JPH04137439A - Millimeter wave generating device - Google Patents

Millimeter wave generating device

Info

Publication number
JPH04137439A
JPH04137439A JP25898490A JP25898490A JPH04137439A JP H04137439 A JPH04137439 A JP H04137439A JP 25898490 A JP25898490 A JP 25898490A JP 25898490 A JP25898490 A JP 25898490A JP H04137439 A JPH04137439 A JP H04137439A
Authority
JP
Japan
Prior art keywords
electron beam
electrode
electron
electron beams
millimeter wave
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25898490A
Other languages
Japanese (ja)
Inventor
Takashi Shimotsuma
下妻 隆
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP25898490A priority Critical patent/JPH04137439A/en
Publication of JPH04137439A publication Critical patent/JPH04137439A/en
Pending legal-status Critical Current

Links

Landscapes

  • Microwave Tubes (AREA)

Abstract

PURPOSE:To set electron beams at the position of the largest oscillation efficiency without their collision against the circuit wall even in the operation of a high order mode and a large current operation by planting an electrode on the inner surface of a beam tunnel through an insulator. CONSTITUTION:On the inner surface of a beam tunnel 14 to lead the electron beams injected by an electron gun 1 to a high-frequency resonance circuit 3, an electrode 15 is planted through an insulator 16. As a result, when the central axis of the electron beams 2 is slipped from the tube axis, a current to indicate the slippage flows to the electrode 15. Consequently, the passing position of the electron beams 2 can be set at the position to make the oscillation efficiency maximum without collision of electron beams 2 with the circuit wall, by deciding the direction of the slippage from the flow of the current.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、ジャイロトロン、ジャイロクライストロン
など電子サイクロトロンメーザ作用を利用したミリ波発
生装置に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a millimeter wave generation device that utilizes an electron cyclotron maser effect such as a gyrotron or gyroklystron.

〔従来の技術〕[Conventional technology]

第6図は例えば特開昭56−102045号公報に示さ
れ九従来のミリ波発生装置を示す断面図であシ、図にお
いて、1は磁場に中空状電子ビーム(以下、電子ビーム
という)2を射出する電子銃、3は電子銃1のカソード
部、4・5は第1および第2のアノード部、6・7は磁
場を発生して電子ビーム2の電子に旋回運動を起こさせ
ることにより、その電子ビーム2の垂直方向速度を加速
する電子銃部ソレノイドおよび主ソレノイド、8は電子
ビーム2を高周波共振回路10へ導くビームトンネル部
、9はカットオフ部、10は電子ビーム2に微弱な高周
波を与えて共振を起こさせることによりミリ波を発生さ
せる高周波共振回路、11は電子ビーム2を回収するコ
レクタ電極部、12は高周波共振回路10よす発生され
たミリ波、13はミリ波12t−回収する出力窓部であ
る。
FIG. 6 is a sectional view showing a conventional millimeter wave generator disclosed in, for example, Japanese Unexamined Patent Publication No. 56-102045. In the figure, 1 indicates a hollow electron beam (hereinafter referred to as electron beam) 2 3 is the cathode part of the electron gun 1, 4 and 5 are the first and second anode parts, and 6 and 7 are the electron gun that emits electrons by generating a magnetic field to cause the electrons of the electron beam 2 to rotate , an electron gun solenoid and a main solenoid that accelerate the vertical velocity of the electron beam 2, 8 a beam tunnel part that guides the electron beam 2 to a high frequency resonance circuit 10, 9 a cutoff part, and 10 a solenoid that is weak to the electron beam 2. A high-frequency resonant circuit that generates millimeter waves by applying a high frequency to cause resonance; 11 is a collector electrode portion that collects the electron beam 2; 12 is a millimeter wave generated by the high-frequency resonant circuit 10; 13 is a millimeter wave 12t - Output window for collection.

次に動作について説明する。電子は、カソード部3と第
1の7ノ一ド部4との間に印加された電圧と、電子銃部
ソレノイド6によって発生された磁場によりて垂直方向
速度を得てカソード部3より引き出されて電子ビーム2
1を形成し、旋回運動をしながら、第2のアノード部5
に印加された電圧によって磁場と平行方向に加速されて
、ビームトンネル部8に導入される。そして、電子と−
42は、主ソレノイド7によって発生された強力な磁場
によりて磁気圧縮されてその径を小さくし、電子の垂直
方向速度を加速されながら、平行方向速度を減少され、
高周波共振回路10に入る。そして通常円筒状空胴から
なる高周波共振回路10における固有モードと、電子サ
イクロトロンメーザ作用により共振を起こされ、その垂
直速度成分の一部をミリ波12に変換されて、コレクタ
電極部11に回収される。そして、ミリ波12は出力窓
部13より取り出される。
Next, the operation will be explained. The electrons are extracted from the cathode section 3 with vertical velocity due to the voltage applied between the cathode section 3 and the first seven-node section 4 and the magnetic field generated by the electron gun solenoid 6. electron beam 2
1, and while making a pivoting movement, the second anode part 5
The beam is accelerated in a direction parallel to the magnetic field by the voltage applied to the beam and introduced into the beam tunnel section 8. And the electron-
42 is magnetically compressed by the strong magnetic field generated by the main solenoid 7 to reduce its diameter, accelerating the vertical velocity of the electrons while decreasing the parallel velocity.
It enters the high frequency resonant circuit 10. Resonance is caused by the eigenmode in the high-frequency resonant circuit 10 usually consisting of a cylindrical cavity and the electron cyclotron maser action, and a part of the vertical velocity component is converted into millimeter waves 12 and collected by the collector electrode section 11. Ru. The millimeter wave 12 is then extracted from the output window section 13.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

従来のミリ波発生装置は以上のように構成されているの
で、高次モードかつ大電流で動作させた場合、発振効率
の低下を防ぎ、不要モードとの競合を避けるために、電
子ビームの通過位置を高周波共振回路の壁面の極近傍に
設定しなければならず、管製作上での組立精度の悪さや
、主ソレノイドの磁気軸のずれなどによシ、しばしば電
子ビームが回路壁に衝突し損傷を起こすという課題があ
った。
Conventional millimeter wave generators are configured as described above, so when operated in high-order modes and with large currents, the passage of the electron beam is The position must be set very close to the wall of the high-frequency resonant circuit, and due to poor assembly accuracy in tube manufacturing or misalignment of the magnetic axis of the main solenoid, the electron beam often collides with the circuit wall. There was a problem with causing damage.

この発明は上記のような課題を解消するためになされた
もので、高次モードかつ大電流動作時でも電子ビームを
回路壁に衝突することなく、最も発振効率の大きくなる
位置に設定できるようにしたミリ波発生装置を得ること
を目的とする。
This invention was made to solve the above-mentioned problems, and it is possible to set the electron beam at the position where the oscillation efficiency is highest without colliding with the circuit wall even during high-order mode and large current operation. The purpose is to obtain a millimeter wave generator with

〔課題を解決するための手段〕[Means to solve the problem]

この発明に係るミ’)波発生装置は、電子銃に射出され
た電子ビームを高周波共振回路へ導くビームトンネル部
の内周面に絶縁体を介して電極を植設したものである。
The microwave generator according to the present invention has an electrode implanted through an insulator on the inner circumferential surface of a beam tunnel portion that guides an electron beam emitted by an electron gun to a high frequency resonant circuit.

〔作用〕[Effect]

この発明におけるミリ波発生装置は、ビームトンネル部
の内周面に絶縁体を介して電極を植設したことにより、
電子ビームの中心軸が管軸とずれたとき、その電極にそ
のずれを示す電流が流れる。
The millimeter wave generator according to the present invention has an electrode implanted on the inner circumferential surface of the beam tunnel section via an insulator.
When the central axis of the electron beam deviates from the tube axis, a current flows through the electrode to indicate the deviation.

〔実施例〕〔Example〕

以下、この発明の一実施例を図について説明する。第1
図はこの発明の一実施例によるミリ波発生装置を示す断
面図、第2図はこの発明の一実施例によるミリ波発生装
置のビームトンネル部の拡大断面図であシ、図において
、従来のものと同一符号は同一 または相邑部分を示す
ので説明を省略する。14は電子ビーム2を高周波共振
回路10へ導くビームトンネル部、14mはビームトン
ネル部の内周面、15はカットオフ部9に近いビームト
ンネル部14の内周面14&に、絶縁体16によってビ
ームトンネル部14と絶縁された状態でかつ、先端部1
5aが突き出た状態で設けられた電極、16はビームト
ンネル部14と電極15を絶縁する絶縁体、17は磁場
を発生して電子ビーム2の中心軸を故意に動かす横磁場
発生コイル、18は電流計である。
An embodiment of the present invention will be described below with reference to the drawings. 1st
Figure 2 is a sectional view showing a millimeter wave generator according to an embodiment of the present invention, and Figure 2 is an enlarged sectional view of a beam tunnel section of the millimeter wave generator according to an embodiment of the invention. The same reference numeral indicates the same or similar part, so the explanation will be omitted. Reference numeral 14 denotes a beam tunnel section that guides the electron beam 2 to the high-frequency resonant circuit 10, 14m indicates an inner circumferential surface of the beam tunnel section, and 15 indicates an inner circumferential surface 14& of the beam tunnel section 14 near the cut-off section 9; Insulated from the tunnel part 14 and at the tip end 1
5a is an electrode provided in a protruding state; 16 is an insulator that insulates the beam tunnel section 14 and the electrode 15; 17 is a transverse magnetic field generating coil that generates a magnetic field to intentionally move the central axis of the electron beam 2; and 18 is a transverse magnetic field generating coil. It is an ammeter.

次に動作について説明する。電子銃1から射出された電
子ビーム2は、磁場強度が強くなるにつれてその径を次
第に小さくシ、ビームトンネル部14、カットオフ部8
を通過し、高周波共振回路10に導かれる。しかし、高
周波共振回路10の回路壁に近接した最適位置に電子ビ
ーム2を設定するとき、電子ビーム2がカットオフ部9
の壁面に衝突する可能性がある。そζで、この発明は、
第2図に示すように、カットオフ部9に近いビームトン
ネル部14の内周面14gに絶縁体16によってビーム
トンネル部14と絶縁された電極15を局方向に複数箇
所設置し、その電極間内径dをカットオフ部内径dcと
同程度かそれ以下に設定するもので、電子ビーム2の中
心軸と管軸がずれた場合には、電流計18に電流が流れ
、電子ビーム2のずれた方向を判定することができるも
のである。さらに、横磁場発生コイルITを励磁するこ
とによって、電子ビーム2の中心軸を故意に動かし、各
電流計18に電流が流れだすときの横磁場強度を測定し
、その横磁場強度よシ逆算して電子ビーム2の中心軸を
管軸にほぼ一致させることができる。また、横磁場発生
コイル11を用いない場合には、管軸自体を動かすこと
によっても同様なことができる。
Next, the operation will be explained. The electron beam 2 emitted from the electron gun 1 gradually reduces its diameter as the magnetic field strength increases, and passes through the beam tunnel section 14 and the cutoff section 8.
and is guided to the high frequency resonant circuit 10. However, when setting the electron beam 2 at an optimal position close to the circuit wall of the high frequency resonant circuit 10, the electron beam 2
may collide with the wall. Therefore, this invention is
As shown in FIG. 2, a plurality of electrodes 15 insulated from the beam tunnel section 14 by insulators 16 are installed in the central direction on the inner circumferential surface 14g of the beam tunnel section 14 near the cutoff section 9, and between the electrodes The inner diameter d is set to be the same as or smaller than the inner diameter dc of the cut-off part, and if the center axis of the electron beam 2 and the tube axis are misaligned, a current flows to the ammeter 18, and the electron beam 2 is misaligned. It is possible to determine the direction. Furthermore, by exciting the transverse magnetic field generating coil IT, the center axis of the electron beam 2 is intentionally moved, and the transverse magnetic field strength when the current begins to flow through each ammeter 18 is measured, and the transverse magnetic field strength is calculated backwards. This allows the central axis of the electron beam 2 to substantially coincide with the tube axis. Furthermore, when the transverse magnetic field generating coil 11 is not used, the same effect can be achieved by moving the tube axis itself.

なお、上記実施例では、電極15は棒状のものを用いて
説明したが、第3、第4図に示すようにその先端部に曲
率半径Rt−設けて電子ビームとの接触面積を調整して
も良い。また第5図に示したように、電極15を内周面
14aの局にわたって設けても良い。
In the above embodiment, the electrode 15 was explained using a rod-shaped electrode, but as shown in FIGS. 3 and 4, a radius of curvature Rt is provided at the tip of the electrode 15 to adjust the contact area with the electron beam. Also good. Furthermore, as shown in FIG. 5, the electrodes 15 may be provided over the inner circumferential surface 14a.

〔発明の効果〕〔Effect of the invention〕

以上のように、この発明によればビームトンネル部の内
周面に絶縁体を介して電極を植設するように構成したの
で、電子ビームの中心軸が管軸とずれたとき、その電極
にそのずれを示す電流が流れるため、その電流からその
ずれた方向を判定して電子ビームと回路壁とが衝突する
ことなく、最も発振効率の大きくなる位置に電子ビーム
の通過位置を設定することができる効果がある。
As described above, according to the present invention, since the electrode is implanted on the inner circumferential surface of the beam tunnel section through an insulator, when the center axis of the electron beam deviates from the tube axis, the electrode Since a current flows that indicates the deviation, it is possible to determine the direction of the deviation from the current and set the passing position of the electron beam at the position where the oscillation efficiency is maximized without the electron beam colliding with the circuit wall. There is an effect that can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の一実施例によるミリ波発生装置を示
す断面図、第2図はこの発明の一実施例によるミリ波発
生装置のビームトンネル部の拡大断面図、第3図、第4
図及び第5図はこの発明の他の実施例によるミリ波発生
装置のビームトンネル部の拡大断面図、第6図は従来の
ミリ波発生装置を示す断面図である。 1は電子銃、2は電子ビーム、3は高周波共振回路、1
2はミリ波、14はビームトンネル部、15は電極、1
6は絶縁体。 なお、図中、同一符号は同一 または相当部分を示す。 特許出願人  三菱電機株式会社
FIG. 1 is a sectional view showing a millimeter wave generator according to an embodiment of the present invention, FIG. 2 is an enlarged sectional view of a beam tunnel portion of the millimeter wave generator according to an embodiment of the invention, FIGS.
5 and 5 are enlarged cross-sectional views of a beam tunnel portion of a millimeter-wave generator according to another embodiment of the present invention, and FIG. 6 is a cross-sectional view showing a conventional millimeter-wave generator. 1 is an electron gun, 2 is an electron beam, 3 is a high frequency resonant circuit, 1
2 is a millimeter wave, 14 is a beam tunnel section, 15 is an electrode, 1
6 is an insulator. In addition, the same symbols in the figures indicate the same or equivalent parts. Patent applicant Mitsubishi Electric Corporation

Claims (1)

【特許請求の範囲】[Claims] 磁場に電子ビームを射出する電子銃と、上記電子銃に射
出された電子ビームをビームトンネル部を介して導入し
、その電子ビームに高周波を与えて共振を起こさせるこ
とによりミリ波を発生させる高周波共振回路とを備えた
ミリ波発生装置において、上記ビームトンネル部の内周
面に絶縁体を介して電極を植設したことを特徴とするミ
リ波発生装置。
An electron gun that emits an electron beam into a magnetic field, and a high frequency that generates millimeter waves by introducing the electron beam emitted by the electron gun through a beam tunnel section and giving a high frequency to the electron beam to cause resonance. 1. A millimeter wave generator comprising a resonant circuit, characterized in that an electrode is implanted on the inner peripheral surface of the beam tunnel portion via an insulator.
JP25898490A 1990-09-28 1990-09-28 Millimeter wave generating device Pending JPH04137439A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25898490A JPH04137439A (en) 1990-09-28 1990-09-28 Millimeter wave generating device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25898490A JPH04137439A (en) 1990-09-28 1990-09-28 Millimeter wave generating device

Publications (1)

Publication Number Publication Date
JPH04137439A true JPH04137439A (en) 1992-05-12

Family

ID=17327740

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25898490A Pending JPH04137439A (en) 1990-09-28 1990-09-28 Millimeter wave generating device

Country Status (1)

Country Link
JP (1) JPH04137439A (en)

Similar Documents

Publication Publication Date Title
US8258725B2 (en) Hollow beam electron gun for use in a klystron
EP1870923A2 (en) Magnetron
US8547006B1 (en) Electron gun for a multiple beam klystron with magnetic compression of the electron beams
US4395655A (en) High power gyrotron (OSC) or gyrotron type amplifier using light weight focusing for millimeter wave tubes
US6747412B2 (en) Traveling wave tube and method of manufacture
US3832596A (en) Magnetic structure for focusing of linear beams
US4621219A (en) Electron beam scrambler
US6313710B1 (en) Interaction structure with integral coupling and bunching section
Ding et al. Research progress on X-band multibeam klystron
JPH04137439A (en) Millimeter wave generating device
GB2251334A (en) High frequency amplifying apparatus.
US4445070A (en) Electron gun for producing spiral electron beams and gyrotron devices including same
US5164634A (en) Electron beam device generating microwave energy via a modulated virtual cathode
US4988956A (en) Auto-resonant peniotron having amplifying waveguide section
Bratman et al. Large orbit gyrotron at submillimeter waves
US3924152A (en) Electron beam amplifier tube with mismatched circuit sever
Fang et al. Development of a Ka-band 100-kW-Peak-Output-Power-Klystron with a 40% Beam-to-RF Conversion Efficiency
JPH11354299A (en) Cyclotron accelerator
JPH11354298A (en) High frequency type accelerating tube
JPS636725A (en) Gyrotron
Vancil Traveling wave tube and method of manufacture
Malykhin et al. High-power multibeam klystron with reversive magnetic focusing system
JPH02160400A (en) High frequency electron gun
JP2610311B2 (en) Multi-link high-frequency accelerating cavity
JPS6326919Y2 (en)