フェニレンジアミ
ン(本発明化合物6)を得た。この化合物の融点は12
3〜124℃であった。Sixth synthesis example (N, N, N', N'-tetrakis(3-tolyl)-
Synthesis of 4-phenylresorcinol-1,3-phenylenediamine) Synthesis of the first synthesis example above using 16.4 g of 4-phenylresorcinol instead of 4,6-cycloresorcinol in the first synthesis example above. Similarly, N,N'-bis(3
-tolyl)-4-phenyl-1,3-phenylenediamine was obtained. This N, N-bis(3-tolyl)-4-
9.1 g of phenyl-1,3-phenylenediamine and 10.9 g of iodotoluene were dissolved in 50 mj of nitrobenzene in the presence of 5.0 g of potassium carbonate and 1.5 g of copper powder.
The mixture was refluxed for 4 hours to react. Hereinafter, the title compound N, N, N', N-tetrakis (3
-Tolyl)-4-phenyl-1°3-phenylenediamine (Compound 6 of the present invention) was obtained. The melting point of this compound is 12
The temperature was 3-124°C.
(2)電子写真感光体の調製
単層型電子写真感光体の調製
電荷発生材料としてN、N’−ジ(3,5−ジメチルフ
ェニル)ペリレン−3,4,9,10−テトラカルボキ
シジイミド8重量部、電荷輸送材料として上記合成例1
〜6で合成した本発明化合物100重量部、結合剤樹脂
としてポリ−(4゜4゛−シクロへキシリデンジフェニ
ル)カーボネート(三菱瓦斯化学社製、ポリカーボネー
トZ200)100重量部及び所定量のテトラヒドロフ
ランを合わせて、超音波分散器にて混合分散し、単層型
感光層用塗布液を調製した。この塗布液を外径78 m
+* X長さ340III11のアルミニウム素管上に
塗布した後、暗所にて100℃で30分間加熱乾燥させ
て、厚み24μmの単層型感光層を有するドラム型の電
子写真感光体を作成した。(2) Preparation of electrophotographic photoreceptor Preparation of single-layer electrophotographic photoreceptor N,N'-di(3,5-dimethylphenyl)perylene-3,4,9,10-tetracarboxydiimide 8 as charge generating material Part by weight, the above Synthesis Example 1 as a charge transport material
100 parts by weight of the compound of the present invention synthesized in steps 6 to 6, 100 parts by weight of poly-(4゜4゛-cyclohexylidene diphenyl) carbonate (manufactured by Mitsubishi Gas Chemical Co., Ltd., polycarbonate Z200) as a binder resin, and a predetermined amount of tetrahydrofuran. The mixtures were mixed and dispersed using an ultrasonic disperser to prepare a coating solution for a single-layer photosensitive layer. This coating liquid was applied to an outer diameter of 78 m.
+* After coating it on an aluminum tube with a length of 340III11, it was heated and dried in a dark place at 100°C for 30 minutes to create a drum-shaped electrophotographic photoreceptor having a single-layer photosensitive layer with a thickness of 24 μm. .
積層型電子写真感光体の調製
結合剤樹脂としてポリビニルブチラール(積木化学社製
、商品名工スレツクBLI)100重1部と、電荷発生
材料としてオキソチタニルフタロシアニン100重量部
と、所定量のテトラヒドロフランとをボールミルに仕込
み、24時間撹拌混合して電荷発生層用塗布液を調製し
、この調製液をアルミニウムドラムに浸漬法によって塗
布し、110℃で30分間熱風乾燥して硬化させること
により膜厚0.5μmの電荷発生層を形成した。Preparation of Laminated Electrophotographic Photoreceptor 100 parts by weight of polyvinyl butyral (manufactured by Miki Kagaku Co., Ltd., trade name: Sletsku BLI) as a binder resin, 100 parts by weight of oxotitanylphthalocyanine as a charge generating material, and a predetermined amount of tetrahydrofuran were mixed in a ball mill. A coating liquid for the charge generation layer is prepared by stirring and mixing for 24 hours, and this prepared liquid is applied to an aluminum drum by the dipping method, and is cured by drying with hot air at 110°C for 30 minutes to obtain a film thickness of 0.5 μm. A charge generation layer was formed.
次いで、結合剤樹脂としてポリカーボネート樹脂(三菱
瓦斯化学社製、商品名ニーピロン)100重量部と、電
荷輸送層として上記上記合成例1〜6で合成した各化合
物100重量部と、所定量のトルエンとをホモミキサで
撹拌混合して電荷輸送層用塗布液を調製した。この塗布
液を上記電荷発生層の表面に浸・演法により塗布し、1
20℃で30分間熱風乾燥することにより膜厚的20μ
mの電荷輸送層を形成して、積層型電子写真感光体を作
成した。Next, 100 parts by weight of a polycarbonate resin (manufactured by Mitsubishi Gas Chemical Co., Ltd., trade name: Niepiron) as a binder resin, 100 parts by weight of each compound synthesized in Synthesis Examples 1 to 6 above as a charge transport layer, and a predetermined amount of toluene. were stirred and mixed using a homomixer to prepare a charge transport layer coating solution. This coating liquid was applied to the surface of the charge generation layer by dipping and drying, and 1
By drying with hot air at 20℃ for 30 minutes, the film thickness becomes 20μ.
A layered electrophotographic photoreceptor was prepared by forming a charge transport layer of m.
比較例
電荷輸送材料として(N、N、N’ 、N’−テトラキ
ス(3−トリル)−1,3−フェニレンジアミン100
重量部を用いた以外は上記調製例と同様にして単層型及
び積層型の電子写真感光体を作成した。Comparative Example As a charge transport material (N, N, N', N'-tetrakis(3-tolyl)-1,3-phenylenediamine 100
Single-layer type and laminated type electrophotographic photoreceptors were prepared in the same manner as in the above Preparation Example except that parts by weight were used.
(3)電子写真感光体の評価
単層型電子感光体
(初期表面電位V3.の測定)
上記各単層型電子写真感光体を、静電複写試験装置(ジ
エンチック社製、ジエンチックシンシア30M)に装填
し、その表面を正に帯電させて各感光体の表面電位VS
P(V)を測定した。(3) Evaluation of electrophotographic photoreceptor Single-layer electrophotographic photoreceptor (measurement of initial surface potential V3) Each of the above-mentioned single-layer electrophotographic photoreceptors was tested using an electrostatic copying tester (manufactured by Gientic Co., Ltd., Gientic Cynthia 30M). The surface potential of each photoreceptor is VS by positively charging its surface.
P(V) was measured.
(半減露光量、残留電位測定)
上記帯電状態の各電子写真感光体を、上記静電複写試験
装置の露光光源であるハロゲンランプ(露光強度0.9
2mW/cd)を用いて露光させ、表面電位VSPが1
72となるまでの時間を求めて、半減露光量El/2(
μJ/cm2)を算出した。(Measurement of half-decreased exposure amount and residual potential) Each electrophotographic photoreceptor in the above-mentioned charged state was exposed to a halogen lamp (exposure intensity 0.9
2 mW/cd), and the surface potential VSP was 1
Find the time until it reaches 72, and calculate the half-decreased exposure amount El/2 (
μJ/cm2) was calculated.
また、上記露光開始後0.15秒を経過した後の表面電
位を残留電位V、、(V)とした。Further, the surface potential after 0.15 seconds had passed after the start of the exposure was defined as the residual potential V, (V).
積層型電子写真感光体
露光光源として分光器にXeランプ光を通して得た単色
光(λ−780nm、露光強度−10μW / cd、
露光時間−1秒)を用いて各積層型電子写真感光体を露
光し、露光後0.5秒経過した後の表面電位を残留電位
V1.とじて測定した。その他については上記単層型電
子写真感光体の場合と同様の測定を行った。Monochromatic light (λ - 780 nm, exposure intensity - 10 μW/cd,
Each laminated electrophotographic photoreceptor was exposed using an exposure time of -1 second), and the surface potential after 0.5 seconds had passed after exposure was determined as residual potential V1. The measurements were taken after closing. Other measurements were carried out in the same manner as in the case of the single-layer electrophotographic photoreceptor.
上記実施例及び比較例で得られた電子写真感光体の帯電
特性及び感光特性の測定結果を表1及び表2に示す。Tables 1 and 2 show the measurement results of the charging characteristics and photosensitive characteristics of the electrophotographic photoreceptors obtained in the above Examples and Comparative Examples.
表1
(単層型電子写真感光体)
表1および表2において、「露光前」は、光照射前の初
期特性、「露光後」は白色螢光灯を用いて、400ルツ
クスの紫外線を含む白色光を40分間照射した後の特性
を示す。Table 1 (Single-layer electrophotographic photoreceptor) In Tables 1 and 2, "before exposure" refers to the initial characteristics before light irradiation, and "after exposure" refers to the initial characteristics before light irradiation, using a white fluorescent lamp, including ultraviolet rays of 400 lux. The characteristics after irradiation with white light for 40 minutes are shown.
上記表1及び2に示すように、本願発明の電荷輸送材料
用化合物を用いた感光体はいずれも、初期表面電位VS
P、半減露光量E I/2 、残留電位V1.ともに露
光前後の値の変動が比較例より小さく光に対する安定性
に優れていることが判る。As shown in Tables 1 and 2 above, all of the photoreceptors using the compound for charge transport materials of the present invention have an initial surface potential of VS
P, half-reduced exposure amount E I/2, residual potential V1. It can be seen that the fluctuations in values before and after exposure in both cases are smaller than in the comparative example, indicating excellent stability against light.
E発明の効果〕
以上のように、この発明の電荷輸送材料用化合物は中心
ベンゼン環の4.6の位置を所定の置換基で置換して保
護しているため、光安定性に優れており、かつ該電荷輸
送材料を用いることにより、光安定性に優れた電子写真
感光体を得ることができる。E. Effects of the Invention As described above, the compound for charge transport materials of the present invention has excellent photostability because the 4.6 position of the central benzene ring is protected by substitution with a predetermined substituent. , and by using the charge transport material, an electrophotographic photoreceptor with excellent photostability can be obtained.
表2 (積層型電子写真感光体)Table 2 (Laminated electrophotographic photoreceptor)
Claims (2)
異なって、アルキル基、アルコキシル基、ハロゲン原子
、アミノ基、N−置換アミノ基を示し、l、m、o、p
は同一または異なって、0〜5の整数を示し、R^5、
R^6は同一または異なって、アルキル基、アルコキシ
ル基、ハロゲン原子、アミノ基、N−置換アミノ基、ア
リル基、アリール基を示し、q、rは0または1を示す
。ただし、q、rは同時に0であってはならない。) で表されるm−フェニレンジアミン系化合物。(1) The following general formula [I]: ▲There are mathematical formulas, chemical formulas, tables, etc.▼[I] (In the formula, R^1, R^2, R^3, R^4 are the same or different, and are alkyl group, alkoxyl group, halogen atom, amino group, N-substituted amino group, l, m, o, p
are the same or different and represent integers from 0 to 5, R^5,
R6 is the same or different and represents an alkyl group, an alkoxyl group, a halogen atom, an amino group, an N-substituted amino group, an allyl group, or an aryl group, and q and r represent 0 or 1. However, q and r must not be 0 at the same time. ) A m-phenylenediamine compound represented by:
ジアミン系化合物を含む感光層を設けたこと特徴とする
電子写真感光体。(2) An electrophotographic photoreceptor, characterized in that a photosensitive layer containing the m-phenylenediamine compound according to claim 1 is provided on a conductive substrate.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2116132A JPH089577B2 (en) | 1990-05-02 | 1990-05-02 | M-phenylenediamine compound and electrophotographic photoreceptor using the same |
DE69112898T DE69112898T2 (en) | 1990-05-02 | 1991-05-02 | Meta-phenylenediamine compound and electrophotosensitive material using this compound. |
EP91107132A EP0455247B1 (en) | 1990-05-02 | 1991-05-02 | m-Phenylenediamine compound and electrophotosensitive material using said compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2116132A JPH089577B2 (en) | 1990-05-02 | 1990-05-02 | M-phenylenediamine compound and electrophotographic photoreceptor using the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH0413775A true JPH0413775A (en) | 1992-01-17 |
JPH089577B2 JPH089577B2 (en) | 1996-01-31 |
Family
ID=14679513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2116132A Expired - Lifetime JPH089577B2 (en) | 1990-05-02 | 1990-05-02 | M-phenylenediamine compound and electrophotographic photoreceptor using the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH089577B2 (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0293654A (en) * | 1988-09-30 | 1990-04-04 | Ricoh Co Ltd | Electrophotographic sensitive body |
JPH0396962A (en) * | 1989-09-08 | 1991-04-22 | Konica Corp | Electrophotographic sensitive body |
-
1990
- 1990-05-02 JP JP2116132A patent/JPH089577B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0293654A (en) * | 1988-09-30 | 1990-04-04 | Ricoh Co Ltd | Electrophotographic sensitive body |
JPH0396962A (en) * | 1989-09-08 | 1991-04-22 | Konica Corp | Electrophotographic sensitive body |
Also Published As
Publication number | Publication date |
---|---|
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